Light emitting device

Abstract

The invention is suitable for the technical field of semiconductors, and provides a light-emitting device. The light-emitting device comprises a light-emitting layer and a temperature control layer. The temperature control layer is arranged on one side or two sides of the luminous layer; the temperature control layer comprises a heat absorption layer and a heat release layer, and the heat absorption layer and the heat release layer are different in phase change temperature. The heat absorption layer and the heat release layer with different phase change temperatures are utilized to form the temperature control layer, so that the temperature control layer can absorb and release heat within a larger temperature range, and the temperature control layer is arranged on one side or two sides of the light emitting layer, so that normal light emitting of the light emitting layer is not influenced, and the heat absorption and release capability of the temperature control layer is good. The temperature of the light-emitting device can be adjusted in a large temperature range, the performance and stability of the light-emitting device are improved, no extra circuit or device needs to be arranged, and the power consumption and cost of the light-emitting device are reduced.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a light emitting device. Background Art

[0002] Organic Light-Emitting Diode (OLED), as a light-emitting device, is a diode that uses organic light-emitting materials to emit light through carrier injection and recombination under the drive of an electric field. The working performance of the OLED screen is greatly affected by temperature. For example, at high or low temperatures, the display effect and service life of the OLED screen will be seriously affected. To solve this problem, in the related art, temperature sensors such as thermistors are usually used to monitor the working temperature of the OLED screen, and then the working voltage of the OLED screen is adjusted through a control circuit based on the working temperature, or a heating device is added to make the OLED screen work within a suitable temperature range to reduce the impact on the working performance of the OLED screen.

[0003] However, the above method usually requires the setting of complex control circuits, precise temperature sensors and heating devices, etc., which increases the power consumption and cost of the OLED screen. Summary of the invention

[0004] In view of this, an embodiment of the present application provides a light-emitting device to solve the technical problem of increasing the power consumption and cost of the light-emitting device by providing additional circuits and devices to reduce the impact of temperature on the working performance of the light-emitting device.

[0005] In a first aspect, an embodiment of the present application provides a light-emitting device, including a light-emitting layer and a temperature control layer;

[0006] The temperature control layer is arranged on one side or both sides of the light-emitting layer;

[0007] The temperature control layer includes a heat absorption layer and a heat release layer, and the heat absorption layer and the heat release layer have different phase change temperatures.

[0008] In a possible implementation of the first aspect, the phase change temperature of the heat release layer is lower than normal temperature, and the phase change temperature of the heat absorption layer is higher than normal temperature; the normal temperature is the temperature at which the light-emitting layer operates stably.

[0009] In a possible implementation manner of the first aspect, the light-emitting layer includes at least two temperature rise regions with different temperature rise rates, and the heat absorption layer includes at least two heat absorption regions with different phase transition temperatures;

[0010] Different heat absorption zones correspond to different temperature rise regions, and the phase change temperature of the heat absorption zone is negatively correlated with the temperature rise rate of the temperature rise region;

[0011] and / or,

[0012] The light-emitting layer comprises at least two temperature drop regions with different temperature drop rates, and the heat release layer comprises at least two heat release regions with different phase change temperatures;

[0013] Different heat release zones correspond to different temperature drop regions, and the phase change temperature of the heat release zone is positively correlated with the temperature drop rate of the temperature drop region.

[0014] In a possible implementation manner of the first aspect, the temperature rise region includes a first temperature rise region and a second temperature rise region; the heat absorption layer includes a first heat absorption zone corresponding to the first temperature rise region and a second heat absorption zone corresponding to the second temperature rise region;

[0015] The temperature drop region includes a first temperature drop region and a second temperature drop region; the heat release layer includes a first heat release region corresponding to the first temperature drop region and a second heat release region corresponding to the second temperature drop region;

[0016] Wherein, the light-emitting layer includes a cathode overlapping region and a light-emitting region; the first temperature-rising region includes a cathode overlapping region, and the second temperature-rising region includes a light-emitting region; the first temperature-dropping region includes a light-emitting region, and the second temperature-dropping region includes a cathode overlapping region;

[0017] or,

[0018] The light-emitting layer includes an anode lead area and a light-emitting area, and the number of the light-emitting area is one;

[0019] The first temperature rising region includes the anode lead region, and the second temperature rising region includes the region of the light emitting layer except the anode lead region; the first temperature dropping region includes the region of the light emitting layer except the anode lead region, and the second temperature dropping region includes the anode lead region;

[0020] or,

[0021] The light-emitting layer includes a light-emitting area, and the number of the light-emitting areas is multiple;

[0022] The first temperature rise region includes the central region of the light-emitting layer, and the central region is located in the middle of the light-emitting layer. The second temperature rise region includes the region of the light-emitting layer except the central region. The first temperature drop region includes the region of the light-emitting layer except the central region, and the second temperature drop region includes the central region of the light-emitting layer.

[0023] In a possible implementation manner of the first aspect, the light-emitting layer includes a third temperature rise region, and the third temperature rise region is a region where a temperature rise rate is greater than a preset temperature rise threshold;

[0024] The heat absorption layer includes a third heat absorption region corresponding to the third temperature rise region;

[0025] No heat absorption region is provided in the light-emitting layer except the third temperature rise region;

[0026] and / or,

[0027] The light-emitting layer includes a third temperature drop region, and the third temperature drop region is a region where the temperature drop rate is greater than a preset temperature drop threshold;

[0028] The heat release layer includes a third heat release area corresponding to the third temperature drop area;

[0029] No heat release zone is provided in the light emitting layer except the third temperature drop zone.

[0030] In a possible implementation manner of the first aspect, the heat absorption layer includes at least one first phase change material layer, and the phase change temperature of the at least one first phase change material layer constitutes the phase change temperature of the heat absorption layer;

[0031] The heat release layer includes at least one second phase change material layer, and a phase change temperature of the at least one second phase change material layer constitutes a phase change temperature of the heat release layer.

[0032] In a possible implementation manner of the first aspect, the heat release layer is arranged on a side of the heat absorption layer away from the light-emitting layer;

[0033] The phase change temperature of each second phase change material layer included in the heat release layer and the phase change temperature of each first phase change material layer included in the heat absorption layer increase gradually toward the light emitting layer.

[0034] In a possible implementation manner of the first aspect, the light-emitting device further includes a substrate disposed on one side of the light-emitting layer;

[0035] The position of the temperature control layer satisfies at least one of the first preset conditions;

[0036] Among them, the first preset condition includes: the temperature control layer is arranged in the substrate, the temperature control layer is arranged on the side of the substrate close to the light-emitting layer, and the temperature control layer is arranged on the side of the substrate away from the light-emitting layer.

[0037] In a possible implementation manner of the first aspect, the light-emitting device further includes an encapsulation layer disposed on one side of the light-emitting layer;

[0038] The position of the temperature control layer satisfies at least one of the second preset conditions;

[0039] Among them, the second preset condition includes: the temperature control layer is arranged in the packaging layer, the temperature control layer is arranged on the side of the packaging layer close to the light-emitting layer, and the temperature control layer is arranged on the side of the packaging layer away from the light-emitting layer.

[0040] In a possible implementation manner of the first aspect, the phase change material layer is formed by combining a phase change material and a support material.

[0041] The light-emitting device provided in the embodiment of the present application utilizes a heat-absorbing layer and a heat-releasing layer with different phase change temperatures to form a temperature-control layer, so that the temperature-control layer can absorb and release heat within a larger temperature range, and the temperature-control layer is arranged on one side or both sides of the light-emitting layer without affecting the normal and effective light emission of the light-emitting layer. Thus, by utilizing the good heat-absorbing and heat-releasing capabilities of the temperature-control layer, the temperature of the light-emitting device can be adjusted within a larger temperature range, thereby improving the performance and stability of the light-emitting device, and no additional circuits or devices are required, thereby reducing the power consumption and cost of the light-emitting device.

[0042] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present specification. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0044] Figure 1 is a schematic diagram of the structure of a light emitting device;

[0045] Figure 2 is a schematic structural diagram of a light-emitting device provided in one embodiment of the present application;

[0046] Figure 3 It is a structural schematic diagram of a temperature control layer provided in one embodiment of the present application;

[0047] Figure 4 It is a schematic diagram of the structure of the heat release layer and the heat absorption layer provided in one embodiment of the present application;

[0048] Figure 5 is a top view of a light-emitting layer provided in one embodiment of the present application;

[0049] FIG6( a ) is a schematic structural diagram of a light emitting device provided in yet another embodiment of the present application;

[0050] FIG6( b ) is a schematic structural diagram of a light emitting device provided in yet another embodiment of the present application;

[0051] FIG6( c ) is a schematic structural diagram of a light emitting device provided in yet another embodiment of the present application;

[0052] FIG6( d ) is a schematic structural diagram of a light emitting device provided in yet another embodiment of the present application;

[0053] FIG6( e ) is a schematic structural diagram of a light emitting device provided in yet another embodiment of the present application;

[0054] FIG6( f ) is a schematic structural diagram of a light emitting device provided in yet another embodiment of the present application;

[0055] FIG6( g) is a schematic structural diagram of a light emitting device provided in yet another embodiment of the present application;

[0056] FIG6( h) is a schematic structural diagram of a light emitting device provided in yet another embodiment of the present application;

[0057] FIG6( i ) is a schematic structural diagram of a light-emitting device provided in yet another embodiment of the present application. DETAILED DESCRIPTION

[0058] The present application is described more clearly below in conjunction with specific embodiments. The following embodiments will help those skilled in the art to further understand the effects of the present application, but are not intended to limit the present application in any form. It should be noted that, for those of ordinary skill in the art, several variations and improvements may be made without departing from the concept of the present application. These all fall within the scope of protection of the present application.

[0059] It should be understood that when used in the present specification and the appended claims, the term "comprising" indicates the presence of described features, wholes, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, components and / or combinations thereof.

[0060] It should also be understood that the term “and / or” used in the specification and appended claims refers to any and all possible combinations of one or more of the associated listed items, and includes these combinations.

[0061] In the description of the present application specification and the appended claims, the terms "first", "second", "third", etc. are only used to distinguish the descriptions and cannot be understood as indicating or implying relative importance.

[0062] References to "one embodiment" or "some embodiments" etc. described in the specification of this application mean that one or more embodiments of the present application include specific features, structures or characteristics described in conjunction with the embodiment. Therefore, the statements "in one embodiment", "in some embodiments", "in some other embodiments", "in some other embodiments", etc. that appear in different places in this specification do not necessarily refer to the same embodiment, but mean "one or more but not all embodiments", unless otherwise specifically emphasized in other ways. The terms "including", "comprising", "having" and their variations all mean "including but not limited to", unless otherwise specifically emphasized in other ways.

[0063] In addition, the “plurality” mentioned in the embodiments of the present application should be interpreted as two or more.

[0064] Figure 1 This is a schematic diagram of the structure of a light-emitting device. Figure 1 , a light-emitting device such as an OLED screen usually includes an encapsulation layer, a cathode, an organic functional layer, an anode and a substrate in sequence, wherein the cathode, the organic functional layer and the anode constitute a light-emitting layer, and the organic functional layer includes a light-emitting area. The light-emitting modes of an OLED screen usually include top emission and bottom emission, wherein the top emission is emitted from the cathode side of the OLED screen, and the bottom emission is emitted from the anode side of the OLED screen.

[0065] The working performance of the OLED screen is greatly affected by temperature. To solve this problem, the working temperature of the OLED screen is usually monitored by a temperature sensor such as a thermistor, and then the working voltage of the OLED screen is adjusted through a control circuit based on the working temperature, or a heating device is added to make the OLED screen work within a suitable temperature range to reduce the impact on the working performance of the OLED screen. However, the above method usually requires the setting of a complex control circuit, a precise temperature sensor and a heating device, etc., which increases the power consumption and cost of the OLED screen.

[0066] Based on the above problems, the study found that phase change materials can absorb or release a large amount of latent heat during the phase change process, and the phase change temperature of some phase change materials will change with different molecular weights. In this way, phase change materials with different phase change temperatures can be used to form a heat absorption layer and a heat release layer, so that the heat absorption layer and the heat release layer with different phase change temperatures form a temperature control layer, so that the temperature control layer can absorb and release heat within a larger temperature range, and the temperature control layer is set on one side or both sides of the light-emitting layer without affecting the normal light emission of the light-emitting layer. Therefore, the good heat absorption and release capacity of the temperature control layer can be used to adjust the temperature of the light-emitting device within a larger temperature range, thereby improving the performance and stability of the light-emitting device, and no additional circuits or devices are required, thereby reducing the power consumption and cost of the light-emitting device.

[0067] Combine the following Figure 1 ,refer to Figure 2 6 to 6 , a light emitting device provided according to an exemplary embodiment of the present application is described.

[0068] Figure 2 Schematic diagram of the structure of a light emitting device provided in one embodiment of the present application. Figure 2 As shown in (a) and (b), the light-emitting device in the embodiment of the present application includes a light-emitting layer and a temperature control layer. The temperature control layer is arranged on one side or both sides of the light-emitting layer. The temperature control layer includes multiple phase change material layers, and the phase change temperature of each phase change material layer is different.

[0069] The light-emitting layer of the light-emitting device includes a light-emitting area and a non-light-emitting area. For the light-emitting area of ​​the light-emitting layer, the temperature control layer can be set on the non-light-emitting side of the light-emitting area, that is, set on the non-light-emitting side of the light-emitting layer, to avoid affecting the normal and effective light emission of the light-emitting layer. As for the non-light-emitting area of ​​the light-emitting layer, since the non-light-emitting area is non-luminous, setting the temperature control layer on both sides of the non-light-emitting area, that is, setting it on the light-emitting side and the non-light-emitting side of the light-emitting layer, will not affect the normal and effective light emission of the light-emitting layer. Therefore, the temperature control layer can be set on one side of the light-emitting layer, or the light-emitting area and the non-light-emitting area can be distinguished and set on both sides of the light-emitting layer, as long as it does not affect the normal and effective light emission of the light-emitting layer.

[0070] For example, in this embodiment, the light-emitting area of ​​the light-emitting layer may include a light-emitting area, and the non-light-emitting area may include a cathode overlapping area. When the light-emitting layer is top-emitting, its light-emitting side is the cathode side, and the temperature control layer can be arranged between the substrate and the light-emitting layer, that is, arranged on the non-light-emitting side of the light-emitting layer. It is also possible that the portion of the temperature control layer corresponding to the light-emitting area is arranged between the substrate and the light-emitting layer, that is, arranged on the non-light-emitting side of the light-emitting layer, and the portion of the temperature control layer corresponding to the cathode overlapping area is arranged between the encapsulation layer and the light-emitting layer, that is, arranged on the light-emitting side of the light-emitting layer, that is, at this time the temperature control layer is arranged on both sides of the light-emitting layer. It can be understood that the process of setting the temperature control layer on one side of the light-emitting layer is simpler and easier to implement from a process point of view.

[0071] Among them, the phase change material can be at least one of paraffin, cross-linked high-density polyethylene, polyols, inorganic salts, polyethylene glycol, polyvinyl alcohol or polyurethane. In addition, the phase change temperature of some phase change materials will change with the difference of molecular weight. For example, the phase change material polyethylene glycol (PEG), the larger the molecular weight, the higher the phase change temperature. For example, the phase change temperature of polyethylene glycol with an average molecular weight of 4000 (denoted as PEG4000) is 61℃~64℃, the phase change temperature of PEG2000 is 35℃~40℃, the phase change temperature of PEG1000 is 20℃~25℃, the phase change temperature of PEG400 is -20℃~-15℃, and the phase change temperature of PEG200 is -60℃~-55℃. Therefore, a temperature control layer can be formed by using phase change material layers with different phase change temperatures, wherein the phase change material layer is composed of phase change materials, and the position order of each phase change material layer in the temperature control layer can be unlimited. Then, within its phase change temperature, the temperature control layer can absorb or release a large amount of latent heat to adjust the temperature of the light-emitting device and prevent the light-emitting device from being affected by the ambient temperature or operating temperature and causing performance degradation.

[0072] The phase transition temperature refers to the critical temperature at which a substance changes between different phases, such as the temperature at which a substance changes between solid and liquid. In this embodiment, the phase transition temperature refers to the temperature at which a substance begins to change between solid and liquid.

[0073] For example Figure 3 A structure of a temperature control layer is shown, referring to Figure 3 The temperature control layer includes four phase change material layers, and the phase change temperatures of each phase change material layer are different and are respectively -25℃~-20℃, -15℃~-10℃, -5℃~0℃ and 50℃~55℃. It can be obtained that the phase change temperature of the temperature control layer is -25℃~55℃. Then, within the phase change temperature included in it, the temperature control layer can absorb or release a large amount of latent heat to adjust the temperature of the light-emitting device. For example, the temperature of the light-emitting device is 50℃ due to the temperature rise during operation, reaching the phase change temperature of a phase change material layer in the temperature control layer. Then, the phase change material layer melts and absorbs a large amount of heat energy, which cools down the light-emitting device or slows down the temperature rise rate of the light-emitting device, effectively improving the performance of the light-emitting device.

[0074] It should be noted that the phase change temperature of the temperature control layer can be determined according to the ambient temperature and the operating temperature of the light-emitting device, and the phase change temperature of each phase change material layer in the temperature control layer can be continuous or discontinuous. It can be understood that when the phase change temperature of each phase change material layer is continuous, the heat absorption or heat release effect of the temperature control layer is better, but more layers of phase change material layers need to be set, so the cost will increase. When the phase change temperature of each phase change material layer is discontinuous, fewer layers of phase change material layers need to be set, so the cost will be reduced.

[0075] In this embodiment, a temperature control layer is formed by using phase change material layers with different phase change temperatures, so that the phase change temperature of the temperature control layer can cover a larger temperature range. Therefore, by utilizing the good heat absorption and release capacity of the temperature control layer, the temperature of the light-emitting device can be adjusted within a larger temperature range, thereby improving the performance and stability of the light-emitting device.

[0076] It should be noted that when the average single working time of the light-emitting device exceeds the preset time threshold, for example, combined with the actual application scenario of the light-emitting device, such as whether the light-emitting device is actually used in a mobile phone or a car display, the average single working time of the light-emitting device is determined. When the above average single working time exceeds the preset time threshold, other methods can be set on the basis of setting a temperature control layer for the light-emitting device to better adjust the temperature of the light-emitting device to ensure the performance and stability of the light-emitting device.

[0077] In some embodiments, the temperature control layer includes a heat absorption layer and a heat release layer, the heat absorption layer and the heat release layer have different phase change temperatures, the phase change temperature of the heat release layer is lower than room temperature, and the phase change temperature of the heat absorption layer is higher than room temperature. Wherein room temperature is the temperature at which the light-emitting layer works stably.

[0078] Optionally, a heat absorbing layer and a heat releasing layer with different phase change temperatures constitute a temperature control layer, so that the temperature control layer can absorb and release heat within a larger temperature range.

[0079] For example, through a large number of related tests, it is found that the performance of the light-emitting device is less affected by temperature within a certain temperature range. At this time, there is no need to use phase change materials to absorb or release heat, and the light-emitting device can also maintain good performance and work stably. The temperature at which the light-emitting layer of the light-emitting device can work stably is defined as normal temperature, and the normal temperature is also a temperature range. That is, within the range of normal temperature, the performance of the light-emitting layer is less affected by temperature and can maintain good stability. Therefore, considering cost savings, etc., the temperature control layer does not need to be provided with a phase change material layer whose phase change temperature corresponds to normal temperature, but only needs to be provided with corresponding phase change material layers for the high temperature range and low temperature range that affect the performance of the light-emitting layer.

[0080] Among them, different light-emitting devices may correspond to different normal temperatures. For a certain type of light-emitting device, its normal temperature can be determined based on a large number of experiments. For example, the normal temperature can be 0° C. to 50° C.

[0081] That is, the temperature control layer can be divided into a heat absorption layer with a phase change temperature greater than normal temperature and a heat release layer with a phase change temperature less than normal temperature. It should be noted that, as mentioned above, the phase change temperature of the heat release layer is actually a temperature range, and the lower limit temperature value of the temperature range corresponding to the heat release layer can be determined according to the ambient temperature. For example, considering the lowest temperature at night, the lower limit temperature value of the temperature range corresponding to the heat release layer is set lower than the lowest temperature at night to ensure that the temperature control layer can still release heat at the lowest temperature at night, so as to heat up the light-emitting device or slow down the cooling speed of the light-emitting device. If the phase change temperature of the heat release layer is -25℃~0℃, then the -25℃ here is determined according to the ambient temperature.

[0082] Similarly, the phase change temperature of the heat absorption layer is actually a temperature range. Since the maximum operating temperature of the light-emitting device is usually higher than the ambient temperature, the upper limit temperature value of the temperature range corresponding to the heat absorption layer can be determined according to the operating temperature of the light-emitting device. For example, considering the maximum operating temperature of the light-emitting device, the upper limit temperature value of the temperature range corresponding to the heat absorption layer is set higher than the maximum operating temperature to ensure that the temperature control layer can still absorb heat at the highest temperature of the light-emitting device, so as to cool the light-emitting device or slow down the temperature rise rate of the light-emitting device. If the phase change temperature of the heat absorption layer is 50℃~55℃, then the 55℃ here is determined according to the maximum operating temperature of the light-emitting device.

[0083] The light-emitting device provided in the embodiment of the present application utilizes a heat-absorbing layer and a heat-releasing layer with different phase change temperatures to form a temperature-control layer, so that the temperature-control layer can absorb and release heat within a larger temperature range, and the temperature-control layer is arranged on one side or both sides of the light-emitting layer without affecting the normal and effective light emission of the light-emitting layer. Thus, by utilizing the good heat-absorbing and heat-releasing capabilities of the temperature-control layer, the temperature of the light-emitting device can be adjusted within a larger temperature range, thereby improving the performance and stability of the light-emitting device, and no additional circuits or devices are required, thereby reducing the power consumption and cost of the light-emitting device.

[0084] In some embodiments, the heat absorption layer includes at least one first phase change material layer, and the phase change temperature of the at least one first phase change material layer constitutes the phase change temperature of the heat absorption layer. The heat release layer includes at least one second phase change material layer, and the phase change temperature of the at least one second phase change material layer constitutes the phase change temperature of the heat release layer. Exemplarily, in this embodiment, the heat absorption layer includes at least one first phase change material layer, and the heat release layer includes at least one second phase change material layer. The phase change temperatures of all first phase change material layers constitute the phase change temperature of the heat absorption layer, and the phase change temperatures of each first phase change material layer can be continuous or intermittent. For example, if the phase change temperature of the heat absorption layer is determined to be 50°C to 55°C, a first phase change material layer can be set, and the phase change temperature of the first phase change material layer is 50°C to 55°C. For example, if the phase change temperature of the heat absorption layer is determined to be 50°C to 65°C, three first phase change material layers can be set, and the phase change temperatures of each phase change material layer are 50°C to 55°C, 55°C to 60°C, and 60°C to 65°C, respectively. Alternatively, two first phase change material layers can be set, and the phase change temperatures of each phase change material layer are 50°C to 55°C and 60°C to 65°C, respectively.

[0085] Optionally, the phase change temperatures of all the second phase change material layers constitute the phase change temperature of the heat release layer. The configuration of each second phase change material layer may refer to the configuration of the first phase change material layer, which will not be described in detail here.

[0086] It should be noted that, in this embodiment, the first phase change material layer is solid before reaching its phase change temperature. When reaching its phase change temperature, the phase change material in the first phase change material layer changes from solid to liquid, absorbing heat during the process, that is, the phase change temperature of the first phase change material layer is the melting point. The second phase change material layer is liquid before dropping to its phase change temperature. When dropping to its phase change temperature, the phase change material in the second phase change material layer changes from liquid to solid, releasing heat during the process, that is, the phase change temperature of the second phase change material layer is the solidification point.

[0087] In some embodiments, the heat release layer is disposed on a side of the heat absorption layer away from the light emitting layer, and the phase change temperatures of the second phase change material layers included in the heat release layer and the first phase change material layers included in the heat absorption layer increase toward the light emitting layer.

[0088] In this embodiment, the exothermic layer and the heat absorption layer can be stacked, and the exothermic layer is arranged on the side of the heat absorption layer away from the light-emitting layer, that is, the exothermic layer is located closer to the environment and away from the light-emitting layer, while the heat absorption layer is located closer to the light-emitting layer. This is because when the light-emitting layer is working, the light-emitting layer itself will heat up instead of cooling down, and the low temperature of the light-emitting layer is caused by the influence of the external environment. The exothermic layer releases heat when the temperature of the light-emitting layer is low, and provides heat to the light-emitting layer to increase the temperature of the light-emitting layer or slow down the temperature drop rate of the light-emitting layer. Therefore, the exothermic layer needs to sense the temperature of the external environment to better release heat. On the contrary, the heat absorption layer absorbs heat when the temperature of the light-emitting layer is high, absorbs the heat of the light-emitting layer to reduce the temperature of the light-emitting layer or slow down the temperature rise rate of the light-emitting layer. Therefore, the heat absorption layer needs to sense the temperature of the light-emitting layer to better absorb heat.

[0089] In this way, the heat-releasing layer is located closer to the environment, while the heat-absorbing layer is located closer to the light-emitting layer, so that the heat-releasing layer can better sense the ambient temperature and the heat-absorbing layer can better sense the temperature of the light-emitting layer, thereby effectively regulating the temperature of the light-emitting device and improving the performance and stability of the light-emitting device.

[0090] From the above, we can see that Figure 4 , the heat release layer may include multiple second phase change material layers, and the heat absorption layer may include multiple first phase change material layers, wherein the multiple second phase change material layers are arranged on the side of the multiple first phase change material layers away from the light emitting layer, that is, along the direction from the external environment to the light emitting layer, the second phase change material layers and the first phase change material layers are arranged in sequence, and along the direction from the external environment to the light emitting layer, the phase change temperature of each second phase change material layer increases, and the phase change temperature of each first phase change material layer increases. For example, along the direction from the external environment to the light emitting layer, the phase change temperature of each second phase change material layer is -25℃~-20℃, -15℃~-10℃ and -5℃~0℃, respectively, and the phase change temperature of each first phase change material layer is 50℃~55℃ and 60℃~65℃, respectively.

[0091] By setting the phase change temperature of each second phase change material layer and the phase change temperature of each first phase change material layer to increase toward the light-emitting layer, the heat-releasing layer can better sense the external environment temperature, so that it can better release heat when the temperature of the light-emitting layer is low, and provide heat for the light-emitting layer. At the same time, the heat-absorbing layer can better sense the temperature of the light-emitting layer, so that it can better absorb heat when the temperature of the light-emitting layer is high, and absorb the heat of the light-emitting layer. In this way, the temperature of the light-emitting device can be effectively adjusted, and the performance and stability of the light-emitting device can be improved.

[0092] As can be seen from the foregoing, the light-emitting layer includes a cathode, an organic functional layer and an anode, and the organic functional layer includes a light-emitting area. In actual work, the temperature rise rate and heat generation, as well as the temperature drop rate and heat dissipation of each area of ​​the light-emitting layer may be different, resulting in uneven overall temperature of the light-emitting device, affecting the performance and service life of the light-emitting device. In order to solve this problem and ensure the temperature uniformity of the light-emitting device, this embodiment can set temperature control zones with different phase change temperatures for areas with different temperature rise rates or temperature drop rates.

[0093] In some embodiments, the light-emitting layer includes at least two temperature-rising regions with different temperature-rising speeds, the heat-absorbing layer includes at least two heat-absorbing regions with different phase-change temperatures, different heat-absorbing regions correspond to different temperature-rising regions, and the phase-change temperature of the heat-absorbing region is negatively correlated with the temperature-rising speed of the temperature-rising region. And / or, the light-emitting layer includes at least two temperature-reducing regions with different temperature-reducing speeds, the heat-releasing layer includes at least two heat-releasing regions with different phase-change temperatures, different heat-releasing regions correspond to different temperature-reducing regions, and the phase-change temperature of the heat-releasing region is positively correlated with the temperature-reducing speed of the temperature-reducing region.

[0094] In this embodiment, due to its own heating properties, the light-emitting layer may include at least two temperature rise regions with different temperature rise rates. For example, a certain temperature rise region may reach a certain high temperature value earlier than other regions, which may lead to uneven overall temperature of the light-emitting device. In order to ensure that the temperature rise rate of the temperature rise region is the same or similar to that of other regions, heat absorption regions with different phase change temperatures may be set for the temperature rise region and other regions, respectively. The phase change temperature of the heat absorption region is negatively correlated with the temperature rise rate of the temperature rise region.

[0095] Here, the phase change temperature of the heat absorption zone is negatively correlated with the temperature rise rate of the temperature rise zone, so as to ensure that the temperature rise zone with a high temperature rise rate has a low phase change temperature of the corresponding heat absorption zone. In this way, when the temperature rise zone first reaches a lower high temperature value, its corresponding heat absorption zone begins to absorb heat, thereby cooling the temperature rise zone or slowing down its temperature rise rate, so that it can maintain the same or similar temperature rise rate as other regions.

[0096] Similarly, due to the self-heating property of the light-emitting layer in this embodiment, when the working environment of the light-emitting device is cooled down, it may include at least two temperature drop areas with different temperature drop rates. For example, a certain temperature drop area will drop to a certain low temperature value earlier than other areas, which will cause the overall temperature of the light-emitting device to be uneven. In order to ensure that the temperature drop rate of the temperature drop area is the same or similar to that of other areas, heat release areas with different phase change temperatures can be set for the temperature drop area and other areas respectively. And the phase change temperature of the heat release area is positively correlated with the temperature drop rate of the temperature drop area.

[0097] Here, the phase change temperature of the heat release zone is positively correlated with the temperature drop rate of the temperature drop zone, so as to ensure that the temperature drop zone with a high temperature drop rate has a high phase change temperature of the corresponding heat release zone. In this way, when the temperature drop zone first drops to a higher low temperature value, its corresponding heat release zone begins to release heat, thereby causing the temperature of the temperature drop zone to rise or slow down its cooling rate, so that it can maintain the same or similar temperature drop rate as other areas.

[0098] In this embodiment, heat absorbing zones with different phase change temperatures are respectively provided for the temperature rise regions with different temperature rise rates, and the phase change temperature of the heat absorbing zone is negatively correlated with the temperature rise rate of the temperature rise region. Thus, when the temperature rise region with a high temperature rise rate first reaches a relatively low high temperature value, its corresponding heat absorbing zone begins to absorb heat, thereby cooling the temperature rise region with a high temperature rise rate or slowing down its temperature rise rate, so that it can maintain the same or similar temperature rise rate as the temperature rise region with a low temperature rise rate, thereby improving the temperature uniformity of the light-emitting device.

[0099] Similarly, for temperature drop regions with different temperature drop rates, heat release regions with different phase change temperatures are respectively set, and the phase change temperature of the heat release region is positively correlated with the temperature drop rate of the temperature drop region. Thus, the temperature drop region with a high temperature drop rate can maintain the same or similar temperature drop rate as the temperature drop region with a low temperature drop rate, thereby improving the temperature uniformity of the light-emitting device.

[0100] This embodiment takes into account the self-heating properties of the light-emitting layer, and sets heat absorption zones with different phase change temperatures in the heat absorption layer and heat release zones with different phase change temperatures in the heat release layer, thereby ensuring the temperature uniformity of the light-emitting device under different conditions.

[0101] In the following embodiments, a light-emitting layer including two temperature-rising regions with different temperature-rising rates and two temperature-dropping regions with different temperature-dropping rates is described in detail.

[0102] Exemplarily, the temperature rising region includes a first temperature rising region and a second temperature rising region, the heat absorbing layer includes a first heat absorbing region corresponding to the first temperature rising region and a second heat absorbing region corresponding to the second temperature rising region. The temperature dropping region includes a first temperature dropping region and a second temperature dropping region, and the heat releasing layer includes a first heat releasing region corresponding to the first temperature dropping region and a second heat releasing region corresponding to the second temperature dropping region.

[0103] The temperature rise rate of the first temperature rise region is greater than the temperature rise rate of the second temperature rise region, the phase change temperature of the first heat absorption region is less than the phase change temperature of the second heat absorption region, the temperature drop rate of the first temperature drop region is greater than the temperature drop rate of the second temperature drop region, and the phase change temperature of the first heat release region is greater than the phase change temperature of the second heat release region.

[0104] In this embodiment, when the first temperature rise region with a large temperature rise rate first reaches the phase change temperature of the first heat absorption zone, the first heat absorption zone first absorbs the heat of the first temperature rise region, so as to cool down the first temperature rise region or slow down the temperature rise rate of the first temperature rise region, so that the first temperature rise region can maintain the same or similar temperature rise rate as the second temperature rise region, thereby ensuring the temperature uniformity of the light-emitting device.

[0105] When the temperature of the second temperature rise region reaches the phase change temperature of the second heat absorption region, the second heat absorption region can absorb the heat of the second temperature rise region to adjust the temperature of the light-emitting device, while ensuring that the temperature rise rates of the first temperature rise region and the second temperature rise region are the same or similar.

[0106] That is, since the temperature rise rate of the first temperature rise region is fast, it will reach a certain high temperature first, so the phase change temperature of the first heat absorption region is set to be lower than the phase change temperature of the second heat absorption region, so that the first heat absorption region can absorb a large amount of heat from the first temperature rise region as soon as possible to ensure that the temperature rise rates of the first temperature rise region and the second temperature rise region are the same or similar. When the second temperature rise region also reaches a certain high temperature, the second heat absorption region is used to absorb a large amount of heat from the second temperature rise region to ensure that the temperature rise rates of the first temperature rise region and the second temperature rise region are the same or similar, thereby ensuring the temperature uniformity of the light-emitting device.

[0107] Similarly, since the temperature drop rate of the first temperature drop area is fast, it will drop to a certain low temperature first. Therefore, the phase change temperature of the first heat release area is set to be greater than the phase change temperature of the second heat release area, so that the first heat release area can release a large amount of heat to the first temperature drop area as soon as possible to ensure that the temperature drop rates of the first temperature drop area and the second temperature drop area are the same or similar. When the second temperature drop area also drops to a certain low temperature, the second heat release area is used to release a large amount of heat to the second temperature drop area to ensure that the temperature drop rates of the first temperature drop area and the second temperature drop area are the same or similar, so as to further ensure the temperature uniformity of the light-emitting device.

[0108] Figure 5 A top view of the light-emitting layer is shown, referring to Figure 5 The light-emitting layer includes a light-emitting area, a cathode overlapping area and an anode lead area.

[0109] For example, refer to Figure 5, the light-emitting layer includes a cathode overlap region and a light-emitting region, and for the cathode overlap region, all light-emitting regions share a common cathode, resulting in a large current flowing through the cathode overlap region and a fast temperature rise rate. Therefore, the first temperature rise region may include the cathode overlap region, and the second temperature rise region may include the light-emitting region, or may include a region other than the first temperature rise region. In this way, if the phase change temperatures of each phase change material layer included in the first heat absorption region are -25°C to -20°C, -15°C to -10°C, and 50°C to 55°C, respectively, the phase change temperatures of each phase change material layer included in the second heat absorption region are -25°C to -20°C, -15°C to -10°C, and 60°C to 65°C, respectively. When the temperature of the cathode overlap region with a fast temperature rise rate first reaches 50°C, the corresponding first heat absorption region first absorbs the heat of the cathode overlap region, cools the cathode overlap region or slows down the temperature rise rate of the cathode overlap region, thereby making the temperature rise rates of the cathode overlap region and the light-emitting region the same or similar, thereby improving the temperature uniformity of the light-emitting device.

[0110] Similarly, the temperature drop rate of the cathode overlap region is slow, while the temperature drop rate of the light emitting region is fast. Therefore, the first temperature drop region may include the light emitting region, or may include a region other than the second temperature drop region, and the second temperature drop region may include the cathode overlap region.

[0111] Optionally, the light-emitting layer includes an anode lead region and a light-emitting region, and the number of the light-emitting region is one (usually one light-emitting region, the area of ​​which is relatively large (such as greater than 1 cm 2 )), the anode lead region has the problem of high heat generation and fast temperature rise, which will lead to uneven brightness of the light-emitting device. Therefore, the first temperature rise region may include the anode lead region, and the second temperature rise region may include the region of the light-emitting layer other than the anode lead region. Similarly, the temperature drop rate of the anode lead region is slow, so the first temperature drop region may include the region of the light-emitting layer other than the anode lead region, and the second temperature drop region may include the anode lead region.

[0112] Exemplarily, the light-emitting layer includes a light-emitting area, and the number of light-emitting areas is multiple, and when the light-emitting device is at high brightness, such as when the average brightness of the light-emitting device is greater than the brightness threshold, the middle position of the light-emitting layer, that is, the central area, is prone to high heat generation and fast temperature rise. Therefore, the first temperature rise area may include the central area of ​​the light-emitting layer, and the central area is located in the middle of the light-emitting layer, and the second temperature rise area may include the area of ​​the light-emitting layer other than the central area. Similarly, the temperature drop rate of the central area is slow, so the first temperature drop area may include the area of ​​the light-emitting layer other than the central area, and the second temperature drop area may include the central area of ​​the light-emitting layer.

[0113] In this embodiment, by providing a first heat absorption zone and a second heat absorption zone, and the phase change temperature of the first heat absorption zone is lower than the phase change temperature of the second heat absorption zone, the temperature of the region with a large local temperature rise rate in the light-emitting layer can be reduced, and the temperature rise rates of the first temperature rise zone and the second temperature rise zone are the same or similar, thereby ensuring the temperature uniformity of the light-emitting device, improving the thermal uniformity, and ensuring the performance and stability of the light-emitting device. Similarly, by providing a first heat release zone and a second heat release zone, and the phase change temperature of the first heat release zone is higher than the phase change temperature of the second heat release zone, the temperature of the region with a large local temperature drop rate in the light-emitting layer can be increased, and the temperature drop rates of the first temperature drop zone and the second temperature drop zone are the same or similar, thereby ensuring the temperature uniformity of the light-emitting device, improving the thermal uniformity, and ensuring the performance and stability of the light-emitting device.

[0114] In some embodiments, the light-emitting layer includes a third temperature rise region, the third temperature rise region is a region where the temperature rise rate is greater than a preset temperature rise threshold, the heat absorption layer includes a third heat absorption zone corresponding to the third temperature rise region, and no heat absorption zone is set in the light-emitting layer except the third temperature rise region, and / or the light-emitting layer includes a third temperature drop region, the third temperature drop region is a region where the temperature drop rate is greater than a preset temperature drop threshold, the heat release layer includes a third heat release zone corresponding to the third temperature drop region, and no heat release zone is set in the light-emitting layer except the third temperature drop region.

[0115] In this embodiment, for cost saving considerations, a heat absorption zone may be set only for the area whose temperature rise rate is greater than a preset temperature rise threshold. In this way, since the temperature rise rate of the third temperature rise area is fast, when its temperature reaches the phase change temperature of the third heat absorption area, the temperature of the area other than the third temperature rise area will be relatively low. At this time, since the position of the third heat absorption area is set to correspond to the third temperature rise area, the third heat absorption area absorbs the heat of the third temperature rise area, thereby cooling the third temperature rise area or slowing down the temperature rise rate of the third temperature rise area, so that it can maintain the same or similar temperature rise rate as the area other than the third temperature rise area, thereby ensuring the temperature uniformity of the light-emitting device and reducing the impact on the performance of the light-emitting device.

[0116] Similarly, a heat release zone can be set only for the area whose temperature drop rate is greater than the preset temperature drop threshold. In this way, since the temperature drop rate of the third temperature drop area is fast, when its temperature drops to the phase change temperature of the third temperature drop area, the temperature of the area other than the third temperature drop area will be relatively high. At this time, since the position of the third heat release area is set to correspond to the third temperature drop area, the third heat release area releases heat in the third temperature drop area, thereby increasing the temperature of the third temperature drop area or slowing down the temperature drop rate of the third temperature drop area, so that it can maintain the same or similar temperature drop rate as the area other than the third temperature drop area, thereby ensuring the temperature uniformity of the light-emitting device and reducing the impact on the performance of the light-emitting device.

[0117] As described in the above embodiments, the temperature control layer can be arranged on one side or both sides of the light-emitting layer. Compared with the temperature control layer being arranged on both sides of the light-emitting layer, the temperature control layer being arranged on one side of the light-emitting layer has a simpler process and is easier to implement from a process perspective. The specific case of the temperature control layer being arranged on one side of the light-emitting layer is described in the following embodiments.

[0118] Figure 6(a) to Figure 6(i) is a structural schematic diagram of a light emitting device provided by another embodiment of the present application. Since the temperature control layer can be arranged at many positions in the light emitting device, Figure 6(a) to Figure 6(i) Only some of the positions where the temperature control layer can be set are shown. Those skilled in the art can obtain other positions where the temperature control layer can be set in the light-emitting device based on FIG. 6 and the relevant text description of the present application.

[0119] In some embodiments, it can be seen from the foregoing that the light-emitting device further includes a substrate disposed on one side of the light-emitting layer. In one case, the light-emitting side of the light-emitting layer is away from the substrate. At this time, the position of the temperature control layer satisfies at least one of the first preset conditions, and the first preset condition includes: the temperature control layer is disposed in the substrate, the temperature control layer is disposed on the side of the substrate close to the light-emitting layer, and the temperature control layer is disposed on the side of the substrate away from the light-emitting layer.

[0120] Exemplarily, when the light-emitting side of the light-emitting layer is far away from the substrate, that is, when the light-emitting layer is top-emitting, when the temperature control layer is arranged on one side of the light-emitting layer, the position of the temperature control layer is related to the substrate, and at least one of the first preset conditions can be satisfied. Among them, referring to Figure 6(a), the temperature control layer is arranged in the substrate, which can be understood as directly using the temperature control layer as the substrate, or referring to Figure 6(b), the temperature control layer and other materials together constitute the substrate. Referring to Figure 6(c), the temperature control layer is arranged on the side of the substrate close to the light-emitting layer, which means that the temperature control layer is arranged between the substrate and the light-emitting layer. Here, when the temperature control layer is arranged on the side of the substrate close to the light-emitting layer, the phase change material layer constituting the temperature control layer needs to include conductive materials such as graphene.

[0121] In some embodiments, it can be seen from the above that the light-emitting device further includes an encapsulation layer disposed on one side of the light-emitting layer. In one case, the light-emitting side of the light-emitting layer is away from the encapsulation layer. At this time, the position of the temperature control layer satisfies at least one of the second preset conditions, and the second preset conditions include: the temperature control layer is disposed in the encapsulation layer, the temperature control layer is disposed on the side of the encapsulation layer close to the light-emitting layer, and the temperature control layer is disposed on the side of the encapsulation layer away from the light-emitting layer.

[0122] Optionally, when the light-emitting side of the light-emitting layer is far away from the encapsulation layer, that is, when the light-emitting layer is bottom-emitting, and the temperature control layer is arranged on one side of the light-emitting layer, the position of the temperature control layer is related to the encapsulation layer, and at least one of the second preset conditions can be met. Among them, the encapsulation layer may include multiple layers, such as a water-blocking layer, a buffer layer, and a desiccant layer, etc. The temperature control layer is arranged in the encapsulation layer, which can be understood as laminating the temperature control layer to any layer in the encapsulation layer, and the temperature control layer is arranged on the side of the encapsulation layer close to the light-emitting layer, which means that the temperature control layer is arranged between the encapsulation layer and the light-emitting layer.

[0123] It should be noted that, in this embodiment, when the light-emitting side of the light-emitting layer is far away from the substrate, the position of the temperature control layer satisfies at least one of the first preset conditions, that is, the temperature control layer can be set in the substrate or directly used as the substrate, set on the side of the substrate close to the light-emitting layer, or set on the side of the substrate away from the light-emitting layer; there can also be multiple temperature control layers, each temperature control layer satisfies at least two of the first preset conditions, that is, each temperature control layer is set separately. For example, referring to Figure 6(g), there can be two temperature control layers, which are respectively set on both sides of the substrate. In another case, referring to Figure 6(h), the two temperature control layers can correspond to different areas of the light-emitting layer.

[0124] On the other hand, when the light-emitting side of the light-emitting layer in this embodiment is far away from the encapsulation layer, the position of the temperature control layer satisfies at least one of the second preset conditions, that is, the temperature control layer is arranged in the encapsulation layer, arranged on the side of the encapsulation layer close to the light-emitting layer, or the temperature control layer is arranged on the side of the encapsulation layer away from the light-emitting layer; there can also be multiple temperature control layers, each temperature control layer satisfies at least two of the second preset conditions, that is, the temperature control layers are arranged separately. For example, referring to Figure 6 (i), there can be two temperature control layers, which are respectively arranged on both sides of the encapsulation layer. In another case, the two temperature control layers can correspond to different areas of the light-emitting layer (not shown in the figure).

[0125] Of course, considering the complexity of the processing technology, the case where the temperature control layer meets one of the first preset conditions and the case where the temperature control layer meets one of the second preset conditions have lower processing technology complexity and are easier to implement.

[0126] As described in the above embodiments, the phase change material layer is composed of a phase change material. In order to prevent leakage of the phase change material during the phase change process, the phase change material may be combined with a supporting material.

[0127] In some embodiments, the phase change material layer is composed of a combination of a phase change material and a support material.

[0128] Optionally, the support material is also called a carrier material, and the phase change material and the support material can be combined by physical mixing, microencapsulation or chemical polymerization to obtain a composite shaped phase change material with stable shape as the phase change material layer. The composite shaped phase change material can confine the melted phase change material around the molecules to prevent the phase change material from leaking during the phase change process. That is, the first phase change material layer can be composed of a combination of a phase change material and a support material, and the second phase change material layer can be composed of a combination of a phase change material and a support material.

[0129] The phase change material may be polyethylene glycol or other materials, and the supporting material may include polyacrylamide and graphene.

[0130] The embodiments described above are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. Such modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention, and should all be included in the protection scope of the present invention.

Claims

1. A light emitting device, characterized in that: Including a light-emitting layer and a temperature control layer; The temperature control layer is arranged on one side or both sides of the light-emitting layer; The temperature control layer includes a heat absorption layer and a heat release layer, and the heat absorption layer and the heat release layer have different phase change temperatures.

2. The light emitting device according to claim 1, characterized in that: The phase change temperature of the exothermic layer is lower than the normal temperature, and the phase change temperature of the heat absorption layer is higher than the normal temperature; the normal temperature is the temperature at which the light-emitting layer operates stably.

3. The light emitting device according to claim 2, characterized in that: The light-emitting layer includes at least two temperature-rising regions with different temperature-rising speeds, and the heat-absorbing layer includes at least two heat-absorbing regions with different phase-change temperatures; Different heat absorption zones correspond to different temperature rise regions, and the phase change temperature of the heat absorption zone is negatively correlated with the temperature rise rate of the temperature rise region; and / or, The light-emitting layer comprises at least two temperature drop regions with different temperature drop rates, and the heat release layer comprises at least two heat release regions with different phase change temperatures; Different heat release zones correspond to different temperature drop regions, and the phase change temperature of the heat release zone is positively correlated with the temperature drop rate of the temperature drop region.

4. The light emitting device according to claim 3, characterized in that: The temperature rise region includes a first temperature rise region and a second temperature rise region; the heat absorption layer includes a first heat absorption region corresponding to the first temperature rise region and a second heat absorption region corresponding to the second temperature rise region; The temperature drop region includes a first temperature drop region and a second temperature drop region; the heat release layer includes a first heat release region corresponding to the first temperature drop region and a second heat release region corresponding to the second temperature drop region; Wherein, the light-emitting layer includes a cathode overlapping region and a light-emitting region; the first temperature-rising region includes a cathode overlapping region, and the second temperature-rising region includes a light-emitting region; the first temperature-dropping region includes a light-emitting region, and the second temperature-dropping region includes a cathode overlapping region; or, The light-emitting layer includes an anode lead area and a light-emitting area, and the number of the light-emitting area is one; The first temperature rising region includes the anode lead region, and the second temperature rising region includes the region of the light emitting layer except the anode lead region; the first temperature dropping region includes the region of the light emitting layer except the anode lead region, and the second temperature dropping region includes the anode lead region; or, The light-emitting layer includes a light-emitting area, and the number of the light-emitting areas is multiple; The first temperature rise region includes the central region of the light-emitting layer, and the central region is located in the middle of the light-emitting layer. The second temperature rise region includes the region of the light-emitting layer except the central region. The first temperature drop region includes the region of the light-emitting layer except the central region, and the second temperature drop region includes the central region of the light-emitting layer.

5. The light emitting device according to claim 2, characterized in that: The light-emitting layer includes a third temperature rise region, and the third temperature rise region is a region where the temperature rise rate is greater than a preset temperature rise threshold; The heat absorption layer includes a third heat absorption region corresponding to the third temperature rise region; No heat absorption region is provided in the light-emitting layer except the third temperature rise region; and / or, The light-emitting layer includes a third temperature drop region, and the third temperature drop region is a region where the temperature drop rate is greater than a preset temperature drop threshold; The heat release layer includes a third heat release area corresponding to the third temperature drop area; No heat release zone is provided in the light emitting layer except the third temperature drop zone.

6. The light emitting device according to claim 2, characterized in that: The heat absorption layer comprises at least one first phase change material layer, and the phase change temperature of the at least one first phase change material layer constitutes the phase change temperature of the heat absorption layer; The heat release layer includes at least one second phase change material layer, and a phase change temperature of the at least one second phase change material layer constitutes a phase change temperature of the heat release layer.

7. The light emitting device according to claim 6, characterized in that: The heat release layer is arranged on a side of the heat absorption layer away from the light emitting layer; The phase change temperature of each second phase change material layer included in the heat release layer and the phase change temperature of each first phase change material layer included in the heat absorption layer increase gradually toward the light emitting layer.

8. The light emitting device according to claim 1, characterized in that: The light-emitting device further comprises a substrate disposed on one side of the light-emitting layer; The position of the temperature control layer satisfies at least one of the first preset conditions; Among them, the first preset condition includes: the temperature control layer is arranged in the substrate, the temperature control layer is arranged on the side of the substrate close to the light-emitting layer, and the temperature control layer is arranged on the side of the substrate away from the light-emitting layer.

9. The light emitting device according to claim 1 or 8, characterized in that: The light-emitting device further comprises an encapsulation layer disposed on one side of the light-emitting layer; The position of the temperature control layer satisfies at least one of the second preset conditions; Among them, the second preset condition includes: the temperature control layer is arranged in the packaging layer, the temperature control layer is arranged on the side of the packaging layer close to the light-emitting layer, and the temperature control layer is arranged on the side of the packaging layer away from the light-emitting layer.

10. The light emitting device according to claim 6 or 7, characterized in that: The phase change material layer is composed of a phase change material and a supporting material.

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