CMOS detector damage system based on time domain composite pulse laser

Abstract

The invention belongs to the technical field of photoelectric countermeasure, and particularly relates to a CMOS detector damage system based on time-domain composite pulse laser, which comprises a time-domain composite pulse laser generation module, a light beam transmission and focusing module, a target damage monitoring module, a parameter optimization control module and a detector to be damaged. The time domain composite pulse laser generating module comprises a short pulse laser, a long pulse laser, a pulse synchronous controller, a power adjusting unit, a power supply module and a cooling device, and the power adjusting unit is electrically connected with the short pulse laser and the long pulse laser; and the power supply module is electrically connected with the long pulse laser, the short pulse laser and the cooling device. According to the method, energy loss generated by plasmas in a traditional laser damage method is avoided, the damage efficiency is remarkably improved, efficient transmission and concentration of energy in the multilayer structure are achieved through the synergistic effect of long pulses and short pulses, all layers of materials synchronously lose efficacy in a short time, and the damage consistency of the whole multilayer structure is ensured.

Description

Technical Field

[0001] The present invention relates to the technical field of optoelectronic countermeasures, and particularly to a CMOS detector damage system based on time-domain composite pulse laser. Background Art

[0002] Traditional laser damage methods mainly use single-pulse lasers (such as continuous wave or single millisecond, nanosecond, picosecond pulses). Although they can damage CMOS detectors to a certain extent, it is often difficult to achieve precise damage to their multi-layer structures.

[0003] However, traditional laser damage techniques have certain drawbacks. Continuous lasers irradiate continuously, and the continuous laser can gradually increase the temperature of the material, resulting in thermal expansion, melting, and mechanical stress accumulation. As the irradiation time increases, the surface material of the detector may undergo structural damage. However, due to the thermal effect of the continuous laser depending on a long time accumulation, its damage process is relatively slow, and it is difficult to completely damage the CMOS detector in a short time. Single-pulse laser: The single-pulse laser utilizes the high energy released in an extremely short time, which can instantaneously generate intense thermal effects and mechanical stress, resulting in rapid physical changes on the material surface, such as melting, evaporation, or crack formation. Although the instantaneous power of the single-pulse laser is relatively high and can cause significant surface damage to the detector in a short time, due to its short energy transfer time, it often only affects the surface structure of the detector and is difficult to penetrate and damage its multi-layer internal structure.

[0004] It is difficult to balance thermal and non-thermal effects: The thermal effect of long-pulse (ms-level) lasers is more significant and is suitable for ablating large-area materials; while the non-thermal effect of short-pulse (ns-level, ps-level) lasers can achieve high-precision damage in a small area, and it is difficult for a single-mode laser to balance the two.

[0005] With the continuous development of CMOS detectors, more complex structural designs are adopted to enable them to work stably in different environments and effectively resist a certain degree of laser interference and damage. A typical CMOS detector consists of a microlens layer, a photodiode layer, an electrode layer, and a substrate layer. These layers each perform specific functions, there are complex correlations between the layers, and efficient photoelectric conversion and signal transmission are achieved through mutual cooperation. However, this complex structure also increases the difficulty of laser damage, especially in the case where it is necessary to quickly and efficiently damage the detector, and traditional laser technologies seem inadequate.

[0006] In recent years, in response to the above problems, some studies based on composite pulsed lasers have emerged, attempting to combine long-pulse and short-pulse lasers, and exploring more efficient damage methods through means such as timing compounding and energy distribution regulation. However, most of these methods remain in the theoretical research stage and have not yet formed a mature technical system. Especially in the practical application of the multi-layer structure of CMOS detectors, there is no specific and operable process flow and method design. Therefore, we propose a CMOS detector damage system based on time-domain composite pulsed lasers to solve the above problems. Summary of the Invention

[0007] (I) Technical Problems to be Solved

[0008] In view of the deficiencies of the prior art, the present invention provides a CMOS detector damage system based on time-domain composite pulsed lasers, which solves the problems raised in the above background technology.

[0009] (II) Technical Solutions

[0010] The present invention specifically adopts the following technical solutions to achieve the above objectives:

[0011] A CMOS detector damage system based on time-domain composite pulsed lasers includes a time-domain composite pulsed laser generation module, a beam transmission and focusing module, a target damage monitoring module, a parameter optimization control module, and a detector to be damaged;

[0012] The time-domain composite pulsed laser generation module includes a short-pulse laser, a long-pulse laser, a pulse synchronization controller, a power adjustment unit, a power supply module, and a cooling device. The power adjustment unit is electrically connected to the short-pulse laser and the long-pulse laser. The power supply module is electrically connected to the long-pulse laser, the short-pulse laser, and the cooling device. The pulse synchronization controller is electrically connected to the long-pulse laser and the short-pulse laser;

[0013] The beam transmission and focusing module is located in front of the time-domain composite pulsed laser generation module and is in the same optical path. The beam transmission and focusing module includes a collimating mirror, a focusing lens, a beam shaper, and a reflecting mirror arranged in sequence from left to right. The collimating mirror is arranged near the output port of the time-domain composite pulsed laser generation module;

[0014] The target damage monitoring module is located in front of the beam transmission and focusing module. The target damage monitoring module includes a high-speed camera, an optical sensor, an infrared thermal imager, a power detector, and a data acquisition unit. The high-speed camera, the optical sensor, the infrared thermal imager, and the power detector are all electrically connected to the data acquisition unit;

[0015] The parameter optimization control module is electrically connected to the data acquisition unit and the time-domain composite pulse laser generation module. The parameter optimization control module includes a controller unit, a data processing unit, and a feedback control unit. The controller unit and the feedback control unit are both electrically connected to the data processing unit, and the feedback control unit is electrically connected to the pulse synchronization controller.

[0016] Further, the short-pulse laser is a solid-state laser or a fiber laser with a pulse width of 20 ns to 200 ns and a wavelength of 1064 nm or 532 nm; the long-pulse laser is a ytterbium-doped fiber laser or a semiconductor laser with a pulse width of 0.1 ms to 10 ms and a wavelength of 1064 nm or 532 nm; the pulse synchronization controller uses a synchronization control chip with a time control accuracy better than 1 ns.

[0017] Further, the power adjustment unit realizes the adjustable laser power in the range of 0.1 W to 10 W through electronic modulation or a mechanical attenuator; the cooling device is a water-cooled or thermoelectric refrigeration module, supporting independent cooling of the short-pulse laser and the long-pulse laser.

[0018] Further, the material of the collimating mirror is quartz glass; the focusing lens is a composite aspherical lens with a focal length range of 50 mm to 500 mm, supporting dynamic focusing; the beam shaper uses a DOE or a microlens array to adjust the spot shape into a circle, a square, or a ring; the mirror is a high-reflection coated mirror, used to reduce light loss and support multi-axis adjustment.

[0019] Further, the frame rate of the high-speed camera is 1000 fps to 10000 fps, used to record the dynamic images of the process of the laser acting on the detector to be damaged; the response wavelength range of the optical sensor is 300 nm to 1100 nm, supporting multi-channel optical signal acquisition; the resolution of the infrared thermal imager is 640×480 pixels, and the temperature measurement range is -40°C to 1200°C, supporting real-time analysis of thermal images; the measurement range of the power detector is 1 mW to 10 W, and the accuracy is better than ±1%.

[0020] Further, the data acquisition unit uses a USB3.0 or gigabit Ethernet interface to ensure that the data transmission rate is higher than 5 Gbps; the controller unit is a DSP or an FPGA, supporting parallel processing and real-time laser parameter adjustment; the data processing unit uses a multi-core CPU architecture, supporting a data analysis rate greater than 1 GB / s; the feedback control unit realizes real-time adjustment of the laser power, pulse width, and frequency through closed-loop control.

[0021] (III) Beneficial effects

[0022] Compared with the prior art, the present invention provides a CMOS detector damage system based on time-domain composite pulsed laser, having the following beneficial effects:

[0023] Through the combination of different time-domain pulsed lasers, the present invention realizes precise and efficient damage to the multi-layer structure of the CMOS detector. The long pulse provides a stable heat accumulation effect, enabling the material to reach the critical damage state. The short pulse directly destroys the microstructure of the material with high energy density, avoiding the energy loss caused by plasma generation in traditional laser damage methods, thereby significantly improving the damage efficiency. The synergistic effect of the long and short pulses realizes the efficient transfer and concentration of energy in the multi-layer structure, causing each layer of material to fail synchronously in a short time and ensuring the overall damage consistency of the multi-layer structure. By precisely controlling the pulse parameters and timing relationship, this method improves the controllability and efficiency of damage, is particularly suitable for the special multi-layer materials of CMOS detectors, and has wide practical value. Description of the Drawings

[0024] Figure 1 Schematic diagram of the overall structure of the present invention;

[0025] Figure 2 Schematic diagram of the structure of the CMOS detector of the present invention;

[0026] Figure 3 Schematic diagram of the microscopic changes of the CMOS detector under the action of the laser of the present invention;

[0027] Figure 4 Schematic diagram of the time-domain composite pulsed laser timing of the present invention.

[0028] In the figure: 1. Time-domain composite pulsed laser generation module; 2. Short-pulse laser; 3. Long-pulse laser; 4. Pulse synchronization controller; 5. Power supply module; 6. Cooling device; 7. Power adjustment unit; 8. Beam transmission and focusing module; 9. Collimating mirror; 10. Focusing lens; 11. Beam shaper; 12. Reflecting mirror; 13. Target damage monitoring module; 14. High-speed camera; 15. Optical sensor; 16. Infrared thermal imager; 17. Power detector; 18. Data acquisition unit; 19. Detector to be damaged; 20. Parameter optimization control module; 21. Controller unit; 22. Data processing unit; 23. Feedback control unit; 24. Microlens layer; 25. Photodiode layer; 26. Electrode layer; 27. Substrate layer. Detailed Embodiments

[0029] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0030] Embodiment

[0031] As Figures 1-4 shown, a CMOS detector damage system based on time-domain composite pulsed laser proposed in an embodiment of the present invention includes a time-domain composite pulsed laser generation module 1, a beam transmission and focusing module 8, a target damage monitoring module 13, a parameter optimization control module 20, and a detector 19 to be damaged;

[0032] The time-domain composite pulsed laser generation module 1 includes a short pulsed laser 2, a long pulsed laser 3, a pulse synchronization controller 4, a power adjustment unit 7, a power supply module 5, and a cooling device 6. The power adjustment unit 7 is electrically connected to the short pulsed laser 2 and the long pulsed laser 3 to adjust the power of the laser output. The power supply module 5 is electrically connected to the long pulsed laser 3, the short pulsed laser 2, and the cooling device 6 to supply power to them. The pulse synchronization controller 4 is electrically connected to the long pulsed laser 3 and the short pulsed laser 2 to synchronously control the output short and long pulsed lasers;

[0033] The beam transmission and focusing module 8 is located in front of the time-domain composite pulsed laser generation module 1 and is in the same optical path. The beam transmission and focusing module 8 includes a collimating mirror 9, a focusing lens 10, a beam shaper 11, and a mirror 12 arranged in sequence from left to right. The collimating mirror 9 is arranged near the output port of the time-domain composite pulsed laser generation module 1;

[0034] The target damage monitoring module 13 is located in front of the beam transmission and focusing module 8. The target damage monitoring module 13 includes a high-speed camera 14, an optical sensor 15, an infrared thermal imager 16, a power detector 17, and a data acquisition unit 18. The high-speed camera 14, the optical sensor 15, the infrared thermal imager 16, and the power detector 17 are all electrically connected to the data acquisition unit 18;

[0035] The parameter optimization control module 20 is electrically connected to the data acquisition unit 18 and the time-domain composite pulsed laser generation module 1. The parameter optimization control module 20 includes a controller unit 21, a data processing unit 22, and a feedback control unit 23. The controller unit 21 and the feedback control unit 23 are both electrically connected to the data processing unit 22. The feedback control unit 23 is electrically connected to the pulse synchronization controller 4 to change the laser parameters.

[0036] The to-be-damaged detector 19 is located directly in front of the output end of the beam transmission and focusing module 8, and the surface of the to-be-damaged detector 19 coincides with the focal position of the laser beam. The to-be-damaged detector 19 is a CMOS detector with a structure of a microlens layer 24, a photodiode layer 25, an electrode layer 26, and a substrate layer 27.

[0037] In this embodiment, the short-pulse laser 2 is a solid-state laser or a fiber laser with a pulse width of 20 ns to 200 ns, and the wavelength is 1064 nm or 532 nm; the long-pulse laser 3 is a ytterbium-doped fiber laser or a semiconductor laser with a pulse width of 0.1 ms to 10 ms, and the wavelength is 1064 nm or 532 nm; the pulse synchronization controller 4 uses a synchronization control chip with a time control accuracy better than 1 ns.

[0038] In this embodiment, the power adjustment unit 7 realizes adjustable laser power in the range of 0.1 W to 10 W through electronic modulation or a mechanical attenuator; the cooling device 6 is a water-cooling or thermoelectric refrigeration module, supporting independent cooling of the short-pulse laser 2 and the long-pulse laser 3.

[0039] In this embodiment, the material of the collimating mirror 9 is quartz glass; the focusing lens 10 is a composite aspherical lens with a focal length range of 50 mm to 500 mm, supporting dynamic focusing; the beam shaper 11 uses a DOE or a microlens array to adjust the spot shape to be circular, square, or annular; the mirror 12 is a high-reflection coated mirror, used to reduce light loss and support multi-axis adjustment.

[0040] In this embodiment, the frame rate of the high-speed camera 14 is 1000 fps to 10000 fps, used to record the dynamic images of the process of the laser acting on the to-be-damaged detector 19; the response wavelength range of the optical sensor 15 is 300 nm to 1100 nm, supporting multi-channel optical signal acquisition; the resolution of the infrared thermal imager 16 is 640×480 pixels, and the temperature measurement range is -40°C to 1200°C, supporting real-time analysis of thermal images; the measurement range of the power detector 17 is 1 mW to 10 W, and the accuracy is better than ±1%.

[0041] In this embodiment, the data acquisition unit 18 uses a USB3.0 or gigabit Ethernet interface to ensure that the data transmission rate is higher than 5 Gbps; the controller unit 21 is a DSP or an FPGA, supporting parallel processing and real-time laser parameter adjustment; the data processing unit 22 uses a multi-core CPU architecture, supporting a data analysis rate greater than 1 GB / s; the feedback control unit 23 realizes real-time adjustment of the laser power, pulse width, and frequency through closed-loop control.

[0042] The working principle and usage process of the present invention: The time-domain composite pulse laser generation module 1 starts first, sequentially activating the short-pulse laser 2 and the long-pulse laser 3. The short-pulse laser 2 emits nanosecond-level high-energy laser pulses, whose pulse width and interval are adjustable. The laser energy density is set through the precise power adjustment unit 7 to ensure that it produces an instantaneous damage effect within an extremely short time, damaging the microstructure on the surface of the detector 19 to be damaged. The long-pulse laser 3 emits millisecond-level laser pulses, and this pulse length and energy setting are used to form a heat accumulation effect on the detector surface, heating the deep structure to the thermal damage threshold. Through the precise pulse synchronization controller 4, the trigger time and interval of the short-pulse and long-pulse lasers are optimized, enabling the two to act synergistically on different time scales to form precise damage to the CMOS detector.

[0043] The laser beam is regulated by the beam transmission and focusing module 8. First, the collimating mirror 9 converts the short-pulse and long-pulse lasers into parallel beams, improving the transmission collimation and accuracy of the beam. Subsequently, the focusing lens 10 focuses the parallel laser beam onto a specific area on the surface of the detector 19 to be damaged, adjusting the focus size to achieve the damage effect on different layers of materials. The beam shaper 11 further adjusts the shape and energy distribution of the laser beam to ensure that the laser can adapt to the different damage requirements of each layer of material, ensuring a balanced damage effect from the surface layer to the deep layer.

[0044] The parameter optimization control module 20 precisely adjusts the key parameters of the laser pulse through real-time feedback signals to optimize the damage effect. The controller unit 21 adjusts the energy, pulse width, and time delay of the short-pulse and long-pulse lasers according to the preset program and feedback information, enabling the laser to precisely act on different layers of the detector 19 to be damaged, forming an efficient synergistic damage. The data processing unit 22 receives the image data, optical property changes, and temperature distribution during the damage process, generates optimized parameters based on these data, and adjusts the output of the laser in real time through the feedback control unit 23 to ensure the damage accuracy at each stage.

[0045] During the damage process, the target damage monitoring module 13 continuously monitors and records the damage process. The high-speed camera 14 records the dynamic changes and morphological features on the surface of the detector 19 to be damaged, capturing the immediate impact of each laser pulse on the surface layer and deep-layer materials. The optical sensor 15 monitors the interaction between the laser and the material to be damaged, recording the changes in light scattering and absorption. The infrared thermal imager 16 tracks the surface temperature distribution, capturing the process of heat accumulation and diffusion. The power detector 17 ensures a stable output of the laser power, and the data acquisition unit 18 transmits the monitored data to the parameter optimization control module 20 through a high-speed communication interface for analysis and adjustment.

[0046] The time-domain laser is further optimized to ensure the maximization of the damage effect on the multi-layer structure of the CMOS detector. The short-pulse laser acts on the photodiode layer 25 and the deep electrode layer 26 of the detector through high energy density, destroying the lattice structure of the material in a short time; while the long-pulse laser acts on deeper structures by increasing the temperature of the material through the thermal accumulation effect. The parameter optimization control module 20 adjusts the frequency, interval of the short pulse and the energy output of the long pulse according to the thermal effects and physical properties of different materials, so that the two cooperate to achieve the optimal damage effect.

[0047] Through multiple rounds of laser action, the surface layer material is gradually peeled off, and the electrode layer 26 and the base layer 27 are damaged, ultimately resulting in the structural failure of the CMOS detector. The high energy density of the nanosecond pulsed laser gradually damages the surface microlens layer 24 and the middle-layer photodiode layer 25 materials, and the millisecond pulse accelerates the structural failure of the middle and bottom layers through the thermal effect. Finally, the target damage monitoring module 13 confirms that the depth and coverage of the damaged area reach the expected standards.

[0048] The present invention realizes efficient and precise multi-layer damage to the microlens layer 24, photodiode layer 25, electrode layer 26 and base layer 27 of the CMOS detector through the combination of wide pulses and narrow pulses and the composite strategy of different time sequences.

[0049] The long-pulse laser 3 outputs ms-level laser with adjustable pulse width, and the single-pulse energy range is 0 - 1J, which is used to heat and pre-treat the target surface; the short-pulse laser 2 outputs ns-level laser with a pulse width of 20ns, and the single-pulse energy range is 0 - 500mJ, which is suitable for transient energy deposition and local damage.

[0050] The triggering time and combination form of the long pulse and the short pulse are as Figure 4 shown, including the following typical time-domain composite schemes:

[0051] Ⅰ. The long pulse is triggered before the short pulse: The long pulse is used to heat and soften the target layer structure, and the short pulse is triggered after the long pulse ends to perform local damage with high peak power on the material;

[0052] Ⅱ. The long pulse and the short pulse partially overlap: The short pulse is triggered while the long pulse is heating, and high-efficiency energy deposition is achieved by using the low damage threshold of the material in the thermally excited state;

[0053] Ⅲ. The short pulse completely wraps the long pulse: The short pulse sandwiches the long pulse before and after, which is suitable for performing composite damage on the material and increasing the uniformity of surface and internal damage;

[0054] Ⅳ. The long pulse completely wraps the short pulse: The long pulse forms an overall preheating area, and the short pulse is concentrated in the middle period for precise damage;

[0055] Ⅴ. Short pulse triggers before long pulse: The short pulse is used to form an initial micro-damage structure on the material surface, and then the long pulse triggers heat diffusion to deepen the damage depth.

[0056] The output of the time-domain composite pulse laser generation module 1 undergoes beam collimation, focusing, and shaping through the beam transmission and focusing module 8. The collimating mirror 9 converts the laser beam into parallel light, the focusing lens 10 focuses the beam onto the target area of the CMOS detector, and the beam shaper 11 adjusts the spot shape according to requirements and enables the spot diameter to be adjustable within the range of 0.5 - 5 mm.

[0057] The long pulse laser causes the microlens layer 24 to soften and deform through thermal effects, forming surface thermal damage with a depth controlled within 5 - 10 μm; the short pulse laser acts between the photodiode layer 25 and the electrode layer 26 to generate internal gasification and microcracks through transient high power; the substrate layer 27 forms through-penetrating damage under the dual action of heat diffusion and local blasting.

[0058] According to different selections of the composite strategy, the laser parameters can be flexibly adjusted. The following is a typical setting:

[0059] Long pulse laser: Pulse length 0.5 ms, single pulse energy 0.7 J, trigger delay 0 μs; Short pulse laser: Single pulse length 20 ns, pulse interval 100 ns, number of pulses 3, single pulse energy 300 mJ; Composite strategy of long and short pulses: The long pulse has been continuously working for 250 μs when the short pulse starts and overlaps with the long pulse.

[0060] The target damage monitoring module 13 monitors the damage process of the CMOS detector in real time through the high-speed camera 14, optical sensor 15, infrared thermal imager 16, and power detector 17. The data acquisition unit 18 transmits the signal to the data processing unit 22 through a high-speed sampling card, and the data processing unit 22 analyzes the feedback data based on the algorithm and dynamically adjusts the laser parameters. Through the optimization of different time-domain composite strategies, the present invention realizes the depth-controlled damage of the multi-layer structure of the CMOS detector.

[0061] Finally, it should be noted that the above are only the preferred embodiments of the present invention and are not used to limit the present invention. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements for some of the technical features. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A CMOS detector damage system based on time-domain composite pulse laser, characterized in that: It includes a time-domain composite pulse laser generation module (1), a beam transmission and focusing module (8), a target damage monitoring module (13), a parameter optimization control module (20), and a detector to be damaged (19). The time-domain composite pulse laser generation module (1) includes a short-pulse laser (2), a long-pulse laser (3), a pulse synchronization controller (4), a power adjustment unit (7), a power supply module (5), and a cooling device (6). The power adjustment unit (7) is electrically connected to the short-pulse laser (2) and the long-pulse laser (3). The power supply module (5) is electrically connected to the long-pulse laser (3), the short-pulse laser (2), and the cooling device (6). The pulse synchronization controller (4) is electrically connected to the long-pulse laser (3) and the short-pulse laser (2). The beam transmission and focusing module (8) is located in front of the time-domain composite pulse laser generation module (1) and is in the same optical path. The beam transmission and focusing module (8) includes a collimating mirror (9), a focusing lens (10), a beam shaper (11), and a reflecting mirror (12) arranged in sequence from left to right. The collimating mirror (9) is arranged near the output port of the time-domain composite pulse laser generation module (1). The target damage monitoring module (13) is located in front of the beam transmission and focusing module (8). The target damage monitoring module (13) includes a high-speed camera (14), an optical sensor (15), an infrared thermal imager (16), a power detector (17), and a data acquisition unit (18). The high-speed camera (14), the optical sensor (15), the infrared thermal imager (16), and the power detector (17) are all electrically connected to the data acquisition unit (18). The parameter optimization control module (20) is electrically connected to the data acquisition unit (18) and the time-domain composite pulse laser generation module (1). The parameter optimization control module (20) includes a controller unit (21), a data processing unit (22), and a feedback control unit (23). The controller unit (21) and the feedback control unit (23) are both electrically connected to the data processing unit (22). The feedback control unit (23) is electrically connected to the pulse synchronization controller (4).

2. The CMOS detector damage system based on time-domain composite pulse laser according to claim 1, characterized in that: The short-pulse laser (2) is a solid-state laser or a fiber laser with a pulse width of 20 ns to 200 ns and a wavelength of 1064 nm or 532 nm. The long-pulse laser (3) is a ytterbium-doped fiber laser or a semiconductor laser with a pulse width of 0.1 ms to 10 ms and a wavelength of 1064 nm or 532 nm. The pulse synchronization controller (4) uses a synchronization control chip with a time control accuracy better than 1 ns.

3. The CMOS detector damage system based on time-domain composite pulse laser according to claim 1, characterized in that: The power adjustment unit (7) realizes adjustable laser power in the range of 0.1 W to 10 W through electronic modulation or a mechanical attenuator. The cooling device (6) is a water-cooling or thermoelectric refrigeration module, supporting independent cooling of the short-pulse laser (2) and the long-pulse laser (3).

4. The CMOS detector damage system based on time-domain composite pulse laser according to claim 1, characterized in that: The material of the collimating mirror (9) is fused silica; the focusing lens (10) is a compound aspherical lens with a focal length range of 50 mm to 500 mm, supporting dynamic focusing; the beam shaper (11) uses a DOE or a microlens array to adjust the spot shape to be circular, square or annular; the mirror (12) is a highly reflective coated mirror, which is used to reduce optical loss and support multi-axis adjustment.

5. The CMOS detector damage system based on time-domain composite pulse laser according to claim 1, characterized in that: The frame rate of the high-speed camera (14) is 1000 fps to 10000 fps, which is used to record the dynamic images of the process of the laser acting on the detector to be damaged (19); the response wavelength range of the optical sensor (15) is 300 nm to 1100 nm, supporting multi-channel optical signal acquisition; the resolution of the infrared thermal imager (16) is 640×480 pixels, the temperature measurement range is -40°C to 1200°C, supporting real-time analysis of thermal images; the measurement range of the power detector (17) is 1 mW to 10 W, and the accuracy is better than ±1%.

6. The CMOS detector damage system based on time-domain composite pulse laser according to claim 1, characterized in that: The data acquisition unit (18) uses a USB3.0 or gigabit Ethernet interface to ensure that the data transmission rate is higher than 5 Gbps; the controller unit (21) is a DSP or FPGA, supporting parallel processing and real-time laser parameter adjustment; the data processing unit (22) uses a multi-core CPU architecture, supporting a data analysis rate greater than 1 GB / s; the feedback control unit (23) realizes real-time adjustment of laser power, pulse width and frequency through closed-loop control.

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