Light-emitting diode, light-emitting diode preparation method and display device

Abstract

The invention provides a light-emitting diode, a light-emitting diode preparation method and a display device. The light emitting diode comprises a first buffer layer, a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially stacked, wherein the first buffer layer comprises a plurality of first sub-layers and second sub-layers which are periodically and alternately stacked. Wherein the first sub-layer is a TiO2 sub-layer, the second sub-layer is an AlN sub-layer, TiO2 and AlN are intrinsic layers and are in a high-resistance state, leakage current can be reduced, and the working stability of the device is improved. The TiO2 and the AlN have a refractive index difference, and the first sub-layer and the second sub-layer are periodically configured, so that effective reflection of light of an internal light path can be realized and the luminous efficiency can be improved due to the fact that the refractive index difference exists between the first sub-layer and the second sub-layer and the materials are periodically configured.

Description

Technical Field

[0001] The present disclosure relates to the field of light-emitting devices, and in particular to a light-emitting diode, a method for preparing the light-emitting diode, and a display device. Background Art

[0002] Light Emitting Diode (LED) is a semiconductor device that can emit light. It has been widely used in the display and lighting markets due to its advantages such as energy saving, high brightness, high durability, long life and light weight.

[0003] The related art provides a light emitting diode, the light emitting diode structure includes a first semiconductor layer, an active layer and a second semiconductor layer.

[0004] The light-emitting diodes provided by the related art have problems of low stability and low light-emitting efficiency. Summary of the invention

[0005] The embodiments of the present disclosure provide a light emitting diode, a method for manufacturing a light emitting diode, and a display device, which improve leakage current, increase reflectivity, and thus improve the stability and luminous efficiency of the light emitting diode. The technical solution is as follows:

[0006] In one aspect, a light-emitting diode is provided, comprising: a first buffer layer, a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence, wherein the first buffer layer comprises a plurality of first sublayers and second sublayers stacked alternately in a periodic manner, and the first sublayer is TiO 2 Sublayer, the second sublayer is an AlN sublayer.

[0007] Optionally, a stacking period of the first sublayer and the second sublayer is 2-10.

[0008] Optionally, the first sublayer has a thickness of 20 to 50 nm, and the second sublayer has a thickness of 30 to 60 nm.

[0009] Optionally, the light emitting diode further comprises: a second buffer layer located between the first buffer layer and the first semiconductor layer;

[0010] The second buffer layer is an AlN layer.

[0011] Optionally, the second buffer layer has a thickness of 50-100 nm.

[0012] Optionally, the light emitting diode further comprises: a substrate and a third buffer layer located between the substrate and the first buffer layer;

[0013] The third buffer layer is an AlN layer.

[0014] Optionally, the third buffer layer has a thickness of 20-30 nm.

[0015] In another aspect, a method for preparing a light emitting diode comprises:

[0016] A first buffer layer is prepared, wherein the first buffer layer is a first sublayer and a second sublayer that are alternately stacked in a plurality of periods, and the first buffer layer includes a first sublayer and a second sublayer that are alternately stacked in a plurality of periods, and the first sublayer is TiO 2 sublayer, the second sublayer is an AlN sublayer;

[0017] forming a first semiconductor layer on the first buffer layer;

[0018] forming an active layer on the first semiconductor layer;

[0019] A second semiconductor layer is formed on the active layer.

[0020] Optionally, the method further comprises:

[0021] Growing a third buffer layer on the substrate, wherein the third buffer layer is located between the substrate and the first buffer layer, and the third buffer layer is an AlN layer;

[0022] A second buffer layer is grown between the first buffer layer and the first semiconductor layer, and the second buffer layer is an AlN layer.

[0023] On the other hand, a display panel is provided. The display panel includes pixel units distributed in an array. The pixel units include the light emitting diode structure.

[0024] The technical solution provided by the embodiments of the present disclosure has the following beneficial effects:

[0025] In the embodiment of the present disclosure, the light emitting diode includes a first buffer layer, a first semiconductor layer, an active layer, and a second semiconductor layer. The first buffer layer includes a plurality of first sublayers and second sublayers alternately stacked in a periodic manner. The first sublayer is TiO 2 sublayer, the second sublayer is AlN sublayer, TiO 2 Both TiO and AlN are intrinsic layers, in a high-resistance state, which can reduce leakage current and improve the stability of device operation. 2 There is a refractive index difference between AlN and the first sublayer, and since the first sublayer and the second sublayer are periodically configured, this material has a refractive index difference and a periodic configuration, which can achieve effective reflection of light in the internal optical path and improve luminous efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0027] Figure 1 is a structural schematic diagram of a light emitting diode provided by an embodiment of the present disclosure;

[0028] Figure 2 is a schematic diagram of a first buffer layer structure provided by an embodiment of the present disclosure;

[0029] Figure 3 is a schematic structural diagram of another light emitting diode provided by an embodiment of the present disclosure;

[0030] Figure 4 is a structural schematic diagram of a display panel provided by an embodiment of the present disclosure;

[0031] Figure 5 is a flow chart of a method for preparing a light emitting diode provided by an embodiment of the present disclosure;

[0032] Figure 6 is a flow chart of another method for preparing a light emitting diode provided by an embodiment of the present disclosure;

[0033] Figure 7 It is a line graph of the reflectivity of the light-emitting diode provided by the embodiment of the present disclosure at different wavelengths.

[0034] The reference numerals are as follows:

[0035] 100: substrate; 201: first buffer layer; 202: second buffer layer; 203: first semiconductor layer; 204: active layer; 205: second semiconductor layer; 206: third buffer layer; 207: AlGaN transition layer; 208: electron blocking layer; 209: P-type contact layer; 301: first sublayer; 302: second sublayer; 200: pixel unit. DETAILED DESCRIPTION

[0036] In order to make the objectives, technical solutions and advantages of the present disclosure more clear, the embodiments of the present disclosure will be further described in detail below with reference to the accompanying drawings.

[0037] Figure 1 is a schematic diagram of the structure of a light emitting diode provided by an embodiment of the present disclosure. Figure 1 The light emitting diode includes: a first buffer layer 201, a first semiconductor layer 203, an active layer 204 and a second semiconductor layer 205 which are stacked in sequence.

[0038] Figure 2 Schematic diagram of a first buffer layer structure provided by an embodiment of the present disclosure. Figure 2 As shown, the first buffer layer 201 includes a plurality of first sub-layers 301 and second sub-layers 302 alternately stacked periodically, wherein the first sub-layer 301 is TiO 2 Sublayer, the second sublayer 302 is an AlN sublayer.

[0039] In the embodiment of the present disclosure, the light emitting diode includes a first buffer layer, a first semiconductor layer, an active layer, and a second semiconductor layer. The first buffer layer includes a plurality of first sublayers and second sublayers alternately stacked in a periodic manner. The first sublayer is TiO 2 sublayer, the second sublayer is AlN sublayer, TiO 2 Both TiO and AlN are intrinsic layers, in a high-resistance state, which can reduce leakage current and improve the stability of device operation. 2 There is a refractive index difference between TiO 2 The refractive index is 2.2-2.4, and the refractive index of AlN is 1.9-2.05. ), and because the first sublayer and the second sublayer are periodically configured, this material has a refractive index difference and a periodic configuration, which can achieve effective reflection of the light in the internal light path and improve the luminous efficiency.

[0040] In the embodiment of the present disclosure, the stacking period of the first sub-layer 301 and the second sub-layer 302 may be 2 to 10.

[0041] Exemplarily, the stacking period of the first sub-layer 301 and the second sub-layer 302 is 5.

[0042] In this implementation, the first sublayer 301 and the second sublayer 302 are stacked in the above-mentioned period. On the one hand, it can play a role in sufficiently avoiding leakage current and improving reflectivity. On the other hand, too many periods will not cause the thickness of the entire light emitting diode to be too large.

[0043] In the embodiment of the present disclosure, the thickness of a single first sublayer 301 may be 20-50 nm, and the thickness of a single second sublayer 302 may be 30-60 nm.

[0044] Exemplarily, the thickness of the first sublayer 301 is 30 nm, and the thickness of the second sublayer 302 is 50 nm.

[0045] In this implementation, the first sublayer and the second sublayer of the above-mentioned thickness are used, so that the first sublayer and the second sublayer have sufficient thickness to avoid leakage current, and the above-mentioned thickness can ensure that the refractive index difference between the first sublayer and the second sublayer can emit as much light as possible; in addition, the above-mentioned thickness will not cause the thickness of the entire light-emitting diode to be too large.

[0046] In the embodiment of the present disclosure, the epitaxial structure formed by the first semiconductor layer 203, the active layer 204 and the second semiconductor layer 205 may be a GaN-based epitaxial structure; in other embodiments, the epitaxial structure formed by the first semiconductor layer 203, the active layer 204 and the second semiconductor layer 205 may be a GaAs-based epitaxial structure.

[0047] In the embodiment of the present disclosure, the active layer 204 may be a multi-quantum well layer, such as an InGaN / GaN multi-quantum well structure.

[0048] In a possible implementation of the present disclosure, the first semiconductor layer 203 is an N-type semiconductor layer, and the second semiconductor layer 205 is a P-type semiconductor layer.

[0049] For example, the first semiconductor layer 203 may be an N-type GaN layer, and the second semiconductor layer 205 may be a P-type GaN layer.

[0050] In another possible implementation, the first semiconductor layer 203 is a P-type semiconductor layer, and the second semiconductor layer 205 is an N-type semiconductor layer.

[0051] For example, the first semiconductor layer 203 may be a P-type GaN layer, and the second semiconductor layer 205 may be an N-type GaN layer.

[0052] See also Figure 1 The light emitting diode may further include a substrate 100, and the substrate 100 may be a Si substrate.

[0053] In the embodiment of the present disclosure, the light emitting diode further includes: a second buffer layer 202 located between the first buffer layer 201 and the first semiconductor layer 203. The second buffer layer 202 may be an AlN layer.

[0054] In this implementation, the growth of the AlN sublayer in the first buffer layer realizes the basis of the hexagonal lattice, so that the AlN crystal quality of the second buffer layer is improved, and the substrate is transformed into a hexagonal lattice crystal structure through the first buffer layer and the second buffer layer, providing a good foundation for subsequent GaN epitaxy, so that the GaN epitaxy has a good atomic arrangement and a smooth surface. In addition, the first buffer layer and the second buffer layer are in a compressive stress state, and the compressive stress range is 0.3-1.5GPa, which plays an important role in the subsequent epitaxial stress regulation.

[0055] In the embodiment of the present disclosure, the thickness of the second buffer layer 202 may be 50-100 nm.

[0056] Exemplarily, the second buffer layer 202 has a thickness of 80 nm.

[0057] In this implementation, the second buffer layer having the above-mentioned thickness can play a role in lattice transformation and stress release on the one hand, and on the other hand, the thickness will not cause the thickness of the entire light-emitting diode to be too large.

[0058] In the embodiment of the present disclosure, the light emitting diode further includes: a substrate 100 and a third buffer layer 206 located between the substrate 100 and the first buffer layer 201 , and the third buffer layer 206 is an AlN layer.

[0059] In the embodiment of the present disclosure, the third buffer layer 206 serves as a seed layer for the growth of the first buffer layer, providing a basis for the growth of the first buffer layer.

[0060] In the embodiment of the present disclosure, the thickness of the third buffer layer 206 may be 20-30 nm.

[0061] Exemplarily, the third buffer layer 206 has a thickness of 25 nm.

[0062] In this implementation, the third buffer layer having the above-mentioned thickness can, on the one hand, function as a seed layer, and on the other hand, the thickness will not cause the thickness of the entire light-emitting diode to be too large.

[0063] Optionally, the light emitting diode may further include an electrode structure, and the electrode structure is electrically connected to the epitaxial structure.

[0064] The embodiments of the present disclosure do not limit the arrangement of the electrode structure. For example, steps may be provided on the epitaxial structure to arrange the electrodes, or electrodes may be directly arranged at both ends of the epitaxial structure.

[0065] Figure 3 is a schematic diagram of the structure of another light emitting diode provided by an embodiment of the present disclosure. Figure 3 In the embodiment, the first semiconductor layer may be an N-type GaN layer, and the second semiconductor layer may be a P-type GaN layer.

[0066] See also Figure 3 The light emitting diode further includes: an AlGaN transition layer 207, which is located between the second buffer layer 202 and the first semiconductor layer 203 to provide a transition for subsequent semiconductor layer growth.

[0067] See also Figure 3 The light emitting diode further includes: an electron blocking layer 208, which is located between the active layer 204 and the second semiconductor layer 205 and is used to regulate carrier distribution.

[0068] See also Figure 3 The light emitting diode further includes: a P-type contact layer 209, the P-type contact layer 209 covers the second semiconductor layer 205, and realizes ohmic contact between the second semiconductor layer and the P-type electrode.

[0069] It is worth noting that in the embodiments of the present disclosure, structures may be selectively increased or decreased based on the structure of the above-mentioned light emitting diode, and the present disclosure does not impose any limitation on this.

[0070] Figure 4 is a schematic diagram of the structure of a display panel provided by an embodiment of the present disclosure. Figure 4 As shown, the display panel includes a plurality of pixel units 200, each pixel unit 200 includes Figure 1 or Figure 3 The light emitting diodes shown.

[0071] In the embodiment of the present disclosure, the light emitting diode includes a first buffer layer, a first semiconductor layer, an active layer, and a second semiconductor layer. The first buffer layer includes a plurality of first sublayers and second sublayers alternately stacked in a periodic manner. The first sublayer is TiO 2 sublayer, the second sublayer is AlN sublayer, TiO 2 Both TiO and AlN are intrinsic layers, in a high-resistance state, which can reduce leakage current and improve the stability of device operation. 2 There is a refractive index difference between TiO 2 The refractive index is 2.2-2.4, and the refractive index of AlN is 1.9-2.05. ), and because the first sublayer and the second sublayer are periodically configured, this material has a refractive index difference and a periodic configuration, which can effectively reflect the light in the internal light path and improve the luminous efficiency. Thereby improving the light extraction efficiency and stability of the display panel.

[0072] exist Figure 4 In the display panel shown, each pixel unit may include a red sub-pixel, a green sub-pixel, and a blue sub-pixel.

[0073] Among them, each sub-pixel corresponds to a light-emitting unit, and the red light sub-pixel, the green light sub-pixel and the blue light sub-pixel can all adopt a light-emitting unit of a GaN-based epitaxial structure. The difference in light-emitting colors mainly lies in the different In component contents in the quantum well.

[0074] Optionally, the display panel may further include: a pixel driving circuit, the pixel driving circuit including a plurality of driving units for driving the luminous brightness of the pixel unit. The pixel driving circuit may include 4 thin film transistors and 1 capacitor (i.e., a 4T1C circuit), or may include 5 thin film transistors and 2 capacitors (i.e., a 5T2C circuit), or may include more thin film transistors and capacitors.

[0075] The display panel provided in the embodiments of the present disclosure can be applied to micro-display fields such as wearable devices, such as head-mounted displays, augmented reality and virtual reality systems, etc., and can also be a near-eye display device, such as augmented reality (AR) and virtual reality (VR) display devices.

[0076] In the field of micro-display, as the size decreases, non-radiative recombination will increase accordingly, quantum efficiency will decrease, and light efficiency will decrease. Through the buffer layer design of the embodiment of the present disclosure, it is possible to improve the light extraction efficiency and increase stability.

[0077] The process flow of the solution provided by the embodiment of the present disclosure is relatively simple. Titanium dioxide and aluminum nitride are alternately grown on a silicon substrate to form a first buffer layer, which can achieve a reflectivity of more than 90% in the visible light band. The control of the compressive stress of the stacked growth balances the stress of the subsequent epitaxial growth. The aluminum nitride after the first buffer layer constitutes the second buffer layer, further realizing the crystal structure of the hexagonal lattice, and effectively reducing the leakage current that may exist in the buffer layer, providing a suitable substrate for the subsequent growth of high-quality micro-display epitaxial structures, and finally obtaining a high-performance micro-display panel device.

[0078] Figure 5 is a flow chart of a method for preparing a light emitting diode provided by an embodiment of the present disclosure. Figure 5 The method steps include:

[0079] S11, manufacturing a first buffer layer, wherein the first buffer layer is a first sublayer and a second sublayer that are alternately stacked in a plurality of periods, the first buffer layer comprises a first sublayer and a second sublayer that are alternately stacked in a plurality of periods, and the first sublayer is TiO 2 Sublayer, the second sublayer is an AlN sublayer.

[0080] S12, forming a first semiconductor layer on the first buffer layer.

[0081] S13, fabricating an active layer on the first semiconductor layer.

[0082] S14, fabricating a second semiconductor layer on the active layer.

[0083] In the embodiment of the present disclosure, the light emitting diode includes a first buffer layer, a first semiconductor layer, an active layer, and a second semiconductor layer. The first buffer layer includes a plurality of first sublayers and second sublayers alternately stacked in a periodic manner. The first sublayer is TiO 2 sublayer, the second sublayer is AlN sublayer, TiO 2 Both TiO and AlN are intrinsic layers, in a high-resistance state, which can reduce leakage current and improve the stability of device operation. 2 There is a refractive index difference between TiO2 The refractive index is 2.2-2.4, and the refractive index of AlN is 1.9-2.05. ), and because the first sublayer and the second sublayer are periodically configured, this material has a refractive index difference and a periodic configuration, which can achieve effective reflection of the light in the internal light path and improve the luminous efficiency.

[0084] Figure 6 is a flow chart of another method for preparing a light emitting diode provided by an embodiment of the present disclosure. Figure 4 The method steps include:

[0085] S21. Fabricate a third buffer layer on the substrate.

[0086] In the embodiment of the present disclosure, the third buffer layer is an AlN layer. The third buffer layer serves as a seed layer for the growth of the first buffer layer, providing a basis for the growth of the first buffer layer.

[0087] In the embodiment of the present disclosure, the thickness of the third buffer layer may be 20-30 nm.

[0088] Exemplarily, the third buffer layer has a thickness of 25 nm.

[0089] In this implementation, the third buffer layer having the above-mentioned thickness can, on the one hand, function as a seed layer, and on the other hand, the thickness will not cause the thickness of the entire light-emitting diode to be too large.

[0090] In the embodiment of the present disclosure, the growth of light-emitting diodes can be achieved by using VeecoK465i or C4 or RB Metal Organic Chemical Vapor Deposition (MOCVD) equipment or AIXTRON Metal Organic Chemical Vapor Deposition equipment. 2 (Hydrogen) or high purity N 2 (nitrogen) or high purity H 2 and high purity N 2 A mixed gas of high purity NH 3 As the N source, trimethylgallium (TMGa) and triethylgallium (TEGa) as the gallium source, trimethylindium (TMIn) as the indium source, silane (SiH 4 ) as N-type dopant, trimethylaluminum (TMAl) as aluminum source, bis(cyclopentadienyl)magnesium (CP 2 Mg) as a P-type dopant.

[0091] S22, manufacturing a first buffer layer on the third buffer layer.

[0092] In the embodiment of the present disclosure, the first buffer layer may be a first sublayer and a second sublayer that are alternately stacked in a periodic manner. During the manufacturing process, the first sublayer and the second sublayer are periodically deposited in sequence on the third buffer layer.

[0093] In the embodiment of the present disclosure, the first sublayer is TiO 2 sublayer, the second sublayer is AlN sublayer, TiO 2 Both TiO and AlN are intrinsic layers, in a high-resistance state, which can reduce leakage current and improve the stability of device operation. 2 There is a refractive index difference between TiO 2 The refractive index is 2.2-2.4, and the refractive index of AlN is 1.9-2.05. ), and because the first sublayer and the second sublayer are periodically configured, this material has a refractive index difference and a periodic configuration, which can achieve effective reflection of the light in the internal light path and improve the luminous efficiency.

[0094] In the embodiment of the present disclosure, the stacking period of the first sub-layer and the second sub-layer may be 2 to 10.

[0095] Exemplarily, the stacking period of the first sub-layer and the second sub-layer is 5.

[0096] In this implementation, the first sublayer and the second sublayer are stacked, which can effectively avoid leakage current and improve reflectivity, and the number of cycles will not be too large, which will lead to an excessive thickness of the entire light-emitting diode. In the embodiment of the present disclosure, the thickness of a single first sublayer can be 20 to 50 nm, and the thickness of a single second sublayer can be 30 to 60 nm.

[0097] Exemplarily, the thickness of the first sublayer is 30 nm, and the thickness of the second sublayer is 50 nm.

[0098] In this implementation, the first sublayer and the second sublayer of the above-mentioned thickness are used, so that the first sublayer and the second sublayer have sufficient thickness to avoid leakage current, and the above-mentioned thickness can ensure that the refractive index difference between the first sublayer and the second sublayer can emit as much light as possible; in addition, the above-mentioned thickness will not cause the thickness of the entire light-emitting diode to be too large.

[0099] S23, manufacturing a second buffer layer on the first buffer layer.

[0100] In the embodiment of the present disclosure, the second buffer layer may be an AlN layer.

[0101] In this implementation, the growth of the AlN sublayer in the first buffer layer realizes the basis of the hexagonal lattice, so that the AlN crystal quality of the second buffer layer is improved, and the substrate is transformed into a hexagonal lattice crystal structure through the first buffer layer and the second buffer layer, providing a good foundation for subsequent GaN epitaxy, so that the GaN epitaxy has a good atomic arrangement and a smooth surface. In addition, the first buffer layer and the second buffer layer are in a compressive stress state, and the compressive stress range is 0.3-1.5GPa, which plays an important role in the subsequent epitaxial stress regulation.

[0102] In the embodiment of the present disclosure, the thickness of the second buffer layer may be 50-100 nm.

[0103] Exemplarily, the second buffer layer has a thickness of 80 nm.

[0104] In this implementation, the second buffer layer having the above-mentioned thickness can play a role in lattice transformation and stress release on the one hand, and on the other hand, the thickness will not cause the thickness of the entire light-emitting diode to be too large.

[0105] In the disclosed embodiment, the transition from the silicon substrate to the hexagonal lattice crystal structure is achieved through the designed three-layer buffer layer. The entire buffer layer is in a compressive stress state with a compressive stress range of 0.3-1.5 GPa, which plays an important role in subsequent epitaxial stress regulation.

[0106] S24, fabricating an AlGaN transition layer on the second buffer layer.

[0107] In the embodiment of the present disclosure, the AlGaN transition layer provides a transition for the subsequent semiconductor layer growth.

[0108] S25, fabricating a first semiconductor layer on the AlGaN transition layer.

[0109] In a possible implementation of the present disclosure, the first semiconductor layer is an N-type semiconductor layer.

[0110] Exemplarily, the first semiconductor layer may be an N-type GaN layer.

[0111] In another possible implementation manner, the first semiconductor layer is a P-type semiconductor layer.

[0112] Exemplarily, the first semiconductor layer may be a P-type GaN layer.

[0113] S26, fabricating an active layer on the first semiconductor layer.

[0114] In the embodiment of the present disclosure, the active layer may be a multi-quantum well layer, such as an InGaN / GaN multi-quantum well structure.

[0115] S27. Fabricate an electron blocking layer on the active layer.

[0116] In the embodiment of the present disclosure, the electron blocking layer may be an AlGaN layer for regulating carrier distribution.

[0117] S28. Fabricate a second semiconductor layer on the electron blocking layer.

[0118] In a possible implementation of the present disclosure, the second semiconductor layer is a P-type semiconductor layer.

[0119] Exemplarily, the second semiconductor layer may be a P-type GaN layer.

[0120] In another possible implementation, the second semiconductor layer is an N-type semiconductor layer.

[0121] Exemplarily, the second semiconductor layer may be an N-type GaN layer.

[0122] S29, fabricating a P-type contact layer on the second semiconductor layer.

[0123] In the embodiment of the present disclosure, the P-type contact layer can realize ohmic contact between the second semiconductor layer and the P-type electrode.

[0124] Figure 7 is a line graph of the reflectivity of the light-emitting diode provided by the embodiment of the present disclosure at different wavelengths. Figure 7 , the horizontal axis is the wavelength, in nm; the vertical axis is the reflectivity. The test wavelength range is 400-800nm. Figure 7 It can be clearly concluded that within the visible light range of 400 to 700 nm, the reflectivity can reach more than 90%.

[0125] The above description is only an optional embodiment of the present disclosure and is not intended to limit the present disclosure. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present disclosure shall be included in the protection scope of the present disclosure.

Claims

1. A light emitting diode, characterized in that: The light-emitting diode comprises: a first buffer layer (201), a first semiconductor layer (203), an active layer (204) and a second semiconductor layer (205) stacked in sequence, the first buffer layer (201) comprising a plurality of first sublayers (301) and second sublayers (302) stacked alternately in a periodic manner, the first sublayer (301) being a TiO2 sublayer, and the second sublayer (302) being an AlN sublayer.

2. The light emitting diode according to claim 1, characterized in that: The stacking period of the first sub-layer (301) and the second sub-layer (302) is 2 to 10.

3. The light emitting diode according to claim 1, characterized in that: The thickness of the first sublayer (301) is 20-50 nm, and the thickness of the second sublayer (302) is 30-60 nm.

4. The light emitting diode according to any one of claims 1 to 3, characterized in that: The light emitting diode further comprises: a second buffer layer (202) located between the first buffer layer (201) and the first semiconductor layer (203); The second buffer layer (202) is an AlN layer.

5. The light emitting diode according to claim 4, characterized in that: The second buffer layer (202) has a thickness of 50-100 nm.

6. The light emitting diode according to any one of claims 1 to 3, characterized in that: The light emitting diode further comprises: a substrate (100) and a third buffer layer (206) located between the substrate (100) and the first buffer layer (201); The third buffer layer (206) is an AlN layer.

7. The light emitting diode according to claim 6, characterized in that: The thickness of the third buffer layer (206) is 20-30 nm.

8. A method for preparing a light emitting diode, characterized in that: The method comprises: Manufacturing a first buffer layer, wherein the first buffer layer is a first sublayer and a second sublayer that are alternately stacked in a plurality of periods, the first buffer layer includes a first sublayer and a second sublayer that are alternately stacked in a plurality of periods, the first sublayer is a TiO2 sublayer, and the second sublayer is an AlN sublayer; forming a first semiconductor layer on the first buffer layer; forming an active layer on the first semiconductor layer; A second semiconductor layer is formed on the active layer.

9. The method for preparing a light emitting diode according to claim 8, characterized in that: The method further comprises: Growing a third buffer layer on the substrate, wherein the third buffer layer is located between the substrate and the first buffer layer, and the third buffer layer is an AlN layer; A second buffer layer is grown between the first buffer layer and the first semiconductor layer, and the second buffer layer is an AlN layer.

10. A display panel, characterized in that: The display panel comprises pixel units distributed in an array, and the pixel units comprise the light emitting diodes as claimed in any one of claims 1 to 7.

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