Die bonding method using wave-shaped fitting waves

Abstract

The embodiment of the invention provides a die bonding method using a wave-shaped fitting wave. The die bonding method comprises the following steps: configuring a first through hole, a second through hole, a third through hole, a first through hole and a second through hole on a die bonding device; the die bonding device sucks the first side, the third side and the fourth side of the wafer or the crystal grain through the first negative pressure, the second negative pressure and the third negative pressure respectively; the die bonding device moves the wafer or the crystal grain to the position above the substrate; the die bonding device blows and acts on the first side of the wafer or the crystal grain by means of the first positive pressure, the first side of the wafer or the crystal grain deflects and deforms to be in contact with the substrate, and a bonding wave is formed; and closing the first negative pressure, the second negative pressure and the third negative pressure in sequence from the first side of the die bonding device to the second side of the die bonding device, and simultaneously providing the second positive pressure in sequence from the first side of the die bonding device to the second side of the die bonding device.

Description

Technical Field

[0001] The invention relates to a crystal bonding method, in particular to a crystal bonding method using a wavy bonding wave. Background Art

[0002] The known die bonding device has an air hole or a pin disposed at its center, and the positive pressure blows toward the center of the wafer or die through the air hole and acts on the center of the wafer or die, or the pin moves toward the center of the wafer or die and acts on the center of the wafer or die, so that the center of the wafer or die is bent and deformed to contact the center of the substrate, and a bonding wave is formed. The bonding wave can gradually expand from the center of the wafer or die from the inside to the outside to the periphery of the wafer or die, so that the wafer or die gradually separates from the die bonding device and bonds to the substrate.

[0003] However, when the bonding wave extends to the end of the wafer or die, the negative pressure at the end of the die bonding device is likely to affect the expansion of the bonding wave, resulting in uneven diffusion of the bonding wave, and even forming bubbles between the end of the wafer or die and the end of the substrate, thereby causing the wafer or die to not be completely and tightly bonded to the substrate. Therefore, the subsequent processing procedures of the wafer or die are easily affected by the bubbles, reducing the yield of the products made by the subsequent processing.

[0004] Furthermore, before the bonding wave extends to the end of the wafer or die, because the pores at the end of the die-bonding device are more dispersed, the negative pressure at the end of the die-bonding device is weak, and it is easy to fail to absorb the end of the wafer or die, thereby causing the bonding wave to be destroyed and the wafer or die to fall down, and the wafer or die will collide with the substrate and be damaged.

[0005] The above problems are particularly evident when the size of the wafer or die is less than 12 inches. Summary of the invention

[0006] The main purpose of the present invention is to provide a die bonding method using a wave-shaped bonding wave, which can form a wave-shaped bonding wave by configuring the positions of through holes and through holes and the switching timing of positive and negative pressures.

[0007] Another object of the present invention is to provide a die bonding method using a wave-shaped bonding wave, wherein the end of the die bonding device can provide a strong negative pressure perpendicular to the bonding wave to stably absorb the end of the wafer or die.

[0008] In order to achieve the above-mentioned object, the present invention provides a die bonding method using a wave-shaped bonding wave, comprising the following steps:

[0009] (a) defining an axis passing through a first side, a center, and a second side of the die-bonding device as a first axis, and defining an axis passing through a third side, the center, and a fourth side of the die-bonding device as a second axis; disposing a plurality of first through holes between the first side of the die-bonding device and the second axis, and the plurality of first through holes are arranged along a first direction, wherein the first direction is parallel to the second axis; disposing a plurality of second through holes between the third side of the die-bonding device and the first axis and close to the third side of the die-bonding device, and the plurality of second through holes are arranged along a second direction, wherein the second direction is parallel to the first axis; disposing a plurality of third through holes between the fourth side of the die-bonding device and the first axis and close to the fourth side of the die-bonding device, and the plurality of third through holes are arranged along the second direction; disposing a plurality of first through holes between the first side of the die-bonding device and the plurality of first through holes, and the plurality of first through holes are arranged along the first direction; and disposing a plurality of second through holes on the die-bonding device along the first axis;

[0010] (b) the plurality of first through holes provide a first negative pressure, and the die-bonding device absorbs a first side of a wafer or a die by the first negative pressure; the plurality of second through holes provide a second negative pressure, and the die-bonding device absorbs a third side of the wafer or the die by the second negative pressure; and the plurality of third through holes provide a third negative pressure, and the die-bonding device absorbs a fourth side of the wafer or the die by the third negative pressure;

[0011] (c) the die bonding device moves the wafer or the die to a substrate;

[0012] (d) the plurality of first through holes provide a first positive pressure, and the die bonding device blows the first side of the wafer or the die with the first positive pressure and acts on the first side of the wafer or the die, so that the first side of the wafer or the die is bent and deformed to contact the substrate, and a bonding wave is formed; and

[0013] (e) the plurality of first through holes, the plurality of second through holes and the plurality of third through holes sequentially close the first negative pressure, the second negative pressure and the third negative pressure from the first side of the die-bonding device toward the second side of the die-bonding device, and at the same time the plurality of second through holes sequentially provide a second positive pressure from the first side of the die-bonding device toward the second side of the die-bonding device; and the die-bonding device sequentially blows the first side, a center and a second side of the wafer or the die along the first axis by the second positive pressure and sequentially acts on the first side, the center and the second side of the wafer or the die, so that a contact line of the bonding wave gradually expands from the first side of the wafer or the die toward the second side of the wafer or the die, the degree of flexural deformation of the wafer or the die gradually increases, and a contact area between the wafer or the die and the substrate gradually increases.

[0014] In some embodiments, step (a) further includes: the plurality of first through holes are linearly arranged in at least one row along the first direction.

[0015] In some embodiments, step (a) further includes: at least one of the plurality of first through holes is disposed between the third side of the die-bonding device and the first axis, and the remaining first through holes are disposed between the fourth side of the die-bonding device and the first axis.

[0016] In some embodiments, step (a) further includes: the plurality of second through holes are arranged in at least one row in an arc shape along the second direction, the plurality of third through holes are arranged in at least one row in an arc shape along the second direction, and the plurality of second through holes and the plurality of third through holes are configured on a circumference of at least one concentric circle.

[0017] In some embodiments, step (a) further includes: the plurality of first perforations are linearly arranged in at least one row along the first direction.

[0018] In some embodiments, step (a) further includes: configuring a plurality of grooves between the second side of the die-bonding device and the second axis and close to the second side of the die-bonding device; and configuring a plurality of fourth through holes in the plurality of grooves; wherein, step (b) further includes: the plurality of fourth through holes provide a fourth negative pressure, and the die-bonding device absorbs the second side of the wafer or the die through the plurality of grooves by means of the fourth negative pressure; wherein, after step (e), it further includes: (f) the plurality of fourth through holes sequentially close the fourth negative pressure from the center of the die-bonding device toward the second side of the die-bonding device, so that the contact line of the bonding wave can sequentially cross the plurality of grooves in a direction parallel to the second axis, and the second side of the wafer or the die gradually detaches from the second side of the die-bonding device until the wafer or the die is completely bonded to the substrate.

[0019] In some embodiments, step (a) further includes: the plurality of grooves extending linearly along the second direction.

[0020] In some embodiments, step (d) further includes: the pressure of the first positive pressure gradually increases so that the contact line of the bonding wave crosses the multiple first perforations, the degree of flexural deformation of the wafer or the grain gradually increases, and the contact area between the wafer or the grain and the substrate gradually increases.

[0021] In some embodiments, step (e) further comprises: the pressure of the second positive pressure is equal to the pressure after the first positive pressure is increased.

[0022] In some embodiments, step (e) further includes: the first plurality of through holes synchronously close the first negative pressure, and at the same time, one of the second plurality of through holes provides the second positive pressure, so that the contact line of the bonding wave crosses the first plurality of through holes and one of the second plurality of through holes, the degree of deflection of the wafer or the die gradually increases, and the contact area between the wafer or the die and the substrate gradually increases; and the second plurality of through holes sequentially close the second negative pressure from the first side of the die-bonding device to the second side of the die-bonding device, the third plurality of through holes sequentially close the third negative pressure from the first side of the die-bonding device to the second side of the die-bonding device, and at the same time, the remaining second through holes sequentially provide the second positive pressure from the first side of the die-bonding device to the second side of the die-bonding device, so that the contact line of the bonding wave sequentially crosses the second plurality of through holes, the third plurality of through holes and the remaining second through holes, the degree of deflection of the wafer or the die gradually increases, and the contact area between the wafer or the die and the substrate gradually increases.

[0023] The effect of the present invention is that the die bonding method of the present invention can form a wave-shaped bonding wave by configuring the positions of the through holes and the perforations and the switching timing of the positive and negative pressures. Thereby, the control area of ​​the die bonding device is increased, and the wave-shaped bonding wave can be evenly diffused, so that the wafer or the die can slowly detach from the die bonding device and be tightly bonded to the substrate without generating any bubbles.

[0024] Furthermore, before the bonding wave extends to the second side of the wafer or the die, the bonding method of the present invention can extend the fourth negative pressure from the third side to the fourth side of the bonding device through the multiple grooves, providing a stronger fourth negative pressure perpendicular to the bonding wave to stably absorb the second side of the wafer or the die, thereby avoiding the bonding wave from being destroyed and preventing the wafer or the die from falling down, and the wafer or the die will not collide with the substrate and be damaged. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 is a flow chart of the method of the present invention.

[0026] Figure 2 It is a bottom view of step S10 of the method of the present invention.

[0027] Figure 3A is a side view of step S20 of the method of the present invention.

[0028] Figure 3B It is a bottom view of step S20 of the method of the present invention.

[0029] Figure 4 is a side view of step S30 of the method of the present invention.

[0030] Figure 5A is a side view of step S40 of the method of the present invention.

[0031] FIG. 5B to FIG. 5D It is a bottom view of step S40 of the method of the present invention.

[0032] FIG. 6A to FIG. 6J It is a bottom view of step S50 of the method of the present invention.

[0033] 7A to 7D It is a bottom view of step S60 of the method of the present invention.

[0034] Explanation of symbols:

[0035] 10: Die bonding device

[0036] 11: First side

[0037] 12: Second side

[0038] 13: Third side

[0039] 14: Fourth side

[0040] 15: Center

[0041] 16: First Axis

[0042] 17: Second Axis

[0043] 21-24: First through hole

[0044] 31~35: Second through hole

[0045] 41~45: The third through hole

[0046] 51~53: Groove

[0047] 60: Fourth through hole

[0048] 71-73: First perforation

[0049] 81~85: Second perforation

[0050] 91: First negative pressure

[0051] 92: Second negative pressure

[0052] 93: The third negative pressure

[0053] 94: Fourth negative pressure

[0054] 95: First positive pressure

[0055] 96: Second positive pressure

[0056] 100: Wafer

[0057] 200:Substrate

[0058] 300: Fit wave

[0059] 310: Contact line

[0060] D1: First direction

[0061] D2: Second direction

[0062] S10~S60: Steps DETAILED DESCRIPTION

[0063] The following is a more detailed description of the embodiments of the present invention with the help of drawings and component symbols, so that those skilled in the art can implement the embodiments according to the embodiments after reading the specification.

[0064] Figure 1 is a flow chart of the method of the present invention. Figure 2 It is a bottom view of step S10 of the method of the present invention. Figure 3A is a side view of step S20 of the method of the present invention. Figure 3BIt is a bottom view of step S20 of the method of the present invention. Figure 4 is a side view of step S30 of the method of the present invention. FIG. 5B to FIG. 5D It is a bottom view of step S40 of the method of the present invention. FIG. 6A to FIG. 6J It is a bottom view of step S50 of the method of the present invention. 7A to 7D The present invention provides a die bonding method using a wave-shaped bonding wave, comprising the following steps:

[0065] Step S10, as Figure 1 and Figure 2 As shown, an axis passing through a first side 11, a center 15, and a second side 12 of the die-bonding device 10 is defined as a first axis 16, and an axis passing through a third side 13, a center 15, and a fourth side 14 of the die-bonding device 10 is defined as a second axis 17; a plurality of first through holes 21-24 are disposed between the first side 11 of the die-bonding device 10 and the second axis 17, and the plurality of first through holes 21-24 are linearly arranged in a row along a first direction D1, wherein the first direction D1 is parallel to the second axis 17, wherein the plurality of first through holes 21, 22 are arranged between the third side 13 of the die bonding device 10 and the first axis 16, and the plurality of first through holes 23, 24 are arranged between the fourth side 14 of the die bonding device 10 and the first axis 16; the plurality of second through holes 31-35 are arranged between the third side 13 of the die bonding device 10 and the first axis 16 and close to the third side 13 of the die bonding device 10, and the plurality of second through holes 31-35 are arranged in a row in an arc shape along a second direction D2, wherein the second The direction D2 is parallel to the first axis 16; the plurality of third through holes 41-45 are arranged between the fourth side 14 of the solid crystal device 10 and the first axis 16 and close to the fourth side 14 of the solid crystal device 10, and the plurality of third through holes 41-45 are arranged in an arc in a row along the second direction D2, and the plurality of second through holes 31-35 and the plurality of third through holes 41-45 are arranged on a circumference of a concentric circle; the plurality of grooves 51-53 are arranged between the second side 12 of the solid crystal device 10 and the second axis 17 and The second side 12 of the solid crystal device 10 is close to the second side 12, and the plurality of grooves 51-53 extend linearly along the second direction D2; a plurality of fourth through holes 60 are arranged in the plurality of grooves 51-53; a plurality of first through holes 71-73 are arranged between the first side 11 of the solid crystal device 10 and the plurality of first through holes 21-24, and the plurality of first through holes 71-73 are arranged in a row linearly along the first direction D1; and a plurality of second through holes 81-85 are arranged on the solid crystal device 10 along the first axis 16.

[0066] Step S20, as Figure 1 , Figure 3A and Figure 3BAs shown, the multiple first through holes 21~24 provide a first negative pressure 91, and the solid crystal device 10 absorbs a first side of the wafer 100 by the first negative pressure 91; the multiple second through holes 31~35 provide a second negative pressure 92, and the solid crystal device 10 absorbs a third side of the wafer 100 by the second negative pressure 92; the multiple third through holes 41~45 provide a third negative pressure 93, and the solid crystal device 10 absorbs a fourth side of the wafer 100 by the third negative pressure 93; and the multiple fourth through holes 60 provide a fourth negative pressure 94, and the solid crystal device 10 absorbs the second side of the wafer 100 through the multiple grooves 51~53 by the fourth negative pressure 94.

[0067] Step S30, as Figure 1 and Figure 4 As shown, the die bonding device 10 moves the wafer 100 to above a substrate 200 .

[0068] Step S40, as Figure 1 , Figure 5A and Figure 5B As shown, the plurality of first through holes 71-73 provide a first positive pressure 95, and the die bonding device 10 blows the first side of the wafer 100 and acts on the first side of the wafer 100 by the first positive pressure 95, so that the first side of the wafer 100 is bent and deformed to contact the substrate 200, and a bonding wave 300 is formed; and Figure 5B , Figure 5C and Figure 5D As shown, the pressure of the first positive pressure 95 gradually increases (the increase in thickness of the dotted line in the figure represents the pressure increase), so that a contact line 310 of the bonding wave 300 crosses the multiple first perforations 71~73, the degree of flexural deformation of the wafer 100 gradually increases (not shown in the figure), and a contact area between the wafer 100 and the substrate 200 gradually increases (not shown in the figure).

[0069] Step S50, as Figure 1 and Fig. 6A As shown, the plurality of first through holes 21-24 simultaneously close the first negative pressure 91, and the second through hole 81 provides a second positive pressure 96, the pressure of the second positive pressure 96 is equal to the pressure after the first positive pressure 95 rises (see Fig. 6A The thickness of the dotted line is such that the contact line 310 of the bonding wave 300 crosses the plurality of first through holes 21-24 and the second through hole 81, the degree of deflection of the wafer 100 gradually increases (not shown), and the contact area between the wafer 100 and the substrate 200 gradually increases (not shown); and Figure 1 and FIG. 6A to FIG. 6JThe plurality of second through holes 31-35 sequentially close the second negative pressure 92 from the first side 11 of the die bonding device 10 to the second side 12 of the die bonding device 10, the plurality of third through holes 41-45 sequentially close the third negative pressure 93 from the first side 11 of the die bonding device 10 to the second side 12 of the die bonding device 10, and the remaining second through holes 82-85 sequentially provide a second positive pressure 96 from the first side 11 of the die bonding device 10 to the second side 12 of the die bonding device 10; and the die bonding device 10 is moved along the first axis 1 by the second positive pressure 96. 6 blows sequentially on a first side, a center and a second side of the wafer 100 and acts sequentially on the first side, the center and the second side of the wafer 100, so that the contact line 310 of the bonding wave 300 gradually expands from the first side of the wafer 100 toward the second side of the wafer 100 and sequentially crosses the plurality of second through holes 31-35, the plurality of third through holes 41-45 and the remaining second through holes 82-85, the degree of flexural deformation of the wafer 100 gradually increases (not shown), and the contact area between the wafer 100 and the substrate 200 gradually increases (not shown).

[0070] Step S60, as Figure 1 and 7A to 7D As shown, the plurality of fourth through holes 60 sequentially close the fourth negative pressure 94 from the center of the die-bonding device 10 toward the second side 12 of the die-bonding device 10, so that the contact line 310 of the bonding wave 300 can sequentially cross the plurality of grooves 51 to 53 in a direction parallel to the second axis 17, and the second side of the wafer 100 gradually separates from the second side 12 of the die-bonding device 10 until the wafer 100 is completely bonded to the substrate 200.

[0071] In some embodiments, the wafer 100 may also be replaced by a die. When the wafer 100 is attached to the substrate 200, the substrate 200 may be a wafer. When the die is attached to the substrate 200, the substrate 200 may be a wafer or a die.

[0072] In summary, the die bonding method of the present invention can form a wavy bonding wave 300 by means of the configuration positions of the plurality of first through holes 21-24, the plurality of second through holes 31-35, the plurality of third through holes 41-45, the plurality of first through holes 71-73 and the plurality of second through holes 81-85 and the switching timing of positive and negative pressures. In this way, the control area of ​​the die bonding device 10 is increased, and the wavy bonding wave 300 can be evenly diffused, so that the wafer 100 or the die can slowly detach from the die bonding device 10 and fit tightly on the substrate 200 without generating any bubbles. The subsequent processing procedures of the wafer 100 or the die will not be affected by the bubbles, thereby improving the yield rate of the products made by the subsequent processing.

[0073] Furthermore, before the bonding wave 300 extends to the second side of the wafer 100 or the die, the bonding method of the present invention can extend the fourth negative pressure 94 from the third side 13 of the bonding device 10 to the fourth side 14 through the multiple grooves 51-53, providing a stronger fourth negative pressure 94 perpendicular to the bonding wave 300 to stably absorb the second side of the wafer 100 or the die, thereby avoiding the bonding wave 300 from being damaged and preventing the wafer 100 or the die from falling down, and the wafer 100 or the die will not collide with the substrate 200 and be damaged.

[0074] In addition, because the plurality of grooves 51-53 are close to the second side 12 of the die bonding device 10, the plurality of grooves 51-53 are spaced relatively short and are relatively close to each other. Therefore, the die bonding device 10 can accurately control the contact line 310 of the bonding wave 300 to sequentially cross the plurality of grooves 51-53 in a direction parallel to the second axis 17, thereby preventing the bonding wave 300 from being damaged and preventing the wafer 100 or the die from falling down, so that the wafer 100 or the die will not collide with the substrate 200 and be damaged.

[0075] It is worth mentioning that, based on the above effects, the die bonding method of the present invention is quite suitable for application to wafers 100 or dies with a size below 12 inches.

[0076] The above description is only used to explain the preferred embodiments of the present invention, and is not intended to limit the present invention in any form. Therefore, any modifications or changes made to the present invention under the same inventive spirit should still be included in the scope of protection intended by the present invention.

Claims

1. A die bonding method using a wave-shaped bonding wave, characterized in that: The following steps are involved: (a) defining an axis passing through a first side, a center, and a second side of a die-bonding device as a first axis, and defining an axis passing through a third side, the center, and a fourth side of the die-bonding device as a second axis; disposing a plurality of first through holes between the first side of the die-bonding device and the second axis, and the plurality of first through holes are arranged along a first direction, wherein the first direction is parallel to the second axis; disposing a plurality of second through holes between the third side of the die-bonding device and the first axis and close to the third side of the die-bonding device, and the plurality of second through holes are arranged along a second direction, wherein the second direction is parallel to the first axis; disposing a plurality of third through holes between the fourth side of the die-bonding device and the first axis and close to the fourth side of the die-bonding device, and the plurality of third through holes are arranged along the second direction; disposing a plurality of first through holes between the first side of the die-bonding device and the plurality of first through holes, and the plurality of first through holes are arranged along the first direction; and disposing a plurality of second through holes on the die-bonding device along the first axis; (b) the plurality of first through holes provide a first negative pressure, and the die-bonding device absorbs a first side of a wafer or a die by the first negative pressure; the plurality of second through holes provide a second negative pressure, and the die-bonding device absorbs a third side of the wafer or the die by the second negative pressure; and the plurality of third through holes provide a third negative pressure, and the die-bonding device absorbs a fourth side of the wafer or the die by the third negative pressure; (c) the die bonding device moves the wafer or the die to a substrate; (d) the plurality of first through holes provide a first positive pressure, and the die bonding device blows the first side of the wafer or the die with the first positive pressure and acts on the first side of the wafer or the die, so that the first side of the wafer or the die is bent and deformed to contact the substrate, and a bonding wave is formed; and (e) the plurality of first through holes, the plurality of second through holes and the plurality of third through holes sequentially close the first negative pressure, the second negative pressure and the third negative pressure from the first side of the die-bonding device toward the second side of the die-bonding device, and at the same time the plurality of second through holes sequentially provide a second positive pressure from the first side of the die-bonding device toward the second side of the die-bonding device; and the die-bonding device sequentially blows the first side, a center and a second side of the wafer or the die along the first axis by the second positive pressure and sequentially acts on the first side, the center and the second side of the wafer or the die, so that a contact line of the bonding wave gradually expands from the first side of the wafer or the die toward the second side of the wafer or the die, the degree of flexural deformation of the wafer or the die gradually increases, and a contact area between the wafer or the die and the substrate gradually increases.

2. The die bonding method using a wave-shaped bonding wave according to claim 1, characterized in that: Step (a) further includes: the plurality of first through holes are linearly arranged in at least one row along the first direction.

3. The die bonding method using a wave-shaped bonding wave according to claim 1, characterized in that: Step (a) further includes: at least one of the plurality of first through holes is disposed between the third side of the die-bonding device and the first axis, and the remaining first through holes are disposed between the fourth side of the die-bonding device and the first axis.

4. The die bonding method using a wave-shaped bonding wave according to claim 1, characterized in that: Step (a) further includes: the plurality of second through holes are arranged in at least one row in an arc shape along the second direction, the plurality of third through holes are arranged in at least one row in an arc shape along the second direction, and the plurality of second through holes and the plurality of third through holes are arranged on a circumference of at least one concentric circle.

5. The die bonding method using a wave-shaped bonding wave according to claim 1, characterized in that: Step (a) further includes: the plurality of first perforations are linearly arranged in at least one row along the first direction.

6. The die bonding method using a wave-shaped bonding wave according to claim 1, characterized in that: Step (a) further includes: configuring a plurality of grooves between the second side of the die-bonding device and the second axis and close to the second side of the die-bonding device; and configuring a plurality of fourth through holes in the plurality of grooves; wherein, step (b) further includes: the plurality of fourth through holes provide a fourth negative pressure, and the die-bonding device absorbs the second side of the wafer or the die through the plurality of grooves by means of the fourth negative pressure; wherein, after step (e), it further includes: (f) the plurality of fourth through holes sequentially close the fourth negative pressure from the center of the die-bonding device toward the second side of the die-bonding device, so that the contact line of the bonding wave can sequentially cross the plurality of grooves in a direction parallel to the second axis, and the second side of the wafer or the die gradually detaches from the second side of the die-bonding device until the wafer or the die is completely bonded to the substrate.

7. The die bonding method using a wave-shaped bonding wave according to claim 6, characterized in that: Step (a) further includes: the plurality of grooves extending linearly along the second direction.

8. The die bonding method using a wave-shaped bonding wave according to claim 1, characterized in that: Step (d) further includes: the pressure of the first positive pressure gradually increases so that the contact line of the bonding wave crosses the multiple first perforations, the degree of flexural deformation of the wafer or the grain gradually increases, and the contact area between the wafer or the grain and the substrate gradually increases.

9. The die bonding method using a wave-shaped bonding wave according to claim 8, characterized in that: Step (e) further includes: the pressure of the second positive pressure is equal to the pressure after the first positive pressure is increased.

10. The die bonding method using a wave-shaped bonding wave according to claim 1, characterized in that: Step (e) further includes: the first plurality of through holes synchronously close the first negative pressure, and at the same time, one of the second plurality of through holes provides the second positive pressure, so that the contact line of the bonding wave crosses the first plurality of through holes and one of the second plurality of through holes, the degree of deflection of the wafer or the grain gradually increases, and the contact area between the wafer or the grain and the substrate gradually increases; and the second plurality of through holes sequentially close the second negative pressure from the first side of the die-bonding device to the second side of the die-bonding device, the third plurality of through holes sequentially close the third negative pressure from the first side of the die-bonding device to the second side of the die-bonding device, and at the same time, the remaining second through holes sequentially provide the second positive pressure from the first side of the die-bonding device to the second side of the die-bonding device, so that the contact line of the bonding wave sequentially crosses the second plurality of through holes, the third plurality of through holes and the remaining second through holes, the degree of deflection of the wafer or the grain gradually increases, and the contact area between the wafer or the grain and the substrate gradually increases.

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