Etching equipment based on semiconductor processing

Abstract

The invention belongs to the technical field of semiconductor processing, and discloses semiconductor processing-based etching equipment, which comprises a support box, a processing box and an etching box, a recovery pipe is installed on the left side of the support box, one end of the recovery pipe is communicated with the processing box, the etching box is installed on the top of the support box, and the processing box is communicated with the processing box. And a liquid storage box is installed in an inner cavity of the supporting box and communicates with the treatment box, a pump is installed on the right side of the liquid storage box, and the drainage end of the pump is fixedly connected with a communicating pipe. According to the device, the telescopic rod drives the second sealing plate to contract and move, the recovery opening is opened, and etching waste liquid subjected to consumption reaction is discharged in time, so that the etching liquid in the isolation chamber can be replaced for multiple times, reactant residues on the surface of a wafer can be washed away every time the etching liquid is replaced, the stability of the pH value in the isolation chamber is maintained in time through the design, and the service life of the wafer is prolonged. And the concentration of reactants generated by consumption of the etching liquid in the isolation chamber is reduced, and the reaction rate is increased.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor processing, and in particular relates to an etching device based on semiconductor processing. Background Art

[0002] Semiconductors are widely used in high-tech fields such as chip manufacturing and photovoltaic power generation. They are an important element in promoting the progress of science and technology. In order to make the wafer have the function of integrated circuits, it is necessary to use etching equipment to etch fine geometric patterns on the surface of the wafer to form various functional units of the integrated circuit. First, a layer of photosensitive glue (photoresist) needs to be coated on the surface of the wafer, and a mask pattern is formed through the process of exposure and development. This pattern determines which areas will be retained and which areas will be etched away; etching process: After the mask preparation is completed, the etching equipment starts working. Currently, etching includes wet etching and dry etching. The more commonly used is wet etching: the wafer is placed in a container filled with chemical liquid, so that the chemical liquid reacts with the surface of the wafer. The etching function is achieved by corroding and consuming the part of the wafer surface that is not coated with photoresist; however, in the prior art, when the wafer is placed in a chemical liquid, there are problems of low reaction rate and high output of chemical waste liquid. Due to the immersion method, the chemical liquid and the wafer surface react in a passive contact manner, the molecular structure movement degree in the chemical liquid is low, and the reaction rate of the remaining wafer surface is not high. As the reaction proceeds, the concentration of acidic substances in the chemical liquid decreases and the concentration of reactants increases, and the pH value cannot be stably maintained in a suitable reaction range. The concentrated chemical liquid is easily contaminated by the silicate mixture generated by the reaction, forming chemical waste liquid, and increasing the difficulty of chemical waste liquid treatment. Therefore, it is urgent to solve the problem. Summary of the invention

[0003] The object of the present invention is to provide an etching device based on semiconductor processing to solve the problems raised in the above background technology.

[0004] In order to achieve the above-mentioned purpose, the present invention provides the following technical solutions: an etching device based on semiconductor processing, comprising a support box, a processing box and an etching box, a recovery pipe is installed on the left side of the support box, one end of the recovery pipe is connected to the processing box, the etching box is installed on the top of the support box, a liquid storage tank is installed in the inner cavity of the support box and is connected to the processing box, a pump is installed on the right side of the liquid storage tank, a connecting pipe is fixedly connected to the drainage end of the pump, one end of the connecting pipe is connected to the etching box, an etching groove is opened on the top of the etching box, a plurality of groups of placement grooves are opened horizontally and equidistantly on the inner wall of the etching groove, a wafer is placed inside the placement groove, a plurality of groups of liquid ports and liquid drainage grooves are opened at the bottom of the etching groove and are distributed horizontally and equidistantly, the liquid ports and the placement grooves are mutually connected Staggered, a transfer chamber located below the liquid outlet is provided inside the etching box, the transfer chamber is connected with the liquid outlet, a heater is installed on the inner wall of the transfer chamber, a plurality of isolation plates are fixedly installed on the inner wall of the etching groove, the isolation plates are connected and arranged at the top of the liquid outlet, a plurality of drainage ports are provided on the side of the isolation plate facing the wafer, a sealing plate 1 is sealed and connected to the inner wall of the isolation plate, a plurality of liquid inlet grooves are provided on the side of the sealing plate 1, the drainage ports and the liquid inlet grooves are alternately distributed up and down, a supplementary port connected with the transfer chamber is provided on the right side of the etching box, a spring 2 is elastically connected to the right side of the inner wall of the heater, one end of the spring 2 is elastically connected to a connecting block, a sealing block is fixedly connected to the right side of the connecting block, and the sealing block is adapted to abut against the supplementary port.

[0005] As a preferred solution of the present invention, there are two drainage troughs in each group, which are symmetrically distributed on both sides of each group of wafers. The bottom opening of the drainage trough penetrates downward to the bottom of the etching box and is connected to the inner cavity of the support box.

[0006] As a preferred solution of the present invention, a recovery port connected to the bottom opening of the drainage trough is opened on the top of the support box, a telescopic rod is fixedly installed on the top of the rear side of the inner wall of the support box, and a sealing plate 2 is fixedly connected to the telescopic end of the telescopic rod, and the top of the sealing plate 2 abuts against the bottom of the inner wall of the support box to form a seal for the recovery port.

[0007] As a preferred solution of the present invention, a plurality of groups of springs are elastically connected between the bottom of the inner wall of the isolation plate and the top of the sealing plate, and the liquid inlet groove and the liquid outlet are both located on the upper side of the wafer surface.

[0008] As a preferred solution of the present invention, the inner cavity of the etching groove is divided into isolation chambers of the same number as the wafers by multiple groups of isolation plates, and the isolation chambers are connected to the inner cavity of the support box through a drainage trough.

[0009] As a preferred solution of the present invention, the second spring is stretched and arranged between the connecting block and the inner wall of the transfer chamber, the sealing block is shaped like a sphere, and the diameter of the sealing block is greater than the inner diameter of the supplementary port.

[0010] As a preferred solution of the present invention, the longitudinal section of the sealing plate 2 is in an "L" shape, and the horizontal portion of the sealing plate 2 is wider than the front-to-rear spacing of the inner wall of the recovery port.

[0011] As a preferred solution of the present invention, the liquid storage tank is made of Teflon, and a gap is left between the left side of the liquid storage tank and the left side of the inner wall of the support box.

[0012] The beneficial effects of the present invention are as follows:

[0013] 1. The device has been redesigned to achieve phased output of etching solution, and ensure that each output of etching solution is discharged immediately after the etching is completed, so that the etching solution used for wafer etching can always be at the optimal concentration and the optimal pH value. By opening multiple groups of placement grooves on the inner wall of the etching tank, multiple groups of wafers can be parallel to each other and horizontally equidistantly distributed. The multiple groups of placement grooves are isolated by multiple groups of isolation plates, and multiple groups of isolation chambers are formed on the inner wall of the etching tank by the isolation plates, ensuring that the etching solution in each isolation chamber only acts on one side of each group of wafers. By providing a sealing plate located in the inner cavity of the isolation plate and sealingly abutting against the inner wall of the isolation plate, the etching solution from the pump and the liquid storage tank continuously flows into the inner cavity of the isolation plate and automatically flows upward. The sealing plate 1 is pushed to move so that a certain area of ​​the liquid inlet groove and the liquid discharge port can overlap, and the etching liquid is sprayed vertically on the surface of the wafer. When the etching liquid just starts to enter the isolation chamber, the upper side of the wafer surface is etched and rinsed in an impact manner, and the etching liquid level gradually covers the wafer to complete the complete immersion of the wafer. Subsequently, the sealing plate 2 is driven to shrink and move by the telescopic rod to open the recovery port so that the etching waste liquid that has undergone the consumption reaction is discharged in time, so that the etching liquid in the isolation chamber can be replaced multiple times, and each replacement will rinse away the reactant residues on the wafer surface. This design not only maintains the stability of the pH value in the isolation chamber in time, but also reduces the concentration of reactants produced by the etching liquid that has been consumed in the isolation chamber, thereby increasing the reaction rate.

[0014] 2. The device is provided with a connecting block and a sealing block located on the right side of the inner wall of the transfer chamber. Under the tensile action of spring 2, the sealing block is firmly abutted against the opening of the replenishing port. When the pump stops running, the sealing block that loses the positive pressure thrust of the etching liquid maintains a sealed abutment state with the replenishing port. At the same time, spring 1 arranged on the inner wall of the isolation plate will drive sealing plate 1 to reset and block the drain port to prevent the etching liquid in the transfer chamber and the inner cavity of the isolation plate from entering the isolation chamber. At this time, the inner cavity of the transfer chamber and the isolation plate are connected to form a sealed transfer area for placing the etching liquid. The transfer area is heated by a heater so that the etching liquid can be pre-heated to 60°C-100°C therein, and the amount of etching liquid in the transfer area is very small, thereby reducing the power consumption of the device.

[0015] 3. This device also realizes the residual heat recovery function of the etching liquid by building a liquid storage tank into the support box. The liquid storage tank made of special thermal conductive material is filled with etching liquid, and the etching waste liquid in the isolation chamber is introduced into the inner cavity of the support box through the drainage trough. At this time, more and more chemical waste liquid is accumulated in the inner cavity of the support box, and the liquid storage tank is immersed in it, so that the heat of the chemical waste liquid is transferred to the etching liquid through the liquid storage tank, thereby realizing heat recovery and further reducing the energy consumption of the heater. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a front perspective schematic diagram of the overall structure of the present invention;

[0017] Figure 2 It is a front cutaway schematic diagram of the overall structure of the present invention;

[0018] Figure 3 For the present invention Figure 2 A magnified schematic diagram of the structure at center A;

[0019] Figure 4 For the present invention Figure 2 A magnified schematic diagram of the structure at B in the middle;

[0020] Figure 5 The side cutaway diagram of the support box and etching box of the present invention is shown in FIG. Figure 1 ;

[0021] Figure 6 For the present invention Figure 5 A magnified schematic diagram of the structure at C in the middle;

[0022] Figure 7 It is a schematic diagram of the separation of the etching box, wafer, isolation plate, spring 1, sealing plate 1 and heater of the present invention;

[0023] Figure 8 The side cutaway diagram of the support box and etching box of the present invention is shown in FIG. Figure 2 ;

[0024] Fig. 9It is a schematic diagram of the top view of the overall structure of the present invention.

[0025] In the figure: 1. support box; 2. processing box; 3. etching box; 4. pump; 5. connecting pipe; 6. etching tank; 7. placement tank; 8. wafer; 9. isolation plate; 10. drain port; 11. spring 1; 12. sealing plate 1; 13. liquid inlet tank; 14. liquid outlet; 15. transfer chamber; 16. heater; 17. replenishment port; 18. connecting block; 19. sealing block; 20. spring 2; 21. drain tank; 22. liquid storage tank; 23. recovery pipe; 24. sealing plate 2; 25. recovery port; 26. telescopic rod. DETAILED DESCRIPTION

[0026] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0027] like Figures 1 to 9 As shown, an embodiment of the present invention provides an etching device based on semiconductor processing, including a support box 1, a processing box 2 and an etching box 3. A recovery pipe 23 is installed on the left side of the support box 1, and one end of the recovery pipe 23 is connected to the processing box 2. The etching box 3 is installed on the top of the support box 1. A liquid storage tank 22 is installed in the inner cavity of the support box 1 and is connected to the processing box 2. A pump 4 is installed on the right side of the liquid storage tank 22. A connecting pipe 5 is fixedly connected to the drainage end of the pump 4, and one end of the connecting pipe 5 is connected to the etching box 3. An etching groove 6 is opened on the top of the etching box 3. A plurality of groups of placement grooves 7 are opened horizontally and equidistantly on the inner wall of the etching groove 6. Wafers 8 are placed inside the placement grooves 7. A plurality of groups of liquid ports 14 and liquid drainage grooves 21 are opened at the bottom of the etching groove 6 and are distributed horizontally and equidistantly. The liquid ports 14 and the placement grooves 7 are staggered with each other. The interior of the etching box 3 is opened A transfer chamber 15 is located below the liquid outlet 14, the transfer chamber 15 is connected to the liquid outlet 14, a heater 16 is installed on the inner wall of the transfer chamber 15, multiple groups of isolation plates 9 are fixedly installed on the inner wall of the etching groove 6, the isolation plates 9 are connected and arranged at the top of the liquid outlet 14, multiple groups of drainage ports 10 are opened on the side of the isolation plate 9 facing the wafer 8, the inner wall of the isolation plate 9 is sealed with a sealing plate 12, and multiple groups of liquid inlet grooves 13 are opened on the side of the sealing plate 12, the drainage ports 10 and the liquid inlet grooves 13 are alternately distributed up and down, a replenishing port 17 connected to the transfer chamber 15 is opened on the right side of the etching box 3, a spring 20 is elastically connected to the right side of the inner wall of the heater 16, one end of the spring 20 is elastically connected to a connecting block 18, a sealing block 19 is fixedly connected to the right side of the connecting block 18, and the sealing block 19 is adapted to abut against the replenishing port 17;

[0028] The device has been redesigned to output the etching solution in stages, and ensure that each output etching solution is discharged immediately after the etching is completed, so that the etching solution used for etching the wafer 8 can always be at the optimal concentration and the optimal pH value. By opening a plurality of groups of placement grooves 7 on the inner wall of the etching groove 6, the plurality of groups of wafers 8 can be parallel to each other and horizontally equidistantly distributed. The plurality of groups of placement grooves 7 are isolated by a plurality of groups of isolation plates 9, and a plurality of groups of isolation chambers are formed on the inner wall of the etching groove 6 by the isolation plates 9, so that the etching solution in each isolation chamber only acts on one side of each group of wafers 8. A sealing plate 12 is provided in the inner cavity of the isolation plate 9 and is sealed against the inner wall of the isolation plate 9, so that the etching solution from the pump 4 and the liquid storage tank 22 continuously flows into the inner cavity of the isolation plate 9 and is automatically pushed upward. The movable sealing plate 12 moves so that a certain area can be overlapped between the liquid inlet groove 13 and the liquid discharge port 10, and the etching liquid is vertically sprayed on the surface of the wafer 8. When the etching liquid just starts to enter the isolation chamber, the upper side of the surface of the wafer 8 is etched and rinsed in an impact manner, and the etching liquid level gradually covers the wafer 8 to complete the immersion of the wafer 8. Subsequently, the sealing plate 24 is driven to shrink and move by the telescopic rod 26, and the recovery port 25 is opened to discharge the etching waste liquid that has been consumed by the reaction in time, so that the etching liquid in the isolation chamber can be replaced many times, and each replacement will rinse away the reactant residues on the surface of the wafer 8. This design not only maintains the stability of the pH value in the isolation chamber in time, but also reduces the concentration of reactants produced by the etching liquid that has been consumed in the isolation chamber, thereby increasing the reaction rate.

[0029] There are two drainage grooves 21 in each group, which are symmetrically distributed on both sides of each group of wafers 8. The bottom opening of the drainage groove 21 penetrates downward to the bottom of the etching box 3 and communicates with the inner cavity of the support box 1.

[0030] The drainage trough 21 is connected to the isolation chamber upwards and to the inner cavity of the support box 1 downwards. When the recovery port 25 is opened by the contraction of the telescopic rod 26 and the sealing plate 24, the etching waste liquid that has been consumed by etching in the isolation chamber can flow downwards along the drainage trough 21 into the inner cavity of the support box 1.

[0031] The top of the support box 1 is provided with a recovery port 25 connected to the bottom opening of the drain tank 21, and a telescopic rod 26 is fixedly installed on the top of the rear side of the inner wall of the support box 1. The telescopic end of the telescopic rod 26 is fixedly connected with a sealing plate 24. The top of the sealing plate 24 abuts against the bottom of the inner wall of the support box 1 and forms a seal for the recovery port 25.

[0032] The recovery port 25 is the top opening of the support box 1, which is responsible for receiving the chemical waste liquid consumed by etching in the isolation chamber guided by the drainage trough 21. The sealing plate 24 is driven to abut against the top of the inner wall of the support box 1 by a telescopic rod 26, thereby realizing the opening and closing of the drainage trough 21.

[0033] Among them, multiple groups of springs 11 are elastically connected between the bottom of the inner wall of the isolation plate 9 and the top of the sealing plate 12, and the liquid inlet groove 13 and the liquid outlet 10 are both located on the upper side of the surface of the wafer 8;

[0034] The spring 11 elastically connects the sealing plate 12 downward, so that the initial position of the sealing plate 12 is biased downward, and the discharge port 10 and the liquid inlet groove 13 are designed to be staggered up and down. This design is responsible for driving the sealing plate 12 downward to reset through the spring 11 after the pump 4 stops starting, and the discharge port 10 and the liquid inlet groove 13 are staggered again and automatically sealed.

[0035] The inner cavity of the etching groove 6 is divided into the same number of isolation chambers as the wafers 8 by multiple groups of isolation plates 9 at equal distances, and the isolation chambers are connected to the inner cavity of the support box 1 through the drainage groove 21;

[0036] The isolation plate 9 divides the inner cavity of the etching groove 6 into a plurality of isolation chambers, each of which can be filled with etching liquid, so that the etching liquid concentration in each isolation chamber is equal, the reaction speed is equal, and the etching degree is equal.

[0037] The spring 20 is stretched and arranged between the connecting block 18 and the inner wall of the transfer chamber 15, the sealing block 19 is spherical in shape, and the diameter of the sealing block 19 is greater than the inner diameter of the supplementary port 17;

[0038] The device is provided with a connecting block 18 and a sealing block 19 located on the right side of the inner wall of the transfer chamber 15. Under the tensile action of the spring 20, the sealing block 19 is firmly abutted against the opening of the replenishing port 17. When the pump 4 stops running, the sealing block 19, which loses the positive pressure thrust of the etching liquid, maintains a sealed abutment state with the replenishing port 17. At the same time, the spring 11 arranged on the inner wall of the isolation plate 9 will drive the sealing plate 12 to reset and block the drain port 10 to prevent the etching liquid in the transfer chamber 15 and the inner cavity of the isolation plate 9 from entering the isolation chamber. At this time, the inner cavity of the transfer chamber 15 and the isolation plate 9 is connected to form a sealed transfer area for placing the etching liquid. The transfer area is heated by the heater 16 so that the etching liquid can be pre-heated to 60°C-100°C therein, and the amount of etching liquid in the transfer area is very small, thereby reducing the power consumption of the device.

[0039] The longitudinal section of the sealing plate 24 is in an "L" shape, and the horizontal portion of the sealing plate 24 is wider than the front-to-back spacing of the inner wall of the recovery port 25;

[0040] The "L"-shaped design of the sealing plate 24 not only allows it to abut against the inner wall of the support box 1 upwards, but also allows its horizontal portion to be connected to the telescopic end of the telescopic rod 26, thereby facilitating the sealing opening and closing operation of the recovery port 25.

[0041] The liquid storage tank 22 is made of Teflon, and a gap is left between the left side of the liquid storage tank 22 and the left side of the inner wall of the support box 1;

[0042] The device also realizes the residual heat recovery function of the etching liquid by building a liquid storage tank 22 into the support box 1. The liquid storage tank 22 made of special thermal conductive material is filled with etching liquid, and the etching waste liquid in the isolation chamber is introduced into the inner cavity of the support box 1 through the drainage groove 21. At this time, more and more chemical waste liquid is accumulated in the inner cavity of the support box 1, and the liquid storage tank 22 is immersed in it, so that the heat of the chemical waste liquid is transferred to the etching liquid through the liquid storage tank 22, thereby realizing heat recovery and further reducing the energy consumption of the heater 16.

[0043] Working principle:

[0044] First, check the device and ensure that the sealing plate 24 is blocked at the recovery port 25. Use the robot to vertically place multiple groups of wafers 8 in different wafers 8, start the pump 4, and pump the etching solution in the liquid storage tank 22 upward to the transfer chamber 15 through the connecting pipe 5. Figure 4 As shown, the etching liquid from the pump 4 and the connecting pipe 5 pushes the sealing block 19 to the left, and drives the connecting block 18 to stretch the spring 20, thereby opening the replenishing port 17, so that the connecting pipe 5 is connected with the inner cavity of the transfer chamber 15, and the etching liquid begins to enter the inner cavity of the transfer chamber 15, and gradually fills up the transfer chamber 15, and enters the inner cavity of the isolation plate 9 upward along the liquid port 14;

[0045] Then, the heater 16 is turned on to heat the etching liquid in the transfer chamber 15, so that the temperature of the etching liquid is maintained between 60°C and 100°C. When the heated etching liquid gradually fills the inner cavity of the isolation plate 9, since the sealing plate 12 and the inner wall of the isolation plate 9 are in contact and sealed with each other, and the drainage port 10 and the liquid inlet groove 13 are in an up-and-down staggered distribution state, at this time, the sealing plate 12 as a whole is subjected to an upward hydraulic thrust while the etching liquid continues to flow into the inner cavity of the isolation plate 9, and continues to move upward, compressing the spring 11 until there is an overlap between the liquid inlet groove 13 and the drainage port 10, which shows that The liquid discharge port 10 is connected with the liquid inlet tank 13. At this time, the etching liquid is sprayed horizontally toward the surface of the wafer 8 along the axis of the liquid inlet tank 13. Since the wafer 8 is vertically arranged in the placement tank 7, the etching liquid is vertically sprayed toward the upper side of the surface of the wafer 8 and reacts with the surface of the wafer 8 to perform etching. When the etching liquid level in the isolation chamber is above the wafer 8, the pump 4 stops pumping the etching liquid into the transfer chamber 15. The sealing plate 12, which loses the thrust of the etching liquid flow, moves downward under the action of the spring 11 and resets. At this time, the liquid inlet tank 13 and the liquid discharge port 10 are staggered, and the inner cavity of the isolation plate 9 is sealed and isolated from the isolation chamber.

[0046] Finally, when the etching liquid in the isolation chamber is consumed, the concentration of the silicate mixture therein increases, the pH value increases, and it is no longer suitable for etching the surface of the wafer 8. At this time, the telescopic rod 26 is started and contracted, driving the sealing plate 24 to move backward, opening the recovery port 25, and recovering the etching liquid in the isolation chamber along the drainage groove 21 to the inner cavity of the support box 1. At this time, the chemical waste liquid entering the support box 1 still has residual temperature, and the heat can be transferred to the liquid storage tank 22, and the etching liquid in the liquid storage tank 22 is preheated. The chemical waste liquid that completes the heat exchange enters the processing box 2 through the recovery pipe 23 for recovery and treatment. When the etching liquid in the isolation chamber is drained, continue to start the pump 4 and send the next wave of etching liquid into the isolation chamber.

[0047] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device.

[0048] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. An etching device based on semiconductor processing, comprising a support box (1), a processing box (2) and an etching box (3), wherein a recovery pipe (23) is installed on the left side of the support box (1), one end of the recovery pipe (23) is connected to the processing box (2), and the etching box (3) is installed on the top of the support box (1), characterized in that: The inner cavity of the support box (1) is provided with a liquid storage box (22) and is connected to the processing box (2). A pump (4) is installed on the right side of the liquid storage box (22). A connecting pipe (5) is fixedly connected to the drainage end of the pump (4). One end of the connecting pipe (5) is connected to the etching box (3). An etching groove (6) is provided on the top of the etching box (3). The inner wall of the etching groove (6) is provided with a plurality of groups of placement grooves (7) at equal intervals horizontally. A wafer (8) is placed inside the placement groove (7), a plurality of groups of liquid passage ports (14) and liquid drainage grooves (21) are provided at the bottom of the etching groove (6) and are horizontally and equidistantly distributed, the liquid passage ports (14) and the placement groove (7) are interlaced with each other, a transfer chamber (15) is provided inside the etching box (3) and is located below the liquid passage ports (14), the transfer chamber (15) is communicated with the liquid passage ports (14), and a reinforcing member is installed on the inner wall of the transfer chamber (15). The heater (16) comprises a plurality of isolation plates (9) fixedly mounted on the inner wall of the etching groove (6), the isolation plates (9) being connected and arranged at the top of the liquid port (14), the isolation plates (9) being provided with a plurality of drainage ports (10) on the side facing the wafer (8), the inner wall of the isolation plate (9) being sealed and clamped with a sealing plate 1 (12), the side of the sealing plate 1 (12) being provided with a plurality of liquid inlet grooves (13), the drainage ports (10) and the liquid inlet grooves (13) being alternately arranged up and down, the right side of the etching box (3) being provided with a replenishing port (17) connected with the transfer chamber (15), the right side of the inner wall of the heater (16) being elastically connected with a spring 2 (20), one end of the spring 2 (20) being elastically connected with a connecting block (18), the right side of the connecting block (18) being fixedly connected with a sealing block (19), the sealing block (19) being adapted to abut against the replenishing port (17).

2. The etching equipment based on semiconductor processing according to claim 1, characterized in that: The number of drainage grooves (21) in each group is two, and they are symmetrically distributed on both sides of each group of wafers (8). The bottom opening of the drainage grooves (21) penetrates downward to the bottom of the etching box (3) and is connected to the inner cavity of the support box (1).

3. The etching equipment based on semiconductor processing according to claim 2, characterized in that: The top of the support box (1) is provided with a recovery port (25) which is in communication with the bottom opening of the drainage trough (21); a telescopic rod (26) is fixedly installed on the top of the rear side of the inner wall of the support box (1); the telescopic end of the telescopic rod (26) is fixedly connected to a sealing plate 2 (24); the top of the sealing plate 2 (24) abuts against the bottom of the inner wall of the support box (1) and forms a seal for the recovery port (25).

4. The etching equipment based on semiconductor processing according to claim 3, characterized in that: A plurality of groups of springs (11) are elastically connected between the bottom of the inner wall of the isolation plate (9) and the top of the sealing plate (12), and the liquid inlet groove (13) and the liquid outlet (10) are both located on the upper side of the surface of the wafer (8).

5. The etching equipment based on semiconductor processing according to claim 4, characterized in that: The inner cavity of the etching groove (6) is divided into isolation chambers of the same number as the wafers (8) at equal distances by a plurality of isolation plates (9), and the isolation chambers are connected to the inner cavity of the support box (1) via a drainage trough (21).

6. The etching equipment based on semiconductor processing according to claim 5, characterized in that: The second spring (20) is stretched and arranged between the connecting block (18) and the inner wall of the transfer chamber (15); the sealing block (19) is in the shape of a sphere; and the diameter of the sealing block (19) is greater than the inner diameter of the supplementary port (17).

7. The etching equipment based on semiconductor processing according to claim 6, characterized in that: The longitudinal cross-section of the second sealing plate (24) is in an "L" shape, and the horizontal portion of the second sealing plate (24) is wider than the front-to-back spacing of the inner wall of the recovery port (25).

8. The etching equipment based on semiconductor processing according to claim 7, characterized in that: The liquid storage box (22) is made of Teflon, and a gap is left between the left side of the liquid storage box (22) and the left side of the inner wall of the support box (1).

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