Flow control method and device, storage medium and semiconductor processing equipment

Abstract

The invention discloses a flow control method and device, a storage medium and semiconductor processing equipment. The flow control method comprises the steps that a second switch valve is switched on, a first switch valve is switched off, and the first actual flow of preset gas in a gas pipeline is detected when a flow controller is set to be the first current preset target flow; the second switch valve is switched off, the first switch valve is switched on, and the current equivalent flow of the preset gas in the gas pipeline is detected when the flow controller is set to be the first current preset target flow; calculating current temperature change values of the reaction chamber and the virtual chamber; calculating a first flow correction coefficient of a flow controller according to the first current preset target flow and the first actual flow; calculating a second flow correction coefficient of the flow controller according to the current temperature change value; and correcting the first current preset target flow of the flow controller by adopting the first flow correction coefficient and the second flow correction coefficient. The problem that the thickness of the etched film changes can be solved, and the first sheet effect is restrained.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a flow control method, a control device, a storage medium and a semiconductor processing equipment. Background Art

[0002] The pretreatment chamber is used to remove the silicon oxide layer on the surface of the substrate and plays a vital role in the field of logic process. In the application of epitaxial equipment, the pretreatment chamber is idle for a long time. This is mainly because the process time of the epitaxial chamber is much longer than the process time of the pretreatment chamber, which makes the pretreatment chamber idle most of the time in the entire process. After the pretreatment chamber is idle for a long time, the first wafer effect will appear, that is, there are significant differences between the first few wafers and the subsequent wafers after pretreatment. For example, the corresponding etching film thickness will change significantly. Summary of the invention

[0003] In response to the above technical problems, the present application provides a flow control method, a control device, a storage medium and a semiconductor processing equipment, which can improve the problem of changes in etching film thickness due to the first-wafer effect when performing wafer preprocessing in the existing preprocessing chamber.

[0004] To solve the above technical problems, in a first aspect, an embodiment of the present application provides a flow control method applied to a semiconductor device, wherein the semiconductor device comprises: a reaction chamber, a virtual chamber, an air intake pipeline connected to both the reaction chamber and the virtual chamber, a flow controller arranged on the air intake pipeline, a first switch valve located between the flow controller and the reaction chamber, and a second switch valve located between the flow controller and the virtual chamber, wherein the air intake pipeline is used to receive a preset gas; the flow control method comprises:

[0005] After the reaction chamber is in the idle state for a time greater than a set value and before the reaction chamber changes from the idle state to the working state:

[0006] The second switch valve is turned on, and the first switch valve is turned off, and a first actual flow rate of the preset gas in the gas pipeline is detected when the flow controller is set to a first current preset target flow rate;

[0007] The second switch valve is disconnected, and the first switch valve is turned on, and the current equivalent flow of the preset gas in the gas pipeline is detected when the flow controller is set to the first current preset target flow;

[0008] Calculating current temperature change values ​​of the reaction chamber and the virtual chamber according to the first actual flow rate and the current equivalent flow rate;

[0009] Calculate a first flow correction coefficient of the flow controller according to the first current preset target flow and the first actual flow; calculate a second flow correction coefficient of the flow controller according to the current temperature change value;

[0010] After the reaction chamber changes from the idle state to the working state, the first flow correction coefficient and the second flow correction coefficient are used to correct the first current preset target flow of the flow controller.

[0011] Optionally, the semiconductor device further includes: an exhaust pipeline connected to both the reaction chamber and the virtual chamber, a gas extraction device connected to the exhaust pipeline, a third switch valve located between the gas extraction device and the reaction chamber, and a fourth switch valve located between the gas extraction device and the virtual chamber; the detecting of the first actual flow rate of the preset gas in the gas pipeline when the flow controller is set to the first current preset target flow rate specifically includes:

[0012] The third switch valve is disconnected, and the fourth switch valve is turned on, so as to pump the virtual chamber to an initial target pressure;

[0013] Filling the virtual chamber with the preset gas when the flow controller is set to the first current preset target flow rate, and recording a first temperature and a first filling time in the virtual chamber when the pressure in the virtual chamber reaches a first target pressure;

[0014] Repeat the measurement N times, where N≥1, and calculate the first actual flow rate Fr0 according to the first target pressure, the first temperature, and the first inflation time measured N times, where: P1 n represents the first target pressure measured for the nth time, T1 n represents the first temperature measured at the nth time, t1 n represents the first inflation time measured for the nth time.

[0015] Optionally, the detecting the current equivalent flow of the preset gas in the gas pipeline when the flow controller is set to the first current preset target flow specifically includes:

[0016] Determine a current standard temperature Ts0 corresponding to the first current preset target flow rate according to a first functional relationship between a first preset target flow rate and a standard temperature of the reaction chamber established in advance and the first current preset target flow rate, wherein the standard temperature is a temperature of the reaction chamber when a process is performed at the first preset target flow rate under the working state;

[0017] The second switch valve is disconnected, the first switch valve is turned on, and the preset gas is filled into the reaction chamber when the flow controller is set to the first current preset target flow rate, until the pressure in the reaction chamber reaches the preset second target pressure, and the filling time is recorded, and the measurement is repeated M times, where M≥1, and the current equivalent flow corresponding to the first current preset target flow rate Fs0 is calculated based on the M measurements P2 m represents the second target pressure measured at the mth time, t2 m represents the inflation time measured for the mth time.

[0018] Optionally, calculating the current temperature change value of the reaction chamber and the virtual chamber according to the first actual flow rate and the current equivalent flow rate specifically includes:

[0019] Calculating a current equivalent flow change value according to the current equivalent flow and the first actual flow;

[0020] According to a pre-established second functional relationship between the temperature change and the equivalent flow change value and the current equivalent flow change value, a current temperature change value corresponding to the current equivalent flow change value is determined.

[0021] Optionally, calculating the second flow correction coefficient of the flow controller according to the current temperature change value specifically includes:

[0022] Determine a first actual flow rate change value corresponding to the current temperature change value according to a third functional relationship between the temperature change value pre-established in the working state and the first actual flow rate change value of the preset gas and the current temperature change value;

[0023] The second flow correction coefficient is calculated according to the first actual flow change value and the first actual flow.

[0024] Optionally, when the preset gas is a process gas, the method for establishing the third functional relationship includes:

[0025] In the working state and with the flow controller setting value being constant, pre-treating the wafer at different standard temperatures, and recording the thickness changes of the film layer on the surface of the wafer at different standard temperatures, respectively, to establish a fourth functional relationship between the temperature change value and the film thickness change value;

[0026] Under the working state and constant standard temperature, pre-treating the wafer with different actual flow rates of process gas, and recording the thickness changes of the film layer on the surface of the wafer under different actual flow rates of process gas, so as to establish a fifth functional relationship between the change value of the actual flow rate of process gas and the change value of film thickness;

[0027] The third functional relationship is determined according to the fourth functional relationship and the fifth functional relationship.

[0028] Optionally, when the preset gas is a carrier gas, after calculating the current temperature change value of the reaction chamber and the virtual chamber according to the first actual flow rate and the current equivalent flow rate, the method further includes:

[0029] Calculating a third flow correction coefficient of the flow controller according to the current temperature change value;

[0030] The first current preset target flow of the flow controller is corrected using the third flow correction coefficient.

[0031] Optionally, calculating a third flow correction coefficient of the flow controller according to the current temperature change value specifically includes:

[0032] Determining a second actual flow rate of the flow controller when the flow controller is set to a second current preset target flow rate;

[0033] Determine a second actual flow rate change value corresponding to the current temperature change value according to a sixth functional relationship between the temperature change value pre-established in the working state and the second actual flow rate change value of the carrier gas and the current temperature change value;

[0034] The third flow correction coefficient is calculated according to the second actual flow change value and the second actual flow.

[0035] Optionally, when the preset gas is a carrier gas, the method for establishing the sixth functional relationship includes:

[0036] In the working state and with the flow controller setting value being constant, pre-treating the wafer at different standard temperatures, and recording the changes in uniformity of film thickness on the wafer surface at different standard temperatures, respectively, to establish a seventh functional relationship between the temperature change value and the film thickness uniformity change value;

[0037] In the working state and at a constant standard temperature, the wafer is pre-treated with different actual carrier gas flow rates, and the change in uniformity of film thickness on the wafer surface under different actual carrier gas flow rates is recorded respectively, so as to establish an eighth functional relationship between the change value of the actual carrier gas flow rate and the change value of the film thickness uniformity;

[0038] The sixth functional relationship is determined according to the seventh functional relationship and the eighth functional relationship.

[0039] In a second aspect, an embodiment of the present application provides a control device for controlling semiconductor process equipment, the control device comprising at least one processor and at least one memory, wherein at least one program is stored in the memory;

[0040] When the at least one program is executed by the at least one processor, the at least one processor implements the flow control method described in the above embodiments.

[0041] In a third aspect, an embodiment of the present application provides a computer-readable storage medium for semiconductor processing equipment, on which a computer program is stored, and when the program is executed by a processor, the flow control method described in the above embodiments is implemented.

[0042] In a fourth aspect, an embodiment of the present application provides a semiconductor processing device, including:

[0043] a reaction chamber;

[0044] Virtual chamber;

[0045] an air inlet pipeline, connected to both the reaction chamber and the virtual chamber, for receiving a preset gas and introducing the preset gas into the reaction chamber or the virtual chamber;

[0046] A flow controller, arranged on the air intake pipeline;

[0047] A first switch valve is disposed between the flow controller and the reaction chamber;

[0048] A second switch valve is provided between the flow controller and the virtual chamber;

[0049] A control device, the control device includes at least one processor and at least one memory, wherein at least one program is stored in the memory; when the at least one program is executed by the at least one processor, the at least one processor implements the flow control method described in the above embodiments.

[0050] As described above, the flow control method of the present application first measures the first actual flow of the preset gas in the gas pipeline when the flow controller is set to the first current preset target flow through the virtual chamber, thereby calculating the first flow correction coefficient. Then the current equivalent flow is measured by the reaction chamber, and the current temperature change value of the reaction chamber is reversed. The current temperature change value is one of the reasons for inducing flow change, so the current temperature change value can be converted into the change of the actual flow generated, and combined with the first actual flow, the second flow correction coefficient of the flow controller can be calculated. Finally, after the reaction chamber changes from the idle state to the working state, the first flow correction coefficient and the second flow correction coefficient can be used to correct the first current preset target flow of the flow controller, so that both the temperature change and the flow change are converted into controllable flow changes, thereby improving the process stability and solving the problem of etching film thickness change. The present application can make up for the influence of the temperature change of the reaction chamber and the actual flow change of the flow controller (MFC), effectively curb the first piece effect, and improve the process stability. BRIEF DESCRIPTION OF THE DRAWINGS

[0051] The drawings herein are incorporated into the specification and constitute a part of the specification, illustrate embodiments consistent with the present application, and are used together with the specification to explain the principles of the present application. In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the description of the embodiments are briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without creative labor.

[0052] Figure 1 It is a schematic diagram of the air intake control structure of the pre-treatment chamber in the related art;

[0053] Figure 2 It is a structural schematic diagram of a pre-treatment chamber of the related technology;

[0054] Figure 3 It is a schematic diagram of a flow control structure of a semiconductor processing device provided in an embodiment of the present application;

[0055] Figure 4 It is a flow chart of a flow control method provided in an embodiment of the present application;

[0056] Figure 5 It is a flowchart of a first actual flow detection method provided in an embodiment of the present application;

[0057] Figure 6 This is a flow chart of a current equivalent flow detection method provided in an embodiment of the present application.

[0058] Figure 7It is a flow chart of a method for detecting a current temperature change value provided in an embodiment of the present application;

[0059] Figure 8 It is a schematic diagram of a relationship between temperature change and equivalent flow rate change (second functional relationship) provided in an embodiment of the present application;

[0060] Fig. 9 It is a flow chart of a method for calculating a second flow correction coefficient provided in an embodiment of the present application;

[0061] Fig.10 It is a flowchart of a method for establishing a third functional relationship provided in an embodiment of the present application;

[0062] Fig.11 is a schematic diagram of a relationship between temperature change and film thickness change (fourth functional relationship) provided in an embodiment of the present application;

[0063] Fig.12 This is a schematic diagram of the relationship between actual flow rate change and film thickness change (fifth functional relationship) provided in the embodiment of the present application.

[0064] Fig.13 It is a schematic diagram of a relationship between temperature change and actual flow change (third functional relationship) provided in an embodiment of the present application;

[0065] Fig.14 It is a schematic diagram of the relationship between actual flow rate change and equivalent flow rate change provided in an embodiment of the present application;

[0066] Fig.15 It is a flow chart of a method for calculating a third flow correction coefficient provided in an embodiment of the present application;

[0067] Fig.16 is a schematic diagram of a relationship between temperature change and film thickness uniformity change (seventh functional relationship) provided in an embodiment of the present application;

[0068] Fig.17 It is a schematic diagram of the relationship between actual flow rate change and film thickness uniformity change (eighth functional relationship) provided in an embodiment of the present application.

[0069] The realization of the purpose, functional features and advantages of this application will be further described in conjunction with the embodiments and with reference to the accompanying drawings. The above-mentioned drawings have shown clear embodiments of this application, which will be described in more detail later. These drawings and textual descriptions are not intended to limit the scope of the concept of this application in any way, but to illustrate the concept of this application to those skilled in the art by referring to specific embodiments. DETAILED DESCRIPTION

[0070] Exemplary embodiments will be described in detail herein, examples of which are shown in the accompanying drawings. When the following description refers to the drawings, the same numbers in different drawings represent the same or similar elements unless otherwise indicated. The implementations described in the following exemplary embodiments do not represent all implementations consistent with the present application. Instead, they are merely examples of devices and methods consistent with some aspects of the present application as detailed in the appended claims.

[0071] It should be noted that, in this article, the terms "include", "comprises" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "includes a ..." does not exclude the existence of other identical elements in the process, method, article or device including the element. In addition, components, features, and elements with the same name in different embodiments of the present application may have the same meaning or different meanings, and their specific meanings need to be determined by their explanation in the specific embodiment or further combined with the context of the specific embodiment.

[0072] It should be further understood that the terms "comprising" and "including" indicate the presence of the described features, steps, operations, elements, components, items, kinds, and / or groups, but do not exclude the presence, occurrence or addition of one or more other features, steps, operations, elements, components, items, kinds, and / or groups. The terms "or", "and / or", "including at least one of the following", etc. used in this application may be interpreted as inclusive, or mean any one or any combination. For example, "including at least one of the following: A, B, C" means "any one of the following: A; B; C; A and B; A and C; B and C; A and B and C", and for another example, "A, B or C" or "A, B and / or C" means "any one of the following: A; B; C; A and B; A and C; B and C; A and B and C". Exceptions to this definition will only occur when the combination of elements, functions, steps or operations is inherently mutually exclusive in some way.

[0073] It should be understood that although the terms first, second, third, etc. may be used herein to describe various information, such information should not be limited to these terms. These terms are only used to distinguish information of the same type from each other. For example, without departing from the scope of this document, the first information may also be referred to as the second information, and similarly, the second information may also be referred to as the first information. Depending on the context, as used herein, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless otherwise indicated in the context.

[0074] It should be understood that the orientations or positional relationships indicated by terms such as "top", "bottom", "up", "down", "vertical", and "horizontal" are based on the orientations or positional relationships shown in the accompanying drawings and are only for the convenience of describing the present application and simplifying the description. They do not indicate or imply that the device referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0075] For ease of description, in the following embodiments, the orthogonal space formed by the horizontal plane and the vertical direction is used as an example for explanation, and this premise should not be understood as a limitation to the present application.

[0076] See also Figure 1 , Figure 1 It is a schematic diagram of the air intake control structure of the pretreatment chamber in the related art. The gas supply device (Facility) 10a provides two gases (Gas 1 and Gas 2) to the pretreatment chamber (Chamber) 20a. Gas 1 flows through the first flow control valve (PVin1) 31a, the first flow meter (MFC1) 41a, the first air intake valve (PV1A) 51a, the pretreatment chamber 20a, the exhaust valve (PV90) and the exhaust device (Exhaust) 70a in sequence. Gas 2 flows through the second flow control valve (PVin2) 32a, the second flow meter (MFC2) 42a, the second air intake valve (PV2A) 52a, the pretreatment chamber 20a, the exhaust valve (PV90) and the exhaust device (Exhaust) 70a in sequence.

[0077] See also Figure 2 , Figure 2 It is a structural schematic diagram of a pretreatment chamber of the related technology, the pretreatment chamber 20a includes a chamber body 21a, a first thermometer 22a is built into the top wall of the chamber body 21a, and a second thermometer 23a is built into the side wall of the chamber body 21a. The first thermometer 22a and the second thermometer 23a can be thermocouples for real-time detection of the temperature of the pretreatment chamber 20a.

[0078] As mentioned above, the first-piece effect will occur after the pretreatment chamber 20a is idle for a long time. The applicant has found through research that the main reason for this change is that some gases (such as HF) are easy to condense, and the effective flow rate entering the pretreatment chamber 20a changes, resulting in the actual flow rate of the gas entering the pretreatment chamber 20a being unequal to the preset flow rate. Another main reason is that the temperature of the pretreatment chamber 20a changes to a certain extent after being idle for a long time. Therefore, when the pretreatment chamber 20a enters the working state after being idle for a long time, it is necessary to compensate for the gas flow rate and the temperature in the pretreatment chamber 20a.

[0079] However, in the structure and control scheme of the above-mentioned pretreatment chamber 20a, the flow rate is completely controlled by the flowmeter. When the gas condenses, the actual flow rate is less than the flow rate of the flowmeter. Therefore, the flowmeter cannot accurately know the change of flow rate in the first-piece effect. And because the pretreatment chamber 20a is a high-intensity electromagnetic radiation environment, the first thermometer 22a and the second thermometer 23a cannot be directly set in the chamber body 21a, which causes the temperature detected by the first thermometer 22a and the second thermometer 23a to be different from the gas temperature in the pretreatment chamber 20a, and the temperature measurement is not accurate enough. Based on this, the present application provides a flow control method, a control device, a storage medium and a semiconductor processing equipment to provide accurate flow compensation and temperature compensation when the pretreatment chamber 20a enters the working state after being idle for a long time, so as to improve the uniformity of film thickness.

[0080] First, the application environment of the flow control method of this application is described. Figure 3 , Figure 3 It is a schematic diagram of a flow control structure of a semiconductor processing device provided by an embodiment of the present application, and the semiconductor device may include: a reaction chamber (Chamber) 10, a virtual chamber (FVB) 20, an air intake pipeline 30 connected to both the reaction chamber 10 and the virtual chamber 20, a flow controller 33 arranged on the air intake pipeline 30, a first switch valve 31 located between the flow controller 33 and the reaction chamber 10, and a second switch valve 32 located between the flow controller 33 and the virtual chamber 20. The air intake pipeline 30 is used to receive a preset gas. For example, the air intake pipeline 30 is connected to an external gas supply device (Facility) 60, and a fifth switch valve 50 may be arranged between the gas supply device 60 and the flow controller 33. The preset gas may be a process gas or a carrier gas.

[0081] Taking the case where the air intake pipeline 30 includes two gas paths (Gas 1 and Gas 2) as an example, the first gas path (Gas 1) is introduced through the first air intake pipeline 30A, and the second gas path (Gas 2) is introduced through the second air intake pipeline 30B.

[0082] The path for the gas supply device 60 to supply gas to the reaction chamber 10 is as follows: the first gas flows through the fifth switch valve (PVin1) 51, the flow controller (MFC1) 331, the first switch valve (PV1A) 311 in sequence, and enters the reaction chamber 10; the second gas flows through the fifth switch valve (PVin2) 52, the flow controller (MFC2) 332, the first switch valve (PV2A) 312 in sequence, and enters the virtual chamber 20.

[0083] The path for the gas supply device 60 to supply gas to the virtual chamber 20 is as follows: the first gas flows through the fifth switch valve (PVin1) 51, the flow controller (MFC1) 331, the second switch valve (PV1B) 321 in sequence, and enters the reaction chamber 10; the second gas flows through the fifth switch valve (PVin2) 52, the flow controller (MFC2) 332, the second switch valve (PV2B) 322 in sequence, and enters the virtual chamber 20.

[0084] Understandably, Figure 3 The flow control structure can be expanded to provide more than three gas paths, which will not be described in detail in this embodiment.

[0085] It should be noted that the virtual chamber 20 in the present application is a dummy chamber, which is used to be equivalent to the reaction chamber 10 without temperature change. Unlike the reaction chamber 10, the virtual chamber 20 can directly and accurately measure the pressure and temperature of the gas entering it.

[0086] Based on the semiconductor device with the flow control structure described above, the present application embodiment provides a flow control method, and its flow chart is shown in FIG. Figure 4 , the flow control method is applied after the reaction chamber 10 is in an idle state for a time greater than the set value, and before the reaction chamber 10 changes from the idle state to the working state. For example, the time setting value is 30 minutes, then when the reaction chamber 10 is in an idle state for a time greater than 30 minutes, the flow control method can be executed. It should be noted that the working state means that the reaction chamber 10 is in a stable state. At this time, the flow of the flow controller 33 and the temperature of the reaction chamber 10 are both the target set values, and no compensation calibration is required. Preferably, the flow control method can be executed when the semiconductor processing equipment is in an idle state, so as not to affect the production capacity.

[0087] The flow control method may include S110 - S150 .

[0088] S110, the second switch valve 32 is turned on, the first switch valve 31 is turned off, and the detection flow controller 33 is set to the first actual flow Fr0 of the preset gas in the gas pipeline when the first current preset target flow Fs0.

[0089] When the second switch valve 32 is turned on and the first switch valve 31 is turned off, the preset gas can be introduced into the virtual chamber 20 , and the actual flow rate of the preset gas can be measured through the virtual chamber 20 .

[0090] For example, a temperature detection module and a pressure detection module may be provided in the virtual chamber 20 to measure the temperature T of the gas in the virtual chamber 20 and the filling time t when the pressure of the preset gas entering the virtual chamber 20 reaches P, thereby calculating the actual flow rate F of the preset gas. The calculation formula of the actual flow rate F is as follows:

[0091] F=P*C / (T*t)(1)

[0092] Wherein, C is the gas constant. In the following embodiments, the measurement of one of the gases is used as an example for explanation, and the measurement of other gases is also applicable. Taking the first gas Gas 1 as an example, the flow controller 331 is set to the first current preset target flow Fs0, the second switch valve 321 is controlled to be turned on, and the first switch valve 311 is turned off, then the first gas Gas 1 can be introduced into the virtual chamber 20, and the virtual chamber 20 can measure the first actual flow Fr0 of the preset gas.

[0093] S120, the second switch valve 32 is disconnected, the first switch valve 31 is turned on, and the flow controller 33 is detected to be set to the current equivalent flow Fe0 of the preset gas in the gas pipeline when the first current preset target flow Fs0.

[0094] For example, after obtaining the first actual flow rate Fr0 of the preset gas, the second switch valve 321 can be controlled to be disconnected and the first switch valve 311 can be turned on, so that the first gas Gas 1 can be introduced into the reaction chamber 10, which can be detected by the reaction chamber 10 and calculated to obtain the current equivalent flow rate Fe0 of the preset gas in the gas pipeline when the flow controller 33 is set to the first current preset target flow rate Fs0.

[0095] It should be noted that, due to being in an idle state for a long time, the temperature of the reaction chamber 10 may have changed greatly, and there is a difference with the actual target temperature. The current equivalent flow rate Fe0 is the flow rate in the gas pipeline 30A under the first current preset target flow rate Fs0 set by the flow controller 33 assuming that the temperature of the reaction chamber 10 has not changed during the idle time. Therefore, when the idle time is long, the current equivalent flow rate Fe0 is generally not equal to the first actual flow rate Fr0.

[0096] S130 , calculating the current temperature change value ΔT0 of the reaction chamber 10 and the virtual chamber 20 according to the first actual flow rate Fr0 and the current equivalent flow rate Fe0 .

[0097] Since the current equivalent flow rate Fe0 is the superposition of the first actual flow rate Fr0 and the chamber temperature change induced amount, the embodiment of the present application calculates the current temperature change value ΔT0 of the reaction chamber 10 and the virtual chamber 20 based on the first actual flow rate Fr0 and the current equivalent flow rate Fe0, that is, the current temperature change value ΔT0 of the reaction chamber 10 and the virtual chamber 20 is reversed by the difference between the current equivalent flow rate Fe0 and the first actual flow rate Fr0.

[0098] S140, calculating a first flow correction coefficient f1 of the flow controller 33 according to the first current preset target flow Fs0 and the first actual flow Fr0; calculating a second flow correction coefficient of the flow controller 33 according to the current temperature change value ΔT0.

[0099] After calculating the first actual flow Fr0 of the preset gas in the gas pipeline when the flow controller 33 is set to the first current preset target flow Fs0 in step S110, the first flow correction coefficient f1=Fr0 / Fs0 of the flow controller 33 can be obtained. The first flow correction coefficient can correct the flow change caused by gas condensation.

[0100] After the current temperature change value ΔT0 is inverted in step S130, the current temperature change value ΔT0 can be converted into the actual flow change, and combined with the first actual flow Fr0, the second flow correction coefficient f2 of the flow controller 33 can be calculated. The second flow correction coefficient f2 can correct the flow change caused by the temperature change in the reaction chamber 10 due to the idle time being too long.

[0101] S150, after the reaction chamber 10 changes from the idle state to the working state, the first flow correction coefficient and the second flow correction coefficient are used to correct the first current preset target flow of the flow controller 33.

[0102] When the reaction chamber 10 changes from an idle state to a working state, the first flow correction coefficient f1 and the second flow correction coefficient f2 can be used to correct the first current preset target flow of the flow controller 33. For example, if the flow captured from the menu is Fset, the relationship between the flow Fpoint1 and Fset sent to the flow controller 33 during the actual process is: Fpoint1 = Fset*f1*f2.

[0103] As described above, the flow control method of the present application first measures the first actual flow Fr0 of the preset gas in the gas pipeline when the flow controller is set to the first current preset target flow Fs0 through the virtual chamber 20, thereby calculating the first flow correction coefficient f1=Fr0 / Fs0. Then the current equivalent flow Fe0 is measured by the reaction chamber 10, and the current temperature change value ΔT0 of the reaction chamber 10 is inferred. The current temperature change value ΔT0 is one of the reasons for inducing flow changes, so the current temperature change value ΔT0 can be converted into the actual flow change, and combined with the first actual flow Fr0, the second flow correction coefficient f2 of the flow controller 33 can be calculated. Finally, after the reaction chamber changes from the idle state to the working state, the first flow correction coefficient and the second flow correction coefficient can be used to correct the first current preset target flow of the flow controller, so that both temperature changes and flow changes are converted into controllable flow changes, thereby improving process stability and solving the problem of etching film thickness changes.

[0104] The present application can correct the gas flow rate when the reaction chamber 10 enters the working state after being idle for a long time, so as to avoid the problem that the actual gas flow rate is too different from the target value due to gas condensation factors and temperature changes in the reaction chamber 10, which causes the wafer processing film thickness to change. Through flow correction, the present application can compensate for the influence of temperature changes in the reaction chamber 10 and actual flow changes of the flow controller (MFC), effectively curb the first wafer effect, and improve process stability.

[0105] As an example of the detection of the first actual flow rate Fr0, please continue to refer to Figure 3 The semiconductor device may further include: an exhaust pipeline 40 connected to both the reaction chamber 10 and the virtual chamber 20, an exhaust device 43 connected to the exhaust pipeline 40, a third switch valve 41 located between the exhaust device 43 and the reaction chamber 10, and a fourth switch valve 42 located between the exhaust device 43 and the virtual chamber 20. The third switch valve 41 can control the exhaust of the reaction chamber 10, and the fourth switch valve 42 can control the exhaust of the virtual chamber 20. Please refer to Figure 5 , Figure 5 It is a flow chart of a method for detecting a first actual flow rate provided in an embodiment of the present application. When the flow controller 33 is set to the first current preset target flow rate Fs0, the first actual flow rate Fr0 of the preset gas in the gas pipeline is detected. The method for detecting the first actual flow rate may specifically include S111-S113.

[0106] S111 , the third switch valve 41 is turned off, and the fourth switch valve 42 is turned on, so that the virtual chamber 20 is evacuated to the initial target pressure P0 .

[0107] When the preset gas is introduced into the virtual chamber 20, the virtual chamber 20 may be first evacuated to a certain vacuum degree, that is, to an initial target pressure P0. For example, the third switch valve 41 is disconnected, the fourth switch valve 42 is turned on, the virtual chamber 20 is connected to the gas extraction device 43, and then the gas extraction device 43 is controlled to evacuate the virtual chamber 20 until the pressure of the virtual chamber 20 reaches the initial target pressure P0. The initial target pressure P0 may correspond to the vacuum degree of the reaction chamber 10 when the semiconductor process is performed.

[0108] S112, charging the virtual chamber 20 with a preset gas when the flow controller 33 is set to the first current preset target flow Fs0, and recording the first temperature T1 and the first charging time t1 in the virtual chamber 20 when the pressure in the virtual chamber 20 reaches the first target pressure P1.

[0109] For example, the flow controller 331 can be set to the first current preset target flow Fs0, the second switch valve 321 is opened, the fourth switch valve 42 is disconnected, and then the preset gas is charged into the virtual chamber 20. When the pressure in the virtual chamber 20 reaches the first target pressure P1, the first temperature T1 and the first charging time t1 in the virtual chamber 20 are recorded. The first target pressure P1 is arbitrarily set, and can be equal to the pressure value of the reaction chamber 10 during the normal process, or can be less than or greater than the pressure value of the virtual chamber 20 during the normal process, as long as it does not exceed the pressure limit that the reaction chamber 10 can withstand.

[0110] S113, repeat the measurement N times, where N≥1, and calculate the first actual flow rate Fr0 according to the first target pressure, the first temperature and the first inflation time measured N times, where: P1 n represents the first target pressure measured for the nth time, T1 n represents the first temperature measured at the nth time, t1 n represents the first inflation time measured for the nth time.

[0111] The first actual flow rate Fr0 can be calculated based on a single measurement result, or an average value can be calculated based on multiple measurement results. It should be noted that when multiple measurements are taken, the first target pressure P1 for each inflation can be set to a different value. After a measurement is taken, the second switch valve 321 can be disconnected, the fourth switch valve 42 can be turned on, the virtual chamber 20 can be pumped to the initial target pressure P0 again, and then the pumping step of S112 can be repeated. After measuring N times, the actual flow rate obtained from each measurement can be calculated according to formula (1). The first actual flow rate Fr0 is the average value of the N actual flow rates, and the calculation method is as follows:

[0112]

[0113] In one embodiment, see Figure 6 , Figure 6 It is a flow chart of a method for detecting a current equivalent flow rate Fe0 provided in an embodiment of the present application. The method for detecting the current equivalent flow rate Fe0 may specifically include S121-S122.

[0114] S121. Determine the current standard temperature Ts0 corresponding to the first current preset target flow rate Fs0 according to the first functional relationship Fs=f(Ts) between the first preset target flow rate Fs and the standard temperature Ts of the reaction chamber 10 and the first current preset target flow rate Fs0, wherein the standard temperature Ts is the temperature of the reaction chamber 10 when performing a process at the first preset target flow rate Fs in a working state.

[0115] For example, a first functional relationship Fs=f(Ts) between the first preset target flow rate Fs and the standard temperature Ts of the reaction chamber 10 can be established in advance, wherein the standard temperature Ts is the temperature of the reaction chamber 10 when the process is performed at the first preset target flow rate Fs in the working state, and the standard temperature Ts is the temperature corresponding to the stable process state after the first sheet effect, and no compensation calibration is required. The first functional relationship Fs=f(Ts) can be established as follows:

[0116] First, the flow controller 331 is calibrated. The target flow rate set by the calibrated flow controller 331 at the beginning is equal to the actual flow rate measured by the virtual chamber 20. The flow controller 331 can be set to the first preset target flow rate Fs, and then the gas Gas 1 is filled into the virtual chamber 20 through the gas pipeline 30A, and the filling time t2 when the pressure in the virtual chamber 20 reaches the second target pressure P2 is recorded. The measurement is repeated M times, where M≥1, and the calculation method of the standard temperature Ts is as follows:

[0117]

[0118] Among them, N2 m is the total amount of the gas substance entering the virtual chamber 20 for the mth measurement, and N2 m =Fs*t2 m , t2 m Inflate to the second target pressure P2 for the mth measurement m The time consumed, C2 is the gas constant.

[0119] According to the above method, Fs1, Fs2, and Fs3 can be set respectively, and the corresponding Ts1, Ts2, and Ts3 can be obtained. The first functional relationship Fs=f(Ts) can be obtained through (Fs1, Ts1), (Fs2, Ts2), and (Fs3, Ts3). In order to improve the accuracy, more points can be taken for linear regression. The first functional relationship can be pre-stored in the memory. After setting the first current preset target flow Fs0, the system can automatically calculate the current standard temperature Ts0 according to the first functional relationship.

[0120] S122, the second switch valve 32 is disconnected, the first switch valve 31 is turned on, and the flow controller 33 is set to the first current preset target flow Fs0, and the preset gas is charged into the reaction chamber 10 until the pressure in the reaction chamber 10 reaches the preset second target pressure P2, and the charging time is recorded as t2, and the current equivalent flow corresponding to the first current preset target flow Fs0 is calculated. P2 m represents the second target pressure measured at the mth time, t2 m Indicates the inflation time of the mth measurement.

[0121] For example, after setting the first current preset target flow rate Fs0 and calculating the current standard temperature Ts0, the second switch valve (PV1B) 321 can be controlled to be disconnected, and the first switch valve (PV1A) 311 can be controlled to be turned on, and the preset gas is filled into the reaction chamber 10 through the first gas path (Gas 1). When the pressure in the reaction chamber 10 reaches the preset second target pressure P2, the filling time is recorded as t2, and the current equivalent flow rate can be calculated.

[0122] In one embodiment, see Figure 7 , Figure 7 It is a flow chart of a method for detecting a current temperature change value ΔT0 provided in an embodiment of the present application. The method for calculating the current temperature change value ΔT0 may specifically include S131 - S132 .

[0123] S131. Calculate the current equivalent flow change value ΔF0=Fe0-Fr0 according to the current equivalent flow Fe0 and the first actual flow Fr0.

[0124] S132, determining a current temperature change value ΔT0 corresponding to the current equivalent flow change value ΔF0 according to a pre-established second functional relationship ΔFe=f(ΔT) between the temperature change ΔT and the equivalent flow change value ΔFe and the current equivalent flow change value ΔF0.

[0125] For example, a second functional relationship ΔFe=f(ΔT) between the temperature change ΔT and the equivalent flow change value ΔFe can be established in advance. Specifically, the second functional relationship can be obtained through experiments under the working state. For example, when the temperature measuring thermocouple reading on the side wall of the reaction chamber 10 is T0' (the current temperature in the reaction chamber 10 is T0), the equivalent flow Fe0 of the preset gas is measured according to step S120 (equal to the actual flow at this time); the heating device is controlled to change the temperature of the wall of the reaction chamber 10, and the temperature measuring thermocouple reading is T1' (the current temperature in the reaction chamber 10 is T1), and the equivalent flow Fe1 of the preset gas is measured again (equal to the actual flow at this time), and ΔFe1=Fe1-Fe0 is calculated. When the process is stable, it can be considered that the temperature change of the reaction chamber 10 ΔT1=T1-T0=T1'-T0', that is, it is considered that the temperature change of the wall of the reaction chamber 10 is equivalent to the temperature change of the gas in the chamber. The temperature of the wall of the reaction chamber 10 is continuously changed by the heating device to obtain ΔFe2 and ΔT2, ΔFe3 and ΔT3, and so on, and then a linear regression is performed to obtain a second functional relationship ΔFe=f(ΔT), see Figure 8 , Figure 8 It is a schematic diagram of a temperature change ΔT and an equivalent flow change value ΔFe (a second functional relationship) provided in an embodiment of the present application.

[0126] Then, the current equivalent flow change value ΔF0 is substituted into the second functional relationship ΔFe=f(ΔT), and the current temperature change value ΔT0 corresponding to the current equivalent flow change value ΔF0 is calculated.

[0127] In one embodiment, see Fig. 9 , Fig. 9 It is a flow chart of a method for calculating a second flow correction coefficient provided in an embodiment of the present application. The calculation method may specifically include S141-S142.

[0128] S141. Determine the first actual flow change value ΔFr0 corresponding to the current temperature change value ΔT0 according to the third functional relationship ΔFr=f(ΔT) between the temperature change value ΔT pre-established under the working state and the first actual flow change value ΔFr of the preset gas and the current temperature change value ΔT0.

[0129] For example, a third functional relationship ΔFr=f(ΔT) between the temperature change value ΔT and the first actual flow change value ΔFr of the preset gas can be pre-established in the working state. Specifically, the third functional relationship can be obtained through experiments when the process is stable.

[0130] Then, the current temperature change value ΔT0 calculated in the above step is substituted into the third functional relationship to obtain the corresponding first actual flow change value ΔFr0. ΔFr0 is the actual flow change value of the chamber temperature change induced quantity.

[0131] For example, when the preset gas is process gas, refer to Fig.10 , Fig.10 It is a flowchart of a method for establishing a third functional relationship provided in an embodiment of the present application. The establishment method may specifically include S211-S213.

[0132] S211. In the working state and with the setting value of the flow controller 33 constant, the wafer is pre-treated at different standard temperatures, and the thickness changes of the film layer on the surface of the wafer at different standard temperatures are recorded respectively to establish a fourth functional relationship ΔT=f(ΔThk) between the temperature change value ΔT and the film thickness change value ΔThk.

[0133] For example, under working conditions, at standard temperature T and standard reaction gas flow rate Fr, the temperature measuring thermocouple reading of the reaction chamber 10 is T0', and the film thickness measured by the running process is Thk0; the flow rate is fixed and unchanged, and the heating device is controlled to change the inner wall temperature of the reaction chamber 10 to T1'. At this time, the chamber temperature is T1, so the temperature change in the reaction chamber 10 is ΔT1=T1-T0, and the inner wall temperature change is ΔT1'=T1'-T0'. Assuming that the inner wall temperature change is equivalent to the temperature change in the reaction chamber 10, ΔT1=ΔT1'. Under T1 conditions, the process is run to measure the film thickness Thk1, and the film thickness change ΔThk1=Thk1-Thk0. Continue to change the inner wall temperature to calculate ΔT2 and ΔThk2, ΔT3 and ΔThk3, and so on, and then perform linear regression to obtain the function ΔT=f(ΔThk). Please refer to Fig.11 , Fig.11 It is a schematic diagram of the relationship between temperature change and film thickness change (fourth functional relationship) provided in an embodiment of the present application.

[0134] S212. Under working conditions and a constant standard temperature, pre-treat the wafer with different actual process gas flow rates, and record the thickness changes of the film layer on the wafer surface under different actual process gas flow rates to establish a fifth functional relationship ΔFr=f(ΔThk) between the actual process gas flow change value ΔFr and the film thickness change value ΔThk.

[0135] Similarly, under working conditions, at standard temperature T and standard reaction gas flow Fr, a fifth functional relationship ΔFr=f(ΔThk) can be established. The temperature measuring thermocouple reading in the reaction chamber 10 is T0', and the reaction gas flow is Fr0. At this time, the film thickness measured by the process is Thk0. The temperature is fixed and unchanged, and the flow controller (MFC) controlling the reaction gas is Fr1. Then ΔFr1=Fr1-Fr0. Under this condition, the process is run to measure the film thickness Thk1, and the film thickness change ΔThk1=Thk1-Thk0. Continue to change the MFC flow to calculate ΔFr2 and ΔThk2, ΔFr3 and ΔThk3, and so on, and then perform linear regression to obtain the fifth functional relationship ΔFr=f(ΔThk). Please refer to Fig.12 , Fig.12 It is a schematic diagram of the relationship between an actual flow rate change value ΔFr and a membrane thickness change (the fifth functional relationship) provided in an embodiment of the present application.

[0136] S213 . Determine a third functional relationship ΔFr=f(ΔT) according to the fourth functional relationship ΔT=f(ΔThk) and the fifth functional relationship ΔFr=f(ΔThk).

[0137] After determining the fourth functional relationship ΔT=f(ΔThk) and the fifth functional relationship ΔFr=f(ΔThk), the third functional relationship ΔFr=f(ΔT) between ΔFr and ΔT can be obtained. Fig.13 , Fig.13 It is a schematic diagram of a relationship between temperature change and actual flow change (third functional relationship) provided in an embodiment of the present application;

[0138] Furthermore, by combining the second functional relationship ΔFe=f(ΔT) and the third functional relationship ΔFr=f(ΔT), the functional relationship between the actual flow change and the equivalent flow change can be obtained. Fig.14 , Fig.14 It is a schematic diagram of the relationship between actual flow change and equivalent flow change provided in an embodiment of the present application.

[0139] S142. Calculate a second flow correction coefficient f2 = ΔFr0 / Fr0 according to the first actual flow change value ΔFr0 and the first actual flow Fr0.

[0140] According to the first actual flow rate change value ΔFr0 and the first actual flow rate Fr0 obtained in step S110, the second flow rate correction coefficient f2 = ΔFr0 / Fr0 can be calculated.

[0141] In one embodiment, when the preset gas is a carrier gas, after step S130, steps S160-S170 may be further included.

[0142] S160 , calculating a third flow correction coefficient of the flow controller 33 according to the current temperature change value ΔT0 .

[0143] Since temperature changes will also cause changes in the carrier gas flow rate, the carrier gas flow rate will affect the uniformity of the film thickness, such as causing a large difference between the center film thickness and the edge film thickness. Therefore, this embodiment calculates the third flow correction coefficient of the flow controller 33 according to the current temperature change value ΔT0 to correct the carrier gas flow rate.

[0144] As an example, see Fig.15 , Fig.15 1 is a flow chart of a method for calculating a third flow correction coefficient provided in an embodiment of the present application. The calculation method may include S161-S163.

[0145] S161, measuring the second actual flow rate Fcr0 of the flow rate controller 33 when the flow rate controller 33 is set to the second current preset target flow rate Fs0'.

[0146] The specific implementation of S161 can refer to the implementation of S111-S113 regarding the calculation of the first actual flow Fr0, which will not be repeated here.

[0147] S162. Determine the second actual flow change value ΔFcr0 corresponding to the current temperature change value ΔT0 according to the sixth functional relationship ΔFcr=f(ΔT) between the temperature change value ΔT and the second actual flow change value ΔFcr of the carrier gas pre-established in the working state and the current temperature change value ΔT0.

[0148] For example, a sixth functional relationship ΔFcr=f(ΔT) between the temperature change value ΔT and the second actual flow change value ΔFcr of the carrier gas can be pre-established in the working state, and then the current temperature change value ΔT0 is substituted into the function to obtain the second actual flow change value ΔFcr0.

[0149] For example, the method for establishing the sixth functional relationship ΔFcr=f(ΔT) may include S1621 - S1623 .

[0150] S1621. In the working state and with the flow controller 33 set to a constant value, the wafer is pre-treated at different standard temperatures, and the changes in the uniformity of the film thickness on the wafer surface at different standard temperatures are recorded respectively to establish the seventh functional relationship ΔT=f(ΔThk') between the temperature change value ΔT and the film thickness uniformity change value ΔThk'.

[0151] For example, under working conditions, at standard temperature T and standard reaction gas flow rate Fr, the temperature measuring thermocouple reading of the reaction chamber 10 is T0', and the difference between the center film thickness and the edge film thickness measured by the running process is Thk0_ce; the flow rate is fixed and unchanged, and the heating device is controlled to change the inner wall temperature of the reaction chamber 10 to T1'. At this time, the chamber temperature is T1, so the temperature change in the reaction chamber 10 is ΔT1=T1-T0, and the inner wall temperature change is ΔT1'=T1'-T0'. Assuming that the inner wall temperature change is equivalent to the temperature change in the reaction chamber 10, ΔT1=ΔT1'. When the process is run under T1 conditions, the difference between the center film thickness and the edge film thickness is Thk1_ce, and the change ΔThk1'=Thk1_ce–Thk0_ce. Continue to change the inner wall temperature, calculate ΔT2 and ΔThk2', ΔT3 and ΔThk3', and then perform linear regression to obtain the seventh functional relationship ΔT=f(ΔThk'). Please refer to Fig.16 , Fig.16 It is a schematic diagram of the relationship between temperature change and film thickness uniformity change (seventh functional relationship) provided in an embodiment of the present application.

[0152] S1622. Under working conditions and a constant standard temperature, pre-treat the wafer with different actual carrier gas flow rates, and record the change in film thickness uniformity on the wafer surface under different actual carrier gas flow rates to establish an eighth functional relationship ΔFcr=f(ΔThk') between the actual carrier gas flow rate change value ΔFcr and the film thickness uniformity change value ΔThk'.

[0153] For example, under working conditions, at standard temperature T and standard reaction gas flow rate Fr, the difference between the center film thickness and the edge film thickness measured by the process is Thk0_ce; if the temperature is fixed and the flow controller (MFC) controlling the reaction gas is Fr1, then ΔFr1=Fr1-Fr0, and the difference between the center film thickness and the edge film thickness measured by the process under this condition is Thk1_ce, and the change ΔThk1'=Thk1_ce–Thk0_ce. Continue to change the flow rate of the reaction gas, calculate ΔFr2 and ΔThk2', ΔFr3 and ΔThk3', and so on, and then perform linear regression to obtain the eighth functional relationship ΔFcr=f(ΔThk'). Please refer to Fig.17 , Fig.17 It is a schematic diagram of the relationship between actual flow rate change and film thickness uniformity change (eighth functional relationship) provided in an embodiment of the present application.

[0154] S1623 , determining a sixth functional relationship ΔFcr=f(ΔT) according to the seventh functional relationship ΔT=f(ΔThk′) and the eighth functional relationship ΔFcr=f(ΔThk′).

[0155] After the seventh functional relationship ΔT=f(ΔThk′) and the eighth functional relationship ΔFcr=f(ΔThk′) are determined, a sixth functional relationship ΔFcr=f(ΔT) between ΔFcr and ΔT can be obtained.

[0156] S163. Calculate a third flow correction coefficient f3 = ΔFcr0 / Fcr0 according to the second actual flow change value ΔFcr0 and the second actual flow Fcr0.

[0157] S170 , using a third flow correction coefficient to correct the first current preset target flow of the flow controller 33 .

[0158] When the reaction chamber 10 changes from an idle state to a working state, the third flow correction coefficient can be used to correct the first current preset target flow of the carrier gas flow controller. For example, if the carrier gas flow captured from the menu is Fset_car, the relationship between the flow Fpoint2 and Fset_car sent to the flow controller 33 during the actual process is: Fpoint2 = Fset_car*f3.

[0159] As described above, the flow control method of the present application converts both temperature changes and flow changes into controllable carrier gas flow compensation to offset the effects of temperature changes and flow changes, thereby improving process stability and solving the problem of changes in uniformity of etched film thickness.

[0160] An embodiment of the present application also provides a control device for controlling semiconductor process equipment, the control device comprising at least one processor and at least one memory, wherein at least one program is stored in the memory; when the at least one program is executed by the at least one processor, the at least one processor implements the flow control method described in the above embodiments.

[0161] An embodiment of the present application also provides a computer-readable storage medium for semiconductor processing equipment, on which a computer program is stored, and when the program is executed by a processor, the flow control method described in the above embodiments is implemented.

[0162] The present application also provides a semiconductor processing device. Figure 2, the semiconductor processing equipment may include: a reaction chamber 10, a virtual chamber 20, an air intake line 30, a flow controller 33, a first switch valve 31, a second switch valve 32 and a control device (not shown in the figure). The air intake line 30 is connected to both the reaction chamber 10 and the virtual chamber 20, and is used to receive a preset gas and pass the preset gas into the reaction chamber 10 or the virtual chamber 20; the flow controller 33 is arranged on the air intake line 30; the first switch valve 31 is arranged between the flow controller 33 and the reaction chamber 10; the second switch valve 32 is arranged between the flow controller 33 and the virtual chamber 20; the control device includes at least one processor and at least one memory, and at least one program is stored in the memory; when at least one program is executed by at least one processor, the at least one processor implements the flow control method described in the above embodiments.

[0163] For other working principles and processes of the semiconductor processing equipment of this embodiment, please refer to the description of the flow control method in the aforementioned embodiment of the present invention, which will not be repeated here.

[0164] The above is a detailed introduction to a flow control method, a control device, a storage medium and a semiconductor processing device provided by the present application. This article uses specific examples to illustrate the principles and implementation methods of the present application. It should be noted that in the present application, the descriptions of each embodiment have their own emphasis. For parts that are not described or recorded in detail in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0165] The various technical features of the technical solution of the present application can be arbitrarily combined. In order to make the description concise, not all possible combinations of the various technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of the present application.

[0166] The above are only preferred embodiments of the present application, and are not intended to limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A flow control method applied to semiconductor equipment, characterized in that: The semiconductor device comprises: a reaction chamber, a virtual chamber, an air intake pipeline connected to the reaction chamber and the virtual chamber, a flow controller arranged on the air intake pipeline, a first switch valve located between the flow controller and the reaction chamber, and a second switch valve located between the flow controller and the virtual chamber, wherein the air intake pipeline is used to receive a preset gas; the flow control method comprises: After the reaction chamber is in the idle state for a time greater than a set value and before the reaction chamber changes from the idle state to the working state: The second switch valve is turned on, and the first switch valve is turned off, and a first actual flow rate of the preset gas in the gas pipeline is detected when the flow controller is set to a first current preset target flow rate; The second switch valve is disconnected, and the first switch valve is turned on, and the current equivalent flow of the preset gas in the gas pipeline is detected when the flow controller is set to the first current preset target flow; Calculating current temperature change values ​​of the reaction chamber and the virtual chamber according to the first actual flow rate and the current equivalent flow rate; Calculate a first flow correction coefficient of the flow controller according to the first current preset target flow and the first actual flow; calculate a second flow correction coefficient of the flow controller according to the current temperature change value; After the reaction chamber changes from the idle state to the working state, the first flow correction coefficient and the second flow correction coefficient are used to correct the first current preset target flow of the flow controller.

2. The flow control method according to claim 1, characterized in that: The semiconductor device further comprises: an exhaust pipeline connected to both the reaction chamber and the virtual chamber, a gas extraction device connected to the exhaust pipeline, a third switch valve located between the gas extraction device and the reaction chamber, and a fourth switch valve located between the gas extraction device and the virtual chamber; the detecting of a first actual flow rate of the preset gas in the gas pipeline when the flow controller is set to a first current preset target flow rate specifically comprises: The third switch valve is disconnected, and the fourth switch valve is turned on, so as to pump the virtual chamber to an initial target pressure; Filling the virtual chamber with the preset gas when the flow controller is set to the first current preset target flow rate, and recording a first temperature and a first filling time in the virtual chamber when the pressure in the virtual chamber reaches a first target pressure; Repeat the measurement N times, where N≥1, and calculate the first actual flow rate Fr0 according to the first target pressure, the first temperature, and the first inflation time measured N times, where: P1 n represents the first target pressure measured at the nth time, T1 n represents the first temperature measured at the nth time, t1 n represents the first inflation time measured for the nth time.

3. The flow control method according to claim 1, characterized in that: The detecting the current equivalent flow of the preset gas in the gas pipeline when the flow controller is set to the first current preset target flow specifically includes: Determine a current standard temperature Ts0 corresponding to the first current preset target flow rate according to a first functional relationship between a first preset target flow rate and a standard temperature of the reaction chamber established in advance and the first current preset target flow rate, wherein the standard temperature is a temperature of the reaction chamber when a process is performed at the first preset target flow rate under the working state; The second switch valve is disconnected, the first switch valve is turned on, and the preset gas is filled into the reaction chamber when the flow controller is set to the first current preset target flow rate until the pressure in the reaction chamber reaches the preset second target pressure, and the filling time is recorded, and the measurement is repeated M times, where M≥1, and the current equivalent flow corresponding to the first current preset target flow rate is calculated based on the M measurements P2 m represents the second target pressure measured for the mth time, t2 m represents the inflation time measured for the mth time.

4. The flow control method according to claim 1, characterized in that: The calculating the current temperature change value of the reaction chamber and the virtual chamber according to the first actual flow rate and the current equivalent flow rate specifically includes: Calculating a current equivalent flow change value according to the current equivalent flow and the first actual flow; According to a pre-established second functional relationship between the temperature change and the equivalent flow change value and the current equivalent flow change value, a current temperature change value corresponding to the current equivalent flow change value is determined.

5. The flow control method according to claim 1, characterized in that: Calculating the second flow correction coefficient of the flow controller according to the current temperature change value specifically includes: Determine a first actual flow rate change value corresponding to the current temperature change value according to a third functional relationship between the temperature change value pre-established in the working state and the first actual flow rate change value of the preset gas and the current temperature change value; The second flow correction coefficient is calculated according to the first actual flow change value and the first actual flow.

6. The flow control method according to claim 5, characterized in that: When the preset gas is a process gas, the method for establishing the third functional relationship includes: In the working state and with the flow controller setting value being constant, pre-treating the wafer at different standard temperatures, and recording the thickness changes of the film layer on the surface of the wafer at different standard temperatures, respectively, to establish a fourth functional relationship between the temperature change value and the film thickness change value; Under the working state and constant standard temperature, pre-treating the wafer with different actual flow rates of process gas, and recording the thickness changes of the film layer on the surface of the wafer under different actual flow rates of process gas, so as to establish a fifth functional relationship between the change value of the actual flow rate of process gas and the change value of film thickness; The third functional relationship is determined according to the fourth functional relationship and the fifth functional relationship.

7. The flow control method according to claim 1, characterized in that: When the preset gas is a carrier gas, after calculating the current temperature change values ​​of the reaction chamber and the virtual chamber according to the first actual flow rate and the current equivalent flow rate, the method further includes: Calculating a third flow correction coefficient of the flow controller according to the current temperature change value; The first current preset target flow of the flow controller is corrected using the third flow correction coefficient.

8. The flow control method according to claim 7, characterized in that: Calculating the third flow correction coefficient of the flow controller according to the current temperature change value specifically includes: Determining a second actual flow rate of the flow controller when the flow controller is set to a second current preset target flow rate; Determine a second actual flow rate change value corresponding to the current temperature change value according to a sixth functional relationship between the temperature change value pre-established in the working state and the second actual flow rate change value of the carrier gas and the current temperature change value; The third flow correction coefficient is calculated according to the second actual flow change value and the second actual flow.

9. The flow control method according to claim 8, characterized in that: When the preset gas is a carrier gas, the method for establishing the sixth functional relationship includes: In the working state and with the flow controller setting value being constant, pre-treating the wafer at different standard temperatures, and recording the changes in uniformity of film thickness on the wafer surface at different standard temperatures, respectively, to establish a seventh functional relationship between the temperature change value and the film thickness uniformity change value; In the working state and at a constant standard temperature, the wafer is pre-treated with different actual carrier gas flow rates, and the change in uniformity of film thickness on the wafer surface under different actual carrier gas flow rates is recorded respectively, so as to establish an eighth functional relationship between the change value of the actual carrier gas flow rate and the change value of the film thickness uniformity; The sixth functional relationship is determined according to the seventh functional relationship and the eighth functional relationship.

10. A control device, characterized in that: Used to control semiconductor process equipment, the control device includes at least one processor and at least one memory, and at least one program is stored in the memory; When the at least one program is executed by the at least one processor, the at least one processor implements the flow control method according to any one of claims 1 to 9.

11. A computer-readable storage medium for semiconductor processing equipment, having a computer program stored thereon, characterized in that: When the program is executed by a processor, the flow control method as described in any one of claims 1 to 9 is implemented.

12. A semiconductor processing device, characterized in that: include: a reaction chamber; Virtual chamber; an air inlet pipeline, connected to both the reaction chamber and the virtual chamber, for receiving a preset gas and introducing the preset gas into the reaction chamber or the virtual chamber; A flow controller, arranged on the air intake pipeline; A first switch valve is disposed between the flow controller and the reaction chamber; A second switch valve is provided between the flow controller and the virtual chamber; A control device, the control device comprising at least one processor and at least one memory, wherein at least one program is stored in the memory; when the at least one program is executed by the at least one processor, the at least one processor implements the flow control method as described in any one of claims 1 to 9.

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