Thin film interference filter color coating

Abstract

The invention relates to a thin film interference filter color coating. An electronic device may be provided with a conductive structure, such as a conductive housing structure. A visible light reflective coating may be formed on the conductive structure. The coating may have an adhesive and transition layer, and a thin film interference filter on the adhesive and transition layer. The thin film interference filter may be a four-layer interference filter directly stacked on the adhesion and transition layers and having an uppermost SiCrN layer, a lowermost SiN layer, and interleaved SiH and SiN layers. If desired, an opaque colored layer, such as a Cr layer, may be disposed between the interference filter and the adhesion and transition layer. The coating may exhibit a dark red or orange color that has a relatively uniform visual response even when the underlying conductive structure has a three-dimensional shape.

Description

[0001] This application claims priority to U.S. Patent Application No. 18 / 505,906, filed on November 9, 2023, which claims the benefit of U.S. Provisional Patent Application No. 63 / 518,306, filed on August 8, 2023, which applications are hereby incorporated by reference in their entirety. Technical Field

[0002] The present disclosure relates generally to coatings for electronic device structures, and more particularly, to visible light reflective coatings for conductive electronic device structures. Background Art

[0003] Electronic devices such as cell phones, computers, watches and other devices contain conductive structures, such as conductive housing structures, that are provided with a coating that reflects light of a particular wavelength so that the conductive components appear to have a desired visible color.

[0004] Providing coatings such as those with a desired color brightness can be challenging. Furthermore, if care is not taken, the coatings can exhibit unsatisfactory optical properties under different operating environments and conductive structure geometries. Summary of the invention

[0005] An electronic device may include a conductive structure such as a conductive housing structure. A visible light reflective coating may be formed on the conductive structure. The coating may have an adhesion and transition layer, and a multilayer thin film interference filter located on the adhesion and transition layer. If necessary, an opaque colored layer such as a Cr layer or a TiN layer may be interposed between the thin film interference filter and the adhesion and transition layer.

[0006] The multilayer thin film interference filter can also present a deep red, orange or yellow color even when the underlying conductive structure has a three-dimensional shape. The number, composition and thickness of the layers of the multilayer thin film interference filter and the optional opaque coloring layer can be selected to configure the coating to present a color. In a first example, the multilayer thin film interference filter can be a four-layer interference filter, which includes an uppermost SiCrN layer and interleaved SiH and SiN layers stacked directly on the adhesion and transition layers without an opaque coloring layer. In a second example, the coating can include an opaque coloring layer, such as a Cr layer sandwiched between the four-layer interference filter and the adhesion and transition layers. In a third example, the multilayer thin film interference filter can be a four-layer or six-layer interference filter with alternating SiC and SiCrCN layers.

[0007] One aspect of the present disclosure provides a device. The device may include a conductive substrate. The device may include a coating located on the conductive substrate and having a color. The coating may include an adhesion and transition layer. The coating may include a thin film interference filter located on the adhesion and transition layer, wherein the thin film interference filter has a lowermost layer contacting the adhesion and transition layer and an uppermost layer opposite to the lowermost layer, the uppermost layer includes SiCrN, and the lowermost layer includes SiN.

[0008] One aspect of the present disclosure provides a device. The device may include a conductive substrate. The device may include a coating located on the conductive substrate and having a color. The coating may include an adhesion and transition layer. The coating may include an opaque layer located on the adhesion and transition layer, the opaque layer comprising chromium. The coating may include a thin film interference filter located on the opaque layer, the thin film interference filter having an uppermost layer comprising SiCrN and a lowermost layer comprising SiN.

[0009] One aspect of the present disclosure provides a device. The device may include a conductive substrate. The device may include a coating located on the conductive substrate and having a color. The coating may include an adhesion and transition layer. The coating may include a thin film interference filter located on the adhesion and transition layer, wherein the thin film interference filter has a first SiC layer, a first SiCrCN layer on the first SiC layer, and a second SiC layer on the first SiCrCN layer, the first SiC layer forming the lowermost layer of the thin film interference filter. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 is a perspective view of an illustrative electronic device of the type that may be provided with conductive structures and a visible light reflective coating in accordance with some embodiments.

[0011] Figure 2 is a cross-sectional side view of an illustrative electronic device having conductive structures that may be provided with a visible light reflective coating according to some embodiments.

[0012] Figure 3 is a cross-sectional side view of an illustrative visible light reflective coating having three to six layers of interference films according to some embodiments.

[0013] Figure 4 is a cross-sectional side view of an illustrative visible light reflective coating having a five-layer interference film with an uppermost SiCrN layer and alternating SiH and SiN layers, according to some embodiments.

[0014] Figure 5 is a cross-sectional side view of an illustrative visible light reflective coating having a Cr opaque tinted layer and a five-layer interference film having an uppermost SiCrN layer and alternating SiH and SiN layers, according to some embodiments.

[0015] Figure 6 is a cross-sectional side view of an illustrative visible light reflective coating having a four-layer interference film with an uppermost SiCrN layer and alternating SiCrCN and SiC layers, according to some embodiments.

[0016] Figure 7 is a cross-sectional side view of an illustrative visible light reflective coating having a six-layer interference film with an uppermost SiCrCN layer and alternating SiCrCN and SiC layers, according to some embodiments.

[0017] Figure 8 is a cross-sectional side view of an illustrative visible light reflective coating having a TiN opaque tinted layer and a six-layer interference film having an uppermost SiCrCN layer, SiC, SiN, and SiCrCN layers, according to some embodiments.

[0018] Fig. 9 is a cross-sectional side view of an illustrative visible light reflective coating having a TiN opaque tinted layer and a five-layer interference film having an uppermost SiCrCN layer and alternating SiC and SiCrCN layers, according to some embodiments.

[0019] Fig.10 is a cross-sectional side view of an illustrative visible light reflective coating having a TiN opaque tinted layer and a four-layer interference film having an uppermost SiCrCN layer, a SiC layer, a SiN layer, and a SiH or SiC layer, according to some embodiments.

[0020] Fig.11 is a cross-sectional side view of an illustrative visible light reflective coating having a TiN opaque tint layer and a three-layer interference film having an uppermost SiCrCN layer, a SiC layer, and a CrSiN or SiCrCN layer, according to some embodiments. DETAILED DESCRIPTION

[0021] Electronic devices and other items may be provided with conductive structures. A coating may be formed on the conductive structure to reflect visible light of a specific wavelength so that the conductive structure presents a desired color. The visible light reflective coating may be deposited on a conductive substrate. The coating may include an adhesion and transition layer on the substrate and three to six thin film interference filters on the adhesion and transition layers. If desired, an opaque coloring layer such as a Cr layer or a TiN layer may be provided between the interference filter and the adhesion and transition layers. In some specific implementations, the thin film interference filter may have an uppermost SiCrN layer, a lowermost SiN layer, and interlaced SiN and SiH layers. In other specific implementations, the thin film interference filter may include interlaced SiC and SiCrCN layers. The coating may present a robust crimson, orange, or yellow color that presents a relatively uniform visual response even if the underlying conductive structure has a three-dimensional shape.

[0022] Figure 1 An illustrative electronic device of the type that may be provided with conductive structures and visible light reflective coatings is shown. Figure 1 The electronic device 10 may be a computing device such as a laptop computer, a computer monitor including an embedded computer, a tablet computer, a cellular phone, a media player, or other handheld or portable electronic device, a smaller device such as a wristwatch device (e.g., a watch with a wristband), a hanging device, a headset or earpiece device, goggles, glasses, or other equipment worn on a user's head (e.g., a head-mounted display device), or other wearable or miniature device, a television, a computer display that does not include an embedded computer, a gaming device, a navigation device, an embedded system (such as a system in which electronic equipment with a display is installed in a kiosk or a car), a wireless base station, a home entertainment system, a wireless speaker device, a wireless access point, equipment that implements the functionality of two or more of these devices, or other electronic equipment. Figure 1 In the exemplary configuration of FIG. 1 , device 10 is a portable device, such as a cellular phone or a tablet computer, having a generally rectangular lateral profile. Other configurations may be used for device 10 if desired. Figure 1 The examples are for illustrative purposes only.

[0023] exist Figure 1In the example of , device 10 includes a display, such as display 14. Display 14 may be mounted in a housing, such as housing 12. Housing 12, which may sometimes be referred to as a shell or case, may be formed of plastic, glass, ceramic, fiber composite material, metal (e.g., stainless steel, aluminum, etc.), other suitable materials, or a combination of any two or more of these materials. Housing 12 may be formed using a one-piece configuration, in which a portion or all of housing 12 is machined or molded into a single structure, or may be formed using multiple structures (e.g., an internal frame structure, one or more structures forming an outer housing surface, etc.). Housing 12 may have metal sidewalls or sidewalls formed of other materials. Examples of metal materials that can be used to form housing 12 include stainless steel, aluminum, silver, gold, titanium, metal alloys, or any other desired conductive material.

[0024] Display 14 may be formed on (e.g., mounted on) a front side (front face) of device 10. Housing 12 may have a rear housing wall on a rear side (rear face) of device 10, opposite the front face of device 10. Conductive housing sidewalls in housing 12 may surround a perimeter of device 10. The rear housing wall of housing 12 may be formed of a conductive material and / or an insulating material.

[0025] The rear housing wall of housing 12 and / or display 14 may span the length of device 10 (eg, parallel to the Figure 1 The conductive sidewalls of housing 12 may extend across some or all of the height (e.g., parallel to the Z-axis) and width (e.g., parallel to the Y-axis) of device 10. The conductive sidewalls of housing 12 may extend across some or all of the height (e.g., parallel to the Z-axis) of device 10.

[0026] Display 14 may be a touch screen display that incorporates a layer of conductive capacitive touch sensor electrodes or other touch sensor components (e.g., resistive touch sensor components, acoustic touch sensor components, force-based touch sensor components, light-based touch sensor components, etc.) or may be a non-touch-sensitive display. Capacitive touch screen electrodes may be formed from an array of indium tin oxide pads or other transparent conductive structures.

[0027] Display 14 may include a display pixel array formed from liquid crystal display (LCD) components, an electrophoretic display pixel array, a plasma display pixel array, an organic light emitting diode (OLED) display pixel array, an electrowetting display pixel array, or display pixels based on other display technologies.

[0028] Display 14 may be protected using a display cover layer. The display cover layer may be formed of a transparent material such as glass, plastic, sapphire or other crystalline insulating material, ceramic, or other transparent material. For example, the display cover layer may extend across substantially the entire length and width of device 10.

[0029] Device 10 may include one or more buttons. The button may be formed from a conductive button member that is located within (e.g., protrudes through) an opening in housing 12 or an opening in display 14 (as examples). The button may be a rotation button, a slide button, a button that is actuated by pressing a movable button member, etc.

[0030] Figure 2 2 shows a cross-sectional side view of device 10 in an exemplary configuration in which display 14 has a display cover layer. Figure 2 As shown, display 14 may have one or more display layers that form pixel array 18. During operation, pixel array 18 forms an image for a user in an active area of ​​display 14. Display 14 may also have inactive areas (e.g., areas along the borders of pixel array 18) that do not contain pixels and do not produce images. Figure 2 Display cover layer 16 overlaps pixel array 18 in the active area and overlaps the electronic components in device 10 .

[0031] Display cover layer 16 may be formed of a transparent material such as glass, plastic, ceramic, or a crystalline material (e.g., sapphire). Exemplary configurations in which display cover layers and other transparent members (e.g., windows formed within openings in housing 12 for cameras or other light-based devices) in device 10 are formed of hard transparent crystalline materials (such as sapphire, sometimes referred to as corundum or crystalline aluminum oxide) are sometimes described herein as examples. Due to its hardness (9 on the Mohs scale), sapphire constitutes a satisfactory material for display cover layers and windows. In general, however, these transparent members may be formed of any suitable material.

[0032] Display cover layer 16 of display 14 may be planar or curved, and may have a rectangular profile, a circular profile, or a profile of other shapes. If desired, openings may be formed in the display cover layer. For example, openings may be formed in the display cover layer to accommodate buttons, speaker ports, or other components. Openings may be formed in housing 12 to form communication or data ports (e.g., audio jack ports, digital data ports, ports for subscriber identity module (SIM) cards, etc.), to form openings for buttons, or to form audio ports (e.g., openings for speakers and / or microphones). If desired, display 14 may be mounted on a conductive turntable formed by housing 12 and separated from the peripheral conductive sidewalls of housing 12 by a slot extending around the perimeter of device 10. The conductive turntable and conductive structures in display 14 may form an antenna resonating element (e.g., a patch antenna resonating element) for device 10.

[0033] If desired, device 10 may be coupled to a band such as band 28 (e.g., where device 10 is a wristwatch device). Band 28 may be used to hold device 10 on a user's wrist (as an example). Band 28 may sometimes be referred to herein as wristband 28. Figure 2 In the example of FIG. 1 , wristband 28 is connected to attachment structure 30 in housing 12 at opposite sides of device 10. Attachment structure 30 may include lugs, pins, springs, clamps, brackets, and / or other attachment mechanisms that configure housing 12 to receive wristband 28. Configurations that do not include a strap may also be used with device 10.

[0034] If desired, a light-based component such as light-based component 24 can be mounted to align with opening 20 in housing 12. Opening 20 can be circular, can be rectangular, can have an oval shape, can have a triangular shape, can have other shapes with straight edges and / or curved edges, or can have other suitable shapes (profiles when viewed from above). Window member 26 can be mounted in window opening 20 of housing 12 so that window member 26 overlaps component 18. Gaskets, washers, adhesives, screws, or other fastening mechanisms can be used to attach window member 26 to housing 12. Surface 22 of window member 26 can be flush with outer surface 23 of housing 12, can be recessed below outer surface 23, or can be as shown. Figure 3 Surface 22 may be shown protruding from outer surface 23 (eg, surface 22 may be located in a plane that protrudes away from surface 23 in the -Z direction). In other words, window member 26 may be mounted to a protruding portion of housing 12. Surface 23 may, for example, form the back of housing 12.

[0035] The conductive structures in device 10 may be provided with a visible light reflective coating that reflects certain wavelengths of light so that the conductive structures exhibit a desired aesthetic appearance (e.g., a desired color, reflectivity, etc.). The conductive structures in device 10 may include, for example, conductive portions of housing 12 (e.g., conductive side walls of device 10, conductive back wall of device 10, protruding portions of housing 12 for mounting window member 26, etc.), attachment structure 30, conductive portions of wristband 28, conductive mesh, conductive component 32, and / or any other desired conductive structures on device 10. Conductive components 32 may include internal components (e.g., internal housing members, a conductive frame, a conductive base, a conductive support plate, a conductive bracket, a conductive clamp, a conductive spring, input-output components or devices, etc.), components located inside and outside of device 10 (e.g., a conductive SIM card tray or SIM card port, a data port, a microphone port, a speaker port, a conductive button member for a ringer button, a power button, a volume button or other buttons, etc.), or components mounted on the exterior of device 10 (e.g., a conductive portion of strap 28, such as a clasp for strap 28), and / or any other desired conductive structure on device 10.

[0036] In practice, the visible light reflective coating on the conductive structures in device 10 may have different thicknesses over their (lateral) surface areas due to variations in the underlying geometry of the conductive structures (e.g., due to limitations of the coating deposition equipment to deposit a uniform coating over the entire underlying geometry). For example, the coating may exhibit a first thickness at the bottom and top edges of the conductive sidewalls, but may exhibit a second thickness along the center of the conductive sidewalls, where the second thickness is greater than the first thickness and represents a maximum thickness of the coating over its surface area (e.g., 100% thickness). If care is not taken, thickness variations along the surface area of ​​coating 36 may undesirably change the color of visible light reflected by the coating, thereby changing the aesthetic appearance of the underlying conductive structures.

[0037] Figure 3 is a cross-sectional view of a visible light reflective coating having a multilayer thin film interference filter that may be disposed on a conductive structure (e.g., Figure 1 and Figure 2 The portion of the housing 12, Figure 2 The conductive component 32, Figure 3 On the conductive side wall 12W, etc. Figure 3 As shown, a visible light reflective coating such as coating 36 may be disposed (e.g., deposited, laminated, formed, etc.) on a conductive substrate such as substrate 34. Substrate 34 may be a conductive structure in device 10, such as housing 12 ( Figure 1 and Figure 2 ) of the conductive part, the conductive component 32 ( Figure 2 ) such as conductive three-dimensional buttons or crowns, or conductive sidewalls 12W ( Figure 3 ). Substrate 35 may be thicker than coating 36. Substrate 34 may have a thickness of 0.1 mm to 5 mm, greater than 0.3 mm, greater than 0.5 mm, between 5 mm and 20 mm, less than 5 mm, less than 2 mm, less than 1.5 mm, or less than 1 mm (as examples). Substrate 34 may include stainless steel, aluminum, titanium, or other metals or alloys. In other suitable arrangements, substrate 34 may be an insulating substrate such as a ceramic substrate, a glass substrate, or a substrate formed of other materials.

[0038] The coating 36 may include an adhesion and transition layer 40 disposed on the substrate 34. If desired, the coating 36 may include an opaque colored layer, such as an opaque colored layer 42, disposed on the adhesion and transition layer 40. If desired, the opaque colored layer 42 may be omitted from the coating 36. The coating 36 may also include a multilayer thin film interference filter, such as a thin film interference filter (TFIF) 38, disposed on the opaque colored layer 42. If desired, an optional oleophobic coating or other film, coating or layer (e.g., a layer that does not substantially contribute to the color response of the coating) may be stacked on the thin film interference filter 38. The opaque colored layer 42 may, for example, have a first lateral surface that directly contacts the adhesion and transition layer 40, and may have a second lateral surface opposite the first lateral surface. The thin film interference filter 38 may, for example, have a third lateral surface that directly contacts the second lateral surface, and may have a fourth lateral surface opposite the third lateral surface (e.g., the fourth lateral surface may form the uppermost or outermost layer of the coating 36). The thin film interference filter 38 may include multiple layers (films) stacked on the opaque colored layer 42. In some implementations, the thin film interference filter 38 may include three stacked layers (films). In other implementations, the thin film interference filter 38 may include four stacked layers (films), five stacked layers (films), or six stacked layers (films). This is merely exemplary, and the thin film interference filter 38 may include other numbers of layers (e.g., more than six layers, two layers, etc.) if desired.

[0039] The layers of coating 36 can be deposited on substrate 34 using any suitable deposition technique. Examples of techniques that can be used to deposit layers in coating 36 include physical vapor deposition (e.g., evaporation and / or sputtering), cathodic arc deposition, chemical vapor deposition, ion plating, laser ablation, and the like. For example, coating 36 can be deposited on substrate 34 in a deposition system having a deposition device (e.g., a cathode). Substrate 34 can move (e.g., rotate) within the deposition system while the deposition device (e.g., cathode) deposits the layers of coating 36. If desired, substrate 34 can be dynamically moved / rotated during deposition relative to a speed and / or orientation associated with the deposition device (e.g., cathode). This can help to make coating 36 have as uniform a thickness as possible across its entire area, even in the case where substrate 34 has a three-dimensional shape (e.g., minimizing the difference in thickness across lateral areas of the coating).

[0040] The thin film interference filter 38 can be formed from a stack of materials such as inorganic dielectric layers having different refractive index values. The thin film interference filter layers can have higher refractive index values ​​(sometimes referred to as "high" refractive index values) and lower refractive index values ​​(sometimes referred to as "low" refractive index values). If desired, the high refractive index layers can be interlaced with the low refractive index layers. The incident light can be transmitted through each of the layers in the thin film interference filter 38, while also being reflected from the interfaces between each of the layers, as well as at the interface between the thin film interference filter and the opaque colored layer 42 (or the adhesion and transition layer 40 in the specific implementation where the opaque colored layer 42 is omitted from the coating 36) and at the interface between the thin film interference filter and the air. By controlling the thickness and refractive index (e.g., composition) of each layer in the thin film interference filter 38, light reflected at each interface can interfere destructively and / or constructively at a selected set of wavelengths so that the reflected light from the thin film interference filter 38 is perceived by an observer at a desired color and brightness over a corresponding viewing angle range (incident angle, e.g., from 0 degrees to 60 degrees relative to the normal axis of the conductive structure), while exhibiting a relatively constant response over the lateral area of ​​the coating even when deposited on an underlying substrate 34 having a three-dimensional (e.g., curved) shape.

[0041] Unlike the layers of the thin-film interference filter 38, the opaque colored layer 42 is substantially opaque and does not transmit light incident on the coating 36. On the other hand, the opaque colored layer 42 can reflect incident light received through the thin-film interference filter 38 toward and back through the thin-film interference filter 38. The thickness and / or composition of the opaque colored layer 42 can contribute to the color response of the light when it leaves the coating 36, as observed by the user (e.g., in combination with the interference effects imparted to the transmitted and reflected light by the thin-film interference filter 38). The opaque colored layer 42 may also sometimes be referred to herein as a non-interference filter layer or an intrinsic colored layer.

[0042] Figure 4 is a cross-sectional side view showing an exemplary composition for coating 36. Figure 4 In the example of FIG. 4 , the coating 36 does not include an opaque colored layer 42. Figure 4 As shown, adhesion and transition layers 40 may include a seed (adhesion) layer 56 on substrate 34 and one or more transition layers, such as transition layer 54, on seed layer 56. For example, adhesion and transition layers 40 may help adhere thin film interference filter 38 to substrate 34. Seed layer 56 may couple substrate 34 to transition layer 54 (e.g., transition layer may be interposed between seed layer and thin film interference filter 38).

[0043] In one example, the seed layer 56 may be formed of chromium (Cr) and the transition layer 54 may be formed of chromium silicon nitride (CrSiN). This is for exemplary purposes only. If desired, the seed layer and / or transition layer described herein may include chromium nitride (CrN), chromium silicon (CrSi), titanium (Ti), chromium silicon nitride (CrSiN), chromium silicon carbonitride (CrSiCN), chromium silicon carbide (CrSiC), chromium carbonitride (CrCN), other metals, metal alloys, and / or other materials.

[0044] Seed layer 56 may have a thickness TG. Transition layer 54 may have a thickness TF. Thickness TF may be relatively large (e.g., greater than the thickness of any other layer of coating 36 or greater than the combined thickness of all other layers of coating 36). Thickness TF may be, for example, 900nm-1100nm, 800nm-1200nm, 500nm-1500nm, greater than 100nm, greater than 500nm, greater than 800nm, less than 1200nm, less than 1500nm, or other thicknesses. Thickness TG of seed layer 56 may also be relatively large, but may generally be less than thickness TF. If desired, thickness TG may be greater than the thickness of any other layer of coating 36 except transition layer 54. Thickness TG may be, for example, 50nm-150nm, 80nm-120nm, 30nm-200nm, greater than 80nm, greater than 50nm, less than 120nm, less than 150nm, less than 200nm, or other thicknesses.

[0045] exist Figure 4 In the example of FIG. 3 , the thin film interference filter 38 is a five-layer interference filter having five stacked layers (eg, layer 44 - layer 52 ). Figure 4 As shown, the thin film interference filter 38 may include a lowermost (bottom) layer 52 laminated onto a transition layer 54. Layer 52 may have a thickness TE. The thin film interference filter 38 may include a second lowermost layer 50 laminated onto layer 52. Layer 50 may have a thickness TD. The thin film interference filter 38 may include an intermediate layer 48 laminated onto layer 50. Layer 48 may have a thickness TC. The thin film interference filter 38 may include a second uppermost layer 46 laminated onto layer 48. Layer 46 may have a thickness TB. The thin film interference filter 38 may include an uppermost layer 44 laminated onto layer 46. Layer 44 may have a thickness TA.

[0046] Layer 44 may include silicon chromium nitride (SiCrN), and thus may sometimes be referred to herein as SiCrN layer 44. Layer 46 may include silane (SiH), and thus may sometimes be referred to herein as SiH layer 46. Layer 48 may include silicon nitride (SiN), and thus may sometimes be referred to herein as SiN layer 48. Layer 50 may include SiH, and thus may sometimes be referred to herein as SiH layer 50. Layer 52 may include SiN, and thus may sometimes be referred to herein as SiN layer 52. In other words, thin film interference filter 38 may include an uppermost SiCrN layer 44 stacked on alternating (interleaved) SiH and SiN layers (e.g., SiH layer 46, SiN layer 48, SiH layer 50, and SiN layer 52). Figure 4 The examples are merely illustrative. The layers of the thin film interference filter 38 may be arranged in other orders and / or may have other compositions. The transition layer 54 may contain a higher percentage of Cr atoms than Si atoms, while the SiCrN layer 44 contains a higher percentage of Si atoms than Cr atoms.

[0047] The composition and thickness of the various layers of the thin film interference filter 38 may be selected so that the coating 36 exhibits a robust deep orange or red color over a predetermined range of incident angles. The thickness TA of the SiCrN layer 44 may be selected, for example, to be 30 nm-40 nm, 20 nm-50 nm, 10 nm-60 nm, 5 nm-40 nm, 30 nm-80 nm, greater than 30 nm, greater than 20 nm, less than 40 nm, less than 50 nm, or other thicknesses. The thickness TB of the SiH layer 46 may be selected, for example, to be greater than the thickness TA (e.g., 40 nm-50 nm, 30 nm-60 nm, 20 nm-70 nm, 10 nm-50 nm, 40 nm-80 nm, greater than 40 nm, greater than 30 nm, greater than 20 nm, less than 50 nm, less than 80 nm, or other thicknesses). The thickness TC of SiN layer 48 may be selected, for example, to be less than thickness TA and / or thickness TB (e.g., 10 nm-20 nm, 10 nm-30 nm, 5 nm-25 nm, 10 nm-40 nm, 5 nm-30 nm, less than 20 nm, less than 25 nm, less than 30 nm, greater than 10 nm, or other thicknesses). The thickness TD of SiH layer 50 may be selected, for example, to be greater than thickness TA, TB, and / or TC (e.g., 50 nm-60 nm, 40 nm-70 nm, 55 nm-95 nm, 20 nm-120 nm, greater than 50 nm, greater than 40 nm, less than 60 nm, less than 80 nm, less than 100 nm, or other thicknesses). The thickness TE of SiN layer 52 may be selected, for example, to be less than thickness TD and / or greater than thickness TA, TB and / or TC (e.g., 50nm-60nm, 40nm-70nm, 45nm-85nm, 20nm-100nm, greater than 50nm, greater than 40nm, less than 60nm, less than 70nm, or other thicknesses).

[0048] When configured in this manner, the coating 36 may exhibit a dark orange or red color (e.g., may impart a dark orange or red color to the substrate 34). For example, at a location where the coating 36 exhibits a maximum thickness and an incident angle (viewing angle) of zero degrees (e.g., in the normal direction of the location of maximum thickness), the coating 36 may exhibit an L* value of 60-70, 60-65, 50-70, 40-80, 30-80, greater than 60, greater than 55, greater than 50, greater than 40, less than 65, less than 70, less than 80, or other values ​​(e.g., in the L*a*b* color space or another color space). At this point and viewing angle, the coating 36 may exhibit an a* value of 20-30, 25-30, 15-35, 10-40, 5-50, greater than 25, greater than 20, greater than 15, greater than 10, less than 30, less than 35, less than 40, less than 50, or other values ​​(e.g., in the L*a*b* color space or another color space). Moreover, at this point and viewing angle, coating 36 may exhibit a b* value of 60-70, 55-65, 50-70, 45-75, 40-80, 30-80, greater than 60, greater than 55, greater than 50, greater than 40, less than 65, less than 70, less than 80, or other values ​​(e.g., in L*a*b* color space or another color space).

[0049] Where the coating 36 does not include the opaque colored layer 42 Figure 4 The examples are merely illustrative. If desired, the coating 36 may include an opaque colored layer 42 interposed between the thin film interference filter 38 and the transition layer 54, such as Figure 5 As shown in the example. Figure 5 As shown, the coating 36 may include an opaque tinted layer 42 between the thin film interference filter 38 and the adhesion and transition layer 40 . Figure 5 The opaque colored layer 42 may include chromium (Cr) and may therefore sometimes be referred to herein as the Cr opaque colored layer 42 .

[0050] The thickness of the Cr opaque colored layer 42 may be selected, for example, to be greater than the thickness of each layer of the thin film interference filter 38 (e.g., 70 nm-80 nm, 60 nm-80 nm, 55 nm-90 nm, 70 nm-75 nm, greater than 70 nm, greater than 60 nm, greater than 50 nm, less than 75 nm, less than 80 nm, less than 90 nm, or other thicknesses). In this implementation, if desired, the thickness of the SiH layer 46 may be less than the thickness of the SiCrN layer 44, and the thickness of the SiN layer 52 may be greater than the thickness of the SiH layer 50. If desired, the thickness of the SiCrN layer 44, the SiN layer 48, the SiH layer 50, and / or the SiN layer 52 may be greater than Figure 4 The corresponding thickness in the specific implementation of and / or the thickness of the SiH layer 46 may be less than Figure 4When configured in this manner, the thickness of the SiH layer 46 is the same as that of the embodiment in which the opaque colored layer 42 is omitted. Figure 4 Coating 36 may exhibit a higher L* value, a higher b* value, and / or a lower a* value compared to the examples of FIG.

[0051] Figure 4 and Figure 5 The example in which the thin film interference filter 38 is a five-layer thin film interference filter is merely illustrative. If desired, the thin film interference filter 38 may be a four-layer thin film interference filter, such as Figure 6 As shown in the example. Figure 6 In the example of FIG. 4 , the opaque colored layer 42 has been omitted from the coating 36 .

[0052] like Figure 6 As shown, the thin film interference filter 38 may include a lowermost (bottom) layer 64 stacked on the transition layer 54. The thin film interference filter 38 may include a second lowermost layer 62 stacked on the layer 64. The thin film interference filter 38 may include a second uppermost layer 60 stacked on the layer 62. The thin film interference filter 38 may include an uppermost (top) layer 58 stacked on the layer 60.

[0053] Layer 58 may include SiCrN, and thus may sometimes be referred to herein as SiCrN layer 58. Layer 60 may include silicon carbide (SiC), and thus may sometimes be referred to herein as SiC layer 60. Layer 62 may include silicon chromium carbonitride (SiCrCN), and thus may sometimes be referred to herein as SiCrCN layer 62. Layer 64 may include SiC, and thus may sometimes be referred to herein as SiC layer 64. In other words, thin film interference filter 38 may include an uppermost SiCrN layer 58 stacked on alternating (interleaved) SiC and SiCrCN layers. Figure 6 The examples are merely illustrative. The layers of the thin film interference filter 38 may be arranged in other orders and / or may have other compositions.

[0054] The composition and thickness of the various layers of the thin film interference filter 38 may be selected so that the coating 36 exhibits a robust deep orange or red color within a predetermined range of incident angles. The thickness of the SiCrN layer 58 may be selected, for example, to be 20 nm-30 nm, 10 nm-40 nm, 20 nm-25 nm, 15 nm-35 nm, 5 nm-30 nm, greater than 20 nm, greater than 10 nm, less than 25 nm, less than 30 nm, less than 50 nm, or other thicknesses. The thickness of the SiC layer 60 may be selected, for example, to be greater than the thickness of the SiCrN layer 58 (e.g., 30 nm-40 nm, 25 nm-40 nm, 20 nm-35 nm, 15 nm-45 nm, 10 nm-50 nm, greater than 30 nm, greater than 20 nm, less than 35 nm, less than 40 nm, less than 50 nm, or other thicknesses). The thickness of the SiCrCN layer 62 may be, for example, selected to be greater than the thickness of the SiCrN layer 58 and / or the SiC layer 60 (e.g., 80nm-90nm, 70nm-100nm, 85nm-95nm, 60nm-110nm, greater than 80nm, greater than 70nm, less than 90nm, less than 100nm, or other thicknesses). The thickness of the SiC layer 64 may be, for example, selected to be greater than the thickness of the SiCrN layer 58 and / or the SiC layer 60 and / or less than the thickness of the SiCrCN layer 62 (e.g., 40nm-50nm, 40nm-45nm, 35nm-50nm, 30nm-60nm, 20nm-70nm, greater than 40nm, greater than 35nm, greater than 30nm, greater than 20nm, less than 45nm, less than 50nm, less than 60nm, or other thicknesses).

[0055] When configured in this manner, coating 36 can exhibit a yellow color (e.g., can impart a yellow color to substrate 34). For example, at a location where coating 36 exhibits a maximum thickness and at an incident angle (viewing angle) of zero degrees (e.g., in the normal direction of the location of maximum thickness), coating 36 can exhibit an L* value of 80-90, 70-100, 75-95, 60-100, greater than 80, greater than 75, greater than 70, greater than 60, less than 85, less than 90, less than 100, or other values. At this point and viewing angle, coating 36 can exhibit an a* value of -5-5, -2-2, -10-10, -15-15, -5-10, greater than -1, greater than -5, less than 5, less than 10, or other values. Additionally, at this point and viewing angle, coating 36 may exhibit a b* value of 60-70, 55-75, 50-80, 40-90, greater than 60, greater than 55, greater than 50, greater than 40, less than 65, less than 70, less than 80, or other values.

[0056] Figure 74 is a cross-sectional side view of coating 36 in an example where thin film interference filter 38 is a six-layer thin film interference filter and coating 36 includes an opaque colored layer 42. For clarity, Figure 7 The adhesion and transition layer 40 is not shown. Figure 3 ).

[0057] like Figure 7 As shown, coating 36 may include an opaque colored layer 42 between thin film interference filter 38 and substrate 34 . Figure 7 The opaque colored layer 42 may include titanium nitride (TiN) and may therefore sometimes be referred to herein as the TiN opaque colored layer 42 .

[0058] The thickness of TiN opaque colored layer 42 may, for example, be selected to be greater than the thickness of each layer of thin film interference filter 38 (e.g., 200nm-300nm, 100nm-400nm, 210nm-230nm, greater than 200nm, greater than 100nm, less than 250nm, less than 300nm, or other thicknesses).

[0059] The thin film interference filter 38 may include a lowermost (bottom) layer 76 laminated onto the TiN opaque colored layer 42. The thin film interference filter 38 may include a second lowermost layer 74 laminated onto the layer 76. The thin film interference filter 38 may include a third lowermost layer 72 laminated onto the layer 74. The thin film interference filter 38 may include a third uppermost layer 70 laminated onto the layer 72. The thin film interference filter 38 may include a second uppermost layer 68 laminated onto the layer 70. The thin film interference filter 38 may include an uppermost (top) layer 66 laminated onto the layer 68.

[0060] Layer 66 may include SiCrCN, and thus may sometimes be referred to herein as SiCrCN layer 66. Layer 68 may include SiC, and thus may sometimes be referred to herein as SiC layer 68. Layer 70 may include SiCrCN, and thus may sometimes be referred to herein as SiCrCN layer 70. Layer 72 may include SiC, and thus may sometimes be referred to herein as SiC layer 72. Layer 74 may include SiCrCN, and thus may sometimes be referred to herein as SiCrCN layer 74. Layer 76 may include SiC, and thus may sometimes be referred to herein as SiC layer 76. In other words, thin film interference filter 38 may include alternating (interleaved) SiC and SiCrCN layers, with uppermost SiCrCN layer 66. Figure 7 The examples are merely illustrative. The layers of thin film interference filter 38 may be arranged in other orders and / or may have other compositions.

[0061] The composition and thickness of the various layers of the thin film interference filter 38 can be selected so that the coating 36 presents a robust deep orange or red color within a predetermined range of incident angles. The thickness of the SiCrCN layer 66 can be selected, for example, to be 40nm-50nm, 30nm-60nm, 20nm-70nm, greater than 40nm, greater than 30nm, greater than 20nm, less than 50nm, less than 60nm, or other thicknesses. The thickness of the SiC layer 68 can be selected, for example, to be greater than the thickness of the SiCrCN layer 66 (e.g., 60nm-70nm, 60nm-75nm, 50nm-80nm, 55nm-90nm, greater than 60nm, greater than 50nm, less than 70nm, less than 80nm, or other thicknesses). The thickness of SiCrCN layer 70 may be, for example, selected to be less than the thickness of SiCrCN layer 66 and / or SiC layer 68 (e.g., 30nm-40nm, 25nm-50nm, 20nm-60nm, 10nm-70nm, greater than 30nm, greater than 20nm, less than 40nm, less than 50nm, or other thicknesses). The thickness of SiC layer 72 may be, for example, selected to be less than the thickness of SiCrCN layer 66 and / or SiC layer 68 (e.g., 30nm-40nm, 25nm-50nm, 20nm-60nm, 10nm-70nm, greater than 30nm, greater than 20nm, less than 40nm, less than 50nm, or other thicknesses). The thickness of the SiCrCN layer 74 may be, for example, selected to be greater than the thickness of the SiCrCN layer 70, the SiCrCN layer 66, and / or the SiC layer 72 (e.g., 55nm-65nm, 50nm-70nm, 40nm-80nm, greater than 60nm, greater than 50nm, greater than 40nm, less than 65nm, less than 70nm, less than 80nm, or other thicknesses). The thickness of the SiC layer 76 may be, for example, selected to be greater than the thickness of the SiCrCN layer 70, the SiCrCN layer 66, and / or the SiC layer 72 and / or less than the thickness of the SiCrCN layer 74 (e.g., 50nm-60nm, 40nm-65nm, 30nm-70nm, greater than 50nm, greater than 40nm, less than 55nm, less than 60nm, less than 80nm, or other thicknesses).

[0062] When configured in this manner, the coating 36 may exhibit a dark orange or red color (e.g., may impart a dark orange or red color to the substrate 34). For example, at a location where the coating 36 exhibits a maximum thickness and at an incident angle (viewing angle) of zero degrees (e.g., in the normal direction of the location of maximum thickness), the coating 36 may exhibit an L* value of 50-60, 45-55, 40-65, 30-70, greater than 50, greater than 45, less than 55, less than 60, less than 70, or other values. At this point and viewing angle, the coating 36 may exhibit an a* value of 35-45, 30-50, 25-55, 20-60, greater than 35, greater than 30, greater than 20, less than 45, less than 50, less than 60, or other values. In addition, at this point and viewing angle, the coating 36 may exhibit a b* value of 40-50, 30-60, 25-70, greater than 40, greater than 30, less than 50, less than 60, or other values.

[0063] If necessary, such as Figure 8 As shown in the example of FIG. 3 , a SiN layer may be used in place of the SiCrCN layer 70 in the thin film interference filter 38. For clarity, Figure 8 The adhesion and transition layer 40 (between the TiN opaque colored layer 42 and the substrate 34) is not shown. Figure 3 ).

[0064] like Figure 8 As shown, the thin film interference filter 38 may include a lowermost (bottom) layer 88 (e.g., SiC layer 88) stacked onto the TiN opaque colored layer 42. The thin film interference filter 38 may include a second lowermost layer 86 (e.g., SiCrCN layer 86) stacked onto the layer 88. The thin film interference filter 38 may include a third lowermost layer 84 (e.g., SiC layer 84) stacked onto the layer 86. The thin film interference filter 38 may include a third uppermost layer 82 stacked onto the layer 84. The layer 82 may include SiN, and therefore may sometimes be referred to herein as the SiN layer 82. The thin film interference filter 38 may include a second uppermost layer 80 (e.g., SiC layer 80) stacked onto the layer 82. The thin film interference filter 38 may include an uppermost (top) layer 78 (e.g., SiCrCN layer 78) stacked onto the layer 80. Figure 8 The examples are merely illustrative. The layers of the thin film interference filter 38 may be arranged in other orders and / or may have other compositions.

[0065] The composition and thickness of the various layers of the thin film interference filter 38 can be selected so that the coating 36 presents a robust deep orange or red color within a predetermined range of incident angles. The thickness of the SiCrCN layer 66 can be selected, for example, to be 60nm-70nm, 50nm-80nm, 40nm-90nm, greater than 60nm, greater than 50nm, less than 70nm, less than 80nm, or other thicknesses. The thickness of the SiC layer 80 can be selected, for example, to be 50nm-60nm, 50nm-70nm, 40nm-80nm, greater than 50nm, greater than 40nm, less than 60nm, less than 70nm, or other thicknesses. The thickness of the SiN layer 82 can be selected, for example, to be 30nm-40nm, 20nm-50nm, greater than 30nm, greater than 20nm, less than 40nm, less than 50nm, or other thicknesses. The thickness of the SiC layer 84 may be, for example, selected to be greater than the thickness of the other layers of the thin film interference filter 38 (e.g., 100 nm-150 nm, 80 nm-200 nm, 110 nm-130 nm, greater than 100 nm, greater than 110 nm, greater than 80 nm, less than 130 nm, less than 150 nm, or other thicknesses). The thickness of the SiCrCN layer 86 may be, for example, selected to be 70 nm-80 nm, 60 nm-80 nm, 50 nm-90 nm, greater than 70 nm, greater than 60 nm, less than 80 nm, less than 90 nm, or other thicknesses. The thickness of the SiC layer 88 may be, for example, selected to be 50 nm-60 nm, 40 nm-70 nm, greater than 50 nm, greater than 40 nm, less than 60 nm, less than 70 nm, or other thicknesses.

[0066] Fig. 9 FIG. 4 is a cross-sectional side view of coating 36 in an example where thin film interference filter 38 is a five-layer thin film interference filter having alternating SiCrCN and SiC layers and where coating 36 includes an opaque colored layer 42. For clarity, FIG. Fig. 9 The adhesion and transition layer 40 is not shown. Figure 3 ).

[0067] like Fig. 9As shown, the thin film interference filter 38 may include a lowermost (bottom) layer 98 (e.g., SiCrCN layer 98) stacked onto the TiN opaque colored layer 42. The thin film interference filter 38 may include a second lowermost layer 96 (e.g., SiC layer 96) stacked onto the layer 98. The thin film interference filter 38 may include an intermediate layer 94 (e.g., SiCrCN layer 94) stacked onto the layer 96. The thin film interference filter 38 may include a second uppermost layer 92 (e.g., SiC layer 92) stacked onto the layer 94. The thin film interference filter 38 may include an uppermost (top) layer 90 (e.g., SiCrCN layer 90) stacked onto the layer 82. In other words, the thin film interference filter 36 may have an uppermost SiCrCN layer 90 stacked onto alternating (interleaved) SiC and SiCrCN layers. Fig. 9 The examples are merely illustrative. The layers of the thin film interference filter 38 may be arranged in other orders and / or may have other compositions.

[0068] The composition and thickness of each layer of the thin film interference filter 38 can be selected so that the coating 36 presents a robust deep orange or red color within a predetermined range of incident angles. The thickness of the SiCrCN layer 90 can be selected, for example, to be 60nm-70nm, 50nm-80nm, 40nm-90nm, greater than 60nm, greater than 50nm, less than 70nm, less than 80nm, or other thicknesses. The thickness of the SiC layer 92 can be selected, for example, to be greater than the thickness of the other layers of the thin film interference filter 38 (e.g., 100nm-150nm, 80nm-200nm, 110nm-130nm, greater than 100nm, greater than 110nm, greater than 80nm, less than 130nm, less than 150nm, or other thicknesses). The thickness of the SiCrCN layer 94 can be selected, for example, to be 60nm-70nm, 50nm-80nm, greater than 60nm, greater than 50nm, less than 70nm, less than 80nm, or other thicknesses. The thickness of the SiC layer 96 can be, for example, selected to be 20nm-30nm, 20nm-40nm, 10nm-50nm, greater than 20nm, greater than 10nm, less than 30nm, less than 40nm, less than 50nm, or other thicknesses. Alternatively, the thickness of the SiC layer 96 can be selected to be 100nm-120nm, 90nm-130nm, greater than 100nm, greater than 80nm, less than 120nm, less than 130nm, or other thicknesses. The thickness of the SiCrCN layer 98 can be, for example, selected to be 35nm-55nm, 30nm-50nm, 20nm-60nm, greater than 40nm, greater than 30nm, less than 50nm, less than 60nm, or other thicknesses.

[0069] Fig.104 is a cross-sectional side view of coating 36 in another example in which thin film interference filter 38 is a four-layer thin film interference filter having an uppermost SiCrCN layer and in which coating 36 includes an opaque colored layer 42. For clarity, Fig.10 The adhesion and transition layer 40 ( Figure 3 ).

[0070] like Fig.10 As shown, the thin film interference filter 38 may include a lowermost (bottom) layer 108 (e.g., SiH or SiC layer 108) stacked onto the TiN opaque colored layer 42. The thin film interference filter 38 may include a second lowermost layer 106 (e.g., SiN layer 106) stacked onto the layer 108. The thin film interference filter 38 may include a second uppermost layer 104 (e.g., SiC layer 104) stacked onto the layer 106. The thin film interference filter 38 may include an uppermost (top) layer 102 (e.g., SiCrCN layer 102) stacked onto the layer 104. Fig.10 The examples are merely illustrative. The layers of the thin film interference filter 38 may be arranged in other orders and / or may have other compositions.

[0071] The composition and thickness of each layer of the thin film interference filter 38 can be selected so that the coating 36 presents a robust deep orange or red color within a predetermined range of incident angles. The thickness of the SiCrCN layer 102 can be selected, for example, to be 60nm-70nm, 50nm-80nm, 40nm-90nm, greater than 60nm, greater than 50nm, less than 70nm, less than 80nm, or other thicknesses. The thickness of the SiC layer 104 can be selected, for example, to be greater than the thickness of the other layers of the thin film interference filter 38 (e.g., 100nm-150nm, 80nm-200nm, 110nm-130nm, greater than 100nm, greater than 110nm, greater than 80nm, less than 130nm, less than 150nm, or other thicknesses). The thickness of the SiN layer 106 can be selected, for example, to be 60nm-70nm, 50nm-80nm, greater than 60nm, greater than 50nm, less than 70nm, less than 80nm, or other thicknesses. The thickness of layer 108 may be selected, for example, to be 40 nm-60 nm, 30 nm-70 nm, greater than 40 nm, greater than 30 nm, less than 60 nm, less than 70 nm, or other thicknesses.

[0072] Fig.11 4 is a cross-sectional side view of coating 36 in another example in which thin film interference filter 38 is a three-layer thin film interference filter having an uppermost SiCrCN layer and in which coating 36 includes an opaque colored layer 42. For clarity, Fig.11 The adhesion and transition layer 40 ( Figure 3 ).

[0073] like Fig.11 As shown, the thin film interference filter 38 may include a lowermost (bottom) layer 114 (e.g., a CrSiN or SiCrCN layer 114) laminated to the TiN opaque colored layer 42. The thin film interference filter 38 may include an intermediate layer 112 (e.g., a SiC layer 112) laminated to the layer 114. The thin film interference filter 38 may include an uppermost (top) layer 110 (e.g., a SiCrCN layer 110) laminated to the layer 112. Fig.11 The examples are merely illustrative. The layers of the thin film interference filter 38 may be arranged in other orders and / or may have other compositions.

[0074] The composition and thickness of each layer of the thin film interference filter 38 can be selected so that the coating 36 presents a robust deep orange or red color within a predetermined range of incident angles. The thickness of the SiCrCN layer 110 can be selected, for example, to be 30nm-70nm, 20nm-80nm, greater than 30nm, greater than 20nm, less than 70nm, less than 80nm, or other thicknesses. The thickness of the SiC layer 112 can be selected, for example, to be greater than the thickness of the other layers of the thin film interference filter 38 (e.g., 100nm-150nm, 80nm-200nm, 90nm-130nm, greater than 100nm, greater than 900nm, greater than 80nm, less than 120nm, less than 130nm, or other thicknesses). The thickness of the layer 114 can be selected, for example, to be 30nm-50nm, 20nm-60nm, greater than 30nm, greater than 20nm, less than 50nm, less than 60nm, or other thicknesses.

[0075] Figures 3 to 11 The examples are merely illustrative. Additional elements, metals, oxides, or materials may be included in one or more of the layers of coating 36. The layers may be arranged in other orders. The layers may have different thicknesses or compositions. The coating may have other color distributions and angular responses. The layers described herein may also sometimes be referred to as films.

[0076] According to one embodiment, a device is provided, comprising: a conductive substrate; and a coating located on the conductive substrate and having a color, the coating comprising an adhesion and transition layer; and a thin film interference filter on the adhesion and transition layer, the thin film interference filter having a lowermost layer in contact with the adhesion and transition layer and an uppermost layer opposite to the lowermost layer, the uppermost layer comprising SiCrN, and the lowermost layer comprising SiN.

[0077] According to another embodiment, the thin film interference filter is a five-layer thin film interference filter.

[0078] According to another embodiment, the device includes a thin film interference filter including a first SiH layer stacked on a lowermost layer, a SiN layer stacked on the first SiH layer, and a second SiH layer stacked on the SiN layer, the second SiH layer being interposed between the uppermost layer and the SiN layer.

[0079] According to another embodiment, the adhesion and transition layer comprises a CrSiN layer in contact with the lowermost layer of the thin film interference filter, and a Cr layer between the CrSiN layer and the conductive substrate.

[0080] According to another embodiment, the first SiH layer is thicker than the second SiH layer, the uppermost layer, the SiN layer, and the lowermost layer.

[0081] According to another embodiment, the uppermost layer has a first thickness between 20 nm and 50 nm, the first SiH layer has a second thickness between 30 nm and 60 nm, and the SiN layer has a third thickness between 10 nm and 30 nm.

[0082] According to another embodiment, the fourth thickness of the second SiH layer is between 40 nm and 70 nm, and the fifth thickness of the lowermost layer is between 40 nm and 70 nm.

[0083] According to another embodiment, the coating has an L* value greater than 50, an a* value greater than 10, and a b* value greater than 40 at the location of maximum thickness and at a viewing angle of zero degrees.

[0084] According to another embodiment, the device comprises a wristwatch, and the conductive substrate comprises a button on the wristwatch.

[0085] According to one embodiment, a device is provided, which includes a conductive substrate and a coating, which is located on the conductive substrate and has a color, the coating including: an adhesion and transition layer; an opaque layer, which is located on the adhesion and transition layer; an opaque layer containing chromium; and a thin film interference filter, which is located on the opaque layer, the thin film interference filter having an uppermost layer containing SiCrN and a lowermost layer containing SiN.

[0086] According to another embodiment, the thin film interference filter is a five-layer interference filter.

[0087] According to another embodiment, the thin film interference filter includes a first SiH layer stacked on a lowermost layer, a SiN layer stacked on the first SiH layer, and a second SiH layer stacked on the SiN layer, the second SiH layer being interposed between the uppermost layer and the SiN layer.

[0088] According to another embodiment, the adhesion and transition layer comprises a CrSiN layer in contact with the lowermost layer of the thin film interference filter, and a Cr layer between the CrSiN layer and the conductive substrate.

[0089] According to another embodiment, the coating has an L* value greater than 50, an a* value greater than 10, and a b* value greater than 40 at the location of maximum thickness and at a viewing angle of zero degrees.

[0090] According to another embodiment, the device comprises a wristwatch, and the conductive substrate comprises a button on the wristwatch.

[0091] According to one embodiment, a device, a conductive substrate, and a coating located on the conductive substrate and having a color are provided, the coating including an adhesion and transition layer and a thin film interference filter located on the adhesion and transition layer, the thin film interference filter having a first SiC layer, a first SiCrCN layer on the first SiC layer, and a second SiC layer on the first SiCrCN layer, the first SiC layer forming the lowermost layer of the thin film interference filter.

[0092] According to another embodiment, the coating comprises an opaque layer between the first SiC layer and the adhesion and transition layer, the opaque layer comprising titanium nitride.

[0093] According to another embodiment, the thin film interference filter is a six-layer interference filter and includes a second SiCrCN layer on the second SiC layer, a third SiC layer on the second SiCrCN layer, and a third SiCrCN layer on the third SiC layer, the third SiCrCN layer forming the uppermost layer of the thin film interference filter.

[0094] According to another embodiment, the thin film interference filter is a four-layer interference filter and comprises a SiCrN layer on the second SiC layer, the SiCrN layer forming the uppermost layer of the thin film interference filter.

[0095] According to another embodiment, the adhesion and transition layer includes a CrSiN layer in contact with the first SiC layer, and a Cr layer interposed between the CrSiN layer and the conductive substrate.

[0096] The foregoing is merely illustrative and various modifications may be made to the embodiments described. The foregoing embodiments may be implemented independently or in any combination.

Claims

1. A device comprising: Conductive substrate; and A coating layer, the coating layer being located on the conductive substrate and having a color, the coating layer comprising: Adhesion and transition layers, and a thin film interference filter disposed on the adhesion and transition layer, wherein the thin film interference filter has a lowermost layer in contact with the adhesion and transition layer and an uppermost layer opposite to the lowermost layer, the uppermost layer comprising SiCrN, And the lowermost layer includes SiN. 2 . The device according to claim 1 , wherein the thin film interference filter is a five-layer thin film interference filter.

3. The device according to claim 2, wherein the thin film interference filter further comprises: a first SiH layer stacked on the lowermost layer; A SiN layer, the SiN layer being stacked on the first SiH layer; and a second SiH layer, the second SiH layer being stacked on the SiN layer, the second A SiH layer is interposed between the uppermost layer and the SiN layer.

4. The device of claim 3, wherein the adhesion and transition layer comprises: a CrSiN layer, the CrSiN layer being in contact with the lowermost layer of the thin film interference filter; and A Cr layer is disposed between the CrSiN layer and the conductive substrate. 5 . The device of claim 3 , wherein the first SiH layer is thicker than the second SiH layer, the uppermost layer, the SiN layer, and the lowermost layer.

6. The device of claim 3, wherein the uppermost layer has a first thickness between 20 nm and 50 nm, the first SiH layer has a second thickness between 30 nm and 60 nm, and the SiN layer has a third thickness between 10 nm and 30 nm.

7. The device of claim 6, wherein the second SiH layer has a fourth thickness between 40 nm and 70 nm, and the lowest layer has a fifth thickness between 40 nm and 70 nm.

8. The device of claim 1, wherein the coating has an L* value greater than 50, an a* value greater than 10, and a b* value greater than 40 at a location of maximum thickness and a viewing angle of zero degrees.

9. The device of claim 1, wherein the device comprises a wristwatch and the conductive substrate comprises a button on the wristwatch.

10. An apparatus comprising: Conductive substrate; and A coating layer, the coating layer being located on the conductive substrate and having a color, the coating layer comprising: Adhesion and transition layers, an opaque layer disposed on the adhesion and transition layer, the opaque layer comprising chrome, and A thin film interference filter is located on the opaque layer, the thin film interference filter having an uppermost layer containing SiCrN and a lowermost layer containing SiN. The device of claim 10 , wherein the thin film interference filter is a five-layer interference filter.

12. The device according to claim 11, wherein the thin film interference filter further comprises: a first SiH layer stacked on the lowermost layer; A SiN layer, the SiN layer being stacked on the first SiH layer; and a second SiH layer, the second SiH layer being stacked on the SiN layer, the second A SiH layer is interposed between the uppermost layer and the SiN layer.

13. The device of claim 12, wherein the adhesion and transition layer comprises: a CrSiN layer, the CrSiN layer being in contact with the lowermost layer of the thin film interference filter; and A Cr layer is disposed between the CrSiN layer and the conductive substrate.

14. The device of claim 10, wherein the coating has an L* value greater than 50, an a* value greater than 10, and a b* value greater than 40 at a location of maximum thickness and a viewing angle of zero degrees.

15. The device of claim 10, wherein the device comprises a wristwatch and the conductive substrate comprises a button on the wristwatch.

16. A device, a conductive substrate; and A coating layer, the coating layer being located on the conductive substrate and having a color, the coating layer comprising: Adhesion and transition layers, and A thin film interference filter is located on the adhesion and transition layer, wherein the thin film interference filter has a first SiC layer, a first SiCrCN layer on the first SiC layer, and a second SiC layer on the first SiCrCN layer, and the first SiC layer forms the lowermost layer of the thin film interference filter.

17. The device of claim 16, wherein the coating comprises an opaque layer between the first SiC layer and the adhesion and transition layer, the opaque layer comprising titanium nitride.

18. The apparatus according to claim 17, wherein the thin film interference filter is a six-layer interference filter, and the thin film interference filter further comprises: a second SiCrCN layer, the second SiCrCN layer being located on the second SiC layer; a third SiC layer, the third SiC layer being located on the second SiCrCN layer; and A third SiCrCN layer is located on the third SiC layer, and the third SiCrCN layer forms the uppermost layer of the thin film interference filter.

19. The apparatus according to claim 16, wherein the thin film interference filter is a four-layer interference filter, and the thin film interference filter further comprises: A SiCrN layer is located on the second SiC layer, and the SiCrN layer forms the uppermost layer of the thin film interference filter.

20. The device of claim 19, wherein the adhesion and transition layer comprises: a CrSiN layer, the CrSiN layer being in contact with the first SiC layer; and A Cr layer is interposed between the CrSiN layer and the conductive substrate.

Images