Rotary self-cleaning etching device

Abstract

The present application discloses a rotary self-cleaning etching device, comprising a working room, a dielectric cover, a carrier, a carrier, a coil, an inner cover, a rotary drive, a lifting drive and a lifting assembly, wherein a shielding edge is provided at the bottom of the inner cover, which can prevent pollutants from entering the working room; a soft metal film is attached to the surface of the inner cover, which can reliably and efficiently capture pollutants generated during the etching process, thereby ensuring the cleanliness of the etching environment and the effect of wafer surface treatment; the rotating drive drives the carrier to rotate, which can improve the uniformity of coating and etching; the lifting assembly enables the inner cover to rotate with the carrier, which can avoid the inner cover and the dielectric cover from sticking and the perforation from being blocked, and can also throw off pollutants with poor adhesion, thereby further ensuring the cleanliness of the environment in the cavity; a cleaning member is provided on the outer wall of the inner cover, which can rotate and clean the dielectric cover by the cleaning member, and can also achieve self-cleaning of the cavity wall, thereby reducing the need for stopping the machine for unpacking.

Description

Technical Field

[0001] The present application relates to the technical field of wafer etching, and in particular to a rotary self-cleaning etching device. Background Art

[0002] Plasma etching is a method of wafer surface treatment. Radio frequency inductively coupled gas discharge is one of the important ways to generate plasma. In an inductively coupled system, power is directly applied to a coil outside a vacuum chamber. The electromagnetic field energy generated by the coil is gathered in the vacuum chamber, exciting gas discharge to form plasma, so that positively charged ions bombard the wafer surface, thereby removing natural oxides or fluorocarbon residues on the wafer surface, and finally etching the desired shape on the wafer surface.

[0003] During the wafer etching process, pollutants such as oxides and nitrides will be generated, which will adhere to the chamber wall of the studio under the action of etching; as the etching continues, the pollutants accumulated on the chamber wall will fall off. If the pollutants fall onto the wafer surface, it will affect the surface process of the wafer. Summary of the invention

[0004] The purpose of the present application is to overcome the deficiencies in the prior art and to provide a rotary self-cleaning etching device.

[0005] To achieve the above technical objectives, the present application provides a rotary self-cleaning etching device, comprising: a studio and a dielectric cover, the dielectric cover is arranged on the studio and connected to the studio, a wafer etching chamber is formed between the dielectric cover and the studio; a carrier is arranged in the wafer etching chamber and is used to receive the wafer; a coil is wound around the outside of the dielectric cover; an inner cover is arranged in the dielectric cover and is suspended above the carrier, the inner cover is arranged in a cylindrical shape, a plurality of spaced perforations are arranged on the cylinder wall of the inner cover, and a shielding edge extending inwardly is arranged near the bottom of the carrier; a rotating drive member is used to drive the carrier to rotate; a lifting drive member is used to drive the carrier to lift; a wafer inlet and outlet are arranged on the studio, and the carrier is in a low position When the carrier is in a high position, it is directly facing the wafer inlet and outlet to facilitate the wafer access. When the carrier is in a high position, it is close to or in contact with the shielding edge, which can prevent pollutants from entering the studio; the rotary self-cleaning etching device also includes a lifting component, which is arranged on the carrier and is used to lift the inner cover; wherein, a soft metal film is attached to the surface of the inner cover, and the soft metal film can stick to the pollutants generated during the etching process; through the lifting component and the rotating drive component, the inner cover can rotate relative to the dielectric cover, thereby preventing the soft metal film from adhering to the inner cover and the dielectric cover and clogging the perforations; a cleaning member is provided on the outer wall of the inner cover facing the dielectric cover; when the inner cover rotates, the cleaning member acts on the dielectric cover to remove the pollutants attached to the dielectric cover.

[0006] Furthermore, the medium cover includes a cover body and a cover plate, the cover body is arranged in a cylindrical shape, and the cover plate is sealed at one end of the cover body away from the working room; the coil is wound outside the cover; an air inlet is arranged on the cover plate, and the air inlet is connected to the air supply equipment; an air outlet is arranged on the working room, and the air outlet is connected to the exhaust equipment; during the etching process, the gas supply equipment transports etching gas to the wafer etching chamber through the air inlet, and the exhaust equipment extracts unreacted etching gas through the air outlet, thereby maintaining the air pressure in the chamber; after the etching is completed, the gas supply equipment transports clean gas to the wafer etching chamber through the air inlet, and the exhaust equipment extracts the blown pollutants through the air outlet.

[0007] Furthermore, a connecting hole is provided at the top of the working room, the medium cover is provided outside the connecting hole and is sealed and connected to the top wall of the working room; the bottom of the medium cover is open, and the medium cover is connected to the working room through the connecting hole; the inner cover is arranged in a cylindrical shape, and the shielding edge is arranged in a circular ring shape; the inner diameter of the circle formed by the shielding edge is smaller than the aperture of the connecting hole, and the cylinder diameter of the inner cover cylinder is larger than the aperture of the connecting hole; in the non-lifting state, the working room supports the inner cover; in the lifting state, the lifting component can pass through the connecting hole, contact the shielding edge, and lift up the inner cover.

[0008] Furthermore, a movable hole is provided on the carrier; the lifting assembly includes: a lifting member, which can pass through the movable hole and contact the edge of the cover; a lifting driving member, the fixed end of the lifting driving member is connected to the carrier and is arranged under the carrier, and the movable end is connected to the lifting member; the lifting driving member can drive the lifting member to extend from the movable hole so that the lifting member can lift the inner cover.

[0009] Furthermore, a limiting hole is provided on the edge covering, and the supporting member can be inserted into the limiting hole.

[0010] Furthermore, in the non-lifting state, the inner cover is at the top of the working room, and a debris removal channel inclined downward toward the cavity is provided between the top wall of the working room and the shielding edge, and pollutants can be discharged through the debris removal channel.

[0011] Furthermore, the perforations extend vertically, and a plurality of perforations are evenly spaced in the circumferential direction; and / or the width of the perforations tapers radially, and the closer to the medium cover, the greater the width of the perforations, thereby preventing contaminants from adhering to the perforations; and / or the surface of the inner cover is sandblasted to facilitate the attachment of the soft metal film; and / or the soft metal film is an aluminum film.

[0012] Furthermore, the rotary self-cleaning etching device also includes a temperature control mechanism, which is used to maintain the temperature of the dielectric cover and the inner cover so as to reduce the temperature difference between the dielectric cover and the inner cover in a working state and a static state.

[0013] Furthermore, the inner cover includes a first cover portion and a second cover portion that are arranged opposite to each other, and the first cover portion and the second cover portion are both arranged in an arc shape; the rotary self-cleaning etching device includes two groups of lifting components, one group of lifting components is arranged under the first cover portion, used to lift up the first cover portion, and the other group of lifting components is arranged under the second cover portion, used to lift up the second cover portion; the outer walls of the first cover portion and the second cover portion are both provided with cleaning parts; when the first cover portion rotates relative to the second cover portion, the cleaning parts on the outer wall of the first cover portion can clean the inner wall of the second cover portion; when the second cover portion rotates relative to the first cover portion, the cleaning parts on the outer wall of the second cover portion can clean the inner wall of the first cover portion.

[0014] Furthermore, a first inscribed bevel is provided at one end of the first cover portion, and a first circumscribed bevel is provided at the other end; a second circumscribed bevel is provided at one end of the second cover portion, and a second inscribed bevel is provided at the other end; wherein, the first inscribed bevel is adjacent to the second circumscribed bevel, and the first circumscribed bevel is adjacent to the second inscribed bevel; when the first cover portion rotates, the first circumscribed bevel can move along the second inscribed bevel to facilitate the first cover portion to cut into the second cover portion; when the second cover portion rotates, the second circumscribed bevel can move along the first inscribed bevel to facilitate the second cover portion to cut into the first cover portion.

[0015] The present application provides a rotary self-cleaning etching device, comprising a studio, a dielectric cover, a stage, a stage, a coil, an inner cover, a rotary drive, a lifting drive and a lifting assembly, wherein a wafer etching chamber is formed between the dielectric cover and the studio, the inner cover is arranged in the dielectric cover and suspended above the stage; a shielding edge is arranged at the bottom of the inner cover, which can prevent pollutants from entering the studio; a soft metal film is attached to the surface of the inner cover, which can reliably and efficiently capture pollutants generated during the etching process, thereby ensuring the cleanliness of the etching environment and the effect of wafer surface treatment; the stage is driven to rotate by the rotary drive, which can improve the uniformity of coating and etching; the lifting assembly enables the inner cover to rotate with the stage, which can not only avoid the inner cover and the dielectric cover from being adhered and the perforations from being blocked, but also can throw off pollutants with poor adhesion, thereby further ensuring the cleanliness of the environment in the chamber; a cleaning member is arranged on the outer wall of the inner cover, and the dielectric cover is cleaned by the cleaning member through rotation, and the chamber wall can be self-cleaned, reducing the need for downtime and unpacking, thereby better extending the maintenance cycle of the etching chamber and improving the operation efficiency of the equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 A schematic diagram of the structure of a rotary self-cleaning etching device provided in this application;

[0017] Figure 2 for Figure 1 Enlarged view of the structure of the middle lifting assembly 400

[0018] Figure 3 for Figure 1A structural cross-sectional view of the rotary self-cleaning etching device shown;

[0019] Figure 4 A schematic diagram of the structure of another rotary self-cleaning etching device provided in the present application;

[0020] Figure 5 A schematic structural diagram of an inner cover provided in this application. DETAILED DESCRIPTION

[0021] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0022] The present application provides a rotary self-cleaning etching device, comprising: a studio 110 and a dielectric cover 120, wherein the dielectric cover 120 is disposed on the studio 110 and connected to the studio 110, and a wafer etching chamber is formed between the dielectric cover 120 and the studio 110; a carrier 130 is disposed in the wafer etching chamber and is used to receive a wafer; and a coil 140 is wound around the outside of the dielectric cover 120.

[0023] For details, please refer to Figure 1 and Figure 3 In the illustrated embodiment, the dielectric cover 120 is disposed on the top of the studio 110, and the carrier 130 is located in the studio 110. A wafer inlet and outlet 111 is disposed on one side of the studio 110, and a loading and unloading mechanism such as a robot can transfer wafers to the carrier 130 through the wafer inlet and outlet.

[0024] Continue to refer to Figure 1 and Figure 3 A communication hole is provided at the top of the studio 110, and the medium cover 120 is disposed outside the communication hole and is sealed and connected to the top wall of the studio 110. The medium cover 120 is configured to be cylindrical; along the vertical direction, the upper end of the medium cover 120 is closed and the lower end is open; the diameter of the medium cover 120 is larger than the diameter of the communication hole, and the medium cover 120 can completely cover the communication hole.

[0025] Continue to refer to Figure 1 and Figure 3 A coil 140 is wound around the dielectric cover 120, and the coil 140 spirally extends around the dielectric cover 120 in the vertical direction. The dielectric cover 120 serves as a dielectric window and can be made of materials such as ceramics and quartz. When working, the alternating magnetic field generated by the radio frequency current in the coil 140 can penetrate the dielectric window and act on the etching gas, thereby stimulating gas discharge, accelerating electron movement, and promoting plasma generation.

[0026] More specifically, the coil 140 is connected to a first RF power source, and the first RF power source is used to supply power to the coil 140. When in operation, the coil 140 is powered on, generates a glow discharge, and can ionize the etching gas to generate plasma.

[0027] More specifically, the carrier 130 is connected to a second RF power source, which is used to supply power to the carrier 130. When the carrier 130 is powered on, the RF energy induces a bias voltage, and generates a negative bias potential, which can attract positive ions to accelerate toward the carrier 130, so as to facilitate etching of the wafer to remove surface materials.

[0028] Furthermore, the etching device provided in the present application also includes: a rotating driving member 310 for driving the carrier 130 to rotate; and a lifting driving member 320 for driving the carrier 130 to lift and lower.

[0029] The rotary drive member 310 may be a rotary cylinder, an electric motor, or the like.

[0030] In one embodiment, during the wafer etching process, the rotary driving member 310 drives the stage 130 to rotate at a constant speed, which is beneficial to improving the etching uniformity.

[0031] In another embodiment, during the coating process of the inner cover 200 (described in detail below), the rotary drive member 310 drives the carrier 130 to rotate at a constant speed, which is conducive to the uniform and comprehensive attachment of the soft metal film to the inner cover 200 .

[0032] The lifting drive member 320 can be an electric cylinder, a linear module, etc.

[0033] The lifting drive 320 is used to drive the stage 130 to and from the low position and the high position. When the stage 130 is in the low position, it faces the wafer inlet and outlet 111 to facilitate the wafer access; after the wafer to be etched is in place, the lifting drive 320 drives the stage 130 to rise and approach the inner cover 200; when the stage 130 is in the high position, it approaches or contacts the shielding edge 201, which can prevent contaminants from entering the working room 110.

[0034] For details, please refer to Figure 1 In the illustrated embodiment, the fixed end of the rotary drive member 310 is disposed below the working chamber 110, and the movable end extends into the wafer etching chamber and is connected to the stage 130. The external rotary drive member 310 is convenient for installation and maintenance.

[0035] Continue to refer to Figure 1 The lifting drive member 320 is arranged on one side of the rotating drive member 310 , the fixed end of the lifting drive member 320 is arranged below the working room 110 , and the movable end is connected to the rotating drive member 310 .

[0036] To ensure the sealing of the wafer etching chamber, the fixed end of the rotary drive member 310 is sealed and connected to the working chamber 110 via the magnetic fluid 150; the magnetic fluid 150 can adapt to both lifting and rotating movements while ensuring a sealed connection.

[0037] Continue to refer to Figure 1 , three groups of ejector pins 160 are also arranged in the studio 110, and the three groups of ejector pins 160 are evenly spaced along the circumferential direction. Three groups of vertically penetrating ejector pin holes are opened in the middle of the carrier 130, and the three groups of ejector pin holes are evenly spaced along the same circumferential direction. A group of ejector pins 160 are slidably arranged in any ejector pin hole. When the carrier 130 is in a low position, the ejector pins 160 pass through the through hole to cooperate with the loading and unloading mechanism to receive the wafer; the loading and unloading mechanism descends to make the wafer fall on the ejector pins 160; after the loading and unloading mechanism leaves, the lifting drive 320 drives the carrier 130 to rise, and the carrier 130 can lift the wafer, so that the wafer is close to the dielectric cover 120 and the area surrounded by the coil 140, so that the wafer can be etched by plasma. After etching is completed, the lifting drive 320 drives the carrier 130 to descend, and the ejector pins 160 pass through the through hole again, and can support the wafer again, so that the loading and unloading mechanism can take the wafer away by rising.

[0038] Furthermore, the etching device provided in the present application also includes: an inner cover 200, which is arranged in the medium cover 120 and suspended above the carrier 130, the inner cover 200 is arranged in a cylindrical shape, and a plurality of spaced perforations 202 are provided on the cylinder wall of the inner cover 200, and a shielding edge 201 extending inward is provided near the bottom of the carrier 130 of the inner cover 200; a lifting assembly 400, which is arranged on the carrier 130 and is used to lift the inner cover 200.

[0039] For details, please refer to Figure 1 and Figure 3 In the illustrated embodiment, the dielectric cover 120 cooperates with the inner cover 200 to form a double-layer cover structure that is disposed on the top of the working chamber 110. The inner cover 200 is provided with a through hole 202, which forms an effective partition to facilitate the coupling of the RF energy of the coil 140 into the wafer etching chamber.

[0040] The surface of the inner cover 200 is attached with a soft metal film, and the soft metal film can adhere to pollutants generated during the etching process.

[0041] It should be explained that, since the soft metal film is soft and has strong adhesion to particles, the pollutants generated by etching can be captured by the soft metal film when they are close to the inner cover 200 during movement, thereby effectively reducing the pollutants in the wafer etching chamber and inhibiting the pollutants from falling, thereby improving the cleanliness of the wafer surface. At the same time, since the soft metal film can reliably capture and fix a large amount of pollutants, it is beneficial to extend the maintenance cycle of the wafer etching chamber and improve the operating efficiency of the equipment.

[0042] In addition, the perforations 202 on the inner cover 200 can also prevent the soft metal film from sticking together; in this way, on the one hand, the soft metal film can be prevented from forming a large-scale shielding and interfering with the coupling of RF energy; on the other hand, the risk of the soft metal film and the pollutants captured therein falling off due to large-scale mutual involvement can be reduced.

[0043] Common soft metals include aluminum, lead, tin, titanium, etc. In a specific embodiment, the soft metal film is an aluminum film.

[0044] In order to facilitate the attachment of the soft metal film to the surface of the inner cover 200 and ensure that the soft metal film has good adhesion, in one embodiment, the attachment of the soft metal film includes the following steps:

[0045] The wafer with the soft metal film deposited on the surface is sent into the wafer etching chamber;

[0046] By etching out the soft metal film on the wafer, the soft metal film is attached to the inner cover 200 by non-directional splashing.

[0047] For the convenience of explanation, the above-mentioned "wafer with a soft metal film deposited on the surface" is called a preparatory sheet. The preparatory sheet can be obtained by depositing a soft metal film on an ordinary wafer through a coating method such as magnetron sputtering, or by directly making the soft metal into the shape of a wafer. The preparatory sheet has a similar shape to the wafer, and can be easily circulated in the wafer production line and undergo surface treatment.

[0048] The coating procedure of the inner cover 200 is similar to the normal wafer etching process. The preparatory sheet is sent into the working room 110. After the carrier 130 receives the preparatory sheet, the etching device enters the working state, the coil 140 is energized to generate radio frequency energy, the working room 110 is ventilated, the etching gas is ionized, and the ions bombard the preparatory sheet, blasting out the soft metal film on the surface of the preparatory sheet. The blasted soft metal film will move toward the inner cover 200 and finally adhere to the inner cover 200.

[0049] Since the movement direction of the soft metal film blasted out during the etching process is uncertain, continuing to etch the preparation sheet for a certain period of time can effectively ensure the comprehensiveness of the coating of the inner cover 200.

[0050] To ensure the coating effect of the inner cover 200, the thickness of the soft metal film deposited on the surface of the preparation sheet is greater than 1 μm, and the etching time in the coating stage is not less than 200 seconds.

[0051] In a specific embodiment, a layer of metal aluminum film with a thickness of about 5 μm is deposited on the surface of an ordinary wafer by using a magnetron sputtering device. Then, the prepared wafer is transferred to the working room 110. The etching device enters the working state, and argon gas with a flow rate of 10 sccm is introduced into the wafer etching chamber, and the coil 140 is powered by the first RF power supply, and the carrier 130 is powered by the second RF power supply, so as to ionize the argon gas and attract the Ar. + Bombard the prepared film on the carrier 130; after etching for 300 seconds, turn off the power, stop the gas flow, and take out the prepared film; at this time, the surface of the inner cover 200 is covered with a layer of aluminum film, which is soft and has excellent adhesion because it is newly coated. It can effectively capture and fix pollutants and prevent pollutants from contaminating the etching environment.

[0052] It is easy to understand that after running for a period of time, the soft metal film originally attached to the inner cover 200 will reduce or lose the ability to capture newly generated pollutants due to the adhesion of a large amount of pollutants.

[0053] To this end, the etching method provided in the present application also includes a re-coating stage: after the etching device has normally etched the wafer for a certain number of times or for a certain period of time, the wafer with a soft metal film deposited on the surface is again sent into the wafer etching chamber, and the steps of the above-mentioned coating stage are repeated to re-coat the inner cover 200.

[0054] In a specific embodiment, when the etching process times reaches 100 times, the preparatory sheet with a layer of metal aluminum film about 5 μm thick deposited on the surface is transferred to the studio 110 again, and argon gas with a flow rate of 10 sccm is introduced into the wafer etching chamber. The coil 140 is powered by a first RF power supply with a power of 800 W, and the carrier 120 is powered by a second RF power supply with a power of 500 W. The etching is performed for 300 seconds to cover the inner cover 200 and the dielectric cover 120 with a new layer of aluminum film.

[0055] Reattaching the film can maintain the ability of the inner cover 200 to capture pollutants. While optimizing the wafer etching process and ensuring the cleanliness of the wafer surface, it further extends the maintenance cycle of the etching chamber and improves the operating efficiency of the equipment.

[0056] Continue to refer to Figure 1 , the lifting assembly 400 is connected to the carrier 130 and is disposed in the wafer etching chamber. The lifting assembly 400 can be any component that can lift the inner cover 200, such as a lifting shaft, a lever, a seesaw, etc. In the non-lifting state, the lifting assembly 400 is away from the inner cover 200; in the lifting state, the lifting assembly 400 can contact and lift the inner cover 200, so that the inner cover 200 is entrusted above the carrier 130 and is indirectly connected to the carrier 130. In this way, when the carrier 130 is driven by the rotating drive member 310 to rotate, it can drive the inner cover 200 to rotate accordingly.

[0057] During the etching process, in order to prevent contaminants from being deposited downward and entering the working room 110, the lifting drive 320 is often used to drive the stage 130 up until the wafer and the edge shield 201 are against each other; the edge shield 201 is used to cover the edge of the wafer, which neither blocks the main etching part of the wafer nor fixes the wafer to ensure the position stability of the wafer during the etching process.

[0058] When the wafer and the edge mask 201 are against each other, the two are easily stuck together after etching. If the stickiness is not released, the carrier 130 will descend and the wafer will be easily damaged due to separation from the carrier 130.

[0059] Therefore, if the wafer is stuck to the edge shield 201 , the stage 130 can be rotated by the rotary drive 310 to deflect the wafer and release the wafer from the edge shield 201 .

[0060] If the outer diameter of the wafer is smaller than the inner diameter of the circle formed by the edge shield 201, the wafer can be completely exposed under the coil 140 during the etching process. At this time, the carrier 130 can be abutted against the edge shield 201 to ensure the shielding effect of the edge shield 201. If the carrier 130 and the edge shield 201 are stuck together, the inner cover 200 can be lifted up by the lifting assembly 400 to release the adhesion between the carrier 130 and the edge shield 201.

[0061] Since the inner cover 200 is provided with a perforation 202, the blasted soft metal film may pass through the perforation 202 and adhere to the dielectric cover 120 during the non-directional movement. If the soft metal film adheres near the perforation 202, it may also adhere to the inner cover 200 and the dielectric cover 120 and block the perforation 202, resulting in the problem of sticky conductivity and ultimately affecting the coupling of the RF energy of the coil 140.

[0062] The inner cover 200 can rotate relative to the dielectric cover 120 through the lifting assembly 400 and the rotating driving member 310 , thereby preventing the soft metal film from adhering to the inner cover 200 and the dielectric cover 120 and blocking the through hole 202 .

[0063] For example, during the coating process of the inner cover 200 , the lifting assembly 400 lifts up the inner cover 200 , and the rotary drive member 310 drives the carrier 130 and the inner cover 200 to rotate at a constant speed, which can effectively prevent the ejected soft metal film from passing through the through hole 202 .

[0064] For another example, after the inner cover 200 is coated, the lifting assembly 400 lifts up the inner cover 200, and the rotating driving component 310 drives the carrier 130 to rotate the inner cover 200 to a certain angle, thereby ensuring that the inner cover 200 and the dielectric cover 120 are not bonded by the soft metal film; the perforation 202 is rotated to the position originally blocked by the wall of the inner cover 200, and the perforation 202 can be effectively prevented from being blocked by the accumulated soft metal film.

[0065] As the number of etchings increases, after the soft metal film captures a large amount of pollutants, the soft metal film may also adhere to the inner cover 200 and the dielectric cover 120, blocking the through-hole 202. Therefore, after the etching device etches the wafer normally for a certain number of times or for a certain period of time, the inner cover 200 can be lifted up by the lifting assembly 400, and the rotary drive member 310 can drive the stage 130 and the inner cover 200 to rotate a certain angle to solve the problem of the soft metal film being adhered and ensure that the through-hole 202 is unobstructed.

[0066] Furthermore, a cleaning member is provided on the outer wall of the inner cover 200 facing the medium cover 120 ; when the inner cover 200 rotates, the cleaning member acts on the medium cover 120 and can remove pollutants attached to the medium cover 120 .

[0067] The cleaning member may be any member capable of cleaning the wall surface, such as a brush, a rubber strip, a flexible scraper, etc.

[0068] In one embodiment, after the inner cover 200 is coated, the lifting assembly 400 lifts up the inner cover 200, and the rotating driving component 310 drives the carrier 130 to carry the inner cover 200 to rotate a certain angle, and the cleaning component can completely sweep the medium cover 120 and remove the soft metal film adhered to the medium cover 120, thereby effectively preventing the soft metal film from adhering to the inner cover 200 and the medium cover 120 and clogging the perforation 202.

[0069] In another embodiment, after the etching device etches the wafer normally for a certain number of times or for a certain period of time, the lifting assembly 400 lifts up the inner cover 200 and the rotating driving component 310 drives the carrier 130 and the inner cover 200 to rotate a certain angle, so that the cleaning component can clean the soft metal film, impurities, dust and other pollutants adhered to the medium cover 120.

[0070] The swept contaminants can be drawn out of the wafer etching chamber through air flow.

[0071] In addition, when the inner cover 200 rotates, the soft metal film attached to the inner cover 200 and the pollutants adhered thereto will perform centrifugal motion; in this process, the part with poor adhesion effect is easily thrown off and then pulled out, and the remaining part must have reliable adhesion, thereby ensuring the cleanliness of the environment in the cavity.

[0072] In summary, the rotary self-cleaning etching device provided by the present application can reliably and efficiently capture pollutants generated during the etching process through the inner cover 200 with a soft metal film on the surface, thereby ensuring the cleanliness of the etching environment and the effect of wafer surface treatment; through the soft metal film, it can reliably capture and fix pollutants in large quantities, thereby extending the maintenance cycle of the etching chamber and improving the operating efficiency of the equipment; the rotating drive member 310 drives the carrier 130 to rotate, thereby improving the uniformity of coating and etching; the lifting assembly 400 enables the inner cover 200 to rotate with the carrier 130, which not only avoids the inner cover 200 and the medium cover 120 from sticking and the perforation 202 from being blocked, but also can throw off pollutants with poor adhesion, further ensuring the cleanliness of the environment in the cavity; by rotating the cleaning member to clean the medium cover 120, it can also achieve self-cleaning of the cavity wall and reduce the need for shutdown and unpacking.

[0073] In one embodiment, the medium cover 120 includes a cover body 121 and a cover plate 122, the cover body 121 is arranged in a cylindrical shape, and the cover plate 122 is sealed and arranged at one end of the cover body 121 away from the working room 110; the coil 140 is wound outside the cover body 121; an air inlet is provided on the cover plate 122, and the air inlet is connected to a gas supply device; an air outlet is provided on the working room 110, and the air outlet is connected to a gas extraction device; during the etching process, the gas supply device transports etching gas to the wafer etching chamber through the air inlet, and the gas extraction device extracts unreacted etching gas through the air outlet, thereby maintaining the air pressure in the chamber; after the etching is completed, the gas supply device transports clean gas to the wafer etching chamber through the air inlet, and the gas extraction device extracts the blown pollutants through the air outlet.

[0074] The etching gas and the cleaning gas may be the same gas or different gases.

[0075] For details, please refer to Figure 4 In the illustrated embodiment, the cover 121 is provided in a cylindrical shape with open ends, and the cover plate 122 is provided in a circular plate shape. The cover plate 122 covers the upper end of the cover 121, and a sealing ring is provided between the two. The cover 121 is made of a dielectric material (such as ceramics, quartz) that facilitates energy coupling, and the coil 140 is vertically spirally wound outside the cover 121.

[0076] The air inlet of the wafer etching chamber is arranged on the cover plate 122 . During the etching process, the etching gas used for reaction can be directly blown to the area surrounded by the coil 140 , thereby ensuring the ionization effect.

[0077] Continue to refer to Figure 4 The gas outlet of the wafer etching chamber is arranged at the lower part of the side wall of the working room 110 close to the bottom wall.

[0078] The air inlet is arranged at the top and the air outlet is arranged at the bottom. During the cleaning process, the carrier 130 is in a low position, and the cleaning gas blown from top to bottom can well blow the free pollutants to the air outlet, thereby ensuring the cleaning effect in the cavity.

[0079] To facilitate the installation of the inner cover 200, in one embodiment, a connecting hole is opened on the top of the working room 110, and the medium cover 120 is arranged outside the connecting hole and is sealed and connected to the top wall of the working room 110; the bottom of the medium cover 120 is open, and the medium cover 120 is connected to the working room 110 through the connecting hole; the inner cover 200 is arranged in a cylindrical shape, and the shielding edge 201 is arranged in a circular ring shape; the inner diameter of the circle formed by the shielding edge 201 is smaller than the aperture of the connecting hole, and the diameter of the cylinder of the inner cover 200 is larger than the aperture of the connecting hole; in the non-lifting state, the working room 110 supports the inner cover 200; in the lifting state, the lifting assembly 400 can pass through the connecting hole, contact the shielding edge 201, and lift the inner cover 200.

[0080] For details, please refer to Figure 1 and Figure 3 In the illustrated embodiment, a circular connecting hole is opened in the center of the top of the working room 110, and the aperture of the connecting hole is smaller than the cylinder diameter of the medium cover 120; the medium cover 120 is arranged on the top of the working room 110 and completely covers the connecting hole; a sealing ring is provided between the medium cover 120 and the working room 110.

[0081] Continue to refer to Figure 1 and Figure 3 The inner cover 200 includes a cylindrical body and a shielding edge 201, and the shielding edge 201 is arranged at the bottom end of the cylindrical body. The diameter of the cylindrical body is larger than the aperture of the connecting hole, and the inner cover 200 is arranged on the top of the studio 110; the shielding edge 201 is arranged in a circular ring shape, and the inner diameter of the shielding edge 201 is smaller than the aperture of the connecting hole, and part of the shielding edge 201 is exposed in the connecting hole; the outer diameter of the carrier 130 is larger than the inner diameter of the shielding edge 201; when the carrier 130 is in a high position, it can approach or even contact the shielding edge 201 through the connecting hole, and the shielding edge 201 can block the gap between the connecting hole and the carrier 130, thereby preventing pollutants from being deposited downward into the studio 110.

[0082] The inner cover 200 is confined in the medium cover 120 and is freely seated on the top of the working room 110. Its position is stable and it is convenient to perform lifting and lowering movements.

[0083] Optionally, a card slot is provided on the outer top wall of the working room 110, and the card slot is arranged around the connecting hole, and the inner cover 200 is confined in the card slot.

[0084] For details, please refer to Figure 4In the illustrated embodiment, the bottom ends of the medium cover 120 and the inner cover 200 are both in the slot. The plug-in connection can not only limit the installation position of the medium cover 120 and the inner cover 200, facilitate assembly, and improve assembly accuracy, but also play a certain guiding and limiting role, facilitate the lifting and resetting of the inner cover 200, and improve the sealing of the connection position.

[0085] In other implementations, the inner cover 200 may be slidably disposed on the medium cover 120 , or may be suspended in the medium cover 120 in an overlapping manner.

[0086] The present application does not limit the specific installation method of the inner cover 200.

[0087] In one embodiment, a movable hole is provided on the carrier 130; the lifting assembly 400 includes: a lifting member 410, which can pass through the movable hole and contact the cover edge 201; a lifting driving member 420, the fixed end of the lifting driving member 420 is connected to the carrier 130 and is arranged below the carrier 130, and the movable end is connected to the lifting member 410; the lifting driving member 420 can drive the lifting member 410 to extend from the movable hole, so that the lifting member 410 can lift the inner cover 200.

[0088] The supporting member 410 may be a plate, a block, a rod, or any other structure capable of supporting the inner cover 200. The lifting driving member 420 may be a cylinder, an electric cylinder, or any other structure capable of driving the supporting member 410 to move up and down.

[0089] For details, please refer to Figure 1 and Figure 2 In the illustrated embodiment, the lifting drive member 420 adopts a small cylinder, and the fixed end of the lifting drive member 420 is fixedly arranged below the carrier 130 through the first mounting plate 431; the movable end of the lifting drive member 420 is provided with an arc-shaped second mounting plate 432, and the second mounting plate 432 is provided with a plurality of lifting members 410 spaced apart along the circumferential direction. The additional lifting members 410 are conducive to the lifting assembly 400 to lift the entire inner cover 200 steadily.

[0090] Combined with reference Figure 3 The carrier 130 is provided with a plurality of through holes, which are arranged at intervals along the circumferential direction, and a top holding member 410 is inserted in any through hole.

[0091] When the supporting member 410 is not needed to lift the inner cover 200, the supporting member 410 is stored in the through hole and away from the shielding edge 201, so as to prevent the movement of the carrier 130 from affecting the inner cover 200. When the inner cover 200 needs to rotate, the lifting driving member 420 drives the supporting member 410 to rise, and the top of the supporting member 410 passes through the through hole and can contact and lift the shielding edge 201, so that the carrier 130 can drive the inner cover 200 to move.

[0092] Optionally, a limiting hole is provided on the edge covering 201, and the supporting member 410 can be inserted into the limiting hole.

[0093] The limiting hole may be a through hole that vertically penetrates the edge shielding 201 , or may be a groove that is disposed on the side of the edge shielding 201 that faces the carrier 130 .

[0094] The limiting hole for the lifting member 410 to be inserted can ensure that the rotational force is accurately and completely transmitted to the inner cover 200 so that the inner cover 200 can rotate synchronously with the carrier 130, and can also prevent the inner cover 200 from slipping or shifting during the lifting and rotation process.

[0095] When the limiting hole is a through hole, the supporting member 410 is set to be a cone with an outer diameter gradually increasing from top to bottom. The top outer diameter of the supporting member 410 is small to facilitate insertion into the limiting hole. As the supporting member 410 continues to rise, when the outer diameter of the supporting member 410 is larger than the aperture of the limiting hole, the supporting member 410 can reliably support the inner cover 200.

[0096] Optionally, in the non-lifting state, the inner cover 200 is at the top of the working room 110 ; an impurity removal channel 203 inclined downward toward the cavity is provided between the top wall of the working room 110 and the shielding edge 201 , and pollutants can be discharged through the impurity removal channel 203 .

[0097] For details, please refer to Figure 4 In the illustrated embodiment, the inner cover 200 is naturally located in the slot at the top of the working room 110 under the influence of its own weight and surrounds the connecting hole. A plurality of impurity removal channels 203 are provided on the bottom wall of the slot, and the plurality of impurity removal channels 203 are spaced apart in the circumferential direction. From the outside to the inside (from the edge of the cavity to the center of the cavity), any impurity removal channel 203 extends downwardly in an inclined manner; the inner cover 200 is spaced apart from the medium cover 120, and one end of the impurity removal channel 203 points to the medium cover 120 and connects the interval between the inner cover 200 and the medium cover 120, and the other end points to the center of the cavity and connects to the connecting hole at the top of the working room 110.

[0098] The impurity removal channel 203 is similar to a slide pointing to the center of the cavity; the pollutants removed from the inner wall of the medium cover 120 and the pollutants between the inner cover 200 and the medium cover 120 can be discharged into the center of the cavity along the impurity removal channel 203 when they fall to the bottom, pass through the connecting hole, enter the working room 110, and then be extracted.

[0099] In other embodiments, the impurity removal channel 203 may also be an upper concave hole groove provided on the back of the cover 201 facing the working chamber 110. The present application does not limit the specific configuration of the impurity removal channel 203, as long as it can facilitate the flow of pollutants between the inner cover 200 and the medium cover 120.

[0100] Optionally, the inner cover 200 is made of metal material.

[0101] For example, the inner cover 200 is made of the same soft metal material as the soft metal film, which not only facilitates the processing and forming of the inner cover 200, but also facilitates the attachment of the soft metal film.

[0102] In one embodiment, the soft metal film is an aluminum film, and the inner cover 200 is made of metal aluminum.

[0103] Optionally, the through-holes 202 extend vertically, and a plurality of through-holes 202 are distributed at equal intervals along the circumferential direction.

[0104] For details, please refer to Figure 1 and Figure 5 In the illustrated embodiment, a plurality of perforations 202 are densely distributed on the circular cylindrical wall of the inner cover 200, any perforation 202 is extended in the vertical direction, and a plurality of perforations 202 are spaced apart in the circumferential direction, so that the outer shape of the inner cover 200 is similar to that of a bird cage.

[0105] Continue to refer to Figure 1 , the coil 140 spirally extends in the vertical direction. The vertically extending perforations 202 can facilitate the entry of radio frequency energy and ensure the comprehensiveness of radio frequency energy coverage. By reducing the width of the perforations 202 and / or reducing the spacing between adjacent perforations 202, the number of perforations 202 can be increased on a limited cylinder wall. The dense distribution of perforations 202 with a large number and small width can not only ensure the structural strength of the inner cover 200, but also increase the coverage range of radio frequency energy, and further improve the comprehensiveness of radio frequency energy coverage.

[0106] Optionally, the width of the through hole 202 tapers radially, and the closer to the medium cover 120 , the larger the width of the through hole 202 , so as to prevent contaminants from being bonded in the through hole 202 .

[0107] For details, please refer to Figure 1 or Figure 5 In the illustrated embodiment, the radial direction of the inner cover 200 is the length direction of the through hole 202, and the circumferential direction is the width direction of the through hole 202; the farther away from the dielectric cover 120 along the radial direction, the smaller the width of the through hole 202.

[0108] When the inner cover 200 is coated with a film by etching the preparation sheet, the etched soft metal film moves from the center of the cavity to the cavity wall; part of the soft metal film can pass through the through hole 202 and move toward the dielectric cover 120. From the inside to the outside, the width of the through hole 202 gradually increases, and the soft metal film entering the through hole 202 is not easy to stick to the hole wall of the through hole 202. Therefore, it can be prevented that the soft metal film sticks to the through hole 202 to form a piece, and finally blocks the through hole 202 and hinders the input of radio frequency energy.

[0109] In one embodiment, the width of the through hole 202 at the outer side of the inner cover 200 close to the medium cover 120 is 3 mm, and the width of the through hole 202 at the inner side of the inner cover 200 away from the medium cover 120 is 2 mm.

[0110] Optionally, the diameter of the inner cover 200 is smaller than the diameter of the medium cover 120 , and the inner cover 200 and the medium cover 120 are spaced apart.

[0111] The inner cover 200 is spaced from the dielectric cover 120, and when the inner cover 200 is coated with a film by etching the preparation sheet, the soft metal film passing through the through hole 202 and moving toward the dielectric cover 120 is not easy to adhere to and accumulate at the corner of the through hole 202. Therefore, it is also possible to prevent the soft metal film from sticking to the through hole 202, eventually blocking the through hole 202 and hindering the input of radio frequency energy, thereby maintaining the open state of the through hole 202.

[0112] Optionally, the surface of the inner cover 200 is sandblasted to facilitate the attachment of the soft metal film.

[0113] Sandblasting can increase the surface roughness of the inner cover 200, thereby facilitating the attachment of the soft metal film and improving the firmness of the attachment of the soft metal film, and can also increase the contact area between the inner cover 200 and the soft metal film, further optimizing the capture effect of the soft metal film on particles.

[0114] In one embodiment, the inner cover 200 is made of metal aluminum, and after sandblasting, the surface roughness of the inner cover 200 is 6-12 μm.

[0115] Optionally, the rotary self-cleaning etching device provided in the present application further includes a temperature control mechanism, which is used to maintain the temperature of the dielectric cover 120 and the inner cover 200 so as to reduce the temperature difference between the dielectric cover 120 and the inner cover 200 in the working state and the static state.

[0116] It needs to be explained that, in the working state, the etching device etches the wafer by powering on and ventilating; in the static state, the etching device is not powered on and ventilated.

[0117] It is easy to understand that in the working state, the etching device will heat up, so that the dielectric cover 120 and the inner cover 200 have a certain temperature; but in the static state, since the etching device no longer generates heat, the dielectric cover 120 and the inner cover 200 will cool down. In the process of continuous etching of the wafer, the etching device will continuously switch between the working state and the static state, resulting in the dielectric cover 120 and the inner cover 200 continuously changing temperature. This alternation of hot and cold will cause the contaminants to repeatedly expand due to heat and contract due to cooling, eventually causing the contaminants to fall off.

[0118] Therefore, a temperature control mechanism is added to maintain the temperature of the medium cover 120 and the inner cover 200. When the temperature difference between the medium cover 120 and the inner cover 200 in different states is less than a preset value or even close to zero, the pollutants are less affected by the temperature change, and the pollutants adhered to the medium cover 120 and the inner cover 200 are not easy to fall off actively.

[0119] In one embodiment, the temperature control mechanism uses a heating lamp.

[0120] For details, please refer to Figure 1 In the illustrated embodiment, the etching device provided by the present application further includes a cover 170, which is covered on the working room 110, and the dielectric cover 120 and the coil 140 are located in the cover 170; the cover 170 and the working room 110 are made of metal materials and are grounded; the cover 170 can not only hide and protect the dielectric cover 120, the coil 140 and other structures, but also play a role in conductive protection. The heating lamp is suspended in the cover 170 and suspended above the dielectric cover 120.

[0121] In a specific embodiment, before etching, the heating lamp is powered on, the input power is 200W, and it works for 5 minutes. The temperature of the dielectric cover 120 and the inner cover 200 is maintained at 70°C~80°C; the etching device enters the working state, starts etching, and reduces the power of the heating lamp to 100W until the preparation wafer or ordinary wafer is completely etched; the etching device enters the static state, and the power of the heating lamp is restored to 200W.

[0122] In another embodiment, the temperature control mechanism uses a water cooling tube, and cooling water flows through the water cooling tube, which can achieve low temperature maintenance of the etching chamber.

[0123] For details, please refer to Figure 1 In the illustrated embodiment, a cover shell 170 is provided on the working room 110, and a water cooling pipe is arranged in the cover shell 170 to form a circulation pipeline; the water cooling pipe is close to or in contact with the medium cover 120 and the inner cover 200, and can maintain the temperature of the medium cover 120 and the inner cover 200 by heat exchange.

[0124] Different from temperature control mechanisms that directly heat by lamps, heating rods, etc., the temperature of cooling water is more controllable, especially in maintaining low temperatures, and cooling water can achieve better results.

[0125] In a specific embodiment, an etching process of a silicon nitride wafer is performed; at this time, the etching chamber needs to be cooled during the etching process, and the etching efficiency and etching reliability of silicon nitride need to be improved by maintaining low temperature. By passing 25°C cooling water into the water cooling pipe to ensure constant temperature cooling water circulation, the low temperature of the dielectric cover 120 and the inner cover 200 can be maintained, and the working chamber 110 and its internal environment can be further cooled through the dielectric cover 120 and the inner cover 200.

[0126] This application does not limit the specific configuration of the temperature control mechanism.

[0127] After long-term use, a large amount of pollutants will adhere to the inner wall of the inner cover 200. If the coating is repeated continuously, multiple layers of soft metal films with pollutants adhered to them will be stacked on the inner cover 200.

[0128] The continuous thickening of the soft metal film is easy to cause it to fall off, and it also affects the freedom of the plasma in the area surrounded by the coil 140. For this reason, the inner cover 200 needs to be cleaned on time or as needed.

[0129] In order to reduce the number of times the cavity is opened for cleaning, in one embodiment, the inner cover 200 includes a first cover portion 210 and a second cover portion 220 that are arranged opposite to each other, and the first cover portion 210 and the second cover portion 220 are both arranged in an arc shape; the rotary self-cleaning etching device includes two groups of lifting components 400, one group of lifting components 400 is arranged below the first cover portion 210 and is used to lift up the first cover portion 210, and the other group of lifting components 400 is arranged below the second cover portion 220 and is used to lift up the second cover portion 220; the outer walls of the first cover portion 210 and the second cover portion 220 are both provided with cleaning parts; when the first cover portion 210 rotates relative to the second cover portion 220, the cleaning parts on the outer wall of the first cover portion 210 can clean the inner wall of the second cover portion 220; when the second cover portion 220 rotates relative to the first cover portion 210, the cleaning parts on the outer wall of the second cover portion 220 can clean the inner wall of the first cover portion 210.

[0130] For details, please refer to Figure 1 and Figure 5 In the illustrated embodiment, the first cover portion 210 and the second cover portion 220 are both arranged in a semicircular shape and centrally symmetrically. The outer walls of the first cover portion 210 and the second cover portion 220 facing the medium cover 10 are both provided with cleaning members.

[0131] After the etching device etches the wafer normally for a certain number of times or for a certain period of time, the first cover part 210 is lifted up by the first lifting assembly 400, and the rotary drive member 310 drives the carrier 130 to rotate 360°. The cleaning member on the first cover part 210 can sweep the inner wall of the medium cover 120 opposite to its position and the inner wall of the second cover part 220; after the first cover part 210 returns to the initial position, the rotary drive member 310 stops working, the first lifting assembly 400 is restored, and the first cover part 210 is The second cover 210 returns to the non-lifting state; the second lifting assembly 400 lifts the second cover 220, and the rotary drive 310 drives the carrier 130 to rotate 360° again. The cleaning elements on the second cover 220 can sweep the inner wall of the medium cover 120 corresponding to its position and the inner wall of the first cover 210; after the second cover 220 returns to the initial position, the rotary drive 310 stops working, the second lifting assembly 400 is restored, and the second cover 220 returns to the non-lifting state. In this way, the inner cover 200 is cleaned once.

[0132] By providing the first cover part 210 and the second cover part 220, and enabling the first cover part 210 and the second cover part 220 to independently rotate in conjunction with the carrier 130 driven by the corresponding lifting assembly 400, the cleaning targets are increased and the cleaning contents are optimized, which can further extend the maintenance period of the etching chamber and improve the operating efficiency of the equipment.

[0133] When actually cleaning the wafer etching chamber, the first cover part 210 and the second cover part 220 can be lifted up at the same time through two sets of lifting assemblies 400, and rotate synchronously with the carrier 130, so that the first cover part 210 and the second cover part 220 can comprehensively clean the inner wall of the medium cover 120, and then the inner wall of the inner cover 200 can be comprehensively cleaned by independently rotating the first cover part 210 and the second cover part 220.

[0134] In order to facilitate the outer wall of the first cover part 210 to cut into the inner wall of the second cover part 220 during the rotation process, and the outer wall of the second cover part 220 to cut into the inner wall of the first cover part 210 during the rotation process, in one embodiment, one end of the first cover part 210 is provided with a first inscribed bevel 211, and the other end is provided with a first circumscribed bevel 212; one end of the second cover part 220 is provided with a second circumscribed bevel 221, and the other end is provided with a second inscribed bevel 222; wherein the first inscribed bevel 211 is adjacent to the second circumscribed bevel 221, and the first circumscribed bevel 212 is adjacent to the second inscribed bevel 222; when the first cover part 210 rotates, the first circumscribed bevel 212 can move along the second inscribed bevel 222, so that the first cover part 210 can cut into the second cover part 220; when the second cover part 220 rotates, the second circumscribed bevel 221 can move along the first inscribed bevel 211, so that the second cover part 220 can cut into the first cover part 210.

[0135] For details, please refer to Figure 5 In the illustrated embodiment, the first cover portion 210 and the second cover portion 220 have a first adjacent end and a second adjacent end, the first adjacent end is composed of a first inscribed bevel 211 and a second circumscribed bevel 221, and the second adjacent end is composed of a first circumscribed bevel 212 and a second inscribed bevel 222.

[0136] At the first adjacent end, the inner wall of the end of the first cover part 210 is provided with a chamfered surface, and the outer wall of the end of the second cover part 220 is provided with a chamfered surface, and the two sets of chamfered surfaces (ie, the first inner chamfered surface 211 and the second outer chamfered surface 221) can be tangent to each other.

[0137] At the second adjacent end, the outer wall of the end of the first cover portion 210 is provided with a chamfered surface, and the inner wall of the end of the second cover portion 220 is provided with a chamfered surface, and the two sets of chamfered surfaces (ie, the first outer chamfered surface 212 and the second inner chamfered surface 222) can be tangent to each other.

[0138] During rotation, the outer bevel moves toward the corresponding inner bevel, so that the first cover portion 210 and the second cover portion 220 can conveniently cut into each other, thereby realizing the interaction between the cleaning element of the outer wall of one and the inner wall of the other.

[0139] In this embodiment, during cleaning, the rotation direction of the first cover portion 210 is opposite to the rotation direction of the second cover portion 220 to ensure that the circumscribed bevel surface moves toward the corresponding inscribed bevel surface.

[0140] The above embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims

1. A rotary self-cleaning etching device, characterized in that: include: A working room (110) and a dielectric cover (120), wherein the dielectric cover (120) is disposed on the working room (110) and is in communication with the working room (110), and a wafer etching chamber is formed between the dielectric cover (120) and the working room (110); A carrier (130) is disposed in the wafer etching chamber and is used to receive the wafer; A coil (140) wound outside the dielectric cover (120); An inner cover (200) is arranged inside the medium cover (120) and suspended above the carrier (130); the inner cover (200) is arranged in a cylindrical shape; a plurality of spaced-apart perforations (202) are provided on the cylinder wall of the inner cover (200); and a shielding edge (201) extending inwards is provided at the bottom of the inner cover (200) close to the carrier (130); A rotation driving member (310), used for driving the carrier (130) to rotate; A lifting drive member (320) used for driving the carrier (130) to move up and down; The working room (110) is provided with a wafer inlet and outlet (111); when the carrier (130) is in a low position, it faces the wafer inlet and outlet (111) to facilitate receiving the wafer; when the carrier (130) is in a high position, it approaches or contacts the shielding edge (201); the shielding edge (201) can prevent contaminants from entering the working room (110); The rotary self-cleaning etching device further comprises a lifting component (400), wherein the lifting component (400) is arranged on the carrier (130) and is used to lift up the inner cover (200); Wherein, a soft metal film is attached to the surface of the inner cover (200), and the soft metal film can adhere to pollutants generated during the etching process; Through the lifting assembly (400) and the rotating drive member (310), the inner cover (200) can rotate relative to the medium cover (120), thereby preventing the soft metal film from adhering to the inner cover (200) and the medium cover (120) and blocking the through hole (202); The outer wall of the inner cover (200) facing the medium cover (120) is provided with a cleaning piece; When the inner cover (200) rotates, the cleaning element acts on the medium cover (120) and can remove pollutants attached to the medium cover (120).

2. The rotary self-cleaning etching device according to claim 1, characterized in that: The medium cover (120) comprises a cover body (121) and a cover plate (122); the cover body (121) is arranged in a cylindrical shape; and the cover plate (122) is sealingly arranged at one end of the cover body (121) away from the working chamber (110); The coil (140) is wound outside the cover (121); An air inlet is provided on the cover plate (122), and the air inlet is connected to an air supply device; The working room (110) is provided with an air outlet, and the air outlet is connected to an air extraction device; During the etching process, the gas supply device delivers etching gas to the wafer etching chamber through the gas inlet, and the gas extraction device extracts unreacted etching gas through the gas outlet, thereby maintaining the gas pressure in the chamber; After the etching is completed, the gas supply device delivers clean gas to the wafer etching chamber through the gas inlet, and the gas extraction device extracts the blown pollutants through the gas outlet.

3. The rotary self-cleaning etching device according to claim 1, characterized in that: A communication hole is provided at the top of the working room (110); the medium cover (120) is arranged outside the communication hole and is sealed and connected to the top wall of the working room (110); The bottom of the medium cover (120) is open, and the medium cover (120) is connected to the working chamber (110) through the communication hole; The inner cover (200) is arranged in a cylindrical shape, and the shielding edge (201) is arranged in a circular ring shape; The inner diameter of the circle formed by the shielding edge (201) is smaller than the diameter of the communicating hole, and the diameter of the cylinder of the inner cover (200) is larger than the diameter of the communicating hole; In a non-lifting state, the working chamber (110) supports the inner cover (200); In the jacking state, the jacking assembly (400) can pass through the connecting hole, contact the shielding edge (201), and lift up the inner cover (200).

4. The rotary self-cleaning etching device according to claim 1, characterized in that: The carrier (130) is provided with a movable hole; The lifting assembly (400) comprises: A supporting member (410) capable of passing through the movable hole and contacting the shielding edge (201); A lifting driving member (420), wherein a fixed end of the lifting driving member (420) is connected to the carrier (130) and is disposed below the carrier (130), and a movable end of the lifting driving member (420) is connected to the supporting member (410); The lifting driving member (420) can drive the lifting member (410) to extend from the movable hole, so that the lifting member (410) can lift up the inner cover (200).

5. The rotary self-cleaning etching device according to claim 4, characterized in that: The cover edge (201) is provided with a limiting hole, and the supporting member (410) can be inserted into the limiting hole.

6. The rotary self-cleaning etching device according to claim 4, characterized in that: In a non-lifted state, the inner cover (200) is located at the top of the working room (110), and an impurity removal channel (203) inclined downward toward the cavity is provided between the top wall of the working room (110) and the shielding edge (201), and pollutants can be discharged through the impurity removal channel (203).

7. The rotary self-cleaning etching device according to claim 1, characterized in that: The through holes (202) extend vertically, and a plurality of the through holes (202) are distributed at equal intervals along a circumferential direction; And / or, the width of the perforation (202) gradually decreases along the radial direction, and the closer to the medium cover (120), the larger the width of the perforation (202), so as to prevent contaminants from adhering to the perforation (202); and / or, the surface of the inner cover (200) is sandblasted to facilitate the attachment of the soft metal film; And / or, the soft metal film is an aluminum film.

8. The rotary self-cleaning etching device according to claim 1, characterized in that: It also comprises a temperature control mechanism, which is used to maintain the temperature of the medium cover (120) and the inner cover (200) so as to reduce the temperature difference between the medium cover (120) and the inner cover (200) in a working state and a static state.

9. The rotary self-cleaning etching device according to any one of claims 1 to 8, characterized in that: The inner cover (200) comprises a first cover portion (210) and a second cover portion (220) which are arranged opposite to each other, and the first cover portion (210) and the second cover portion (220) are both arranged in an arc shape; The rotary self-cleaning etching device comprises two groups of lifting assemblies (400), wherein one group of the lifting assemblies (400) is arranged below the first cover part (210) and is used to lift up the first cover part (210), and the other group of the lifting assemblies (400) is arranged below the second cover part (220) and is used to lift up the second cover part (220); The cleaning member is provided on the outer walls of the first cover portion (210) and the second cover portion (220); When the first cover part (210) rotates relative to the second cover part (220), the cleaning member on the outer wall of the first cover part (210) can clean the inner wall of the second cover part (220); When the second cover part (220) rotates relative to the first cover part (210), the cleaning member on the outer wall of the second cover part (220) can clean the inner wall of the first cover part (210).

10. The rotary self-cleaning etching device according to claim 9, characterized in that: One end of the first cover portion (210) is provided with a first inscribed inclined surface (211), and the other end is provided with a first circumscribed inclined surface (212); One end of the second cover portion (220) is provided with a second circumscribed inclined surface (221), and the other end is provided with a second circumscribed inclined surface (222); Wherein, the first inscribed bevel (211) is adjacent to the second circumscribed bevel (221), and the first circumscribed bevel (212) is adjacent to the second inscribed bevel (222); When the first cover portion (210) rotates, the first externally-engraved inclined surface (212) can move along the second internally-engraved inclined surface (222), so that the first cover portion (210) can cut into the second cover portion (220); When the second cover portion (220) rotates, the second externally-engraved inclined surface (221) can move along the first internally-engraved inclined surface (211), so that the second cover portion (220) can cut into the first cover portion (210).

Images