A method for detecting discharge performance of semiconductor discharge tube

Abstract

The present invention relates to the field of semiconductor discharge tube detection, and in particular to a method for detecting the discharge performance of a semiconductor discharge tube, comprising: obtaining a semiconductor discharge tube to be detected, and obtaining relevant data of a target use environment of the semiconductor discharge tube to be detected; determining an electromagnetic distribution state according to an electromagnetic influence deviation value and an electromagnetic influence quantity; determining a quantity confirmation method according to the electromagnetic distribution state and whether to determine the position of a simulated electromagnetic device and an electromagnetic wave intensity according to each scene electromagnetic device in each associated combination; determining a temperature setting method according to a maximum temperature value and a duration of the maximum temperature; determining to adjust the thickness of a glass passivation layer or to optimize the detection according to a reference temperature value; determining to adjust the number of P-type base region divisions according to a maximum surge current or to optimize the detection according to a response time. The present invention can improve the detection accuracy of semiconductor discharge tubes.

Description

Technical Field

[0001] The invention relates to the field of semiconductor discharge tube detection, and in particular to a method for detecting the discharge performance of a semiconductor discharge tube. Background Art

[0002] Semiconductor discharge tubes are widely used. In the field of automobile safety, semiconductor discharge tubes in airbag control units can prevent accidental detonation or functional failure due to voltage fluctuations or surges. Electronic control units in ABS systems require stable and reliable power supply, and semiconductor discharge tubes can protect these control units from voltage spikes. Therefore, it is very important to test the discharge performance of semiconductor discharge tubes to ensure that the performance of semiconductor discharge tubes can meet the safety requirements of actual use. However, in existing tests, the characteristics of the use environment of semiconductor discharge tubes are not taken into account, resulting in conventional detection methods being difficult to meet the needs of actual use. Therefore, how to improve the detection accuracy of semiconductor discharge tubes is a technical problem that needs to be urgently solved by technical personnel in this field.

[0003] Chinese patent publication number CN101957424B discloses a method for detecting the electrostatic discharge performance of semiconductor devices, including: collecting the failure voltage of all test pins of semiconductor devices in electrostatic discharge test; performing probability distribution statistics on the obtained failure voltage data; obtaining the extrapolated minimum voltage based on the probability distribution of the obtained failure voltage data; if the difference between the extrapolated minimum voltage and the minimum value in the obtained failure voltage data is less than the critical range, then comparing the minimum value with the electrostatic discharge reference value to obtain the detection result; if the difference between the extrapolated minimum voltage and the minimum value in the obtained failure voltage data is greater than or equal to the critical range, then re-performing the electrostatic discharge test, or, performing cause analysis and process and / or electrostatic protection design improvements. It can be seen that the above technical solution has the following problems: the use environment of the semiconductor discharge tube is not simulated, resulting in the detection performance of the semiconductor discharge tube and the actual use performance may have a detection deviation. Summary of the invention

[0004] To this end, the present invention provides a method for detecting the discharge performance of a semiconductor discharge tube, so as to overcome the problem in the prior art that the use environment of the semiconductor discharge tube is not simulated, resulting in a detection deviation between the detection performance of the semiconductor discharge tube and the actual use performance.

[0005] To achieve the above object, the present invention provides a method for detecting the discharge performance of a semiconductor discharge tube, comprising:

[0006] Acquire the semiconductor discharge tube to be tested, and acquire relevant data of the target use environment of the semiconductor discharge tube to be tested;

[0007] Determine the electromagnetic distribution state according to the electromagnetic influence deviation value and the electromagnetic influence quantity in the target use environment;

[0008] Determine the quantity confirmation method according to the electromagnetic distribution state of the target use environment and whether to determine the location and electromagnetic wave intensity of the simulated electromagnetic device according to each scene electromagnetic device in each associated combination;

[0009] The quantity confirmation method is to determine the number of simulated electromagnetic devices according to the electromagnetic interference direction, or to set the number of simulated electromagnetic devices to a standard number;

[0010] Determine the temperature setting method according to the highest temperature value of the target use environment and the duration of the highest temperature during historical use;

[0011] Determine to adjust the thickness of the glass passivation layer according to the reference temperature value of the semiconductor discharge tube to be tested, or perform optimized testing according to the maximum temperature value;

[0012] The maximum surge current of the semiconductor discharge tube to be detected is detected, and the number of P-type base region divisions for the semiconductor discharge tube to be detected is adjusted according to the maximum surge current, or the response time is optimized for detection.

[0013] Furthermore, if the electromagnetic distribution state is that the electromagnetic influence deviation value is greater than or equal to the preset electromagnetic influence deviation value or the electromagnetic influence quantity is greater than or equal to the preset electromagnetic influence quantity, the number of simulated electromagnetic devices is determined according to the electromagnetic interference direction, and the number of simulated electromagnetic devices is equal to the sum of the number of associated combinations and the number of specific directions.

[0014] Furthermore, the associated combination is confirmed by performing interference analysis on each electromagnetic interference direction, wherein when performing interference analysis on a single electromagnetic interference direction, the electromagnetic interference direction is recorded as a target electromagnetic interference direction, and a direction deviation value between each electromagnetic interference direction and the target electromagnetic interference direction is detected, and an electromagnetic interference direction whose direction deviation value is less than a preset direction deviation value is recorded as an associated electromagnetic interference direction, and the target electromagnetic interference direction and the associated electromagnetic interference direction are recorded as an associated combination;

[0015] If there is an associated combination corresponding to the target electromagnetic interference direction or there is no associated electromagnetic interference direction with a directional deviation value less than a preset directional deviation value, then the interference analysis of the target electromagnetic interference direction is determined to be completed, and interference analysis is continued for other electromagnetic interference directions that are not recorded as associated combinations until the interference analysis of each electromagnetic interference direction is completed.

[0016] Furthermore, the specific direction is confirmed in such a way that the electromagnetic interference direction without an associated electromagnetic interference direction having a direction deviation value less than a preset direction deviation value is recorded as the specific direction.

[0017] Furthermore, a reference coordinate system is established, the origin of which is the position of the semiconductor discharge tube to be detected.

[0018] If there is an associated combination, the position coordinates of each simulated electromagnetic device include x-coordinate, y-coordinate and z-coordinate.

[0019] For a single simulated electromagnetic device, its x coordinate is determined according to the average value of the reference x coordinates of each scene electromagnetic device in the corresponding associated combination, its y coordinate is determined according to the average value of the reference y coordinates of each scene electromagnetic device in the corresponding associated combination, and its z coordinate is determined according to the average value of the reference z coordinates of each scene electromagnetic device in the corresponding associated combination;

[0020] The electromagnetic wave intensity of the simulated electromagnetic device is determined according to the average value of the electromagnetic wave intensity of the electromagnetic devices of each scene in the corresponding associated combination;

[0021] If there is no associated combination, the position coordinates of each simulated electromagnetic device include x-coordinate, y-coordinate and z-coordinate.

[0022] For a single simulated electromagnetic device, its x coordinate is determined according to the average value of the reference x coordinates of the electromagnetic devices of each scene, its y coordinate is determined according to the average value of the reference y coordinates of the electromagnetic devices of each scene, and its z coordinate is determined according to the average value of the reference z coordinates of the electromagnetic devices of each scene;

[0023] The electromagnetic wave intensity of the simulated electromagnetic device is determined according to the average value of the electromagnetic wave intensity of the electromagnetic devices in each scene.

[0024] Furthermore, if the maximum temperature value is greater than the preset maximum temperature value or the maximum temperature duration is greater than the preset maximum temperature duration, the temperature setting method is to increase the detection temperature from the preset initial temperature to the maximum temperature value at a standard heating rate, and keep the temperature when the detection temperature reaches the maximum temperature value, and the heat preservation time is the same as the maximum temperature duration;

[0025] If the maximum temperature value is less than or equal to the preset maximum temperature value and the maximum temperature duration is less than or equal to the preset maximum temperature duration, the temperature setting method is to set the temperature to the maximum temperature value, and the insulation time is the same as the maximum temperature duration.

[0026] Further, if the reference temperature value is greater than or equal to the preset reference temperature value, the thickness of the glass passivation layer is reduced and adjusted;

[0027] The reduction value of the thickness of the glass passivation layer is negatively correlated with the reference temperature value.

[0028] Further, if the reference temperature value is less than the preset reference temperature value, an optimized detection is performed for the highest temperature value;

[0029] Detecting the temperature difference of the semiconductor discharge tube to be detected, and when the temperature difference is greater than a preset temperature difference, reducing the difference of the glass passivation layer of the semiconductor discharge tube to be detected;

[0030] The relationship between the reduction value of the glass passivation layer difference of the semiconductor discharge tube to be detected and the temperature difference is positively correlated.

[0031] Furthermore, if the maximum surge current is less than the preset maximum surge current, the number of P-type base region divisions of the semiconductor discharge tube to be detected is increased and adjusted;

[0032] The relationship between the increase in the number of divisions of the P-type base region of the semiconductor discharge tube to be detected and the maximum surge current is positively correlated.

[0033] Further, if the maximum surge current is greater than or equal to the preset maximum surge current, an optimized detection is performed on the response time;

[0034] Detecting the response time of the semiconductor discharge tube to be detected, and when the response time is greater than a preset response time, reducing the lead inductance;

[0035] The reduction value of the lead inductance is negatively correlated with the response time.

[0036] Compared with the prior art, the beneficial effect of the present invention lies in that, in the technical solution of the present invention, the electromagnetic distribution state is determined according to the electromagnetic influence deviation value and the electromagnetic influence quantity in the target use environment, and the electromagnetic influence deviation value and the electromagnetic influence quantity in the target use environment effectively reflect the distribution of scene electromagnetic devices that affect the discharge performance of the semiconductor discharge tube to be detected in the target use environment, and then the number of simulated electromagnetic devices is determined according to the electromagnetic distribution state, thereby reducing the investment in unnecessary simulated electromagnetic devices in the process of simulating the use environment, ensuring the similarity between the simulated use environment and the target use environment, improving the accuracy of the discharge performance test of the semiconductor discharge tube to be detected, and then reducing the detection deviation of the semiconductor discharge tube to be detected in the target use environment.

[0037] Furthermore, the present invention determines the temperature setting method according to the maximum temperature value of the target use environment during historical use and the duration of the maximum temperature. The maximum temperature information of the target use environment is reflected by the maximum temperature value of the target use environment during historical use and the duration of the maximum temperature, and then different temperature setting methods are adaptively determined, so that the selection of the temperature setting method is more in line with the actual working scenario, avoiding the problem that the temperature change process cannot be effectively simulated when the temperature is high, resulting in deviations in the detection results, thereby improving the accuracy of the discharge performance test of the semiconductor discharge tube to be detected.

[0038] Furthermore, in the present invention, the reference temperature value of the semiconductor discharge tube to be detected effectively reflects the heat dissipation performance of the semiconductor discharge tube to be detected, and then determines the process adjustment method according to the reference temperature value to adjust the thickness of the glass passivation layer or optimize the detection for the maximum temperature value, so that the selection of the process adjustment method is more in line with the use working scenario, avoiding the problem of easy aging of the semiconductor discharge tube to be detected due to the excessively high temperature of the semiconductor discharge tube to be detected, thereby improving the discharge performance of the semiconductor discharge tube to be detected.

[0039] Furthermore, in the present invention, the temperature difference of the semiconductor discharge tube to be detected effectively reflects the heat dissipation difference of the semiconductor discharge tube to be detected, and then when the temperature difference is greater than the preset temperature difference, the difference of the glass passivation layer of the semiconductor discharge tube to be detected is reduced and adjusted, thereby avoiding the problem of reduced performance stability of the semiconductor discharge tube to be detected due to excessive local temperature of the semiconductor discharge tube to be detected, thereby improving the reliability of the semiconductor discharge tube to be detected in the target use environment.

[0040] Furthermore, in the present invention, the maximum surge current of the semiconductor discharge tube to be detected effectively reflects the protective effect of the semiconductor discharge tube to be detected on the circuit, and then the optimization method is determined according to the maximum surge current, so that the selection of the optimization method is more in line with the actual working scenario, avoiding the problem that the maximum surge current is too small to effectively protect the circuit, thereby improving the reliability of the use of the semiconductor discharge tube to be detected.

[0041] Furthermore, the response time of the semiconductor discharge tube to be detected in the present invention reflects the timeliness of the protection effect of the semiconductor discharge tube to be detected. By reducing the lead inductance when the response time is greater than the preset response time, the inability to effectively absorb surge current due to too long response time is avoided, thereby improving the reliability of the use of the semiconductor discharge tube to be detected. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] Figure 1 A schematic diagram of a method for detecting discharge performance of a semiconductor discharge tube according to the present invention;

[0043] Figure 2 This is a flow chart of the present invention for determining a quantity confirmation method according to an electromagnetic distribution state;

[0044] Figure 3 A flow chart of the present invention for determining, according to a reference temperature value, to adjust the thickness of the glass passivation layer or to optimize the detection for the maximum temperature value;

[0045] Figure 4 The present invention is a flow chart for adjusting the number of P-type base region divisions for a semiconductor discharge tube to be detected or optimizing detection for response time according to the maximum surge current. DETAILED DESCRIPTION

[0046] In order to make the objects and advantages of the present invention more clearly understood, the present invention is further described below in conjunction with embodiments; it should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0047] The preferred embodiments of the present invention are described below with reference to the accompanying drawings. It should be understood by those skilled in the art that these embodiments are only used to explain the technical principles of the present invention and are not intended to limit the protection scope of the present invention.

[0048] It should be noted that, in the description of the present invention, terms such as "up", "down", "left", "right", "inside" and "outside" indicating directions or positional relationships are based on the directions or positional relationships shown in the drawings. This is merely for the convenience of description and does not indicate or imply that the device or element must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it cannot be understood as a limitation on the present invention.

[0049] In addition, it should be noted that in the description of the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For those skilled in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0050] See also Figures 1 to 4 As shown, the present invention provides a method for detecting the discharge performance of a semiconductor discharge tube, comprising:

[0051] Acquire the semiconductor discharge tube to be tested, and acquire relevant data of the target use environment of the semiconductor discharge tube to be tested;

[0052] Determine the electromagnetic distribution state according to the electromagnetic influence deviation value and the electromagnetic influence quantity in the target use environment;

[0053] Determine the quantity confirmation method according to the electromagnetic distribution state of the target use environment and whether to determine the location and electromagnetic wave intensity of the simulated electromagnetic device according to each scene electromagnetic device in each associated combination;

[0054] The quantity confirmation method is to determine the number of simulated electromagnetic devices according to the electromagnetic interference direction, or to set the number of simulated electromagnetic devices to a standard number;

[0055] Determine the temperature setting method according to the highest temperature value of the target use environment and the duration of the highest temperature during historical use;

[0056] Determine to adjust the thickness of the glass passivation layer according to the reference temperature value of the semiconductor discharge tube to be tested, or perform optimized testing according to the maximum temperature value;

[0057] The maximum surge current of the semiconductor discharge tube to be detected is detected, and the number of P-type base region divisions for the semiconductor discharge tube to be detected is adjusted according to the maximum surge current, or the response time is optimized for detection.

[0058] The application scenario of the present invention is to simulate the vehicle safety system environment to detect the discharge performance of the semiconductor discharge tube to be detected. The relevant data of the target use environment include temperature, the position of the scene electromagnetic device and the electromagnetic wave intensity of the scene electromagnetic device. The structure of the semiconductor discharge tube to be detected is a distributed multi-cell integrated semiconductor discharge tube structure to be detected, including: a metal electrode, a cathode emission region, a P-type base region and a long base region. The scene electromagnetic device is a device that can generate electromagnetic waves in the vehicle safety system, including but not limited to a wheel speed sensor, an oxygen sensor, a brake actuator and an engine. This is easy for a person skilled in the art to understand and will not be described in detail.

[0059] The electromagnetic distribution state includes: the electromagnetic influence deviation value is less than the preset electromagnetic influence deviation value and the electromagnetic influence quantity is less than the preset electromagnetic influence quantity, and the electromagnetic influence deviation value is greater than or equal to the preset electromagnetic influence deviation value or the electromagnetic influence quantity is greater than or equal to the preset electromagnetic influence quantity;

[0060] If the electromagnetic distribution state is that the electromagnetic influence deviation value is less than the preset electromagnetic influence deviation value and the electromagnetic influence quantity is less than the preset electromagnetic influence quantity, the quantity confirmation method is to set the quantity of the simulated electromagnetic devices to the standard quantity, wherein the standard quantity is 1;

[0061] If the electromagnetic distribution state is that the electromagnetic influence deviation value is greater than or equal to the preset electromagnetic influence deviation value or the electromagnetic influence quantity is greater than or equal to the preset electromagnetic influence quantity, the quantity confirmation method is to determine the quantity of simulated electromagnetic devices according to the electromagnetic interference direction;

[0062] Among them, the method for confirming the electromagnetic influence deviation value is different for different numbers of electromagnetic influences. If the number of electromagnetic influences is greater than 1, the method for confirming the electromagnetic influence deviation value is that, for any two electromagnetic interference directions, the minimum angle between the two electromagnetic interference directions is recorded as the reference angle, and the angle of each reference angle is identified. The reference angle with the largest angle is the electromagnetic influence deviation value; if the number of electromagnetic influences is equal to 1, the electromagnetic influence deviation value is 0°; the number of electromagnetic influences is the number of scene electromagnetic devices in the vehicle safety system.

[0063] The user can determine the values ​​of the preset electromagnetic influence deviation value and the preset electromagnetic influence quantity according to the actual application scenario. The greater the user's demand for the accuracy of the target usage environment simulation, the smaller the values ​​of the preset electromagnetic influence deviation value and the preset electromagnetic influence quantity. Provided are the values ​​of the preset electromagnetic influence deviation value and the preset electromagnetic influence quantity. The preset electromagnetic influence deviation value is 60°, and the preset electromagnetic influence quantity is 3.

[0064] The method for confirming the direction of electromagnetic interference is that, for a single scene electromagnetic device, the direction of the ray with the placement position of the semiconductor discharge tube to be detected as the endpoint and passing through the reference position of the scene electromagnetic device is the electromagnetic interference direction; the method for confirming the reference position of the scene electromagnetic device is that, for a single scene electromagnetic device, the position of the point in the scene electromagnetic device with the shortest distance from the placement position of the semiconductor discharge tube to be detected is the reference position of the scene electromagnetic device.

[0065] According to the reference temperature value of the semiconductor discharge tube to be detected, the present invention records the process in which the temperature of the target use environment reaches the final insulation time as the reference process. In the reference process, an 8 / 20μs lightning wave is used to perform an impulse current test, a 5kA impulse current is used, and the impulse test is performed 5 times every 1min until the end of the insulation time. A temperature sensor is used to monitor the reference temperature value of the semiconductor discharge tube to be detected in the reference process.

[0066] When detecting the maximum surge current of the semiconductor discharge tube to be detected, the present invention sets the temperature of the target use environment to the highest temperature value of the target use environment during the historical use process. The testing method adopts lightning wave impact detection, adopts 8 / 20μs lightning wave to perform impact current test, takes 5kA impact current as the benchmark test, adopts a step-by-step test method, increases by 1kA as the benchmark, performs impact test 10 times in each stage, cools for 1 minute between each two tests, and the above process is recorded as the target detection process.

[0067] Specifically, if the electromagnetic distribution state is that the electromagnetic influence deviation value is greater than or equal to the preset electromagnetic influence deviation value or the electromagnetic influence number is greater than or equal to the preset electromagnetic influence number, the number of simulated electromagnetic devices is determined according to the electromagnetic interference direction, and the number of simulated electromagnetic devices is equal to the sum of the number of associated combinations and the number of specific directions.

[0068] Specifically, the confirmation method of the associated combination is to perform interference analysis on each electromagnetic interference direction, wherein when performing interference analysis on a single electromagnetic interference direction, the electromagnetic interference direction is recorded as a target electromagnetic interference direction, and the direction deviation value between each electromagnetic interference direction and the target electromagnetic interference direction is detected, and the electromagnetic interference direction with a direction deviation value less than a preset direction deviation value is recorded as an associated electromagnetic interference direction, and the target electromagnetic interference direction and the associated electromagnetic interference direction are recorded as an associated combination;

[0069] If there is an associated combination corresponding to the target electromagnetic interference direction or there is no associated electromagnetic interference direction with a directional deviation value less than a preset directional deviation value, then the interference analysis of the target electromagnetic interference direction is determined to be completed, and interference analysis is continued for other electromagnetic interference directions that are not recorded as associated combinations until the interference analysis of each electromagnetic interference direction is completed.

[0070] Among them, the directional deviation value is the minimum angle between two electromagnetic interference directions; the value of the preset directional deviation value can be determined by the user according to the actual application scenario. The greater the user's demand for the accuracy of the target use environment simulation, the smaller the value of the preset directional deviation value. A preset directional deviation value is provided, and the preset directional deviation value is 30°.

[0071] Specifically, the specific direction is confirmed in such a way that an electromagnetic interference direction without an associated electromagnetic interference direction having a direction deviation value less than a preset direction deviation value is recorded as a specific direction.

[0072] Specifically, a reference coordinate system is established, the origin of which is the position of the semiconductor discharge tube to be detected.

[0073] If there is an associated combination, the position coordinates of each simulated electromagnetic device include x-coordinate, y-coordinate and z-coordinate.

[0074] For a single simulated electromagnetic device, its x coordinate is determined according to the average value of the reference x coordinates of each scene electromagnetic device in the corresponding associated combination, its y coordinate is determined according to the average value of the reference y coordinates of each scene electromagnetic device in the corresponding associated combination, and its z coordinate is determined according to the average value of the reference z coordinates of each scene electromagnetic device in the corresponding associated combination;

[0075] The electromagnetic wave intensity of the simulated electromagnetic device is determined according to the average value of the electromagnetic wave intensity of the electromagnetic devices of each scene in the corresponding associated combination;

[0076] If there is no associated combination, the position coordinates of each simulated electromagnetic device include x-coordinate, y-coordinate and z-coordinate.

[0077] For a single simulated electromagnetic device, its x coordinate is determined according to the average value of the reference x coordinates of the electromagnetic devices of each scene, its y coordinate is determined according to the average value of the reference y coordinates of the electromagnetic devices of each scene, and its z coordinate is determined according to the average value of the reference z coordinates of the electromagnetic devices of each scene;

[0078] The electromagnetic wave intensity of the simulated electromagnetic device is determined according to the average value of the electromagnetic wave intensity of the electromagnetic devices in each scene.

[0079] A method for establishing a reference coordinate system is provided: the position of the semiconductor discharge tube to be detected is taken as the origin, the x-axis extends to the right, the y-axis is perpendicular to the x-axis and extends backward, and the z-axis is perpendicular to the x-axis and the y-axis and extends upward;

[0080] The electromagnetic wave intensity is the electromagnetic wave intensity at the reference position of the electromagnetic device in a single scene, and the unit is T. It can be tested by an electromagnetic wave intensity tester. There is no restriction on the specific model of the electromagnetic wave intensity tester, and users can choose according to their own needs;

[0081] It should be noted that if the electromagnetic distribution state is that the electromagnetic influence deviation value is greater than or equal to the preset electromagnetic influence deviation value or the electromagnetic influence number is greater than or equal to the preset electromagnetic influence number, the position coordinates and electromagnetic wave intensity of the simulated electromagnetic device corresponding to the specific direction are the same as the position coordinates and electromagnetic wave intensity of the scene electromagnetic device in the specific direction.

[0082] Specifically, if the maximum temperature value is greater than the preset maximum temperature value or the maximum temperature duration is greater than the preset maximum temperature duration, the temperature setting method is to increase the detection temperature from the preset initial temperature to the maximum temperature value at a standard heating rate, and keep the temperature when the detection temperature reaches the maximum temperature value, and the heat preservation time is the same as the maximum temperature duration;

[0083] If the maximum temperature value is less than or equal to the preset maximum temperature value and the maximum temperature duration is less than or equal to the preset maximum temperature duration, the temperature setting method is to set the temperature to the maximum temperature value, and the insulation time is the same as the maximum temperature duration.

[0084] Among them, the temperature of the target usage environment can be monitored by a temperature sensor. There is no restriction on the specific model of the temperature sensor as long as it can meet the user needs. The highest temperature value of the target usage environment during historical use is the highest temperature monitored by the temperature sensor during historical use, and the duration of the highest temperature is the time that the temperature sensor maintains the highest temperature during historical use.

[0085] The values ​​of the preset maximum temperature value and the preset maximum temperature duration can be determined by the user according to the actual application scenario. The greater the user's demand for the accuracy of the target usage environment simulation, the closer the preset maximum temperature value is to the room temperature, and the shorter the value of the preset maximum temperature duration is. Provided are the values ​​of the preset maximum temperature value and the preset maximum temperature duration. The preset maximum temperature value is 25°C, and the preset maximum temperature duration is 30 minutes.

[0086] The detection temperature simulates the temperature of the target use environment and provides a method for setting a preset initial temperature and a standard heating rate. The preset initial temperature is 25°C, the standard heating rate is 1°C / min, and the insulation time is the time to maintain the highest temperature value.

[0087] Specifically, if the reference temperature value is greater than or equal to the preset reference temperature value, the thickness of the glass passivation layer is reduced and adjusted;

[0088] The reduction value of the thickness of the glass passivation layer is negatively correlated with the reference temperature value.

[0089] Among them, the reference temperature value is the highest temperature on the surface of the semiconductor discharge tube to be detected during the reference process; the value of the preset reference temperature value can be determined by the user according to the actual application scenario. The greater the user's demand for the stable discharge performance of the semiconductor discharge tube to be detected, the smaller the value of the preset reference temperature value. It can be understood that the higher the reference temperature value, the easier it is for the semiconductor discharge tube to be detected to age, resulting in a decrease in the discharge performance of the semiconductor discharge tube to be detected. A preset reference temperature value is provided, and the preset reference temperature value is 40°C.

[0090] In the present invention, glass scraping is required during the preparation of the semiconductor discharge tube to be tested. In the glass scraping process, lead aluminum silicate glass is selected as the coating material and is coated by a blade scraping method. The thickness L0 of the glass passivation layer is confirmed by dividing the coated glass powder area into b sub-areas with the same area. For a single sub-area, the sub-area is recorded as a reference sub-area, and the thickness of the glass powder coated at the center of the reference sub-area is detected, and the thickness of the glass powder coated at the center of the reference sub-area is recorded as L. Among them, L a The thickness of the glass powder coated at the center of the ath sub-region, the value of b can be determined by the user, the greater the user's demand for the accuracy of thickness detection, the greater the value of b, and a value of b is provided, b = 20. It can be understood that reducing the thickness of the glass passivation layer can reduce the thermal resistance of the semiconductor discharge tube to be detected and improve the heat dissipation performance, but it should be noted that the thickness of the glass passivation layer should be reduced and adjusted under the premise of ensuring that the glass passivation layer has a protective effect.

[0091] Specifically, if the reference temperature value is less than the preset reference temperature value, the optimization detection is performed for the highest temperature value;

[0092] Detecting the temperature difference of the semiconductor discharge tube to be detected, and when the temperature difference is greater than a preset temperature difference, reducing the difference of the glass passivation layer of the semiconductor discharge tube to be detected;

[0093] The relationship between the reduction value of the glass passivation layer difference of the semiconductor discharge tube to be detected and the temperature difference is positively correlated.

[0094] Among them, the temperature difference is the difference between the highest surface temperature of the semiconductor discharge tube to be detected and the lowest surface temperature of the semiconductor discharge tube to be detected; the value of the preset temperature difference can be determined by the user according to the actual application scenario. The greater the user's demand for the semiconductor discharge tube to be detected to have stable discharge performance, the smaller the value of the preset temperature difference is. A value of the preset temperature difference is provided, and the preset temperature difference is 10°C.

[0095] The glass passivation layer difference is the difference between the maximum thickness of the glass passivation layer and the minimum thickness of the glass passivation layer.

[0096] Specifically, if the maximum surge current is less than the preset maximum surge current, the number of P-type base region divisions of the semiconductor discharge tube to be detected is increased;

[0097] The relationship between the increase in the number of divisions of the P-type base region of the semiconductor discharge tube to be detected and the maximum surge current is positively correlated.

[0098] The maximum surge current is the maximum impact current that the semiconductor discharge tube to be detected can withstand and conduct during the target detection process;

[0099] The value of the preset maximum surge current can be determined by the user according to the actual application scenario. The greater the user's demand for excellent performance of the semiconductor discharge tube to be tested, the larger the value of the preset maximum surge current is. A value of the preset maximum surge current is provided, and the preset maximum surge current is 10kA.

[0100] The present invention adopts a binary multiplexing method when dividing the P-type base region of the semiconductor discharge tube to be detected. The specific method is: dividing the P-type base region into 2×2(N+1)2 small blocks, and performing heavy doping diffusion of N-type material on the divided 1P-type base region.

[0101] The number of divisions of the P-type base region of the semiconductor discharge tube to be detected is the number of small blocks into which the P-type base region is divided. It can be understood that increasing the number of divisions of the P-type base region of the semiconductor discharge tube to be detected can increase the maximum surge current of the semiconductor discharge tube to be detected during operation, thereby improving the stability of the semiconductor discharge tube to be detected.

[0102] Specifically, if the maximum surge current is greater than or equal to the preset maximum surge current, the response time is optimized for detection;

[0103] Detecting the response time of the semiconductor discharge tube to be detected, and when the response time is greater than a preset response time, reducing the lead inductance;

[0104] The reduction value of the lead inductance is negatively correlated with the response time.

[0105] Among them, the response time is confirmed in the following way: during the target detection process, for a single lightning wave impact detection, the time required from receiving the impact current to the semiconductor discharge tube to be detected being turned on to discharge the overcurrent is recorded as the reference time, and the average value of the reference time recorded in the target detection process is recorded as the response time; the value of the preset response time can be determined by the user according to the actual application scenario. The greater the user's demand for excellent performance of the semiconductor discharge tube to be detected, the smaller the value of the preset response time is. A value of the preset response time is provided, and the preset response time is 0.5s.

[0106] In the present invention, the lead inductance is reduced and adjusted. It can be understood that by reducing the length and cross-sectional area of ​​the lead connected to the semiconductor discharge tube to be detected, the lead inductance can be reduced, thereby reducing the response time.

[0107] So far, the technical solutions of the present invention have been described in conjunction with the preferred embodiments shown in the accompanying drawings. However, it is easy for those skilled in the art to understand that the protection scope of the present invention is obviously not limited to these specific embodiments. Without departing from the principle of the present invention, those skilled in the art can make equivalent changes or substitutions to the relevant technical features, and the technical solutions after these changes or substitutions will fall within the protection scope of the present invention.

[0108] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A method for detecting the discharge performance of a semiconductor discharge tube, characterized in that: include: Acquire the semiconductor discharge tube to be detected, and acquire relevant data of the target use environment of the semiconductor discharge tube to be detected, wherein the relevant data of the target use environment includes temperature, position of the scene electromagnetic device, and electromagnetic wave intensity of the scene electromagnetic device; Determine the electromagnetic distribution state according to the electromagnetic influence deviation value and the electromagnetic influence quantity in the target use environment; Determine the quantity confirmation method according to the electromagnetic distribution state of the target use environment and whether to determine the location and electromagnetic wave intensity of the simulated electromagnetic device according to each scene electromagnetic device in each associated combination; The quantity confirmation method is to determine the number of simulated electromagnetic devices according to the electromagnetic interference direction, or to set the number of simulated electromagnetic devices to a standard number; Determine the temperature setting method according to the highest temperature value of the target use environment and the duration of the highest temperature during historical use; Determine to adjust the thickness of the glass passivation layer according to the reference temperature value of the semiconductor discharge tube to be tested, or perform optimized testing according to the maximum temperature value; The maximum surge current of the semiconductor discharge tube to be detected is detected, and the number of P-type base region divisions for the semiconductor discharge tube to be detected is adjusted according to the maximum surge current, or the response time of the semiconductor discharge tube to be detected is optimized.

2. The method for detecting the discharge performance of a semiconductor discharge tube according to claim 1, characterized in that: If the electromagnetic distribution state is that the electromagnetic influence deviation value is greater than or equal to the preset electromagnetic influence deviation value or the electromagnetic influence quantity is greater than or equal to the preset electromagnetic influence quantity, the number of simulated electromagnetic devices is determined according to the electromagnetic interference direction, and the number of simulated electromagnetic devices is equal to the sum of the number of associated combinations and the number of specific directions.

3. The method for detecting the discharge performance of a semiconductor discharge tube according to claim 2, characterized in that: The confirmation method of the associated combination is to perform interference analysis on each electromagnetic interference direction, wherein when performing interference analysis on a single electromagnetic interference direction, the electromagnetic interference direction is recorded as a target electromagnetic interference direction, and the direction deviation value between each electromagnetic interference direction and the target electromagnetic interference direction is detected, and the electromagnetic interference direction with a direction deviation value less than a preset direction deviation value is recorded as an associated electromagnetic interference direction, and the target electromagnetic interference direction and the associated electromagnetic interference direction are recorded as an associated combination; If there is an associated combination corresponding to the target electromagnetic interference direction or there is no associated electromagnetic interference direction with a directional deviation value less than a preset directional deviation value, then the interference analysis of the target electromagnetic interference direction is determined to be completed, and interference analysis is continued for other electromagnetic interference directions that are not recorded as associated combinations until the interference analysis of each electromagnetic interference direction is completed.

4. The method for detecting the discharge performance of a semiconductor discharge tube according to claim 2, characterized in that: The specific direction is confirmed in such a way that the electromagnetic interference direction without the associated electromagnetic interference direction having a direction deviation value less than a preset direction deviation value is recorded as the specific direction.

5. The method for detecting the discharge performance of a semiconductor discharge tube according to claim 4, characterized in that: A reference coordinate system is established, with the origin of the coordinate system being the position of the semiconductor discharge tube to be detected. If there is an associated combination, the position coordinates of each simulated electromagnetic device include x-coordinate, y-coordinate and z-coordinate. For a single simulated electromagnetic device, its x coordinate is determined according to the average value of the reference x coordinates of each scene electromagnetic device in the corresponding associated combination, its y coordinate is determined according to the average value of the reference y coordinates of each scene electromagnetic device in the corresponding associated combination, and its z coordinate is determined according to the average value of the reference z coordinates of each scene electromagnetic device in the corresponding associated combination; The electromagnetic wave intensity of the simulated electromagnetic device is determined according to the average value of the electromagnetic wave intensity of the electromagnetic devices of each scene in the corresponding associated combination; If there is no associated combination, the position coordinates of each simulated electromagnetic device include x-coordinate, y-coordinate and z-coordinate. For a single simulated electromagnetic device, its x coordinate is determined according to the average value of the reference x coordinates of the electromagnetic devices of each scene, its y coordinate is determined according to the average value of the reference y coordinates of the electromagnetic devices of each scene, and its z coordinate is determined according to the average value of the reference z coordinates of the electromagnetic devices of each scene; The electromagnetic wave intensity of the simulated electromagnetic device is determined according to the average value of the electromagnetic wave intensity of the electromagnetic devices in each scene.

6. The method for detecting the discharge performance of a semiconductor discharge tube according to claim 5, characterized in that: If the maximum temperature value is greater than the preset maximum temperature value or the maximum temperature duration is greater than the preset maximum temperature duration, the temperature setting method is to increase the detection temperature from the preset initial temperature to the maximum temperature value at the standard heating rate, and keep the temperature when the detection temperature reaches the maximum temperature value, and the heat preservation time is the same as the maximum temperature duration; If the maximum temperature value is less than or equal to the preset maximum temperature value and the maximum temperature duration is less than or equal to the preset maximum temperature duration, the temperature setting method is to set the temperature to the maximum temperature value, and the insulation time is the same as the maximum temperature duration.

7. The method for detecting the discharge performance of a semiconductor discharge tube according to claim 6, characterized in that: If the reference temperature value is greater than or equal to the preset reference temperature value, the thickness of the glass passivation layer is reduced and adjusted; The reduction value of the thickness of the glass passivation layer is negatively correlated with the reference temperature value.

8. The method for detecting the discharge performance of a semiconductor discharge tube according to claim 7, characterized in that: If the reference temperature value is less than the preset reference temperature value, the optimization detection is performed for the highest temperature value; Detecting the temperature difference of the semiconductor discharge tube to be detected, and when the temperature difference is greater than a preset temperature difference, reducing the difference of the glass passivation layer of the semiconductor discharge tube to be detected; The relationship between the reduction value of the glass passivation layer difference of the semiconductor discharge tube to be detected and the temperature difference is positively correlated.

9. The method for detecting the discharge performance of a semiconductor discharge tube according to claim 8, characterized in that: If the maximum surge current is less than the preset maximum surge current, the number of P-type base region divisions of the semiconductor discharge tube to be detected is increased; The relationship between the increase in the number of divisions of the P-type base region of the semiconductor discharge tube to be detected and the maximum surge current is positively correlated.

10. The method for detecting the discharge performance of a semiconductor discharge tube according to claim 9, characterized in that: If the maximum surge current is greater than or equal to the preset maximum surge current, optimizing the response time of the semiconductor discharge tube to be tested; Detecting the response time of the semiconductor discharge tube to be detected, and when the response time is greater than a preset response time, reducing the lead inductance; The reduction value of the lead inductance is negatively correlated with the response time.

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