A wafer center alignment adjustment method and wafer detection equipment

Abstract

The invention relates to the field of semiconductor detection technology, and discloses a wafer center alignment adjustment method and a wafer detection device. The wafer center alignment adjustment method of the invention comprises the following steps: a first imaging device, a second imaging device, a platform, a turntable and a calibration line are arranged to cooperate with each other; the calibration line rotates together with the turntable, and the platform can drive the turntable to move along the x-axis; the calibration line is firstly made parallel to the x-axis of the platform; and the horizontal directions of the images of two imaging devices are then made parallel to the calibration line; and a standard wafer is then placed on the turntable; the limit position of the standard wafer is calculated to obtain the center distance between the turntable and the standard wafer, so as to adjust the position of the turntable so that the center of the turntable and the standard wafer are aligned; and finally, the centers of the two imaging devices are respectively aligned with the left and right end points of the x-axis of the standard wafer, so that the midpoint on the line connecting the center points of the two imaging devices is aligned with the center of the turntable, so that the wafer can be detected more accurately.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor detection technology, and in particular to a wafer center alignment adjustment method and wafer detection equipment. Background Art

[0002] In the semiconductor large-scale integrated circuit front-end manufacturing process, a large number of non-patterned wafers need to be inspected or defect-re-inspected to detect whether the wafers have eccentricity or stripe defects. At this time, the wafers need to be sent to the inspection device for inspection, and the inspection device has strict position requirements during installation to ensure more accurate inspection results. For example, the patent with publication number CN117405040A discloses a wafer inspection device. On this basis, a method is needed to align the midpoint of the line connecting the center points of the two imaging devices with the center of the microporous adsorption turntable, so that the center alignment of the subsequent wafers to be inspected can be more convenient and accurate. Summary of the invention

[0003] In order to solve at least one aspect of the above problems, the present invention first provides a method for adjusting the center alignment of a wafer, comprising a first imaging device, a second imaging device, a platform, and a turntable arranged on the platform, wherein the platform can translate along the x-axis or the y-axis, and the turntable can adsorb the wafer and drive the wafer to rotate. The method is characterized in that the method further comprises a calibration device detachably connected to the turntable, wherein the calibration device is provided with a calibration line that rotates with the turntable, the first imaging device and the second imaging device generate a first image and a second image respectively, and the adjustment method comprises the following steps:

[0004] S1, enabling the first image and the second image to simultaneously image the calibration line, and the projection of the calibration line on the turntable is located between the center and the edge of the turntable;

[0005] S2, moving the platform back and forth along the x-axis, if the imaging position of the calibration line changes in the y-axis direction, proceed to S3, otherwise proceed to S4;

[0006] S3, rotating the turntable and repeating S2 until the imaging position of the calibration line does not change in the y-axis direction, and the calibration line is parallel to the x-axis;

[0007] The specific process of rotating the turntable in S3 is as follows: S31, the intersection point of the calibration line and an edge of the first image is initially point A, after the platform is moved along the x-axis, the intersection point of the calibration line and the same edge of the first image becomes point B, the coordinates of point A and point B on the first image can be obtained through pixels, the distance n between point A and point B is calculated, and the turntable is controlled to rotate so that the distance n is gradually reduced to zero, so that the calibration line is parallel to the x-axis;

[0008] S32, when the platform is moved along the positive direction of the x-axis by a distance m, the difference angle α between the calibration line and the x-axis can be obtained by the tangent value between the distance n and the distance m, and the turntable is controlled to rotate α degrees so that the calibration line is parallel to the x-axis;

[0009] S4, rotating the first imaging device and the second imaging device so that the horizontal directions of the first image and the second image are parallel to the direction of the calibration line, and disassembling the calibration line;

[0010] The specific process of rotating the first imaging device in S4 is as follows: S41, the intersection points of the calibration line and the left and right sides of the first image are point C and point D, the coordinates of point C and point D on the first image can be obtained through pixels, and the first imaging device is rotated until the longitudinal coordinates of point C and point D are the same, so that the horizontal direction of the first image is parallel to the calibration line;

[0011] S42, calculating the ordinate difference and the abscissa difference between the point C and the point D according to the coordinates of the point C and the point D on the first image, obtaining the angle difference β between the calibration line and the upper / lower edge of the first image according to the tangent value between the ordinate difference and the abscissa difference, and controlling the first imaging device to rotate by an angle β so that the horizontal direction of the first image is parallel to the calibration line;

[0012] S5, placing a standard wafer on the turntable, rotating the turntable so that the standard wafer reaches the first limit position and the second limit position in sequence, calculating the spacing value between the left / right limit points of the first limit position and the second limit position, lifting the standard wafer, moving the platform along the x-axis direction by half of the limit point spacing value, aligning the center of the turntable with the center of the second limit position, and placing the standard wafer, at which time the center of the turntable and the center of the standard wafer are aligned;

[0013] The specific process of obtaining the spacing value between the left / right limit points of the first limit position and the second limit position in S5 is:

[0014] S51. When the standard wafer reaches the first limit position, the position of the leftmost end of the standard wafer on the first image is the first limit point. When the standard wafer reaches the second limit position, the position of the leftmost end of the standard wafer on the first image is the second limit point. The coordinates of the first limit point and the second limit point on the first image can be obtained through pixels, and the first limit position, the second limit position and the center of the turntable are all on the first straight line. Therefore, the first limit point and the second limit point are both on the first straight line. The distance between the centers of the horizontal plane projections of the turntable and the standard wafer is half of the distance d between the first limit point and the second limit point. At this time, lift the standard wafer, move the platform along the x-axis direction by a distance of 1 / 2d to align the center of the turntable with the center of the second limit position. At this time, put down the standard wafer, and align the center of the turntable with the center of the standard wafer.

[0015] S6. Align the center points of the first image and the second image with the left and right end points of the x-axis of the standard wafer respectively, so that the midpoint of the line connecting the center points of the first image and the second image is aligned with the center of the turntable.

[0016] Optionally, both the first image and the second image are square images.

[0017] Compared with the prior art, the adjustment method for wafer center alignment in the present invention cooperates with a first imaging device, a second imaging device, a platform, a turntable and a calibration line. The calibration line rotates together with the turntable, and the platform can drive the turntable to move along the x-axis. The calibration line is first made parallel to the x-axis of the platform, and then the horizontal directions of the images of the two imaging devices are parallel to the calibration line. Then, a standard wafer is placed on the turntable, and the center distance between the turntable and the standard wafer is obtained by calculating the extreme position of the standard wafer, so as to adjust the position of the turntable to align the centers of the turntable and the standard wafer. Finally, the centers of the two imaging devices are respectively aligned with the left and right end points of the x-axis of the standard wafer, so that the midpoint of the line connecting the center points of the two imaging devices is aligned with the center of the turntable. When the subsequent wafer to be inspected is to be center-aligned, the position deviation value between the current wafer to be inspected and the center of the turntable can be obtained by detecting the difference between the pixel coordinates of the left and right end points of the wafer to be inspected in the first image and the second image and the center coordinates. At this time, the wafer to be inspected is lifted up, and the platform is moved along the x-axis and y-axis to adjust the position so that the center of the turntable is aligned with the center of the wafer to be inspected. Then the wafer to be inspected is put down and the platform is moved back to its original position, so that the wafer to be inspected can be aligned with the center of the turntable.

[0018] In addition, the present invention provides a wafer detection device for implementing the adjustment method of wafer center alignment as described above, comprising a first imaging device, a second imaging device, a platform and a turntable arranged on the platform, wherein the platform can translate along the x-axis, the turntable can adsorb the wafer and drive the wafer to rotate, and also comprises a calibration device detachably connected to the turntable, wherein the calibration device is provided with a calibration line.

[0019] Optionally, the calibration device is provided with a limit step, which includes a first step and a second step, the inner wall of the first step abuts against the outer wall of the turntable and is connected by bolts, and the bottom wall of the second step abuts against the top wall of the turntable.

[0020] Optionally, a mounting portion is provided on the calibration device, and the calibration line is passed through left and right ends of the mounting portion.

[0021] Compared with the prior art, the wafer inspection device of the present invention and the above-mentioned wafer center alignment adjustment method have the same advantages as those of the prior art, which will not be described in detail here. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 A flow chart of a method for adjusting wafer center alignment of the present invention;

[0023] Figure 2 Schematic diagram of wafer center alignment adjustment method S31 of the present invention;

[0024] Figure 3 Schematic diagram of wafer center alignment adjustment method S41 of the present invention;

[0025] Figure 4 Schematic diagram of wafer center alignment adjustment method S51 of the present invention;

[0026] Figure 5 A structural diagram of a wafer inspection device according to an embodiment of the present invention;

[0027] Figure 6 for Figure 4 Enlarged view of the middle K section;

[0028] Figure 7 4 is a structural diagram of a calibration device according to an embodiment of the present invention.

[0029] Description of reference numerals:

[0030] 1. First imaging device; 11. First image; 2. Second imaging device; 21. Second image; 3. Platform; 4. Turntable; 5. Calibration device; 51. Limit step; 511. First step; 512. Second step; 52. Mounting part; 53. Calibration line; 6. Standard wafer; 61. First limit position; 611. First limit point; 612. Third limit point; 62. Second limit position; 621. Second limit point; 622. Fourth limit point. DETAILED DESCRIPTION

[0031] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0032] In the description of the present invention, it should be understood that the terms "upper", "lower" and the like indicate positions or location relationships that are based on the positions or location relationships when the product is normally used.

[0033] The terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. A coordinate system XYZ is provided in the drawings of the embodiments of the present invention, wherein the positive direction of the X-axis represents the left, the reverse direction of the X-axis represents the right, the positive direction of the Y-axis represents the front, the reverse direction of the Y-axis represents the back, the positive direction of the Z-axis represents the top, and the reverse direction of the Z-axis represents the bottom.

[0034] The embodiment of the present invention provides a method for adjusting the center alignment of a wafer, Figure 1-7 As shown, it includes a first imaging device 1, a second imaging device 2, a platform 3 and a turntable 4 arranged on the platform 3, the platform 3 can translate along the x-axis or y-axis, the turntable 4 can adsorb the wafer and drive the wafer to rotate, the adjustment method also includes a calibration device 5 detachably connected to the turntable 4, the calibration device 5 is provided with a calibration line 53, the image generated by the first imaging device 1 is a first image 11, the image generated by the second imaging device 2 is a second image 21, and the adjustment method includes the following steps:

[0035] S1. Install the calibration line 53 and adjust the positions of the first imaging device 1 and the second imaging device 2 so that the image projection of the calibration line 53 can pass through the first image 11 and the second image 21 at the same time, and the projection of the calibration line 53 on the turntable 4 roughly passes through the center of the turntable 4, and the turntable 4 can drive the calibration line 53 to rotate together when rotating;

[0036] S2, moving the platform 3 back and forth along the x-axis. If the imaging position of the calibration line 53 on the first image 11 and the second image 21 changes in the y-axis direction, it means that the calibration line 53 is not parallel to the x-axis direction of the platform 3, and S3 is performed at this time; if the imaging position of the calibration line 53 on the first image 11 and the second image 21 does not change in the y-axis direction, it means that the calibration line 53 is parallel to the x-axis direction of the platform 3, and S4 is performed at this time;

[0037] S3, controlling the turntable 4 to drive the calibration line 53 to rotate, and then repeating S2 until the imaging position of the calibration line 53 on the first image 11 and the second image 21 does not change in the y-axis direction, so that the calibration line 53 is parallel to the x-axis;

[0038] S4, rotating the first imaging device 1 so that the horizontal direction of the first image 11 is parallel to the direction of the calibration line 53, rotating the second imaging device 2 so that the horizontal direction of the second image 21 is parallel to the direction of the calibration line 53, and then disassembling the calibration line 53;

[0039] S5, place a standard wafer 6 on the turntable 4, the turntable 4 rotates along its own axis and drives the standard wafer 6 to rotate, the turntable 4 is rotated forward to make the standard wafer 6 reach the first extreme position 61, and then the turntable 4 is continued to rotate to make the standard wafer 6 reach the second extreme position 62, so as to obtain the spacing value between the left / right extreme points of the first extreme position 61 and the second extreme position 62, and the center distance between the turntable 4 and the standard wafer 6 is half of the spacing value of the extreme points, at this time, lift the standard wafer 6, move the platform 3 along the x-axis direction by half of the spacing value of the extreme points, so that the center of the turntable 4 is aligned with the center of the second extreme position 62, and then put down the standard wafer 6, and the center of the turntable 4 is aligned with the center of the standard wafer 6;

[0040] S6. Adjust the positions of the first imaging device 1 and the second imaging device 2 so that the center point of the first image 11 and the center point of the second image 21 are respectively aligned with the left and right end points of the x-axis of the standard wafer 6, so that the midpoint of the line connecting the center points of the first image 11 and the second image 21 is aligned with the center of the turntable 4.

[0041] In the present invention, a default cross center is set on both the first image 11 and the second image 21 to facilitate the alignment of the endpoints. Because in the actual installation process, it is difficult for the projection of the calibration line 53 on the turntable 4 to accurately pass through the center of the turntable 4, the projection of the calibration line 53 on the turntable 4 is generally located between the center and the edge of the turntable 4.

[0042] like Figure 1 and 5 As shown, the adjustment method for wafer center alignment in the present invention is provided by arranging a first imaging device 1, a second imaging device 2, a platform 3, a turntable 4 and a calibration line 53 to cooperate with each other. The calibration line 53 rotates together with the turntable 4, and the platform 3 can drive the turntable 4 to move along the x-axis. First, the calibration line 53 is parallel to the x-axis of the platform 3, and then the horizontal directions of the images of the two imaging devices are parallel to the calibration line 53. Then, a standard wafer 6 is placed on the turntable 4, and the center distance between the turntable 4 and the standard wafer 6 is obtained by calculating the extreme position of the standard wafer 6, so as to adjust the position of the turntable 4 so that the center of the turntable 4 and the standard wafer 6 are aligned. Finally, the centers of the two imaging devices are respectively aligned with the left and right end points of the x-axis of the standard wafer 6, so that the midpoint of the line connecting the center points of the two imaging devices is aligned with the center of the turntable 4, so that the wafer can be detected more accurately. After the detection device is adjusted, when the subsequent wafer to be inspected is to be center-aligned, the position deviation value between the current wafer to be inspected and the center of the turntable 4 can be known by detecting the difference between the pixel coordinates of the left and right end points of the wafer to be inspected in the first image 11 and the second image 21 and the center coordinates. At this time, the wafer to be inspected is lifted up, and the platform 3 is moved and adjusted along the x-axis and y-axis to align the center of the turntable 4 with the center of the wafer to be inspected. Then the wafer to be inspected is put down and the platform 3 is moved back to its original position, so that the wafer to be inspected and the center of the turntable 4 can be aligned.

[0043] The specific process of rotating the calibration line 53 in S3 is:

[0044] S31, the intersection point of the calibration line 53 and an edge of the first image 11 is initially point A. After the platform 3 is moved along the x-axis, the intersection point of the calibration line 53 and the same edge of the first image 11 becomes point B. The coordinates of point A and point B on the first image 11 can be obtained through pixels. The distance n between point A and point B is calculated, and the turntable 4 is controlled to rotate so that the distance n gradually decreases to zero, so that the calibration line 53 is parallel to the x-axis.

[0045] like Figure 2 As shown, in this embodiment, the first imaging device 1 and the second imaging device 2 can detect in real time. When the turntable 4 rotates in the forward direction, if the detected distance n becomes smaller, it means that the rotation direction of the turntable 4 is correct. If the detected distance n becomes larger, it means that the rotation direction of the turntable 4 is wrong. At this time, the rotation direction of the turntable 4 is changed to reduce the distance n.

[0046] The specific process of rotating the calibration line 53 in S3 is:

[0047] S32, when the platform 3 moves a distance m in the positive direction along the x-axis, the angle difference α between the calibration line 53 and the x-axis can be obtained through the tangent value between the distance n and the distance m, and the turntable 4 is controlled to rotate α degrees so that the calibration line 53 is parallel to the x-axis.

[0048] Furthermore, trigonometric functions may be used to directly calculate the difference angle α, which can reduce the number of detections by the first imaging device 1 and the second imaging device 2 .

[0049] The specific process of rotating the first imaging device 1 in S4 is:

[0050] S41, the intersection points of the calibration line 53 and the left and right sides of the first image 11 are point C and point D, the coordinates of point C and point D on the first image 11 can be obtained through pixels, and the first imaging device 1 is rotated until the longitudinal coordinates of point C and point D are the same, so that the horizontal direction of the first image 11 is parallel to the calibration line 53.

[0051] like Figure 3 As shown, in this embodiment, the first imaging device 1 can detect in real time. When the first imaging device 1 rotates forward, if the detected vertical coordinate difference between point C and point D becomes smaller, it means that the rotation direction of the turntable 4 is correct. If the detected vertical coordinate difference between point C and point D becomes larger, it means that the rotation direction of the turntable 4 is wrong. At this time, the rotation direction of the turntable 4 is changed to reduce the vertical coordinate difference between point C and point D. The adjustment method of the second imaging device 2 is the same as that of the first imaging device 1, so that the horizontal direction of the second image 21 is parallel to the calibration line 53.

[0052] The specific process of rotating the first imaging device 1 in S4 is:

[0053] S42. Calculate the ordinate difference and the abscissa difference between the point C and the point D through their coordinates on the first image 11, obtain the angle difference β between the calibration line 53 and the upper / lower edge of the first image 11 through the tangent value between the ordinate difference and the abscissa difference, and control the first imaging device 1 to rotate by an angle β so that the horizontal direction of the first image 11 is parallel to the calibration line 53.

[0054] Furthermore, trigonometric functions may be used to directly calculate the difference angle β, which can reduce the number of detections by the first imaging device 1 and the second imaging device 2 .

[0055] The specific process of obtaining the spacing value between the left / right limit points of the first limit position 61 and the second limit position 62 in S5 is as follows:

[0056] S51, when the standard wafer 6 reaches the first limit position 61, the position of the leftmost end of the standard wafer 6 on the first image 11 is the first limit point 611, when the standard wafer 6 reaches the second limit position 62, the position of the leftmost end of the standard wafer 6 on the first image 11 is the second limit point 621, the coordinates of the first limit point 611 and the second limit point 621 on the first image 11 can be obtained through pixels, and the first limit position 61, the second limit position 62 and the center of the turntable 4 are all It is on the first straight line, so the first limit point 611 and the second limit point 621 are both on the first straight line, and the center distance of the horizontal plane projection between the turntable 4 and the standard wafer 6 is half of the distance d between the first limit point 611 and the second limit point 621. At this time, lift the standard wafer 6, move the platform 3 along the x-axis direction by a distance of 1 / 2d to align the center of the turntable 4 with the center of the second limit position 62, and then put down the standard wafer 6, and the center of the turntable 4 is aligned with the center of the standard wafer 6.

[0057] like Figure 4 As shown, in this embodiment, the first imaging device 1 and the second imaging device 2 are respectively located above the left and right sides of the standard wafer 6. Therefore, similarly, when the standard wafer 6 reaches the first limit position 61, the rightmost end of the standard wafer 6 on the second image 21 is the third limit point 612, and when the standard wafer 6 reaches the second limit position 62, the rightmost end of the standard wafer 6 on the second image 21 is the fourth limit point 622, and the distance between the third limit point 612 and the fourth limit point 622 is equal to the distance d between the first limit point 611 and the second limit point 621.

[0058] When the standard wafer 6 is at the initial position, the center point is point E; when the standard wafer 6 reaches the first extreme position 61, the center point is point F; when the standard wafer 6 reaches the second extreme position 62, the center point is point G, and the center point of the turntable 4 is point H.

[0059] The distance between the centers of the horizontal plane projections of the turntable 4 and the standard wafer 6 is half the distance d between the first limit point 611 and the second limit point 621, and the derivation process is as follows:

[0060] like Figure 4 , let the first limit point 611 be point P, the second limit point 621 be point Q, the radius value of the standard wafer 6 be R, and during the rotation process, the center of the standard wafer 6 rotates around the center of the turntable 4 and forms a virtual circle, and the radius value of the virtual circle is r.

[0061] Because PE = PF - EF = Rr;

[0062] Because QE=QH+EH=R+r;

[0063] So PQ = QE-PE = (R+r)-(Rr) = 2r;

[0064] Therefore, the distance between the centers of the horizontal plane projections of the turntable 4 and the standard wafer 6 is half the distance d between the first limit point 611 and the second limit point 621 .

[0065] The first image 11 and the second image 21 are both square images.

[0066] Another embodiment of the present invention provides a wafer inspection device for implementing the adjustment method of wafer center alignment as described above, comprising a first imaging device 1, a second imaging device 2, a platform 3 and a turntable 4 arranged on the platform 3, wherein the platform 3 can translate along the x-axis, the turntable 4 can adsorb the wafer and drive the wafer to rotate, and also comprises a calibration device 5 detachably connected to the turntable 4, wherein the calibration device 5 is provided with a calibration line 53.

[0067] The calibration device 5 is provided with a limiting step 51, and the limiting step 51 includes a first step 511 and a second step 512, the inner side wall of the first step 511 abuts against the outer side wall of the turntable 4 and is connected by bolts, and the bottom wall of the second step 512 abuts against the top wall of the turntable 4.

[0068] like Figure 5-7 As shown, in this embodiment, the limiting step 51 is arranged at the middle position of the calibration device 5, the first step 511 is annular, and the radius of the ring is slightly larger than the radius of the turntable 4, the first step 511 can rotate with the turntable 4 under the action of the bolt connection, and the second step 512 is used to limit the installation position of the calibration device 5, and the first step 511 and the second step 512 cooperate to make the calibration device 5 and the turntable 4 detachably connected.

[0069] The calibration device 5 is provided with a mounting portion 52 , and the calibration line 53 is passed through left and right ends of the mounting portion 52 .

[0070] like Figure 7 As shown, in this embodiment, both ends of the mounting portion 52 are provided with through holes for the calibration line 53 to pass through, so that the calibration line 53 is straightened.

[0071] The wafer inspection equipment also includes a control device and a manipulator, wherein the first imaging device 1, the second imaging device 2, the platform 3, the turntable 4 and the manipulator are all electrically connected to the control device. The control device is provided with a program for calculating each step. The manipulator is used to pick up and place wafers to achieve automation.

[0072] Although the disclosure is disclosed as above, the protection scope of the disclosure is not limited thereto. Those skilled in the art may make various changes and modifications without departing from the spirit and scope of the disclosure, and these changes and modifications will fall within the protection scope of the present invention.

Claims

1. A method for adjusting the center alignment of a wafer, comprising a first imaging device (1), a second imaging device (2), a platform (3), and a turntable (4) arranged on the platform (3), wherein the platform (3) can be translated along an x-axis or a y-axis, and the turntable (4) can absorb a wafer and drive the wafer to rotate, characterized in that: The apparatus further comprises a calibration device (5) detachably connected to the turntable (4), wherein the calibration device (5) is provided with a calibration line (53) that rotates together with the turntable (4), wherein the first imaging device (1) and the second imaging device (2) respectively generate a first image (11) and a second image (21), and wherein the adjustment method comprises the following steps: S1, enabling the first image (11) and the second image (21) to simultaneously image the calibration line (53), and the projection of the calibration line (53) on the turntable (4) is located between the center and the edge of the turntable (4); S2, moving the platform (3) back and forth along the x-axis, if the imaging position of the calibration line (53) changes in the y-axis direction, proceed to S3, otherwise proceed to S4; S3, rotating the turntable (4) and repeating S2 until the imaging position of the calibration line (53) does not change in the y-axis direction, and at this time, the calibration line (53) is parallel to the x-axis; The specific process of rotating the turntable (4) in S3 is as follows: S31, the intersection point of the calibration line (53) and an edge of the first image (11) is initially point A, and after the platform (3) is moved along the x-axis, the intersection point of the calibration line (53) and the same edge of the first image (11) becomes point B, the coordinates of point A and point B on the first image (11) can be obtained through pixels, the distance n between point A and point B is calculated, and the turntable (4) is controlled to rotate so that the distance n is gradually reduced to zero, so that the calibration line (53) is parallel to the x-axis; S32, when the platform (3) is moved a distance m in the positive direction of the x-axis, the difference angle α between the calibration line (53) and the x-axis can be obtained by the tangent value between the distance n and the distance m, and the turntable (4) is controlled to rotate α degrees so that the calibration line (53) is parallel to the x-axis; S4, rotating the first imaging device (1) and the second imaging device (2) so that the horizontal directions of the first image (11) and the second image (21) are parallel to the direction of the calibration line (53), and disassembling the calibration line (53); The specific process of rotating the first imaging device (1) in S4 is as follows: S41, the intersection points of the calibration line (53) and the left and right sides of the first image (11) are point C and point D, the coordinates of point C and point D on the first image (11) can be obtained through pixels, and the first imaging device (1) is rotated until the longitudinal coordinates of point C and point D are the same, so that the horizontal direction of the first image (11) is parallel to the calibration line (53); S42, calculating the ordinate difference and the abscissa difference between the point C and the point D through the coordinates of the point C and the point D on the first image (11), obtaining the angle difference β between the calibration line (53) and the upper / lower side of the first image (11) through the tangent value between the ordinate difference and the abscissa difference, and controlling the first imaging device (1) to rotate by an angle β so that the horizontal direction of the first image (11) is parallel to the calibration line (53); S5, placing a standard wafer (6) on the turntable (4), rotating the turntable (4) so ​​that the standard wafer (6) reaches the first extreme position (61) and the second extreme position (62) in turn, calculating the spacing value between the left / right extreme points of the first extreme position (61) and the second extreme position (62), lifting the standard wafer (6), moving the platform (3) along the x-axis direction by half of the spacing value of the extreme points, aligning the centers of the turntable (4) and the second extreme position (62), and placing the standard wafer (6), at which time the centers of the turntable (4) and the standard wafer (6) are aligned; The specific process of obtaining the spacing value between the left / right limit points of the first limit position (61) and the second limit position (62) in S5 is as follows: S51, when the standard wafer (6) reaches the first limit position (61), the position of the leftmost end of the standard wafer (6) on the first image (11) is the first limit point (611); when the standard wafer (6) reaches the second limit position (62), the position of the leftmost end of the standard wafer (6) on the first image (11) is the second limit point (621); the coordinates of the first limit point (611) and the second limit point (621) on the first image (11) can both be obtained through pixels, and the first limit position ( 61), the second limit position (62) and the center of the turntable (4) are all on the first straight line, so the first limit point (611) and the second limit point (621) are both on the first straight line, and the distance between the centers of the turntable (4) and the standard wafer (6) projected on the horizontal plane is half the distance d between the first limit point (611) and the second limit point (621). At this time, the standard wafer (6) is lifted up, and the platform (3) is moved along the x-axis direction by a distance of 1 / 2d so that the center of the turntable (4) is aligned with the center of the second limit position (62). At this time, the standard wafer (6) is put down, and the center of the turntable (4) is aligned with the center of the standard wafer (6); S6. The center points of the first image (11) and the second image (21) are respectively aligned with the left and right end points of the x-axis of the standard wafer (6), so that the midpoint of the line connecting the center points of the first image (11) and the second image (21) is aligned with the center of the turntable (4).

2. The method for adjusting wafer center alignment according to claim 1, characterized in that: The first image (11) and the second image (21) are both square images.

3. A wafer detection device for implementing the wafer center alignment adjustment method as described in any one of claims 1 and 2, characterized in that: The invention comprises a first imaging device (1), a second imaging device (2), a platform (3), and a turntable (4) arranged on the platform (3); the platform (3) can translate along the x-axis; the turntable (4) can adsorb a wafer and drive the wafer to rotate; and a calibration device (5) detachably connected to the turntable (4); the calibration device (5) is provided with a calibration line (53).

4. The wafer inspection device according to claim 3, characterized in that: The calibration device (5) is provided with a limiting step (51), and the limiting step (51) comprises a first step (511) and a second step (512), the inner side wall of the first step (511) abuts against the outer side wall of the turntable (4) and is connected by bolts, and the bottom wall of the second step (512) abuts against the top wall of the turntable (4).

5. The wafer inspection device according to claim 3, characterized in that: The calibration device (5) is provided with a mounting portion (52), and the calibration line (53) is passed through the left and right ends of the mounting portion (52).

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