High-reliability and high-integration microwave digital integrated module packaging method and high-reliability and high-integration microwave digital integrated module

Abstract

The invention relates to a high-reliability and high-integration microwave digital integrated module packaging method and a module, and belongs to the technical field of semiconductor device packaging, in the packaging method, welding of components on a low-temperature co-fired ceramic substrate is divided into two procedures, the welding procedure of a BGA packaging device is set after the welding procedures of other components, and the welding procedure of the BGA packaging device is set after the welding procedure of the other components. And the influence of other sintering procedures on the welding spots of the BGA packaging device is avoided. And meanwhile, the selectivity of the welding flux is also increased, and the Sn63Pb37 welding flux with better wettability is adopted for welding, so that the welding reliability of the BGA packaging device is improved.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor device packaging, and in particular relates to a high-reliability and high-integration microwave digital integrated module packaging method and module. Background Art

[0002] With the development of technology, the application scope of electronic devices with wireless functions is very wide, for example, they play a significant role in the fields of communication, navigation, radar, etc. Such equipment widely uses microwave modules as functional modules of the RF front end. As a key functional module of the RF front end, the performance of the microwave module greatly affects the overall function and performance of the electronic equipment. With the development of technology, microwave modules are increasingly tending to be functionally integrated. In addition to functions such as signal amplification and filtering, microwave modules also need to integrate digital functional parts such as data processing, transmission, and control, and gradually develop into microwave digital integrated modules.

[0003] In order to realize the integrated packaging of microwave circuits and digital circuits, low-temperature co-fired ceramic substrates are usually used as integrated packaging substrates to meet wiring requirements, improve module integration, and reduce module size. However, in traditional packaging methods, the reliability of welding is insufficient, which can easily cause poor welding of the packaged core chip of the digital circuit, and then lead to abnormal product functions in subsequent links. Since the integrated module realized based on the traditional packaging method has serious long-term product reliability problems, a high-reliability microwave digital integrated module packaging method is needed. Summary of the invention

[0004] In order to solve the above problems existing in the prior art, the present invention provides a high-reliability and high-integration microwave digital integrated module packaging method and module. The technical problem to be solved by the present invention is achieved by the following technical solutions: The present invention provides a high-reliability and high-integration microwave digital integrated module packaging method, comprising: S1: preparing circuit components, a low temperature co-fired ceramic substrate and a module cavity respectively, wherein the circuit components include microwave circuit components and digital circuit components; S2: Use Sn96.5Ag3.0Cu0.5 solder and reflow soldering process to solder the components to be soldered in the circuit components on the low-temperature co-fired ceramic substrate; S3: Sn63Pb37 solder is used to sinter the low-temperature co-fired ceramic substrate into the module cavity using a vacuum furnace welding process; S4: Use Sn63Pb37 solder and high-frequency induction welding process to weld the connector and insulator into the mounting holes of the module cavity respectively; S5: Adhere the components to be bonded in the circuit components on the low temperature co-fired ceramic substrate using conductive silver glue; S6: interconnecting the circuit components, the connectors, and the insulators respectively through wire bonding; S7: Use conductive silver glue to bond the partition wall on the low temperature co-fired ceramic substrate; S8: After the partition wall is installed, use Sn63Pb37 solder to weld the BGA packaged components in the circuit components on the low-temperature co-fired ceramic substrate; S9: Use laser welding process to seal the whole to form an airtight sealed cavity, and complete the packaging of microwave digital integrated module.

[0005] In one embodiment of the present invention, S2 includes: S2.1: After wiping the pad surface of the low-temperature co-fired ceramic substrate with an oxidation-removing eraser or glue stick, wipe it clean with an alcohol non-woven cloth; S2.2: The plastic-encapsulated components to be welded are subjected to baking and dehumidification treatment; S2.3: Use a steel mesh to print Sn96.5Ag3.0Cu0.5 solder on the pad surface of the low temperature co-fired ceramic substrate; S2.4: Mount components to be soldered on the low temperature co-fired ceramic substrate; S2.5: Use lead-free reflow soldering process to solder the components to be soldered on the low-temperature co-fired ceramic substrate.

[0006] In one embodiment of the present invention, S2.2 includes: baking the plastic-encapsulated components at a temperature of 125° C. for at least 24 hours to complete a dehumidification process on the plastic-encapsulated components.

[0007] In one embodiment of the present invention, S2.5 includes: soldering the components to be soldered on the low-temperature co-fired ceramic substrate using lead-free reflow soldering within a temperature range of 240° C. to 245° C., wherein the reflow time range in the lead-free reflow soldering is 60s to 90s.

[0008] In one embodiment of the present invention, S8 includes: S8.1: After the partition wall is installed, perform surface treatment on the pad surface for connecting the BGA package device on the low temperature co-fired ceramic substrate; S8.2: Use a steel mesh to print Sn63Pb37 solder on the surface of the pad used to connect the BGA package device; S8.3: Locally heat the BGA packaged device to complete the welding of the BGA packaged device.

[0009] In one embodiment of the present invention, S8.1 includes: S8.1.1: Perform laser scanning on the surface of the pads on the low temperature co-fired ceramic substrate for connecting the BGA package components; S8.1.2: After using a glue stick to wipe the surface of the pads used to connect the BGA package components after laser scanning, use an alcohol non-woven cloth to wipe; S8.1.3: Use Sn63Pb37 solder to tin the surface of the pads on the low-temperature co-fired ceramic substrate used to connect the BGA packaged devices to complete the surface treatment.

[0010] In one embodiment of the present invention, if the original solder ball material on the BGA packaged device is Sn96.5Ag3.0Cu0.5, Sn96.3Ag3.0Cu0.7, Sn20Pb80 or Sn10Pb90, after S8.1 and before S8.2, the following is further included: S8.4: Re-ball the original solder balls on the BGA packaged device.

[0011] In one embodiment of the present invention, S8.4 includes: S8.4.1: Clean the existing solder balls on the BGA packaged devices; S8.4.2: Apply flux paste to the bottom of the BGA package. S8.4.3: Place Sn63Pb37 solder balls on the bottom of the BGA package device; S8.4.4: Place the BGA packaged device on a flat heating table or in a reflow oven, and melt the Sn63Pb37 solder ball and solder it to the bottom of the BGA packaged device; S8.4.5: Clean the solder paste with alcohol and complete the reballing process.

[0012] In one embodiment of the present invention, S8.3 includes: setting the peak temperature range of the temperature curve of local heating to 215°C±10°C, setting the reflow time to 40s to 60s, locally heating the BGA packaged device to be soldered, and completing the soldering of the BGA packaged device.

[0013] The present invention also provides a high-reliability and high-integration microwave digital integrated module, which is prepared using the above-mentioned high-reliability and high-integration microwave digital integrated module packaging method.

[0014] Compared with the prior art, the present invention has the following beneficial effects: The high-reliability and high-integration microwave digital integrated module packaging method of the present invention divides the welding of components on the low-temperature co-fired ceramic substrate into two processes, and sets the welding process of the BGA packaged device after the welding process of the other components, thereby avoiding the influence of the other sintering processes on the solder joints of the BGA packaged device. At the same time, the selectivity of the solder is increased, and the Sn63Pb37 solder with better wettability is used for welding, thereby improving the welding reliability of the BGA packaged device.

[0015] Before welding components to be welded on the low-temperature co-fired ceramic substrate, the present invention wipes the surface of the welding pad of the low-temperature co-fired ceramic substrate, thereby improving the state of the welding pad surface, improving the welding reliability and ensuring the welding quality.

[0016] Before welding the BGA packaged device on the low temperature co-fired ceramic substrate, the present invention performs laser scanning and wiping treatments on the pad surface of the low temperature co-fired ceramic substrate, effectively removing glass phase substances formed on the pad surface during the sintering process, improving the weldability of the pad and ensuring the welding quality.

[0017] The present invention performs re-balling processing on solder balls of non-Sn63Pb37 materials of BGA packaged devices, thereby greatly improving the reliability of solder joint interconnection of the BGA packaged devices.

[0018] The high-reliability and high-integration microwave digital integrated module of the present invention integrates the microwave circuit and the digital circuit on a low-temperature co-fired ceramic substrate, thereby greatly reducing the size of the module.

[0019] The above description is only an overview of the technical solution of the present invention. In order to more clearly understand the technical means of the present invention, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present invention more obvious and easy to understand, the following specifically cites a preferred embodiment and describes it in detail with the accompanying drawings as follows. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 It is a flow chart of a high-reliability and high-integration microwave digital integrated module packaging method provided by an embodiment of the present invention; Figure 2 This is a flow chart of S2 in the high-reliability and high-integration microwave digital integrated module packaging method provided by an embodiment of the present invention; Figure 3 This is a flow chart of S8 in the high-reliability and high-integration microwave digital integrated module packaging method provided by an embodiment of the present invention; Figure 4 This is a flow chart of S8.1 in the high-reliability and high-integration microwave digital integrated module packaging method provided by an embodiment of the present invention; Figure 5 It is a flow chart of S8.4 in the high-reliability and high-integration microwave digital integrated module packaging method provided by an embodiment of the present invention; Figure 6 It is a structural schematic diagram of a high-reliability and high-integration microwave digital integrated module provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0021] In order to further explain the technical means and effects adopted by the present invention to achieve the predetermined purpose of the invention, a high-reliability and high-integration microwave digital integrated module packaging method and module proposed in accordance with the present invention are described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0022] The above and other technical contents, features and effects of the present invention are clearly presented in the following detailed description of the specific implementation modes in conjunction with the accompanying drawings. Through the description of the specific implementation modes, the technical means and effects adopted by the present invention to achieve the predetermined purpose can be more deeply and specifically understood. However, the attached drawings are only for reference and explanation purposes and are not used to limit the technical solutions of the present invention.

[0023] Embodiment 1 like Figure 1 As shown, the high-reliability and high-integration microwave digital integrated module packaging method of this embodiment includes: S1: preparing circuit components, a low-temperature co-fired ceramic substrate and a module cavity respectively, wherein the circuit components include microwave circuit components and digital circuit components.

[0024] Exemplarily, this embodiment can design the shape and internal dimensions of the module cavity according to actual technical requirements, and process and surface treat the module cavity. This embodiment can perform pre-layout wiring on the low-temperature co-fired ceramic substrate according to the requirements of the technical agreement, and process it according to the design production document. The surface treatment process of the low-temperature co-fired ceramic substrate can be compatible with the processing methods of both welding and wire bonding. This embodiment can prepare circuit components according to the component list of the design document, and screen and inspect the circuit components to ensure that the functions of the circuit components are intact; wherein, by function, the circuit components include: microwave circuit components and digital circuit components, and by process, the circuit components include: components to be welded, components to be bonded, connectors, insulators, and BGA packaging devices.

[0025] S2: Use Sn96.5Ag3.0Cu0.5 solder and reflow soldering process to solder the components to be soldered in the circuit components on the low-temperature co-fired ceramic substrate.

[0026] It should be noted that the interior of the low-temperature co-fired ceramic substrate is provided with a three-dimensional high-density circuit. In the preparation process of the low-temperature co-fired ceramic substrate, the low-temperature sintered ceramic powder is first made into a green ceramic tape with precise thickness and density, and then the required circuit pattern is made on the green ceramic tape by punching or laser drilling, micropore grouting, precision conductor paste printing and other processes, and the passive components and functional circuits are buried in the multilayer ceramic substrate, and finally stacked together and sintered at 850℃ to 900℃. A pad is provided on the surface of the low-temperature co-fired ceramic substrate; before sintering, the conductor paste is printed on the position corresponding to the pad, and then the pad is sintered at a temperature of 850℃ to 900℃ to form. Its main component is Pt / Pd / Au metal powder, and the Au component in the pad reacts with the tin in the tin-lead solder to form an effective weld. In addition to the metal powder component, it also includes impurities generated by resin and co-firing, which affects the reliability of welding. In view of this, it is necessary to wipe the surface of the pad before welding.

[0027] like Figure 2 As shown, in this embodiment, S2 includes: S2.1: After wiping the pad surface of the low-temperature co-fired ceramic substrate with an oxidation-removing eraser or glue stick, wipe it clean with an alcohol non-woven cloth; S2.2: Use baking dehumidification treatment on the plastic-encapsulated components among the components to be soldered.

[0028] In an optional embodiment, S2.2 includes: baking the plastic-encapsulated components at a temperature of 125° C. for at least 24 hours to complete a dehumidification process on the plastic-encapsulated components.

[0029] Exemplarily, plastic-encapsulated components are all moisture-sensitive components, such as SOP (Small Out-Line Package, integrated circuit package) packaged devices, QFP (Quad Flat Package, square flat package) packaged devices or QFN (QuadFlat No-leads Package, square flat no-lead package) packaged devices.

[0030] S2.3: Use a steel mesh to print Sn96.5Ag3.0Cu0.5 solder on the pad surface of the low temperature co-fired ceramic substrate.

[0031] Exemplarily, a paste Sn96.5Ag3.0Cu0.5 solder is printed on the pad surface of the low temperature co-fired ceramic substrate using a steel mesh.

[0032] S2.4: Mount components to be soldered on the low temperature co-fired ceramic substrate; S2.5: Use lead-free reflow soldering process to solder the components to be soldered on the low-temperature co-fired ceramic substrate.

[0033] In an optional embodiment, S2.5 includes: soldering the components to be soldered on the low-temperature co-fired ceramic substrate using lead-free reflow soldering within a temperature range of 240° C. to 245° C., wherein the reflow time range of the lead-free reflow soldering is 60s to 90s.

[0034] S3: Sn63Pb37 solder is used to sinter the low-temperature co-fired ceramic substrate into the module cavity using a vacuum furnace welding process.

[0035] For example, a 0.1 mm thick Sn63Pb37 solder sheet is used, and a vacuum furnace welding process is used to sinter the low-temperature co-fired ceramic substrate with the components to be welded into the module cavity.

[0036] S4: Use Sn63Pb37 solder and high-frequency induction welding process to weld the connector and insulator into the mounting holes of the module cavity respectively; S5: Adhere the components to be bonded in the circuit components on the low temperature co-fired ceramic substrate using conductive silver glue; S6: The circuit components, connectors and insulators are interconnected by wire bonding.

[0037] Exemplarily, the connectors include: RF connectors and rectangular connectors. The RF connectors and insulators can both adopt the gold ribbon wrap welding bonding process, the rectangular connectors can adopt the gold ribbon pressure welding bonding process, the circuit components can adopt the wire bonding process, and the wires can be made of gold wire, silicon aluminum wire or copper wire.

[0038] S7: Use conductive silver glue to bond the partition wall on the low-temperature co-fired ceramic substrate.

[0039] Due to the use of low-temperature co-fired ceramic substrates, the wettability requirements for solder are high, while the wettability of Sn96.5Ag3.0Cu0.5 solder is low, which can easily cause poor welding of the core chip of the BGA packaged device, thereby causing abnormal function of the integrated module. Using Sn63Pb37 solder for welding can improve welding reliability, but the melting point of Sn96.5Ag3.0Cu0.5 solder is 217°C, and the melting point of Sn63Pb37 solder is only 183°C. Using the reflow soldering process to weld at the same time will affect the welding reliability of circuit components welded with Sn63Pb37 solder, which makes it difficult to implement the process. In addition, sintering and other processes involving heating will also affect the solder joints of BGA packaged devices. In view of this, in this embodiment, the welding of BGA packaged devices is performed as an independent process at a later stage.

[0040] S8: After the partition wall is installed, use Sn63Pb37 solder to weld the BGA packaged devices in the circuit components on the low-temperature co-fired ceramic substrate.

[0041] It should be noted that BGA packaged devices assume important and critical functions in the circuit, such as processing, storage and control functions. Therefore, the reliability of BGA packaged device welding greatly affects the performance of the overall function of the integrated module. BGA packaged device welding has the following characteristics: the input and output terminals of the BGA packaged device are distributed at the bottom of the BGA packaged device in the form of array solder balls. The number of pins of BGA packaged devices usually ranges from a few hundred to 2,000 to 3,000. Each pin assumes a different function and needs to be well welded. Therefore, the welding difficulty of BGA packaged devices is much greater than that of other circuit components packaged on low-temperature co-fired ceramic substrates. Solder balls are pin terminals of BGA packaged devices. The diameters of solder balls of different packaged devices are usually different. The diameter range of solder balls is usually between 0.35mm and 0.89mm. If the solder ball size is too small or the contact area with the pad is insufficient, it is very easy to cause unreliable welding. The solder balls are distributed in an array at the bottom of the BGA packaged device. The solder balls are installed on a low-temperature co-fired ceramic substrate through interconnection with the pads. This connection structure makes the solder balls susceptible to lateral shear stress, which makes the solder joints susceptible to stress and cracks, thereby causing functional failure.

[0042] Therefore, the welding difficulty of BGA packaged devices on low-temperature co-fired ceramic substrates is much greater than that of other packaged types of devices. In order to ensure the welding quality, the surface of the pad needs to be treated before welding.

[0043] like Figure 3 As shown, in this embodiment, S8 includes: S8.1: After the partition wall is installed, perform surface treatment on the pad surface on the low temperature co-fired ceramic substrate used to connect the BGA package device.

[0044] like Figure 4 As shown, in an optional embodiment, S8.1 includes: S8.1.1: Perform laser scanning on the surface of the pads on the low temperature co-fired ceramic substrate used to connect the BGA package components.

[0045] The principle is that during the sintering process of the low-temperature co-fired ceramic substrate in the sintering furnace, glass phase substances will precipitate on the surface of the pad, which will greatly affect the wettability of the solder. If the wetting is poor, the formation of the solder joint will be greatly affected. In addition, because the glass phase substances are difficult to remove only by an eraser, and the thickness of the pad is usually only 15μm to 20μm, it is easy to damage the pad surface if scraped with a sharp scraper. Therefore, in this embodiment, a laser trimming machine is used to perform laser scanning on the entire pad, and the laser can effectively separate the glass phase substances on the pad surface.

[0046] Exemplarily, the current of the laser scanning can be set to 8.85A, the power can be set to 5KHz, and the power factor of the laser can be set to 200.

[0047] S8.1.2: After using a glue stick to wipe the surface of the pads used to connect the BGA package components after laser scanning, use an alcohol non-woven cloth to wipe; S8.1.3: Use Sn63Pb37 solder to tin the surface of the pads on the low-temperature co-fired ceramic substrate used to connect the BGA packaged devices to complete the surface treatment.

[0048] S8.2: Use a steel mesh to print Sn63Pb37 solder on the surface of the pads used to connect the BGA package components.

[0049] Exemplarily, a stencil is used to print paste Sn63Pb37 solder on the surface of a pad for connecting a BGA packaged device.

[0050] S8.3: Locally heat the BGA packaged device to complete the welding of the BGA packaged device.

[0051] In an optional embodiment, S8.3 includes: setting the peak temperature range of the local heating temperature curve to 215°C ± 10°C, setting the reflow time to 40s to 60s, locally heating the BGA packaged device to be soldered, and completing the soldering of the BGA packaged device.

[0052] In an optional embodiment, if the original solder ball material on the BGA packaged device is Sn63Pb37, S8.2 is directly executed; if the original solder ball material on the BGA packaged device is Sn96.5Ag3.0Cu0.5, Sn96.3Ag3.0Cu0.7, Sn20Pb80 or Sn10Pb90, after S8.1 and before S8.2 it also includes: S8.4: re-planting the solder balls of the BGA packaged device.

[0053] like Figure 5 As shown, specifically, S8.4 includes: S8.4.1: Clean the existing solder balls on the BGA packaged devices; Exemplarily, a smart soldering iron and solder wick are used to remove the original solder balls on the BGA packaged device.

[0054] S8.4.2: Apply flux paste to the bottom of the BGA package. Exemplarily, a small brush is used to apply a layer of flux paste on the bottom of the BGA package device after the solder balls are removed.

[0055] S8.4.3: Place Sn63Pb37 solder balls on the bottom of the BGA package device; Exemplarily, a special ball placement tool is used to place a solder ball made of Sn63Pb37 material with the same diameter as the original solder ball on the BGA packaged device at the bottom of the BGA device.

[0056] S8.4.4: Place the BGA packaged device on a flat heating table or in a reflow oven, and melt the Sn63Pb37 solder ball and solder it to the bottom of the BGA packaged device; S8.4.5: Clean the solder paste with alcohol and complete the reballing process.

[0057] The principle is that the soldering reliability is better when the material of the solder pad and the solder ball of the BGA packaged device is the same, so the solder ball of the BGA packaged device needs to be re-planted.

[0058] S9: Use laser welding process to seal the whole to form an airtight sealed cavity, and complete the packaging of microwave digital integrated module.

[0059] Exemplarily, the circuit components on the low-temperature co-fired ceramic substrate are functionally tested to ensure that they are correct, and then a laser sealing process is used to seal the cover plate on the sealed cavity to form an airtight sealed cavity to protect the internal circuit components and prevent the internal circuit components from being affected by the environment.

[0060] Embodiment 2 Exemplarily, this embodiment provides a high-reliability and high-integration microwave digital integrated module packaging method, comprising the steps of: Step 1: preparing circuit components, a low-temperature co-fired ceramic substrate and a module cavity respectively, wherein the circuit components include microwave circuit components and digital circuit components; Step 2: Use Sn96.5Ag3.0Cu0.5 solder paste as solder and use a reflow soldering process to solder the components to be soldered in the circuit components on the low-temperature co-fired ceramic substrate; Step 2.1: Use an eraser or glue stick to wipe the pad surface of the low-temperature co-fired ceramic substrate, and then wipe it clean with an alcohol non-woven cloth; Step 2.2: Bake the plastic-encapsulated components at 125°C for at least 24 hours to complete the dehumidification process of the plastic-encapsulated components.

[0061] Step 2.3: Use a steel mesh to print paste Sn96.5Ag3.0Cu0.5 solder on the pad surface of the low-temperature co-fired ceramic substrate; Step 2.4: Place the components to be soldered on the low-temperature co-fired ceramic substrate manually or using automatic placement equipment, but keep the BGA packager unmounted; Step 2.5: Set the temperature to 240°C, set the reflow time to 70s, and use lead-free reflow soldering to solder the components to be soldered on the low-temperature co-fired ceramic substrate.

[0062] Step 3: Use Sn63Pb37 flake solder and vacuum furnace welding process to sinter the low-temperature co-fired ceramic substrate into the module cavity; Step 4: Use Sn63Pb37 solder and high-frequency induction welding process to weld the connector and insulator to the mounting holes of the module cavity respectively; Step 5: Use conductive silver glue to bond the components to be bonded in the circuit components on the low-temperature co-fired ceramic substrate; Step 6: interconnect the circuit components, connectors and insulators respectively through wire bonding; Step 7: Use conductive silver glue to bond the partition wall on the low temperature co-fired ceramic substrate; Step 8: After the partition wall is installed, use Sn63Pb37 solder to weld the BGA packaged devices in the circuit components on the low-temperature co-fired ceramic substrate.

[0063] Step 8.1: After the partition wall is installed, the surface of the pad on the low temperature co-fired ceramic substrate for connecting the BGA package device is surface treated; Step 8.1.1: Perform laser scanning on the surface of the pad for connecting the BGA package device on the low temperature co-fired ceramic substrate; Step 8.1.2: After stripping off the glass phase material, use a glue stick to wipe the surface of the pad for connecting the BGA package device after laser scanning, and then use an alcohol non-woven cloth to wipe it; Step 8.1.3: Use filamentous Sn63Pb37 solder to tin the surface of the pad used to connect the BGA package device to complete the surface treatment.

[0064] Step 8.4: Re-ball the solder balls of the BGA packaged device.

[0065] Step 8.4.1: Clean the solder balls on the BGA packaged devices; Step 8.4.2: Apply flux paste to the bottom of the BGA package device; Step 8.4.3: Place the Sn63Pb37 solder ball on the bottom of the BGA package device; Step 8.4.4: Place the BGA packaged device on a flat heating table or in a reflow oven, melt the Sn63Pb37 solder balls and solder them to the bottom of the BGA packaged device; Step 8.4.5: Use alcohol to clean the solder paste and complete the reballing process.

[0066] Step 8.2: Use a steel mesh to print paste Sn63Pb37 solder on the surface of the pad used to connect the BGA package device; Step 8.3: Set the peak temperature of the local heating temperature curve to 215°C, set the reflow time to 50s, locally heat the BGA packaged device to be soldered, and complete the soldering of the BGA packaged device; Step 9: Use laser welding process to seal the whole to form an airtight sealed cavity to complete the packaging of microwave digital integrated module.

[0067] The high-reliability and high-integration microwave digital integrated module packaging method of the present invention divides the welding of components on the low-temperature co-fired ceramic substrate into two processes, and sets the welding process of the BGA packaged device after the welding process of the other components, thereby avoiding the influence of the other sintering processes on the solder joints of the BGA packaged device. At the same time, the selectivity of the solder is increased, and the Sn63Pb37 solder with better wettability is used for welding, thereby improving the welding reliability of the BGA packaged device.

[0068] Before welding components to be welded on the low-temperature co-fired ceramic substrate, the present invention wipes the surface of the welding pad of the low-temperature co-fired ceramic substrate, thereby improving the state of the welding pad surface, improving the welding reliability and ensuring the welding quality.

[0069] Before welding the BGA packaged device on the low temperature co-fired ceramic substrate, the present invention performs laser scanning and wiping treatments on the pad surface of the low temperature co-fired ceramic substrate, effectively removing glass phase substances formed on the pad surface during the sintering process, improving the weldability of the pad and ensuring the welding quality.

[0070] The present invention performs re-balling processing on solder balls of non-Sn63Pb37 materials of BGA packaged devices, thereby greatly improving the reliability of solder joint interconnection of the BGA packaged devices.

[0071] Embodiment 3 like Figure 6 As shown, this embodiment provides a high-reliability and high-integration microwave digital integrated module, which is prepared using the high-reliability and high-integration microwave digital integrated module packaging method of Example 1, and includes: a microwave circuit 10, a digital circuit 20, a low-temperature co-fired ceramic substrate 30, a module cavity 40, a partition wall 50 and a cover plate 60.

[0072] The high-reliability and high-integration microwave digital integrated module of the present invention integrates the microwave circuit and the digital circuit on a low-temperature co-fired ceramic substrate, thereby greatly reducing the size of the module.

[0073] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that there is any such actual relationship or order between these entities or operations. Moreover, the term "include", "comprise" or any other variant is intended to cover non-exclusive inclusion, so that the article or device including a series of elements includes not only those elements, but also other elements that are not explicitly listed. In the absence of more restrictions, the elements defined by the sentence "including one..." do not exclude the existence of other identical elements in the article or device including the elements. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. The orientation or position relationship indicated by "up", "down", "left", "right", etc. is based on the orientation or position relationship shown in the accompanying drawings, which is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of the present invention.

[0074] The above contents are further detailed descriptions of the present invention in combination with specific preferred embodiments, and it cannot be determined that the specific implementation of the present invention is limited to these descriptions. For ordinary technicians in the technical field to which the present invention belongs, several simple deductions or substitutions can be made without departing from the concept of the present invention, which should be regarded as falling within the protection scope of the present invention.

Claims

1. A high-reliability and high-integration microwave digital integrated module packaging method, characterized in that: include: S1: preparing circuit components, a low-temperature co-fired ceramic substrate and a module cavity respectively, wherein the circuit components include microwave circuit components and digital circuit components; S2: using Sn96.5Ag3.0Cu0.5 solder and using a reflow soldering process to solder the components to be soldered in the circuit components on the low-temperature co-fired ceramic substrate; S3: using Sn63Pb37 solder and a vacuum furnace welding process to sinter the low temperature co-fired ceramic substrate in the module cavity; S4: Using Sn63Pb37 solder and high-frequency induction welding process, the connector and the insulator are respectively welded to the mounting holes of the module cavity; S5: using conductive silver glue to bond the components to be bonded in the circuit components onto the low-temperature co-fired ceramic substrate; S6: interconnecting the circuit components, the connector, and the insulator respectively through wire bonding; S7: using conductive silver glue to bond partition walls on the low temperature co-fired ceramic substrate; S8: After the partition wall is installed, use Sn63Pb37 solder to solder the BGA packaged components in the circuit components on the low-temperature co-fired ceramic substrate; S9: Use laser welding process to seal the whole to form an airtight sealed cavity, completing the packaging of the microwave digital integrated module.

2. The high-reliability and high-integration microwave digital integrated module packaging method according to claim 1, characterized in that: The S2 includes: S2.1: After wiping the pad surface of the low-temperature co-fired ceramic substrate with a deoxidizing eraser or glue stick, wipe it clean with an alcohol non-woven cloth; S2.2: The plastic-encapsulated components to be welded are subjected to baking and dehumidification treatment; S2.3: Printing Sn96.5Ag3.0Cu0.5 solder on the pad surface of the low temperature co-fired ceramic substrate using a steel mesh; S2.4: Mounting the components to be welded on the low-temperature co-fired ceramic substrate; S2.5: Using a lead-free reflow soldering process, soldering the components to be soldered on the low-temperature co-fired ceramic substrate.

3. The high-reliability and high-integration microwave digital integrated module packaging method according to claim 2, characterized in that: The S2.2 includes: baking the plastic-encapsulated components at a temperature of 125° C. for at least 24 hours to complete a dehumidification process on the plastic-encapsulated components.

4. The high-reliability and high-integration microwave digital integrated module packaging method according to claim 2, characterized in that: The S2.5 includes: soldering the components to be soldered on the low-temperature co-fired ceramic substrate using lead-free reflow soldering within a temperature range of 240° C. to 245° C., wherein the reflow time range of the lead-free reflow soldering is 60s to 90s.

5. The high-reliability and high-integration microwave digital integrated module packaging method according to claim 1, characterized in that: The S8 includes: S8.1: After the partition wall is installed, surface treatment is performed on the surface of the pad on the low temperature co-fired ceramic substrate for connecting the BGA packaged device; S8.2: Printing Sn63Pb37 solder on the surface of the pad for connecting the BGA package device using a steel mesh; S8.3: Locally heat the BGA packaged device to complete the welding of the BGA packaged device.

6. The high-reliability and high-integration microwave digital integrated module packaging method according to claim 5, characterized in that: The S8.1 includes: S8.1.1: Performing laser scanning on the surface of the pad for connecting the BGA packaged device on the low temperature co-fired ceramic substrate; S8.1.2: After wiping the surface of the pad for connecting the BGA package device after the laser scanning process with a glue stick, wipe it with an alcohol non-woven cloth; S8.1.3: Use Sn63Pb37 solder to tin the surface of the pad on the low-temperature co-fired ceramic substrate for connecting the BGA packaged device to complete the surface treatment.

7. The high-reliability and high-integration microwave digital integrated module packaging method according to claim 6, characterized in that: If the original solder ball material on the BGA packaged device is Sn96.5Ag3.0Cu0.5, Sn96.3Ag3.0Cu0.7, Sn20Pb80 or Sn10Pb90, the steps after S8.1 and before S8.2 also include: S8.4: Re-plant the original solder balls on the BGA packaged device.

8. The high-reliability and high-integration microwave digital integrated module packaging method according to claim 7, characterized in that: The S8.4 includes: S8.4.1: Clean the original solder balls on the BGA packaged device; S8.4.2: Apply flux paste to the bottom of the BGA package device; S8.4.3: Place Sn63Pb37 solder balls on the bottom of the BGA package device; S8.4.4: placing the BGA packaged device on a flat heating table or in a reflow oven, and melting the Sn63Pb37 solder ball and soldering it to the bottom of the BGA packaged device; S8.4.5: Clean the solder paste with alcohol and complete the reballing process.

9. The high-reliability and high-integration microwave digital integrated module packaging method according to claim 5, characterized in that: The S8.3 includes: The peak temperature range of the temperature curve of local heating is set to 215° C.±10° C., the reflow time is set to 40 s to 60 s, the BGA packaged device to be soldered is locally heated, and the soldering of the BGA packaged device is completed.

10. A high-reliability and high-integration microwave digital integrated module, characterized in that: The method is prepared by using the high-reliability and high-integration microwave digital integrated module packaging method as described in any one of claims 1 to 9 and a combination thereof.

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