A radio frequency switch chip and a radio frequency switch module

By setting multiple RF switch groups and control ports on the RF switch chip, multiplexing of multiple types of RF switches is solved, and the complex problems of RF switch design and production process is reduced, cost and development cycle are improved, and flexibility is improved. efficiency.

CN118471937BActive Publication Date: 2024-12-06RUISI MICROSYSTEMS (YANTAI) CO LTD
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Patent Information

Application Number
CN202410800701.7
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2024-06-20
Publication Date
2024-12-06
Estimated Expiration
2044-06-20

AI Technical Summary

Technical Problem

The existing RF switch design and production process are complex, resulting in high costs and long development cycles, making it difficult to meet a variety of different application needs.

Method used

By setting multiple RF switch groups and control ports on the same substrate, multiplexing of multiple types of RF switches is achieved, allowing the RF switch chip to be physically cut or used as a whole according to needs, meeting the needs of different types of RF switches.

Benefits of technology

It greatly reduces the complexity of RF switch design and production process, saves costs, reduces development and stocking cycles, and improves the flexibility and efficiency of RF switches.

✦ Generated by Eureka AI based on patent content.

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Abstract

The present invention discloses a radio frequency switch chip and a radio frequency switch module, which relate to the field of radio frequency switches. The first area and the second area on the same substrate are two areas that can be physically separated. When the radio frequency switch of the required type can be realized by the first radio frequency switch group or the second radio frequency switch group alone, the entire radio frequency switch chip can be cut into two radio frequency switches for use. When the radio frequency switch of the required type needs to be realized by the first radio frequency switch group and the second radio frequency switch group at the same time, the entire radio frequency switch chip is directly used as a radio frequency switch. By reusing the first radio frequency switch group and / or the second radio frequency switch group on the same substrate, various types of radio frequency switches can be realized to meet various different needs, greatly reducing the complexity of the design and production process of the radio frequency switch and saving costs; the development cycle of the radio frequency switch can be effectively reduced, and the stocking cycle can be reduced.
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Description

Technical Field

[0001] The present invention relates to the field of radio frequency switches, and in particular to a radio frequency switch chip and a radio frequency switch module. Background Art

[0002] RF switch is an important electronic device, widely used in communication equipment, radar systems, electronic test equipment and other fields. The main function of RF switch is to realize the routing switching of RF signal. By changing the state of the switch, different RF signal paths can be connected to realize signal transmission and switching. The design and manufacture of RF switch is a complex process, involving multiple technologies, such as microelectronics integration technology, electronic device manufacturing technology, etc.

[0003] At the same time, due to different application scenarios, there are currently various requirements for the types of RF switches. For example, commonly used RF switches include SP2T RF switches, SP4T RF switches and other types. The internal structures of different types of RF switches are different. Before producing each RF switch, it is necessary to first determine the type of requirement, and then design and produce the RF switch based on the type of requirement. The diversity of RF switch types themselves will greatly increase the cost and complexity of the design and production process of the RF switch. Summary of the invention

[0004] The purpose of the present invention is to provide a radio frequency switch chip and a radio frequency switch module. By reusing a first radio frequency switch group and / or a second radio frequency switch group on the same substrate, various types of radio frequency switches can be realized to meet various different needs, greatly reducing the complexity of the design and production process of the radio frequency switch and saving costs; the development cycle of the radio frequency switch can be effectively shortened and the stocking cycle can be shortened.

[0005] In a first aspect, the present invention provides a radio frequency switch chip, comprising:

[0006] A substrate, the substrate comprising a first region and a second region, wherein the first region and the second region are two regions that can be physically separated;

[0007] A first radio frequency switch group includes N radio frequency switch units, where N is a positive integer greater than 1; the first radio frequency switch group is arranged in the first area;

[0008] A second radio frequency switch group includes M radio frequency switch units, where M is a positive integer greater than 1; the second radio frequency switch group is arranged in the second area;

[0009] N groups of first control ports are connected to the control ends of the N RF switch units in the first RF switch group in a one-to-one correspondence, and the first control ports are arranged in the first area;

[0010] The M groups of second control ports are connected to the control ends of the M RF switch units in the second RF switch group in a one-to-one correspondence, and the second control ports are arranged in the second area.

[0011] Optionally, when N=M, the first radio frequency switch group and the second radio frequency switch group are arranged symmetrically.

[0012] Optionally, it also includes:

[0013] M groups of first redundant ports are connected to the M RF switch units of the second RF switch group in a one-to-one correspondence, and the first redundant ports are arranged in the first area;

[0014] and / or,

[0015] The N groups of second redundant ports are connected to the N RF switch units of the first RF switch group in a one-to-one correspondence, and the second redundant ports are arranged in the second area.

[0016] Optionally, the RF switch unit in the first RF switch group and the RF switch unit in the second RF switch group have the same structure.

[0017] Optionally, the control end of the radio frequency switch unit includes a first control end and a second control end, and the radio frequency switch unit includes:

[0018] A first switch module, wherein the first end serves as the RF input end of the RF switch unit, the second end serves as the RF output end of the RF switch unit, and the control end serves as the first control end of the RF switch unit;

[0019] The second switch module has a first end connected to the first end of the first switch module, a second end connected to the ground, and a control end serving as a second control end of the radio frequency switch unit.

[0020] Optionally, the first switch module includes:

[0021] A first switch tube, a first end of which serves as a radio frequency input end of the radio frequency switch unit and is connected to a first end of the second switch module, and a second end of which serves as a radio frequency output end of the radio frequency switch unit;

[0022] A first resistor has a first end connected to the control end of the first switch tube, and a second end serving as a first control end of the radio frequency switch unit.

[0023] Optionally, the first switch module further includes:

[0024] A second switch tube, a first end of which serves as a radio frequency input end of the radio frequency switch unit and is connected to a first end of the second switch module, and a second end of which is connected to a first end of the first switch tube;

[0025] A second resistor has a first end connected to the control end of the second switch tube, and a second end connected to the second end of the first resistor.

[0026] In a second aspect, the present invention further provides a SP(N+M)T radio frequency switch module, comprising a control module and the radio frequency switch chip as described in the first aspect.

[0027] In a third aspect, the present invention also provides a radio frequency switch chip, comprising a substrate and a first radio frequency switch group arranged on the substrate, the first radio frequency switch group comprising N radio frequency switch units and N+M groups of control ports, N groups of control ports in the N+M groups of control ports are connected one by one to the control ends of the N radio frequency switch units in the first radio frequency switch group, and the M groups of control ports serve as redundant ports; N and M are both positive integers greater than 1.

[0028] In a fourth aspect, the present invention further provides a SPNT radio frequency switch module, comprising a control module and the radio frequency switch chip as described in the third aspect.

[0029] The present invention provides a radio frequency switch chip, including a first radio frequency switch group and a second radio frequency switch group, wherein the first radio frequency switch group and the second radio frequency switch group are respectively arranged in a first area and a second area on the same substrate, and a first control port and a second control port are also arranged in corresponding areas accordingly; and the first area and the second area are two areas that can be physically separated, when the radio frequency switch of the required type can be realized by the first radio frequency switch group or the second radio frequency switch group alone, the entire radio frequency switch chip can be cut into two radio frequency switches for use, and when the radio frequency switch of the required type needs to be realized by the first radio frequency switch group and the second radio frequency switch group at the same time, the entire radio frequency switch chip is directly used as a radio frequency switch. By reusing the first radio frequency switch group and / or the second radio frequency switch group on the same substrate, various types of radio frequency switches can be realized to meet various different needs, greatly reducing the complexity of the design and production process of the radio frequency switch and saving costs; the development cycle of the radio frequency switch can be effectively reduced, and the stocking cycle can be reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the prior art and the drawings required for use in the embodiments are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0031] Figure 1 A schematic diagram of the structure of a radio frequency switch chip provided by the present invention;

[0032] Figure 2A schematic structural diagram of a radio frequency switch unit provided by the present invention;

[0033] Figure 3 A structural schematic diagram of a control module provided by the present invention;

[0034] Figure 4 A schematic diagram of the structure of a symmetrically arranged radio frequency switch chip provided by the present invention;

[0035] Figure 5 A schematic diagram of the packaging structure of an SP4T radio frequency switch provided by the present invention;

[0036] Figure 6 A schematic diagram of the packaging structure of an SP2T radio frequency switch provided by the present invention;

[0037] Figure 7 A schematic diagram of the packaging structure of another SP2T radio frequency switch provided by the present invention;

[0038] Figure 8 A schematic diagram of the internal circuit structure of a radio frequency switch unit provided by the present invention. DETAILED DESCRIPTION

[0039] The core of the present invention is to provide a radio frequency switch chip and a radio frequency switch module. By reusing the first radio frequency switch group and / or the second radio frequency switch group on the same substrate, various types of radio frequency switches can be realized to meet various different needs, greatly reducing the complexity of the design and production process of the radio frequency switch and saving costs; it can effectively shorten the development cycle of the radio frequency switch and reduce the stocking cycle.

[0040] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0041] Please refer to Figure 1 , Figure 1 A schematic diagram of the structure of a radio frequency switch chip provided by the present invention; In a first aspect, the present invention provides a radio frequency switch chip, comprising:

[0042] A substrate 1, wherein the substrate 1 includes a first region and a second region, wherein the first region and the second region are two regions that can be physically separated;

[0043] The first RF switch group 11 includes N RF switch units, where N is a positive integer greater than 1; the first RF switch group 11 is arranged in the first area;

[0044] The second RF switch group 12 includes M RF switch units, where M is a positive integer greater than 1; the second RF switch group 12 is arranged in the second area;

[0045] N groups of first control ports 21 are connected to the control terminals of the N RF switch units in the first RF switch group 11 in a one-to-one correspondence, and the first control ports 21 are arranged in the first area;

[0046] The M groups of second control ports 22 are connected to the control terminals of the M RF switch units in the second RF switch group 12 in a one-to-one correspondence, and the second control ports 22 are arranged in the second area.

[0047] It is not difficult to understand that SPnT RF switches will have various requirements according to the differences in actual applications, such as SP2T, SP3T, SP4T, etc., but the structure of the switch circuit that switches the signal path is basically the same, with only the number of branches. For example, SP2T requires two branches, and SP3T requires three branches, and these branches are similar or identical in structure. Considering that the structures of each branch are basically similar, the present application proposes that a standard structure RF switch unit can be used to implement the RF switch chip. In order to realize multiple types of RF switches, the present application sets a first RF switch group 11 including N RF switch units and a second RF switch group 12 including M RF switch units on the same substrate 1, and the first RF switch group 11 is set in the first area, and the second RF switch group 12 is set in the second area. At the same time, considering that the operation of the RF switch group requires the drive and control of the control module, a first control port 21 corresponding to the first RF switch group 11 and a second control port 22 corresponding to the second RF switch group 12 are respectively set. The control module needs to control the corresponding RF switch unit through the control port. Therefore, the control port and the corresponding RF switch unit are connected by a line inside the chip, and when the first area and the second area need to be separated, the line between the control port and the corresponding RF switch unit must also be kept connected. Therefore, the first control port 21 needs to be set in the first area, and the second control port 22 needs to be set in the second area.

[0048] On this basis, when an SP(N+M)T type RF switch is required, the first RF switch group 11 and the second RF switch group 12 on the same substrate 1 are directly packaged, and the control module controls the first RF switch group 11 through the first control port 21, and controls the second RF switch group 12 through the second control port 22. The two are combined to realize N+M RF switch units, thereby realizing the SP(N+M)T RF switch; when an SPNT and / or SPMT type RF switch is required, the first area and the second area of ​​the entire RF switch chip need to be physically cut, and after cutting, they are used as two RF switch chips respectively, and the first RF switch group 11 in the first area is separately packaged. At this time, the control module controls the first RF switch group 11 separately through the first control port 21, and realizes the SPNT RF switch through the N RF switch units therein. The second RF switch group 12 in the second area is separately packaged, and the control module controls the second RF switch group 12 separately through the second control port 22, and realizes the SPMT RF switch through the M RF switch units therein.

[0049] It should be noted that the basic structure of each RF switch unit is the same, but the specific circuit implementation inside may be different. Please refer to Figure 2 , Figure 2 A schematic diagram of the structure of a radio frequency switch unit provided by the present invention; the radio frequency switch unit includes radio frequency input terminals 352 and 355, radio frequency output terminals 353 and 354, a series tube core 342, a parallel tube core 341 and a ground terminal 351, the control end of the series tube core 342 serves as the first control terminal AS of the radio frequency switch unit, the control end of the parallel tube core 341 serves as the second control terminal AP of the radio frequency switch unit, the first control terminal AS and the second control terminal AP are respectively connected to the control module through two control ports in a group of control ports, and the control module can control the radio frequency input terminal to be connected to the ground terminal or the radio frequency input terminal to be connected to the radio frequency output terminal through the first control terminal AS and the second control terminal AP, thereby realizing different output paths of the radio frequency signal. The present application does not make any special restrictions on the specific internal circuit structure of each radio frequency switch unit, and its basic structure satisfies Figure 2 The standard structure shown is sufficient, and the RF output end can be further connected to output structures such as an antenna when used.

[0050] It is understandable that for an RF switch unit, it needs to implement the switching process of different signal paths. Therefore, each RF switch unit requires a group of control ports. Usually, a group of control ports includes two control ports. The specific number and implementation method of a group of control ports can be adjusted and set according to actual needs; in order to facilitate the connection with the control module, the control port is usually arranged around the RF switch unit. The arrangement of the RF switch units in the first RF switch group 11 and the second RF switch group 12 is not specifically limited in this application. There are multiple implementation methods for the specific implementation method of the first area and the second area and the specific shape and size of the substrate 1. This application does not specifically limit it. This application does not specifically limit the specific type and implementation method of the control module, which can be implemented by various types of control devices. Please refer to Figure 3 , Figure 3 A schematic diagram of the structure of a control module provided by the present invention; the control module needs to be provided with a plurality of output ports for connecting with the control ports.

[0051] It is not difficult to understand that by dividing the same substrate 1 into the first area and the second area, and setting the corresponding RF switch group and control port, this structure can be directly reused in practical applications to realize multiple application scenarios. All structures on the same substrate 1 are packaged as a complete die (grain), so that it can be used as an SP(N+M)T RF switch; it is also possible to set a scribe groove between the first area and the second area on the substrate 1 in advance, cut the substrate 1 based on the scribe groove, and then package the two parts separately, so as to realize the two RF switches SPNT and SPMT respectively. Based on the same wafer, the design and production of three RF switch products can be packaged.

[0052] Specifically, the connection between the RF switch unit and the corresponding control port can be directly completed by the internal circuit connection of the chip during the design process. The connection between the control module and the control port can be achieved by external bonding during the packaging of the RF switch chip after the type requirement of the RF switch is determined. The specific method of circuit connection is not particularly limited in this application. The internal connection between the RF switch unit and the corresponding control port is usually directly interconnected by depositing a conductive layer, and the external bonding between the control module and the control port can be achieved by flying wires or bonding wires.

[0053] Furthermore, considering that the RF input and RF output in each RF switch unit need to be connected to an external circuit, a pad (metal block) needs to be designed on the die. The pad is connected to the internal circuit of the die, and the RF input and RF output of the RF switch unit are welded to the pad. The pad is used as a support to achieve connection with an external circuit or device. The pad can be designed in a centrally symmetrical manner to facilitate welding of different RF switch units. At the same time, considering that the RF switch chip proposed in this application can realize multiple types of RF switches, when designing the pad, it is best to set up some additional redundant pads, considering the maximum number of pads required by the RF switch chip in the process of realizing the RF switch, so that the RF switch chip can accurately realize different types of RF switches. This application does not make any special restrictions on the specific number, type, and implementation method of the pad.

[0054] Please refer to Figure 4 , Figure 4 A schematic diagram of the structure of a symmetrically arranged radio frequency switch chip provided by the present invention; it can be understood that on the same substrate, multiple radio frequency switch chips can be simultaneously generated and designed. In order to facilitate the production and implementation of the radio frequency switch, in addition to the scribe groove between the first area and the second area, it is also necessary to set scribe grooves around the radio frequency switch chip so that the radio frequency switch chip can be cut from the entire substrate to realize the entire SP(N+M)T radio frequency switch; Figure 4 As shown, the RF switch chip is marked with surrounding scribe lines 315 and a middle scribe line 316 .

[0055] The present invention provides a radio frequency switch chip, comprising a first radio frequency switch group 11 and a second radio frequency switch group 12, wherein the first radio frequency switch group 11 and the second radio frequency switch group 12 are respectively arranged in a first area and a second area on the same substrate 1, and a first control port 21 and a second control port 22 are also arranged in corresponding areas accordingly; and the first area and the second area are two areas that can be physically separated, when the radio frequency switch of the required type can be realized by the first radio frequency switch group 11 or the second radio frequency switch group 12 alone, the entire radio frequency switch chip can be cut into two radio frequency switches for use, and when the radio frequency switch of the required type needs to be realized by the first radio frequency switch group 11 and the second radio frequency switch group 12 at the same time, the entire radio frequency switch chip is directly used as a radio frequency switch. By reusing the first radio frequency switch group 11 and / or the second radio frequency switch group 12 on the same substrate 1, various types of radio frequency switches can be realized to meet various different needs, greatly reducing the complexity of the design and production process of the radio frequency switch, and saving costs; the development cycle of the radio frequency switch can be effectively reduced, and the stocking cycle can be reduced.

[0056] Based on the above examples: Figure 5 , Figure 5 This is a schematic diagram of the packaging structure of an SP4T RF switch provided by the present invention; please refer to Figure 6 , Figure 6 This is a schematic diagram of the packaging structure of a SP2T RF switch provided by the present invention; please refer to Figure 7 , Figure 7 A schematic diagram of the packaging structure of another SP2T radio frequency switch provided by the present invention;

[0057] As an optional embodiment, when N=M, the first RF switch group 11 and the second RF switch group 12 are symmetrically arranged.

[0058] It is not difficult to understand that in order to make full use of the entire wafer and substrate 1, the preferred implementation method during design and production is to set the first area and the second area as two completely symmetrical areas, and the number of RF switch units set in the first RF switch group 11 and the second RF switch group 12 is consistent, and they are symmetrically arranged on the substrate 1. Such an arrangement can closely implement the design and arrangement of multiple RF switch chips in an array arrangement on the same wafer, making full use of an entire wafer and improving the utilization rate of the wafer. When N=M, the RF switch chip can be used as a whole SP (2N) T RF switch, or it can be divided into two SPNT RF switches.

[0059] Specifically, the first area and the second area can be two completely symmetrical areas. At the same time, the symmetrical arrangement and array arrangement can be used on the same wafer to realize mass production of RF switch chips. The symmetrical arrangement can be used to regularize the design and production process of the entire wafer, which can also improve the utilization rate of the wafer to a certain extent and avoid waste in the wafer cutting process caused by disordered arrangement.

[0060] As an optional embodiment, it also includes:

[0061] M groups of first redundant ports are connected one-to-one with the M RF switch units of the second RF switch group 12, and the first redundant ports are arranged in the first area;

[0062] and / or,

[0063] The N groups of second redundant ports are connected to the N RF switch units of the first RF switch group 11 in a one-to-one correspondence, and the second redundant ports are arranged in the second area.

[0064] It is not difficult to understand that, considering that the RF switch chip is an SP(N+M)T RF switch in the entire package, the control module needs to control the first RF switch group 11 and the second RF switch group 12 simultaneously, and the control module will be set on one side of the RF switch chip during the packaging and application process. For the convenience of use, a first redundant port corresponding to the second RF switch group 12 can be further set in the first area, and / or a second redundant port corresponding to the first RF switch group 11 can be set in the second area. The first redundant port and each RF switch unit in the second RF switch group 12 are directly connected through the internal circuit of the chip, and the second redundant port and each RF switch unit in the first RF switch group 11 are directly connected through the internal circuit of the chip. When the entire RF switch chip is used as an SP(N+M)T RF switch, the middle scribe groove 316 and the interconnection lines between the redundant port and the corresponding RF switch unit will be retained, and the control module can directly control all RF switch units in the entire RF switch chip based on the first control port 21 and the first redundant port, or based on the second control port 22 and the second redundant port on the same side, to avoid excessive external wiring during the packaging process; when the scribe groove 316 in the middle of the RF switch chip is cut, the interconnection lines between the redundant port across the middle scribe groove and the corresponding RF switch unit will also be disconnected. The specific implementation method of the first redundant port and the second redundant port is not particularly limited in this application, and can be consistent with the corresponding control port.

[0065] Specifically, by adding redundant ports as redundant control ports, the control module can control all RF switch units in the RF switch chip at the same time, shortening the length of external wiring between the control module and the control ports corresponding to each RF switch unit during the packaging process, thereby improving the safety and reliability of the final RF switch.

[0066] As an optional embodiment, the RF switch unit in the first RF switch group 11 and the RF switch unit in the second RF switch group 12 have the same structure.

[0067] It is not difficult to understand that, considering that two RF switches will be generated after the RF switch chip is separated based on the middle scribe groove 316, in order to ensure the consistency of all generated RF switch chips, the better choice is to set the structure of all RF switch units in the RF switch chip to be exactly the same structure. The same structure at this time not only refers to the consistency of the basic structure, but also the specific circuit structure, including the implementation method and switching method of each signal path, etc., need to be consistent, that is, the RF switch unit in the first RF switch group 11 and the RF switch unit in the second RF switch group 12 are exactly the same, and are both implemented by the same RF switch unit.

[0068] Specifically, considering that the RF switch chip may eventually be used as two independent chips, in order to ensure the consistency of all RF switch chips obtained during the entire design and production process, the RF switch units in the first RF switch group 11 and the RF switch units in the second RF switch group 12 need to be exactly the same to ensure product consistency.

[0069] Please refer to Figure 8 , Figure 8 The schematic diagram of the internal circuit structure of a radio frequency switch unit provided by the present invention. As an optional embodiment, the control end of the radio frequency switch unit includes a first control end AS and a second control end AP, and the radio frequency switch unit includes:

[0070] A first switch module, wherein the first end serves as a radio frequency input end of the radio frequency switch unit, the second end serves as a radio frequency output end of the radio frequency switch unit, and the control end serves as a first control end AS of the radio frequency switch unit;

[0071] The second switch module has a first end connected to the first end of the first switch module, a second end connected to the ground, and a control end serving as a second control end AP of the radio frequency switch unit.

[0072] It is not difficult to understand that the switch module can be used inside the RF switch unit to switch the signal path. The first switch module is connected in series between the RF input terminal and the RF output terminal, and a grounded second switch module is connected in parallel, that is, the first switch module is used as a series die, and the second switch module is used as a parallel die. The control module controls the RF switch unit by controlling the on and off of the series die and the parallel die, thereby realizing the switching process of the signal path. The specific type and implementation method of the first switch module and the second switch module are not particularly limited in this application.

[0073] Specifically, the switching process of the signal path of the RF switch unit can be effectively realized through the controllable switch module. The internal structure of the entire RF switch unit is simple and easy to implement, which is conducive to the simple implementation and integrated packaging of the entire RF switch module.

[0074] As an optional embodiment, the first switch module includes:

[0075] The first switch tube T1 has a first end serving as a radio frequency input end of the radio frequency switch unit and connected to a first end of the second switch module, and a second end serving as a radio frequency output end of the radio frequency switch unit;

[0076] The first resistor R1 has a first end connected to the control end of the first switch tube T1 , and a second end serving as a first control end AS of the radio frequency switch unit.

[0077] It is not difficult to understand that the conduction or shutdown of the first switch module can be effectively achieved through the controllable first switch tube T1. At the same time, in order to ensure the accurate operation of the first switch tube T1, a first resistor R1 can also be set at the control end of the first switch tube T1. The first resistor R1 can play the role of circuit matching or bias circuit to avoid misconduction of the first switch tube T1. The specific type and implementation method of the first switch tube T1 and the first resistor R1 are not specifically limited in this application. The first switch tube T1 can be implemented by switching devices such as MOS tube (Metal-Oxide-Semiconductor Field-Effect Transistor). The control end of the first switch tube T1 can be a gate, a drain or a source, which can be changed according to actual needs. The specific implementation method of the second switch module is similar to that of the first switch module, and this application will not repeat it here. Figure 8 As shown, the second switch module can be implemented by a third switch tube T3 and a third resistor R3.

[0078] Specifically, the switch module can be effectively realized by adopting a controllable switch tube and a mesa resistor connected to the control end. The control end of the controllable switch tube is connected to the control module through the mesa resistor to realize an accurate and reliable action process, thereby ensuring the accuracy and reliability of the working process of the RF switch.

[0079] As an optional embodiment, the first switch module further includes:

[0080] The second switch tube T2 has a first end serving as the RF input end of the RF switch unit and connected to the first end of the second switch module, and a second end connected to the first end of the first switch tube T1;

[0081] The second resistor R2 has a first end connected to the control end of the second switch tube T2 , and a second end connected to the second end of the first resistor R1 .

[0082] Furthermore, in order to ensure the accuracy of the signal switching process of the RF switch unit, a second switch tube T2 and a second resistor R2 may be further provided on the basis of the first switch tube T1 and the first resistor R1. The second switch tube T2 and the second resistor R2 are designed as redundant and are consistent with the working process of the first switch tube T1. The second switch tube T2 is connected to the control module through the second resistor R2 to ensure the accuracy and reliability of the control process of the first switch module connecting the RF input terminal and the RF output terminal, and to avoid misconduction of a single switch tube leading to malfunction of the RF switch unit. The specific type and implementation method of the second switch tube T2 and the second resistor R2 are not particularly limited in this application, and can be consistent with the setting method of the first switch tube T1 and the first resistor R1. The specific implementation method of the second switch module is similar to that of the first switch module, and this application will not repeat it here. Figure 8 As shown, the second switch module can be further configured by a fourth switch tube T4 and a fourth resistor R4.

[0083] Specifically, by adding a redundant design of the controllable switch in the first switch module, the accuracy and reliability of the control process of the control module over the RF switch unit can be further ensured, thereby avoiding malfunction of the RF switch unit and ensuring the quality and reliability of the final RF switch.

[0084] As a specific embodiment, the first RF switch group 11 and the second RF switch group 12 are symmetrically arranged, and the first control port 21 and the second control port 22 are also symmetrically arranged. The first RF switch group 11 includes an RF switch unit A and an RF switch unit B. The first control port 21 corresponding to the RF switch unit A is port 323 and port 324, and the first control port 21 corresponding to the RF switch unit B is port 325 and port 326. The second RF switch group 12 includes an RF switch unit C and an RF switch unit D. The second control port 22 corresponding to the RF switch unit D is port 383 and port 384. Port 384, the second control port 22 corresponding to the RF switch unit C is port 385 and port 386, and at the same time, the first redundant port corresponding to the RF switch unit D, i.e., port 321 and port 322, the second redundant port corresponding to the RF switch unit C, i.e., port 327 and port 328, are added at the location of the first control port 21, and the second redundant port corresponding to the RF switch unit A, i.e., port 381 and port 382, ​​and the second redundant port corresponding to the RF switch unit B, i.e., port 387 and port 388, are added at the location of the second control port 22. The entire substrate 1 is divided into two symmetrical parts by the middle scribe groove 316.

[0085] In the design process of the RF switch chip, the control port and the redundant port are connected to the line of the internal circuit between each RF switch unit in advance. Port 321 is internally connected to the control end of the parallel tube core of the RF switch unit D, port 322 is internally connected to the control end of the serial tube core of the RF switch unit D, port 323 is internally connected to the control end of the parallel tube core of the RF switch unit A, port 324 is internally connected to the control end of the serial tube core of the RF switch unit A, port 325 is internally connected to the control end of the serial tube core of the RF switch unit B, port 326 is internally connected to the control end of the parallel tube core of the RF switch unit B, and port 327 is internally connected to the control end of the serial tube core of the RF switch unit C. Port 328 is internally connected to the control end of the parallel tube core of RF switch unit C, port 381 is internally connected to the control end of the parallel tube core of RF switch unit A, port 382 is internally connected to the control end of the serial tube core of RF switch unit A, port 383 is internally connected to the control end of the parallel tube core of RF switch unit D, port 384 is internally connected to the control end of the serial tube core of RF switch unit D, port 385 is internally connected to the control end of the serial tube core of RF switch unit C, port 386 is internally connected to the control end of the parallel tube core of RF switch unit C, port 387 is internally connected to the control end of the serial tube core of RF switch unit B, and port 388 is internally connected to the control end of the parallel tube core of RF switch unit B. At the same time, during the packaging process, different external wiring connections are made according to the different types of RF switches required. The output port of the control module is as follows: Figure 3 As shown, when SP2T is required and RF switch unit A and RF switch unit B are used, control port 323 is connected to output port 373, control port 324 is connected to output port 374, control port 325 is connected to output port 375, and control port 326 is connected to output port 376; when SP2T is required and RF switch unit C and RF switch unit D are used, control port 386 is connected to output port 373, control port 385 is connected to output port 374, control port 384 is connected to output port 375, and control port 383 is connected to output port 376; when SP4T is required, control port 321 is connected to output port 371, control port 322 is connected to output port 372, control port 323 is connected to output port 373, control port 324 is connected to output port 374, control port 325 is connected to output port 375, control port 326 is connected to output port 376, control port 327 is connected to output port 377, and control port 328 is connected to output port 378. The ground terminal 351 in the RF switch unit is connected to the ground through a ground lead 451 , and the RF input terminal and the RF output terminal of each RF switch unit are connected to the pad through a bonding wire 450 .

[0086] When the middle scribe line 316 is not cut, the entire RF switch chip is used as an SP4T RF switch. Figure 5 As shown, the interconnecting metal wires between the redundant ports and the RF switch units pass through the middle scribe groove 316. When the SP4T switch is formed by slicing according to the scribe groove 315 around the RF switch chip, the RF input ends of the four RF switch units are respectively connected to different pads, and the RF output ends can be connected to the same pad. The entire RF switch chip can share one pad to output the RF signal, or it can be connected to different pads respectively, but the pad connected to the RF output end cannot overlap with the pad connected to the RF input end; when the middle scribe groove 316 is cut, the entire RF switch chip is used as two SP2T RF switches, and due to the symmetrical design of the first RF switch group 11 and the second RF switch group 12, one of the RF switches after cutting needs to be rotated during packaging, and one side of the control port is rotated to the side where the control module is located, so as to facilitate subsequent connection.

[0087] When the dicing is performed according to the surrounding dicing lines 315 and the middle dicing lines 316 to form the SP2T switch, the following is generated: Figure 6 Shown and Figure 7 In the two SP2T switches shown, the RF inputs of RF switch unit A and RF switch unit B are connected to different pads respectively, and the RF outputs can be connected to the same pad or different pads but do not overlap with the pads connected to the RF inputs; the RF inputs of RF switch unit C and RF switch unit D are also connected to different pads respectively, and the RF outputs can be connected to the same pad or different pads but do not overlap with the pads connected to the RF inputs. Figure 7 As shown, during packaging, the die where the RF switch unit C and the RF switch unit D are located needs to be rotated 180 degrees, and the control port is set corresponding to the output port of the control module, so as to achieve the same function as the die composed of the RF switch unit A and the RF switch unit B, and the wiring and packaging process can be completely equivalent to the packaging process of the RF switch composed of the RF switch unit A and the RF switch unit B. Therefore, by cutting the SP4T switch through the scribe groove, two SP2T switches can be realized.

[0088] In a second aspect, the present invention further provides a SP(N+M)T radio frequency switch module, comprising a control module and the radio frequency switch chip as described in the first aspect.

[0089] In a third aspect, the present invention also provides a radio frequency switch chip, comprising a substrate 1 and a first radio frequency switch group 11 arranged on the substrate 1, the first radio frequency switch group 11 comprising N radio frequency switch units and N+M groups of control ports, the N groups of control ports in the N+M groups of control ports are connected one by one to the control ends of the N radio frequency switch units in the first radio frequency switch group 11, and the M groups of control ports serve as redundant ports; N and M are both positive integers greater than 1.

[0090] In a fourth aspect, the present invention further provides a SPNT radio frequency switch module, comprising a control module and the radio frequency switch chip as described in the third aspect.

[0091] It is not difficult to understand that, through the die design of dividing the area, an entire RF control chip can be divided into two parts through the scribe groove. When the middle scribe groove 316 is not cut, the RF control chip is used as the entire switch chip. When the middle scribe groove 316 is cut and the interconnection line is also cut, the RF control chip is used as two sub-switch chips; the packaging of various types of RF switches can be realized by reusing the same control module and substrate. At the same time, in the process of generating and designing the RF switch, multiple identical wafers can be manufactured on the same substrate according to the same process during the wafer preparation process, and scribe grooves are set around and in the middle of the wafer corresponding to each RF switch chip. During the cutting process, the structure of the RF switch chip provided by the first aspect or the third aspect is cut according to different needs, and then packaged into different switch modules, thereby realizing the SP(N+M)T RF switch module or SPNT RF switch module.

[0092] The entire RF switch chip uses the same die to meet a variety of different RF switch requirements. The various types of RF switches implemented can reuse the same set of masks and the same wafer, reducing mask investment, development cycle, and stocking cycle. The present invention realizes the reuse of RF switch units through the design of symmetrical layout and redundant ports, thereby reducing the manufacturing cost of the entire RF switch. In particular, when designing different types of switches, part of the design resources can be shared, greatly reducing the design cost. Whether it is a complete die or an RF switch formed after segmentation, it can adapt to different application requirements by adjusting the position and shape of the scribe groove, thereby simplifying the design process and reducing the design complexity. The redundant port is interconnected with the corresponding RF switch unit through the metal or mesa resistor across the scribe groove. This design can ensure that the switch can maintain good performance under any circumstances and is not affected by the position and shape of the scribe groove.

[0093] It should also be noted that, in this specification, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "comprise", "include" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the statement "comprises a ..." does not exclude the presence of other identical elements in the process, method, article or device including the element.

[0094] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present invention. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but rather to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A radio frequency switch chip, characterized in that: include: A substrate (1), the substrate comprising a first region and a second region, the first region and the second region being two regions that can be physically separated; A first radio frequency switch group (11) comprises N radio frequency switch units (2), where N is a positive integer greater than 1; the first radio frequency switch group (11) is arranged in the first area; A second radio frequency switch group (12) comprises M radio frequency switch units (2), where M is a positive integer greater than 1; the second radio frequency switch group (12) is arranged in the second area; N groups of first control ports (21), connected one-to-one with the control ends of the N radio frequency switch units (2) in the first radio frequency switch group (11), the first control ports (21) being arranged in the first area; M groups of second control ports (22), connected one-to-one with the control ends of the M radio frequency switch units (2) in the second radio frequency switch group (12), the second control ports (22) being arranged in the second area; Also includes: M groups of first redundant ports, connected one-to-one with the M radio frequency switch units (2) of the second radio frequency switch group (12), the first redundant ports being arranged in the first area; and / or, N groups of second redundant ports are connected in a one-to-one correspondence with the N radio frequency switch units (2) of the first radio frequency switch group (11), and the second redundant ports are arranged in the second area.

2. The radio frequency switch chip according to claim 1, characterized in that: When N=M, the first radio frequency switch group and the second radio frequency switch group are symmetrically arranged.

3. The radio frequency switch chip according to claim 1, characterized in that: The radio frequency switch unit (2) in the first radio frequency switch group (11) and the radio frequency switch unit (2) in the second radio frequency switch group (12) have the same structure.

4. The radio frequency switch chip according to any one of claims 1 to 3, characterized in that: The control end of the radio frequency switch unit (2) comprises a first control end and a second control end, and the radio frequency switch unit (2) comprises: A first switch module, wherein the first end serves as a radio frequency input end of the radio frequency switch unit (2), the second end serves as a radio frequency output end of the radio frequency switch unit (2), and the control end serves as a first control end of the radio frequency switch unit (2); A second switch module, having a first end connected to the first end of the first switch module, a second end connected to the ground, and a control end serving as a second control end of the radio frequency switch unit (2).

5. The radio frequency switch chip according to claim 4, characterized in that: The first switch module comprises: A first switch tube (T1), a first end of which serves as a radio frequency input end of the radio frequency switch unit (2) and is connected to a first end of the second switch module, and a second end of which serves as a radio frequency output end of the radio frequency switch unit (2); A first resistor (R1), a first end of which is connected to the control end of the first switch tube (T1), and a second end of which serves as a first control end of the radio frequency switch unit (2).

6. The radio frequency switch chip according to claim 5, characterized in that: The first switch module further includes: A second switch tube (T2), a first end of which serves as a radio frequency input end of the radio frequency switch unit (2) and is connected to a first end of the second switch module, and a second end of which is connected to a first end of the first switch tube (T1); A second resistor (R2) has a first end connected to the control end of the second switch tube (T2), and a second end connected to the second end of the first resistor (R1).

7. A SP(N+M)T radio frequency switch module, characterized in that: It comprises a control module and the radio frequency switch chip as claimed in claim 1.

8. A radio frequency switch chip, characterized in that: The invention comprises a substrate (1) and a first radio frequency switch group (11) arranged on the substrate (1), wherein the first radio frequency switch group (11) comprises N radio frequency switch units (2) and N+M groups of control ports, wherein N groups of control ports in the N+M groups of control ports are connected one-to-one with the control ends of the N radio frequency switch units (2) in the first radio frequency switch group (11), and the M groups of control ports serve as redundant ports; and N and M are both positive integers greater than 1.

9. A SPNT radio frequency switch module, characterized in that: It comprises a control module and the radio frequency switch chip as claimed in claim 8.

Citation Information

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