Energy-calculation integrated optical calculation chip element based on photovoltaic effect and preparation method and application thereof

Abstract

The invention relates to an energy-calculation integrated optical calculation chip element based on a photovoltaic effect and a preparation method and application thereof, and relates to the technical field of optical calculation and photovoltaics. The component comprises a substrate layer, a conductive electrode, a conductive contact piece, a flexural photovoltaic layer and a photoinduced strain layer, light energy entering the flexural photovoltaic layer is converted into electric energy due to the photovoltaic effect, and the photoinduced strain layer in physical contact with the flexural photovoltaic layer is irradiated by a special light beam to generate strain. The strain of the photoinduced strain layer enables the flexural photovoltaic layer in contact with the photoinduced strain layer to generate local strain regulated and controlled by a light beam, and photocurrent generated by the flexural photovoltaic layer due to a photovoltaic effect is subjected to strain regulation and control due to local strain gradient of a material. Compared with the prior art, the element integrates a photovoltaic effect and an optical calculation function, can simultaneously realize conversion from optical energy to electric energy and electric signal output of an optical calculation result through a single element, is a new generation of energy-calculation integrated optical calculation element, and can be used as a core calculation element of a green low-carbon chip.

Description

Technical Field

[0001] The present invention relates to the field of optical computing and photovoltaic technology, and in particular to an integrated optical computing chip element based on the photovoltaic effect, and a preparation method and application thereof. Background Art

[0002] The photovoltaic effect causes a potential difference to be generated when photovoltaic materials are exposed to light, allowing humans to use light energy for energy, reducing dependence on fossil fuels and thus reducing carbon emissions. Traditional photovoltaic cells based on pn junctions are limited by the bandgap energy of semiconductors and have a theoretical limit on photoelectric conversion efficiency, namely the Shockley-Queisser limit. The bulk photovoltaic effect usually occurs in non-centrosymmetric materials. When such materials are exposed to uniform light, photocurrents can be generated in the absence of an external field and spatial inhomogeneity, and are not subject to the Shockley-Queisser limit. If a strain gradient is artificially introduced to break the symmetry of the original centrosymmetric semiconductor, the bulk photovoltaic effect, namely the flexophotovoltaic effect, can be realized in the original centrosymmetric semiconductor. Photovoltaic materials that introduce strain gradients to produce bulk photovoltaic effects can generate photocurrents regulated by strain. Based on the flexophotovoltaic effect, SrTiO 3 、TiO 2 Applying stress to centrosymmetric single crystal materials such as Si generates photocurrent, and the magnitude of the photocurrent is affected by the strain gradient applied to these single crystal materials. The larger the strain gradient, the stronger the photocurrent generated (Science, 360(6391): 904-907, 2018).

[0003] The strain gradient of the flexural photovoltaic material is affected by the strain of the material in contact with it. 2 The thin sheet is in contact with the vanadium dioxide material. The temperature change will induce the phase change of the vanadium dioxide structure to produce micro-strain, making the MoS in contact with it 2 The strain gradient can be generated, which can be controlled by temperature. 2 The strain gradient can be adjusted to achieve temperature control of the output photocurrent (Nature nanotechnology, 16(8): 894-901, 2021).

[0004] The properties of flexural photovoltaic materials provide new ideas for the design of optical computing elements. If the flexural photovoltaic material is in contact with the light-induced structural phase change material, when the light-induced phase change material is modulated to produce a structural phase change, the phase change material strain caused by the structural phase change will cause the flexural photovoltaic material in contact with it to produce a strain gradient, thereby achieving optical control of the output photocurrent. In this case, the incident light of the flexural photovoltaic effect and the modulated light that induces the structural phase change of the material can be regarded as two beams of computational light, and the computational results are reflected in the output photocurrent of the flexural photovoltaic effect. The optical computing device itself has the ability to output the optical computation results as electrical signals. The application of optical computing devices will not require photoelectric conversion devices, which will greatly simplify the use of optical computing devices. In addition, this will provide new solutions for the development of optoelectronic integrated chips (i.e. chips that have both optical and electrical processing capabilities).

[0005] With the development of Internet-based communications and the growth of the user base, the Moore's Law of integrated circuits means that humans cannot only focus on improving the performance of electronic chips, but also need to seek new technological breakthroughs and innovations to cope with the challenges of increasingly large data computing. Optical computing is faster than electronic computing and can process data in parallel. Optical logic gates, optical computing devices and storage elements have become new research focuses and development trends. People hope to combine the advantages of optical computing with the existing electronic computing equipment to break through the Moore's Law. At present, the operation of all-optical computing devices almost all requires an external output conversion system, such as using a photodetector or a photoelectric converter to convert the optical signal of the optical computing result into an electrical signal. This is because the optical computing element itself does not have the ability to directly output the optical computing result as an electrical signal, and cannot be directly adapted to the existing electronic computer equipment, which is inconvenient to use. More importantly, this makes it difficult to directly integrate optical computing elements with electronic computing chips. Therefore, it is extremely important to develop optical computing elements that have optical computing capabilities and can directly output optical computing results as electrical signals.

[0006] The energy consumption of computing chips is another issue that cannot be ignored in the process of technological development. The development of artificial intelligence has an increasing demand for computing power, and such a huge computing power requires a lot of electrical energy support. If the computing element itself has the function of converting renewable energy such as solar energy into electrical energy, such as the photovoltaic effect, it can reduce the computing element's dependence on power supply and reduce the energy consumption required for power supply. Therefore, the research and development of optical computing elements with photovoltaic effect that can achieve partial self-power supply is very important.

[0007] CN115513317A discloses a device, preparation method and application capable of producing an adjustable photovoltaic response, wherein the device is composed of a substrate, a non-commensurate van der Waals layered material and a metal electrode. The upper surface of the non-commensurate van der Waals layered material is plated with a metal electrode. The high anisotropy of the non-commensurate van der Waals layered material and the low anti-slip strength between layers make it easier for the layers to slide relative to each other, or for ion migration to occur. Therefore, under the regulation of an external voltage, the internal electrical properties of the material can be changed, and the distribution of the internal potential of the material and the IV curve, the direction and size of the photoelectric response can be adjusted, so that an adjustable and non-volatile photovoltaic effect can be produced with good stability. However, this photovoltaic device regulated by an external voltage does not have the ability to enable dual beams to realize optical computing. The present application uses the flexural photovoltaic effect to construct a photovoltaic device that is simultaneously regulated by dual beams. The flexural photovoltaic effect excitation light and the modulated light that induces the phase change of the material structure to control the strain gradient can be regarded as two beams of computing light, and the computing results of the two affect the output photocurrent of the photovoltaic device, thus specifically improving the optical computing capability.

[0008] In summary, it is necessary to develop optical computing elements that have optical computing capabilities and can directly output optical computing results as electrical signals. At the same time, it is best for the optical computing element to have a photovoltaic effect to achieve partial self-power supply to reduce the need for additional energy supply. Such computing elements can be called "integrated computing" optical computing elements. This is an optical computing chip element that has not yet been proposed and is expected to promote and be applied to the development of a new generation of optoelectronic integrated chips and has broad application prospects. Summary of the invention

[0009] The purpose of the present invention is to overcome the defects of the above-mentioned prior art and to provide an integrated optical computing chip element based on the photovoltaic effect and its preparation method and application. By setting a flexible photovoltaic layer and a photoinduced strain layer, it is used to solve the problem that traditional photonic computing elements require additional equipment such as external photoelectric converters to achieve quantification of optical computing results, and to solve the high energy consumption problem of traditional computing elements that rely entirely on external power supply for operation.

[0010] The purpose of the present invention can be achieved by the following technical solutions:

[0011] The first object of the present invention is to provide an integrated optical computing chip element based on the photovoltaic effect, the core of which includes a substrate layer, a conductive electrode, a conductive contact, a flexible photovoltaic layer, and a photoinduced strain layer.

[0012] Furthermore, the conductive electrode is connected to the substrate layer; the flexible photovoltaic layer is in direct contact with the conductive electrode or connected through a conductive contact; the photoinduced strain layer and the flexible photovoltaic layer are both arranged on the substrate layer; the flexible photovoltaic layer is used to convert incident light into electrical energy and output electrical signals through the photovoltaic effect; the conductive electrode is used to output the electrical signals generated by the flexible photovoltaic layer; the photoinduced strain layer is used to control the output electrical signals by indirectly changing the strain gradient of the flexible photovoltaic layer.

[0013] Furthermore, the flexible photovoltaic layer converts incident sunlight into electrical energy and outputs electrical signals through the photovoltaic effect. When the flexible photovoltaic layer produces local strain, the photocurrent generated by the photovoltaic effect will be regulated by the strain due to the breakage caused by the local strain gradient of the material.

[0014] Furthermore, when the flexible photovoltaic layer is in direct contact with the conductive electrode, no conductive contact piece is provided, the flexible photovoltaic layer is respectively connected to the cathode conductive electrode and the anode conductive electrode, and the conductive electrodes will output the electrical signal generated by the flexible photovoltaic layer.

[0015] Furthermore, when the flexible photovoltaic layer is connected to the conductive electrode through a conductive contact, the conductive contact directly contacts the flexible photovoltaic layer and fixes it on the substrate layer, and the conductive contact is respectively connected to the cathode conductive electrode and the anode conductive electrode, and the conductive electrodes will output the electrical signal generated by the flexible photovoltaic layer.

[0016] In the present invention, the flexural photovoltaic layer is used to convert incident light energy into electrical energy through the bulk photovoltaic effect. After a strain gradient is applied to the flexural photovoltaic layer, the output current of the bulk photovoltaic effect under the same illumination is regulated by the strain.

[0017] Furthermore, the flexible photovoltaic layer may be composed of a semiconductor material that can produce a bulk photovoltaic effect.

[0018] Preferably, the flexible photovoltaic layer can be made of SrTiO 3 、TiO 2 It is composed of centrosymmetric semiconductor materials such as Si, and the symmetry breaking is introduced by applying stress to produce a bulk photovoltaic effect controlled by strain;

[0019] Preferably, the flexible photovoltaic layer can be made of 2H-MoS 2 It is composed of non-centrosymmetric semiconductor thin layer materials. Due to the flexural photovoltaic effect, the output photocurrent of its bulk photovoltaic effect is controlled by the strain gradient.

[0020] In the present invention, the conductive contact element is in direct contact with the flexible photovoltaic layer, and is used to conduct the photocurrent generated by the flexible photovoltaic layer due to the photovoltaic effect to the conductive electrode, and fix the relative position of the flexible photovoltaic layer on the substrate.

[0021] Furthermore, the material of the conductive contact element includes one or more two-dimensional materials with conductive properties.

[0022] Preferably, the conductive contact may be composed of a two-dimensional organic material with good conductive properties such as few-layer graphene;

[0023] Furthermore, the material of the conductive electrode includes one or more of conductive metals or non-metallic materials with conductive properties.

[0024] Preferably, the conductive electrode can be made of metals with good conductive properties such as gold, silver, platinum, copper, etc.

[0025] Preferably, the conductive contact piece and the conductive electrode can be bonded together by conductive adhesive such as silver sol or gold sol.

[0026] Preferably, the conductive contact piece and the conductive electrode can be integrated without the need for bonding with conductive adhesive, and the component simultaneously has the functions of fixing the flexible photovoltaic layer and serving as an electrode to conduct photocurrent.

[0027] Preferably, the conductive contact element and the conductive electrode can be in contact with each other.

[0028] Preferably, the conductive electrodes can exist in pairs. The same flexible photovoltaic layer can be paired with two conductive electrodes, one positive and one negative (i.e., a cathode conductive electrode and an anode conductive electrode) to draw out the photocurrent generated by the photovoltaic effect, or it can be paired with two, four, six or other pairs of conductive electrodes to draw out multiple photocurrents.

[0029] Preferably, the conductive electrodes may not exist in pairs, and the same flexible photovoltaic layer may be formed into pairs of multiple conductive electrodes such as one negative electrode and multiple positive electrodes or one positive electrode and multiple negative electrodes to draw out photocurrents generated by multi-path photovoltaic effects.

[0030] Further preferably, the same flexible photovoltaic layer is used to conduct photocurrent generated by the photovoltaic effect through two conductive electrodes (ie, a cathode conductive electrode and an anode conductive electrode).

[0031] In the present invention, the conductive electrode is fixed on the substrate base layer, and the substrate base layer is used to carry and fix other components.

[0032] Furthermore, the material of the substrate layer includes one or more of a transparent dielectric material or an opaque material.

[0033] Preferably, the substrate layer may be made of a transparent dielectric material such as silicon dioxide, indium tin oxide, etc., or may be made of an opaque material with low photothermal deformation.

[0034] In the present invention, the photoinduced strain layer will be deformed or slightly strained when irradiated by a specific light beam, and the degree of deformation or strain is regulated by the properties of the light beam, and can be restored to the original state in a controlled manner.

[0035] Furthermore, the material of the photoinduced strain layer includes one or more of a nonvolatile phase change material and a photoinduced deformation material.

[0036] Preferably, the photoinduced strain layer can be made of non-volatile phase change materials such as GST (Ge-Sb-Te, germanium-antimony-tellurium), and the intensity, pulse width and other properties of the modulated light can control the phase change material to transform between the amorphous state, the crystalline state, and the mixed state between the amorphous state and the crystalline state. The phase change of the material causes microstrain, so the modulated light is used to control the material strain.

[0037] Preferably, after the nonvolatile photoinduced strain layer (photoinduced strain layer composed of nonvolatile phase change material) is modulated by the modulated light, if the properties of the modulated light do not change or the incident modulated light stops, the photoinduced strain layer maintains its current state, which is equivalent to storing the input information of the last light exposure until the state of the photoinduced strain layer is modulated again after the properties of the modulated light change. Therefore, the state of the photoinduced strain layer is nonvolatile.

[0038] Preferably, the photoinduced strain layer can also be composed of photoinduced deformation materials such as light-responsive cross-linked liquid crystal polymers. When the modulated light irradiates the photoinduced strain layer, the layer is deformed. When the modulated light does not irradiate the photoinduced strain layer, the layer returns to its original undeformed state. Such a photoinduced strain layer is volatile.

[0039] Preferably, the volatile photoinduced strain layer may be composed of photoinduced deformation materials such as azodiphenylvinyl cross-linked liquid crystal polymer doped with up-conversion nano fluorescent particles.

[0040] In the present invention, the photoinduced strain layer is in physical contact with the flexible photovoltaic layer. When the photoinduced strain layer is irradiated by a specific light beam and produces deformation or micro-strain, the flexible photovoltaic layer in physical contact with it will subsequently produce a local strain gradient regulated by the light beam. The degree of strain of the flexible photovoltaic layer will affect the output photocurrent of the bulk photovoltaic effect, thereby realizing optical regulation of the output photocurrent of the flexible photovoltaic layer by modulated light.

[0041] Preferably, the photoinduced strain layer and the flexible photovoltaic layer can be in stacked contact, wherein the photoinduced strain layer is first stacked on the substrate layer and then the flexible photovoltaic layer is stacked, the flexible photovoltaic layer is fixed on the substrate layer by a conductive contact piece, and the flexible photovoltaic layer can completely or partially cover the photoinduced strain layer under the flexible photovoltaic layer.

[0042] Preferably, in the stacked contact mode, the flexible photovoltaic layer can be first stacked on the substrate base layer and then the photoinduced strain layer can be stacked. The photoinduced strain layer can be fixed on the flexible photovoltaic layer by various methods such as partial pressing, embedding, gluing, etc., and the flexible photovoltaic layer is fixed on the substrate base layer.

[0043] Preferably, the photoinduced strain layer and the flexible photovoltaic layer may also be in side-to-side contact, including left-right contact, front-to-back contact, oblique side contact, etc. The photoinduced strain layer and the flexible photovoltaic layer may also be partially overlapped when in side-to-side contact.

[0044] Preferably, in the side-adjacent contact mode, the flexible photovoltaic layer and the photoinduced strain layer can be respectively fixed on the substrate substrate layer by different contact fixing parts, or a fixing groove can be made on the substrate substrate layer by photolithography, etching, etc. and the flexible photovoltaic layer and the photoinduced strain layer can be embedded in the fixing groove of the substrate substrate layer.

[0045] In the present invention, the flexural photovoltaic layer can be incident with sunlight to excite the photovoltaic effect, or with polarized light or other modulated light to excite the photovoltaic effect, and the photoinduced strain layer can be incident with light that can cause the phase change of the layer as a control light beam.

[0046] Furthermore, the photoinduced strain layer is deformed or strained when irradiated by the control light beam, and the degree of deformation or strain of the photoinduced strain layer is regulated by the properties of the control light beam; the control light beam is irradiated onto the photoinduced strain layer through the substrate layer, or is irradiated onto the photoinduced strain layer from the side without passing through the substrate layer.

[0047] Preferably, a polarizer and a half-wave plate can be added to the flexible photovoltaic layer or the entire element in the incident direction of the bulk photovoltaic effect excitation light according to specific application requirements to compensate for the influence of the polarization state change of the incident light on the output photocurrent or voltage.

[0048] Preferably, the light for exciting the photovoltaic effect does not irradiate the photo-strained layer, and the light for modulating the photo-strained layer does not irradiate the flexible photovoltaic layer.

[0049] Preferably, if light used to excite the photovoltaic effect is to be irradiated onto the photoinduced strain layer, or light used to modulate the photoinduced strain layer is to be irradiated onto the flexible photovoltaic layer, a corresponding compensation structure needs to be designed to eliminate, weaken or compensate for the influence of the incident light of the photovoltaic effect on the photoinduced strain layer, and to eliminate, weaken or compensate for the influence of the modulated light of the photoinduced strain layer on the flexible photovoltaic layer.

[0050] In the present invention, the light regulating the photoinduced strain layer can be irradiated onto the photoinduced strain layer through the substrate layer, or can be irradiated onto the photoinduced strain layer from the side without passing through the substrate layer to regulate its strain state.

[0051] Preferably, if the control light of the photoinduced strain layer is irradiated onto the photoinduced strain layer through the substrate layer to be controlled, the substrate layer needs to be made of a transparent material.

[0052] Preferably, if the control light of the photoinduced strain layer is irradiated onto the photoinduced strain layer from the side to control its strain state without passing through the substrate layer, the substrate layer may be made of a transparent material or an opaque material.

[0053] In the present invention, the computing function of the device is realized as follows: the incident sunlight or specific light beam for exciting the bulk photovoltaic effect and the modulated light of the photoinduced strain layer will affect the photocurrent generated by the flexible photovoltaic layer, the bulk photovoltaic effect exciting light is divided into different computing input values ​​according to the intensity, and the modulated light of the photoinduced strain layer is divided into different computing input values ​​according to the intensity. The output voltage or current of the flexible photovoltaic layer can represent the output value of the optical computing result of the sunlight and the modulated light, thereby realizing the optical computing function.

[0054] Preferably, for binary operations or simple AND gate or OR gate calculations, when the photo-strained layer is not laser modulated or in any specific modulation state of the photo-strained layer, the bulk photovoltaic effect excitation light intensity corresponding to the average value of the minimum value and the maximum value of the output photocurrent or voltage of the flexural photovoltaic layer can be used as the threshold light intensity, and the bulk photovoltaic effect excitation light intensity greater than the light intensity can be used as the input signal 1 and the bulk photovoltaic effect excitation light intensity less than the light intensity can be used as the input signal 0, or the bulk photovoltaic effect excitation light intensity greater than the light intensity can be used as the input signal 0 and the bulk photovoltaic effect excitation light intensity less than the light intensity can be used as the input signal 1;

[0055] Preferably, for binary operations or simple AND gate or OR gate calculations, when the photo-strain layer is not laser modulated or in any specific modulation state of the photo-strain layer, any light intensity of the bulk photovoltaic effect excitation light intensity corresponding to the minimum and maximum values ​​of the output photocurrent or voltage of the flexible photovoltaic layer can be used as the threshold light intensity, and the bulk photovoltaic effect excitation light intensity greater than the light intensity can be used as the input signal 1 and the bulk photovoltaic effect excitation light intensity less than the light intensity can be used as the input signal 0. Alternatively, the bulk photovoltaic effect excitation light intensity greater than the light intensity can be used as the input signal 0 and the bulk photovoltaic effect excitation light intensity less than the light intensity can be used as the input signal 1.

[0056] Preferably, for multi-base operations or other complex calculations, multiple threshold light intensities can be set in the bulk photovoltaic effect excitation light intensity corresponding to the minimum and maximum values ​​of the output photocurrent or voltage of the flexible photovoltaic layer when the photoinduced strain layer is not laser modulated or in any specific modulation state of the photoinduced strain layer, and the incident light within different light intensity threshold ranges can be encoded into multi-level input signals such as 0, 1, 2, 3, etc. in order of intensity.

[0057] Preferably, when the photo-strained layer is not laser modulated or in any specific modulation state of the photo-strained layer, different polarization states of bulk photovoltaic effect excitation light incident on the flexible photovoltaic layer can be used as input signals.

[0058] Preferably, for binary operations or simple "AND" gate or "OR" gate calculations, when the flexible photovoltaic layer does not produce bulk photovoltaic effect or in any specific excitation state of bulk photovoltaic effect, any modulated light intensity corresponding to the minimum strain state and the maximum strain state of the photoinduced strain layer can be taken as the threshold light intensity, and the modulated light intensity greater than the light intensity can be used as the input signal 1 and the modulated light intensity less than the light intensity can be used as the input signal 0. Alternatively, the modulated light intensity greater than the light intensity can be used as the input signal 0 and the modulated light intensity less than the light intensity can be used as the input signal 1.

[0059] Preferably, for multi-base operations or other complex calculations, multiple threshold light intensities can be set in the modulated light intensity corresponding to the minimum strain state and the maximum strain state of the photoinduced strain layer when the flexible photovoltaic layer does not produce bulk photovoltaic effect or in any specific excitation state of bulk photovoltaic effect, and the incident modulated light within different light intensity threshold ranges can be encoded into multi-level input signals such as 0, 1, 2, 3, etc. in order of intensity.

[0060] Preferably, for simple "AND" gate calculation, the photocurrent generated by the flexural photovoltaic effect under different bulk photovoltaic effect excitation light and photoinduced strain layer modulated light properties can be measured respectively. According to the input signal setting method of the bulk photovoltaic effect excitation light and the photoinduced strain layer modulated light, a threshold is set for the photocurrent generated by the flexural photovoltaic effect. The photocurrent above the threshold is used as the output signal 1 and the photocurrent below the threshold is used as the output signal 0. Alternatively, the photocurrent above the threshold can be used as the output signal 0 and the photocurrent below the threshold can be used as the output signal 1, so that the output signal is 1 if and only if the two input signals are both 1, and the output signals are all 0 under other input signal combinations, thereby realizing "AND" gate calculation.

[0061] Preferably, for a simple "OR" gate calculation, the magnitude of the photocurrent generated by the flexural photovoltaic effect under different bulk photovoltaic effect excitation light and photoinduced strain layer modulated light properties can be measured respectively. According to the input signal setting method of the bulk photovoltaic effect excitation light and the photoinduced strain layer modulated light, a threshold value is set for the magnitude of the photocurrent generated by the flexural photovoltaic effect. The photocurrent above the threshold is used as the output signal 1 and the photocurrent below the threshold is used as the output signal 0. Alternatively, the photocurrent above the threshold can be used as the output signal 0 and the photocurrent below the threshold can be used as the output signal 1, so that the output signal is 0 when and only when the two input signals are both 0, and the output signals are all 1 under other input signal combinations, thereby realizing the "OR" gate calculation.

[0062] Preferably, for binary operations, multi-base operations and other complex operations, the photocurrent generated by the flexural photovoltaic effect under different bulk photovoltaic effect excitation light and photoinduced strain layer modulated light properties can be measured respectively, and one or more thresholds can be set for the photocurrent generated by the flexural photovoltaic effect according to the input signal setting method of the bulk photovoltaic effect excitation light and the photoinduced strain layer modulated light, and the output signal encoding setting is performed for the photocurrent in different intervals to satisfy the operation rules. The calculation can also be completed by a combination of multiple photovoltaic effect-based integrated optical computing chip elements.

[0063] In the present invention, the flexible photovoltaic layer can be stimulated by sunlight to produce a photovoltaic effect. The photovoltaic effect-based integrated optical computing chip element has both optical computing functions and the self-powered ability to convert solar energy into electrical energy, that is, it has the characteristics of "integrated energy and computing".

[0064] In the present invention, the photovoltaic effect-based integrated optical computing chip element can directly quantify the calculation results of two input light beams, namely, the bulk photovoltaic effect excitation light and the photo-strain layer modulated light, in the form of electrical signal outputs, without the need to use additional photoelectric conversion devices to convert the optical calculation output results into electrical signals for quantification.

[0065] In the present invention, the photovoltaic effect-based integrated optical computing chip element can quantify the input light of sunlight to determine the input signal of the photovoltaic effect excitation light in the working mode of sunlight exciting the photovoltaic effect.

[0066] Preferably, a polarization control component can be added to the flexure photovoltaic layer or the incident direction of the bulk photovoltaic effect excitation light of the entire element. The polarization characteristics of the light will affect the magnitude of the bulk photovoltaic effect output photocurrent. By adjusting the state of the polarization control component to control the polarization state of the bulk photovoltaic effect excitation light and using the polarization state of the excitation light as the input parameter of the light calculation, controlled bulk photovoltaic effect excitation light input parameter regulation can be achieved in the sunlight working mode. The polarization control component includes a filter, a polarizer, and a half-wave plate.

[0067] Preferably, the photocurrent generated by the flexural photovoltaic effect under different bulk photovoltaic effect excitation light and photoinduced strain layer modulated light properties can be measured in the laboratory. In actual outdoor applications, the intensity of sunlight usually does not change much in a short period of time. Different photoinduced strain layer modulated light signals are input and the current sunlight intensity is inferred based on the photocurrent of the component in the corresponding state. In this way, the corresponding setting relationship between the photocurrent and the output parameters of the flexural photovoltaic layer under different polarization state input parameters under the input light intensity is set, and the calculation within a period of time is completed with the bulk photovoltaic effect excitation light intensity. Thereafter, the above process is repeated at regular intervals to measure the bulk photovoltaic effect excitation light input signal and complete the calculation within a period of time.

[0068] Preferably, a micro photodetector may also be integrated on the component to detect and feedback the intensity of sunlight in real time for setting the corresponding relationship between the photocurrent and the output parameter under the corresponding state and completing the calculation normally.

[0069] In the present invention, the energy-computing integrated optical computing chip element based on the photovoltaic effect may not add a polarization control component on the flexible photovoltaic layer or in the incident direction of the bulk photovoltaic effect excitation light of the entire element under the working mode of sunlight excitation photovoltaic effect, and directly use the incident natural sunlight as the input parameter. At this time, the input parameter of the bulk photovoltaic effect excitation light among the two beams of computing light, namely, the bulk photovoltaic effect excitation light and the photo-induced strain layer modulated light, is controlled by solar activity and weather properties rather than by humans. The optical computing output photocurrent of the element is not an artificial calculation result in the traditional sense, but a calculation result carrying environmental information. Therefore, it can be used for solar activity monitoring or environmental monitoring under this working mode.

[0070] The second object of the present invention is to provide a method for preparing an integrated energy-computing optical computing chip element based on the photovoltaic effect, comprising the following steps:

[0071] S1, manufacturing two conductive electrodes at target positions on the substrate layer by maskless photolithography, electron beam evaporation deposition, photoresist stripping, or magnetron sputtering, or placing two already manufactured conductive electrodes and fixing them on the substrate layer by inlaying, bonding, or the like;

[0072] S2, forming or placing a photoinduced strain layer on the substrate layer by sputtering, deposition, etc.;

[0073] S3, placing a flexible photovoltaic layer on the photo-induced strain layer, wherein the flexible photovoltaic layer is in direct contact with two conductive electrodes, or the flexible photovoltaic layer is in contact with the photo-induced strain layer but not in contact with the conductive electrodes;

[0074] If the flexible photovoltaic layer is not in contact with the conductive electrode in step S3, there is step S4 of placing two conductive contact members on the flexible photovoltaic layer to contact the layer, wherein the conductive contact members contact the two conductive electrodes respectively.

[0075] Furthermore, the substrate layer in S1 may be made of a transparent dielectric material such as silicon dioxide, indium tin oxide, etc., or may be made of an opaque material with low photothermal deformation;

[0076] The conductive electrode in S1 can be made of conductive metals with good conductive properties such as gold, silver, platinum, copper, etc., or can be made of non-metallic materials with conductive properties such as graphene and graphite;

[0077] The photoinduced strain layer in S2 may be composed of a non-volatile phase change material such as GST, or may be composed of a photoinduced deformation material such as a photoresponsive cross-linked liquid crystal polymer;

[0078] The flexible photovoltaic layer in S3 may be made of SrTiO 3 、TiO 2 、Si、2H-MoS 2 It is composed of semiconductor materials that can produce bulk photovoltaic effect;

[0079] The conductive contact element in S4 may be composed of two-dimensional materials with good conductive properties such as few-layer graphene.

[0080] The third object of the present invention is to provide an application of an integrated optical computing chip element based on the photovoltaic effect, and to use the element to implement dual-beam optical computing. The computing method and computing principle include:

[0081] The structural phase transition of the photoinduced strain layer can be controlled by external light stimulation using a wavelength of λ 1 The state of the photoinduced strain layer is switched by a control beam, and the logic state of the incident control beam is measured according to the power of the control beam, and the logic state of the control beam above the power threshold is defined as 0 (or 1), and the logic state of the control beam below the power threshold is defined as 1 (or 0);

[0082] The wavelength used is λ 2 The photovoltaic effect excitation light is used to directly control the photovoltaic effect output electrical signal of the flexible photovoltaic layer, and the logic state of the photovoltaic effect excitation light above the power density threshold is defined as 0 (or 1), and the logic state of the photovoltaic effect excitation light below the power density threshold is defined as 1 (or 0). The short-circuit current density generated by the bulk photovoltaic effect is positively correlated (or negatively correlated) with the power density of the photovoltaic effect excitation light.

[0083] Test and record λ separately 1 and λ 2 The short-circuit current I of the component under two beams of light with different incident light powers SC The size of the output current threshold I is set according to the test results. th , defined as greater than the threshold I th The short-circuit current I SC The logic state is 1 (or 0), not greater than the threshold I th The short-circuit current I SC The logical state is 0 (or 1);

[0084] Using the AND gate operation element, the output threshold is set to meet the requirement only when λ 1 and λ 2 The logic state of the output current is 1 only when the logic states of the two incident light beams are both 1, otherwise the logic state of the output current is 0, which meets the logic requirements of the "AND" gate operation element;

[0085] Using the OR gate operation element, the output threshold is set to meet the requirement only when λ 1 and λ 2 The logic state of the output current is 0 only when the logic states of the two incident light beams are both 0, otherwise the logic state of the output current is 1, which meets the logic requirements of the "OR" gate operation element.

[0086] The fourth object of the present invention is to provide an application of an integrated optical computing chip element based on the photovoltaic effect, wherein the optical computing chip element is used to realize optical computing of sunlight and modulated light beams, and the computing method and computing principle include:

[0087] The structural phase transition of the photoinduced strain layer can be controlled by external light stimulation using a wavelength of λ 1 The state of the photoinduced strain layer is switched by a control beam, and the logic state of the incident control beam is measured according to the power of the control beam, and the logic state of the control beam above the power threshold is defined as 0 (or 1), and the logic state of the control beam below the power threshold is defined as 1 (or 0);

[0088] Using sunlight to stimulate the photovoltaic effect, adding a filter, a polarizer and a half-wave plate in the direction of the incident sunlight, the half-wave plate is controlled by an electric rotation controller, and the incident sunlight becomes polarized light after passing through the polarizer and the half-wave plate to enter the element and stimulate the photovoltaic effect, and the rotating half-wave plate is used to adjust the polarization state of the light;

[0089] The short-circuit current generated by the photovoltaic effect of the flexural photovoltaic layer is controlled by the polarization state of the incident light. When the angle between the polarization direction of the light and the reference direction is defined as nπ (n=0, 1, 2, ...), the logic state of the incident light is 0 (or 1). When the angle between the polarization direction of the light and the reference direction is defined as nπ / 2 (n=0, 1, 2, ...), the logic state of the incident light is 1 (or 0).

[0090] Test and record the different output polarization states and λ of sunlight after being regulated by the polarization device. 1 Regulating the short-circuit current I of the component under different incident light powers SC The size of the output current threshold I is set according to the test results. th , defined as greater than the threshold I th The short-circuit current I SC The logic state is 1 (or 0), not greater than the threshold I th The short-circuit current I SC The logical state is 0 (or 1);

[0091] Using the AND gate operation element, the output threshold is set to meet the requirement only when λ 1 and λ 2The logic state of the output current is 1 only when the logic states of the two incident light beams are both 1, otherwise the logic state of the output current is 0, which meets the logic requirements of the "AND" gate operation element;

[0092] Using the OR gate operation element, the output threshold is set to meet the requirement only when λ 1 and λ 2 The logic state of the output current is 0 only when the logic states of the two incident light beams are both 0, otherwise the logic state of the output current is 1, which meets the logic requirements of the "OR" gate operation element.

[0093] Compared with the prior art, the present invention has the following beneficial effects:

[0094] 1) The technical solution provides an all-in-one optical computing chip element based on the photovoltaic effect. The proposed element realizes all-optical computing and electrical signal output based on the flexural photovoltaic effect. The optical computing result will be directly output as an electrical signal. Its all-optical computing and energy conversion functions are realized by the same element. There is no need to use modulated light and signal light to complete the calculation like traditional optical computing elements based on phase change materials, and then convert the intensity, phase and other signal changes of the optical computing output light beam into electrical signal quantization through a photoelectric converter. The invented optical computing element can be integrated with existing electronic computing chip elements and used as a photoelectric conversion and computing element in a photoelectric computing chip to realize a new photoelectric computing function.

[0095] 2) This technical solution provides an integrated optical computing chip element based on the photovoltaic effect. The proposed element has a photovoltaic effect and can complete energy conversion and optical computing functions under illumination. The element realizes computing functions based on the flexural photovoltaic characteristic that the photocurrent generated by the bulk photovoltaic effect material is controlled by the strain gradient. It can autonomously complete the conversion of light energy into electrical energy under illumination. Therefore, the element is partially self-powered during operation and has the "integrated energy and computing" property that other computing elements do not have. It only needs to supply additional energy for regulating light. Compared with traditional pure energy-consuming chip computing elements, the invented chip computing element reduces the proportion of additional electrical energy required for the operation of the element to the total operating energy consumption, and promotes the research of low-energy green chip computing elements.

[0096] 3) The technical solution provides an integrated energy-computing optical computing chip element based on the photovoltaic effect. The proposed element has multiple working states. The flexible photovoltaic layer and the photoinduced strain layer can respectively realize controlled optical computing functions under the incidence of sunlight and modulated light (control light beam). The flexible photovoltaic layer and the photoinduced strain layer can also respectively realize controlled optical computing functions under the incidence of modulated light of different wavelengths (bulk photovoltaic effect excitation light incident on the flexible photovoltaic layer and control light beam incident on the photoinduced strain layer). The flexible photovoltaic layer and the photoinduced strain layer can also respectively realize optical computing functions carrying sunlight information for monitoring solar activity under the incidence of sunlight and control light beam. BRIEF DESCRIPTION OF THE DRAWINGS

[0097] Figure 1 This is a schematic diagram of the structure of the photovoltaic effect-based integrated optical computing chip element in Embodiment 1 of the present invention;

[0098] Figure 2 This is a schematic diagram of the structure of the photovoltaic effect-based integrated optical computing chip element in Example 2 of the present invention.

[0099] Figure 3 This is a schematic diagram of the structure of the photovoltaic effect-based integrated optical computing chip element in Example 3 of the present invention.

[0100] in:

[0101] 1. Substrate layer; 2. Conductive electrode; 3. Conductive contact; 4. Flexible photovoltaic layer; 5. Photoinduced strain layer; 6. Bandpass filter; 7. Polarizer; 8. Half-wave plate; 9. Packaging layer. DETAILED DESCRIPTION

[0102] The present invention is described in detail below in conjunction with the accompanying drawings and specific embodiments. The features such as component models, material names, connection structures, etc. that are not clearly described in this technical solution are all regarded as common technical features disclosed in the prior art.

[0103] The present invention relates to an integrated optical computing chip element based on photovoltaic effect and its preparation method and application, and relates to the field of optical computing and photovoltaic technology. The element includes a substrate layer 1, a conductive electrode 2, a conductive contact 3, a flexural photovoltaic layer 4, and a photo-strain layer 5. The solar energy incident on the flexural photovoltaic layer 4 is converted into electrical energy due to the photovoltaic effect. The photo-strain layer 5 in physical contact with the flexural photovoltaic layer 4 will produce strain when irradiated by a special light beam. The strain of the photo-strain layer 5 causes the flexural photovoltaic layer 4 in contact with it to produce a local strain regulated by the light beam. The short-circuit current generated by the photovoltaic effect of the flexural photovoltaic layer 4 will be strain-regulated due to the breakage caused by the local strain gradient of the material. The proposed element realizes the regulation of the output electrical signal of the flexural photovoltaic layer 4 based on the photovoltaic effect through photo-regulation. A single element can realize the optical computing function of the incident sunlight and the modulated light of the photo-strain layer, and can directly output electrical signals through the photovoltaic effect to feedback the optical computing results, without adding additional devices such as photoelectric converters for detecting the photon computing results. This component integrates the photovoltaic effect and optical computing functions. A single component can simultaneously realize the conversion of light energy into electrical energy and the electrical signal output of optical computing results. It is a new generation of "energy and computing in one" optical computing component and can be used as the core computing component of green and low-carbon chips.

[0104] In some embodiments of the present invention, the photocurrent generated by the photovoltaic effect of the flexible photovoltaic layer 4 is simultaneously regulated by two beams of light. The optical properties such as the intensity and polarization state of the incident sunlight or the bulk photovoltaic effect excitation light on the flexible photovoltaic layer 4 can directly control the output electrical signal. The regulated light beam of the photoinduced strain layer 5 can control the output electrical signal by indirectly changing the strain gradient of the flexible photovoltaic layer 4. The electrical signal output by the flexible photovoltaic layer 4 is the optical calculation result of the two beams of light.

[0105] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral one; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements; "up", "down", "left", "right" and the like are only used to indicate relative positional relationships, and when the absolute position of the described object changes, the relative positional relationship may change. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0106] It should be noted that, in the present invention, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0107] The present invention is further described in detail below in conjunction with specific embodiments.

[0108] Example 1 Two beams of modulated light with different wavelengths are incident to realize AND gate and OR gate calculation

[0109] like Figure 1 As shown, in this embodiment, an integrated energy-computing optical computing chip element based on the photovoltaic effect is provided, and the optical computing chip element includes a substrate layer 1, a conductive electrode 2, a conductive contact 3, a flexible photovoltaic layer 4, and a photoinduced strain layer 5.

[0110] Silicon dioxide is selected as the substrate layer 1. A pattern is drawn on the silicon dioxide / silicon substrate using maskless photolithography technology, and then a Ti / Au layer is deposited on the photoresist-patterned substrate by electron beam evaporation, and two gold electrodes, one on the left and one on the right, are formed at the target position on the substrate layer 1 by a stripping process, that is, two conductive electrodes 2, which are a cathode conductive electrode and an anode conductive electrode. Furthermore, a conductive silver glue can be used to bond a micro-metal wire lead-out electrode to the gold electrode.

[0111] A mask plate with a rectangular groove structure is gently placed on the substrate layer 1, and a GST material is deposited on the substrate layer 1 with the mask plate using radio frequency sputtering technology to form a rectangular long strip of GST micro-beam structure between the two gold electrodes, which is the photoinduced strain layer 5, and the GST and the gold electrodes do not contact each other, that is, the photoinduced strain layer 5 does not contact the conductive electrode 2.

[0112] The 2H phase of MoS 2 The bulk crystal was placed on a piece of scotch tape and peeled off several times. Then the polydimethylsiloxane (PDMS) layer was used as a stamp to press the scotch tape onto the PDMS sheet to make MoS 2 The thin layer is pressed onto the PDMS. After slowly removing the tape, some ultra-thin MoS 2 The film was transferred to PDMS to obtain a MoS2 The PDMS flexible thin layer of the sheet is then used to obtain MoS 2 The thin layer is used as a flexible photovoltaic layer 4. Subsequently, a PDMS flexible thin layer with a few-layer graphene flake is prepared in the same manner as the above process, so that the few-layer graphene is subsequently used as a conductive contact 3.

[0113] Under the microscope, the MoS 2 The thin PDMS flexible layer was loaded onto a three-dimensional manipulation translation robot, which was then used to manipulate the MoS 2 The thin slice is aligned with the GST microbeam on the substrate layer 1, and the MoS 2 The flake is gently pressed onto the site and the MoS 2 The PDMS flexible thin layer adhered to the flakes, followed by MoS 2 The thin layer (i.e., the flexible photovoltaic layer 4) is left on the substrate layer 1. In this embodiment, the two ends of the flexible photovoltaic layer 4 cover the substrate layer 1, and the middle covers the photoinduced strain layer 5. Subsequently, the PDMS flexible thin layer with the few-layer graphene flakes is loaded onto the three-dimensional operation translation robot arm, and the few-layer graphene is aligned and bonded to the MoS 2 The thin sheet is connected to the gold electrode on one side, peeling off the PDMS flexible thin layer to which the few-layer graphene adheres, leaving the few-layer graphene on the MoS 2 The same method was used to connect the gold electrode on one side of the MoS 2 A few-layer graphene conductive contact 3 is also made on the other side of the sheet and the gold electrode on the other side. 2 The thin layer is used as the flexural photovoltaic layer 4, the GST rectangular microbeam layer is used as the photoinduced strain layer 5, and the MoS 2 There is a few-layer graphene on each side of the thin layer as a conductive contact 3 connected to the gold electrode conductive electrodes 2 on both sides respectively, and the energy-computing integrated optical computing chip element based on the photovoltaic effect is as follows: Figure 1 shown.

[0114] A pulsed laser with a wavelength of about 1550nm is used as the modulated light (control light beam) of the GST photo-strained layer to switch the state of GST. In this embodiment, the control light beam of the photo-strained layer 5 can be irradiated onto the photo-strained layer 5 through the substrate layer 1, or it can be irradiated onto the photo-strained layer 5 from the side without passing through the substrate layer 1 to control its strain state. Low-energy pulses convert GST into a crystalline state, while high-energy pulses convert GST into an amorphous state. In the process of controlling the state of GST using light pulses of different energies, there is a mixed state between the crystalline state and the amorphous state. An incident light pulse of less than 50mW is defined as a logic state 0, and an incident light pulse of not less than 50mW is defined as a logic state 1.

[0115] The MoS 2 The control light of the flexural photovoltaic layer 4 (bulk photovoltaic effect control light), the power density control range of the 532nm control light is 10W / cm 2 ~100W / cm 2 For MoS 2 For 10W / cm 2 ~100W / cm 2 Within the incident light power density range, the short-circuit current density generated by the bulk photovoltaic effect is positively correlated with the incident light power density. The higher the light power density, the larger the photovoltaic current generated. 2 The 532nm light is defined as logic state 1 (or 0), and the power density is not higher than 50W / cm 2 The 532nm light is defined as a logic state 0 (or 1).

[0116] The structural phase change of the phase change material GST can be controlled by external light stimulation, and such a phase change can be controlled in the two-dimensional material MoS 2 The GST photoinduced strain layer 5 regulated by the 1550nm wavelength will induce a strain gradient in the thin layer, especially near the contact boundary. 2 The flexible photovoltaic layer 4 generates a strain gradient, and the strength of the strain gradient will affect the magnitude of the photocurrent output by the flexible photovoltaic layer 4 due to the bulk photovoltaic effect. The magnitude of the photocurrent output by the flexible photovoltaic layer 4 is also affected by the bulk photovoltaic effect regulating light with a wavelength of 532nm, that is, the two beams of light with wavelengths of 1550nm and 532nm indirectly and directly affect the magnitude of the component output photocurrent respectively.

[0117] Therefore, the production process and principle of the "AND" gate element are as follows:

[0118] The short-circuit current I of the component at different incident light powers of two beams of light with wavelengths of 1550nm and 532nm was tested and recorded respectively. ScThe size of the output current threshold I is set according to the test results. th , defined as greater than the threshold I th The short-circuit current I sC The logic state is 1 (or 0), not greater than the threshold I th The short-circuit current I SC The logic state is 0 (or 1), so that the logic state of the output current is 1 only when the logic states of the two incident light beams of 1550nm and 532nm are both 1, otherwise the logic state of the output current is 0, which meets the logic requirements of the "AND" gate operation element.

[0119] "AND" gate calculation diagram

[0120]

[0121]

[0122] Similarly, the production process and principle of the "OR" gate element are as follows:

[0123] The short-circuit current I of the component at different incident light powers of two beams of light with wavelengths of 1550nm and 532nm was tested and recorded respectively. sc The size of the output current threshold I is set according to the test results. th , defined as greater than the threshold I th The short-circuit current I sc The logic state is 1 (or 0), not greater than the threshold I th The short-circuit current I sC The logic state is 0 (or 1), so that the logic state of the output current is 0 only when the logic states of the two incident light beams of 1550nm and 532nm are both 0, otherwise the logic state of the output current is 1, which meets the logic requirements of the "OR" gate operation element.

[0124] "AND" gate calculation diagram

[0125] 1550nm incident light logic state 532nm incident light logic state Output logic state 0 0 0 0 1 1 1 0 1 1 1 1

[0126] In the above-mentioned computing element, the process of converting light energy into electrical energy is realized by the bulk photovoltaic effect, that is, it is realized by the computing element itself, without the need for additional auxiliary power-consuming devices such as photoelectric conversion devices.

[0127] Example 2: Sunlight and GST modulated light incident to realize AND gate and OR gate calculation

[0128] like Figure 2 As shown, in this embodiment, an integrated energy-computing optical computing chip element based on the photovoltaic effect is provided, and the optical computing chip element includes a substrate layer 1, a conductive electrode 2, a conductive contact 3, a flexible photovoltaic layer 4, and a photoinduced strain layer 5.

[0129] Silicon dioxide is selected as the substrate layer 1. A pattern is drawn on the silicon dioxide / silicon substrate using maskless photolithography technology, and then a Ti / Au layer is deposited on the photoresist-patterned substrate by electron beam evaporation, and two gold electrodes 2, one on the left and one on the right, are formed at the target position on the substrate layer 1 by a stripping process, that is, two conductive electrodes 2, which are a cathode conductive electrode and an anode conductive electrode. Furthermore, a conductive silver glue can be used to bond a micro-metal wire lead-out electrode to the gold electrode.

[0130] A mask plate with a rectangular groove structure is gently placed on the substrate layer 1, and a GST material is deposited on the substrate layer 1 with the mask plate using radio frequency sputtering technology to form a rectangular long strip of GST micro-beam structure between the two gold electrodes, which is the photoinduced strain layer 5, and the GST and the gold electrodes do not contact each other, that is, the photoinduced strain layer 5 does not contact the conductive electrode 2.

[0131] The 2H phase of MoS 2 The bulk crystal was placed on a piece of scotch tape and peeled off several times. Then the polydimethylsiloxane (PDMS) layer was used as a stamp to press the scotch tape onto the PDMS sheet to make MoS 2 The thin layer is pressed onto the PDMS. After slowly removing the tape, some ultra-thin MoS 2 The film was transferred to PDMS to obtain a MoS 2 The PDMS flexible thin layer of the sheet is then used to obtain MoS 2 The thin layer is used as a flexible photovoltaic layer 4. Subsequently, a PDMS flexible thin layer with a few-layer graphene flake is prepared in the same manner as the above process, so that the few-layer graphene is subsequently used as a conductive contact 3.

[0132] Under the microscope, the MoS 2 The thin PDMS flexible layer was loaded onto a three-dimensional manipulation translation robot, which was then used to manipulate the MoS 2 The thin slice is aligned with the GST microbeam on the substrate layer 1, and the MoS 2 The flake is gently pressed onto the site and the MoS 2 The PDMS flexible thin layer adhered to the flakes, followed by MoS 2 The thin layer (i.e., the flexible photovoltaic layer 4) is left on the substrate layer 1. In this embodiment, the two ends of the flexible photovoltaic layer 4 cover the substrate layer 1, and the middle covers the photoinduced strain layer 5. Subsequently, the PDMS flexible thin layer with the few-layer graphene flakes is loaded onto the three-dimensional operation translation robot arm, and the few-layer graphene is aligned and bonded to the MoS 2The thin sheet is connected to a gold electrode on one side, and the PDMS flexible thin layer to which the few-layer graphene adheres is peeled off so that the few-layer graphene is left on the MoS 2 The same method was used to connect the gold electrode on one side of the MoS 2 A few-layer graphene conductive contact 3 is also made on the other side of the sheet and the gold electrode on the other side. 2 The thin layer is used as the flexural photovoltaic layer 4, the GST rectangular microbeam layer is used as the photoinduced strain layer 5, and the MoS 2 There is a few-layer graphene on each side of the thin layer as a conductive contact 3 connected to the gold electrode conductive electrodes 2 on both sides respectively, and the energy-computing integrated optical computing chip element based on the photovoltaic effect is as follows: Figure 2 shown.

[0133] During the use of the element, a bandpass filter 6 is added in the incident direction of sunlight (the function of the bandpass filter 6 is to filter out light of other wavelengths, such as light with wavelengths of 405nm, 532nm, and 635nm, which can excite MoS 2 The bulk photovoltaic effect can be achieved by using a bandpass filter of 405±10nm, 532±10nm, or 635±10nm. The photovoltaic excitation efficiency of the wavelength of 532nm is relatively high). According to the transmission band of the bandpass filter 6, a polarizer 7 and a half-wave plate 8 that can be used at the working wavelength are selected. The direction of the polarizer 7 is fixed and cannot be adjusted. The half-wave plate 8 is arranged between the polarizer 7 and the flexural photovoltaic layer 4. The half-wave plate 8 is controlled by an electric rotation controller. The incident sunlight passes through the polarizer 7 and becomes polarized light for emission. The half-wave plate 8 can be rotated to adjust the polarization state of the emitted light. The emitted light of the half-wave plate 7 is incident on the MoS 2 The thin-layer flexural photovoltaic layer 4 excites the bulk photovoltaic effect.

[0134] It should be noted that, depending on the situation, two microlenses can be placed before the half-wave plate 8 and the polarizer 7, or between the half-wave plate 8 and the flexible photovoltaic layer 4. The two microlenses constitute a 4F beam reduction optical system for increasing the optical power density of the parallel incident light irradiated on the flexible photovoltaic layer 4. The short-circuit current generated by the bulk photovoltaic effect is controlled by the polarization state of the incident light, that is, the rotating half-wave plate 8 can control the magnitude of the current generated by the photovoltaic effect. When the angle between the polarization direction of the light and the reference direction is defined as nπ (n=0, 1, 2, ...), the logical state of the incident light is 0, and when the angle between the polarization direction of the light and the reference direction is defined as mπ / 2 (n=0, 1, 2, ...), the logical state of the incident light is 1.

[0135] A pulsed laser with a wavelength of about 1550nm is used as the modulated light (control light beam) of the GST photo-strained layer 5 to switch the state of GST. In this embodiment, the control light beam of the photo-strained layer 5 can be irradiated onto the photo-strained layer 5 through the substrate layer 1, or it can be irradiated onto the photo-strained layer 5 from the side without passing through the substrate layer 1 to control its strain state. Low-energy pulses convert GST into a crystalline state (high reflectivity state), while high-energy pulses convert GST into an amorphous state (low reflectivity state). In the process of controlling the state of GST using light pulses of different energies, there is a mixed state between the crystalline state and the amorphous state. An incident light pulse of less than 50mW is defined as a logic state 0 (or 1), and an incident light pulse of not less than 50mW is defined as a logic state 1 (or 0).

[0136] The structural phase change of the phase change material GST can be controlled by external light stimulation, and such a phase change can be controlled in the two-dimensional material MoS 2 The GST photoinduced strain layer 5 regulated by the 1550nm wavelength will induce a strain gradient in the thin layer, especially near the contact boundary. 2 The photoinduced strain layer 5 generates a strain gradient, the strength of which will affect the magnitude of the photocurrent output by the flexible photovoltaic layer 4 due to the bulk photovoltaic effect. The magnitude of the photocurrent output by the flexible photovoltaic layer 4 is also controlled by the polarization state of the incident sunlight after passing through the polarization device (polarizer 7 and half-wave plate 8), that is, the two beams of sunlight and 1550nm wavelength jointly affect the magnitude of the photocurrent output by the component.

[0137] Therefore, the production process and principle of the "AND" gate element are as follows:

[0138] The different outgoing polarization states of sunlight after being regulated by the polarization device and the short-circuit current I of the component under different incident light powers of the regulated light of 1550nm wavelength were tested and recorded respectively. sC The size of the output current threshold I is set according to the test results. th , defined as greater than the threshold I th The short-circuit current I sc The logic state is 1 (or 0), not greater than the threshold I th The short-circuit current I sC The logic state is 0 (or 1), so that the logic state of the output current is 1 only when the logic states of the two incident light beams of sunlight and 1550nm are both 1, otherwise the logic state of the output current is 0, which meets the logic requirements of the "AND" gate operation element.

[0139] "AND" gate calculation diagram

[0140]

[0141]

[0142] Similarly, the production process and principle of the "OR" gate element are as follows:

[0143] The different outgoing polarization states of sunlight after being regulated by the polarization device and the short-circuit current I of the component under different incident light powers of the regulated light of 1550nm wavelength were tested and recorded respectively. Sc The size of the output current threshold I is set according to the test results. th , defined as greater than the threshold I th The short-circuit current I sC The logic state is 1 (or 0), not greater than the threshold I th The short-circuit current I SC The logic state is 0 (or 1), so that the logic state of the output current is 0 only when the logic states of the sunlight and the 1550nm incident light are both 0, otherwise the logic state of the output current is 1, which meets the logic requirements of the "OR" gate operation element.

[0144] "AND" gate calculation diagram

[0145] Sunlight logic status 1550nm incident light logic state Output logic state 0 0 0 0 1 1 1 0 1 1 1 1

[0146] It is worth noting that the above logic gate calculation assumes that the optical power density of the incident sunlight is constant, which may be achieved during a period of time at noon when the sun is abundant, but in fact the optical power density of outdoor sunlight will change significantly over time, especially the optical power density in the morning and evening is very different from that at noon. Therefore, a power stabilization or feedback device can be added in the direction of sunlight incidence to compensate for the impact of changes in sunlight power density on the output photocurrent.

[0147] In the above-mentioned computing element, one of the light beams involved in the calculation is sunlight that has passed through a polarized optical element. The process of converting light energy into electrical energy is achieved by the bulk photovoltaic effect, that is, it is achieved by the computing element itself without the need for additional power-consuming devices such as photoelectric conversion devices.

[0148] Example 3

[0149] like Figure 3 As shown, in this embodiment, an integrated optical computing chip element based on the photovoltaic effect is provided. Based on Embodiment 1, this embodiment differs from Embodiment 1 in that, in this embodiment, a conductive contact member 3 is not provided, and the flexible photovoltaic layer 4 is in direct contact with the conductive electrode 2.

[0150] The difference between this embodiment and embodiment 1 is that, in this embodiment, the flexible photovoltaic layer 4 is first stacked on the substrate base layer 1 and then the photoinduced strain layer 5 is stacked, the photoinduced strain layer 5 is fixed on the flexible photovoltaic layer 4, and the function of the encapsulation layer 9 is to allow the micro-strain of the photoinduced strain layer 5 to act on the flexible photovoltaic layer 4 to generate a strain gradient.

[0151] Silicon dioxide is selected as the substrate layer 1, a mask is added to the substrate layer 1, and a gold electrode is made on the substrate layer 1 by magnetron sputtering. The mask has two holes, and only the substrate layer 1 corresponding to the holes will have a gold electrode after magnetron sputtering, thereby forming two gold electrodes on the left and right at the target position on the substrate layer 1, that is, two conductive electrodes 2, which are a cathode conductive electrode and an anode conductive electrode. Furthermore, a conductive silver glue can be selected to bond a micro metal wire lead-out electrode to the gold electrode.

[0152] On the substrate layer 1 with metal electrodes, TiO 2 A flexible photovoltaic layer 4 is produced. A mask is added during the process of producing the flexible photovoltaic layer 4 by magnetron sputtering to prevent the flexible photovoltaic layer 4 from completely covering the cathode conductive electrode and the anode conductive electrode. Subsequently, a photoinduced strain layer 5 is produced on the flexible photovoltaic layer 4 by magnetron sputtering GST, during which a mask is used to prevent the photoinduced strain layer 5 from contacting the conductive electrode 2. Finally, an encapsulation layer 9 is added to the photoinduced strain layer 5, and the encapsulation layer 9 directly contacts the photoinduced strain layer 5, so that the microstrain generated by the photoinduced strain layer 5 can act on the flexible photovoltaic layer 4 and produce a controlled strain gradient.

[0153] In this embodiment, the control light beam of the photo-induced strain layer 5 can be irradiated onto the photo-induced strain layer 5 through the encapsulation layer 9, and the encapsulation layer 9 is made of the same light-transmitting material as the substrate layer 1. The control light beam of the photo-induced strain layer 5 can also be irradiated onto the photo-induced strain layer 5 from the side without passing through the encapsulation layer 9 to regulate its strain state.

[0154] In this embodiment, the regulated light beam of the flexible photovoltaic layer 4 can be irradiated onto the flexible photovoltaic layer 4 through the substrate layer 1, or it can be irradiated onto the area of ​​the flexible photovoltaic layer 4 not covered by the photoinduced strain layer 5 through the encapsulation layer 9. The regulated light beam of the flexible photovoltaic layer 4 can also be irradiated onto the flexible photovoltaic layer 4 from the side without passing through the encapsulation layer 9 or the substrate layer 1 to generate photocurrent.

[0155] A pulsed laser with a wavelength of about 1550nm is used as the control beam of the GST photoinduced strain layer to switch the state of GST. Low-energy pulses convert GST into a crystalline state, while high-energy pulses convert GST into an amorphous state. In the process of controlling the state of GST using light pulses of different energies, there is a mixed state between the crystalline state and the amorphous state. A continuous light with a wavelength of about 405nm is used as the control beam of the TiO 2The bulk photovoltaic effect of the flexural photovoltaic layer 4 modulates light.

[0156] The structural phase change of the phase change material GST can be controlled by regulating the light beam. Such a phase change can be achieved in the TiO 2 The GST photoinduced strain layer 5 regulated by the 1550nm wavelength will cause the TiO in contact with it to undergo a phase change. 2 The flexure photovoltaic layer 4 generates a strain gradient, and the strength of the strain gradient will affect the magnitude of the photocurrent output by the flexure photovoltaic layer 4 due to the bulk photovoltaic effect, and the magnitude of the photocurrent output by the flexure photovoltaic layer 4 is also affected by the bulk photovoltaic effect control light with a wavelength of 405nm, that is, the two beams of light with wavelengths of 1550nm and 405nm respectively indirectly and directly affect the magnitude of the photocurrent output by the component. The logical state, computing function, and usage of the component can be appropriately set with reference to the methods described in the analogous embodiments 1 and 2.

[0157] The above description of the embodiments is to facilitate the understanding and use of the invention by those skilled in the art. It is obvious that those skilled in the art can easily make various modifications to these embodiments and apply the general principles described herein to other embodiments without creative work. Therefore, the present invention is not limited to the above embodiments, and improvements and modifications made by those skilled in the art based on the disclosure of the present invention without departing from the scope of the present invention should be within the scope of protection of the present invention.

Claims

1. An integrated optical computing chip element based on photovoltaic effect, characterized in that: The optical computing chip element comprises a substrate layer (1), a conductive electrode (2), a flexible photovoltaic layer (4), and a photoinduced strain layer (5); The conductive electrode (2) is connected to the substrate base layer (1); The flexible photovoltaic layer (4) is in direct contact with the conductive electrode (2) or connected via a conductive contact member (3); The photoinduced strain layer (5) and the flexible photovoltaic layer (4) are arranged on the substrate layer (1); The flexible photovoltaic layer (4) is used to convert incident light into electrical energy and output electrical signals through the photovoltaic effect; The conductive electrode (2) is used to output the electrical signal generated by the flexible photovoltaic layer (4); The photoinduced strain layer (5) is used to control the output electrical signal by indirectly changing the strain gradient of the flexible photovoltaic layer (4).

2. The photovoltaic effect-based integrated optical computing chip element according to claim 1, characterized in that: When the flexible photovoltaic layer (4) generates local strain, the photocurrent generated by the photovoltaic effect is regulated by the strain due to the breakage caused by the local strain gradient of the material.

3. The photovoltaic effect-based integrated optical computing chip element according to claim 1, characterized in that: It also includes a regulating light beam, and the photoinduced strain layer (5) is irradiated by the regulating light beam to generate deformation or strain, and the degree of deformation or strain of the photoinduced strain layer (5) is regulated by the properties of the regulating light beam; The regulated light beam is irradiated onto the photoinduced strain layer (5) through the substrate layer (1), or is irradiated onto the photoinduced strain layer (5) from the side without passing through the substrate layer (1).

4. The photovoltaic effect-based integrated optical computing chip element according to claim 3, characterized in that: The photocurrent generated by the flexural photovoltaic layer (4) due to the photovoltaic effect is simultaneously regulated by two beams of light, one of which is sunlight or bulk photovoltaic effect excitation light incident on the flexural photovoltaic layer (4), and the other is a regulated light beam; The incident sunlight or bulk photovoltaic effect excitation light on the flexural photovoltaic layer (4) controls the output electrical signal, and the regulated light beam controls the output electrical signal by indirectly changing the strain gradient of the flexural photovoltaic layer (4). The electrical signal output by the flexural photovoltaic layer (4) is the optical calculation result of the two beams of light.

5. The photovoltaic effect-based integrated optical computing chip element according to claim 1, characterized in that: The conductive electrode (2) is fixed on the substrate base layer (1); When the flexible photovoltaic layer (4) is connected to the conductive electrode (2) via the conductive contact piece (3), the conductive electrode (2) is connected to the conductive contact piece (3).

6. The photovoltaic effect-based integrated optical computing chip element according to claim 1, characterized in that: It comprises a polarization control component, which comprises a polarizer (6) and a half-wave plate (7).

7. The photovoltaic effect-based integrated optical computing chip element according to claim 1, characterized in that: The material of the substrate layer (1) includes one or more of a transparent dielectric material or an opaque material; The material of the conductive electrode (2) includes one or more of a conductive metal or a non-metallic material having a conductive property; The material of the photoinduced strain layer (5) includes one or more of a non-volatile phase change material or a photoinduced deformation material; The material of the flexible photovoltaic layer (4) includes semiconductor material; The material of the conductive contact element (3) includes one or more two-dimensional materials with conductive properties.

8. A method for preparing an integrated energy-computing optical computing chip element based on photovoltaic effect as claimed in any one of claims 1 to 7, characterized in that: The steps include: S1, making two conductive electrodes (2) on the substrate layer (1), or placing and fixing the two conductive electrodes (2) on the substrate layer (1); S2, forming or placing a photoinduced strain layer (5) on the substrate layer (1); S3, placing a flexible photovoltaic layer (4) on the photo-strain layer (5), wherein the flexible photovoltaic layer (4) is directly in contact with the two conductive electrodes (2), or the flexible photovoltaic layer (4) is only in contact with the photo-strain layer (5) but not in contact with the conductive electrodes (2), and when the flexible photovoltaic layer (4) is only in contact with the photo-strain layer (5) but not in contact with the conductive electrodes (2), step S4 is performed; Step S4, placing two conductive contact members (3) on the flexible photovoltaic layer (4) to contact it, wherein the conductive contact members (3) contact the two conductive electrodes (2) respectively.

9. An application of an integrated energy-computing optical computing chip element based on photovoltaic effect as claimed in any one of claims 1 to 7, characterized in that: The optical computing chip element is used to implement dual-beam optical computing.

10. An application of an integrated energy-computing optical computing chip element based on photovoltaic effect as claimed in any one of claims 1 to 7, characterized in that: The optical computing chip element is used to realize optical computing of sunlight and modulated light beams.

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