Semiconductor epitaxial gas treatment equipment and method and semiconductor process system

Abstract

The invention relates to semiconductor epitaxial gas treatment equipment, a semiconductor epitaxial gas treatment method and a semiconductor process system. The semiconductor epitaxial gas treatment equipment comprises a wet-type gas filtering unit, a first dry-type gas filtering unit, a second dry-type gas filtering unit and a discharging and recycling unit. The device has the advantages that the upstream semiconductor process equipment is communicated with the wet-type gas filtering unit, the first dry-type gas filtering unit and the second dry-type gas filtering unit, and the communication sequence of the wet-type gas filtering unit, the first dry-type gas filtering unit and the second dry-type gas filtering unit can be randomly ranked according to actual requirements; therefore, impurities such as hydrogen chloride, trichlorosilane, hydrogen phosphide, diborane, arsenic hydride and the like in the semiconductor epitaxial gas can be removed, and hydrogen is obtained, so that the semiconductor epitaxial gas can be recycled and purified to meet emission requirements.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor epitaxial gas processing, and in particular to a semiconductor epitaxial gas processing device, method and semiconductor process system. Background Art

[0002] A large amount of waste is generated during the manufacturing process of semiconductor devices, including some toxic and hazardous substances, such as fluorine-containing and chlorine-containing compounds. If the waste gas or waste liquid containing these toxic and hazardous substances is not properly handled, it will have a huge impact on the wafer manufacturing plant and its surrounding environment.

[0003] A Chinese invention patent (CN101269296A) discloses a system for treating waste gas produced by a mixture of multiple harmful gases, including a wet scrubber for treating dust, crystals and general waste gas generated by the process and a dry scrubber for treating special waste gas components containing fluorine or chlorine. A gas-liquid separation device is also included between the wet scrubber and the dry scrubber. The waste gas produced by the mixture of multiple harmful gases is separated into liquid and gas after passing through the wet scrubber and the gas-liquid separation device in sequence, and the separated gas is then processed by the dry scrubber and discharged.

[0004] However, the above disclosed system for treating waste gas produced by mixing multiple harmful gases has the following defects:

[0005] 1. The existing equipment has no backup processing device, and processing gaps may occur during the continuous processing of semiconductor epitaxial gases, resulting in the risk of waste gas not being processed in time;

[0006] 2. The existing equipment cannot customize the processing order and processing sequence of different waste gases in semiconductor epitaxial gases, and cannot adjust the processing methods in a targeted manner;

[0007] 3. The existing equipment has no recovery device and cannot recover the gas that can be reused after treatment.

[0008] Currently, no effective solution has been proposed for the problems existing in the relevant technology, such as no backup treatment device, no recovery device, and inability to adjust the treatment sequence for different waste gases. Summary of the invention

[0009] The purpose of the present invention is to provide a semiconductor epitaxial gas processing equipment, method and semiconductor process system to address the deficiencies in the prior art, so as to solve the problems existing in the related art such as no backup processing device, no recovery device and inability to adjust the processing sequence for different exhaust gases.

[0010] To achieve the above object, the technical solution adopted by the present invention is:

[0011] In a first aspect, the present invention provides a semiconductor epitaxial gas processing device, comprising:

[0012] A wet gas filtration unit, the wet gas filtration unit being in communication with an upstream semiconductor process device and used for filtering semiconductor epitaxial gas to remove hydrogen chloride and trichlorosilane;

[0013] a first dry gas filtration unit, the first dry gas filtration unit being in communication with an upstream semiconductor process device and / or the wet gas filtration unit, and being used for filtering semiconductor epitaxial gas to remove phosphine and diborane;

[0014] a second dry gas filtration unit, the second dry gas filtration unit being in communication with an upstream semiconductor process device and / or the wet gas filtration unit and / or the first dry gas filtration unit, and being used for filtering semiconductor epitaxial gas to remove arsine;

[0015] An emission recovery unit, which is connected to the wet gas filter unit and / or the first dry gas filter unit and / or the second dry gas filter unit, and is used to discharge the waste gas generated by the wet gas filter unit, the first dry gas filter unit, and the second dry gas filter unit, and to recover the hydrogen generated by the wet gas filter unit, the first dry gas filter unit, and the second dry gas filter unit.

[0016] In some of the embodiments, it also includes:

[0017] A gas-liquid separation unit is provided downstream of the wet gas filter unit and is used for performing gas-liquid separation on the semiconductor epitaxial gas processed by the wet gas filter element.

[0018] In some of the embodiments, it also includes:

[0019] A purge unit is connected to the wet gas filter unit, the first dry gas filter unit, and the second dry gas filter unit respectively, and is used to purge the entire device.

[0020] In a second aspect, the present invention further provides a semiconductor epitaxial gas processing method, comprising:

[0021] The wet gas filtration unit obtains semiconductor epitaxial gas and filters the semiconductor epitaxial gas to remove hydrogen chloride and trichlorosilane;

[0022] The first dry gas filtration unit obtains semiconductor epitaxial gas or semiconductor epitaxial gas treated by the wet gas filtration unit, and filters the semiconductor epitaxial gas to remove phosphine and diborane;

[0023] The second dry gas filtration unit obtains the semiconductor epitaxial gas or the semiconductor epitaxial gas processed by the wet gas filtration unit or the semiconductor epitaxial gas processed by the first dry gas filtration unit, and filters the semiconductor epitaxial gas to remove arsine;

[0024] The emission recovery unit discharges the waste gas generated by the wet gas filter unit, the first dry gas filter unit, and the second dry gas filter unit, and recovers the hydrogen generated by the wet gas filter unit, the first dry gas filter unit, and the second dry gas filter unit.

[0025] In a third aspect, the present invention further provides a semiconductor process system, comprising:

[0026] A semiconductor epitaxial gas processing device as described in the first aspect.

[0027] The present invention adopts the above technical solution, and has the following technical effects compared with the prior art:

[0028] A semiconductor epitaxial gas processing device, method and semiconductor process system of the present invention connects the upstream semiconductor process equipment with a wet gas filter unit, a first dry gas filter unit and a second dry gas filter unit, and the connection sequence of the wet gas filter unit, the first dry gas filter unit and the second dry gas filter unit can be arbitrarily arranged according to actual needs, thereby removing impurities such as hydrogen chloride, trichlorosilane, phosphine, diborane, arsine and the like in the semiconductor epitaxial gas and obtaining hydrogen, and then the semiconductor epitaxial gas can be recycled and the semiconductor epitaxial gas can be purified to meet the emission requirements. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 is a schematic diagram of a semiconductor epitaxial gas processing device according to an embodiment of the present invention (I);

[0030] Figure 2-3 is a schematic diagram of a wet gas filtration unit according to an embodiment of the present invention;

[0031] Figure 4-5 is a schematic diagram of a first dry gas filtration unit according to an embodiment of the present invention;

[0032] Figure 6-7 is a schematic diagram of a second dry gas filtration unit according to an embodiment of the present invention;

[0033] Figure 8 is a schematic diagram of an emission recovery unit according to an embodiment of the present invention;

[0034] Fig. 9 is a schematic diagram of a semiconductor epitaxial gas processing device according to an embodiment of the present invention (II);

[0035] Fig.10 is a schematic diagram of a semiconductor epitaxial gas processing device according to an embodiment of the present invention (III);

[0036] Fig.11 is a schematic diagram of a purge unit according to an embodiment of the present invention.

[0037] The reference numerals are: 100, wet gas filter unit; 110, wet gas filter element; 120, first control valve element; 130, second control valve element; 140, third control valve element; 150, fourth control valve element; 160, first monitoring element; 170, second monitoring element;

[0038] 200, first dry gas filter unit; 210, first dry gas filter element; 220, fifth control valve element; 230, sixth control valve element; 240, seventh control valve element; 250, eighth control valve element; 260, third monitoring element; 270, fourth monitoring element;

[0039] 300, second dry gas filter unit; 310, second dry gas filter element; 320, ninth control valve element; 330, tenth control valve element; 340, eleventh control valve element; 350, twelfth control valve element; 360, fifth monitoring element; 370, sixth monitoring element;

[0040] 400, discharge recovery unit; 410, recovery element; 420, vacuum element; 430, thirteenth control valve element; 440, fourteenth control valve element; 450, fifteenth control valve element; 460, sixteenth control valve element;

[0041] 500. Gas-liquid separation unit;

[0042] 600, purge unit; 610, seventeenth control valve element; 620, eighteenth control valve element; 630, nineteenth control valve element; 640, twentieth control valve element; 650, twenty-first control valve element; 660, twenty-second control valve element. DETAILED DESCRIPTION

[0043] In order to make the purpose, technical solutions and advantages of the present application clearer, the present application is described and illustrated below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not intended to limit the present application. Based on the embodiments provided in the present application, all other embodiments obtained by ordinary technicians in the field without making creative work are within the scope of protection of the present application.

[0044] Obviously, the drawings described below are only some examples or embodiments of the present application. For ordinary technicians in this field, the present application can also be applied to other similar scenarios based on these drawings without creative work. In addition, it can also be understood that although the efforts made in this development process may be complicated and lengthy, for ordinary technicians in this field related to the content disclosed in this application, some changes in design, manufacturing or production based on the technical content disclosed in this application are just conventional technical means, and should not be understood as insufficient content disclosed in this application.

[0045] Reference to "embodiments" in this application means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those of ordinary skill in the art that the embodiments described in this application may be combined with other embodiments without conflict.

[0046] Unless otherwise defined, the technical terms or scientific terms involved in this application should be understood by people with ordinary skills in the technical field to which this application belongs. The words "one", "a", "a", "the" and the like involved in this application do not indicate a quantitative limitation, and may represent the singular or plural. The terms "include", "comprise", "have" and any of their variations involved in this application are intended to cover non-exclusive inclusions; for example, a process, method, system, product or device that includes a series of steps or modules (units) is not limited to the listed steps or units, but may also include steps or units that are not listed, or may also include other steps or units inherent to these processes, methods, products or devices. The words "connect", "connected", "coupled" and the like involved in this application are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. The "multiple" involved in this application refers to two or more. "And / or" describes the association relationship of associated objects, indicating that there may be three relationships, for example, "A and / or B" can represent: A exists alone, A and B exist at the same time, and B exists alone. The character " / " generally indicates that the objects before and after are in an "or" relationship. The terms "first", "second", "third", etc. involved in this application are only used to distinguish similar objects and do not represent a specific ordering of the objects.

[0047] Example 1

[0048] An exemplary embodiment of the present invention is as follows Figure 1As shown, a semiconductor epitaxial gas processing device includes a wet gas filter unit 100 , a first dry gas filter unit 200 , a second dry gas filter unit 300 and an exhaust recovery unit 400 . Among them, the wet gas filtration unit 100 is connected to the upstream semiconductor process equipment, and is used to filter the semiconductor epitaxial gas to remove hydrogen chloride and trichlorosilane; the first dry gas filtration unit 200 is connected to the upstream semiconductor process equipment and / or the wet gas filtration unit 100, and is used to filter the semiconductor epitaxial gas to remove phosphine and diborane; the second dry gas filtration unit 300 is connected to the upstream semiconductor process equipment and / or the wet gas filtration unit 100 and / or the first dry gas filtration unit 200, and is used to filter the semiconductor epitaxial gas to remove arsine; the emission recovery unit 400 is connected to the wet gas filtration unit 100 and / or the first dry gas filtration unit 200 and / or the second dry gas filtration unit 300, and is used to discharge the waste gas generated by the wet gas filtration unit 100, the first dry gas filtration unit 200, and the second dry gas filtration unit 300, and to recover the hydrogen generated by the wet gas filtration unit 100, the first dry gas filtration unit 200, and the second dry gas filtration unit 300.

[0049] It should be noted that the first end and the second end in the present invention are two ends in the length direction thereof.

[0050] It should be noted that the connection sequence between the upstream semiconductor process equipment, the wet gas filter unit 100, the first dry gas filter unit 200, and the second dry gas filter unit 300 in the present invention can be set according to the processing requirements of different gases, including the following methods, according to the gas flow sequence:

[0051] (1) Upstream semiconductor process equipment → wet gas filtration unit 100 → first dry gas filtration unit 200 → second dry gas filtration unit 300 → emission recovery unit 400;

[0052] (2) Upstream semiconductor process equipment → wet gas filtration unit 100 → second dry gas filtration unit 300 → first dry gas filtration unit 200 → emission recovery unit 400;

[0053] (3) Upstream semiconductor process equipment → first dry gas filtration unit 200 → wet gas filtration unit 100 → second dry gas filtration unit 300 → emission recovery unit 400;

[0054] (4) Upstream semiconductor process equipment → first dry gas filter unit 200 → second dry gas filter unit 300 → wet gas filter unit 100 → emission recovery unit 400;

[0055] (5) Upstream semiconductor process equipment → second dry gas filtration unit 300 → wet gas filtration unit 100 → first dry gas filtration unit 200 → emission recovery unit 400;

[0056] (6) Upstream semiconductor process equipment → second dry gas filtration unit 300 → first dry gas filtration unit 200 → wet gas filtration unit 100 → exhaust recovery unit 400.

[0057] In the present invention, method (1) is taken as an example for description.

[0058] like Figure 2 and Figure 3 As shown, the wet gas filter unit 100 includes at least one first gas input element, at least one wet gas filter element 110 and at least one first gas output element. The first end of the first gas input element is connected to the upstream semiconductor process equipment and / or the first dry gas filter unit 200 and / or the second dry gas filter unit 300, and is used to transport semiconductor epitaxial gas; the wet gas filter element 110 is connected to the second end of the first gas input element, and is used to filter the semiconductor epitaxial gas to remove hydrogen chloride and trichlorosilane; the first end of the first gas output element is connected to the wet gas filter element 110, and the second end of the first gas output element is connected to the first dry gas filter unit 200 and / or the second dry gas filter unit 300 and / or the emission recovery unit 400, and is used to transport the semiconductor epitaxial gas processed by the wet gas filter element 110.

[0059] In some of the embodiments, the first gas input element includes but is not limited to a stainless steel tube.

[0060] In some of the embodiments, the wet gas filter element 110 includes, but is not limited to, a water wash tank.

[0061] In some of the embodiments, the first gas output element includes but is not limited to a stainless steel tube.

[0062] In some of the embodiments, the wet gas filtration unit 100 includes a plurality of first gas input elements, a plurality of wet gas filter elements 110, and a plurality of first gas output elements, and the plurality of first gas input elements, the plurality of wet gas filter elements 110, and the plurality of first gas output elements correspond one to one.

[0063] It should be noted that the number of the wet gas filter elements 110 is two, and the two wet gas filter elements 110 are connected in series and in parallel with each other.

[0064] In some of the embodiments, the number of the wet gas filter elements 110 may be 3, 4, etc., that is, the number of the wet gas filter elements 110 may be set according to actual processing requirements, and no excessive restrictions are imposed herein.

[0065] It should be noted that when two wet gas filter elements 110 are connected in parallel, the two wet gas filter elements 110 can achieve separate processing of semiconductor epitaxial gas; in addition, when gaps appear during the semiconductor epitaxial gas processing, the two wet gas filter elements 110 can achieve uninterrupted operation during the gas processing process.

[0066] It should be noted that, when two wet gas filter elements 110 are connected in series, the two wet gas filter elements 110 can realize multi-stage processing of semiconductor epitaxial gas, that is, the semiconductor epitaxial gas processed by one wet gas filter element 110 can be passed into another wet gas filter element 110 for secondary processing.

[0067] In some embodiments, the number of the first gas input elements matches the number of the wet gas filter elements 110. It should be understood that the number of the first gas input elements is the same as the number of the wet gas filter elements 110.

[0068] In some embodiments, the number of the first gas output elements matches the number of the wet gas filter elements 110. It should be understood that the number of the first gas output elements is the same as the number of the wet gas filter elements 110.

[0069] Furthermore, the wet gas filter unit 100 further includes at least one first series element, wherein the first end and the second end of the first series element are respectively connected to the two wet gas filter elements 110 for connecting the two wet gas filter elements 110 in series.

[0070] Specifically, a first end of the first series element is in communication with one wet gas filter element 110 , and a second end of the first series element is in communication with a first gas input element on another wet gas filter element 110 .

[0071] In some of these embodiments, the first series element includes, but is not limited to, a stainless steel tube.

[0072] In some of the embodiments, the number of first series elements matches the number of wet gas filter elements 110. It should be understood that the number of first series elements is not less than the number of wet gas filter elements 110. For example, if there are three wet gas filter elements 110, the number of first series elements may be three (i.e., the first end of each first series element is connected to one wet gas filter element 110, and the second end of each first series element is connected to the remaining two wet gas filter elements 110), or the number of first series elements may be six (i.e., the first end of each first series element is connected to only one wet gas filter element 110, and the second end of each first series element is connected to only one wet gas filter element 110).

[0073] Furthermore, the wet gas filtration unit 100 further includes at least one first bypass element, wherein a first end of the first bypass element is connected to the first gas input element, and a second end of the first bypass element is connected to the first gas output element for pressure relief.

[0074] In some of the embodiments, the first bypass element includes, but is not limited to, a stainless steel tube.

[0075] In some embodiments, the number of the first bypass elements matches the number of the wet gas filter elements 110. It should be understood that the number of the first bypass elements is the same as the number of the wet gas filter elements 110.

[0076] Furthermore, the wet gas filtration unit 100 further includes at least one first control valve element 120 and at least one second control valve element 130. The first control valve element 120 is disposed at the first gas input element to control the flow of the first gas input element; the second control valve element 130 is disposed at the first gas output element to control the flow of the first gas output element.

[0077] Specifically, the first control valve element 120 is provided in a three-way valve structure, and the first control valve element 120 is provided at the connection point between the first gas input element and the first series element.

[0078] In some embodiments, the number of the first control valve elements 120 matches the number of the first gas input elements. It should be understood that the number of the first control valve elements 120 is the same as the number of the first gas input elements.

[0079] In some of the embodiments, the first control valve element 120 includes, but is not limited to, a diaphragm valve.

[0080] In some of the embodiments, the number of the second control valve elements 130 matches the number of the first gas output elements; it should be understood that the number of the second control valve elements 130 is the same as the number of the first gas output elements.

[0081] In some of the embodiments, the second control valve element 130 includes, but is not limited to, a diaphragm valve.

[0082] Furthermore, the wet gas filter unit 100 further includes at least one third control valve element 140. The third control valve element 140 is disposed on the first series element to control the flow of the first series element.

[0083] In some embodiments, the number of the third control valve elements 140 matches the number of the first series elements. It should be understood that the number of the third control valve elements 140 is the same as the number of the first series elements.

[0084] In some of the embodiments, the third control valve element 140 includes, but is not limited to, a diaphragm valve.

[0085] Furthermore, the wet gas filter unit 100 further includes at least one fourth control valve element 150. The fourth control valve element 150 is disposed in the first bypass element to control the flow of the first bypass element.

[0086] In some embodiments, the number of the fourth control valve elements 150 matches the number of the first bypass elements. It should be understood that the number of the fourth control valve elements 150 is the same as the number of the first bypass elements.

[0087] In some of the embodiments, the fourth control valve element 150 includes, but is not limited to, a diaphragm valve.

[0088] Furthermore, the wet gas filter unit 100 further includes at least one first monitoring element 160 . The first monitoring element 160 is in communication with the wet gas filter element 110 and is used to monitor the pressure inside the wet gas filter element 110 .

[0089] In some embodiments, the number of the first monitoring elements 160 matches the number of the wet gas filter elements 110. It should be understood that the number of the first monitoring elements 160 is the same as the number of the wet gas filter elements 110.

[0090] In some of the embodiments, the first monitoring element 160 includes but is not limited to a pressure sensor.

[0091] Furthermore, the wet gas filter unit 100 further includes at least one second monitoring element 170 . The second monitoring element 170 is in communication with the wet gas filter element 110 and is used to monitor the temperature inside the wet gas filter element 110 .

[0092] In some embodiments, the number of the second monitoring elements 170 matches the number of the wet gas filter elements 110. It should be understood that the number of the second monitoring elements 170 is the same as the number of the wet gas filter elements 110.

[0093] In some of the embodiments, the second monitoring element 170 includes but is not limited to a temperature sensor.

[0094] like Fig. 9 and Fig.10 As shown, the first dry gas filter unit 200 includes at least one second gas input element, at least one first dry gas filter element 210 and at least one second gas output element. The first end of the second gas input element is connected to the upstream semiconductor process equipment or the wet gas filter unit 100 and / or the second dry gas filter unit 300, and is used to transport semiconductor epitaxial gas; the first dry gas filter element 210 is connected to the second end of the second gas input element, and is used to filter the semiconductor epitaxial gas to remove phosphine and diborane; the first end of the second gas output element is connected to the first dry gas filter element 210, and the second end of the second gas output element is connected to the wet gas filter unit 100 and / or the second dry gas filter unit 300 and / or the emission recovery unit 400, and is used to transport the semiconductor epitaxial gas processed by the first dry gas filter element 210.

[0095] In some of the embodiments, the second gas input element includes but is not limited to a stainless steel tube.

[0096] In some of the embodiments, the first dry gas filter element 210 includes but is not limited to an adsorption filter canister.

[0097] In some of the embodiments, the second gas output element includes but is not limited to a stainless steel tube.

[0098] In some of the embodiments, the first dry gas filter unit 200 includes a plurality of second gas input elements, a plurality of first dry gas filter elements 210, and a plurality of second gas output elements, and the plurality of second gas input elements, the plurality of first dry gas filter elements 210, and the plurality of second gas output elements correspond one to one.

[0099] It should be noted that the number of the first dry-type gas filter elements 210 is two, and the two first dry-type gas filter elements 210 are connected in series and in parallel with each other.

[0100] In some of the embodiments, the number of the first dry gas filter elements 210 may be 3, 4, etc., that is, the number of the first dry gas filter elements 210 may be set according to actual processing requirements, and no excessive restrictions are imposed herein.

[0101] It should be noted that when two first dry gas filter elements 210 are connected in parallel, the two first dry gas filter elements 210 can realize separate processing of semiconductor epitaxial gas; in addition, when gaps appear during the semiconductor epitaxial gas processing, the two first dry gas filter elements 210 can realize uninterrupted operation during the gas processing process.

[0102] It should be noted that, when two first dry gas filter elements 210 are connected in series, the two first dry gas filter elements 210 can realize multi-stage processing of semiconductor epitaxial gas, that is, the semiconductor epitaxial gas processed by one first dry gas filter element 210 can be passed into another first dry gas filter element 210 for secondary processing.

[0103] In some of the embodiments, the number of the second gas input elements matches the number of the first dry gas filter elements 210 ; it should be understood that the number of the second gas input elements is the same as the number of the first dry gas filter elements 210 .

[0104] In some of the embodiments, the number of the second gas output elements matches the number of the first dry gas filter elements 210 ; it should be understood that the number of the second gas output elements is the same as the number of the first dry gas filter elements 210 .

[0105] Furthermore, the first dry-type gas filter unit 200 further includes a plurality of second series elements, wherein the first ends and the second ends of the plurality of second series elements are respectively connected to the two first dry-type gas filter elements 210 , so as to connect the two first dry-type gas filter elements 210 in series.

[0106] Specifically, a first end of the second series element is in communication with one first dry gas filter element 210 , and a second end of the second series element is in communication with a second gas input element on another first dry gas filter element 210 .

[0107] In some of these embodiments, the second series element includes, but is not limited to, a stainless steel tube.

[0108] In some embodiments, the number of the second series elements matches the number of the first dry gas filter elements 210; it should be understood that the number of the second series elements is not less than the number of the first dry gas filter elements 210. For example, if there are three first dry gas filter elements 210, there may be three second series elements (i.e., the first end of each second series element is connected to a first dry gas filter element 210, and the second end of each second series element is connected to the remaining two first dry gas filter elements 210), or there may be six second series elements (i.e., the first end of each second series element is connected to only one first dry gas filter element 210, and the second end of each second series element is connected to only one first dry gas filter element 210).

[0109] Furthermore, the first dry gas filter unit 200 further includes at least one second bypass element, wherein a first end of the second bypass element is connected to the second gas input element, and a second end of the second bypass element is connected to the second gas output element for pressure relief.

[0110] In some of the embodiments, the second bypass element includes, but is not limited to, a stainless steel tube.

[0111] In some of the embodiments, the number of the second bypass elements matches the number of the first dry gas filter elements 210 ; it should be understood that the number of the second bypass elements is the same as the number of the first dry gas filter elements 210 .

[0112] Furthermore, the first dry gas filter unit 200 further includes at least one fifth control valve element 220 and at least one sixth control valve element 230. The fifth control valve element 220 is disposed at the second gas input element to control the flow of the second gas input element; the sixth control valve element 230 is disposed at the second gas output element to control the flow of the second gas output element.

[0113] Specifically, the fifth control valve element 220 is provided in a three-way valve structure, and the fifth control valve element 220 is provided at the connection point between the second gas input element and the second series element.

[0114] In some of the embodiments, the number of the fifth control valve elements 220 matches the number of the second gas input elements; it should be understood that the number of the fifth control valve elements 220 is the same as the number of the second gas input elements.

[0115] In some of the embodiments, the fifth control valve element 220 includes, but is not limited to, a diaphragm valve.

[0116] In some of the embodiments, the number of the sixth control valve elements 230 matches the number of the second gas output elements; it should be understood that the number of the sixth control valve elements 230 is the same as the number of the second gas output elements.

[0117] In some of the embodiments, the sixth control valve element 230 includes, but is not limited to, a diaphragm valve.

[0118] Furthermore, the first dry-type gas filter unit 200 further includes at least one seventh control valve element 240. The seventh control valve element 240 is disposed in the second series element to control the flow of the second series element.

[0119] In some of the embodiments, the number of the seventh control valve elements 240 matches the number of the second series elements; it should be understood that the number of the seventh control valve elements 240 is the same as the number of the second series elements.

[0120] In some of the embodiments, the seventh control valve element 240 includes, but is not limited to, a diaphragm valve.

[0121] Furthermore, the first dry-type gas filter unit 200 further includes at least one eighth control valve element 250. The eighth control valve element 250 is disposed in the second bypass element to control the flow of the second bypass element.

[0122] In some of the embodiments, the number of the eighth control valve elements 250 matches the number of the second bypass elements; it should be understood that the number of the eighth control valve elements 250 is the same as the number of the second bypass elements.

[0123] In some of the embodiments, the eighth control valve element 250 includes, but is not limited to, a diaphragm valve.

[0124] Furthermore, the first dry-type gas filter unit 200 further includes at least one third monitoring element 260 . The third monitoring element 260 is in communication with the first dry-type gas filter element 210 and is used to monitor the pressure inside the first dry-type gas filter element 210 .

[0125] In some of the embodiments, the number of the third monitoring elements 260 matches the number of the first dry gas filter elements 210 ; it should be understood that the number of the third monitoring elements 260 is the same as the number of the first dry gas filter elements 210 .

[0126] In some of the embodiments, the third monitoring element 260 includes but is not limited to a pressure sensor.

[0127] Furthermore, the first dry-type gas filter unit 200 further includes at least one fourth monitoring element 270 . The fourth monitoring element 270 is in communication with the first dry-type gas filter element 210 and is used to monitor the temperature inside the first dry-type gas filter element 210 .

[0128] In some of the embodiments, the number of the fourth monitoring elements 270 matches the number of the first dry gas filter elements 210 ; it should be understood that the number of the fourth monitoring elements 270 is the same as the number of the first dry gas filter elements 210 .

[0129] In some of the embodiments, the fourth monitoring element 270 includes but is not limited to a temperature sensor.

[0130] like Figure 6 and Figure 7 As shown, the second dry gas filter unit 300 includes at least one third gas input element, at least one second dry gas filter element 310 and at least one third gas output element. The first end of the third gas input element is connected to the upstream semiconductor process equipment and / or the wet gas filter unit 100 and / or the first dry gas filter unit 200, and is used to transport semiconductor epitaxial gas; the second dry gas filter element 310 is connected to the second end of the third gas input element, and is used to filter the semiconductor epitaxial gas to remove arsine; the first end of the third gas output element is connected to the second dry gas filter element 310, and the second end of the third gas output element is connected to the wet gas filter unit 100 and / or the first dry gas filter unit 200 and / or the emission recovery unit 400, and is used to transport the semiconductor epitaxial gas processed by the second dry gas filter element 310.

[0131] In some of the embodiments, the third gas input element includes but is not limited to a stainless steel tube.

[0132] In some of the embodiments, the second dry gas filter element 310 includes but is not limited to an adsorption filter canister.

[0133] In some of the embodiments, the third gas output element includes but is not limited to a stainless steel tube.

[0134] In some of the embodiments, the second dry gas filter unit 300 includes a plurality of third gas input elements, a plurality of second dry gas filter elements 310, and a plurality of third gas output elements, and the plurality of third gas input elements, the plurality of second dry gas filter elements 310, and the plurality of third gas output elements correspond one to one.

[0135] It should be noted that the number of the second dry-type gas filter elements 310 is two, and the two second dry-type gas filter elements 310 are connected in series and in parallel with each other.

[0136] In some of the embodiments, the number of the second dry gas filter elements 310 may be 3, 4, etc., that is, the number of the second dry gas filter elements 310 may be set according to actual processing requirements, and no excessive restrictions are imposed herein.

[0137] It should be noted that when the two second dry gas filter elements 310 are connected in parallel, the two second dry gas filter elements 310 can realize separate processing of semiconductor epitaxial gas; in addition, when gaps appear during the semiconductor epitaxial gas processing, the two second dry gas filter elements 310 can realize uninterrupted operation during the gas processing process.

[0138] It should be noted that, when two second dry gas filter elements 310 are connected in series, the two second dry gas filter elements 310 can realize multi-stage processing of semiconductor epitaxial gas, that is, the semiconductor epitaxial gas processed by one second dry gas filter element 310 can be passed into another second dry gas filter element 310 for secondary processing.

[0139] In some of the embodiments, the number of the third gas input elements matches the number of the second dry gas filter elements 310 ; it should be understood that the number of the third gas input elements is the same as the number of the second dry gas filter elements 310 .

[0140] In some of the embodiments, the number of the third gas output elements matches the number of the second dry gas filter elements 310 ; it should be understood that the number of the third gas output elements is the same as the number of the second dry gas filter elements 310 .

[0141] Furthermore, the second dry gas filter unit 300 further includes at least one third series element, wherein the first end and the second end of the third series element are respectively connected to the two second dry gas filter elements 310 for connecting the two second dry gas filter elements 310 in series.

[0142] Specifically, a first end of the third series element is in communication with one second dry-type gas filter element 310 , and a second end of the third series element is in communication with a third gas input element on another second dry-type gas filter element 310 .

[0143] In some of these embodiments, the third series element includes, but is not limited to, a stainless steel tube.

[0144] In some embodiments, the number of the third series elements matches the number of the second dry gas filter elements 310; it should be understood that the number of the third series elements is not less than the number of the second dry gas filter elements 310. For example, if there are three second dry gas filter elements 310, there may be three third series elements (i.e., the first end of each third series element is connected to a second dry gas filter element 310, and the second end of each third series element is connected to the remaining two second dry gas filter elements 310), or there may be six third series elements (i.e., the first end of each third series element is connected to only one second dry gas filter element 310, and the second end of each third series element is connected to only one second dry gas filter element 310).

[0145] Furthermore, the second dry gas filter unit 300 further includes at least one third bypass element, wherein a first end of the third bypass element is connected to a third gas input element, and the third bypass element is connected to the third gas output element for pressure relief.

[0146] In some of the embodiments, the third bypass element includes, but is not limited to, a stainless steel tube.

[0147] In some of the embodiments, the number of the third bypass elements matches the number of the second dry gas filter elements 310 ; it should be understood that the number of the third bypass elements is the same as the number of the second dry gas filter elements 310 .

[0148] Furthermore, the second dry gas filter unit 300 further includes at least one ninth control valve element 320 and at least one tenth control valve element 330. The ninth control valve element 320 is disposed at the third gas input element to control the flow of the third gas input element; the tenth control valve element 330 is disposed at the third gas output element to control the flow of the third gas output element.

[0149] Specifically, the ninth control valve element 320 is provided in a three-way valve structure, and the ninth control valve element 320 is provided at the connection point between the third gas input element and the third series element.

[0150] In some of the embodiments, the number of the ninth control valve elements 320 matches the number of the third gas input elements; it should be understood that the number of the ninth control valve elements 320 is the same as the number of the third gas input elements.

[0151] In some of the embodiments, the ninth control valve component 320 includes, but is not limited to, a diaphragm valve.

[0152] In some of the embodiments, the number of the tenth control valve elements 330 matches the number of the third gas output elements; it should be understood that the number of the tenth control valve elements 330 is the same as the number of the third gas output elements.

[0153] In some of the embodiments, the tenth control valve element 330 includes, but is not limited to, a diaphragm valve.

[0154] Furthermore, the second dry-type gas filter unit 300 further includes at least one eleventh control valve element 340. The eleventh control valve element 340 is disposed on the third series element to control the flow of the third series element.

[0155] In some of the embodiments, the number of the eleventh control valve elements 340 matches the number of the third series elements; it should be understood that the number of the eleventh control valve elements 340 is the same as the number of the third series elements.

[0156] In some of the embodiments, the eleventh control valve element 340 includes, but is not limited to, a diaphragm valve.

[0157] Furthermore, the second dry-type gas filter unit 300 further includes at least one twelfth control valve element 350. The twelfth control valve element 350 is disposed in the third bypass element to control the flow of the third bypass element.

[0158] In some of the embodiments, the number of the twelfth control valve elements 350 matches the number of the third bypass elements; it should be understood that the number of the twelfth control valve elements 350 is the same as the number of the third bypass elements.

[0159] In some of the embodiments, the twelfth control valve element 350 includes, but is not limited to, a diaphragm valve.

[0160] Furthermore, the second dry-type gas filter unit 300 further includes at least one fifth monitoring element 360 . The fifth monitoring element 360 is in communication with the second dry-type gas filter element 310 and is used to monitor the pressure inside the second dry-type gas filter element 310 .

[0161] In some of the embodiments, the number of the fifth monitoring elements 360 matches the number of the second dry gas filter elements 310 ; it should be understood that the number of the fifth monitoring elements 360 is the same as the number of the second dry gas filter elements 310 .

[0162] In some of these embodiments, the fifth monitoring element 360 includes but is not limited to a pressure sensor.

[0163] Furthermore, the second dry-type gas filter unit 300 further includes at least one sixth monitoring element 370 . The sixth monitoring element 370 is in communication with the second dry-type gas filter element 310 and is used to monitor the temperature inside the second dry-type gas filter element 310 .

[0164] In some of the embodiments, the number of the sixth monitoring elements 370 matches the number of the second dry gas filter elements 310 ; it should be understood that the number of the sixth monitoring elements 370 is the same as the number of the second dry gas filter elements 310 .

[0165] In some of the embodiments, the sixth monitoring element 370 includes but is not limited to a temperature sensor.

[0166] like Figure 8 As shown, the emission recovery unit 400 includes a first hydrogen delivery element and a recovery element 410. The first end of the first hydrogen delivery element is connected to the wet gas filter unit 100 and / or the first dry gas filter unit 200 and / or the second dry gas filter unit 300 for delivering hydrogen; the recovery element 410 is connected to the second end of the first hydrogen delivery element for storing hydrogen.

[0167] Specifically, the first end of the first hydrogen transport element is connected to the second end of the first gas output element (corresponding to mode (4) and mode (6)) and / or the second end of the second gas output element (corresponding to mode (2) and mode (5)) and / or the second end of the third gas output element (corresponding to mode (1) and mode (6)).

[0168] In some of these embodiments, the first hydrogen delivery element includes, but is not limited to, a stainless steel tube.

[0169] In some of these embodiments, the recovery element 410 includes, but is not limited to, a cylinder.

[0170] Furthermore, the emission recovery unit 400 further includes at least one second hydrogen delivery element, at least one vacuum element 420 and at least one emission element. The two ends of the second hydrogen delivery element are respectively connected to the first hydrogen delivery element for delivering hydrogen; the vacuum element 420 is arranged on the second hydrogen delivery element for forming a vacuum negative pressure in the second hydrogen delivery element; the first end of the emission element is connected to the second hydrogen delivery element, and the second end of the emission element is connected to the waste gas treatment equipment for delivering waste gas.

[0171] It should be noted that the number of the second hydrogen gas delivery elements is two, and the two second hydrogen gas delivery elements are arranged in parallel with the first hydrogen gas delivery element.

[0172] In some of the embodiments, the number of the second hydrogen delivery elements may also be 3, etc., that is, the number of the second hydrogen delivery elements may be set according to actual needs.

[0173] In some of these embodiments, the second hydrogen delivery element includes, but is not limited to, a stainless steel tube.

[0174] In some embodiments, the number of vacuum elements 420 matches the number of second hydrogen delivery elements. It should be understood that the number of vacuum elements 420 is the same as the number of second hydrogen delivery elements.

[0175] In some of these embodiments, vacuum element 420 includes, but is not limited to, a vacuum pump.

[0176] In some of the embodiments, the number of the exhaust elements matches the number of the second hydrogen delivery elements. It should be understood that the number of the exhaust elements is the same as the number of the second hydrogen delivery elements.

[0177] In some of these embodiments, the discharge element includes, but is not limited to, a stainless steel tube.

[0178] Furthermore, the exhaust recovery unit 400 further includes a thirteenth control valve element 430. The thirteenth control valve element 430 is disposed on the first hydrogen delivery element to control the flow of the first hydrogen delivery element.

[0179] It should be noted that the thirteenth control valve is arranged on the first hydrogen gas transport element between the two ends of the second hydrogen gas transport element and the two connecting points of the first hydrogen gas transport element.

[0180] In some of the embodiments, the thirteenth control valve element 430 includes, but is not limited to, a diaphragm valve.

[0181] Furthermore, the exhaust recovery unit 400 further includes a fourteenth control valve element 440. The fourteenth control valve element 440 is disposed on the recovery element 410, and is used to control the flow between the recovery element 410 and the first hydrogen delivery element.

[0182] In some of the embodiments, the fourteenth control valve element 440 includes, but is not limited to, a diaphragm valve.

[0183] Furthermore, the exhaust recovery unit 400 further includes at least one fifteenth control valve element 450. The fifteenth control valve element 450 is disposed in the pipeline connected to the second hydrogen delivery element, and is used to control the flow of the second hydrogen delivery element.

[0184] In some embodiments, the number of the fifteenth control valve elements 450 matches the number of the second hydrogen delivery elements. It should be understood that the number of the fifteenth control valve elements 450 is the same as the number of the second hydrogen delivery elements.

[0185] In some of the embodiments, the fifteenth control valve element 450 includes, but is not limited to, a diaphragm valve.

[0186] Furthermore, the exhaust recovery unit 400 further includes at least one sixteenth control valve element 460. The sixteenth control valve element 460 is disposed on the exhaust element to control the flow between the exhaust element and the exhaust gas treatment device.

[0187] In some embodiments, the number of the sixteenth control valve elements 460 matches the number of the exhaust elements. It should be understood that the number of the sixteenth control valve elements 460 is the same as the number of the exhaust elements.

[0188] In some of these embodiments, the sixteenth control valve element 460 includes, but is not limited to, a diaphragm valve.

[0189] The method of using this embodiment is described by taking method (1) as an example, as follows:

[0190] Open the first control valve element 120 to connect the upstream semiconductor process equipment with the wet gas filter element 110, and the wet gas filter element 110 filters the semiconductor epitaxial gas to remove hydrogen chloride and trichlorosilane in the semiconductor epitaxial gas;

[0191] Open the second control valve element 130 and the fifth control valve element 220, so that the wet gas filter element 110 is connected to the first dry gas filter element 210, and the first dry gas filter element 210 filters the semiconductor epitaxial gas to remove phosphine and diborane in the semiconductor epitaxial gas;

[0192] Open the sixth control valve element 230 and the ninth control valve element 320, so that the first dry gas filter element 210 is connected to the second dry gas filter element 310, and the second dry gas filter element 310 filters the semiconductor epitaxial gas to remove arsine in the semiconductor epitaxial gas;

[0193] The tenth control valve element 330 , the thirteenth control valve element 430 , and the fourteenth control valve element 440 are opened so that the second dry gas filter element 310 is connected to the recovery element 410 , so that the hydrogen obtained by processing the wet gas filter element 110 , the first dry gas filter element 210 , and the second dry gas filter element 310 is stored in the recovery element 410 .

[0194] It should be noted that, when the semiconductor epitaxial gas needs to pass through multiple wet gas filter elements 110 for multi-stage processing, the third control valve element 140 is opened so that the multiple wet gas filter elements 110 are connected in series;

[0195] It should be noted that, when the internal pressure of the wet gas filter element 110 monitored by the first monitoring element 160 exceeds the threshold, the fourth control valve element 150 and the sixteenth control valve element 460 are opened to release the pressure of the wet gas filter element 110;

[0196] It should be noted that, when the semiconductor epitaxial gas needs to pass through multiple first dry gas filter elements 210 for multi-stage processing, the seventh control valve element 240 is opened so that the multiple first dry gas filter elements 210 are connected in series;

[0197] It should be noted that, when the internal pressure of the first dry gas filter element 210 monitored by the third monitoring element 260 exceeds the threshold, the eighth control valve element 250 and the sixteenth control valve element 460 are opened to release the pressure of the first dry gas filter element 210;

[0198] It should be noted that, when the semiconductor epitaxial gas needs to pass through multiple second dry gas filter elements 310 for multi-stage processing, the eleventh control valve element 340 is opened so that the multiple second dry gas filter elements 310 are connected in series;

[0199] It should be noted that, when the internal pressure of the second dry gas filter element 310 monitored by the fifth monitoring element 360 exceeds the threshold, the twelfth control valve element 350 and the sixteenth control valve element 460 are opened to release the pressure of the second dry gas filter element 310;

[0200] It should be noted that when the delivery pressure in the first hydrogen delivery element is insufficient, the vacuum element 420 and the fifteenth control valve element 450 are opened so that all the hydrogen obtained by processing the wet gas filter element 110, the first dry gas filter element 210, and the second dry gas filter element 310 can be delivered to the recovery element 410.

[0201] The usage of methods (2) to (6) is basically the same as that of method (1), with only the processing order being different, which will not be repeated here.

[0202] The advantage of this embodiment is that by connecting the upstream semiconductor process equipment with the wet gas filtration unit, the first dry gas filtration unit, and the second dry gas filtration unit, and the order in which the wet gas filtration unit, the first dry gas filtration unit, and the second dry gas filtration unit are connected can be arbitrarily arranged according to actual needs, so that impurities such as hydrogen chloride, trichlorosilane, phosphine, diborane, and arsine in the semiconductor epitaxial gas can be removed and hydrogen can be obtained, and then the semiconductor epitaxial gas can be recycled and the semiconductor epitaxial gas can be purified to meet the emission requirements.

[0203] Example 2

[0204] This embodiment is a variation of the first embodiment. The main difference between this embodiment and the first embodiment is that the semiconductor epitaxial gas processing equipment further includes a gas-liquid separation unit 500 .

[0205] like Fig. 9 As shown, the semiconductor epitaxial gas processing equipment further includes a gas-liquid separation unit 500. The gas-liquid separation unit 500 is disposed downstream of the wet gas filter unit 100 and is used to perform gas-liquid separation on the semiconductor epitaxial gas processed by the wet gas filter element 110.

[0206] In this embodiment, the semiconductor epitaxial gas processing equipment includes the following methods, in order of gas flow:

[0207] (1) Upstream semiconductor process equipment → wet gas filtration unit 100 → gas-liquid separation unit 500 → first dry gas filtration unit 200 → second dry gas filtration unit 300 → discharge recovery unit 400;

[0208] (2) Upstream semiconductor process equipment → wet gas filtration unit 100 → gas-liquid separation unit 500 → second dry gas filtration unit 300 → first dry gas filtration unit 200 → discharge recovery unit 400;

[0209] (3) Upstream semiconductor process equipment → first dry gas filtration unit 200 → wet gas filtration unit 100 → gas-liquid separation unit 500 → second dry gas filtration unit 300 → discharge recovery unit 400;

[0210] (4) Upstream semiconductor process equipment → first dry gas filtration unit 200 → second dry gas filtration unit 300 → wet gas filtration unit 100 → gas-liquid separation unit 500 → discharge recovery unit 400;

[0211] (5) Upstream semiconductor process equipment → second dry gas filtration unit 300 → wet gas filtration unit 100 → gas-liquid separation unit 500 → first dry gas filtration unit 200 → discharge recovery unit 400;

[0212] (6) Upstream semiconductor process equipment → second dry gas filtration unit 300 → first dry gas filtration unit 200 → wet gas filtration unit 100 → gas-liquid separation unit 500 → emission recovery unit 400.

[0213] In the present invention, method (1) is taken as an example for description.

[0214] Specifically, the gas-liquid separation unit 500 includes a fourth gas input element, a gas-liquid separation element, a fourth gas output element and a liquid delivery element. The first end of the fourth gas input element is connected to the wet gas filter unit 100 for delivering the semiconductor epitaxial gas processed by the wet gas filter element 110; the gas-liquid separation element is connected to the second end of the fourth gas input element for performing gas-liquid separation on the semiconductor epitaxial gas processed by the wet gas filter element 110; the first end of the fourth gas output element is connected to the gas-liquid separation element, and the second end of the fourth gas output element is connected to the first dry gas filter unit 200 and / or the second dry gas filter unit 300 and / or the emission recovery unit 400 for delivering gas; the first end of the liquid delivery element is connected to the gas-liquid separation element, and the second end of the liquid delivery element is connected to the wet gas filter unit 100 for delivering liquid.

[0215] Specifically, the first end of the fourth gas input element is connected to the second end of the first gas output element; the second end of the fourth gas output element is connected to the first end of the second gas input element (corresponding to method (1) and method (5)) and / or the first end of the third gas input element (corresponding to method (2) and method (3)) and / or the first hydrogen input element (corresponding to method (4) and method (6)); the second end of the liquid delivery element is connected to the first gas input element.

[0216] In some of the embodiments, the fourth gas input element includes but is not limited to a stainless steel tube.

[0217] In some of the embodiments, the gas-liquid separation element includes but is not limited to a centrifugal gas-liquid separator.

[0218] In some of the embodiments, the fourth gas output element includes but is not limited to a stainless steel tube.

[0219] In some of these embodiments, the liquid transport element includes, but is not limited to, a stainless steel tube.

[0220] The method of using this embodiment is as follows:

[0221] The semiconductor epitaxial gas treated by the wet gas filter element 110 contains a large amount of water vapor. The semiconductor epitaxial gas treated by the wet gas filter element 110 is passed into the gas-liquid separation element through the fourth gas input element to filter the water vapor therein to obtain dry gas and liquid. The dry gas is transported to the first dry gas filter element 210 or the second dry gas filter element 310 or the recovery element 410 through the fourth gas output element, and the liquid is transported to the first gas input element through the liquid delivery element, and the liquid is transported back to the wet gas filter element 110 for further treatment.

[0222] The advantage of this embodiment is that by connecting the gas-liquid separation unit downstream of the wet gas filtration unit, the water vapor contained in the semiconductor epitaxial gas treated by the wet gas filtration element can be separated, and the separated liquid can be circulated to the wet gas filtration unit for circulation treatment, thereby improving the effect of semiconductor epitaxial gas treatment.

[0223] Example 3

[0224] This embodiment is a variation of Embodiments 1 to 2. The main difference between this embodiment and Embodiments 1 to 2 is that the semiconductor epitaxial gas processing equipment further includes a purge unit 600 .

[0225] like Fig.10 As shown, the semiconductor epitaxial gas processing equipment further includes a purge unit 600. The purge unit 600 is respectively connected to the wet gas filter unit 100, the first dry gas filter unit 200, and the second dry gas filter unit 300 to purge the entire equipment.

[0226] like Fig.11As shown, the purge unit 600 includes a first purge gas input element, a first purge gas output element, a second purge gas input element, a second purge gas output element, a third purge gas input element and a third purge gas output element. The first end of the first purge gas input element is connected to the purge gas source, and the second end of the first purge gas input element is connected to the wet gas filter unit 100 for conveying the purge gas; the first end of the first purge gas output element is connected to the wet gas filter unit 100, and the second end of the first purge gas output element is connected to the emission recovery unit 400 for conveying the exhaust gas; the first end of the second purge gas input element is connected to the purge gas source, and the second end of the second purge gas input element is connected to the first dry gas filter unit 200 for conveying the purge gas; The first end of the purge gas output element is connected to the first dry gas filter unit 200, and the second end of the second purge gas output element is connected to the emission recovery unit 400 for conveying waste gas; the first end of the third purge gas input element is connected to the purge gas source, and the second end of the third purge gas input element is connected to the second dry gas filter unit 300 for conveying purge gas; the first end of the third purge gas output element is connected to the second dry gas filter unit 300, and the second end of the third purge gas output element is connected to the emission recovery unit 400 for conveying waste gas.

[0227] Specifically, the second end of the first purge gas input element is connected to the first gas input element; the first end of the first purge gas output element is connected to the first gas output element; the second end of the second purge input element is connected to the second gas input element; the first end of the second purge gas output element is connected to the second gas output element; the second end of the third purge input element is connected to the third gas input element; and the first end of the third purge gas output element is connected to the third gas output element.

[0228] In some of the embodiments, the first purge gas input element includes, but is not limited to, a stainless steel pipe.

[0229] In some of the embodiments, the first purge gas output element includes but is not limited to a stainless steel pipe.

[0230] In some of the embodiments, the second purge gas input element includes but is not limited to a stainless steel pipe.

[0231] In some of the embodiments, the second purge gas output element includes but is not limited to a stainless steel pipe.

[0232] In some of the embodiments, the third purge gas input element includes but is not limited to a stainless steel tube.

[0233] In some of the embodiments, the third purge gas output element includes but is not limited to a stainless steel tube.

[0234] It should be noted that the first ends of the first purge gas input element, the second purge gas input element, and the third purge gas input element are connected in parallel to the purge gas source.

[0235] It should be noted that the second ends of the first purge gas output element, the second purge gas output element, and the third purge gas output element are connected in parallel to the exhaust element.

[0236] Further, the purge unit 600 further includes a seventeenth control valve element 610, an eighteenth control valve element 620, a nineteenth control valve element 630, a twentieth control valve element 640, a twenty-first control valve element 650 and a twenty-second control valve element 660. The seventeenth control valve element 610 is disposed at the first purge gas input element to control the flow of the first purge gas input element; the eighteenth control valve element 620 is disposed at the first purge gas output element to control the flow of the first purge gas output element; the nineteenth control valve element 630 is disposed at the second purge gas input element to control the flow of the second purge gas input element; the twentieth control valve element 640 is disposed at the second purge gas output element to control the flow of the second purge gas output element; the twenty-first control valve element 650 is disposed at the third purge gas input element to control the flow of the third purge gas input element; and the twenty-second control valve element 660 is disposed at the third purge gas output element to control the flow of the third purge gas output element.

[0237] In some of the embodiments, the seventeenth control valve element 610 includes, but is not limited to, a diaphragm valve.

[0238] In some of the embodiments, the eighteenth control valve element 620 includes, but is not limited to, a diaphragm valve.

[0239] In some of the embodiments, the nineteenth control valve element 630 includes, but is not limited to, a diaphragm valve.

[0240] In some of the embodiments, the twentieth control valve element 640 includes, but is not limited to, a diaphragm valve.

[0241] In some of these embodiments, the twenty-first control valve element 650 includes, but is not limited to, a diaphragm valve.

[0242] In some of the embodiments, the twenty-second control valve element 660 includes, but is not limited to, a diaphragm valve.

[0243] The method of using this embodiment is as follows:

[0244] When it is necessary to purge the entire equipment, open the first control valve element 120, the second control valve element 130, the fifth control valve element 220, the sixth control valve element 230, the ninth control valve element 320, the tenth control valve element 330, the seventeenth control valve element 610, the eighteenth control valve element 620, the nineteenth control valve element 630, the twentieth control valve element 640, the twenty-first control valve element 650 and the twenty-second control valve element 660, so that the purge gas source is connected to the wet gas filter element 110, the first dry gas filter element 210, the second dry gas filter element 310 and the exhaust gas treatment equipment respectively, so that the pipelines and equipment can be purged to ensure the cleanliness of the pipelines and the equipment.

[0245] The advantage of this embodiment is that by connecting the purge unit to the wet gas filter unit, the first dry gas filter unit, and the second dry gas filter unit respectively, the pipeline and the equipment can be purged to ensure the cleanliness of the pipeline and the equipment.

[0246] Example 4

[0247] This embodiment relates to a semiconductor epitaxial gas processing method of the present invention, which is applied to the semiconductor epitaxial gas processing equipment as described in Embodiments 1 to 3.

[0248] A semiconductor epitaxial gas processing method, comprising:

[0249] The wet gas filtration unit 100 obtains semiconductor epitaxial gas and filters the semiconductor epitaxial gas to remove hydrogen chloride and trichlorosilane;

[0250] The first dry gas filtration unit 200 obtains semiconductor epitaxial gas or semiconductor epitaxial gas processed by the wet gas filtration unit 100, and filters the semiconductor epitaxial gas to remove phosphine and diborane;

[0251] The second dry gas filter unit 300 obtains the semiconductor epitaxial gas or the semiconductor epitaxial gas processed by the wet gas filter unit 100 or the semiconductor epitaxial gas processed by the first dry gas filter unit 200, and filters the semiconductor epitaxial gas to remove arsine;

[0252] The emission recovery unit 400 discharges the waste gas generated by the wet gas filter unit 100, the first dry gas filter unit 200, and the second dry gas filter unit 300, and recovers the hydrogen generated by the wet gas filter unit 100, the first dry gas filter unit 200, and the second dry gas filter unit 300.

[0253] In some of the embodiments, the semiconductor epitaxial gas processing method further comprises:

[0254] The gas-liquid separation unit obtains the semiconductor epitaxial gas processed by the wet gas filtration unit 100, performs gas-liquid separation on the semiconductor epitaxial gas, and the obtained dry gas is transported to the downstream equipment for processing or transported to the emission recovery unit 400 for recovery or discharge, and the obtained liquid is re-transported to the wet gas filtration unit 100 for circulation treatment.

[0255] More specifically, the semiconductor epitaxial gas processing method of this embodiment is described as follows, taking method (1) as an example:

[0256] 1. Open the first control valve element 120 to connect the upstream semiconductor process equipment with the wet gas filter element 110 to remove hydrogen chloride and trichlorosilane in the semiconductor epitaxial gas;

[0257] 2. The semiconductor epitaxial gas processed by the wet gas filter element 110 contains a large amount of water vapor. The semiconductor epitaxial gas processed by the wet gas filter element 110 is passed into the gas-liquid separation element through the fourth gas input unit to filter the water vapor therein to obtain dry gas and liquid. The dry gas is transported to the first dry gas filter element 210 through the fourth gas output element, and the liquid is transported to the first gas input element through the liquid transport element, and the liquid is transported to the wet gas filter element 110 for further treatment.

[0258] 3. Open the second control valve element 130 and the fifth control valve element 220 to connect the wet gas filter element 110 to the first dry gas filter element 210 to remove phosphine and diborane from the semiconductor epitaxial gas;

[0259] 4. Open the sixth control valve element 230 and the ninth control valve element 320 to connect the first dry gas filter element 210 with the second dry gas filter element 310 to remove arsine in the semiconductor epitaxial gas;

[0260] 5. Open the tenth control valve element 330, the thirteenth control valve element 430, and the fourteenth control valve element 440, so that the second dry gas filter element 310 is connected to the recovery element 410, so that the hydrogen obtained by the treatment of the wet gas filter element 110, the first dry gas filter element 210, and the second dry gas filter element 310 is stored in the recovery element 410;

[0261] 6. When the semiconductor epitaxial gas needs to be processed in multiple stages through multiple wet gas filter elements 110, the third control valve element 140 is opened so that the multiple wet gas filter elements 110 are connected in series;

[0262] 7. When the internal pressure of the wet gas filter element 110 monitored by the first monitoring element 160 exceeds a threshold, the fourth control valve element 150 and the sixteenth control valve element 460 are opened to release the pressure of the wet gas filter element 110;

[0263] 8. When the semiconductor epitaxial gas needs to pass through a plurality of first dry gas filter elements 210 for multi-stage processing, the seventh control valve element 240 is opened so that the plurality of first dry gas filter elements 210 are connected in series;

[0264] 9. When the internal pressure of the first dry gas filter element 210 monitored by the third monitoring element 260 exceeds a threshold, the eighth control valve element 250 and the sixteenth control valve element 460 are opened to release the pressure of the first dry gas filter element 210;

[0265] 10. When the semiconductor epitaxial gas needs to pass through a plurality of second dry gas filter elements 310 for multi-stage processing, the eleventh control valve element 340 is opened so that the plurality of second dry gas filter elements 310 are connected in series;

[0266] 11. When the internal pressure of the second dry gas filter element 310 monitored by the fifth monitoring element 360 exceeds a threshold, the twelfth control valve element 350 and the sixteenth control valve element 460 are opened to release the pressure of the second dry gas filter element 310;

[0267] 12. When the delivery pressure in the first hydrogen delivery element is insufficient, the vacuum element 420 and the fifteenth control valve element 450 are opened, so that the hydrogen obtained by the wet gas filter element 110, the first dry gas filter element 210, and the second dry gas filter element 310 can be fully delivered to the recovery element 410;

[0268] 13. Open the first control valve element 120, the second control valve element 130, the fifth control valve element 220, the sixth control valve element 230, the ninth control valve element 320, the tenth control valve element 330, the seventeenth control valve element 610, the eighteenth control valve element 620, the nineteenth control valve element 630, the twentieth control valve element 640, the twenty-first control valve element 650 and the twenty-second control valve element 660, so that the purge gas source is connected to the wet gas filter element 110, the first dry gas filter element 210, the second dry gas filter element 310 and the exhaust gas treatment equipment, respectively, so that the pipelines and equipment can be purged.

[0269] The technical effects of this embodiment are substantially the same as those of Embodiments 1 to 3, and will not be described in detail herein.

[0270] Example 5

[0271] This embodiment relates to a semiconductor process system in the present invention.

[0272] A semiconductor process system includes the semiconductor epitaxial gas processing equipment as described in Examples 1 to 3.

[0273] Furthermore, the semiconductor process system also includes a purge gas source, upstream semiconductor process equipment, and waste gas treatment equipment. The purge gas source is connected to the wet gas filter unit 100, the first dry gas filter unit 200, and the second dry gas filter unit 300 respectively; the upstream semiconductor process equipment can be connected to the wet gas filter unit 100 or the first dry gas filter unit 200 or the second dry gas filter unit 300; the waste gas treatment equipment is connected to the emission recovery unit 400.

[0274] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0275] The above-mentioned embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the attached claims.

Claims

1. A semiconductor epitaxial gas processing device, characterized in that: include: A wet gas filtration unit, the wet gas filtration unit being in communication with an upstream semiconductor process device and used for filtering semiconductor epitaxial gas to remove hydrogen chloride and trichlorosilane; a first dry gas filtration unit, the first dry gas filtration unit being in communication with an upstream semiconductor process device and / or the wet gas filtration unit, and being used for filtering semiconductor epitaxial gas to remove phosphine and diborane; a second dry gas filtration unit, the second dry gas filtration unit being in communication with an upstream semiconductor process device and / or the wet gas filtration unit and / or the first dry gas filtration unit, and being used for filtering semiconductor epitaxial gas to remove arsine; An emission recovery unit, which is connected to the wet gas filter unit and / or the first dry gas filter unit and / or the second dry gas filter unit, and is used to discharge the waste gas generated by the wet gas filter unit, the first dry gas filter unit, and the second dry gas filter unit, and to recover the hydrogen generated by the wet gas filter unit, the first dry gas filter unit, and the second dry gas filter unit.

2. The semiconductor epitaxial gas processing equipment according to claim 1, characterized in that: The wet gas filtration unit comprises: at least one first gas input element, a first end of which is connected to an upstream semiconductor process equipment and / or the first dry gas filter unit and / or the second dry gas filter unit for conveying semiconductor epitaxial gas; At least one wet gas filter element, the wet gas filter element being in communication with the second end of the first gas input element and being used for filtering semiconductor epitaxial gas to remove hydrogen chloride and trichlorosilane; at least one first gas output element, a first end of the first gas output element is connected to the wet gas filter element, and a second end of the first gas output element is connected to the first dry gas filter unit and / or the second dry gas filter unit and / or the emission recovery unit, for conveying the semiconductor epitaxial gas processed by the wet gas filter element; and / or The first dry gas filtration unit comprises: at least one second gas input element, a first end of which is connected to an upstream semiconductor process equipment and / or the wet gas filter unit and / or the second dry gas filter unit for conveying semiconductor epitaxial gas; At least one first dry gas filter element, the first dry gas filter element is connected to the second end of the second gas input element, and is used for filtering semiconductor epitaxial gas to remove phosphine and diborane; at least one second gas output element, a first end of the second gas output element is connected to the first dry gas filter element, a second end of the second gas output element is connected to the wet gas filter unit and / or the second dry gas filter unit and / or the emission recovery unit, for conveying the semiconductor epitaxial gas processed by the first dry gas filter element; and / or The second dry gas filtration unit comprises: at least one third gas input element, a first end of which is connected to an upstream semiconductor process equipment and / or the wet gas filter unit and / or the first dry gas filter unit for conveying semiconductor epitaxial gas; at least one second dry gas filter element, the second dry gas filter element being in communication with the second end of the third gas input element and being used for filtering semiconductor epitaxial gas to remove arsine; at least one third gas output element, a first end of the third gas output element is connected to the second dry gas filter element, a second end of the third gas output element is connected to the wet gas filter unit and / or the first dry gas filter unit and / or the emission recovery unit, and is used to transport the semiconductor epitaxial gas processed by the second dry gas filter element; and / or The emission recovery unit comprises: a first hydrogen delivery element, wherein a first end of the first hydrogen delivery element is in communication with the wet gas filter unit and / or the first dry gas filter unit and / or the second dry gas filter unit for delivering hydrogen; A recovery element is communicated with the second end of the first hydrogen delivery element and is used for storing hydrogen.

3. The semiconductor epitaxial gas processing equipment according to claim 2, characterized in that: The wet gas filtration unit comprises a plurality of the first gas input elements, a plurality of the wet gas filtration elements, and a plurality of the first gas output elements, and the plurality of the first gas input elements, the plurality of the wet gas filtration elements, and the plurality of the first gas output elements correspond to each other one by one; and / or The first dry gas filter unit comprises a plurality of the second gas input elements, a plurality of the first dry gas filter elements, and a plurality of the second gas output elements, and the plurality of the second gas input elements, the plurality of the first dry gas filter elements, and the plurality of the second gas output elements correspond to each other one by one; and / or The second dry gas filter unit includes a plurality of the third gas input elements, a plurality of the second dry gas filter elements, and a plurality of the third gas output elements, and the plurality of the third gas input elements, the plurality of the second dry gas filter elements, and the plurality of the third gas output elements correspond one to one.

4. The semiconductor epitaxial gas processing equipment according to claim 3, characterized in that: The wet gas filtration unit also includes: at least one first series connection element, wherein the first end and the second end of the first series connection element are respectively connected to the two wet gas filter elements, so as to connect the two wet gas filter elements in series; and / or The wet gas filtration unit also includes: at least one first bypass element, a first end of the first bypass element being connected to the first gas input element, and a second end of the first bypass element being connected to the first gas output element for pressure relief; and / or The first dry gas filtration unit also includes: a plurality of second series-connected elements, wherein the first ends and the second ends of the plurality of second series-connected elements are respectively connected to the two first dry-type gas filter elements, so as to connect the two first dry-type gas filter elements in series; and / or The first dry gas filtration unit also includes: at least one second bypass element, a first end of the second bypass element being in communication with the second gas input element, and a second end of the second bypass element being in communication with the second gas output element for pressure relief; and / or The second dry gas filtration unit also includes: at least one third series connection element, wherein a first end and a second end of the third series connection element are respectively connected to two of the second dry-type gas filter elements, so as to connect the two second dry-type gas filter elements in series; and / or The second dry gas filtration unit also includes: At least one third bypass element, a first end of the third bypass element is communicated with the third gas input element, and a second end of the third bypass element is communicated with the third gas output element for pressure relief.

5. The semiconductor epitaxial gas processing equipment according to any one of claims 2 to 4, characterized in that: The wet gas filtration unit also includes: at least one first control valve element, the first control valve element being disposed at the first gas input element and being used to control the flow of the first gas input element; The wet gas filtration unit also includes: at least one second control valve element, the second control valve element being arranged at the first gas output element for controlling the flow of the first gas output element; and / or The wet gas filtration unit also includes: at least one third control valve element, the third control valve element being disposed in the first series element and being used to control the flow of the first series element; The wet gas filtration unit also includes: at least one fourth control valve element, the fourth control valve element being arranged in the first bypass element for controlling the flow of the first bypass element; and / or The wet gas filtration unit also includes: at least one first monitoring element, the first monitoring element being in communication with the wet gas filter element and configured to monitor the pressure inside the wet gas filter element; and / or The wet gas filtration unit also includes: at least one second monitoring element, the second monitoring element being in communication with the wet gas filter element and configured to monitor the temperature inside the wet gas filter element; and / or The first dry gas filtration unit also includes: at least one fifth control valve element, the fifth control valve element being disposed at the second gas input element and being used to control the flow of the second gas input element; at least one sixth control valve element, the sixth control valve element being disposed at the second gas output element and being used to control the flow of the second gas output element; and / or The first dry gas filtration unit also includes: at least one seventh control valve element, the seventh control valve element being arranged in the second series element for controlling the flow of the second series element; and / or The first dry gas filtration unit also includes: at least one eighth control valve element, the eighth control valve element being disposed in the second bypass element for controlling the flow of the second bypass element; and / or The first dry gas filtration unit also includes: at least one third monitoring element, the third monitoring element being in communication with the first dry gas filter element and configured to monitor the pressure inside the first dry gas filter element; and / or The first dry gas filtration unit also includes: at least one fourth monitoring element, the fourth monitoring element being in communication with the first dry-type gas filter element and configured to monitor the temperature inside the first dry-type gas filter element; and / or The second dry gas filtration unit also includes: at least one ninth control valve element, the ninth control valve element being arranged at the third gas input element for controlling the flow of the third gas input element; and / or The second dry gas filtration unit also includes: at least one tenth control valve element, the tenth control valve element being disposed at the third gas output element and being used to control the flow of the third gas output element; and / or The second dry gas filtration unit also includes: at least one eleventh control valve element, the eleventh control valve element being arranged in the third series element for controlling the flow of the third series element; and / or The second dry gas filtration unit also includes: at least one twelfth control valve element, the twelfth control valve element being disposed in the third bypass element for controlling the flow of the third bypass element; and / or The second dry gas filtration unit also includes: at least one fifth monitoring element, the fifth monitoring element being in communication with the second dry gas filter element and configured to monitor the pressure inside the second dry gas filter element; and / or The second dry gas filtration unit also includes: at least one sixth monitoring element, the sixth monitoring element being in communication with the second dry gas filter element and configured to monitor the temperature inside the second dry gas filter element; and / or The emission recovery unit also includes: at least one second hydrogen delivery element, two ends of which are respectively connected to the first hydrogen delivery element for delivering hydrogen; at least one vacuum element, the vacuum element being disposed on the second hydrogen delivery element and used for forming a vacuum negative pressure on the second hydrogen delivery element; at least one discharge element, a first end of the discharge element being in communication with the second hydrogen delivery element, and a second end of the discharge element being in communication with an exhaust gas treatment device for delivering exhaust gas; and / or The emission recovery unit also includes: a thirteenth control valve element, the thirteenth control valve element being disposed on the first hydrogen delivery element and being used to control the flow of the first hydrogen delivery element; and / or The emission recovery unit also includes: a fourteenth control valve element, the fourteenth control valve element being disposed on the recovery element and being used to control the flow between the recovery element and the first hydrogen delivery element; and / or The emission recovery unit also includes: at least one fifteenth control valve element, the fifteenth control valve element being disposed in a pipeline connected to the second hydrogen delivery element, for controlling the flow of the second hydrogen delivery element; and / or The emission recovery unit also includes: At least one sixteenth control valve element, the sixteenth control valve element is arranged on the emission element, and is used to control the flow between the emission element and the exhaust gas treatment device.

6. The semiconductor epitaxial gas processing equipment according to any one of claims 1 to 5, characterized in that: Also includes: A gas-liquid separation unit, the gas-liquid separation unit being arranged downstream of the wet gas filtration unit and used for performing gas-liquid separation on the semiconductor epitaxial gas processed by the wet gas filtration element; and / or A purge unit is connected to the wet gas filter unit, the first dry gas filter unit, and the second dry gas filter unit respectively, and is used to purge the entire device.

7. The semiconductor epitaxial gas processing equipment according to claim 6, characterized in that: The gas-liquid separation unit comprises: a fourth gas input element, a first end of which is in communication with the wet gas filter unit and is used for conveying semiconductor epitaxial gas processed by the wet gas filter element; a gas-liquid separation element, the gas-liquid separation element being in communication with the second end of the fourth gas input element and being used for performing gas-liquid separation on the semiconductor epitaxial gas processed by the wet gas filter element; a fourth gas output element, wherein a first end of the fourth gas output element is in communication with the gas-liquid separation element, and a second end of the fourth gas output element is in communication with the first dry gas filter unit and / or the second dry gas filter unit and / or the emission recovery unit, for conveying gas; a liquid conveying element, wherein a first end of the liquid conveying element is in communication with the gas-liquid separation element, and a second end of the liquid conveying element is in communication with the wet gas filtration unit, for conveying liquid; and / or The purge unit comprises: a first purge gas input element, wherein a first end of the first purge gas input element is connected to a purge gas source, and a second end of the first purge gas input element is connected to the wet gas filtration unit for delivering purge gas; a first purge gas output element, wherein a first end of the first purge gas output element is in communication with the wet gas filtration unit, and a second end of the first purge gas output element is in communication with the exhaust recovery unit for conveying exhaust gas; a second purge gas input element, wherein a first end of the second purge gas input element is in communication with a purge gas source, and a second end of the second purge gas input element is in communication with the first dry gas filter unit for delivering purge gas; a second purge gas output element, wherein a first end of the second purge gas output element is in communication with the first dry gas filter unit, and a second end of the second purge gas output element is in communication with the exhaust recovery unit for conveying exhaust gas; a third purge gas input element, wherein a first end of the third purge gas input element is connected to a purge gas source, and a second end of the third purge gas input element is connected to the second dry gas filter unit for delivering purge gas; A third purge gas output element, a first end of which is connected to the second dry gas filter unit, and a second end of which is connected to the exhaust recovery unit, is used to transport the exhaust gas.

8. The semiconductor epitaxial gas processing equipment according to claim 7, characterized in that: The purge unit also includes: a seventeenth control valve element, the seventeenth control valve element being disposed at the first purge gas input element and being used to control the flow of the first purge gas input element; and / or an eighteenth control valve element, the eighteenth control valve element being disposed at the first purge gas output element and being used to control the flow of the first purge gas output element; and / or a nineteenth control valve element, the nineteenth control valve element being disposed at the second purge gas input element and being used for controlling the flow of the second purge gas input element; and / or a twentieth control valve element, the twentieth control valve element being disposed at the second purge gas output element and being used for controlling the flow of the second purge gas output element; and / or a twenty-first control valve element, the twenty-first control valve element being disposed at the third purge gas input element and being used to control the flow of the third purge gas input element; and / or A twenty-second control valve element, the twenty-second control valve element is disposed at the third purge gas output element, and is used to control the flow of the third purge gas output element.

9. A semiconductor epitaxial gas processing method, characterized in that: include: The wet gas filtration unit obtains semiconductor epitaxial gas and filters the semiconductor epitaxial gas to remove hydrogen chloride and trichlorosilane; The first dry gas filtration unit obtains semiconductor epitaxial gas or semiconductor epitaxial gas treated by the wet gas filtration unit, and filters the semiconductor epitaxial gas to remove phosphine and diborane; The second dry gas filtration unit obtains the semiconductor epitaxial gas or the semiconductor epitaxial gas processed by the wet gas filtration unit or the semiconductor epitaxial gas processed by the first dry gas filtration unit, and filters the semiconductor epitaxial gas to remove arsine; The emission recovery unit discharges the waste gas generated by the wet gas filter unit, the first dry gas filter unit, and the second dry gas filter unit, and recovers the hydrogen generated by the wet gas filter unit, the first dry gas filter unit, and the second dry gas filter unit.

10. A semiconductor process system, characterized in that: include: A semiconductor epitaxial gas processing device as claimed in any one of claims 1 to 8.

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