Thin film deposition device and method
By introducing a steady flow module into the thin film deposition device, and using magnetic force to drive the spiral blade rotor to rotate to compensate for the gas pressure, the problem of unstable gas pressure in the semiconductor coating equipment is solved and the film deposition quality is improved.
Patent Information
- Application Number
- CN202411863022.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-16
- Publication Date
- 2025-03-21
- Estimated Expiration
- 2044-12-16
AI Technical Summary
In semiconductor coating equipment, when the atomic layer deposition valve is opened or closed, the gas pressure flowing into the process chamber cannot be maintained stable, affecting the film deposition quality.
A thin film deposition device is designed, including a gas source, a process chamber and a flow stabilization module. The steady flow module consists of a gas chamber, a magnet stator and a spiral blade rotor. The spiral blade rotor is driven by magnetic force to rotate, pushing the remaining gas in the air chamber towards the outlet, compensating the output air pressure, and ensuring the constant gas flow rate and pressure.
Through the design of the steady flow module, the gas pressure can be effectively maintained, the film deposition quality can be improved, and the reaction gas flow rate and pressure can be constant.