Wireless temperature measuring device suitable for semiconductor vacuum chamber

Abstract

The invention discloses a wireless temperature measuring device suitable for a semiconductor vacuum chamber, and belongs to the technical field of wafer temperature measurement, a device main body comprises an upper silicon wafer and a lower silicon wafer, a wireless temperature measuring assembly is arranged between the upper silicon wafer and the lower silicon wafer, and the wireless temperature measuring assembly is composed of a circuit, a temperature measuring device, a battery and a master controller. The circuit is arranged between the upper silicon wafer and the lower silicon wafer, the temperature measuring device, the battery and the master controller are all electrically connected with the circuit, and the upper silicon wafer and the lower silicon wafer are bonded through high-temperature bonding glue; during specific implementation, temperature measurement is performed on the interior of the wafer through the temperature measurement device, obtained temperature data are uploaded to a cloud end through the master control, the battery is a power supply of the temperature measurement device and the master control, the wireless temperature measurement device can eliminate partial pollution caused by wired temperature measurement during use, through holes are prevented from being formed in the processing chamber, and the processing efficiency is improved. And the manufacturing difficulty is reduced and the temperature measurement effect is good.

Description

Technical Field

[0001] The present invention relates to the technical field of wafer temperature measurement, and in particular to a wireless temperature measurement device suitable for a semiconductor vacuum chamber. Background Art

[0002] In the process of integrated circuit manufacturing, temperature is an extremely important parameter, especially as the chip process size continues to decrease, the temperature measurement and control of the wafer surface is extremely important. For example, in plasma etching, in order to improve the etching rate and the uniformity of temperature distribution, it is generally necessary to accurately measure the temperature of the wafer, so as to accurately control the temperature of the wafer and ensure a good etching effect. Therefore, a temperature measurement device is needed, which can record the temperature information of the wafer during the process. Engineers can adjust the equipment parameters and processes by analyzing this temperature information, so as to improve the yield of chip manufacturing.

[0003] At present, the wafer temperature detection device is mainly wired. The wired wafer temperature measurement device embeds or sticks the temperature sensor on the surface of the wafer and leads the signal out through the wire. This device is simple to make, but there are many problems, such as introducing pollution, the lead wire destroying the temperature field on the wafer surface, and the lead wire hindering the temperature measurement. Summary of the invention

[0004] Purpose of the invention: To provide a wireless temperature measurement device suitable for a semiconductor vacuum chamber to solve the above-mentioned problems existing in the prior art.

[0005] In order to solve the above technical problems, the present invention provides a wireless temperature measuring device suitable for a semiconductor vacuum chamber, the device comprising an upper silicon wafer and a lower silicon wafer, a wireless temperature measuring component is arranged between the upper silicon wafer and the lower silicon wafer, the wireless temperature measuring component is composed of a circuit, a temperature measuring device, a battery and a main control, the circuit is arranged between the upper silicon wafer and the lower silicon wafer, the temperature measuring device, the battery and the main control are electrically connected to the circuit, and the upper silicon wafer and the lower silicon wafer are bonded by high-temperature adhesive.

[0006] As a preferred solution, the upper silicon wafer and the lower silicon wafer are both circular, and RF coils are arranged at the centers of the upper silicon wafer and the lower silicon wafer. The circuit is arranged in multiple pieces, and the multiple circuits are arranged in a circular array around the RF coil, and the angles between the adjacent circuits are equal.

[0007] As a preferred solution, the number of the circuits is between 10 and 20.

[0008] As a preferred solution, the battery and the main control are both welded on the lower silicon wafer by welding agent.

[0009] As a preferred solution, grooves for accommodating the battery and the main control are provided on both the upper silicon wafer and the lower silicon wafer.

[0010] As a preferred solution, the outside of the wireless temperature measurement component is wrapped with an insulating film.

[0011] As a preferred solution, the outer side of the wireless temperature measurement component is wrapped with an anti-electromagnetic interference film.

[0012] As a preferred solution, the anti-electromagnetic interference film is specifically a polyimide film.

[0013] As a preferred solution, an anti-etching film is provided above the upper silicon wafer.

[0014] Beneficial effects: The present invention relates to a wireless temperature measuring device suitable for a semiconductor vacuum chamber. In a specific implementation, the temperature inside a wafer is measured by the temperature measuring device, and the obtained temperature data is uploaded to the cloud by the main control. The battery is the power source for the temperature measuring device and the main control. The present invention is a wireless temperature measurement device, which can eliminate part of the pollution caused by wired temperature measurement when used, and avoids opening a through hole in the processing chamber, thereby reducing the manufacturing difficulty and achieving a good temperature measurement effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a schematic diagram of the overall cross-sectional structure of the present invention.

[0016] Figure 2 It is a partial structural cross-sectional schematic diagram of the present invention.

[0017] The reference numerals in the figure are: upper silicon wafer 1, lower silicon wafer 2, circuit 3, temperature measuring device 4, RF coil 5, battery 6, main control 7, high temperature adhesive 8, insulating film 9, anti-electromagnetic interference film 10, solder 11, anti-etching film 12, groove 13. DETAILED DESCRIPTION

[0018] In the following description, a large number of specific details are provided to provide a more thorough understanding of the present invention. However, it is apparent to those skilled in the art that the present invention can be implemented without one or more of these details. In other examples, in order to avoid confusion with the present invention, some technical features well known in the art are not described.

[0019] The applicant has found that the wired wafer temperature measurement device embeds or attaches the temperature sensor to the surface of the wafer and leads the signal out through the wire. This device is simple to make, but there are many problems, such as introducing pollution, the lead wire destroying the temperature field on the wafer surface, and the lead wire hindering the temperature measurement.

[0020] To this end, the present invention provides a wireless temperature measurement device suitable for semiconductor vacuum chambers. Figure 1 to Figure 2 The device includes an upper silicon wafer 1 and a lower silicon wafer 2, a wireless temperature measuring component is arranged between the upper silicon wafer 1 and the lower silicon wafer 2, and the wireless temperature measuring component is composed of a circuit 3, a temperature measuring device 4, a battery 6 and a main control 7. The circuit 3 is arranged between the upper silicon wafer 1 and the lower silicon wafer 2, and the temperature measuring device 4, the battery 6 and the main control 7 are all electrically connected to the circuit 3. The upper silicon wafer 1 and the lower silicon wafer 2 are bonded by a high-temperature adhesive 8; in specific implementation, the temperature inside the wafer is measured by the temperature measuring device 4, and the obtained temperature data is uploaded to the cloud by the main control 7. The battery 6 is the power supply of the temperature measuring device 4 and the main control 7. The present invention is a wireless temperature measuring device, which can eliminate part of the pollution caused by wired temperature measurement when used, and avoids opening a through hole in the processing chamber, thereby reducing the manufacturing difficulty and achieving a good temperature measurement effect.

[0021] Preferably, the upper silicon wafer 1 and the lower silicon wafer 2 are both circular, and an RF coil 5 is arranged at the center of the upper silicon wafer 1 and the lower silicon wafer 2. The circuit 3 is arranged in multiple numbers, and the multiple circuits 3 are arranged in a circular array around the RF coil 5, and the angles between the adjacent circuits 3 are equal; in specific implementation, the multiple circuits 3 are interconnected through the RF coil 5, and the arrangement of the circuits 3 in a circular array around the RF coil 5 can make the temperature measuring device 4 evenly distributed inside the wafer.

[0022] Preferably, when the number of the circuits 3 is too small, the temperature measuring device 4 cannot be evenly distributed inside the wafer. When the number of the circuits 3 is too large, more batteries 6 are required for power supply, and it is difficult to form a circular array of multiple circuits 3 equidistant around the RF coil 5. Therefore, the best effect is achieved when the number of the circuits 3 is between 10 and 20.

[0023] Furthermore, in order to make the battery 6 and the main controller 7 more firmly fixed, the battery 6 and the main controller 7 are both welded on the lower silicon wafer 2 by welding agent 11 .

[0024] Furthermore, in order to further securely fix the battery 6 and the main control 7, grooves 13 for accommodating the battery 6 and the main control 7 are provided on the upper silicon wafer 1 and the lower silicon wafer 2. This arrangement can also reduce the overall thickness of the wafer.

[0025] Furthermore, an insulating film 9 is wrapped around the outside of the wireless temperature measurement component.

[0026] Preferably, the outer side of the wireless temperature measurement component is wrapped with an anti-electromagnetic interference film 10.

[0027] Preferably, the anti-electromagnetic interference film 10 is specifically a polyimide film. The conductor will be interfered by the radio frequency electric field and plasma etching silicon wafers during the etching process in the production process. The general wired temperature measurement wafer will conduct electromagnetic radiation in the radio frequency electric field environment, which will affect human health and cannot read accurate temperature data. The anti-electromagnetic interference film 10 made of polyimide material can reduce the damage of electromagnetic radiation and plasma to silicon wafers.

[0028] Preferably, an anti-etching film 12 is disposed above the upper silicon wafer 1, and the anti-etching film 12 can reduce etching damage to the silicon wafer during the etching process.

[0029] The preferred embodiments of the present invention are described in detail above in conjunction with the accompanying drawings. However, the present invention is not limited to the specific details in the above embodiments. Within the technical concept of the present invention, various equivalent transformations can be made to the technical scheme of the present invention, and these equivalent transformations all belong to the protection scope of the present invention.

Claims

1. A wireless temperature measurement device suitable for a semiconductor vacuum chamber, characterized in that: Upper silicon wafer and lower silicon wafer; A wireless temperature measurement component is arranged between the upper silicon wafer and the lower silicon wafer; The wireless temperature measurement component is composed of a circuit, a temperature measuring device, a battery and a main control. The circuit is arranged between the upper silicon wafer and the lower silicon wafer. The temperature measuring device, the battery and the main control are electrically connected to the circuit. The upper silicon wafer and the lower silicon wafer are bonded by high-temperature adhesive.

2. A wireless temperature measurement device suitable for a semiconductor vacuum chamber according to claim 1, characterized in that: The upper silicon wafer and the lower silicon wafer are both circular, and RF coils are arranged at the centers of the upper silicon wafer and the lower silicon wafer. The circuit is arranged in multiple pieces, and the multiple circuits are arranged in a circular array around the RF coil, and the angles between the adjacent circuits are equal.

3. A wireless temperature measuring device suitable for a semiconductor vacuum chamber according to claim 2, characterized in that: The number of the circuits is between 10 and 20.

4. The wireless temperature measuring device suitable for a semiconductor vacuum chamber according to claim 1, characterized in that: The battery and the main control are both welded on the lower silicon wafer by welding agent.

5. The wireless temperature measuring device suitable for a semiconductor vacuum chamber according to claim 1, characterized in that: The upper silicon wafer and the lower silicon wafer are both provided with grooves for accommodating the battery and the main control.

6. The wireless temperature measuring device suitable for a semiconductor vacuum chamber according to claim 1, characterized in that: The outside of the wireless temperature measurement component is wrapped with an insulating film.

7. The wireless temperature measuring device suitable for a semiconductor vacuum chamber according to claim 1, characterized in that: The outside of the wireless temperature measurement component is wrapped with an anti-electromagnetic interference film.

8. The wireless temperature measuring device suitable for a semiconductor vacuum chamber according to claim 7, characterized in that: The anti-electromagnetic interference film is specifically a polyimide film.

9. The wireless temperature measuring device suitable for a semiconductor vacuum chamber according to claim 7, characterized in that: An anti-etching film is arranged above the upper silicon wafer.

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