Fast recovery diode and forming detection equipment thereof

Abstract

The invention discloses a fast recovery diode and forming detection equipment thereof, and relates to the technical field of fast recovery diodes, the fast recovery diode comprises a main body structure, the main body structure comprises an N-type silicon material substrate layer, and an intrinsic semiconductor layer and a P-type silicon material layer are sequentially arranged on the N-type silicon material substrate layer; wherein an anode end and a cathode end are formed on one side of the main body structure, the anode end is provided with an anode piece, and the cathode end is provided with a cathode piece; before the fast recovery diodes are detected, the high-temperature detection box can be pre-heated, the low-temperature detection box can be pre-cooled, when the fast recovery diodes to be detected are transferred to the corresponding detection box, the fast recovery diodes can quickly reach the temperature interval to be detected, and correspondingly, after one group of fast recovery diodes are detected, the detection time is shortened, and the detection efficiency is improved. And the temperature of the detection box can be kept unchanged, so that the temperature does not need to be adjusted again when the next group of fast recovery diodes is detected.

Description

Technical Field

[0001] The present invention relates to the technical field of fast recovery diodes, and particularly relates to a fast recovery diode and its forming detection equipment. Background Art

[0002] A fast recovery diode is a special semiconductor diode, and its core feature lies in its extremely short reverse recovery time and excellent switching performance. The reverse recovery time is usually below 5 microseconds (μs), and can even reach the nanosecond (ns) level. This characteristic enables the fast recovery diode to perform outstandingly in high-frequency and high-speed switching circuits, and becomes an indispensable important component in the modern electronics industry.

[0003] After the fast recovery diode is formed, it needs to be subjected to high and low temperature tests. The performance of the fast recovery diode will change with the temperature. Through high and low temperature tests, the electrical performance of the diode at different temperatures, such as forward voltage drop, reverse leakage current, etc., can be evaluated, so as to understand its temperature characteristics. During the high and low temperature test process, there may be diodes with performance degradation or damage. These defective products can be screened out through testing to avoid flowing into the market, thereby improving the overall quality of the product.

[0004] During the detection process, usually a set of high and low temperature test chambers are set up. When detecting, the high temperature, low temperature values, the respective holding times, the temperature change time, and the number of cycles of the high and low temperature test chambers are set. For example, the high temperature can be set to 125°C (or higher), and the low temperature can be set to -40°C (or lower). The holding time and the temperature change time are determined according to specific test standards or requirements. However, in actual applications, the high and low temperature conversion of the test chamber usually requires a certain amount of time, which is difficult to meet the forming detection requirements of a large number of fast recovery diodes. Summary of the Invention

[0005] The purpose of the present invention is to provide a fast recovery diode and its forming detection equipment, and solve the following technical problems:

[0006] Currently, when detecting the forming of fast recovery diodes, usually a set of high and low temperature test chambers are set up, and the conversion efficiency of high and low temperatures is relatively low.

[0007] The purpose of the present invention can be achieved through the following technical solutions:

[0008] A fast recovery diode includes a main body structure, and the main body structure includes an N-type silicon material substrate layer, an intrinsic semiconductor layer and a P-type silicon material layer are sequentially arranged on the N-type silicon material substrate layer;

[0009] Wherein, one side of the column main body structure forms an anode end and a cathode end, an anode sheet is provided at the anode end, and a cathode sheet is provided at the cathode end.

[0010] A forming detection device for a fast recovery diode, comprising a high-temperature detection box and a low-temperature detection box, with a normal-temperature detection area provided between the high-temperature detection box and the low-temperature detection box;

[0011] Among them, detection modules are evenly distributed at the main high-temperature detection box, low-temperature detection box and normal-temperature detection area for electrically detecting the fast recovery diode;

[0012] It further includes a transfer module, which is used to sequentially transfer the positioned fast recovery diodes to the normal-temperature detection area, high-temperature detection box and low-temperature detection box for detection.

[0013] Preferably, a detection table is slidably arranged at the main normal-temperature detection area. The detection table is connected to the transfer module, and a positioning module for positioning the fast recovery diode is arranged on the detection table. A first chute for slidably embedding the detection table is opened at the bottom of the high-temperature detection box, and a second chute for slidably embedding the detection table is opened at the bottom of the low-temperature detection box;

[0014] Among them, a first through groove for communicating with the inside of the high-temperature detection box is opened on the first chute, and a second through groove for communicating with the inside of the low-temperature detection box is opened on the second chute.

[0015] Preferably, a first sealing plate for closing the first through groove is slidably embedded in the main first chute, and a second sealing plate for closing the second through groove is slidably arranged in the second chute. Among them, the first sealing plate and the second sealing plate are connected to an elastic module arranged outside the detection box.

[0016] Preferably, the main elastic module includes a guide rod fixedly arranged on the outer wall of the detection box. An L-shaped support seat fixed to the sealing plate is slidably sleeved on the guide rod, and a first spring is arranged on the guide rod.

[0017] Preferably, the main positioning module includes a positioning groove opened on the detection table. A bearing table for carrying the fast recovery diode is slidably embedded in the positioning groove. A first reserved groove for embedding the main body structure is opened on the bearing table, and a second reserved groove for embedding the anode plate and the cathode plate is also opened on the bearing table.

[0018] Preferably, the main transfer module includes a translation mechanism fixed to the bottom of the detection box, and the driving end of the translation mechanism is fixed to one side of the detection table.

[0019] Preferably, a loading table is also arranged on one side of the main normal-temperature detection area. A driving mechanism is fixedly arranged on the loading table. The driving end of the driving mechanism is connected to a driving plate. A U-shaped plate is fixedly arranged on one side of the driving plate. A push plate is fixedly arranged on one side of the bottom of the bearing table;

[0020] Among them, a guide groove for embedding the push plate is opened at the bottom of the main positioning groove.

[0021] Preferably, the main first reserved groove is a through groove that penetrates through the upper and lower ends. A bearing plate is slidably embedded in the first reserved groove. A support rod is fixedly arranged at the bottom of the bearing plate. A guide wheel is rotatably arranged at the bottom of the support rod. A limiting rod is fixedly arranged at the bottom of the bearing platform. An L-shaped support plate fixed to the bearing plate is slidably sleeved on the limiting rod. A second spring is arranged on the limiting rod.

[0022] Wherein, a wedge-shaped plate is fixedly arranged on the main feeding platform. An inclined guide surface is formed on one side of the wedge-shaped plate facing the normal temperature detection area.

[0023] Preferably, the main detection module includes lifting cylinders respectively arranged on the normal temperature detection area, the high-temperature detection box and the low-temperature detection box. The lifting cylinders are fixed on the limiting frame. The driving end of the lifting cylinder is fixed to the lifting plate. Two groups of guide seats are fixedly arranged on one side of the lifting plate. Electric property detection pieces corresponding to the anode plate and the cathode plate are respectively fixedly arranged at the bottoms of the guide seats. The electric property detection pieces are connected to an electric property detector fixedly arranged on the lifting plate through wires.

[0024] Advantages of the present invention:

[0025] (1) After the fast recovery diode of the present invention is formed, it can be transferred to the normal temperature detection area through the transfer module. At normal temperature, its electric properties are detected by the detection module. After the normal temperature detection is completed, it can be transferred to the high-temperature detection box through the transfer module. At high temperature, its electric properties are detected by the detection module. After the high-temperature detection is completed, it can be transferred to the low-temperature detection box through the transfer module. At low temperature, its electric properties are detected again by the detection module. In the present invention, before detecting the fast recovery diode, the high-temperature detection box can be preheated and the low-temperature detection box can be pre-cooled. When the fast recovery diode to be detected is transferred to the corresponding detection box, it can quickly reach the temperature range to be detected. Correspondingly, when a group of fast recovery diodes are detected, the temperature of the detection box can remain unchanged. Therefore, when detecting the next group of fast recovery diodes, there is no need to adjust the temperature again, which not only improves the detection efficiency, but also avoids the phenomenon of excessive cost caused by the large temperature change range of the detection box. At the same time, the frequent and large temperature change will also affect the service life of the detection box.

[0026] (2) In the initial state of the present invention, the first sealing plate is in a state of closing the first through groove, and the second sealing plate is in a state of closing the second through groove. When the transfer module drives the detection table to move towards the high-temperature detection box, the detection table can push the first through groove to slide towards the side of the high-temperature detection box, so as to compress the elastic module and generate elastic force. During this process, since the detection table is in close contact with the edge of the first sealing plate, the high-temperature air in the high-temperature detection box will not leak. When the high-temperature detection is completed and the transfer module drives the detection table to reset, the elastic module can synchronously drive the first sealing plate to reset. Correspondingly, the movement process of the second sealing plate is the same as that of the first sealing plate, which will not be elaborated here. The present invention can always keep the high-temperature or low-temperature air in the detection box in a closed state to avoid the phenomenon of temperature loss, with better heat preservation performance and reduced detection costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] The present invention will be further described below with reference to the accompanying drawings.

[0028] Figure 1 is a schematic structural diagram of a fast recovery diode of the present invention;

[0029] Figure 2 is a sectional structural diagram of a fast recovery diode of the present invention;

[0030] Figure 3 is a schematic structural diagram of a forming detection device for a fast recovery diode of the present invention;

[0031] Figure 4 is a schematic structural diagram of a forming detection device for a fast recovery diode of the present invention;

[0032] Figure 5 is a schematic structural diagram of a forming detection device for a fast recovery diode of the present invention;

[0033] Figure 6 is a schematic structural diagram of a forming detection device for a fast recovery diode of the present invention;

[0034] Figure 7 is a schematic structural diagram of a forming detection device for a fast recovery diode of the present invention;

[0035] Figure 8 is a schematic structural diagram of a forming detection device for a fast recovery diode of the present invention;

[0036] Figure 9 is a schematic structural diagram of a forming detection device for a fast recovery diode of the present invention;

[0037] Figure 10 is a schematic structural diagram of a forming detection device for a fast recovery diode of the present invention;

[0038] Figure 11 It is a schematic structural diagram of a forming detection device for a fast recovery diode of the present invention;

[0039] Figure 12 It is a schematic structural diagram of a forming detection device for a fast recovery diode of the present invention.

[0040] In the figure: 1, high-temperature detection box; 2, low-temperature detection box; 3, normal-temperature detection area; 4, loading table; 5, detection module; 6, main body structure; 7, bearing plate; 8, guide rod; 9, driving plate; 101, first through groove; 102, first sealing plate; 103, first sliding groove; 201, second through groove; 202, second sealing plate; 203, second sliding groove; 301, detection table; 302, translation mechanism; 303, positioning groove; 304, guide groove; 305, bearing table; 306, first reserved groove; 307, second reserved groove; 308, push plate; 401, driving mechanism; 402, wedge plate; 403, inclined guide surface; 501, lifting cylinder; 502, lifting plate; 503, limiting frame; 504, detector; 505, circuit; 506, electrical detection piece; 507, guide seat; 601, cathode piece; 602, anode piece; 603, P-type silicon material layer; 604, intrinsic semiconductor layer; 605, N-type silicon material substrate layer; 701, support rod; 702, guide wheel; 703, L-shaped support plate; 704, limiting rod; 705, second spring; 801, L-shaped support; 802, first spring; 901, U-shaped plate. Specific embodiments

[0041] Next, the technical solutions of the present invention will be clearly and completely described in conjunction with the embodiments. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0042] Embodiment 1

[0043] Please refer to Figures 1-2 As shown, the present invention is a fast recovery diode, including a main body structure 6. The main body structure 6 includes an N-type silicon material substrate layer 605, on which an intrinsic semiconductor layer 604 and a P-type silicon material layer 603 are sequentially arranged;

[0044] Specifically, the P-type silicon material layer 603 is a kind of semiconductor material, and its majority carriers are holes inside. In the fast recovery diode, the P-type silicon material layer 603 serves as one end of the diode and forms a PN junction with the N-type silicon material substrate layer 605;

[0045] The intrinsic semiconductor layer 604, also known as the base region layer, is one of the main differences between a fast recovery diode and a common PN junction diode. It is a very thin intrinsic semiconductor layer 604 (i-layer) added between the P-type silicon material layer 603 and the N-type silicon material substrate layer 605, and is also known as the I-layer in the PIN structure. Since the base region is very thin, the reverse recovery charge is very small, which greatly reduces the reverse recovery time (trr) value and reduces the transient forward voltage drop, enabling the tube to withstand a very high reverse operating voltage.

[0046] The N-type silicon material substrate layer 605 is also a type of semiconductor material, and the majority carriers inside it are free electrons. In a fast recovery diode, the N-type silicon material substrate layer 605 and the P-type silicon material layer 603 form the other end of the PN junction.

[0047] Among them, on one side of the main body structure 6, an anode end and a cathode end are formed. An anode piece 602 is provided at the anode end, and a cathode piece 601 is provided at the cathode end.

[0048] Embodiment 2

[0049] Based on Embodiment 1, please refer to Figures 3-5 , a forming detection device for a fast recovery diode, including a high-temperature detection box 1 and a low-temperature detection box 2, and a normal-temperature detection area 3 is provided between the high-temperature detection box 1 and the low-temperature detection box 2;

[0050] Among them, detection modules 5 are evenly arranged at the high-temperature detection box 1, the low-temperature detection box 2 and the normal-temperature detection area 3 for electrically detecting the fast recovery diode;

[0051] It further includes a transfer module, and the transfer module is used to sequentially transfer the positioned fast recovery diode to the normal-temperature detection area 3, the high-temperature detection box 1 and the low-temperature detection box 2 for detection;

[0052] It can be explained that after the fast recovery diode is formed, it can be transferred to the normal temperature detection area 3 through the transfer module, and at normal temperature, it can be electrically tested by the detection module 5. After the normal temperature test is completed, it can be transferred to the high temperature test box 1 through the transfer module, and at high temperature, it can be electrically tested by the detection module 5. After the high temperature test is completed, it can be transferred to the low temperature test box 2 through the transfer module, and at low temperature, it can be electrically tested again by the detection module 5. In this embodiment, before the fast recovery diode is tested, the high temperature test box 1 can be pre-heated and the low temperature test box 2 can be pre-cooled. After the fast recovery diode to be tested is transferred to the corresponding test box, it can quickly reach the temperature range to be tested. Accordingly, after a group of fast recovery diodes are tested, the temperature of the test box can remain unchanged. Therefore, when the next group of fast recovery diodes are tested, there is no need to adjust the temperature again. This not only improves the test efficiency, but also avoids the phenomenon of excessive cost caused by excessive temperature change range of the test box. At the same time, frequent and large temperature changes will also affect the service life of the test box.

[0053] In this example, see Figures 3-5 , a detection table 301 is slidably arranged at 3 places in the normal temperature detection area, the detection table 301 is connected to the transfer module, a positioning module for positioning the fast recovery diode is arranged on the detection table 301, a first slide groove 103 for slidingly embedding the detection table 301 is opened at the bottom of the high temperature detection box 1, and a second slide groove 203 for slidingly embedding the detection table 301 is opened at the bottom of the low temperature detection box 2, wherein the first slide groove 103 is opened with a first through groove 101 for communicating with the inside of the high temperature detection box 1, and the second slide groove 203 is opened with a second through groove 201 for communicating with the inside of the low temperature detection box 2; Specifically, when the fast recovery diode is detected in this embodiment, firstly through The fast recovery diode is positioned on the detection table 301 by the positioning module. After the positioning is completed, the normal temperature detection is carried out. After the detection is completed, the transfer module drives the detection table 301 to slide and embed into the first slide groove 103, and the fast recovery diode enters the high temperature detection box 1 through the first through groove 101 for high temperature detection. After the detection is completed, the transfer module drives the detection table 301 to move toward the low temperature detection box 2 to embed the detection table 301 into the second slide groove 203, and the fast recovery diode enters the low temperature detection box 2 through the second through groove 201 for low temperature detection. After the detection is completed, the transfer module drives the fast recovery diode to move to the normal temperature detection area 3 to facilitate unloading.

[0054] As a further solution of this embodiment, please refer to Figure 5, when the inspection table 301 is in the position of the normal temperature inspection area 3, in order to prevent the high-temperature air inside the high-temperature inspection box 1 from leaking through the first through groove 101 and the low-temperature air inside the low-temperature inspection box 2 from leaking through the second through groove 201, a first sealing plate 102 for closing the first through groove 101 is slidably embedded in the first sliding groove 103, and a second sealing plate 202 for closing the second through groove 201 is slidably arranged in the second sliding groove 203. Among them, the first sealing plate 102 and the second sealing plate 202 are connected to an elastic module arranged outside the inspection box; it can be explained that in the initial state, the first sealing plate 102 is in a state of closing the first through groove 101, and the second sealing plate 202 is in a state of closing the second through groove 201. When the transfer module drives the inspection table 301 to move in the direction of the high-temperature inspection box 1, the inspection table 301 can push the first through groove 101 to slide towards the side of the high-temperature inspection box 1 (reference can be made to Figure 6 ), so as to compress the elastic module and generate elastic force. During this process, since the inspection table 301 is in close contact with the edge of the first sealing plate 102, the high-temperature air in the high-temperature inspection box 1 will not leak. When the high-temperature inspection is completed and the transfer module drives the inspection table 301 to reset, the elastic module can synchronously drive the first sealing plate 102 to reset. Correspondingly, the movement process of the second sealing plate 202 is the same as that of the first sealing plate 102, which will not be elaborated here. In this embodiment, the high-temperature or low-temperature air in the inspection box can always be kept in a closed state to avoid the phenomenon of temperature loss, with better heat preservation performance and reduced inspection costs.

[0055] Specifically, please refer to Figure 6 , the elastic module includes a guide rod 8 fixedly arranged on the outer wall of the inspection box. An L-shaped support 801 fixed to the sealing plate is slidably sleeved on the guide rod 8. A first spring 802 is arranged on the guide rod 8. One end of the first spring 802 is fixed to the end of the guide rod 8, and the other end is fixed to the L-shaped support 801; it can be explained that when the sealing plate slides towards the inspection box side, the first spring 802 can be compressed by the L-shaped support 801 to generate elastic force, so as to facilitate the subsequent reset of the sealing plate.

[0056] Please refer to Figure 4 , Figure 7 and Figures 9-11, The positioning module includes a positioning groove 303 formed on the detection table 301. A carrier table 305 for carrying the fast recovery diode is slidably embedded in the positioning groove 303. A first reserved groove 306 for embedding the main body structure 6 is formed on the carrier table 305, and a second reserved groove 307 for embedding the anode plate 602 and the cathode plate 601 is also formed on the carrier table 305. It should be noted that when detecting the fast recovery diode, the main body structure 6 of the fast recovery diode is embedded in the first reserved groove 306, and its anode plate 602 and cathode plate 601 are respectively embedded in the second reserved groove 307. After the embedding is completed, the upper surfaces of the main body structure 6, the anode plate 602 and the cathode plate 601 are flush with the upper surface of the carrier table 305. Therefore, when the detection table 301 is pushed into the sliding groove, the air in the detection box will not leak, further improving the heat preservation effect.

[0057] In this embodiment, please refer to Figure 5 , The transfer module includes a translation mechanism 302 fixed to the bottom of the detection box. The driving end of the translation mechanism 302 is fixed to one side of the detection table 301. It should be noted that when driving the detection table 301 to move, it can be driven by the translation mechanism 302.

[0058] Furthermore, please refer to Figure 3 , Figure 9 and Figure 12 , To facilitate the loading and unloading of the fast recovery diode, a loading platform 4 is also arranged on one side of the normal temperature detection area 3. A driving mechanism 401 is fixedly arranged on the loading platform 4. The driving end of the driving mechanism 401 is connected to the driving plate 9. A U-shaped plate 901 is fixedly arranged on one side of the driving plate 9. Among them, a push plate 308 is fixedly arranged on one side of the bottom of the carrier table 305. It should be noted that when the detection table 301 is in the normal temperature detection area 3, the push plate 308 is in a state of being embedded in the U-shaped plate 901. When loading and unloading are required, the driving mechanism 401 drives the driving plate 9 to move towards the loading platform 4. The driving plate 9 can drive the carrier table 305 to move synchronously towards the loading platform 4 through the U-shaped plate 901 and the push plate 308, so as to facilitate loading and unloading. After the loading is completed, the carrier table 305 can be driven to be re-embedded in the positioning groove 303. Since the push plate 308 is slidably embedded in the U-shaped plate 901, when the detection table 301 is driven to move horizontally, the U-shaped plate 901 will not interfere with the movement of the push plate 308.

[0059] In addition, the translation mechanism 302 and the driving mechanism 401 in this embodiment can both adopt a screw-nut transmission mechanism, a gear-rack transmission mechanism or a synchronous belt transmission mechanism. This embodiment does not limit this, as long as it can drive the corresponding components to move in a straight line, and this is not limited.

[0060] Please refer to Figure 8, to avoid interference of the push plate 308 with the movement of the detection table 301, in this embodiment, a guide groove 304 is opened at the bottom of the positioning groove 303; specifically, when the bearing table 305 is embedded in the positioning groove 303, the push plate 308 can be embedded in the guide groove 304, with higher stability.

[0061] In addition, for the convenience of loading and unloading the fast recovery diode, please refer to Figure 3 , Figures 9-11 , the first reserved groove 306 is a through groove that penetrates through the upper and lower ends. A bearing plate 7 is slidably embedded in the first reserved groove 306. A support rod 701 is fixedly arranged at the bottom of the bearing plate 7. A guide wheel 702 is rotatably arranged at the bottom of the support rod 701. A limit rod 704 is fixedly arranged at the bottom of the bearing table 305. An L-shaped support plate 703 fixed to the bearing plate 7 is slidably sleeved on the limit rod 704. A second spring 705 is arranged on the limit rod 704. One end of the second spring 705 is fixed to the bearing table 305, and the other end is fixed to the L-shaped support plate 703. Among them, a wedge plate 402 is fixedly arranged on the loading table 4. An inclined guide surface 403 is opened on one side of the wedge plate 402 facing the normal temperature detection area 3; it can be explained that when the fast recovery diode is placed in the first reserved groove 306, it can be carried by the bearing plate 7. When the driving mechanism 401 drives the bearing table 305 to move towards the loading table 4, the guide wheel 702 can drive the bearing plate 7 to rise above the first reserved groove 306 by rolling and abutting against the inclined guide surface 403 (please refer to Figure 11 ), thereby facilitating the loading and unloading of the fast recovery diode. At this time, the second spring 705 can be compressed by the L-shaped support plate 703 to generate elastic force. After the loading is completed, as the bearing table 305 moves towards the normal temperature detection area 3, the second spring 705 can drive the bearing plate 7 to reset and contract into the first reserved groove 306, so that the fast recovery diode can be embedded in the first reserved groove 306, with higher stability.

[0062] In this embodiment, please refer to Figure 8 , the detection module includes lifting cylinders 501 respectively arranged on the normal temperature detection area 3, the high-temperature detection box 1, and the low-temperature detection box 2. The lifting cylinders 501 are fixed on the limit frame 503. The driving end of the lifting cylinder 501 is fixed to the lifting plate 502. Two groups of guide seats 507 are fixedly arranged on one side of the lifting plate 502. Electric property detection pieces 506 corresponding to the anode plate 602 and the cathode plate 601 are respectively fixedly arranged at the bottoms of the guide seats 507. The electric property detection pieces 506 are connected to an electric property detector 504 fixedly arranged on the lifting plate 502 through a circuit 505; it can be explained that when the positioned recovery diode moves to the corresponding detection position, the lifting cylinder 501 can be driven to drive the lifting plate 502 to descend. The lifting plate 502 synchronously drives the electric property detection pieces 506 to descend and contact the anode plate 602 and the cathode plate 601 respectively. Furthermore, the electric property of the fast recovery diode can be detected by the electric property detector 504;

[0063] It should be noted that the electrical detector 504 in this embodiment is an existing device, and its specific structure and model are not limited, as long as it can meet the electrical detection ability of the fast recovery diode.

[0064] In addition, in this embodiment, by connecting the carrier plate 7 with the elastic structure, when the electrical detection piece 506 contacts the anode piece 602 and the cathode piece 601, it has a certain buffering effect, avoiding the phenomenon of structural damage caused by excessive rigidity during contact.

[0065] A detection method for a forming detection device of a fast recovery diode includes the following steps:

[0066] Please refer to Figures 3-5 , S1. The driving mechanism 401 drives the driving plate 9 to move towards the feeding table 4. The driving plate 9 drives the carrier table 305 to move synchronously towards the feeding table 4 through the U-shaped plate 901 and the pushing plate 308;

[0067] Please refer to Figures 7-11 , S2. Embed the main structure 6 of the fast recovery diode into the first reserved groove 306, and embed its anode piece 602 and cathode piece 601 into the second reserved grooves 307 respectively;

[0068] S3. After the feeding is completed, the carrier table 305 can be driven to be re-embedded into the positioning groove 303;

[0069] S4. At normal temperature, perform electrical detection on it through the detection module 5;

[0070] S5. After the normal temperature detection is completed, it can be transferred to the high-temperature detection box 1 through the transfer module. At high temperature, perform electrical detection on it through the detection module 5;

[0071] S6. After the high-temperature detection is completed, it can be transferred to the low-temperature detection box 2 through the transfer module. At low temperature, perform electrical detection on it again through the detection module 5.

[0072] In the description of the present invention, it should be understood that the terms "upper", "lower", "left", "right", etc. indicate the orientation or position relationship based on the orientation or position relationship shown in the drawings. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, specific orientation structure and operation. Therefore, it cannot be understood as a limitation to the present invention. In addition, "first" and "second" are only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, unless otherwise specified, the meaning of "plurality" is two or more.

[0073] In the description of the present invention, it should be noted that unless otherwise clearly specified and defined, the terms "installed", "connected", "connected" and the like should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or an integral connection; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the communication inside two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.

[0074] The above has described in detail an embodiment of the present invention, but the content described is only a preferred embodiment of the present invention and cannot be considered as limiting the scope of implementation of the present invention. All equivalent changes and improvements made according to the scope of the application of the present invention should still fall within the scope covered by the patent of the present invention.

Claims

1. A fast recovery diode, comprising a main structure (6), characterized in that: The main structure (6) comprises an N-type silicon material substrate layer (605), on which an intrinsic semiconductor layer (604) and a P-type silicon material layer (603) are arranged in sequence; Wherein, an anode end and a cathode end are formed on one side of the column main body structure (6), the anode end is provided with an anode sheet (602), and the cathode end is provided with a cathode sheet (601).

2. A fast recovery diode forming detection device as claimed in claim 1, characterized in that: It comprises a high temperature detection box (1) and a low temperature detection box (2), wherein a normal temperature detection area (3) is provided between the high temperature detection box (1) and the low temperature detection box (2); Wherein, the main high-temperature detection box (1), the low-temperature detection box (2) and the normal-temperature detection area (3) are all provided with detection modules (5) for performing electrical detection on the fast recovery diode; It also includes a transfer module, which is used to transfer the positioned fast recovery diode to the normal temperature detection area (3), the high temperature detection box (1) and the low temperature detection box (2) in sequence for detection.

3. The forming detection device of a fast recovery diode according to claim 2, characterized in that: A detection platform (301) is slidably arranged at the main normal temperature detection area (3), the detection platform (301) is connected to the transfer module, a positioning module for positioning the fast recovery diode is arranged on the detection platform (301), a first slide groove (103) for slidingly embedding the detection platform (301) is provided at the bottom of the high temperature detection box (1), and a second slide groove (203) for slidingly embedding the detection platform (301) is provided at the bottom of the low temperature detection box (2); The main first slide groove (103) is provided with a first through groove (101) for communicating with the interior of the high-temperature detection box (1), and the second slide groove (203) is provided with a second through groove (201) for communicating with the interior of the low-temperature detection box (2).

4. The forming detection device of a fast recovery diode according to claim 3 is characterized in that: A first sealing plate (102) for closing the first through groove (101) is slidably embedded in the main first sliding groove (103), and a second sealing plate (202) for closing the second through groove (201) is slidably arranged in the second sliding groove (203), wherein the first sealing plate (102) and the second sealing plate (202) are connected to an elastic module arranged on the outside of the detection box.

5. The forming detection device of a fast recovery diode according to claim 4, characterized in that: The main elastic module comprises a guide rod (8) fixedly arranged on the outer wall of the detection box, an L-shaped support (801) fixed to the sealing plate is slidably sleeved on the guide rod (8), and a first spring (802) is provided on the guide rod (8).

6. The forming detection device of a fast recovery diode according to claim 3, characterized in that: The main positioning module comprises a positioning groove (303) provided on the detection platform (301), a bearing platform (305) for bearing a fast recovery diode is slidably embedded in the positioning groove (303), a first reserved groove (306) for embedding a main structure (6) is provided on the bearing platform (305), and a second reserved groove (307) for embedding an anode plate (602) and a cathode plate (601) is also provided on the bearing platform (305).

7. The forming detection device of a fast recovery diode according to claim 3, characterized in that: The main transfer module comprises a translation mechanism (302) fixed to the bottom of the detection box, and a driving end of the translation mechanism (302) is fixed to one side of the detection platform (301).

8. The forming detection device of a fast recovery diode according to claim 6, characterized in that: A loading platform (4) is also arranged on one side of the main normal temperature detection area (3), a driving mechanism (401) is fixedly arranged on the loading platform (4), a driving end of the driving mechanism (401) and a driving plate (9), a U-shaped plate (901) is fixedly arranged on one side of the driving plate (9), and a push plate (308) is fixedly arranged on one side of the bottom of the carrying platform (305); The bottom of the main positioning groove (303) is provided with a guide groove (304) for embedding the push plate (308).

9. The forming detection device of a fast recovery diode according to claim 6, characterized in that: The main first reserved groove (306) is a through groove with both ends connected, a bearing plate (7) is slidably embedded in the first reserved groove (306), a support rod (701) is fixedly arranged at the bottom of the bearing plate (7), a guide wheel (702) is rotatably arranged at the bottom of the support rod (701), a limiting rod (704) is fixedly arranged at the bottom of the bearing platform (305), an L-shaped supporting plate (703) fixed to the bearing plate (7) is slidably sleeved on the limiting rod (704), and a second spring (705) is provided on the limiting rod (704); Wherein, a wedge-shaped plate (402) is fixedly arranged on the main loading platform (4), and an inclined guide surface (403) is provided on a side of the wedge-shaped plate (402) facing the normal temperature detection area (3).

10. The fast recovery diode forming detection device according to claim 2, characterized in that: The main detection module comprises a lifting cylinder (501) respectively arranged on the normal temperature detection area (3), the high temperature detection box (1) and the low temperature detection box (2); the lifting cylinder (501) is fixed on the limit frame (503); the driving end of the lifting cylinder (501) is fixed to the lifting plate (502); two groups of guide seats (507) are fixedly arranged on one side of the lifting plate (502); electrical detection sheets (506) corresponding to the anode sheet (602) and the cathode sheet (601) are respectively fixedly arranged on the bottom of the guide seat (507); the electrical detection sheet (506) is connected to the electrical detector (504) fixedly arranged on the lifting plate (502) through a line (505).

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