Intelligent cutter system with multi-signal sensing function and manufacturing method thereof

Abstract

The invention discloses an intelligent cutter system with a multi-signal sensing function and a manufacturing method of the intelligent cutter system, and relates to the field of intelligent cutting tools for ultra-precision machining. The method comprises the steps that boron ions and sulfur ions are doped in a multi-layer gradient doping mode through a multi-step ion implantation method in a front tool nose area and a front tool face area of the single crystal diamond tool, so that the single crystal diamond tool has the conductivity of a semiconductor; the multi-layer gradient doping mode comprises shallow-layer doping, middle-layer doping and deep-layer doping, and the concentration and depth distribution of boron ions and sulfur ions can be controlled by the multi-layer gradient doping mode, so that the concentration of a tool nose area is the highest; the single crystal diamond cutter with the conduction characteristic of a semiconductor is connected with a signal processing and transmission circuit through a platinum electrode, so that the intelligent cutter capable of sensing force, temperature and vibration at the same time and monitoring the cutting state and the cutter abrasion state in real time is obtained. By means of the scheme, the cutting force, the cutting heat degree and the vibration signals in the cutting process can be accurately detected at the same time.

Description

Technical Field

[0001] The present invention relates to the technical field of ultra-precision machining intelligent cutting tools, and in particular to an intelligent tool system with a multi-signal sensing function and a manufacturing method thereof. Background Art

[0002] Ultra-precision cutting and its detection technology are the frontier areas of the current development of mechanical and manufacturing engineering disciplines. During the cutting process, real-time testing of cutting force, cutting heat, vibration signals and other signals is a key technical means to ensure the stability of the process state, tool wear and damage monitoring, and improve the accuracy of the processed surface, which directly determines the production efficiency and processing quality of the product.

[0003] In the prior art, the methods for measuring cutting force in cutting processing can be divided into direct measurement methods and indirect measurement methods. The direct measurement method usually uses a force sensor, such as a strain sensor, a piezoelectric sensor or a magnetoelectric sensor, etc., and installs the force sensor on the cutting tool or workpiece to directly measure the magnitude and direction of the cutting force. There are some limitations in the direct measurement method. For example, installing a dynamometer may change the stiffness of the process system, resulting in the inability to collect accurate cutting force signals, and the installation and debugging technology is complex and the cost is high. The indirect measurement method is to calculate the magnitude of the cutting force by measuring the changes in parameters such as spindle current, power and vibration during the cutting process, but its limitation is that it is impossible to monitor the rapid changes in cutting force in real time, and the measurement accuracy may be affected by nonlinear factors. The methods for measuring cutting heat in cutting processing can be divided into contact and non-contact methods. The contact methods include thermocouple method, thermal coating method, etc.; the non-contact methods include infrared thermal imager method, acoustic emission method, thermal imager method, etc. In the contact method, the installation of the thermocouple may affect the thermal state of the cutting area, resulting in inaccurate measurement results. The thermal sensitive coating will gradually wear during the cutting process, reducing the measurement accuracy or even failure. The non-contact method may be interfered by environmental factors. For example, the presence of chips and cutting fluid will greatly reduce the measurement accuracy of the cutting area temperature. Accelerometers are usually used as the main means to detect vibration signals in cutting processes. Accelerometers are usually installed on tools, tool holders, tool holders or workpieces. Common installation methods include magnetic, bolted and adhesive installation. It cannot ensure that they are in close contact with the object being measured, and attenuation and distortion will occur during signal transmission.

[0004] With the introduction of the concept of intelligent tools, tools have been transformed from tools that simply "passively execute" processing instructions and remove materials such as metals to intelligent entities that can "actively sense" and respond to state changes during processing (including but not limited to cutting forces, temperature fluctuations and vibrations). In ultra-precision machining, the time and space scales of the cutting tool and the workpiece are at the millisecond and micro-nanometer levels, causing the tool tip to be subjected to strong transient thermal loads. Current intelligent tools have certain limitations and cannot adapt to the above situation.

[0005] For example, the embedded thermocouple smart tools and thin film thermocouple smart tools mentioned in the literature "Liu Qiang, Zhang Haijun, Liu Xianli, et al. A review of smart tool research [J]. Journal of Mechanical Engineering, 2021, 57(21): 248-268." and the literature "Ye Wenchang, Guo Bicheng, Deng Zhaohui, et al. Research progress and development trend of key technologies for tool intelligence [J]. Journal of Mechanical Engineering, 2023, 59(23): 265-282." can sense the temperature changes during the cutting process. However, when the thin film thermocouple is embedded in the tool groove micro-texture, it is necessary to pre-process micro-grooves of micro-nano scale. The micro-nano processing process is complex and will damage the tool structure itself, affecting the tool life and processing effect. The coated thin film thermocouple will also wear with the tool wear, thereby affecting the temperature sensing effect. In addition, the arrangement of the thermocouple is limited, resulting in the measured temperature not being the actual cutting position, and temperature sensing of the cutting micro-area cannot be achieved. Although the cutting force self-sensing turning tool system and method invented by Chinese patent CN116728160A considers improving the measurement accuracy by optimizing the decoupling algorithm, it is still unable to achieve accurate sensing of the tool tip due to the limitations of the tool structure and the strain gauge installation method. Chinese patent CN1 16352505A invented the method of doping boron into two surfaces (front blade and back blade) of the diamond tool by ion implantation to form doped areas to sense the cutting heat signal and the cutting force signal respectively, but the cutting process is a complex process, and there is a complex coupling relationship between the cutting force load and the cutting heat load. The force load and the heat load exist on both the front blade and the back blade and will affect each other. Obviously, the force and heat signals of the cutting micro-area cannot be accurately sensed by the partition doping method. Therefore, when the existing technology simultaneously measures the cutting force, cutting heat and vibration signals in the cutting process, there is a problem of inaccurate measurement results. Summary of the invention

[0006] Based on this, it is necessary to provide an intelligent tool system with multi-signal sensing function and a manufacturing method thereof to address the above technical problems.

[0007] The present invention adopts the following technical solutions: In a first aspect, the present invention provides a method for manufacturing an intelligent tool with a multi-signal sensing function, the method comprising: Boron ions and sulfur ions are doped in turn in a multi-layer gradient doping manner at the front tip and front face of the single crystal diamond tool by a multi-step ion implantation method, so that the single crystal diamond tool has semiconductor conductivity; The multi-layer gradient doping method includes: shallow doping, middle doping and deep doping, and the multi-layer gradient doping method can control the concentration and depth distribution of the boron ions and sulfur ions so that the concentration in the tip area is the highest; A single crystal diamond tool with the conductive properties of a semiconductor is connected to a signal processing and transmission circuit through a platinum electrode to obtain an intelligent tool that can simultaneously sense force, temperature and vibration and monitor the cutting state and tool wear state in real time.

[0008] Furthermore, the boron ions and sulfur ions are doped in sequence in a multi-layer gradient doping manner at the front tip and front face regions of the single crystal diamond tool by a multi-step ion implantation method, specifically comprising: Taking the tip of the diamond tool as the starting position and the rake face as the ending position, according to the concentration gradient model, doping the boron ions at a first depth under the condition of an injection energy of 15keV to 30keV, doping the boron ions at a second depth under the condition of an injection energy of 50keV to 80keV, and doping the boron ions at a third depth under the condition of an injection energy of 100keV to 150keV; Taking the tip of the diamond tool as the starting position and the front cutting face as the ending position, according to the concentration gradient model, the sulfide ions are doped at a first depth under the condition of an injection energy of 20keV to 40keV, the sulfide ions are doped at a second depth under the condition of an injection energy of 60keV to 100keV, and the sulfide ions are doped at a third depth under the condition of an injection energy of 120keV to 150keV.

[0009] Furthermore, the formula corresponding to the multi-layer gradient doping method is: ; in, yes The doping concentration at the position, is the initial doping concentration at the center of the doped region, is the parameter that controls the doping concentration decay rate, is the distance from the center of the doped region to the doping boundary.

[0010] Furthermore, the signal processing and transmission circuit specifically includes: Constant current source, voltage amplifier, analog-to-digital converter, microcontroller; Among them, the constant current source is used to convert the received physical signal into a voltage signal, the voltage amplifier is used to amplify the received voltage signal, the analog-to-digital converter is used to convert the voltage signal output by the voltage amplifier into a digital signal, and the microcontroller is used to process and analyze the digital signal.

[0011] Furthermore, before doping the boron ions and the sulfur ions in sequence according to the multi-layer gradient doping method by the multi-step ion implantation method, the method further includes: The different regions to be doped of the single crystal diamond tool are isolated by using a mask covering technology.

[0012] Further, after obtaining the intelligent tool that can simultaneously sense force, temperature and vibration and monitor the cutting state and tool wear state in real time, it also includes: Using a classification model, the mixed signal of cutting force and cutting heat obtained by the intelligent tool during the cutting process is decoupled to obtain a cutting force component and a cutting heat component, wherein the classification model is obtained by training a deep learning model using pre-collected cutting force data and cutting heat data; The working state of the intelligent tool is determined according to the cutting force component and the cutting heat component.

[0013] Further, determining the working state of the intelligent tool according to the cutting force component and the cutting heat component specifically includes: Determining whether the intelligent tool has a cutting force overload according to the cutting force component; Determining whether the intelligent tool has a cutting heat overload according to the cutting heat component; In case of the cutting force overload or the cutting heat overload, a first warning signal is issued.

[0014] Furthermore, the method further comprises: Determining the wear degree of the intelligent tool according to the change trend of the cutting force component and the change trend of the cutting heat component; When the degree of wear is greater than a preset threshold, a second warning signal is issued.

[0015] Furthermore, the method further comprises: extracting a vibration signal component from the cutting force component; The remaining life of the intelligent tool is predicted according to the proportion of the high-frequency components in the vibration signal components.

[0016] In a second aspect, the present invention provides an intelligent tool system with a multi-signal sensing function, comprising: The doping module is used to: dope boron ions and sulfur ions in a multi-layer gradient doping manner in the front tip and front face area of ​​the single crystal diamond tool by a multi-step ion implantation method, so that the single crystal diamond tool has semiconductor conductivity; The multi-layer gradient doping method includes: shallow doping, middle doping and deep doping, and the multi-layer gradient doping method can control the concentration and depth distribution of the boron ions and sulfur ions so that the concentration in the tip area is the highest; An assembly module is used to connect a single crystal diamond tool having the conductive properties of a semiconductor to a signal processing and transmission circuit through a platinum electrode to obtain an intelligent tool that can simultaneously sense force, temperature and vibration and can monitor the cutting state and tool wear state in real time.

[0017] The at least one technical solution adopted by the present invention can achieve the following beneficial effects: The present invention firstly dopes boron ions and sulfur ions in the front cutting edge and front cutting face regions of a single crystal diamond tool in sequence according to a multi-layer gradient doping method by a multi-step ion implantation method, so that the single crystal diamond tool has the conductivity of a semiconductor; wherein the multi-layer gradient doping method includes: shallow doping, middle doping and deep doping, and the multi-layer gradient doping method can control the concentration and depth distribution of the boron ions and sulfur ions to make the concentration in the cutting edge region the highest; then the single crystal diamond tool with the conductive characteristics of a semiconductor is connected to a signal processing and transmission circuit through a platinum electrode, so as to obtain an intelligent tool that can simultaneously sense force, temperature and vibration and can monitor the cutting state and tool wear state in real time. By doping boron ions and sulfur ions in sequence in a multi-layer gradient doping manner at the front tip and front face area of ​​the single crystal diamond tool through a multi-step ion implantation method, the problem of decreased hole mobility caused by high-concentration boron doping can be effectively reduced, and the situation where the electric field in the tip area is significantly higher than that in other areas can be avoided, and the electric field concentration effect caused by the geometric characteristics of the tip area is weakened, thereby reducing the degree of change in resistance in the tip area with changes in cutting force and cutting heat, and can simultaneously detect the cutting force, cutting heat and vibration signals during the cutting process. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings: Figure 1 It is a schematic flow chart of a method for manufacturing an intelligent tool with multi-signal sensing function in the present invention; Figure 2A schematic diagram of the first principle simulation calculation of boron-sulfur co-doping by using the CASTEP software package in Materials Studio provided by the present invention; Figure 3 A flow chart of boron-sulfur co-doping of diamond cutting tools provided by the present invention; Figure 4 The ion implantation simulation calculation result diagram provided by the present invention; Figure 5 A schematic diagram of a signal processing and transmission circuit provided by the present invention; Figure 6 A physical diagram of a printed circuit board for a signal processing and transmission circuit provided by the present invention; Figure 7 A schematic diagram of the principle of an intelligent tool manufacturing method with multi-signal sensing function provided by the present invention; Figure 8 A schematic diagram of the assembly of an intelligent tool system with multi-signal sensing functions provided by the present invention; Fig. 9 A schematic diagram of an intelligent tool system with multi-signal sensing function provided by the present invention; Figure numerals: 1. screw, 2. single crystal diamond blade, 3. shank, 4. constant current source, 5. voltage amplifier, 6. analog-to-digital converter, 7. STM32 microcontroller, 8. protective shell. DETAILED DESCRIPTION

[0019] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the specific embodiments of the present invention and the corresponding drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0020] The server mentioned in the present invention can be a server set on a business platform, or a device such as a desktop computer, a laptop computer, etc. that can execute the solution of the present invention. For the convenience of description, the following description is only based on the server as the execution subject. The following is a detailed description of the technical solutions provided by various embodiments of the present invention in conjunction with the accompanying drawings.

[0021] Figure 1 The present invention is a flowchart of a method for manufacturing an intelligent tool with a multi-signal sensing function, which specifically includes the following steps: S10: doping boron ions and sulfur ions in a multi-layer gradient doping manner in the front tip and front face regions of the single crystal diamond tool by a multi-step ion implantation method, so that the single crystal diamond tool has semiconductor conductivity; Among them, the multi-layer gradient doping method includes: shallow doping, middle doping and deep doping, and the multi-layer gradient doping method can control the concentration and depth distribution of the boron ions and sulfur ions to make the concentration in the tip area the highest.

[0022] In this embodiment, the front tip of the single crystal diamond tool is used as the doping center, and the front face of the single crystal diamond tool is used as the doping boundary. Boron ions and sulfur ions are doped in sequence according to a multi-layer gradient doping method through a multi-step ion implantation method, so that the single crystal diamond tool has semiconductor conductivity.

[0023] Among them, the front blade tip refers to the blade tip area of ​​the single crystal diamond tool that contacts the object to be cut during the cutting process, the front blade face refers to the surface of the single crystal diamond tool that contacts the object to be cut during the cutting process, and the doping boundary refers to the doping position farthest from the front blade tip, that is, doping is performed between the doping boundary and the front blade tip, and no doping is performed beyond the doping boundary. When cutting different objects, the area of ​​contact between the single crystal diamond tool and the object to be cut during the cutting process is different, so the position of the doping boundary can be set according to the characteristics of the object to be cut. The doping center refers to the central area during the doping process, that is, the central area with the front blade tip as the doping center, and the doped ion concentration is the highest at the doping center. The shallow doping refers to doping the surface area of ​​the front blade tip and the front blade face, the middle layer doping refers to doping the middle layer area of ​​the front blade tip and the front blade face, and the deep layer doping refers to doping the deep area of ​​the front blade tip and the front blade face. The concentration and depth distribution of the boron ions and sulfur ions can be controlled by the multi-layer gradient doping method so that the concentration in the blade tip area is the highest.

[0024] Under high boron doping conditions, high doping concentrations may cause local deformation or destruction of the lattice structure, forming lattice defects and internal stress. As the doping concentration increases, more scattering centers will be formed in the diamond lattice. These scattering centers will interfere with the movement of holes, and the hole mobility will drop significantly.

[0025] Indicative, Figure 2 A schematic diagram of the first principle simulation calculation of boron-sulfur co-doping using the CASTEP software package in Materials Studio provided by the present invention.

[0026] like Figure 2 As shown, Figure 2The energy band distribution diagram of the doped elements at different K points (G, F, Q, Z, G) and different injection energy values ​​is shown, where K-point is a concept describing a specific wave vector (momentum) in the Brillouin Zone, which plays a very important role in crystals. K-point is widely used to describe the band structure of crystals, electronic wave functions, and the symmetry of materials. The band structure describes the distribution of electrons in materials at different energy states, especially how electrons are distributed in the energy region between the valence band and the conduction band. It reflects the available energy state of electrons and the motion properties of electrons. The band structure describes the distribution of electrons in materials at different energy states, especially how electrons are distributed in the energy region between the valence band and the conduction band. It reflects the available energy state of electrons and the motion properties of electrons.

[0027] refer to Figure 2 When the vertical axis is 0, the blank area is the bandgap. The wider the bandgap, the worse the conductivity of the material, and the narrower the bandgap, the better the conductivity of the material. Figure 2 The band gap width is 3.3 electron volts, which proves that high conductive materials can be obtained by ion doping single crystal diamond through the doping method of this scheme.

[0028] Boron-sulfur co-doping can effectively reduce the problem of decreased hole mobility caused by high-concentration boron doping. The electrons introduced by sulfur doping can compensate for the holes introduced by boron doping, thereby reducing the frequency of carrier scattering and increasing the mobility of holes. Co-doping can improve the effectiveness of doping. In addition, the presence of sulfur will help more boron atoms enter the effective doping position, increase the carrier concentration of the material, and improve the conductivity of the material. At the same time, co-doping can help stabilize the lattice structure and reduce lattice defects and damage caused by doping.

[0029] S20: A single crystal diamond tool with the conductive properties of a semiconductor is connected to a signal processing and transmission circuit through a platinum electrode to obtain an intelligent tool that can simultaneously sense force, temperature and vibration and monitor the cutting status and tool wear status in real time.

[0030] In this embodiment, the diamond tool is connected to a pre-built signal processing and transmission circuit via platinum electrodes, and a four-probe measurement method is used to eliminate measurement errors caused by wire resistance and contact resistance.

[0031] Optionally, after doping the boron ions and the sulfur ions in sequence in a multi-layer gradient doping manner by a multi-step ion implantation method, the method further includes: treating the boron ions and the sulfur ions in the diamond tool by a laser annealing process.

[0032] In this embodiment, Figure 3 A flow chart of boron-sulfur co-doping of diamond cutting tools provided by the present invention.

[0033] refer to Figure 3 After the diamond tool is doped with boron ions and sulfur ions, the mask of the doped area is removed, and the boron ions and sulfur ions in the doped area are subjected to laser annealing so that the doped ions enter the correct position in the lattice (such as the lattice substitution site), thereby activating the doped ions, restoring the lattice structure of the diamond, and improving the conductive performance.

[0034] based on Figure 1 The intelligent tool system with multi-signal sensing function and its manufacturing method shown in the figure first take the tip of the diamond tool as the starting position and the front face as the ending position, and dope the boron ions and sulfur ions in turn according to the preset concentration gradient model through multi-step ion implantation technology, so as to give the diamond tool semiconductor conductivity, and make the resistance of the diamond tool sensitive to external cutting force, cutting heat and other states. It realizes the simultaneous monitoring of multiple state signals and provides the operator with a full range of cutting state information. It can also effectively reduce the problem of decreased hole mobility caused by high-concentration boron doping, and the situation that the electric field in the tool tip area is significantly higher than that in other areas, weaken the electric field concentration effect caused by the geometric characteristics of the tool tip area, thereby reducing the drastic change of the resistance in the tool tip area with the change of cutting force and cutting heat, and can simultaneously detect the cutting force, cutting heat and vibration signals in the cutting process.

[0035] When applying the intelligent tool system with multi-signal sensing function and the manufacturing method thereof provided by the present invention, it is not necessary to Figure 1 The steps are executed in the order shown. The specific execution order of the steps can be determined according to needs, and the present invention does not limit this.

[0036] In addition, in one or more embodiments of the present invention, the boron ions and sulfur ions are doped in sequence in a multi-layer gradient doping manner at the front tip and front face regions of the single crystal diamond tool by a multi-step ion implantation method, specifically including: S101: With the front cutting edge of the diamond tool as the starting position and the front cutting face as the ending position, according to the multi-layer gradient method, the boron ions are doped at a first depth under the condition of an injection energy of 15keV to 30keV, the boron ions are doped at a second depth under the condition of an injection energy of 50keV to 80keV, and the boron ions are doped at a third depth under the condition of an injection energy of 100keV to 150keV.

[0037] S102: With the front cutting edge of the diamond tool as the starting position and the front cutting face as the ending position, according to the multi-layer gradient method, the sulfide ions are doped at a first depth under the condition of an injection energy of 20keV to 40keV, the sulfide ions are doped at a second depth under the condition of an injection energy of 60keV to 100keV, and the sulfide ions are doped at a third depth under the condition of an injection energy of 120keV to 150keV.

[0038] In this embodiment, the first depth refers to the shallow region of the doped region of the single crystal diamond tool, the second depth refers to the middle region of the doped region of the single crystal diamond tool, and the third depth refers to the deep region of the doped region of the single crystal diamond tool. By doping boron ions and sulfur ions into the single crystal diamond tool as described in this solution, the doping ion concentration in the diamond tool tip area can be the highest, and a smooth decrease in doping ion concentration from the shallow layer to the deep layer is achieved.

[0039] Indicative, Figure 4 This is a diagram of the ion implantation simulation calculation results provided by the present invention.

[0040] Figure 4 The Monte Carlo calculation was performed using SRIM software to simulate the injection process of boron ions under 1000 injections, where A represents the unit of length, the horizontal axis 4000A is equal to 400 nanometers, and the vertical axis 2000A is equal to 200 nanometers. During the ion injection process, the concentration distribution of doped ions is usually close to a Gaussian distribution. Boron ions have a small radius and a light mass, while sulfur ions have a large radius and a heavy mass. Therefore, in order to achieve the same injection layer depth, the injection energy of boron ions is much smaller than that of sulfur ions. In order to introduce ions at different depths, adjust the doping distribution, make the overall concentration more uniform, and clarify the position of sulfur ions and the doping layer of sulfur ions, the concentration distribution of boron ions at different injection depths is simulated by Monte Carlo, and then the concentration distribution of sulfur ions at different injection depths can be obtained. Figure 4 The ion distribution of boron ions in the depth direction during the injection process can be clearly seen, providing theoretical support for subsequent boron ion and sulfur ion co-injection experiments.

[0041] The scheme shown in this embodiment combines gradient doping with multi-step ion implantation to dope boron ions and sulfur ions into the single crystal diamond tool, accurately controls the concentration of the doped ions, makes the concentration in the diamond tip area the highest, and achieves a smooth decrease in the doped ion concentration from the shallow to the deep layer of the doped area, thereby optimizing the electrical and physical properties of the single crystal diamond tool and providing the necessary conditions for subsequent accurate detection of cutting force and cutting heat during the cutting process.

[0042] In addition, in one or more embodiments of the present invention, the formula corresponding to the multi-layer gradient doping method is: (1) in, yes The doping concentration at the position, is the initial doping concentration at the center of the doped region, is the parameter that controls the doping concentration decay rate, It is the distance from the center of the doping area to the doping boundary. The center of the doping area refers to the central area during the doping process. In this embodiment, the front blade tip is the center of the doping area, and the concentration of doped ions is the highest at the doping center. The doping boundary refers to the doping position farthest from the front blade tip, that is, doping is performed between the doping boundary and the front blade tip, and no doping is performed beyond the doping boundary. When cutting different objects, the area of ​​contact between the single crystal diamond tool and the cut object during the cutting process is different, so the position of the doping boundary can be set according to the characteristics of the cut object.

[0043] In this embodiment, the gradient formula shown in formula (1) can make the ion doping concentration decrease nonlinearly from the doping boundary of the cutting edge to the front cutting edge of the single crystal diamond tool, so that the electric field in the cutting edge area of ​​the diamond will not be significantly higher than that in other doping areas, which can ensure that the electric field distribution is smoother and solve the problem of complex stress distribution or thermal load change in the cutting process of the single crystal diamond tool (such as the large temperature difference between the cutting edge and the blade body).

[0044] Specifically, the local electric field in the doping region of the single crystal diamond tool can be With charge distribution The relationship between is used to describe the electric field effect of the doped region, as shown in formula (2): (2) in: Indicates the position of the diamond doped region The electric field strength at . Indicates location The charge density distribution at the electrode is determined by the ion doping concentration and external effects such as external stress and thermal effect. is the dielectric constant of diamond. The dielectric constant of diamond is usually high, so it can have a certain inhibitory effect on the electric field effect. is the integral variable, representing the spatial variation of the charge distribution.

[0045] Charge density By doping concentration Decide and be under pressure and temperature gradient The influence of external factors is shown in formula (3): (3) in: is the charge constant (e.g., the charge of an electron), It is a distribution function of the doping concentration and may show a gradient change depending on the design of the doping area. It is the additional charge effect caused by stress and temperature, which can be qualitatively expressed as a functional relationship based on the measured data.

[0046] Formula (3) qualitatively explains the generation and extension of the field effect. Local doping or gradient doping affects the charge density distribution. , thereby changing the electric field in the doped region By properly designing the doping concentration and consider external stress and temperature The influence of external forces such as can regulate the field effect so that its coupling effect in a specific area is suppressed or offset.

[0047] In addition, in one or more embodiments of the present invention, the signal processing and transmission circuit specifically includes: Constant current source, voltage amplifier, analog-to-digital converter, microcontroller; Among them, the constant current source is used to convert the received physical signal into a voltage signal, the voltage amplifier is used to amplify the received voltage signal, the analog-to-digital converter is used to convert the voltage signal output by the voltage amplifier into a digital signal, and the microcontroller is used to process and analyze the digital signal.

[0048] In this embodiment, schematically, Figure 5 A schematic diagram of a signal processing and transmission circuit provided by the present invention, Figure 6 A physical picture of a printed circuit board for the signal processing and transmission circuit provided by the present invention.

[0049] refer to Figure 5The signal processing and transmission circuit includes: a constant current unit (LM334), a voltage amplifier (OPA2333), an analog-to-digital converter (AD81115), an STM (SGS&Tomson micro, STM) 32 microcontroller and a personal computer (PC) end. The constant current unit is a 200mAh lithium battery, which provides a constant current of 1mA to the signal processing and transmission circuit. LM: L and M have no specific physical meaning, but in the naming of integrated circuits, they usually mean "Linear Monolithic", which means a linear circuit (Linear Circuit) or a monolithic integrated circuit (Monolithic Integrated Circuit). The actual role of LM: 1. Indicate the origin and series of the product for easy identification by users.

[0050] 2. For example, the LM series is primarily associated with linear analog circuits, while other prefixes (such as TL, SN, etc.) may be associated with digital circuits or special applications.

[0051] Historical heritage: The LM series includes many classic chips (such as the LM324 operational amplifier and the LM317 voltage regulator). These products have become industry standards, and the continued use of the LM prefix is ​​for compatibility. In the LM334, LM is the naming prefix used by National Semiconductor (now TI), mainly indicating that it belongs to a series of linear, analog integrated circuits. Although it has no specific technical meaning, it has the function of identification and inheritance in the industry.

[0052] In OPA2333, the prefix OPA stands for Operational Amplifier, which is the abbreviation of "operational amplifier". In AD81115, A refers to analog signal and D refers to digital signal.

[0053] In the present embodiment, the resistance of the single crystal diamond tool will change according to the change of cutting force, cutting temperature and the change of cutting state parameters such as vibration. Under the power supply of the constant current single source, the voltage on the single crystal diamond tool will also change accordingly. In order to process these signals, the voltage amplifier amplifies the voltage signal of the constant current unit collected, and then adopts the analog-to-digital converter based on ADS1115 to convert the collected analog voltage signal into a digital signal. Finally, the Bluetooth module based on the STM32 processor is responsible for transmitting the processed digital signal to the PC end for further analysis and processing by the PC end.

[0054] In addition, in one or more embodiments of the present invention, before doping the boron ions and the sulfur ions in sequence according to the multi-layer gradient doping method by the multi-step ion implantation method, the method further includes: The different regions to be doped of the single crystal diamond tool are isolated by using a mask covering technology.

[0055] In this embodiment, reference Figure 3 Before ion doping the single crystal diamond tool, the mask covering technology can be used to divide the different doping regions of the single crystal diamond tool. For example, the mask covering technology can be used to separate the tip of the single crystal diamond tool from the front face region, so that when ion doping is performed on the tip of the single crystal diamond tool, the front face region of the single crystal diamond tool is not affected, thereby achieving more accurate control of the doping concentration of different regions of the single crystal diamond tool.

[0056] In addition, in one or more embodiments of the present invention, after obtaining the intelligent tool that can simultaneously sense force, temperature and vibration and monitor the cutting state and tool wear state in real time, it also includes: Using a classification model, the mixed signal of cutting force and cutting heat obtained by the intelligent tool during the cutting process is decoupled to obtain a cutting force component and a cutting heat component, wherein the classification model is obtained by training a deep learning model using pre-collected cutting force data and cutting heat data; The working state of the intelligent tool is determined according to the cutting force component and the cutting heat component.

[0057] In this embodiment, since the resistance of the single crystal diamond tool is affected by the cutting force and cutting temperature, resulting in different resistance responses, in order to avoid confusing the resistance changes of the single crystal diamond tool caused by the cutting force and the cutting heat, a machine learning algorithm can be used to separate the cutting force signal related to the piezoresistive effect and the cutting heat signal related to the thermal resistance effect.

[0058] Specifically, multiple experiments can be carried out under known cutting force and temperature conditions to record the resistance change of the single crystal diamond tool. The experiment needs to control a single variable (such as only changing the cutting force or temperature) to generate a data set for training the neural network. In this embodiment, a multilayer perceptron (MLP) model can be used for training, and the actual cutting force signal and cutting temperature signal corresponding to each experiment are used as labels to supervise the training of the above model. In the actual cutting process, the trained MLP model is used to predict the collected resistance change signal in real time. The MLP model will output the decoupled cutting force signal and cutting heat signal based on the input voltage signal.

[0059] Optionally, before ion implantation is performed on a single crystal diamond tool, the single crystal diamond tool is pretreated to ensure the purity of the sample surface and the stability of the crystal structure, thereby ensuring the effect of ion implantation and the uniformity of doping. The pretreatment mainly includes surface polishing and surface cleaning of the diamond. Surface polishing can ensure that the surface of the diamond is smooth and flat, and reduce surface defects, and can be specifically mechanical polishing or chemical mechanical polishing. Surface cleaning mainly includes: first cleaning with an organic solvent, then cleaning with deionized water, and finally drying.

[0060] Through the above technical solution, this embodiment can separate the cutting heat signal and the cutting force signal sensed by the single crystal diamond tool during the cutting process, and then distinguish the resistance change of the single crystal diamond tool caused by the change of cutting force and the resistance change of the single crystal diamond tool caused by the change of cutting heat. This decoupling process improves the accuracy of monitoring the cutting force and cutting heat, and effectively avoids the misjudgment caused by the mixing of cutting force and cutting heat in the traditional monitoring method. In addition, the accurate decoupling results can provide a more reliable basis for optimizing the processing parameters.

[0061] In addition, in one or more embodiments of the present invention, determining the working state of the intelligent tool according to the cutting force component and the cutting heat component specifically includes: According to the cutting force component, it is determined whether the intelligent tool has a cutting force overload.

[0062] In this embodiment, during the cutting process of the single crystal diamond tool, the magnitude and change trend of the cutting force can reflect the load change of the single crystal diamond tool during the cutting process. By monitoring the cutting force signal, it is possible to know in real time whether the magnitude of the cutting force is overloaded. Moreover, by monitoring the change trend of the cutting force signal, it is also possible to predict whether the single crystal diamond tool begins to wear or becomes abnormal.

[0063] According to the cutting heat component, it is determined whether the intelligent tool has a cutting heat overload.

[0064] In this embodiment, the heat accumulation of the single crystal diamond tool during the cutting process reflects the temperature change in the cutting area. Through the cutting heat signal, the heat generated during the cutting process can be understood to prevent the single crystal diamond tool from softening, deforming, and other problems caused by excessive temperature. In addition, abnormal changes in the cutting heat signal may also indicate wear of the single crystal diamond tool or changes in cutting conditions.

[0065] In case of the cutting force overload or the cutting heat overload, a first warning signal is issued.

[0066] In this embodiment, the first warning signal includes but is not limited to: a light flashing signal and a sound warning signal.

[0067] Optionally, in the event of an overload of the cutting force or an overload of the cutting heat, the single crystal diamond tool may automatically power off and stop working.

[0068] Through the above technical solution, this embodiment can detect the change of cutting force and cutting heat of the single crystal diamond tool during the cutting process, and send out a warning signal in the case of cutting force overload or cutting heat overload, which can prompt the operator to stop the construction in time and check the performance of the single crystal diamond tool to avoid damage to the single crystal diamond tool during the cutting process, and prevent damage to the cut object. In addition, the single crystal diamond tool can dynamically adjust the cutting parameters (such as feed speed, cutting depth, etc.) to avoid excessive wear or sudden breakage of the single crystal diamond tool under harsh working conditions, thereby extending the service life of the single crystal diamond tool.

[0069] In addition, in one or more embodiments of the present invention, the method further comprises: Determining the wear degree of the intelligent tool according to the change trend of the cutting force component and the change trend of the cutting heat component; When the degree of wear is greater than a preset threshold, a second warning signal is issued.

[0070] In this embodiment, the wear degree of the intelligent tool can be determined by the change trend of the cutting force component and the cutting heat component of the single crystal diamond tool during the cutting process. When the wear degree is greater than the preset threshold, it means that the intelligent tool is about to be damaged. The single crystal diamond tool sends out a second warning signal in time, which can avoid damage to the cut object during the cutting process and prevent construction workers from being injured during the cutting process. The first warning signal includes but is not limited to: a flashing light signal and a sound warning signal.

[0071] In addition, in one or more embodiments of the present invention, the method further comprises: extracting a vibration signal component from the cutting force component; The remaining life of the intelligent tool is predicted according to the proportion of the high-frequency components in the vibration signal components.

[0072] In this embodiment, the vibration intensity of the single crystal diamond tool during the cutting process is a direct reflection of the wear of the single crystal diamond tool. The increase of the high frequency component in the vibration signal usually means that the wear of the single crystal diamond tool is aggravated or the single crystal diamond tool is about to break. By monitoring the vibration signal for a long time, the life of the single crystal diamond tool can be predicted and replaced in time to avoid processing quality problems caused by sudden damage of the tool.

[0073] Optionally, a mapping relationship between the proportion of the high-frequency vibration signal component to the vibration signal and the remaining life of the single crystal diamond tool can be established through experimental data to predict the remaining life of the single crystal diamond tool.

[0074] Indicative, Figure 7 A schematic diagram of the principle of an intelligent tool manufacturing method with multi-signal sensing function provided by the present invention.

[0075] refer to Figure 7 BS doping refers to boron-sulfur co-doping, I μ refers to the current which is positively correlated with the carrier mobility. It refers to variable resistance, U refers to voltage, T refers to cutting temperature, and F refers to cutting force.

[0076] The resistance R in the expression R = g(F, X, T, t) is a function of the cutting force F, cutting temperature T, vibration X, and time t. It shows that there is a complex multivariate relationship between these parameters, which can be described by the function g.

[0077] Where, vibration X = f 3 The X in (F,w) represents the vibration signal intensity in the frequency domain, which is a function of the cutting force F and the frequency w.

[0078] The expression F=f 1 (R, t) indicates that the cutting force F can be expressed by a function f 1 It is expressed as a function of resistance R and time t. This expression shows that cutting force is a key output of cutting state changing with time.

[0079] Cutting temperature T=f 2 (R, t), which shows that the cutting temperature T can be expressed by a certain function f 2 It is expressed as a function of resistance R and time t, which shows that the cutting temperature is affected by the state and dynamic changes of the machined surface.

[0080] The time t reflects dynamic processes, such as periodic behavior of vibrations or non-steady-state changes.

[0081] The R in the expression R=g(F,T,X,t) describes the combined effect of cutting force F, cutting temperature T, vibration X and time t on resistance R. Its core function is to reveal the complex coupling relationship between vibration and cutting state.

[0082] By doping the single crystal diamond tool with boron ions and sulfur ions, a single crystal diamond tool with semiconductor conductive properties is obtained. By connecting the single crystal diamond tool to the signal transmission and processing circuit, the resistance change of the single crystal diamond tool can be converted into a voltage change. Then the voltage signal is decoupled from the mechanical, thermal and vibration signals, the decoupled data is analyzed, and the worn tool is compared with the normal tool based on the decoupled data.

[0083] Indicative, Figure 8 This is a schematic diagram of the assembly of an intelligent tool system with multi-signal sensing functions provided by the present invention.

[0084] refer to Figure 8 The intelligent tool system includes: a screw 1, a single crystal diamond blade 2, a tool bar 3, a constant current source 4, a voltage amplifier 5, an analog-to-digital converter 6, an STM32 microcontroller 7 and a protective shell 8. The single crystal diamond blade 2 is fixed in the mounting slot at the front end of the tool bar 3 by a screw 1, and the main components such as the constant current source 4, the voltage amplifier 5, the analog-to-digital converter 6, and the STM32 microcontroller 7 are welded on the circuit board by welding and well insulated. The single crystal diamond blade 2 is connected to the circuit module through a platinum electrode, and finally sealed and protected by a protective shell 8.

[0085] The above is an intelligent tool system with multi-signal sensing function and a manufacturing method thereof provided by one or more embodiments of the present invention. Based on the same idea, the present invention also provides a corresponding intelligent tool system with multi-signal sensing function, such as Fig. 9 shown.

[0086] Fig. 9 A schematic diagram of an intelligent tool system with multi-signal sensing function provided by the present invention includes: The doping module is used to: dope boron ions and sulfur ions in a multi-layer gradient doping manner in the front tip and front face area of ​​the single crystal diamond tool by a multi-step ion implantation method, so that the single crystal diamond tool has semiconductor conductivity; The multi-layer gradient doping method includes: shallow doping, middle doping and deep doping, and the multi-layer gradient doping method can control the concentration and depth distribution of the boron ions and sulfur ions so that the concentration in the tip area is the highest; An assembly module is used to connect a single crystal diamond tool having the conductive properties of a semiconductor to a signal processing and transmission circuit through a platinum electrode to obtain an intelligent tool that can simultaneously sense force, temperature and vibration and can monitor the cutting state and tool wear state in real time.

[0087] The specific definition of an intelligent tool system with multi-signal sensing function can be found in the above definition of an intelligent tool manufacturing method with multi-signal sensing function, which will not be repeated here. Each module in the intelligent tool system with multi-signal sensing function can be fully or partially implemented by software, hardware and their combination.

[0088] The technical features of the above embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of the present invention.

Claims

1. A method for manufacturing an intelligent tool with multi-signal sensing function, characterized in that: include: Boron ions and sulfur ions are doped in turn in a multi-layer gradient doping manner at the front tip and front face of the single crystal diamond tool by a multi-step ion implantation method, so that the single crystal diamond tool has semiconductor conductivity; The multi-layer gradient doping method includes: shallow doping, middle doping and deep doping, and the multi-layer gradient doping method can control the concentration and depth distribution of the boron ions and sulfur ions so that the concentration in the tip area is the highest; A single crystal diamond tool with the conductive properties of a semiconductor is connected to a signal processing and transmission circuit through a platinum electrode to obtain an intelligent tool that can simultaneously sense force, temperature and vibration and monitor the cutting state and tool wear state in real time.

2. The method for manufacturing an intelligent tool with multi-signal sensing function as claimed in claim 1, characterized in that: The method of doping the front tip and the front face of the single crystal diamond tool with boron ions and sulfur ions in sequence in a multi-layer gradient doping manner by a multi-step ion implantation method specifically includes: Taking the front tip of the diamond tool as the starting position and the front face as the ending position, according to the multi-layer gradient method, the boron ions are doped at a first depth under the condition of an injection energy of 15keV to 30keV, the boron ions are doped at a second depth under the condition of an injection energy of 50keV to 80keV, and the boron ions are doped at a third depth under the condition of an injection energy of 100keV to 150keV; Taking the front cutting edge of the diamond tool as the starting position and the front cutting face as the ending position, according to the multi-layer gradient method, the sulfide ions are doped at a first depth under the condition of an injection energy of 20keV to 40keV, the sulfide ions are doped at a second depth under the condition of an injection energy of 60keV to 100keV, and the sulfide ions are doped at a third depth under the condition of an injection energy of 120keV to 150keV.

3. The method for manufacturing an intelligent tool with multi-signal sensing function as claimed in claim 1, characterized in that: The formula corresponding to the multi-layer gradient doping method is: ； in, yes The doping concentration at the position, is the initial doping concentration at the center of the doped region, is the parameter that controls the doping concentration decay rate, is the distance from the center of the doped region to the doping boundary.

4. The method for manufacturing an intelligent tool with multi-signal sensing function as claimed in claim 1, characterized in that: The signal processing and transmission circuit specifically comprises: Constant current source, voltage amplifier, analog-to-digital converter, microcontroller; Among them, the constant current source is used to convert the received physical signal into a voltage signal, the voltage amplifier is used to amplify the received voltage signal, the analog-to-digital converter is used to convert the voltage signal output by the voltage amplifier into a digital signal, and the microcontroller is used to process and analyze the digital signal.

5. The method for manufacturing an intelligent tool with multi-signal sensing function as claimed in claim 1, characterized in that: Before doping the boron ions and the sulfur ions in sequence according to the multi-layer gradient doping method by the multi-step ion implantation method, the method further includes: The different regions to be doped of the single crystal diamond tool are isolated by using a mask covering technology.

6. The method for manufacturing an intelligent tool with multi-signal sensing function as claimed in claim 1, characterized in that: After obtaining the intelligent tool that can simultaneously sense force, temperature and vibration and monitor the cutting state and tool wear state in real time, it also includes: Using a classification model, the mixed signal of cutting force and cutting heat obtained by the intelligent tool during the cutting process is decoupled to obtain a cutting force component and a cutting heat component, wherein the classification model is obtained by training a deep learning model using pre-collected cutting force data and cutting heat data; The working state of the intelligent tool is determined according to the cutting force component and the cutting heat component.

7. The method for manufacturing an intelligent tool with multi-signal sensing function as claimed in claim 6, characterized in that: Determining the working state of the intelligent tool according to the cutting force component and the cutting heat component specifically includes: Determining whether the intelligent tool has a cutting force overload according to the cutting force component; Determining whether the intelligent tool has a cutting heat overload according to the cutting heat component; In case of the cutting force overload or the cutting heat overload, a first warning signal is issued.

8. The method for manufacturing an intelligent tool with multi-signal sensing function as claimed in claim 7, characterized in that: The method further comprises: Determining the wear degree of the intelligent tool according to the change trend of the cutting force component and the change trend of the cutting heat component; When the degree of wear is greater than a preset threshold, a second warning signal is issued.

9. The method for manufacturing an intelligent tool with multi-signal sensing function as claimed in claim 7, characterized in that: The method further comprises: extracting a vibration signal component from the cutting force component; The remaining life of the intelligent tool is predicted according to the proportion of the high-frequency components in the vibration signal components.

10. An intelligent tool system with multi-signal sensing function, characterized in that: include: The doping module is used to: dope boron ions and sulfur ions in a multi-layer gradient doping manner in the front tip and front face area of ​​the single crystal diamond tool by a multi-step ion implantation method, so that the single crystal diamond tool has semiconductor conductivity; The multi-layer gradient doping method includes: shallow doping, middle doping and deep doping, and the multi-layer gradient doping method can control the concentration and depth distribution of the boron ions and sulfur ions so that the concentration in the tip area is the highest; An assembly module is used to connect a single crystal diamond tool having the conductive properties of a semiconductor to a signal processing and transmission circuit through a platinum electrode to obtain an intelligent tool that can simultaneously sense force, temperature and vibration and can monitor the cutting state and tool wear state in real time.

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