Substrate processing apparatus, method for manufacturing semiconductor device, and program

Abstract

The substrate processing apparatus includes: a processing chamber for processing a substrate; at least one vaporizer that vaporizes a raw material supplied as a liquid and generates a raw material gas; at least two tanks for storing the raw material gas taken out from the gasifier; a pipe connecting the at least two tanks; a first valve provided in the pipe; and a gas supply unit that supplies the raw material gas from the at least two tanks into the processing chamber.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing device, a method for manufacturing a semiconductor device, and a program. Background Art

[0002] As one form of a substrate processing apparatus used in a manufacturing process of a semiconductor device, for example, a substrate processing apparatus that processes a plurality of substrates at a time is used (for example, Patent Document 1).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2011-129879 Summary of the invention

[0006] Problems to be solved by the invention

[0007] The present disclosure provides a technology capable of uniformly processing a plurality of substrates.

[0008] Solutions to Solve Problems

[0009] According to one solution of the present disclosure, a technology is provided, comprising:

[0010] a processing chamber that processes a substrate;

[0011] at least one gasifier that gasifies a raw material supplied in the form of a liquid to generate a raw material gas;

[0012] at least two tanks for storing the raw gas taken out from the gasifier;

[0013] a pipe connecting the at least two tanks;

[0014] A first valve provided on the pipe; and

[0015] A gas supply unit supplies the raw material gas from the at least two tanks into the processing chamber.

[0016] Effects of the Invention

[0017] According to one aspect of the present disclosure, a technology capable of uniformly processing a plurality of substrates can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is an explanatory diagram showing a schematic configuration example of a substrate processing apparatus according to one embodiment of the present disclosure.

[0019] Figure 2 It is an explanatory diagram showing a schematic configuration example of a substrate processing apparatus according to one embodiment of the present disclosure.

[0020] Figure 3 It is an explanatory diagram showing a schematic configuration example of a substrate processing apparatus according to one embodiment of the present disclosure.

[0021] Figure 4 This is an explanatory diagram for explaining a substrate support portion according to one embodiment of the present disclosure.

[0022] Figure 5 It is an explanatory diagram showing an example of a first gas supply system according to one embodiment of the present disclosure.

[0023] Figure 6 It is an explanatory diagram showing a second gas supply system according to one embodiment of the present disclosure.

[0024] Figure 7 It is an explanatory diagram for explaining a gas exhaust system according to one embodiment of the present disclosure.

[0025] Figure 8 This is an explanatory diagram for explaining a controller of a substrate processing apparatus according to one embodiment of the present disclosure.

[0026] Fig. 9 This is a flowchart illustrating a substrate processing flow according to one embodiment of the present disclosure.

[0027] Fig.10 This is a graph for explaining a control process during gas supply according to one embodiment of the present disclosure.

[0028] Fig.11 It is an explanatory diagram showing another example of the first gas supply system according to one embodiment of the present disclosure.

[0029] Fig.12 1 and 2 are explanatory diagrams showing another example of the first gas supply system according to one embodiment of the present disclosure, wherein (a) is a diagram showing a schematic overall configuration, and (b) is a diagram showing the periphery of a substrate as viewed from above. DETAILED DESCRIPTION

[0030] The following describes the embodiments of the present disclosure with reference to the accompanying drawings. In addition, the drawings used in the following description are all schematic, and the relationship between the dimensions of the elements in the drawings, the ratio of the elements, etc. do not necessarily correspond to reality. In addition, the relationship between the dimensions of the elements, the ratio of the elements, etc. do not necessarily correspond to each other in multiple drawings.

[0031] (1) Configuration of substrate processing apparatus

[0032] use Figure 1 to Figure 3 A schematic configuration of a substrate processing apparatus according to one embodiment of the present disclosure will be described. Figure 1 is a side sectional view of the substrate processing apparatus 100, Figure 2 yes Figure 1Here, for the sake of convenience of description, the nozzle 223 and the nozzle 225 are mentioned. Figure 3 2 is an explanatory diagram for explaining the relationship among the frame 227, the heater 211, and the distributing unit. For the sake of convenience of explanation, the distributing unit 222 and the nozzle 223 are described here, and the distributing unit 224 and the nozzle 225 are omitted.

[0033] (Overall composition)

[0034] The substrate processing apparatus 100 includes a housing 201 , and the housing 201 includes a reaction tube storage chamber 206 and a transfer chamber 217 . The reaction tube storage chamber 206 is disposed on the transfer chamber 217 .

[0035] The reaction tube housing chamber 206 includes: a cylindrical reaction tube 210 extending in the vertical direction, a heater 211 as a heating unit (furnace body) provided on the outer periphery of the reaction tube 210, a gas supply structure 212 as a gas supply unit, and a gas exhaust structure 213 as a gas exhaust unit. Here, the reaction tube 210 is also referred to as a processing chamber, and the space in the reaction tube 210 is also referred to as a processing space. The reaction tube 210 can accommodate a substrate support unit 300 described later.

[0036] The heater 211 is provided with a resistance heater on the inner surface opposite to the reaction tube 210 side, and a heat insulating portion is provided in a manner to surround them. Therefore, the outer side of the heater 211, that is, the side not opposite to the reaction tube 210, is configured to be less affected by heat. The heater control unit 211a is electrically connected to the resistance heater of the heater 211. By controlling the heater control unit 211a, the ON / OFF and heating temperature of the heater 211 can be controlled. The heater 211 can be heated to a temperature at which the gas described later can be thermally decomposed. In addition, the heater 211 is also called a processing chamber heating unit or a first heating unit.

[0037] The reaction tube housing chamber 206 includes a reaction tube 210, an upstream rectifying section 214, and a downstream rectifying section 215. The upstream rectifying section 214 may be included in the gas supply section. Furthermore, the downstream rectifying section 215 may be included in the gas exhaust section.

[0038] The gas supply structure 212 is provided upstream of the reaction tube 210 in the gas flow direction, and the gas is supplied to the reaction tube 210 from the gas supply structure 212. The gas exhaust structure 213 is provided downstream of the reaction tube 210 in the gas flow direction, and the gas in the reaction tube 210 is exhausted from the gas exhaust structure 213.

[0039] An upstream rectifying section 214 is provided between the reaction tube 210 and the gas supply structure 212 to rectify the flow of the gas supplied from the gas supply structure 212. That is, the gas supply structure 212 is adjacent to the upstream rectifying section 214. In addition, a downstream rectifying section 215 is provided between the reaction tube 210 and the gas exhaust structure 213 to rectify the flow of the gas exhausted from the reaction tube 210. The lower end of the reaction tube 210 is supported by a manifold 216.

[0040] The reaction tube 210, the upstream rectifying section 214, and the downstream rectifying section 215 are continuous structures, and are formed of materials such as quartz and SiC. They are composed of heat-transmitting members that transmit the heat radiated from the heater 211. The heat of the heater 211 heats the substrate S and the gas.

[0041] The frame constituting the gas supply structure 212 is made of metal, and the frame 227, which is a part of the upstream rectifying section 214, is made of quartz, etc. The gas supply structure 212 and the frame 227 are separable and are fixed via an O-ring 229. The frame 227 is connected to the connecting portion 206a on the side of the reaction tube 210.

[0042] The frame 227 extends in a direction different from the reaction tube 210 when viewed from the reaction tube 210 side, and is connected to a gas supply structure 212 described later. The heater 211 and the frame 227 are adjacent to each other at an adjacent portion 227b between the reaction tube 210 and the gas supply structure 212. The adjacent portion is referred to as an adjacent portion 227b.

[0043] (Gas supply structure)

[0044] When viewed from the reaction tube 210, the gas supply structure 212 is disposed at a deeper side than the adjacent portion 227b. The gas supply structure 212 includes: a distribution portion 224 that can be connected to a gas supply pipe 261 described later; and a distribution portion 222 that can be connected to a gas supply pipe 251. A plurality of nozzles 223 are disposed on the downstream side of the distribution portion 222, and a plurality of nozzles 225 are disposed downstream of the distribution portion 224. A plurality of nozzles are arranged in the vertical direction. Figure 1 The distribution unit 222 and the nozzle 223 are described in the figure.

[0045] As described later, the distribution unit 222 is configured to distribute the raw material gas, and is therefore also referred to as a raw material gas distribution unit. The nozzle 223 supplies the raw material gas, and is therefore also referred to as a raw material gas supply nozzle.

[0046] In addition, the distribution unit 224 is configured to distribute the reaction gas, and is therefore also referred to as a reaction gas distribution unit. The nozzle 225 supplies the reaction gas, and is therefore also referred to as a reaction gas supply nozzle.

[0047] The distribution unit 222 is as follows Figure 1As shown, the distribution unit 222 is divided into at least two parts (only two cases are illustrated in the figure). Specifically, the distribution unit 222 is composed of a first distribution unit 2221 and a second distribution unit 2222. The first distribution unit 2221 and the second distribution unit 2222 are used to supply the raw material gas to different areas of the substrate support unit 300 described later. In addition, the first distribution unit 2221 and the second distribution unit 2222 can also be configured in the same manner, or as shown in the figure, their respective configurations (for example, the number of downstream nozzles 223) are different.

[0048] The distributing unit 224 is different from the distributing unit 222 in that it is not divided but is composed of one part. However, it may be divided into at least two parts like the distributing unit 222.

[0049] The gas supply pipe 251 connected to the distribution unit 222 and the gas supply pipe 261 connected to the distribution unit 224 supply different types of gases as described later. Figure 2 As shown, the nozzle 223 provided downstream of the distribution unit 222 and the nozzle 225 provided downstream of the distribution unit 224 are arranged in a side-by-side relationship. Here, in the horizontal direction, the nozzle 223 is arranged at the center of the frame 227, and the nozzles 225 are arranged on both sides thereof. The nozzles arranged on both sides are respectively referred to as nozzles 225a and 225b.

[0050] like Figure 3 As shown, a plurality of ejection holes 222c are provided in the distribution part 222 (i.e., each of the first distribution part 2221 and the second distribution part 2222). The ejection holes 222c are arranged so as not to overlap in the vertical direction. The plurality of nozzles 223 are connected in such a manner that the ejection holes 222c provided in the distribution part 222 are connected to the inside of each nozzle 223. The nozzles 223 are arranged in the vertical direction and are arranged between the partition plates 226 described later, or between the frame 227 and the partition plates 226.

[0051] The distribution unit 222 (ie, each of the first distribution unit 2221 and the second distribution unit 2222) includes a distribution structure 222a and an introduction pipe 222b connected to the nozzle 223. The introduction pipe 222b is configured to communicate with a gas supply pipe 251 of the gas supply unit 250 described later.

[0052] The distribution structure 222a is disposed at a position deeper than the heater 211 when viewed from the reaction tube 210. Therefore, the distribution structure 222a is disposed at a position where it is not easily affected by the heater 211.

[0053] An upstream heater 228 capable of heating at a lower temperature than the heater 211 is provided around the gas supply structure 212 and the frame 227. The upstream heater 228 is configured to include two heaters 228a and 228b. Specifically, an upstream heater 228a is provided around the surface of the frame 227 between the gas supply structure 212 and the adjacent portion 227b. In addition, an upstream heater 228b is provided around the gas supply structure 212. In addition, the upstream heater 228 is also called an upstream heating unit or a second heating unit.

[0054] Here, the low temperature refers to, for example, a temperature at which the gas supplied into the distribution unit 222 is not reliquefied, and further refers to a temperature at which the gas is maintained in a low decomposition state.

[0055] The distribution unit 224 is similar to the distribution unit 222, and includes a distribution structure 224a and an introduction pipe 224b connected to the nozzle 225. The introduction pipe 224b is configured to communicate with a gas supply pipe 261 of a gas supply unit 260 described later. The distribution unit 224 is connected to the plurality of nozzles 225 in such a manner that a hole 224c provided in the distribution unit 224 communicates with the interior of each nozzle 225. Figure 2 As described above, a plurality of, for example, two, distributing parts 224 and nozzles 225 are provided, and the gas supply pipe 261 is configured to communicate with each of them. The plurality of nozzles 225 are arranged at line-symmetrical positions with, for example, the nozzle 223 as the center.

[0056] By providing the distribution part and the nozzle for each gas to be supplied, the gases supplied from the gas supply pipes are prevented from mixing in the gas distribution parts, so that the generation of particles due to the mixing of gases in the distribution part 224 can be suppressed.

[0057] At least a portion of the upstream heater 228a is arranged parallel to the extending direction of the nozzles 223 and 225. At least a portion of the upstream heater 228b is arranged along the arrangement direction of the distribution unit 222. By doing so, a low temperature can be maintained even in the nozzles and the distribution unit.

[0058] The heater control units 228c and 228d are electrically connected to the upstream heater 228. Specifically, the heater control unit 228c is connected to the upstream heater 228a, and the heater control unit 228d is connected to the upstream heater 228b. By controlling the heater control units 228c and 228d, the ON / OFF and heating temperature of the heater 228 can be controlled. In addition, two heater control units 228c and 228d are used for illustration here, but it is not limited to this. As long as the required temperature control can be achieved, one heater control unit or more than three heater control units can also be used. In addition, the upstream heater 228 is also called a second heater.

[0059] The upstream heater 228 is a detachable structure, and when the gas supply structure 212 is separated from the frame 227, it can be removed from the gas supply structure 212 and the frame 227. In addition, it can be fixed to various parts, and when the gas supply structure 212 is separated from the frame 227, it can also be kept fixed to the gas supply structure 212 and the frame 227 and the gas supply structure 212 and the frame 227 can be separated.

[0060] A metal cover 212a made of metal, for example, may be provided as a cover between the upstream heater 228a and the frame 227. By providing the metal cover 212a, the heat generated by the upstream heater 228a can be efficiently supplied to the frame 227. In particular, since the frame 227 is made of quartz, there is a concern about heat escape, but by providing the metal cover 212a, heat escape can be suppressed. Therefore, excessive heating is not required, and the power supply to the heater 228 can be suppressed.

[0061] A metal cover 212b may be provided between the upstream heater 228b and the frame constituting the gas supply structure 212. By providing the metal cover 212b, the heat generated from the upstream heater 228b can be efficiently supplied to the distribution unit. Therefore, the power supply to the upstream heater 228 can be suppressed.

[0062] (Upstream side rectification section)

[0063] The upstream rectifying section 214 includes a frame 227 and a partitioning plate 226. The portion of the partitioning plate 226 as a partitioning section that is opposite to the substrate S extends in the horizontal direction in a manner that is at least larger than the diameter of the substrate S. The so-called horizontal direction here refers to the side wall direction of the frame 227. A plurality of partitioning plates 226 are arranged in the vertical direction in the frame 227. The partitioning plates 226 are fixed to the side walls of the frame 227, and are configured so that the gas does not exceed the partitioning plates 226 and move to the adjacent area below or above. By setting it not to exceed, the airflow described later can be surely formed.

[0064] The partition plates 226 are continuous structures without holes. Each partition plate 226 is set at a position corresponding to the substrate S. Nozzles 223 and 225 are provided between the partition plates 226 and between the partition plates 226 and the frame 227. That is, at least each partition plate 226 is provided with a nozzle 223 and a nozzle 225. By setting such a structure, a process using the first gas and the second gas can be performed between each partition plate 226 and between the partition plate 226 and the frame 227. Therefore, the processing can be set to a uniform state between multiple substrates S.

[0065] In addition, the distances between each partition plate 226 and the nozzle 223 disposed above it are preferably the same. That is, the nozzle 223 and the partition plate 226 or the frame 227 disposed below it are configured to be disposed at the same height. By setting it in this way, the distance from the front end of the nozzle 223 to the partition plate 226 can be set to be the same, so that the resolution on the substrate S can be made uniform among multiple substrates.

[0066] The gas ejected from the nozzles 223 and 225 is regulated by the partition plate 226 and supplied to the surface of the substrate S. Since the partition plate 226 extends in the horizontal direction and is a continuous structure without holes, the movement of the main flow of the gas in the vertical direction is suppressed and the gas moves in the horizontal direction. Therefore, the pressure loss of the gas reaching each substrate S can be made uniform in the vertical direction.

[0067] In this embodiment, the diameter of the discharge hole 222 c provided in the distribution portion 222 is configured to be smaller than the distance between the partition plates 226 or the distance between the frame 227 and the partition plate 226 .

[0068] (Downstream side rectification section)

[0069] The downstream side rectifying portion 215 is configured such that, when the substrate S is supported by the substrate supporting portion 300 , the top portion is higher than the position of the uppermost substrate S arranged on the substrate supporting portion 300 , and the bottom portion is lower than the position of the lowermost substrate S arranged on the substrate supporting portion 300 .

[0070] The downstream rectifying section 215 includes a frame 231 and a partitioning plate 232. The portion of the partitioning plate 232 that is opposite to the substrate S extends in the horizontal direction in a manner that is at least larger than the diameter of the substrate S. The so-called horizontal direction here refers to the side wall direction of the frame 231. In addition, a plurality of partitioning plates 232 are arranged in the vertical direction. The partitioning plate 232 is fixed to the side wall of the frame 231, and is configured so that the gas will not exceed the partitioning plate 232 and move to the adjacent area below or above. By setting it not to exceed, the airflow described later can be reliably formed. A flange 233 is provided on the side of the frame 231 that contacts the gas exhaust structure 213.

[0071] The dividing plate 232 is a continuous structure without holes. The dividing plate 232 is set at positions corresponding to the substrate S, and corresponds to the position of the dividing plate 226. The corresponding dividing plates 226 and 232 are preferably set to the same height. Further, when processing the substrate S, it is preferred to make the height of the substrate S consistent with the height of the dividing plates 226 and 232. By setting it as such a structure, the gas supplied from each nozzle forms a flow through the dividing plate 226, the substrate S, and the dividing plate 232 as shown by the arrows in the figure. At this time, the dividing plate 232 extends in the horizontal direction and is a continuous structure without holes. By setting it as such a structure, the pressure loss of the gas discharged from each substrate S can be made uniform. Therefore, the flow of the gas flow through each substrate S in the vertical direction is suppressed, and it is formed in the horizontal direction toward the exhaust structure 213.

[0072] By setting the partitioning plate 226 and the partitioning plate 232, the pressure loss can be made uniform in the vertical direction upstream and downstream of each substrate S, so that a horizontal airflow with suppressed flow in the vertical direction can be reliably formed on the partitioning plate 226, the substrate S and the partitioning plate 232.

[0073] (Gas exhaust structure)

[0074] The gas exhaust structure 213 is provided downstream of the downstream side rectifying section 215. The gas exhaust structure 213 is mainly composed of a frame 241 and a gas exhaust pipe connection section 242. A flange 243 is provided on the downstream side rectifying section 215 side of the frame 241.

[0075] The gas exhaust structure 213 is connected to the space of the downstream side rectifying section 215. The frame 231 and the frame 241 are highly continuous structures. The top of the frame 231 is configured to be the same height as the top of the frame 241, and the bottom of the frame 231 is configured to be the same height as the bottom of the frame 241.

[0076] The gas that has passed through the downstream side rectifying section 215 is exhausted from the exhaust hole 244. At this time, since the gas exhaust structure does not have a structure such as a partition plate, an airflow including a vertical direction is formed toward the gas exhaust hole.

[0077] The transfer chamber 217 is provided at the lower part of the reaction tube 210 via the manifold 216. In the transfer chamber 217, a substrate S is placed (mounted) on a substrate support (hereinafter also referred to as a wafer boat) 300 by a vacuum transfer robot (not shown), or the substrate S is taken out from the substrate support 300 by a vacuum transfer robot.

[0078] The transfer chamber 217 can accommodate the substrate support 300, the partition support part 310, and the vertical direction driving mechanism part 400 constituting the first driving part for driving the substrate support 300 and the partition support part 310 (collectively referred to as the substrate holder) in the vertical direction and the rotation direction. Figure 1 , the substrate holder 300 is shown to be raised by the vertical direction driving mechanism 400 and is accommodated in the reaction tube.

[0079] (Substrate holding portion)

[0080] Next, use Figure 1 , Figure 4 The details of the substrate supporting portion will be described.

[0081] Figure 4 It is an explanatory diagram for explaining the substrate supporting portion.

[0082] The substrate support portion is composed of at least a substrate support member 300, and the substrate S is transferred through the substrate transfer port 149 by a vacuum transfer robot inside the transfer chamber 217, or the transferred substrate S is transferred to the inside of the reaction tube 210 to form a thin film on the surface of the substrate S. In addition, it is also conceivable to include the partition support portion 310 in the substrate support portion.

[0083] The partition support 310 has a plurality of disk-shaped partitions 314 fixed at predetermined intervals on pillars 313 supported between a base 311 and a top plate 312. The substrate support 300 has a plurality of support rods 315 supported on a base 311, and has a structure for supporting a plurality of substrates S at predetermined intervals by the plurality of support rods 315.

[0084] A plurality of substrates S are placed at predetermined intervals on the substrate support 300 via a plurality of support rods 315 supported by a base 311. The plurality of substrates S supported by the support rods 315 are separated by a disk-shaped partition 314, and the disk-shaped partition 314 is fixed (supported) to a support column 313 supported by a partition support portion 310 at predetermined intervals. Here, the partition 314 is disposed on either or both of the upper portion and the lower portion of the substrate S.

[0085] The predetermined intervals between the plurality of substrates S placed on the substrate support 300 are the same as the upper and lower intervals between the partitions 314 fixed to the partition support 310. In addition, the diameter of the partition 314 is formed to be larger than the diameter of the substrate S.

[0086] The substrate support 300 supports a plurality of substrates S, for example, five substrates S, in multiple stages in the vertical direction through a plurality of support rods 315. The base 311 and the plurality of support rods 315 are formed of materials such as quartz, SiC, etc. In addition, an example in which five substrates S are supported by the substrate support 300 is shown here, but it is not limited to this. For example, the substrate support 300 may also be configured to support 5 to 50 substrates S. In addition, the partition 314 of the partition support portion 310 is also called a separator.

[0087] That is, the substrate support 300 is configured to carry a plurality of substrates S. In addition, as will be described in detail later, the plurality of substrates S held on the substrate support 300 are divided into at least two regions (e.g., an upper region and a lower region) in the carrying direction. Furthermore, the first distribution portion 2221 and the second distribution portion 2222 constituting the distribution portion 222 are arranged in a manner corresponding to the respective divided regions.

[0088] The partition support part 310 and the substrate support 300 are driven by the vertical direction driving mechanism part 400 in the vertical direction between the reaction tube 210 and the transfer chamber 217 and in the rotation direction around the center of the substrate S supported by the substrate support 300 .

[0089] The vertical driving mechanism unit 400 constituting the first driving unit includes a vertical driving motor 410, a rotation driving motor 430, and a boat vertical mechanism 420 as driving sources. The boat vertical mechanism 420 includes a linear actuator as a substrate support lifting mechanism for driving the substrate support 300 in the vertical direction.

[0090] (Gas supply system)

[0091] Next, the details of the gas supply system will be described.

[0092] The gas supply system includes a first gas supply system that supplies gas via the gas supply pipe 251 and a second gas supply system that supplies gas via the gas supply pipe 261 .

[0093] (First gas supply system)

[0094] Figure 5 It is an explanatory diagram showing an example of the first gas supply system.

[0095] As described above, the distribution unit 222 includes the first distribution unit 2221 and the second distribution unit 2222. Accordingly, the gas supply pipe 251 includes the first gas supply pipe 2511 communicating with the first distribution unit 2221 and the second gas supply pipe 2512 communicating with the second distribution unit 2222.

[0096] The first gas supply pipe 2511 is provided with, in order from the upstream side, a third valve 2521 which is an on-off valve, a mass flow controller (MFC) 2531 which is a flow controller (flow control unit), a first flash tank (hereinafter also referred to as "first tank") 2541 which is a gas storage container, and a second valve 2551. A digital gauge 2511a may be connected to the first gas supply pipe 2511.

[0097] The second gas supply pipe 2512 is also provided with a third valve 2522, an MFC 2532, a second flash tank (hereinafter also referred to as "second tank") 2542, and a second valve 2552 in order from the upstream side. The second gas supply pipe 2512 may be connected to a digital meter 2512a.

[0098] The first tank 2541 and the second tank 2542 are connected to each other via a pipe 258. The pipe 258 is provided with a first valve 259 which is an on-off valve.

[0099] On the upstream side of the third valves 2521 and 2522, the first gas supply pipe 2511 and the second gas supply pipe 2512 merge and are connected to one gas supply pipe 251. The gas supply pipe 251 includes a liquid source vaporizer 256 and a mass flow meter (MFM) 257 in this order from the upstream side.

[0100] The liquid source vaporizer 256 vaporizes the raw material supplied in the form of a liquid to generate a raw material gas. Hereinafter, the liquid source vaporizer may be simply referred to as a "vaporizer".

[0101] The raw material gas generated by the vaporizer 256 is a first gas containing a first element (also referred to as "first element-containing gas"), which is one of the processing gases. Specifically, the raw material gas is, for example, a gas in which at least two silicon atoms (Si) are bonded, a gas containing Si and chlorine (Cl), a gas containing Si-Si bonds such as hexachlorosilane (Si2Cl6, hexachlorodisilane, abbreviated as: HCDS) gas.

[0102] The first gas supply system (also referred to as "raw material gas supply system") 250 is mainly composed of a gas supply pipe 251, a first gas supply pipe 2511, a second gas supply pipe 2512, a first tank 2541, a second tank 2542, a pipe 258, a first valve 259, second valves 2551, 2552, and third valves 2521, 2522. A liquid source vaporizer 256 may also be added to the first gas supply system 250. According to the raw material gas supply system 250 thus constructed, by using the first tank 2541 and the second tank 2542, it is possible to supply the raw material gas to the reaction tube (processing chamber) 210 at a large flow rate in a short time as described in detail later.

[0103] That is, the source gas supply system 250 includes a gas supply unit 250 a that supplies the source gas from the first tank 2541 and the second tank 2542 into the processing chamber 210 .

[0104] The gas supply unit 250a is roughly divided into a portion corresponding to the first tank 2541 and a portion corresponding to the second tank 2542. This means that the same number of gas supply units 250a as the first tank 2541 and the second tank 2542 are provided.

[0105] Specifically, the portion corresponding to the first tank 2541 in the gas supply unit 250a is mainly composed of a first gas supply pipe 2511 extending from the first tank 2541 and a second valve 2551 disposed on the first gas supply pipe 2511. It is also conceivable that the corresponding portion includes a first distribution unit 2221 communicating with the first gas supply pipe 2511 and a nozzle 223 provided in the first distribution unit 2221.

[0106] In addition, the portion corresponding to the second tank 2542 in the gas supply unit 250a is mainly composed of a second gas supply pipe 2512 extending from the second tank 2542 and a second valve 2552 disposed on the second gas supply pipe 2512. It is also conceivable that the corresponding portion includes a second distribution unit 2222 communicating with the second gas supply pipe 2512 and a nozzle 223 provided in the second distribution unit 2222.

[0107] As described above, in the gas supply unit 250 a , second valves 2551 and 2552 are provided between the first tank 2541 and the second tank 2542 and the processing chamber 210 , respectively.

[0108] In addition, since the gas supply part 250 a corresponds to each of the first distributing part 2221 and the second distributing part 2222 , the source gas is supplied to each of at least two divided regions in the substrate loading direction of the substrate support 300 .

[0109] In addition, since the gas supply unit 250 a supplies the source gas to each of the plurality of substrates S held on the substrate support 300 via the nozzles 223 provided in the distribution unit 222 .

[0110] In addition, in the raw material gas supply system 250, an inert gas supply pipe (not shown) for supplying an inert gas such as nitrogen (N2) gas from an inert gas source (not shown) may be connected to the first gas supply pipe 2511 and the second gas supply pipe 2512. The inert gas supply pipe may also be connected to the gas supply pipe 251.

[0111] (Second gas supply system)

[0112] Figure 6 It is an explanatory diagram showing the second gas supply system.

[0113] As shown in the figure, the second gas source 262, the MFC 263, and the valve 264 are provided in order from the upstream direction in the gas supply pipe 261. The gas supply pipe 261 is connected to the introduction pipe 224b of the distribution unit 224.

[0114] The second gas source 262 is a source of a second gas containing a second element (hereinafter also referred to as "second element-containing gas"). The second element-containing gas is one of the processing gases. In addition, the second element-containing gas can also be considered as a reaction gas or a modified gas.

[0115] Here, the second element-containing gas contains a second element different from the first element. The second element is, for example, any one of oxygen (O), nitrogen (N), and carbon (C). In this embodiment, the second element-containing gas is, for example, a nitrogen-containing gas. Specifically, a nitride-based gas containing an NH bond, such as ammonia (NH3), diimide (N2H2) gas, hydrazine (N2H4) gas, or N3H8 gas.

[0116] The second gas supply system (also referred to as “reaction gas supply system”) 260 is mainly composed of the gas supply pipe 261 , the MFC 263 , and the valve 264 .

[0117] A gas supply pipe 265 is connected to the downstream side of the valve 264 in the supply pipe 261. In the gas supply pipe 265, an inert gas source 266, an MFC 267, and a valve 268 are provided in order from the upstream direction. The inert gas source 266 supplies an inert gas, for example, N2 gas.

[0118] The second inert gas supply system is mainly composed of the gas supply pipe 265, the MFC 267, and the valve 268. The inert gas supplied from the inert gas source 266 functions as a purge gas for purifying the gas remaining in the reaction tube 210 during the substrate processing step. The second inert gas supply system 260 may also be added.

[0119] (Exhaust system)

[0120] Next, the gas exhaust system will be described.

[0121] Figure 7 It is an explanatory diagram showing a gas exhaust system.

[0122] As shown in the figure, the exhaust system 280 for exhausting the atmosphere of the reaction tube 210 includes an exhaust pipe 281 communicating with the reaction tube 210 , and is connected to the housing 241 via an exhaust pipe connection portion 242 .

[0123] The exhaust pipe 281 is connected to a vacuum pump 284 as a vacuum exhaust device via a valve 282 as an on-off valve and an APC (AutoPressure Controller) valve 283 as a pressure regulator (pressure adjustment unit), and is configured to be able to vacuum exhaust the pressure in the reaction tube 210 to a predetermined pressure (vacuum degree). The exhaust system 280 is also called a process chamber exhaust system.

[0124] (Controller)

[0125] Next, the controller will be described.

[0126] Figure 8 This is an explanatory diagram for explaining a controller of a substrate processing apparatus.

[0127] The substrate processing apparatus 100 includes a controller 600 that controls the operation of each unit of the substrate processing apparatus 100 .

[0128] The control unit (control unit), i.e., the controller 600, is configured as a computer including a CPU (Central Processing Unit) 601, a RAM (Random Access Memory) 602, a storage unit 603 as a storage unit, and an I / O port 604. The RAM 602, the storage unit 603, and the I / O port 604 are configured to exchange data with the CPU 601 via an internal bus 605. The transmission and reception of data within the substrate processing apparatus 100 is performed based on the instruction of the transmission and reception instruction unit 606, which is also a function of the CPU 601.

[0129] The controller 600 is provided with a network transceiver 683 connected to the host device 670 via a network. The network transceiver 683 can receive the processing history of the substrate S accommodated in the cassette 111, information on a scheduled process, and the like from the host device.

[0130] The storage unit 603 is composed of, for example, a flash memory, a HDD (Hard Disk Drive), etc. The storage unit 603 readablely stores a control program for controlling the operation of the substrate processing apparatus, a recipe recording steps or conditions for substrate processing, and the like.

[0131] In addition, the process recipe is combined so that the controller 600 executes each step in the substrate processing process described later, and a predetermined result can be obtained, and it functions as a program. Hereinafter, the process recipe, control program, etc. are also collectively referred to as a program. In addition, when the term program is used in this specification, sometimes only the process recipe alone is included, sometimes only the control program alone is included, or sometimes both of them are included. In addition, the RAM 602 is configured as a storage area (work area) for temporarily holding programs or data read by the CPU 601.

[0132] The I / O port 604 is connected to each structure of the substrate processing apparatus 100. The CPU 601 is configured to read out the control program from the storage unit 603 and execute it, and read out the process recipe from the storage unit 603 according to the input of the operation instruction from the input / output device 681. Furthermore, the CPU 601 is configured to control the substrate processing apparatus 100 according to the content of the read process recipe.

[0133] The CPU 601 has a sending and receiving instruction unit 606. The controller 600 uses an external storage device (such as a disk such as a hard disk, an optical disk such as a DVD, an optical disk such as an MO, a semiconductor memory such as a USB memory) 682 that stores the above-mentioned program to install the program on a computer, etc., thereby constituting the controller 600 of this method. In addition, the means for supplying the program to the computer is not limited to the case where it is supplied via the external storage device 682. For example, a communication means such as the Internet or a dedicated line may also be used, and the program may not be supplied via the external storage device 682. In addition, the storage unit 603 and the external storage device 682 are configured as a computer-readable storage medium. Hereinafter, they may also be collectively referred to as storage media. In addition, when the term storage medium is used in this specification, sometimes only the storage unit 603 alone is included, sometimes only the external storage device 682 alone is included, or sometimes both of them are included.

[0134] (2) Steps of the substrate processing process

[0135] Next, as one process of semiconductor manufacturing process, a process of forming a thin film on a substrate S using the substrate processing apparatus 100 having the above-described structure will be described. In the following description, the operation of each unit constituting the substrate processing apparatus is controlled by the controller 600 .

[0136] Here, using Fig. 9 A film forming process in which a film is formed on the substrate S by alternately supplying the first gas and the second gas will be described.

[0137] Fig. 9 is a flow chart illustrating the substrate processing flow.

[0138] (Transfer Chamber Pressure Adjustment Step: S202)

[0139] First, the transfer chamber pressure adjustment process (S202) is described. Here, the pressure in the transfer chamber 217 is set to the same level as the pressure of the vacuum transfer chamber 140. Specifically, the exhaust system (not shown) connected to the transfer chamber 217 is operated to exhaust the atmosphere of the transfer chamber 217 so that the atmosphere of the transfer chamber 217 becomes a vacuum level.

[0140] In addition, the heater 282 may be operated in parallel with this step. Specifically, the heater 282a and the heater 282b may be operated separately. When the heater 282 is operated, it is operated at least during the film treatment step 208 described later.

[0141] (Substrate loading process: S204)

[0142] Next, the substrate carrying-in step ( S204 ) will be described.

[0143] When the transfer chamber 217 reaches the vacuum level, the transfer of the substrate S begins. When the substrate S reaches the vacuum transfer chamber 140 , a gate valve (not shown) adjacent to the substrate loading port 149 is opened, and the substrate S is transferred from the adjacent vacuum transfer chamber (not shown) to the transfer chamber 217 .

[0144] At this time, the substrate support 300 is on standby in the transfer chamber 217, and the substrates S are transferred to the substrate support 300. Once a predetermined number of substrates S are transferred to the substrate support 300, the vacuum transfer robot is retracted to the frame 141, and the substrate support 300 is raised to move the substrates S into the reaction tube 210.

[0145] During the movement into the reaction tube 210 , the surface of the substrate S is positioned to coincide with the heights of the dividing plates 226 and 232 .

[0146] (Heating process: S206)

[0147] The heating process (S206) is described. Once the substrate S is moved into the reaction tube 210, the pressure inside the reaction tube 210 is controlled to a predetermined pressure, and the heater 211 is controlled so that the surface temperature of the substrate S becomes a predetermined temperature. The temperature is a high temperature zone described later, for example, heated to above 400°C and below 800°C. Preferably, it is above 500°C and below 700°C. The pressure can be considered to be set to 50 to 5000 Pa, for example. At this time, when the upstream heating section 228 is operated, the gas passing through the distribution section 222 is controlled to be a low decomposition temperature zone or an undecomposed temperature zone described later, and heated to a temperature at which it will not reliquefy. For example, the gas is heated to about 300°C.

[0148] (Membrane treatment process: S208)

[0149] The film treatment process (S208) is described. After the heating process (S206), the film treatment process (S208) is performed. In the film treatment process (S208), according to the process recipe, the raw gas (first gas) supply system 250 is controlled to supply the first gas into the reaction tube 210, and the exhaust system 280 is controlled to exhaust the treatment gas from the reaction tube 210 to perform film treatment. In addition, the reaction gas (second gas) supply system 260 is controlled so that the second gas and the first gas are simultaneously present in the treatment space to perform CVD treatment, or the first gas and the second gas may be alternately supplied into the reaction tube 210 to perform alternating supply treatment. In addition, when the second gas is set to a plasma state for treatment, it may be set to a plasma state using a plasma generating unit not shown.

[0150] As a specific example of the film treatment method, the following method can be considered as an alternating supply process. For example, in the first step, a first gas is supplied into the reaction tube 210, and in the second step, a second gas is supplied into the reaction tube 210. As a purge step, an inert gas is supplied into the reaction tube 210 between the first step and the second step, and the atmosphere of the reaction tube 210 is exhausted. The alternating supply process of the combination of the first step, the purge step, and the second step is performed multiple times to form a desired film.

[0151] The supplied gas forms an airflow in the upstream rectifying section 214, the space on the substrate S, and the downstream rectifying section 215. At this time, the gas is supplied to the substrate S without pressure loss on each substrate S, so that each substrate S can be processed uniformly.

[0152] (Substrate unloading process: S210)

[0153] The substrate unloading step ( S210 ) is described below. In the substrate unloading step ( S210 ), the processed substrate S is unloaded out of the transfer chamber 217 in a procedure opposite to the above-mentioned substrate loading step S204 .

[0154] (Judgment: S212)

[0155] Determination (S212) is described. Here, it is determined whether the substrate has been processed a predetermined number of times. If it is determined that the substrate has not been processed a predetermined number of times, the process returns to the loading step (S204) to process the next substrate S. If it is determined that the substrate has been processed a predetermined number of times, the process ends.

[0156] In addition, the above-mentioned airflow is formed horizontally, but as long as the mainstream of the gas is formed in the horizontal direction as a whole, the airflow may be diffused in the vertical direction as long as it does not affect the uniform processing of multiple substrates.

[0157] In addition, there are expressions such as the same degree, the same, and the equivalent in the above, but of course they include those that are essentially the same.

[0158] (3) Control processing during gas supply

[0159] Next, a control process when the source gas is supplied as the first gas to the reaction tube (processing chamber) 210 in the film processing step ( S208 ) of the above-mentioned substrate processing step will be described.

[0160] When supplying the raw material gas, first, Figure 5 In the process, the third valve 2521 of the first gas supply pipe 2511 is opened, and the second valve 2551 is closed, thereby filling the first tank 2541 with the raw material gas. Similarly, the third valve 2522 of the second gas supply pipe 2512 is opened, and the second valve 2552 is closed, thereby filling the second tank 2542 with the raw material gas.

[0161] The gas filling into the first tank 2541 and the second tank 2542 is performed until the gas filling amount reaches the range of 30kPa to 50kPa, for example, when the capacity of each tank is 1000cc. In addition, the description of the numerical range such as "30kPa to 50kPa" in this specification means that the lower limit and the upper limit are included in the range. Therefore, for example, the so-called "30kPa to 50kPa" means "30kPa or more and 50kPa or less". The same applies to other numerical ranges.

[0162] Then, after the gas is filled into the first tank 2541 and the second tank 2542, the third valve 2521 of the first gas supply pipe 2511 is set to a closed state, and the second valve 2551 is set to an open state. Further, the third valve 2522 of the second gas supply pipe 2512 is set to a closed state, and the second valve 2552 is set to an open state. Thus, the raw material gas accumulated in the first tank 2541 and the second tank 2542 is supplied to the processing chamber 210 at a large flow rate in a short time.

[0163] However, when gas is supplied using a plurality of first tanks 2541 and second tanks 2542, the following problems may occur. For example, if the conductances of the gas flow paths from the liquid source vaporizer 256 to the first tank 2541 and the second tank 2542 are different, the gas filling amounts to the first tank 2541 and the second tank 2542 may be uneven. If the gas filling amounts are uneven, the influence may affect the gas supply to the processing chamber 210, and as a result, the film forming conditions of the substrate S may be different in the corresponding areas of the first distribution part 2221 and the corresponding areas of the second distribution part 2222.

[0164] In this regard, in the substrate processing apparatus 100 of this embodiment, the first tank 2541 and the second tank 2542 are connected by a pipe 258, and a first valve 259 is provided on the pipe 258. When the first tank 2541 and the second tank 2542 are used to supply gas, the controller 600 performs the control process described below.

[0165] Fig.10 This is a diagram for explaining the control process during gas supply.

[0166] In the figure, the first valve 259 is simply referred to as “AV (air valve) 259 .” The same applies to the second valves 2551 , 2552 , and the third valves 2521 , 2522 .

[0167] like Fig.10 As shown, when supplying the raw material gas, first, the controller 600 sets AV2521 and 2522 to an open state, and sets the other AV2551, 2552, and 259 to a closed state. Thus, the raw material gas is filled into the first tank 2541 and the second tank 2542 (S301). Then, once the gas filling amount into the first tank 2541 and the second tank 2542 reaches within a predetermined range, the AV2521 and 2522 are set to a closed state, and the gas filling into the first tank 2541 and the second tank 2542 is completed (S302).

[0168] Then, at a predetermined timing before the gas supply to the processing chamber 210 is started (for example, the timing immediately before the start), the controller 600 sets the AV 259 to an open state. The other AVs 2521, 2522, 2551, and 2552 are kept closed. As a result, the first tank 2541 and the second tank 2542 are connected via the pipe 258, and the first tank 2541 and the second tank 2542 are pressurized (S303). That is, the gas filling amount in the first tank 2541 and the gas filling amount in the second tank 2542 become uniform.

[0169] Then, after a predetermined time (for example, sufficient time required for isobaricization) has passed since AV259 was set to an open state, the controller 600 sets AV259 to a closed state. Further, the controller 600 turns off AV259 and sets AV2551 and 2552 to an open state. However, AV2521 and 2522 are kept in a closed state. Thus, gas is supplied from each of the first tank 2541 and the second tank 2542 to the processing chamber 210 (S304). That is, after the controller 600 opens AV259 and sets the first tank 2541 and the second tank 2542 to the same pressure, the raw material gas is supplied to the processing chamber 210.

[0170] Specifically, the raw material gas in the first tank 2541 is supplied to the corresponding area in the processing chamber 210 through the first gas supply pipe 2511, the first distribution part 2221 and the nozzle 223. In addition, the raw material gas in the second tank 2542 is supplied to the corresponding area in the processing chamber 210 through the second gas supply pipe 2512, the second distribution part 2222 and the nozzle 223. In this case, by coordinating the timing of setting the AV2551 and 2552 to the on state, the raw material gas is supplied to the processing chamber 210 from the first tank 2541 and the second tank 2542 at the same time.

[0171] At this time, the first tank 2541 and the second tank 2542 are pressurized at the same pressure, and the gas supply from each is performed simultaneously, so the gas supply to the processing chamber 210 will not be uneven in each corresponding area. Therefore, even if the corresponding area of ​​the first distribution part 2221 and the corresponding area of ​​the second distribution part 2222 are different, the film forming conditions of the substrate S will not be different in each corresponding area. In addition, the so-called "simultaneous" is sufficient as long as it can be achieved that there is no unevenness in each corresponding area, and it does not need to be completely simultaneous.

[0172] (4) Effects of this embodiment

[0173] According to this embodiment, one or more of the following effects are achieved.

[0174] (a) In this embodiment, since the first valve 259 is provided in the pipe 258 between the first tank 2541 and the second tank 2542, the pressure inside the first tank 2541 and the pressure inside the second tank 2542 can be made the same before the raw material gas is supplied to the processing chamber 210. Therefore, for example, even if the conductance of the gas flow path to the first tank 2541 and the second tank 2542 is different, the gas filling amount of each will not be uneven. If the gas filling amount of each becomes uniform, the film forming conditions of the substrate S will not be different in the corresponding area of ​​the first distribution part 2221 and the corresponding area of ​​the second distribution part 2222, and the processing of multiple substrates S can be performed uniformly.

[0175] (b) In this embodiment, when supplying the raw material gas into the processing chamber 210, the pressure inside the first tank 2541 and the pressure inside the second tank 2542 are equalized, and then the gas is supplied from each tank simultaneously. Therefore, uniform processing of the plurality of substrates S can be ensured.

[0176] (5) Modifications, etc.

[0177] As mentioned above, although one embodiment of the present disclosure is specifically described, the present disclosure is not limited to the above-mentioned embodiment, and various modifications can be implemented without departing from the scope of the present disclosure.

[0178] In the above-described embodiment, the case where the first gas supply system (raw material gas supply system) 250 includes one vaporizer 256 is exemplified, but the present disclosure is not limited to this example.

[0179] Fig.11 It is an explanatory diagram showing another example of the first gas supply system.

[0180] In the first gas supply system of the example shown in the figure, vaporizers 2561 and 2562 are provided for each of the first gas supply pipe 2511 and the second gas supply pipe 2512. That is, the same number of vaporizers 2561 and 2562 as the first tank 2541 and the second tank 2542 are provided.

[0181] In such a configuration, if the conductance of the gas flow path from each vaporizer 2561, 2562 to the first tank 2541 and the second tank 2542 is different, the gas filling amount of each will become uneven. However, as shown in the example, as long as the first valve 259 is provided in the pipe 258 between the first tank 2541 and the second tank 2542, the gas filling amount of each can be made uniform, and as a result, the plurality of substrates S can be processed uniformly.

[0182] Thus, in the present disclosure, at least one gasifier is sufficient.

[0183] Furthermore, in the above-described embodiment, a plurality of substrates S are divided into an upper region and a lower region, and gas is supplied from the first tank 2541 and the second tank 2542 to each region, but the present disclosure is not limited to this example.

[0184] Fig.12 1 and 12 are explanatory diagrams showing another example of the first gas supply system, wherein (a) is a diagram showing a schematic overall configuration, and (b) is a diagram showing the periphery of a substrate as viewed from above.

[0185] In the first gas supply system of the example, Fig.12 As shown in (a), each nozzle 223 provided in the first distribution unit 2221 and each nozzle 223 provided in the second distribution unit 2222 are arranged in a manner corresponding to each of the plurality of substrates S. Fig.12 As shown in (b), the nozzles 223 of the first distribution unit 2221 through the second valve 2551 and the nozzles 223 of the second distribution unit 2222 through the second valve 2552 are arranged side by side in the horizontal direction with respect to the substrate S.

[0186] In such a configuration, by making the gas filling amounts of the first tank 2541 and the second tank 2542 uniform, each of the plurality of substrates S can be processed uniformly.

[0187] That is, the method of dividing the regions in the loading direction of the plurality of substrates S is not particularly limited and can be appropriately set.

[0188] Furthermore, in the above-described embodiment, a case is exemplified in which a plurality of substrates S are divided into two regions in the loading direction and the first tank 2541 and the second tank 2542 are provided corresponding to each divided region, but the present disclosure is not limited to this example.

[0189] For example, the plurality of substrates S may be divided into three or more regions in the loading direction. In this case, the distribution unit 222, the tanks 2541 and 2542, and the first gas supply system (raw material gas supply system) 250 are also provided corresponding to the respective divided regions.

[0190] That is, in the present disclosure, the plurality of substrates S only need to be divided into at least two regions in the loading direction, and at least two tanks for storing the raw material gas may be provided to cope with this.

[0191] In addition, for example, the above-mentioned embodiments illustrate the case where a first gas and a second gas are used to form a film on a substrate S in a film forming process performed by a substrate processing device, but the present method is not limited to this. That is, other types of gases can also be used as processing gases for film forming to form other types of thin films. In addition, even in the case of using more than three processing gases, as long as these gases are alternately supplied for film forming, the present method can also be applied. Specifically, the first element can also be various elements such as titanium (Ti), silicon (Si), zirconium (Zr), hafnium (Hf), etc. In addition, the second element can also be, for example, nitrogen (N), oxygen (O), etc. In addition, the first element is preferably Si as mentioned above.

[0192] Here, HCDS gas is used as an example to illustrate the first gas, but it is not limited to this. As long as it contains silicon and has a Si-Si bond, for example, tetrachlorodimethyldisilane ((CH3)2Si2Cl4, abbreviated as: TCDMDS) and dichlorotetramethyldisilane ((CH3)4Si2Cl2, abbreviated as: DCTMDS) can also be used. TCDMDS has a Si-Si bond and further contains a chloro group and an alkylene group. In addition, DCTMDS has a Si-Si bond and further contains a chloro group and an alkylene group.

[0193] In addition, for example, each of the above-mentioned embodiments cites a film forming process as a process performed by a substrate processing device, but the present method is not limited thereto. That is, in addition to the film forming process exemplified in each embodiment, the present method can also be applied to film forming processes other than the thin films exemplified in each embodiment. In addition, a part of the structure of a certain embodiment can be replaced with the structure of another embodiment, and in addition, the structure of another embodiment can be added to the structure of a certain embodiment. In addition, other structures can be added, deleted, or replaced with respect to a part of the structure of each embodiment.

[0194] In addition, for example, the above-mentioned method describes an example of forming a film using a batch-type substrate processing device that processes a plurality of substrates at a time. The present disclosure is not limited to the above-mentioned method, and can also be well applied to, for example, a case where a film is formed using a single-piece substrate processing device that processes one or more substrates at a time. In addition, the above-mentioned method describes an example of forming a film using a substrate processing device having a hot-wall type processing furnace. The present disclosure is not limited to the above-mentioned method, and can also be well applied to a case where a film is formed using a substrate processing device having a cold-wall type processing furnace.

[0195] When these substrate processing apparatuses are used, each process can be performed using the same processing steps and processing conditions as those in the above-mentioned embodiments and modified examples, and the same effects as those in the above-mentioned embodiments and modified examples can be obtained.

[0196] In this modification described above, the same effect as the above-mentioned mode can also be obtained. In addition, the above-mentioned mode and modification can be used in appropriate combination. The processing steps and processing conditions at this moment can be set to the same as the processing steps and processing conditions of the above-mentioned mode or modification, for example.

[0197] Explanation of symbols

[0198] S—substrate; 100—substrate processing device; 210—reaction tube (processing chamber); 250—first gas supply system (raw gas supply system); 250a—gas supply unit; 256—liquid source vaporizer; 258—piping; 259—first valve; 2541—first flash tank; 2542—second flash tank.

Claims

1. A substrate processing device, characterized in that: have: a processing chamber that processes a substrate; at least one gasifier that gasifies a raw material supplied in the form of a liquid to generate a raw material gas; at least two tanks for storing the raw gas taken out from the gasifier; a pipe connecting the at least two tanks; A first valve provided on the pipe; and A gas supply unit supplies the raw material gas from the at least two tanks into the processing chamber.

2. The substrate processing device according to claim 1, characterized in that: The first valve is opened to set the at least two tanks to the same pressure, and then the raw material gas is supplied to the processing chamber.

3. The substrate processing device according to claim 2, characterized in that: The raw material gas is supplied to the processing chamber simultaneously from the at least two tanks.

4. The substrate processing device according to claim 3, characterized in that: The gas supply parts are provided in the same number as the tanks.

5. The substrate processing device according to claim 4, characterized in that: Each of the gas supply parts between the tank and the process chamber is provided with a second valve.

6. The substrate processing device according to claim 5, characterized in that: When the source gas is supplied to the processing chamber, the second valve is opened simultaneously.

7. The substrate processing device according to claim 2 or 3, characterized in that: A substrate holder for mounting a plurality of the substrates is provided.

8. The substrate processing device according to claim 7, characterized in that: dividing the plurality of substrates held on the basic holding member into at least two areas in a loading direction, The gas supply unit supplies the raw material gas to the at least two regions.

9. The substrate processing device according to claim 8, characterized in that: The gas supply units are provided in the same number as the tanks.

10. The substrate processing apparatus according to claim 9, wherein: The vaporizers are provided in the same number as the tanks.

11. The substrate processing apparatus according to claim 7, wherein: The gas supply unit supplies the source gas to each of the plurality of substrates.

12. The substrate processing apparatus according to claim 11, characterized in that: The gas supply units are provided in the same number as the tanks.

13. The substrate processing apparatus according to claim 12, wherein: The vaporizers are provided in the same number as the tanks.

14. A method for manufacturing a semiconductor device, characterized in that: have: A process of carrying a substrate into a processing chamber of a substrate processing apparatus, the substrate processing apparatus comprising: the processing chamber, which processes the substrate; at least one vaporizer, which vaporizes a raw material supplied in a liquid form to generate a raw material gas; at least two tanks, which store the raw material gas taken out from the vaporizer; a pipe connecting the at least two tanks; a first valve, which is provided on the pipe; and a gas supply unit, which supplies the raw material gas from the at least two tanks into the processing chamber; and A step of supplying the source gas to the processing chamber.

15. A program, characterized in that The computer enables the substrate processing device to perform the following steps: The step of carrying a substrate into a processing chamber of a substrate processing apparatus, the substrate processing apparatus comprising: the processing chamber, which processes the substrate; at least one vaporizer, which vaporizes a raw material supplied in a liquid form to generate a raw material gas; at least two tanks, which store the raw material gas taken out from the vaporizer; a pipe connecting the at least two tanks; a first valve, which is provided on the pipe; and a gas supply unit, which supplies the raw material gas from the at least two tanks into the processing chamber; and The step of supplying the raw material gas to the processing chamber.

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