High-integration brick type TR module

Abstract

The invention relates to the technical field of wireless communication equipment, and particularly discloses a high-integration brick type TR module. Comprising a packaging shell which is provided with a packaging cavity and is provided with a radio frequency connection assembly, a substrate I arranged in the packaging shell, a substrate II parallel to the substrate I, a radio frequency assembly A arranged on the substrate II, a radio frequency assembly B arranged above the substrate I, and a radio frequency assembly C arranged at the bottom of the substrate I, a gap is formed between the first substrate and the second substrate, a radio frequency connecting structure connected with the radio frequency assembly C and the radio frequency connecting assembly is arranged in the gap, a low-frequency connector b connected with the radio frequency assembly B is arranged on the packaging shell, and the radio frequency assembly C and the radio frequency assembly B are connected through a low-frequency connector a. And the radio frequency component A is connected with the radio frequency component B. According to the invention, more channels can be arranged, the integration level is higher, the cavity utilization rate is higher, the cost is low, and the miniaturization is realized.

Description

Technical Field

[0001] The present invention relates to the technical field of wireless communication devices, and more specifically, to a highly integrated brick-type TR module. Background Art

[0002] In a phased array radar / communication system, the radio frequency transceiver module (TR module) accounts for a large proportion of the weight, power consumption, and cost of the entire system. As the phased array radar / communication system continues to develop towards miniaturization and high integration, the size of the TR module is constantly being compressed. The overall architecture of the TR module is generally divided into two ways: brick type and tile type. The brick-type TR module has a simple design, a large heat capacity, strong engineering capabilities, and a high maturity, but it is generally thick and heavy and has poor miniaturization capabilities, which limits the micro-systematization of the antenna. The tile-type TR module is small in size and light in weight, usually adopts a three-dimensional stacked structure, has a high functional integration degree, and is more conducive to the multi-functional integration or micro-systematization of the antenna. In application scenarios with high power, multi-polarization, multi-frequency, and other multi-functional high power density composites, the tile-type structure often cannot meet the application requirements, and the brick-type structure is still the first choice.

[0003] However, the existing brick-type structures mostly adopt a single-layer radio frequency layout structure, which is simple and convenient but has poor multi-functional integration capabilities; or the front and back layout of the module occupies a certain amount of power supply and control circuit space, and the back of the high-power chip cannot be occupied due to heat dissipation, resulting in limited multi-functional high-power integration capabilities. Summary of the Invention

[0004] The technical problem to be solved by the present invention is to provide a highly integrated brick-type TR module that can layout more channels, has a higher integration degree, a higher cavity utilization rate, and has the characteristics of low cost and miniaturization;

[0005] The solution adopted by the present invention to solve the technical problem is:

[0006] A highly integrated brick-type TR module includes a packaging shell having a packaging cavity and provided with radio frequency connection components, a first substrate disposed in the packaging shell and dividing the packaging cavity into an upper chamber and a lower chamber, a second substrate disposed in the upper chamber and parallel to the first substrate, a radio frequency component A disposed on the second substrate and connected to the radio frequency connection components, a radio frequency component B disposed above the first substrate and connected to the radio frequency connection components, and a radio frequency component C disposed at the bottom of the first substrate and connected to the radio frequency connection components;

[0007] A gap is formed between the first substrate and the second substrate, and a radio frequency connection structure connected to the radio frequency component C and the radio frequency connection components respectively is disposed in the gap.

[0008] A low-frequency connector b connected to the RF component B is provided on the encapsulation housing, and the RF component C and the RF component B are connected through a low-frequency connector a; the RF component A is connected to the RF component B.

[0009] In some possible embodiments, the RF component A includes an RF layer a provided on a second substrate and connected to an RF connection component, and a control power supply layer a provided on the RF layer a and connected to each other; the control power supply layer a is interconnected with the RF component B.

[0010] In some possible embodiments, the RF component B includes an RF layer b provided on a first substrate and connected to an RF connection component, and a control power supply layer b provided on the RF layer b and connected to each other; the control power supply layer b is interconnected with the low-frequency connector b; one end of the RF layer b is connected to the RF connection component through an RF connection structure, and the other end thereof is connected to the RF connection component through a transmission line.

[0011] In some possible embodiments, the RF component C includes an RF layer c provided on a side of the first substrate away from the second substrate and connected to an RF connection component, and a control power supply layer c provided on the RF layer c and connected to each other; the control power supply layer c is connected to the control power supply layer b through a low-frequency connector a installed on the first substrate; the control power supply layer c is interconnected with the low-frequency connector b.

[0012] In some possible embodiments, the control power supply layer c includes a PCB step board and components provided on the RF layer C, and the components are connected to RF devices on the RF layer c.

[0013] In some possible embodiments, the control power supply layer a, the control power supply layer b, and the control power supply layer c have the same structure.

[0014] In some possible embodiments, the RF connection component includes multiple groups of RF connectors respectively used in cooperation with the RF component A, the RF component B, and the RF component.

[0015] In some possible embodiments, the RF connection structure includes a pin located in a gap, with one end connected to the RF connector and the other end connected to the RF component B, and an insulating support member located in the gap and used to fix the pin.

[0016] In some possible embodiments, the pin is cylindrical and made of a metal conductor, including a copper column that is cylindrical and a gold layer plated on the outer side of the copper column.

[0017] In some possible embodiments, the encapsulation housing includes a housing, a lower cover installed on the housing and located below the first substrate, and an upper cover installed on the housing and located above the second substrate.

[0018] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0019] By adding a radio frequency layer b, the present invention has a higher integration level, a higher cavity utilization rate, and features low cost and miniaturization.

[0020] The radio frequency layer a, radio frequency layer b, and radio frequency layer c in the present invention can operate in the same frequency band, or different frequency band devices can be used according to requirements to make them operate in different frequency bands, featuring engineering composite multi-scenario applications.

[0021] The present invention has the characteristics of a tile-type TR module with high integration and a brick-type TR module with a relatively high heat capacity, capable of achieving high-power output. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 It is a schematic diagram of the internal structure of the present invention;

[0023] Figure 2 It is a schematic diagram of the radio frequency layer a and radio frequency layer b in the present invention;

[0024] Figure 3 It is a schematic diagram of the radio frequency c layer of the present invention;

[0025] Figure 4 It is a schematic diagram of the control power supply layer c of the present invention;

[0026] Figure 5 It is a schematic diagram of the control power supply layer a and control power supply layer b of the present invention;

[0027] Figure 6 It is a side view of the radio frequency pin structure of the present invention;

[0028] Wherein: 1 - encapsulation housing; 2 - upper cover; 3 - radio frequency connector; 4 - lower cover; 5 - control power supply layer a; 6 - radio frequency layer a; 7 - control power supply layer b; 8 - radio frequency layer b; 9 - control power supply layer c; 10 - radio frequency layer c; 11 - low-frequency connector a; 12 - low-frequency connector b; 13 - radio frequency connection structure; 14 - radio frequency device; 15 - transmission line; 16 - component; 131 - metal pin; 132 - insulating medium; 17, PCB step board; 18, substrate one; 19, substrate two. DETAILED DESCRIPTION OF THE INVENTION

[0029] In the present invention, unless otherwise clearly specified and defined, terms such as "installation", "connection", "linkage", "fixation" shall be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or integrated as a whole; it may be directly connected or indirectly connected through an intermediate medium, and it may be the internal communication between two components or the interaction relationship between two components. The "first", "second" and similar terms mentioned in this application do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, terms such as "a" or "one" do not indicate a quantity limitation, but indicate that there is at least one. In the implementation of this application, "and / or" describes the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, and B exists alone. In the description of the embodiments of this application, unless otherwise stated, the meaning of "plurality" refers to two or more. For example, a plurality of positioning posts means two or more positioning posts. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0030] The following is a detailed description of the present invention.

[0031] As Figures 1 - 6 shown, a highly integrated brick-type TR module includes a packaging housing 1 having a packaging cavity and provided with a radio frequency connection component, a first substrate 18 disposed in the packaging housing 1 to divide the packaging cavity into an upper chamber and a lower chamber, a second substrate 19 disposed in the upper chamber and parallel to the first substrate 18, a radio frequency component A disposed on the second substrate 19 and connected to the radio frequency connection component, a radio frequency component B disposed above the first substrate 18 and connected to the radio frequency connection component, and a radio frequency component C disposed at the bottom of the first substrate 18 and connected to the radio frequency connection component; there will be no first substrate 18 directly above the radio frequency component B;

[0032] The upper chamber is in a stepped shape, including a first chamber above the second substrate 19 and a second chamber above the first substrate 18 and communicating with the first chamber; the first chamber and the second chamber form a stepped structure, and the second chamber communicates with the gap directly below the second substrate 19; the radio frequency component A is disposed on the second substrate 19, and the radio frequency component B is disposed on the first substrate 18 and not disposed in the gap;

[0033] The packaging housing 1 is a metal housing or a co-fired ceramic housing. Specifically, the required pattern is customized according to the actual application scenario;

[0034] The packaging housing includes a housing body, a lower cover 4 mounted on the housing body and located below the first substrate 18, and an upper cover 2 mounted on the housing body and located above the second substrate 19;

[0035] The upper cover 2 and the lower cover 4 are respectively sealed and welded to the housing to achieve airtightness. They can be made of metal or kovar metal and can be customized with the required patterns according to the actual application scenarios.

[0036] The low-frequency connector a11 is a connector used for the interconnection of control signals and power supply signals, and is used for the interconnection of the control signals and power supply signals of the control power supply layer c9 and the control power supply layer a5. It can be a glass-sintered row of glass insulators, a vertical interconnection structure co-fired by row pins 131 and HTCC / LTCC processes, a vertical interconnection structure of a PCB multi-layer board, etc.

[0037] The low-frequency connector b12 is the same as the low-frequency connector a11, and is a connector used for the interconnection of control signals and power supply signals. It is used for the interconnection of the control signals and power supply signals of the TR module control line and the control power supply layer a5. It can be a glass-sintered row of connectors, a glass-sintered row of pins 131, an interconnection structure co-fired by HTCC / LTCC processes, a vertical interconnection structure of a PCB multi-layer board, etc.

[0038] The second substrate 19 is located above the first substrate 18, and a gap is formed between the first substrate 18 and the second substrate 19. A radio frequency connection structure 13 connected to the radio frequency component C and the radio frequency connection component respectively is arranged in the gap.

[0039] A low-frequency connector b12 connected to the radio frequency component B is arranged on the packaging housing 1, and the radio frequency component C and the radio frequency component B are connected through the low-frequency connector a11; the radio frequency component A is connected to the radio frequency component B.

[0040] In some possible implementation manners, the radio frequency component A includes a radio frequency layer a6 arranged on the second substrate 19 and connected to the radio frequency connection component, and a control power supply layer a5 arranged on the radio frequency layer a6 and connected to each other; the control power supply layer a5 is interconnected with the radio frequency component B.

[0041] In some possible implementation manners, the radio frequency component B includes a radio frequency layer b8 arranged on the first substrate 18 and connected to the radio frequency connection component, and a control power supply layer b7 arranged on the radio frequency layer b8 and connected to each other; the control power supply layer b7 is interconnected with the low-frequency connector b12; one end of the radio frequency layer b8 is connected to the radio frequency connection component through the radio frequency connection structure 13, and the other end is connected to the radio frequency connection component through the transmission line 15; the transmission line 15 is a radio frequency line used for transmitting signals, and realizes signal transmission between chips. It can be in the form of a microstrip line, a strip line, a coplanar waveguide, etc.

[0042] In some possible embodiments, the RF component C includes an RF layer c10 disposed on one side of the substrate 18 away from the substrate 19 and connected to the RF connection component, and a control power supply layer c9 disposed on the RF layer c10 and connected to each other; the control power supply layer c9 is connected to the control power supply layer b7 through a low-frequency connector a11 installed on the substrate 18; the control power supply layer c9 is interconnected with the low-frequency connector b12.

[0043] The RF layer a6 is a wiring layer for the RF device 14 of the TR module. The RF layer b8 and the RF layer c10 are the same as the RF layer a6, and each includes an RF chip, a microstrip circuit, and a transmission line 15 used; functions such as amplification of the received and transmitted signals of the TR module, amplitude modulation of the signal, and phase modulation of the signal are realized.

[0044] Specifically, the RF layer a6 is disposed on the substrate 19, and the RF connection component is interconnected with the RF device 14 on the RF layer a6 through a microstrip line; the RF layer b8 is disposed on the substrate 18, and the RF connection component is interconnected with the RF device 14 on the RF layer b8 through a microstrip line. The RF layer c10 is disposed on one side of the substrate 18 close to the lower cover 4, and the RF connection component is interconnected with the RF device 14 on the RF layer c10 through a microstrip line; the number of channels can be 1 channel or multiple channels; the RF device 14 is a device for processing high-frequency electromagnetic wave signals, including a low-noise amplifier, a power amplifier, a gain amplifier, a numerically controlled phase shifter, a numerically controlled attenuator, a numerically controlled delay line, a power divider, etc., and functions such as amplification of the received and transmitted signals of the TR module, amplitude modulation of the signal, and phase modulation of the signal are realized. It can be an integrated or discrete, packaged or unpackaged, heterogeneous three-dimensional stacked chip, etc.

[0045] Compared with the RF layer a6, the RF layer b8 uses an RF connection structure 13, enabling the RF layer a6 and the RF layer b8 to be arranged in the same-side encapsulation cavity, facilitating the assembly and repair of the RF device 14 on the RF layer b8; the number of channels can be 1 channel or multiple channels. The RF layer a6 and the RF layer b8 do not interfere with each other in the vertical direction due to the use of the pin 131 structure.

[0046] Compared with the RF layer a6 and the RF layer b8, the RF layer c10 is arranged on the other side of the substrate 18 away from the substrate 19; the number of channels can be 1 channel or multiple channels.

[0047] Further, the RF chips on the RF layer a6, RF layer b8, and RF layer c10 are packaged chips, integrated chips, or bare chips, which realize functions such as receiving and amplifying RF received signals and transmitting and amplifying RF transmitted signals, amplitude modulation, phase modulation, delay modulation, and power supply modulation of signals in the RF link. The RF chips used in the RF layer a6, RF layer b8, and RF layer c10 can use chips with different operating frequency bands or the same operating frequency band, or form an RF microsystem by integrating a control circuit and a power supply circuit, etc.

[0048] In some possible implementation manners, the control power supply layer c9 includes a PCB step board 17 and components 16 disposed on the RF layer c10, and the components 16 are connected to the RF devices 14 on the RF layer c10.

[0049] In some possible implementation manners, the control power supply layer a5, control power supply layer b7, and control power supply layer c9 have the same structure.

[0050] The control power supply layer a5 is a wiring layer for a control circuit and a power supply circuit. Using the PCB step board 17 as a substrate and components 16 such as a power conversion chip, a driver chip, resistors, capacitors, and inductors, it realizes functions such as power conversion function, power supply modulation function, and serial-parallel conversion. It is placed above the RF layer a6 and is interconnected with the RF devices 14 on the RF layer a6 using gold wires to supply power to the RF devices 14 in the RF layer a6.

[0051] The control power supply layer b7 is a wiring layer for a control circuit and a power supply circuit. Using the PCB step board 17 as a substrate and components 16 such as a power conversion chip, a driver chip, resistors, capacitors, and inductors, it realizes functions such as power conversion function, power supply modulation function, and serial-parallel conversion. It is placed above the RF layer b8 and is interconnected with the RF devices 14 on the RF layer b8 using gold wires to supply power to the RF devices 14 in the RF layer b8.

[0052] The control power supply layer c9 is a wiring layer for a control circuit and a power supply circuit. Using the PCB step board 17 as a substrate and components 16 such as a power conversion chip, a driver chip, resistors, capacitors, and inductors, it realizes functions such as power conversion function, power supply modulation function, and serial-parallel conversion. It is placed above the RF layer c10 and is interconnected with the RF devices 14 on the RF layer c10 using gold wires to supply power to the RF devices 14 in the RF layer c10.

[0053] Further, the power conversion chip is a packaged chip, an integrated chip, or a bare chip, which realizes functional circuits such as power conversion, serial-parallel signal conversion, and power supply modulation, or forms an RF microsystem by integrating an RF signal amplification link, etc.

[0054] In some possible embodiments, the radio frequency connection component includes multiple groups of radio frequency connectors 3 respectively used in cooperation with radio frequency component A, radio frequency component B, and radio frequency components;

[0055] The radio frequency connector 3 is used to connect coaxial cables, microstrip lines, and other transmission lines to achieve low-loss transmission of radio frequency signals. Radio frequency connectors 3 such as SMP series, SSMP series, and glass insulators can be used;

[0056] The radio frequency connector 3 and the low-frequency connector b12 are welded on the package housing, and the low-frequency connector a11 is welded on the first substrate 18. The upper cover 2 and the lower cover 4 are welded together with the package housing, which can make the module airtight and protect the internal devices;

[0057] In some possible embodiments, the radio frequency connection structure 13 is a cable, a waveguide coaxial conversion structure, a radio frequency connector 3, etc., to achieve low-loss transmission of radio frequency signals; specifically, the radio frequency connection structure 13 includes a pin 131 located in the gap, with one end connected to the radio frequency connector 3 and the other end connected to the radio frequency component B, and an insulating support 132 located in the gap and used to fix the pin 131;

[0058] Further, the insulating support 132 is a non-metallic non-conductive dielectric material, which can be polytetrafluoroethylene, glass, or other insulating materials.

[0059] In some possible embodiments, the pin 131 is cylindrical and made of a metal conductor, including a copper column in the shape of a cylinder and a gold layer plated on the outside of the copper column; further, different metal materials such as copper and gold or kovar metal can be used.

[0060] During use, the control signal and power supply signal of the module are transmitted to the control power supply layer b7 through the low-frequency connector b12, and then part of the control signal and power supply signal are transmitted to the control power supply layer a5 and the control power supply layer c9; after these input signals are subjected to level conversion and serial-parallel conversion by the component 16, they are supplied to the radio frequency devices 14 on the radio frequency layer a6, the radio frequency layer b8, and the radio frequency layer c10 through gold wires for use, realizing functions such as receiving and transmitting radio frequency receiving signals and transmitting signals, amplitude modulation, phase modulation, delay modulation, and power supply modulation of the signals.

[0061] The present invention is not limited to the foregoing specific embodiments. The present invention extends to any new feature or any new combination disclosed in this specification, as well as any new method or process step or any new combination disclosed.

Claims

1. A highly integrated brick-type TR module, characterized in that: It includes a packaging shell having a packaging cavity and provided with a radio frequency connection component, a substrate 1 arranged in the packaging shell to divide the packaging cavity into an upper cavity and a lower cavity, a substrate 2 arranged in the upper cavity and parallel to the substrate 1, a radio frequency component A arranged on the substrate 2 and connected to the radio frequency connection component, a radio frequency component B arranged above the substrate 1 and connected to the radio frequency connection component, and a radio frequency component C arranged at the bottom of the substrate 1 and connected to the radio frequency connection component; A gap is formed between the first substrate and the second substrate, and a radio frequency connection structure connected to the radio frequency component C and the radio frequency connection component is arranged in the gap. A low-frequency connector b connected to the RF component B is arranged on the packaging shell, and the RF component C and the RF component B are connected via the low-frequency connector a; and the RF component A and the RF component B are connected.

2. A highly integrated brick-type TR module according to claim 1, characterized in that: The RF component A includes a RF layer a arranged on the substrate 2 and connected to the RF connection component, and a control power supply layer a arranged on the RF layer a and connected to each other; the control power supply layer a is interconnected with the RF component B.

3. A highly integrated brick-type TR module according to claim 2, characterized in that: The RF component B comprises a RF layer b disposed on the substrate 1 and connected to the RF connection component, and a control power supply layer b disposed on the RF layer b and connected to each other; the control power supply layer b is interconnected with the low-frequency connector b; One end of the radio frequency layer b is connected to the radio frequency connection component via a radio frequency connection structure, and the other end thereof is connected to the radio frequency connection component via a transmission line.

4. A highly integrated brick-type TR module according to claim 3, characterized in that: The RF component C includes a RF layer c arranged on a side of substrate one away from substrate two and connected to the RF connection component, and a control power supply layer c arranged on the RF layer c and connected to each other; the control power supply layer c is connected to the control power supply layer b through a low-frequency connector a installed on substrate one; the control power supply layer c is interconnected with the low-frequency connector b.

5. A highly integrated brick-type TR module according to claim 4, characterized in that: The control power supply layer c includes a PCB step plate and components arranged on the radio frequency layer C, and the components are connected to the radio frequency devices on the radio frequency layer c.

6. A highly integrated brick-type TR module according to claim 5, characterized in that: The control power supply layer a, the control power supply layer b and the control power supply layer c have the same structure.

7. The highly integrated brick-type TR module according to claim 1, characterized in that: The radio frequency connection component includes multiple groups of radio frequency connectors respectively used with the radio frequency component A, the radio frequency component B, and the radio frequency component.

8. The highly integrated brick-type TR module according to claim 7, characterized in that: The RF connection structure includes a pin located in the gap, one end of which is connected to the RF connector and the other end of which is connected to the RF component B, and an insulating support member located in the gap and used to fix the pin.

9. A highly integrated brick-type TR module according to claim 8, characterized in that: The pin is cylindrical and made of a metal conductor, including a copper column in a cylindrical shape and a gold layer plated on the outside of the copper column.

10. A highly integrated brick-type TR module according to any one of claims 1 to 9, characterized in that: The packaging shell comprises a shell, a lower cover installed on the shell and located below the first substrate, and an upper cover installed on the shell and located above the second substrate.

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