Testing method of organic electrochemical transistor tuning dual-mode flexible band-pass filter

Abstract

The invention relates to a test method of an organic electrochemical transistor tuning dual-mode flexible band-pass filter. The IPC classification number is G01N3 / 32. According to the organic electrochemical transistor tuning dual-mode flexible band-pass filter, the thickness of a silver metal film is gradually increased from the inner edge to the outer edge of a leading-out end part, connected with a filter functional area, of the organic electrochemical transistor tuning dual-mode flexible band-pass filter, and the thickness is gradually increased to 2-3 times from the thickness of the filter functional area; and an interface stress tolerance area between the silver metal film layer and the polyimide film is gradually transferred to the leading-out end part and presents a gradual change trend. When bending, folding and twisting tests are carried out on the flexible band-pass filter, the problems that the leading-out end part is cracked, fractured, peeled off and the like earlier than the functional area of the filter can be avoided, so that the mechanical property of the flexible band-pass filter can be accurately, objectively and completely tested in the whole test process; and the condition that the leading-out end part is damaged in advance when the mechanical property of the filter is not completely tested is avoided.

Description

Technical Field

[0001] The invention relates to a flexible microwave thin film device and a testing method thereof, in particular to a bending, folding and twisting testing method of an organic electrochemical transistor tuned dual-mode flexible bandpass filter, and the IPC classification number is G01N3 / 32. Background Art

[0002] Flexible microwave thin film devices include flexible microwave filters or flexible microwave antennas, which have been widely used. As wearable electronic components, flexible microwave filters or flexible microwave antennas are often subjected to bending, folding, twisting and other effects. For flexible microwave filters or flexible microwave antennas, it is inevitable to withstand repeated stretching, bending and other deformations during use. At this time, debonding and slippage may occur at the interface between the metal layer and the substrate, and the failure of this interface often precedes the destruction of the material itself.

[0003] When a flexible microwave filter or a flexible microwave antenna is in a bent state, the metal layer attached to the flexible substrate will be subjected to stress caused by bending and stretching, which will cause micro cracks, increase resistivity or even open circuit after repeated many times, thus affecting the electrical performance of the flexible microwave antenna / filter, and its frequency characteristics will deviate from the predetermined value. Therefore, before the flexible microwave filter or flexible microwave antenna is officially put into use, it is often necessary to conduct sampling tests on the produced products to test their performance degradation after multiple bending.

[0004] The existing testing method usually uses a bending tester to perform multiple bending fatigue tests on flexible microwave thin film devices, such as 10,000 times, and then uses a network analyzer to test and analyze its frequency characteristics. However, this testing method can only pre-set the number of bending fatigue times (such as 10,000 times) and then remove the flexible microwave thin film device, and then connect the flexible microwave thin film device to the network analyzer for frequency characteristic testing. When the network analyzer test results show that its frequency characteristics will deviate from the predetermined value by more than a certain threshold and cannot be put into use, we do not know exactly how many times it has been bent before its performance becomes unreliable. Perhaps its performance has seriously deteriorated after 500 times, or it may be 3,000 times, or 8,000 times... It is impossible to know exactly when the bending caused the damage, and it is impossible to accurately test the expected service life of the flexible microwave thin film device. This obviously cannot meet the product testing needs in the factory.

[0005] Of course, the flexible microwave thin film device can also be connected to a network analyzer for frequency characteristic testing every time it is bent, or connected to a network analyzer for testing every 10 times it is bent. This way, the number of bending times the flexible microwave thin film device can withstand and its expected service life can be known more accurately. However, for flexible microwave thin film devices that often withstand tens of thousands of bends, this testing method is undoubtedly time-consuming, labor-intensive, extremely cumbersome, error-prone, and frustrating.

[0006] On the other hand, in the existing testing method, a bending tester is used to subject the flexible microwave thin film device to multiple bending fatigue tests. Since the bending degree of the lead wire portion on the flexible substrate is greater than that of the microwave functional area, the bending fatigue stress of the lead wire portion is greater than the stress of the microwave functional area. The metal film in the lead wire area often cracks and breaks before the metal film in the functional area. The test results cannot truly reflect the bending resistance of the microwave functional area of ​​the flexible microwave thin film device.

[0007] An accurate and reliable method for the bending performance of flexible microwave filters is urgently needed.

[0008] In addition, as an important part of modern wireless communication systems, microwave filters need to be able to process high-frequency signals, provide good performance, save battery energy and space resources, and be suitable for a variety of application environments and scenarios. Tunable bandpass filters (BPFs) can effectively reduce the volume, complexity and cost of communication systems, and have been the focus of research in recent years. However, the current mainstream tuning technologies, such as varactor diodes, PIN diodes and microelectromechanical systems (MEMS). However, the manufacturing process of tunable filters is usually incompatible with flexible substrates, and generally requires a large driving voltage, which limits the application of tunable filters.

[0009] The switching ratio of the flexible tuning device on the flexible substrate obtained by printing technology is relatively low, and the nanofabrication technology used to prepare the nanofabrication technology has high requirements for the environment and equipment; the cost of atomically thin two-dimensional materials is relatively high, and it is difficult to integrate them coplanar with the resonant circuit; for ferroelectric materials, although the preparation process of ferroelectric materials has undergone a series of improvements, it is still impossible to achieve the unity of low cost and high performance. In terms of ferroelectric materials, although the preparation process of ferroelectric materials has undergone a series of improvements, the requirements for the environment and equipment are still very harsh. These problems have greatly restricted the development of RF microwave devices in the field of flexible electronics.

[0010] There is an urgent need for a low-cost, high-on / off ratio tunable dual-mode flexible bandpass filter. Summary of the invention

[0011] The purpose of the present invention is to provide an organic electrochemical transistor tuned dual-mode flexible bandpass filter and a test method thereof to improve the test efficiency. The specific technical solution to achieve the purpose of the present invention is: A method for testing an organic electrochemical transistor-tuned dual-mode flexible bandpass filter comprises the following steps: (1) Design of organic electrochemical transistor-tuned dual-mode flexible bandpass filter; (2) Fabrication of organic electrochemical transistor-tuned dual-mode flexible bandpass filters; (3) The performance of the fabricated organic electrochemical transistor-tuned dual-mode flexible bandpass filter was tested under a series of different folding, bending, and curling conditions.

[0012] First, the organic electrochemical transistor-tuned dual-mode flexible bandpass filter with a completed structural design was prepared using the screen printing process. Then, in order to prove the feasibility of using this process to prepare a flexible bandpass filter, the performance of the flexible bandpass filter was tested and studied. Since the application environment of the flexible bandpass filter is changeable, only studying the performance of the filter in a straight or bent state cannot fully meet the application requirements of the flexible bandpass filter. Therefore, in addition to testing the straight and bent state of the flexible bandpass filter, its performance in a series of states such as folding, bending, and curling was also studied. Before formally manufacturing the organic electrochemical transistor-tuned dual-mode flexible bandpass filter, it was first designed and simulated according to the expected performance indicators.

[0013] Specifically, the process of step (1) above is as follows: (1-1) Using computer to simulate and design the organic electrochemical transistor-tuned dual-mode flexible bandpass filter, the theoretical structural size parameters of the flexible bandpass filter were obtained; (1-2) using a screen printing process to prepare the organic electrochemical transistor-tuned dual-mode flexible bandpass filter whose structure design has been completed in step (1); (1-3) The organic electrochemical transistor-tuned dual-mode flexible bandpass filter obtained in step (1-2) is subjected to an electrical performance test. If the test result deviates from the expected value, the parameters are adjusted and the process returns to step (1-1) and / or (1-2) to re-manufacture the organic electrochemical transistor-tuned dual-mode flexible bandpass filter. If the test result meets the expected value, the structural dimension parameters in steps (1-1) and (1-2) are fixed to prepare for the next step of mass production of the organic electrochemical transistor-tuned dual-mode flexible bandpass filter.

[0014] The specific process of step (2) above is as follows: (2-1) Printing a patterned silver nanoparticle ink on a flexible polyimide film using a screen printing technique to form the silver pattern designed in step (1); (2-2) curing the pattern obtained in step (2-1) at 100-150° C. for 2-10 minutes; (2-3) Repeat the above steps (2-1) and (2-2) multiple times; (2-4) Spin-coating the prepared flexible filter with PEDOT:PSS solution, and then annealing at 100~160℃ for 30~60 minutes; (2-5) using a clean cotton swab soaked in ethanol to perform patterning on the spin-coated layer obtained in step (2-4); (2-6) Organic electrochemical transistors were prepared by injecting ion gel between the gate and the channel as tuning units.

[0015] The specific process of step (3) above is as follows: (3-1) connecting the manufactured organic electrochemical transistor-tuned dual-mode flexible bandpass filter to a test instrument; (3-2) The organic electrochemical transistor-tuned dual-mode flexible bandpass filter is fixedly placed on a mechanical testing machine; (3-3) The performance of an organic electrochemical transistor-tuned dual-mode flexible bandpass filter was tested in a series of folding, bending, and curling states, and the changes in its electrical properties after multiple folding, bending, and curling were observed.

[0016] In particular, in step (2), by controlling the supply speed of the silver nanoparticle ink during manufacturing, the thickness of the silver nanoparticle ink gradually increases from the junction with the filter functional area to the outer edge of the lead-out end of the organic electrochemical transistor-tuned dual-mode flexible bandpass filter, that is, the thickness of the filter functional area is uniform, the thickness of the lead-out end at the junction with the filter functional area is the same, and the thickness gradually increases outwards.

[0017] Preferably, the thickness of the silver nanoparticle ink at the outer edge of the lead-out end is 2 to 3 times the thickness of the silver nanoparticle ink in the filter functional area.

[0018] Through this special design, when the flexible bandpass filter is subjected to bending, folding, twisting, etc., the interface stress tolerance zone between the silver metal layer and the polyimide film is transferred to the lead-out end, and presents a slow-changing trend. When the flexible bandpass filter is subjected to bending, folding, and twisting tests, the lead-out end is prevented from cracking, breaking, peeling off before the filter functional area, thus avoiding the inability to accurately and objectively test the mechanical properties of the flexible bandpass filter.

[0019] The design of gradually changing the thickness of the silver layer at the lead-out end also avoids the problem of sudden cracking or breakage of the filter lead-out end when bending, folding or twisting due to the gradual release of stress.

[0020] The thickness of the silver nanoparticle ink at the outer edge of the lead-out end is 2 to 3 times the thickness of the silver nanoparticle ink in the filter functional area. This preferred thickness design avoids the situation where the stress tolerance of the over-thick area becomes poor and it is more prone to breakage due to excessive thickness difference.

[0021] That is, if the difference between the thickness of the silver nanoparticle ink at the outer edge and the thickness of the silver nanoparticle ink in the filter functional area is too small, it will not work significantly, and if the difference is too large, it will make the edge of the lead end more prone to cracking. Through repeated tests, this optimal thickness configuration was obtained.

[0022] The present invention also provides a method for manufacturing an organic electrochemical transistor-tuned dual-mode flexible bandpass filter, comprising the following steps: (A) Silver nanoparticle ink is printed on a flexible polyimide film using screen printing technology to form a pre-designed silver pattern; (B) curing the pattern obtained in step (A) at 100-150° C. for 2-10 minutes; (C) Repeat the above steps (A) and (B) multiple times; (D) The prepared flexible filter was spin-coated with PEDOT:PSS solution and then annealed at 100-160°C for 30-60 minutes. (E) Patterning of the spin-coated layer obtained in step (D) using a clean cotton swab soaked in ethanol; (F) An organic electrochemical transistor was prepared by injecting ion gel between the gate and the channel as a tuning unit.

[0023] This invention was supported by the key project of Jiangsu Provincial Department of Education (23KJA510006, 22KJA510005). Beneficial effects of the present invention:

[0024] The present invention gradually increases the thickness of the silver metal film from the inner to the outer edge of the lead-out end of the organic electrochemical transistor-tuned dual-mode flexible bandpass filter connected to the filter functional area, and the thickness gradually increases from the thickness of the filter functional area to 2 to 3 times, and the interface stress tolerance area between the silver metal film layer and the polyimide film is gradually transferred to the lead-out end, and presents a slow-changing trend. When the flexible bandpass filter is subjected to bending, folding, and twisting tests, the lead-out end can be prevented from cracking, breaking, peeling, and other problems before the filter functional area, so that the mechanical properties of the flexible bandpass filter can be accurately, objectively, and completely tested during the entire test process, and the lead-out end can be prevented from being damaged before the mechanical properties of the filter are fully tested. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1: A structure of an organic electrochemical transistor-tuned dual-mode flexible bandpass filter.

[0026] Figure 2 : Regional partitioning of organic electrochemical transistor-tuned dual-mode flexible bandpass filters.

[0027] Figure 3 : Schematic diagram of the cross-sectional thickness distribution of the silver metal film for organic electrochemical transistor-tuned dual-mode flexible bandpass filter.

[0028] Figure 4 : Organic electrochemical transistor-tuned dual-mode flexible bandpass filter in the flat state.

[0029] Figure 5 : Measurement instrumentation connected to an organic electrochemical transistor-tuned dual-mode flexible bandpass filter.

[0030] Figure 6 : Organic electrochemical transistor-tuned dual-mode flexible bandpass filter in a bent state, with the convex surface on the left and the concave surface on the right.

[0031] Figure 7 : Normalized resistance of the channel at different bending angles. DETAILED DESCRIPTION

[0032] To facilitate understanding of the present invention, the technical solution of the present invention is specifically described below in conjunction with examples. Embodiment 1:

[0033] Computers were used to simulate and design the dual-mode flexible bandpass filter tuned by an organic electrochemical transistor, and the theoretical structural size parameters of the flexible bandpass filter were obtained. Specifically, the simulation of the dual-mode flexible bandpass filter tuned by an organic electrochemical transistor was performed using HFSS simulation software, which is based on the finite element method. The simulation model thickness of the polyimide substrate is 50.8 μm, and the dielectric constant is 3.5. The performance is optimized by optimizing the structural parameters through simulation. The structure of the dual-mode flexible bandpass filter tuned by an organic electrochemical transistor is shown in FIG. Figure 1 shown.

[0034] The organic electrochemical transistor-tuned dual-mode flexible bandpass filter whose structure design has been completed in the above steps is prepared by screen printing process; The designed organic electrochemical transistor-tuned dual-mode flexible bandpass filter is subjected to an electrical performance test. If the test result deviates from the expected value, the parameters are adjusted and the previous steps are returned to re-manufacture the organic electrochemical transistor-tuned dual-mode flexible bandpass filter. If the test result meets the expected value, the structural size parameters in the previous steps are fixed and preparation is made for the next step of mass production of the organic electrochemical transistor-tuned dual-mode flexible bandpass filter. Embodiment 2:

[0035] The embodiment is basically the same as the first embodiment. The difference is that the organic electrochemical transistor-tuned dual-mode flexible bandpass filter is divided into a filter functional area and a lead-out end. The filter functional area is the microwave working area of ​​the organic electrochemical transistor-tuned dual-mode flexible bandpass filter, and the lead-out end is used to connect the filter to the circuit, such as Figure 2 shown.

[0036] During screen printing, by controlling the supply of silver nanoparticle ink, the lead-out end of the organic electrochemical transistor-tuned dual-mode flexible bandpass filter gradually increases in thickness from the junction with the filter functional area to the outer edge, that is, the thickness of the filter functional area is uniform, the thickness of the lead-out end is the same at the junction with the filter functional area, and the thickness gradually increases outwards, such as Figure 3 shown.

[0037] Preferably, the thickness of the silver nanoparticle ink at the outer edge of the lead-out end is 2 to 3 times the thickness of the silver nanoparticle ink in the filter functional area. That is, the thickness of the silver metal film layer at the outer edge of the lead-out end is 2 to 3 times the thickness of the silver metal film layer in the filter functional area. Embodiment three:

[0038] It is basically the same as the second embodiment. The special feature is that the thickness of the silver metal film layer in the filter function area of ​​the organic electrochemical transistor tuned dual-mode flexible bandpass filter is 0.1 mm, and the thickness of the silver metal film layer at the lead-out end gradually increases from 0.1 mm to 0.25 mm at the outer edge. Embodiment 4:

[0039] A method for testing an organic electrochemical transistor-tuned dual-mode flexible bandpass filter comprises the following steps: Design of organic electrochemical transistor-tuned dual-mode flexible bandpass filter; Fabrication of organic electrochemical transistor-tuned dual-mode flexible bandpass filters; The performance of the fabricated organic electrochemical transistor-tuned dual-mode flexible bandpass filter was tested in a series of different folding, bending and curling states. Embodiment five:

[0040] A method for testing an organic electrochemical transistor-tuned dual-mode flexible bandpass filter comprises the following steps: The simulation of organic electrochemical transistor-tuned dual-mode flexible bandpass filter is carried out by HFSS simulation software, which is based on the finite element method. The performance is optimized by optimizing the structural parameters through simulation; Fabrication of organic electrochemical transistor-tuned dual-mode flexible bandpass filters; The performance of the fabricated organic electrochemical transistor-tuned dual-mode flexible bandpass filter was tested in a series of different folding, bending and curling states. Embodiment six:

[0041] A method for testing an organic electrochemical transistor-tuned dual-mode flexible bandpass filter comprises the following steps: Design of organic electrochemical transistor-tuned dual-mode flexible bandpass filter; Printing patterned silver nanoparticle ink on a flexible polyimide film using screen printing technology to form the organic electrochemical transistor-tuned dual-mode flexible bandpass filter designed in the above steps; The performance of the fabricated organic electrochemical transistor-tuned dual-mode flexible bandpass filter was tested in a series of different folding, bending and curling states. Embodiment seven:

[0042] A method for testing an organic electrochemical transistor-tuned dual-mode flexible bandpass filter comprises the following steps: Design of organic electrochemical transistor-tuned dual-mode flexible bandpass filter; Printing patterned silver nanoparticle ink on a flexible polyimide film using screen printing technology to form a designed silver pattern; The obtained pattern is solidified; Repeat the above steps several times; The prepared flexible filter was spin-coated with a PEDOT: PSS solution and then annealed; The resulting spin-coated layer was patterned using a clean cotton swab soaked in ethanol; An organic electrochemical transistor was prepared by injecting ion gel between the gate and the channel as a tuning unit; The performance of the fabricated organic electrochemical transistor-tuned dual-mode flexible bandpass filter was tested in a series of different folding, bending and curling states.

[0043] Preferably, the obtained pattern is cured at 100-150° C. for 2-10 minutes; Preferably, the annealing operation is: annealing at 100-160° C. for 30-60 minutes; Embodiment eight:

[0044] A method for testing an organic electrochemical transistor-tuned dual-mode flexible bandpass filter comprises the following steps: Design of organic electrochemical transistor-tuned dual-mode flexible bandpass filter; Printing patterned silver nanoparticle ink on a flexible polyimide film using screen printing technology to form the organic electrochemical transistor-tuned dual-mode flexible bandpass filter designed in the above steps; The manufactured organic electrochemical transistor-tuned dual-mode flexible bandpass filter is connected to a test instrument; The connected organic electrochemical transistor-tuned dual-mode flexible bandpass filter is fixedly placed on a mechanical testing machine; The performance of the organic electrochemical transistor-tuned dual-mode flexible bandpass filter was tested in a series of states of folding, bending and curling, and the changes in its electrical properties after multiple folding, bending and curling were observed. Embodiment nine:

[0045] A method for testing an organic electrochemical transistor-tuned dual-mode flexible bandpass filter comprises the following steps: Design of organic electrochemical transistor-tuned dual-mode flexible bandpass filter; Fabrication of organic electrochemical transistor-tuned dual-mode flexible bandpass filters; The manufactured organic electrochemical transistor-tuned dual-mode flexible bandpass filter is connected to a test instrument; The connected organic electrochemical transistor-tuned dual-mode flexible bandpass filter is fixedly placed on a mechanical testing machine; The performance of the organic electrochemical transistor-tuned dual-mode flexible bandpass filter was tested in a series of states of folding, bending and curling, and the changes in its electrical properties after multiple folding, bending and curling were observed. Embodiment ten:

[0046] For any one of the first to ninth embodiments, the return loss of the organic electrochemical transistor-tuned dual-mode flexible bandpass filter is measured by a vector network analyzer (VNA, Agilent E8363C). Figure 5 shown.

[0047] The vector network analyzer has many functions and is known as the "king of instruments". It is a multimeter in the RF and microwave field and is indispensable in microwave and RF circuit testing.

[0048] The main sources of error during measurement with a vector network analyzer are random error (internal noise), drift error (mainly temperature drift), and system error (the main source of error, including crosstalk, directionality of fixed coupling, etc.). There are three common error calibrations: SOLT (short / open / load / Thru), TRL, and electronic calibration. During the SOLT calibration process, an open circuit, a short circuit, a matched load, and a straight-through (isolation) are connected between the two ports for a total of seven operations. The network analyzer solves the error terms by itself; the microwave circuit of the electronic calibration is controlled by a PIN tube switch, and the calibration module can give the precise impedance of the test port, which can avoid errors in the calibration operation.

[0049] Embodiment eleven: A method for manufacturing an organic electrochemical transistor-tuned dual-mode flexible bandpass filter comprises the following steps: Design of organic electrochemical transistor-tuned dual-mode flexible bandpass filter; Fabrication of an organic electrochemical transistor-tuned dual-mode flexible bandpass filter.

[0050] Embodiment 12: A method for manufacturing an organic electrochemical transistor-tuned dual-mode flexible bandpass filter comprises the following steps: Design of organic electrochemical transistor-tuned dual-mode flexible bandpass filter; Fabrication of an organic electrochemical transistor-tuned dual-mode flexible bandpass filter using screen printing.

[0051] Embodiment 13: A method for manufacturing an organic electrochemical transistor-tuned dual-mode flexible bandpass filter comprises the following steps: Design of organic electrochemical transistor-tuned dual-mode flexible bandpass filter; The patterned silver nanoparticle ink was printed on a flexible polyimide film using screen printing technology to form a designed organic electrochemical transistor-tuned dual-mode flexible bandpass filter.

[0052] Embodiment 14: A method for manufacturing an organic electrochemical transistor-tuned dual-mode flexible bandpass filter comprises the following steps: Design of organic electrochemical transistor-tuned dual-mode flexible bandpass filter; The patterned silver nanoparticle ink is printed on a flexible polyimide film using screen printing technology to form a designed organic electrochemical transistor-tuned dual-mode flexible bandpass filter, specifically: The steps include: (A) Silver nanoparticle ink is printed on a flexible polyimide film using screen printing technology to form a pre-designed silver pattern; (B) curing the pattern obtained in step (A) at 100-150° C. for 2-10 minutes; (C) Repeat the above steps (A) and (B) multiple times; (D) The prepared flexible filter was spin-coated with PEDOT:PSS solution and then annealed at 100-160°C for 30-60 minutes. (E) Patterning of the spin-coated layer obtained in step (D) using a clean cotton swab soaked in ethanol; (F) An organic electrochemical transistor was prepared by injecting ion gel between the gate and the channel as a tuning unit.

[0053] Embodiment 15: The embodiment is basically the same as the thirteenth embodiment. The difference is that, during screen printing, by controlling the supply amount of the silver nanoparticle ink, the lead-out end of the organic electrochemical transistor tuned dual-mode flexible bandpass filter gradually increases in thickness from the junction with the filter functional area to the outer edge, that is, the thickness of the filter functional area is uniform, the thickness of the lead-out end is the same at the junction with the filter functional area, and the thickness gradually increases outward, such as Figure 3 shown.

[0054] Embodiment 16: It is basically the same as the first to fifteenth embodiments. The special features are: Silver nanoparticle ink (Sigma) was printed on a 125 μm flexible polyimide film using screen printing technology to form a specific silver trace pattern, and then cured at 130 °C for 5 min to obtain 1.1×107 S m −1 The conductivity of the substrate was obtained by screen printing, grinding, and repeated curing. The prepared flexible filter was spin-coated with PEDOT:PEDOT:PSS solution (500 rpm, 60 s, followed by annealing at 120°C for 30 min), and the spin-coated layer was patterned with a clean room cotton swab soaked in ethanol. Finally, an ion gel was injected between the gate and the channel to prepare an organic electrochemical transistor as a tuning unit.

[0055] Embodiment 17: It is basically the same as the first to fifteenth embodiments. The special features are: When patterning silver nanoparticle ink, on the designed filter, the source and drain width and length of the PEDOT: PSS film have been determined by experimental optimization, and the overall electrochemical activity is adjusted by changing its thickness t: After the PSS layer is dried, t is controlled by repeated spin coating. When the characteristic size of the filter is 2600 μm and 1000 μm, respectively, the channel resistance value Rs is as low as 1.6Ω after 7 repeated coating rotations.

[0056] Embodiment 18: For any one of Examples 1 to 9, the normalized resistance of the channel of the organic electrochemical transistor-tuned dual-mode flexible bandpass filter at different bending angles is measured, such as Figure 6 , 7 shown.

Claims

1. A test method for an organic electrochemical transistor-tuned dual-mode flexible bandpass filter, characterized in that: The test method includes the following steps: (1) Design of organic electrochemical transistor-tuned dual-mode flexible bandpass filter; (2) Fabrication of organic electrochemical transistor-tuned dual-mode flexible bandpass filters; (3) The performance of the fabricated organic electrochemical transistor-tuned dual-mode flexible bandpass filter was tested under a series of different folding, bending, and curling conditions.

2. A method for testing an organic electrochemical transistor-tuned dual-mode flexible bandpass filter, characterized in that: The test method includes the following steps: (1) Design of organic electrochemical transistor-tuned dual-mode flexible bandpass filter; The organic electrochemical transistor-tuned dual-mode flexible bandpass filter is divided into a filter functional area and a lead-out end. The filter functional area is the microwave working area of ​​the organic electrochemical transistor-tuned dual-mode flexible bandpass filter, and the lead-out end is used to connect the filter to a circuit. (2) Fabrication of organic electrochemical transistor-tuned dual-mode flexible bandpass filters; The lead-out end of the organic electrochemical transistor-tuned dual-mode flexible bandpass filter has a silver metal film layer whose thickness gradually increases from the junction with the filter functional area to the outer edge, that is, the thickness of the filter functional area is uniform, the thickness of the lead-out end is the same at the junction with the filter functional area, and the thickness gradually increases outwards; (3) The performance of the fabricated organic electrochemical transistor-tuned dual-mode flexible bandpass filter was tested under a series of different folding, bending, and curling conditions.

3. The method for testing the organic electrochemical transistor-tuned dual-mode flexible bandpass filter according to claim 2, characterized in that: The thickness of the silver metal film layer in the filter functional area of ​​the organic electrochemical transistor-tuned dual-mode flexible bandpass filter is 0.1 mm, and the thickness of the silver metal film layer at the lead-out end gradually increases from 0.1 mm to 0.25 mm at the outer edge.

4. The method for testing the organic electrochemical transistor-tuned dual-mode flexible bandpass filter according to claim 2 or 3, characterized in that: During screen printing, by controlling the supply of silver nanoparticle ink, the thickness of the silver nanoparticle ink gradually increases from the junction with the filter functional area to the outer edge of the lead-out end of the organic electrochemical transistor-tuned dual-mode flexible bandpass filter, that is, the thickness of the filter functional area is uniform, the thickness of the lead-out end is the same as the junction with the filter functional area, and the thickness gradually increases outward, so that: the interface stress tolerance area between the silver metal layer and the polyimide film is transferred to the lead-out end, and presents a slow change trend, and when the flexible bandpass filter is subjected to bending, folding, and twisting tests, the lead-out end is prevented from cracking, breaking, and peeling before the filter functional area.

5. A method for manufacturing an organic electrochemical transistor-tuned dual-mode flexible bandpass filter, characterized in that: The test method includes the following steps: (1) Design of organic electrochemical transistor-tuned dual-mode flexible bandpass filter; (2) Fabrication of organic electrochemical transistor-tuned dual-mode flexible bandpass filter.

6. A method for manufacturing an organic electrochemical transistor-tuned dual-mode flexible bandpass filter, characterized in that: The test method includes the following steps: (1) Design of organic electrochemical transistor-tuned dual-mode flexible bandpass filter; (2) Fabrication of organic electrochemical transistor-tuned dual-mode flexible bandpass filters, specifically: (2-1) Printing a patterned silver nanoparticle ink on a flexible polyimide film using a screen printing technique to form the silver pattern designed in step (1); (2-2) solidifying the pattern obtained in step (2-1); (2-3) Repeat the above steps (2-1) and (2-2) multiple times; (2-4) Spin coating the prepared flexible filter with a PEDOT:PSS solution and then annealing; (2-5) using a clean cotton swab soaked in ethanol to perform patterning on the spin-coated layer obtained in step (2-4); (2-6) Organic electrochemical transistors were prepared by injecting ion gel between the gate and the channel as tuning units.

7. The method for manufacturing an organic electrochemical transistor-tuned dual-mode flexible bandpass filter according to claim 6, characterized in that: The pattern obtained in step (2-1) is cured at 100-150° C. for 2-10 minutes.

8. The method for manufacturing an organic electrochemical transistor-tuned dual-mode flexible bandpass filter according to claim 6 or 7, characterized in that: In step (2-4), the pre-prepared flexible filter is spin-coated with a PEDOT: PSS solution and then annealed at 100-160° C. for 30-60 minutes.

9. The method for testing the organic electrochemical transistor-tuned dual-mode flexible bandpass filter according to any one of claims 1 to 4, characterized in that: The specific process of step (3) is as follows: (3-1) connecting the manufactured organic electrochemical transistor-tuned dual-mode flexible bandpass filter to a test instrument; (3-2) The organic electrochemical transistor-tuned dual-mode flexible bandpass filter is fixedly placed on a mechanical testing machine; (3-3) The performance of an organic electrochemical transistor-tuned dual-mode flexible bandpass filter was tested in a series of folding, bending, and curling states, and the changes in its electrical properties after multiple folding, bending, and curling were observed.

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