Wafer heating temperature sensing device and detection method

Abstract

The invention discloses a wafer heating temperature sensing device and a detection method, and the method comprises the steps: coating a threaded end of a temperature sensor with high-temperature heat-conducting lubricating grease, carrying out the high-pressure washing of a threaded tooth tip end of a wafer heating block and a micro-texture gap of an inter-tooth recessed part, and enabling the micro-gap to be filled with the high-temperature heat-conducting lubricating grease, so as to enable the distribution density of the high-temperature heat-conducting lubricating grease to be uniform; gradient thermal compensation radiation heating is adopted, and wafer edge heat loss is dynamically compensated; compensating the temperature fluctuation of the wafer edge area and the wafer center area; the embedded scanning combination detection subsystem scans the surface of the wafer through an infrared thermal imager array and forms a temperature detection combination in combination with an embedded temperature sensor, so that the temperature detection precision and the temperature difference resolution are improved; according to a large amount of wafer heating detection data, through big data statistical analysis, a wafer heating temperature rise process and a wafer heat dissipation process are controlled, temperature difference overshoot in the wafer heating process is balanced, and cooling and heat dissipation uniformity is kept; the fluctuation trend of the surface temperature and the internal temperature of the wafer is predicted, and temperature abnormity is warned in advance.

Description

Technical Field

[0001] The present invention relates to the technical field of intelligent manufacturing control for precise detection and sensing of wafers. More specifically, the present invention relates to a wafer heating temperature sensing device and a detection method. Background Art

[0002] Currently, the temperature detection of high-precision wafer heating devices usually still uses a single sensor to detect the local temperature of the heating part; how to keep the threaded end of the temperature sensor in more precise contact with the threads of the wafer heating block and reduce the micro-gaps and micro-textures' influence on heat transfer, how to compensate for the heat dissipation at the wafer edge, how to reduce the temperature fluctuations in the wafer edge area and the wafer center area, how to accurately detect the temperature of each point on the wafer surface and improve the temperature detection accuracy and temperature difference resolution through temperature detection combination, how to analyze and control the balance and stability of the wafer heating and temperature dissipation processes, the large temperature difference fluctuations caused by the overshoot of the temperature difference during the wafer heating process, how to maintain the uniformity of cooling and heat dissipation, how to master the temperature fluctuations of the wafer surface and internal temperature and give early warnings of temperature abnormalities, etc. These problems remain to be solved; therefore, it is necessary to propose a wafer heating temperature sensing device and a detection method to at least partially solve the problems existing in the prior art. Summary of the Invention

[0003] A series of simplified concepts are introduced in the Summary of the Invention section, which will be further elaborated in the Detailed Description section; the Summary of the Invention section of the present invention does not mean to attempt to define the key features and essential technical features of the claimed technical solution, nor does it mean to attempt to determine the protection scope of the claimed technical solution.

[0004] To at least partially solve the above problems, the present invention provides a wafer heating temperature sensing device, including:

[0005] A micro-texture uniform filling subsystem, applying high-temperature thermal conductive grease to the threaded end of the temperature sensor, and high-pressure flushing the micro-texture gaps at the tips and between the teeth of the threads of the wafer heating block, so that the micro-voids are filled with the high-temperature thermal conductive grease, and the distribution density of the high-temperature thermal conductive grease is uniform;

[0006] A dynamic thermal compensation radiation heating subsystem, using gradient thermal compensation radiation heating to dynamically compensate for the heat dissipation at the wafer edge; through dynamic compensation of temperature fluctuations, compensating for the temperature fluctuations in the wafer edge area and the wafer center area;

[0007] An embedded scanning combination detection subsystem, scanning the wafer surface through an infrared thermal imager array, and combining with an embedded temperature sensor to form a temperature detection combination, enhancing the temperature detection accuracy and temperature difference resolution;

[0008] The data analysis, prediction and early warning sub-system controls the heating and cooling processes of the wafer based on a large amount of wafer heating detection data through big data statistical analysis, balances the temperature overshoot during the wafer heating process, and maintains the uniformity of cooling and heat dissipation. It predicts the temperature fluctuations on the wafer surface and inside the wafer and gives early warnings of abnormal temperatures.

[0009] Preferably, the micro-texture uniform filling sub-system includes:

[0010] The high-temperature heat conduction mechanism applies high-temperature heat-conducting grease to the threaded end of the temperature sensor, and conducts high-pressure flushing of the thread teeth and the inter-thread recesses of the threaded hole of the heating block with high-temperature heat-conducting grease. It conducts high-pressure flushing of the micro-texture gaps at the tips of the thread teeth and the inter-thread recesses of the wafer heating block, and fills the micro-texture gaps in the inter-thread recesses and the micro-texture gaps on the surface of the thread teeth. The threaded end of the temperature sensor is screwed into tight contact with the threaded hole of the wafer heating block, and the micro-gaps are filled with high-temperature heat-conducting grease, improving the heat conduction during the detection process between the heating block and the temperature sensor.

[0011] The heat conduction extension distribution mechanism sets a heat conduction extension structure at the bottom of the threaded hole, and the surplus high-temperature heat-conducting grease is squeezed into the heat conduction extension holes of the heat conduction extension structure, making the distribution density of the high-temperature heat-conducting grease uniform.

[0012] Preferably, the dynamic thermal compensation radiation heating sub-system includes:

[0013] The gradient compensation radiation heating mechanism uses gradient thermal compensation radiation heating to dynamically compensate for the heat loss at the wafer edge, compensate for the heating edge effect, and compensate and balance the minute temperature difference between the heated surface of the wafer and the surface to be processed of the wafer.

[0014] The temperature fluctuation dynamic compensation mechanism compensates for the temperature fluctuations in the wafer edge area and the wafer center area through temperature fluctuation dynamic compensation. It respectively detects the temperature in the wafer edge area and the wafer center area. When the temperature fluctuation in the wafer edge area or the wafer center area exceeds the set temperature fluctuation range, thermal compensation radiation heating for the wafer temperature fluctuation is carried out to compensate for the temperature fluctuations in the wafer edge area and the wafer center area.

[0015] Preferably, the embedded scanning combination detection sub-system includes:

[0016] The infrared thermal imaging array detection mechanism sets an array of infrared thermal imagers corresponding to the wafer surface. Through the array of infrared thermal imagers, it scans the wafer surface from the center of the wafer surface and the edge of the wafer surface along a spiral curve in opposite directions to conduct infrared detection and over-temperature warning of the wafer surface temperature.

[0017] The internal temperature sensing detection mechanism sets an embedded temperature sensor in the heating block. The array of infrared thermal imagers combined with the embedded temperature sensor forms a temperature detection combination, improving the temperature detection accuracy and temperature difference resolution.

[0018] Preferably, the data analysis, prediction and early warning sub-system includes:

[0019] The heating detection data analysis center searches for the historical experience data of wafer heating based on a large amount of wafer heating detection data, obtains the big data analysis information of wafer heating through big data statistical analysis, controls the heating and temperature rising process of the wafer, balances the temperature difference overshoot in the wafer heating process, and controls the wafer cooling and heat dissipation process to maintain the uniformity of cooling and heat dissipation.

[0020] The temperature anomaly prediction and early warning platform tracks the temperature fluctuation during the wafer heating process, predicts the temperature fluctuation trends on the wafer surface and inside the wafer, and gives an early warning of temperature anomalies.

[0021] The present invention provides a detection method for a wafer heating temperature sensing device, including:

[0022] S01: Apply high-temperature heat-conducting grease to the threaded end of the temperature sensor, and perform high-pressure flushing on the threaded tip and the micro-texture gaps in the inter-tooth depressions of the wafer heating block thread. The microvoids are filled with the high-temperature heat-conducting grease to make the distribution density of the high-temperature heat-conducting grease uniform.

[0023] S02: Adopt gradient heat compensation radiation heating to dynamically compensate for the heat loss at the wafer edge; through dynamic compensation of temperature fluctuations, compensate for the temperature fluctuations in the wafer edge region and the wafer center region.

[0024] S03: Scan the wafer surface with an infrared thermal imager array, and combine it with an embedded temperature sensor to form a temperature detection combination, improving the temperature detection accuracy and temperature difference resolution.

[0025] S04: Based on a large amount of wafer heating detection data, through big data statistical analysis, control the wafer heating and temperature rising process and the heat dissipation process, balance the temperature difference overshoot in the wafer heating process, and maintain the uniformity of cooling and heat dissipation; predict the temperature fluctuation trends on the wafer surface and inside the wafer, and give an early warning of temperature anomalies.

[0026] Preferably, S01 includes:

[0027] S011: Apply high-temperature heat-conducting grease to the threaded end of the temperature sensor, perform high-pressure flushing of the threaded teeth and the inter-tooth depressions of the heating block threaded hole with the high-temperature heat-conducting grease, perform high-pressure flushing on the threaded tip and the micro-texture gaps in the inter-tooth depressions of the wafer heating block, and fill the micro-texture gaps in the inter-tooth depressions and the micro-texture gaps on the threaded tooth surface; the threaded end of the temperature sensor is screwed tightly in contact with the threaded hole of the wafer heating block, and the microvoids are filled with the high-temperature heat-conducting grease; improve the heat conductivity during the detection process between the heating block and the temperature sensor.

[0028] S012: A heat-conducting extension structure is provided at the bottom of the threaded hole, and the surplus high-temperature heat-conducting grease is squeezed into the heat-conducting extension hole of the heat-conducting extension structure to make the distribution density of the high-temperature heat-conducting grease uniform.

[0029] Preferably, S02 includes:

[0030] S021, which uses gradient thermal compensation radiation heating to dynamically compensate for the heat dissipation at the wafer edge, compensates for the heating edge effect, and compensates and balances the subtle temperature difference between the heated surface of the wafer and the surface to be processed of the wafer;

[0031] S022, which compensates for the temperature fluctuations in the wafer edge region and the wafer center region through dynamic compensation of temperature fluctuations; respectively detects the temperature in the wafer edge region and the temperature in the wafer center region, and when the temperature fluctuation in the wafer edge region or the temperature fluctuation in the wafer center region exceeds the set temperature fluctuation range, performs thermal compensation radiation heating for the temperature fluctuation of the wafer to compensate for the temperature fluctuations in the wafer edge region and the wafer center region.

[0032] Preferably, S03 includes:

[0033] S031, which sets an infrared thermal imager array corresponding to the wafer surface, and through the infrared thermal imager array, scans the wafer surface in a spiral curve from the center of the wafer surface and the edge of the wafer surface respectively to perform infrared detection and over-temperature warning for the wafer surface temperature;

[0034] S032, which sets embedded temperature sensors in the heating block, and the infrared thermal imager array combined with the embedded temperature sensors forms a temperature detection combination to improve the temperature detection accuracy and temperature difference resolution.

[0035] Preferably, S04 includes:

[0036] S041, which searches for the historical experience data of wafer heating according to a large amount of wafer heating detection data, obtains the big data analysis information of wafer heating through big data statistical analysis; controls the wafer heating and temperature rising process, balances the temperature overshoot amount during the wafer heating process; and controls the wafer cooling and heat dissipation process to maintain the uniformity of cooling and heat dissipation;

[0037] S042, which tracks the temperature fluctuation during the wafer heating process, predicts the temperature fluctuation trend of the wafer surface and the internal temperature, and gives an early warning of temperature anomalies.

[0038] Compared with the prior art, the present invention has at least the following beneficial effects:

[0039] The present invention provides a wafer heating temperature sensing device and a detection method. Through a micro-texture uniform filling subsystem, high-temperature thermal conductive grease is applied to the threaded end of the temperature sensor, and the threaded tip and the micro-texture gaps in the inter-tooth recesses of the wafer heating block are flushed under high pressure. The micro voids are filled with the high-temperature thermal conductive grease, making the distribution density of the high-temperature thermal conductive grease uniform; a dynamic thermal compensation radiation heating subsystem, which uses gradient thermal compensation radiation heating to dynamically compensate for the heat dissipation at the wafer edge; through dynamic compensation of temperature fluctuations, compensates for the temperature fluctuations in the wafer edge region and the wafer center region; a buried scanning combination detection subsystem, which scans the wafer surface through an infrared thermal imager array and combines with a buried temperature sensor to form a temperature detection combination, improving the temperature detection accuracy and temperature difference resolution; a data analysis prediction and early warning subsystem, which controls the wafer heating and temperature dissipation processes based on a large amount of wafer heating detection data through big data statistical analysis, balances the temperature difference overshoot during the wafer heating process, and maintains the uniformity of temperature dissipation during cooling; predicts the temperature fluctuation trends on the wafer surface and inside the wafer, and gives an early warning of abnormal temperature in advance; can maintain the sealing of the high-temperature thermal conductive grease and significantly reduce the non-uniform area of the extrusion distribution density of the high-temperature thermal conductive grease; the threaded tip and the micro-texture gaps in the inter-tooth recesses of the wafer heating block are flushed with the high-temperature thermal conductive grease under high pressure, and the micro voids are filled with the high-temperature thermal conductive grease, making the distribution density of the high-temperature thermal conductive grease uniform; applying high-temperature thermal conductive grease to the threaded end of the temperature sensor significantly improves the contact heat conductivity after the threaded end of the temperature sensor is tightened with the threaded hole; using gradient thermal compensation radiation heating to dynamically compensate for the heat dissipation at the wafer edge; significantly reducing the radiation heating edge effect, and through dynamic compensation of temperature fluctuations, compensating for the temperature fluctuations in the wafer edge region and the wafer center region; significantly reducing the temperature fluctuations in the wafer edge region; scanning the wafer surface through an infrared thermal imager array and combining with a buried temperature sensor to form a temperature detection combination, improving the temperature detection accuracy and temperature difference resolution; significantly improving the temperature detection accuracy and temperature difference resolution; controlling the wafer heating and temperature dissipation processes based on a large amount of wafer heating detection data through big data statistical analysis, balancing the temperature difference overshoot during the wafer heating process, and maintaining the uniformity of temperature dissipation during cooling; predicting the temperature fluctuation trends on the wafer surface and inside the wafer, and giving an early warning of abnormal temperature in advance; significantly improving the uniformity of temperature dissipation during cooling; significantly reducing the temperature difference overshoot and the smoothness of the temperature uniformity during the wafer heating process; the present invention has great significance and remarkable effects.

[0040] A wafer heating temperature sensing device and a detection method according to the present invention. Other advantages, objectives, and features of the present invention will be partially reflected by the following description and partially understood by those skilled in the art through the research and practice of the present invention. Description of the Drawings

[0041] The accompanying drawings are used to provide a further understanding of the present invention and form a part of the specification. They are used together with the embodiments of the present invention to explain the present invention and do not constitute a limitation to the present invention. In the accompanying drawings:

[0042] Figure 1 It is a diagram of an embodiment of a wafer heating temperature sensing device according to the present invention.

[0043] Figure 2 It is a diagram of another embodiment of a wafer heating temperature sensing device according to the present invention.

[0044] Figure 3 It is a diagram of an embodiment of the overall wafer heating temperature sensing device and detection method according to the present invention. Detailed implementation manners

[0045] The following further describes the present invention in detail in conjunction with the accompanying drawings and embodiments, so that those skilled in the art can implement it with reference to the specification; as Figures 1 - 3 shown, the present invention provides a wafer heating temperature sensing device, including:

[0046] A micro-texture uniform filling subsystem, applying high-temperature heat-conducting grease to the threaded end of the temperature sensor, and high-pressure flushing the micro-texture gaps at the tips and between the teeth of the threaded teeth of the wafer heating block, and the micro-voids are filled with high-temperature heat-conducting grease to make the distribution density of the high-temperature heat-conducting grease uniform;

[0047] A dynamic thermal compensation radiation heating subsystem, adopting gradient thermal compensation radiation heating to dynamically compensate for the heat dissipation at the wafer edge; through dynamic compensation of temperature fluctuations, compensating for the temperature fluctuations in the wafer edge region and the wafer center region;

[0048] An embedded scanning combination detection subsystem, scanning the wafer surface through an infrared thermal imager array, and combining with an embedded temperature sensor to form a temperature detection combination, improving the temperature detection accuracy and temperature difference resolution;

[0049] A data analysis, prediction and early warning subsystem, based on a large amount of wafer heating detection data, through big data statistical analysis, controlling the wafer heating temperature rise process and the heat dissipation process, balancing the temperature difference overshoot in the wafer heating process, and maintaining the uniformity of heat dissipation during cooling; predicting the temperature fluctuation trends on the wafer surface and inside the wafer, and giving early warnings of abnormal temperatures.

[0050] The principles and effects of the above technical solution are as follows: A wafer heating temperature sensing device includes: a micro-texture uniform filling subsystem 10, applying high-temperature thermal conductive grease to the threaded end of the temperature sensor, and high-pressure flushing the micro-texture gaps at the tips of the threaded teeth and the recesses between the teeth of the wafer heating block, with the micro voids filled with the high-temperature thermal conductive grease to make the distribution density of the high-temperature thermal conductive grease uniform; a dynamic thermal compensation radiation heating subsystem 20, using gradient thermal compensation radiation heating to dynamically compensate for the heat loss at the wafer edge; through dynamic compensation of temperature fluctuations, compensating for the temperature fluctuations in the wafer edge region and the wafer center region; a buried scanning combination detection subsystem 30, scanning the wafer surface through an infrared thermal imager array, and combining with the buried temperature sensor to form a temperature detection combination, enhancing the temperature detection accuracy and temperature difference resolution; a data analysis prediction and early warning subsystem 40, based on a large amount of wafer heating detection data, through big data statistical analysis, controlling the wafer heating temperature rise process and the temperature dissipation process, balancing the temperature difference overshoot in the wafer heating process, and maintaining the uniformity of temperature dissipation during cooling; predicting the temperature fluctuation trends on the wafer surface and inside, and early warning of temperature anomalies in advance; being able to maintain the seal of the high-temperature thermal conductive grease and significantly reducing the non-uniform region of the extrusion distribution density of the high-temperature thermal conductive grease; high-pressure flushing the micro-texture gaps at the tips of the threaded teeth and the recesses between the teeth of the wafer heating block with the high-temperature thermal conductive grease, with the micro voids filled with the high-temperature thermal conductive grease to make the distribution density of the high-temperature thermal conductive grease uniform; applying high-temperature thermal conductive grease to the threaded end of the temperature sensor, and the contact thermal conductivity is significantly improved after the threaded end of the temperature sensor is screwed tightly with the threaded hole; using gradient thermal compensation radiation heating to dynamically compensate for the heat loss at the wafer edge; significantly reducing the edge effect of radiation heating, and through dynamic compensation of temperature fluctuations, compensating for the temperature fluctuations in the wafer edge region and the wafer center region; significantly reducing the temperature fluctuations in the wafer edge region; scanning the wafer surface through an infrared thermal imager array, and combining with the buried temperature sensor to form a temperature detection combination, enhancing the temperature detection accuracy and temperature difference resolution; significantly improving the temperature detection accuracy and temperature difference resolution; based on a large amount of wafer heating detection data, through big data statistical analysis, controlling the wafer heating temperature rise process and the temperature dissipation process, balancing the temperature difference overshoot in the wafer heating process, and maintaining the uniformity of temperature dissipation during cooling; predicting the temperature fluctuation trends on the wafer surface and inside, and early warning of temperature anomalies in advance; significantly improving the uniformity of temperature dissipation during cooling; significantly reducing the temperature difference overshoot and the smoothness of the temperature uniformity during wafer heating; The present invention has great significance and remarkable effects.

[0051] In one embodiment, the micro-texture uniform filling subsystem includes:

[0052] High-temperature heat conduction mechanism. Apply high-temperature heat-conducting grease to the threaded end of the temperature sensor, and conduct high-pressure flushing of the threaded teeth and the recesses between the teeth of the threaded hole of the heating block with the high-temperature heat-conducting grease. High-pressure flush the micro-texture gaps at the tips of the threaded teeth and the recesses between the teeth of the wafer heating block, and fill the micro-texture gaps in the recesses between the teeth and the micro-texture gaps on the surface of the threaded teeth; The threaded end of the temperature sensor is screwed into tight contact with the threaded hole of the wafer heating block, and the micro-gaps are filled with high-temperature heat-conducting grease; Improve the heat conduction during the detection process between the heating block and the temperature sensor;

[0053] Heat conduction extension distribution mechanism. A heat conduction extension structure is provided at the bottom of the threaded hole, and the surplus high-temperature heat-conducting grease is squeezed into the heat conduction extension holes of the heat conduction extension structure, making the distribution density of the high-temperature heat-conducting grease uniform.

[0054] The principle and effect of the above technical solution are as follows: The micro-texture uniform filling subsystem includes: a high-temperature heat conduction mechanism. Apply high-temperature heat-conducting grease to the threaded end of the temperature sensor, and conduct high-pressure flushing of the threaded teeth and the recesses between the teeth of the threaded hole of the heating block with the high-temperature heat-conducting grease. High-pressure flush the micro-texture gaps at the tips of the threaded teeth and the recesses between the teeth of the wafer heating block, and fill the micro-texture gaps in the recesses between the teeth and the micro-texture gaps on the surface of the threaded teeth; The threaded end of the temperature sensor is screwed into tight contact with the threaded hole of the wafer heating block, and the micro-gaps are filled with high-temperature heat-conducting grease; Improve the heat conduction during the detection process between the heating block and the temperature sensor; A heat conduction extension distribution mechanism. A heat conduction extension structure is provided at the bottom of the threaded hole, and the surplus high-temperature heat-conducting grease is squeezed into the heat conduction extension holes 102 of the heat conduction extension structure 101, making the distribution density of the high-temperature heat-conducting grease uniform; The heat conduction extension structure includes: a plurality of groups of heat conduction extension holes are radially arranged with the bottom of the threaded hole as the center. During the process of screwing the threaded end of the temperature sensor into the threaded hole, the surplus high-temperature heat-conducting grease is squeezed into the heat conduction extension holes, making the distribution density of the high-temperature heat-conducting grease uniform; After the threaded end of the temperature sensor is screwed into and tightened with the threaded hole, the threaded hole is closed, keeping the high-temperature heat-conducting grease sealed, and significantly reducing the non-uniform area of the extrusion distribution density of the high-temperature heat-conducting grease; The contact heat conduction after the threaded end of the temperature sensor is screwed into and tightened with the threaded hole is significantly improved.

[0055] In one embodiment, the dynamic thermal compensation radiation heating subsystem includes:

[0056] Gradient compensation radiation heating mechanism. Adopt gradient thermal compensation radiation heating to dynamically compensate for the heat dissipation at the edge of the wafer, compensate for the heating edge effect, and compensate and balance the subtle temperature difference between the heated surface of the wafer and the surface of the wafer to be processed;

[0057] The temperature fluctuation dynamic compensation mechanism compensates for the temperature fluctuations in the wafer edge region and the wafer center region through temperature fluctuation dynamic compensation. It separately detects the temperature in the wafer edge region and the temperature in the wafer center region. When the temperature fluctuation in the wafer edge region or the temperature fluctuation in the wafer center region exceeds the set temperature fluctuation range, wafer temperature fluctuation thermal compensation radiation heating is carried out to compensate for the temperature fluctuations in the wafer edge region and the wafer center region.

[0058] The principle and effect of the above technical solution are as follows: The dynamic thermal compensation radiation heating subsystem includes: a gradient compensation radiation heating mechanism that uses gradient thermal compensation radiation heating to dynamically compensate for the heat loss at the wafer edge, compensate for the heating edge effect, and compensate and balance the subtle temperature difference between the wafer heating surface and the wafer surface to be processed; the temperature fluctuation dynamic compensation mechanism that compensates for the temperature fluctuations in the wafer edge region and the wafer center region through temperature fluctuation dynamic compensation. It separately detects the temperature in the wafer edge region and the temperature in the wafer center region. When the temperature fluctuation in the wafer edge region or the temperature fluctuation in the wafer center region exceeds the set temperature fluctuation range, wafer temperature fluctuation thermal compensation radiation heating is carried out to compensate for the temperature fluctuations in the wafer edge region and the wafer center region. Using gradient thermal compensation radiation heating to dynamically compensate for the heat loss at the wafer edge, compensate for the heating edge effect, and compensate and balance the subtle temperature difference between the wafer heating surface and the wafer surface to be processed includes: taking the wafer heating surface as the starting reference and the wafer surface to be processed as the heating end, calculating the heat conduction attenuation from the wafer heating surface to the wafer surface to be processed; setting multiple temperature gradient levels according to the heat conduction attenuation; statistically analyzing the gradient heat attenuation of the temperature gradient levels. The temperature gradient levels include dividing the statistical temperature difference between the wafer heating surface and the wafer surface to be processed into multiple temperature segments, and setting each temperature segment as a temperature gradient level, with multiple temperature segments corresponding to multiple temperature gradient levels; precisely controlling the actual accurate temperature from the wafer heating surface to the wafer surface to be processed; according to multiple temperature gradient levels, through thermal compensation radiation heating, dynamically compensating for the heat loss at the wafer edge, improving the thermal balance uniformity in the wafer edge region and the wafer center region, compensating for the heating edge effect, and compensating and balancing the subtle temperature difference between the wafer heating surface and the wafer surface to be processed; significantly reducing the radiation heating edge effect and significantly reducing the temperature fluctuation in the wafer edge region.

[0059] In one embodiment, the embedded scanning combination detection subsystem includes:

[0060] An infrared thermal image array detection mechanism is provided with an infrared thermal imager array corresponding to the wafer surface. Through the infrared thermal imager array, the wafer surface is scanned in opposite directions along a spiral curve from the center of the wafer surface and the edge of the wafer surface respectively to perform infrared detection and over-temperature warning prompts for the wafer surface temperature.

[0061] Internal temperature sensing and detection mechanism. An embedded temperature sensor is set in the heating block. The infrared thermal imager array and the embedded temperature sensor form a temperature detection combination, which improves the temperature detection accuracy and temperature difference resolution.

[0062] The principle and effect of the above technical solution are as follows: The embedded scanning combination detection subsystem includes: an infrared thermal imager array detection mechanism, which sets an infrared thermal imager array 130 corresponding to the surface of the wafer. Through the infrared thermal imager array, the surface of the wafer is scanned in opposite directions along a spiral curve from the center of the wafer surface and the edge of the wafer surface respectively to perform infrared detection and over-temperature warning of the wafer surface temperature; an internal temperature sensing and detection mechanism, which sets an embedded temperature sensor 131 in the heating block. The infrared thermal imager array and the embedded temperature sensor form a temperature detection combination, which improves the temperature detection accuracy and temperature difference resolution; the infrared thermal imager array includes at least two infrared scanning temperature measurement rays. The first infrared scanning temperature measurement ray 301 scans the surface of the wafer from the center 300 of the wafer surface along a gradually expanding spiral curve scanning path until the edge 310 of the wafer surface; the second infrared scanning temperature measurement ray 302 scans the surface of the wafer from the edge of the wafer surface along a gradually shrinking spiral curve scanning path until the center of the wafer surface; the gradually expanding spiral curve and the gradually shrinking spiral curve coincide or are spaced in parallel; when the first infrared scanning temperature measurement ray or the second infrared scanning temperature measurement ray scans and detects an abnormal temperature point on the wafer surface, a prompt for the abnormal temperature point on the wafer surface is given, and the abnormal temperature point on the wafer surface and the over-temperature time of the abnormal point are recorded; at the same over-temperature time of the same abnormal point, when there are multiple abnormal temperature points on the wafer surface, the wafer temperature abnormal area formed by the multiple abnormal temperature points on the wafer surface is marked; an over-temperature warning prompt for infrared detection of the wafer surface temperature is given; the temperature detection accuracy and temperature difference resolution are significantly improved.

[0063] In one embodiment, the data analysis, prediction and warning subsystem includes:

[0064] The heating detection data analysis center searches for the historical heating experience data of the wafer according to a large amount of wafer heating detection data, and obtains the big data analysis information of the wafer heating through big data statistical analysis; controls the heating and temperature rising process of the wafer to balance the temperature difference overshoot during the wafer heating process; and controls the cooling and heat dissipation process of the wafer to maintain the uniformity of cooling and heat dissipation.

[0065] The temperature anomaly prediction and warning platform tracks the temperature fluctuations during the wafer heating process, predicts the temperature fluctuation trends of the wafer surface temperature and internal temperature, and gives an early warning of temperature anomalies.

[0066] The principles and effects of the above technical solution are as follows: The data analysis, prediction, and early warning sub-system includes: a heating detection data analysis center for the wafer, which searches for historical experience data of wafer heating based on a large amount of wafer heating detection data, and obtains big data analysis information of wafer heating through big data statistical analysis; controls the heating and temperature rise process of the wafer to balance the overshoot of temperature difference during the wafer heating process; and controls the cooling and heat dissipation process of the wafer to maintain the uniformity of cooling and heat dissipation; a temperature anomaly prediction and early warning platform that tracks the temperature fluctuations during the wafer heating process, predicts the temperature fluctuation trends of the wafer surface and internal temperature, and gives early warnings of temperature anomalies in advance. Tracking the temperature fluctuations during the wafer heating process, predicting the temperature fluctuation trends of the wafer surface and internal temperature, and giving early warnings of temperature anomalies in advance includes: forming an analysis information description file from the big data analysis information of wafer heating; inputting the analysis information description file into the AI large model; the AI large model starts the intelligent understanding of the analysis information description and the full-text search of the large model, searches for the temperature fluctuation range during the wafer heating process, screens the temperature difference experience information between the wafer surface temperature and the wafer internal temperature, and infers the temperature distribution law from the wafer surface to the core of the wafer internal; predicts the temperature fluctuation trends of the wafer surface and internal temperature, and gives early warnings of temperature anomalies in advance; significantly reduces the overshoot of temperature difference and the smoothness of cooling uniformity during the wafer heating process.

[0067] The present invention provides a method for detecting a wafer heating temperature sensing device, including:

[0068] S01, applying high-temperature heat-conducting grease to the threaded end of the temperature sensor, and high-pressure flushing the micro-texture gaps at the tip of the threaded teeth and the recesses between the teeth of the wafer heating block, and the microvoids are filled with the high-temperature heat-conducting grease to make the distribution density of the high-temperature heat-conducting grease uniform;

[0069] S02, using gradient heat compensation radiation heating to dynamically compensate for the heat dissipation at the wafer edge; through dynamic compensation of temperature fluctuations, compensating for the temperature fluctuations in the wafer edge region and the wafer center region;

[0070] S03, scanning the wafer surface through an infrared thermal imager array, and combining with an embedded temperature sensor to form a temperature detection combination to improve the temperature detection accuracy and temperature difference resolution;

[0071] S04, based on a large amount of wafer heating detection data, through big data statistical analysis, controlling the heating and temperature rise process and the temperature dissipation process of the wafer, balancing the overshoot of temperature difference during the wafer heating process, and maintaining the uniformity of cooling and heat dissipation; predicting the temperature fluctuation trends of the wafer surface and internal temperature, and giving early warnings of temperature anomalies in advance.

[0072] The principles and effects of the above technical solution are as follows: The present invention provides a method for detecting a wafer heating temperature sensing device, including: applying high-temperature heat-conducting grease to the threaded end of the temperature sensor, and high-pressure flushing the threaded tip and the micro-texture gaps in the inter-tooth depressions of the wafer heating block, so that the micro voids are filled with the high-temperature heat-conducting grease, and the distribution density of the high-temperature heat-conducting grease is made uniform; adopting gradient thermal compensation radiation heating to dynamically compensate for the heat loss at the wafer edge; through dynamic compensation of temperature fluctuations, compensating for the temperature fluctuations in the wafer edge region and the wafer center region; scanning the wafer surface by an infrared thermal imager array, and combining with an embedded temperature sensor to form a temperature detection combination, enhancing the temperature detection accuracy and temperature difference resolution; according to a large amount of wafer heating detection data, through big data statistical analysis, controlling the wafer heating temperature rise process and the temperature dissipation process, balancing the temperature difference overshoot in the wafer heating process, and maintaining the uniformity of temperature dissipation during cooling; predicting the temperature fluctuation trends on the wafer surface and inside, and giving early warnings of abnormal temperatures; being able to maintain the seal of the high-temperature heat-conducting grease, and significantly reducing the non-uniform area of the extrusion distribution density of the high-temperature heat-conducting grease; high-pressure flushing the threaded tip and the micro-texture gaps in the inter-tooth depressions of the wafer heating block with the high-temperature heat-conducting grease, so that the micro voids are filled with the high-temperature heat-conducting grease, and the distribution density of the high-temperature heat-conducting grease is made uniform; applying high-temperature heat-conducting grease to the threaded end of the temperature sensor, and after the threaded end of the temperature sensor is screwed tightly with the threaded hole, the contact heat conductivity is significantly improved; adopting gradient thermal compensation radiation heating to dynamically compensate for the heat loss at the wafer edge; significantly reducing the edge effect of radiation heating, and through dynamic compensation of temperature fluctuations, compensating for the temperature fluctuations in the wafer edge region and the wafer center region; significantly reducing the temperature fluctuations in the wafer edge region; scanning the wafer surface by an infrared thermal imager array, and combining with an embedded temperature sensor to form a temperature detection combination, enhancing the temperature detection accuracy and temperature difference resolution; significantly improving the temperature detection accuracy and temperature difference resolution; according to a large amount of wafer heating detection data, through big data statistical analysis, controlling the wafer heating temperature rise process and the temperature dissipation process, balancing the temperature difference overshoot in the wafer heating process, and maintaining the uniformity of temperature dissipation during cooling; predicting the temperature fluctuation trends on the wafer surface and inside, and giving early warnings of abnormal temperatures; significantly improving the uniformity of temperature dissipation during cooling; significantly reducing the temperature difference overshoot and the smoothness of the temperature uniformity during wafer heating; The present invention has great significance and remarkable effects.

[0073] In one embodiment, S01 includes:

[0074] S011, applying high-temperature heat-conducting grease to the threaded end of the temperature sensor, and high-pressure flushing the threaded teeth and the inter-tooth depressions of the threaded hole of the heating block with the high-temperature heat-conducting grease, high-pressure flushing the threaded tip and the micro-texture gaps in the inter-tooth depressions of the wafer heating block, and filling the micro-texture gaps in the inter-tooth depressions and the micro-texture gaps on the threaded tooth surface; screwing the threaded end of the temperature sensor tightly into contact with the threaded hole of the wafer heating block, and the micro voids are filled with the high-temperature heat-conducting grease; enhancing the heat conductivity during the detection process between the heating block and the temperature sensor;

[0075] In S012, a heat conduction extension structure is provided at the bottom of the threaded hole, and the surplus of the high-temperature heat-conducting grease is extruded into the heat-conducting extension holes of the heat conduction extension structure, so that the distribution density of the high-temperature heat-conducting grease is uniform.

[0076] The principle and effect of the above technical solution are as follows: High-temperature heat-conducting grease is applied to the threaded end of the temperature sensor, and the thread teeth and the recesses between the teeth of the threaded hole of the heating block are flushed with high-pressure high-temperature heat-conducting grease. The micro-texture gaps at the tips of the thread teeth and the recesses between the teeth of the wafer heating block are flushed with high pressure, and the micro-texture gaps between the teeth and the micro-texture gaps on the surface of the thread teeth are filled; The threaded end of the temperature sensor is screwed into tight contact with the threaded hole of the wafer heating block, and the micro-gaps are filled with high-temperature heat-conducting grease; The heat conduction during the detection process between the heating block and the temperature sensor is improved; A heat conduction extension structure is provided at the bottom of the threaded hole, and the surplus of the high-temperature heat-conducting grease is extruded into the heat-conducting extension holes of the heat conduction extension structure, so that the distribution density of the high-temperature heat-conducting grease is uniform; The heat conduction extension structure includes: a plurality of groups of heat-conducting extension holes are radially arranged with the bottom of the threaded hole as the center. During the process of screwing the threaded end of the temperature sensor into the threaded hole, the surplus of the high-temperature heat-conducting grease is extruded into the heat-conducting extension holes 102 of the heat conduction extension structure 101, so that the distribution density of the high-temperature heat-conducting grease is uniform; After the threaded end of the temperature sensor is screwed into and fastened to the threaded hole, the threaded hole is sealed, the high-temperature heat-conducting grease is kept sealed, and the non-uniform area of the extrusion distribution density of the high-temperature heat-conducting grease is significantly reduced; The contact heat conduction after the threaded end of the temperature sensor is screwed into the threaded hole is significantly improved.

[0077] In one embodiment, S02 includes:

[0078] S021, adopting gradient heat compensation radiation heating to dynamically compensate for the heat loss at the edge of the wafer, compensating for the heating edge effect, and compensating and balancing the fine temperature difference between the heated surface of the wafer and the surface to be processed of the wafer;

[0079] S022, compensating for the temperature fluctuations in the edge area and the center area of the wafer through dynamic compensation of temperature fluctuations; Detecting the temperature in the edge area and the center area of the wafer respectively. When the temperature fluctuation in the edge area or the center area of the wafer exceeds the set temperature fluctuation range, heat compensation radiation heating is carried out for the temperature fluctuations in the edge area and the center area of the wafer to compensate for the temperature fluctuations in the edge area and the center area of the wafer.

[0080] The principles and effects of the above technical solution are as follows: Gradient thermal compensation radiation heating is adopted to dynamically compensate for the heat dissipation at the wafer edge, compensate for the heating edge effect, and compensate and balance the subtle temperature difference between the heated surface of the wafer and the surface of the wafer to be processed; Through dynamic temperature fluctuation compensation, the temperature fluctuations in the wafer edge region and the wafer center region are compensated; The temperatures of the wafer edge region and the wafer center region are detected respectively. When the temperature fluctuation in the wafer edge region or the temperature fluctuation in the wafer center region exceeds the set temperature fluctuation range, thermal compensation radiation heating for wafer temperature fluctuation is performed to compensate for the temperature fluctuations in the wafer edge region and the wafer center region; Gradient thermal compensation radiation heating is adopted to dynamically compensate for the heat dissipation at the wafer edge, compensate for the heating edge effect, and compensate and balance the subtle temperature difference between the heated surface of the wafer and the surface of the wafer to be processed, including: taking the heated surface of the wafer as the starting reference and the surface of the wafer to be processed as the heating end, calculating the heat conduction attenuation from the heated surface of the wafer to the surface of the wafer to be processed; According to the heat conduction attenuation, multiple temperature gradient levels are set; The gradient heat attenuation of the temperature gradient levels is statistically analyzed; The temperature gradient levels include dividing the statistical temperature difference between the heated surface of the wafer and the surface of the wafer to be processed into multiple temperature segments, and each temperature segment is set as a temperature gradient level, and multiple temperature segments correspond to multiple temperature gradient levels; The actual accurate temperatures from the heated surface of the wafer to the surface of the wafer to be processed are precisely controlled; According to multiple temperature gradient levels, through thermal compensation radiation heating, the heat dissipation at the wafer edge is dynamically compensated, so that the thermal balance uniformity of the wafer edge region and the wafer center region is improved, the heating edge effect is compensated, and the subtle temperature difference between the heated surface of the wafer and the surface of the wafer to be processed is compensated; The radiation heating edge effect is significantly reduced, and the temperature fluctuation in the wafer edge region is significantly reduced.

[0081] In one embodiment, S03 includes:

[0082] S031, setting an infrared thermal imager array corresponding to the wafer surface. Through the infrared thermal imager array, the wafer surface is scanned in opposite directions along a spiral curve from the center of the wafer surface and the edge of the wafer surface respectively to perform infrared detection and over-temperature warning for the wafer surface temperature;

[0083] S032, setting embedded temperature sensors in the heating block. The infrared thermal imager array and the embedded temperature sensors form a temperature detection combination to improve the temperature detection accuracy and temperature difference resolution.

[0084] The principles and effects of the above technical solution are as follows: An infrared thermal imager array corresponding to the wafer surface is set up. Through the infrared thermal imager array 130, the wafer surface is scanned in an opposed manner along a spiral curve from the center of the wafer surface and the edge of the wafer surface respectively for infrared detection and over-temperature warning of the wafer surface temperature; An embedded temperature sensor 131 is set in the heating block. The infrared thermal imager array and the embedded temperature sensor form a temperature detection combination, improving the temperature detection accuracy and temperature difference resolution; The infrared thermal imager array includes at least two infrared scanning temperature measurement rays. The first infrared scanning temperature measurement ray 301 scans the wafer surface from the center 300 of the wafer surface along a gradually expanding spiral curve scanning path until the edge 310 of the wafer surface; The second infrared scanning temperature measurement ray 302 scans the wafer surface from the edge of the wafer surface along a gradually contracting spiral curve scanning path until the center of the wafer surface; The gradually expanding spiral curve and the gradually contracting spiral curve coincide or are spaced in parallel; When the first infrared scanning temperature measurement ray or the second infrared scanning temperature measurement ray scans and detects an abnormal temperature point on the wafer surface, a prompt for the abnormal position of the wafer surface temperature is given, and the abnormal position of the wafer surface temperature and the over-temperature time of the abnormal position are recorded; At the same over-temperature time of the abnormal position, when there are multiple abnormal temperature points on the wafer surface, the wafer temperature abnormal area formed by the multiple abnormal temperature points on the wafer surface is marked; An over-temperature warning prompt for infrared detection of the wafer surface temperature is given; Significantly improve the temperature detection accuracy and temperature difference resolution.

[0085] In one embodiment, S04 includes:

[0086] S041, according to a large amount of wafer heating detection data, search for historical experience data of wafer heating, and through big data statistical analysis, obtain big data analysis information of wafer heating; Control the wafer heating and temperature rising process, balance the temperature difference overshoot during the wafer heating process; And control the wafer cooling and heat dissipation process to maintain the uniformity of cooling and heat dissipation;

[0087] S042, track the temperature fluctuation during the wafer heating process, predict the temperature fluctuation trend of the wafer surface and the internal temperature, and give an early warning of temperature abnormality.

[0088] The principle and effects of the above technical solution are as follows: Based on a large amount of wafer heating detection data, search for the historical experience data of wafer heating, and through big data statistical analysis, obtain the big data analysis information of wafer heating; control the heating and temperature rise process of the wafer to balance the temperature difference overshoot during the wafer heating process; and control the cooling and heat dissipation process of the wafer to maintain the uniformity of cooling and heat dissipation; track the temperature fluctuation during the wafer heating process, predict the temperature fluctuation trend of the wafer surface and internal temperature, and give early warning of temperature anomalies in advance; track the temperature fluctuation during the wafer heating process, predict the temperature fluctuation trend of the wafer surface and internal temperature, and give early warning of temperature anomalies in advance, including: forming an analysis information description file from the big data analysis information of wafer heating; inputting the analysis information description file into the AI large model; the AI large model starts the intelligent understanding of the analysis information description and the full-text search of the large model, searches for the temperature fluctuation range during the wafer heating process, screens the temperature difference experience information between the wafer surface temperature and the wafer internal temperature, and infers the temperature distribution law from the wafer surface to the core temperature inside the wafer; predicts the temperature fluctuation trend of the wafer surface and internal temperature, and gives early warning of temperature anomalies in advance; significantly reduces the temperature difference overshoot during the wafer heating process and the smoothness of the cooling uniformity.

[0089] Although the embodiments of the present invention have been disclosed as above, they are not limited to the applications listed in the specification and embodiments. It can be fully applied to various fields suitable for the present invention. For those familiar with the field, additional modifications can be easily made. Therefore, without departing from the general concept defined by the claims and the equivalent scope, the present invention is not limited to the specific details and the examples shown and described here.

Claims

1. A wafer heating temperature sensing device, characterized in that, Including: Micro-texture uniform filling subsystem: Apply high-temperature heat-conducting grease to the threaded end of the temperature sensor, and use high-pressure flushing on the thread tips and the micro-texture gaps in the depressions between the threads of the wafer heating block. The microvoids are filled with the high-temperature heat-conducting grease, making the distribution density of the high-temperature heat-conducting grease uniform; Dynamic thermal compensation radiation heating subsystem: Adopt gradient thermal compensation radiation heating to dynamically compensate for the heat dissipation at the wafer edge; Through dynamic compensation of temperature fluctuations, compensate for the temperature fluctuations in the wafer edge region and the wafer center region; Embedded scanning combination detection subsystem: Scan the wafer surface through an infrared thermal imager array, and combine with an embedded temperature sensor to form a temperature detection combination, improving the temperature detection accuracy and temperature difference resolution; Data analysis, prediction and early warning subsystem: Based on a large amount of wafer heating detection data, through big data statistical analysis, control the wafer heating and temperature rise process and the temperature dissipation process, balance the temperature difference overshoot during the wafer heating process, and maintain the uniformity of temperature dissipation during cooling; Predict the temperature fluctuation trends on the wafer surface and inside the wafer, and give early warnings of abnormal temperatures.

2. The wafer heating temperature sensing device according to claim 1, wherein, Micro-texture uniform filling subsystem, including: High-temperature heat-conducting mechanism: Apply high-temperature heat-conducting grease to the threaded end of the temperature sensor, and conduct high-pressure flushing of the high-temperature heat-conducting grease on the thread teeth and the depressions between the threads of the heating block thread hole. High-pressure flush the micro-texture gaps at the thread tips and the depressions between the threads of the wafer heating block, and fill the micro-texture gaps in the depressions between the threads and the micro-texture gaps on the thread surface; The threaded end of the temperature sensor is in tight contact with the thread hole of the wafer heating block, and the microvoids are filled with the high-temperature heat-conducting grease; Improve the heat conduction during the detection process between the heating block and the temperature sensor; Thermal conduction extension distribution mechanism: A thermal conduction extension structure is set at the bottom of the thread hole, and the surplus of the high-temperature heat-conducting grease is extruded into the heat-conduction extension holes of the thermal conduction extension structure, making the distribution density of the high-temperature heat-conducting grease uniform.

3. The wafer heating temperature sensing device according to claim 1, characterized in that, Dynamic thermal compensation radiation heating subsystem, including: Gradient compensation radiation heating mechanism: Adopt gradient thermal compensation radiation heating to dynamically compensate for the heat dissipation at the wafer edge, compensate for the heating edge effect, and compensate and balance the subtle temperature difference between the heated surface of the wafer and the surface to be processed of the wafer; Temperature fluctuation dynamic compensation mechanism: Through dynamic compensation of temperature fluctuations, compensate for the temperature fluctuations in the wafer edge region and the wafer center region; Detect the temperature in the wafer edge region and the wafer center region respectively. When the temperature fluctuation in the wafer edge region or the temperature fluctuation in the wafer center region exceeds the set temperature fluctuation range, conduct thermal compensation radiation heating for the wafer temperature fluctuation to compensate for the temperature fluctuations in the wafer edge region and the wafer center region.

4. A wafer heating temperature sensing device according to claim 1, wherein, Embedded scanning combination detection subsystem, including: Infrared thermal image array detection mechanism: Set an infrared thermal imager array corresponding to the wafer surface. Through the infrared thermal imager array, scan the wafer surface from the center of the wafer surface and the edge of the wafer surface along a spiral curve in opposite directions, and give an over-temperature warning prompt for the infrared detection of the wafer surface temperature; Internal temperature sensing detection mechanism: Set an embedded temperature sensor in the heating block. The infrared thermal imager array combines with the embedded temperature sensor to form a temperature detection combination, improving the temperature detection accuracy and temperature difference resolution.

5. A wafer heating temperature sensing device according to claim 1, characterized in that, Data analysis, prediction and early warning subsystem, including: The heating detection data analysis center searches for historical experience data of wafer heating based on a large amount of wafer heating detection data, and obtains big data analysis information of wafer heating through big data statistical analysis; controls the wafer heating temperature rising process, and balances the temperature difference overshoot during the wafer heating process; and controls the wafer cooling and heat dissipation process to maintain the uniformity of cooling and heat dissipation. The temperature anomaly prediction and early warning platform tracks the temperature fluctuations during the wafer heating process, predicts the temperature fluctuation trends of the wafer surface and internal temperature, and gives early warnings of temperature anomalies.

6. A method for detecting a wafer heating temperature sensing device, characterized in that, Including: S01, applying high-temperature heat-conducting grease to the threaded end of the temperature sensor, and high-pressure flushing the micro-texture gaps at the tips and between the teeth of the threaded holes of the wafer heating block. The microvoids are filled with high-temperature heat-conducting grease to make the distribution density of the high-temperature heat-conducting grease uniform. S02, adopting gradient heat compensation radiation heating to dynamically compensate for the heat loss at the wafer edge; through dynamic compensation of temperature fluctuations, compensating for the temperature fluctuations in the wafer edge area and the wafer center area. S03, scanning the wafer surface with an infrared thermal imager array, and combining with an embedded temperature sensor to form a temperature detection combination to improve the temperature detection accuracy and temperature difference resolution. S04, based on a large amount of wafer heating detection data, through big data statistical analysis, controlling the wafer heating temperature rising process and the temperature dissipation process, balancing the temperature difference overshoot during the wafer heating process, and maintaining the uniformity of cooling and heat dissipation; predicting the temperature fluctuation trends of the wafer surface and internal temperature, and giving early warnings of temperature anomalies.

7. A method for detecting a wafer heating temperature sensing device according to claim 6, characterized in that, S01 includes: S011, applying high-temperature heat-conducting grease to the threaded end of the temperature sensor, and high-pressure flushing the threaded teeth and the inter-tooth concave parts of the threaded holes of the heating block with high-temperature heat-conducting grease. High-pressure flush the micro-texture gaps at the tips and between the teeth of the threaded holes of the wafer heating block, and fill the micro-texture gaps between the teeth and the micro-texture gaps on the surface of the threaded teeth; the threaded end of the temperature sensor is screwed tightly into contact with the threaded hole of the wafer heating block, and the microvoids are filled with high-temperature heat-conducting grease; improving the heat conduction during the detection process between the heating block and the temperature sensor. S012, a heat-conducting extension structure is arranged at the bottom of the threaded hole, and the surplus high-temperature heat-conducting grease is extruded into the heat-conducting extension hole of the heat-conducting extension structure to make the distribution density of the high-temperature heat-conducting grease uniform.

8. A method for detecting a wafer heating temperature sensing device according to claim 6, characterized in that, S02 includes: S021, adopting gradient heat compensation radiation heating to dynamically compensate for the heat loss at the wafer edge, compensating for the heating edge effect, and compensating and balancing the subtle temperature difference between the heated surface of the wafer and the surface to be processed of the wafer. S022, through dynamic compensation of temperature fluctuations, compensating for the temperature fluctuations in the wafer edge area and the wafer center area; respectively detecting the temperature in the wafer edge area and the temperature in the wafer center area. When the temperature fluctuation in the wafer edge area or the temperature fluctuation in the wafer center area exceeds the set temperature fluctuation range, perform thermal compensation radiation heating for the wafer temperature fluctuation to compensate for the temperature fluctuations in the wafer edge area and the wafer center area.

9. A method for detecting a wafer heating temperature sensing device according to claim 6, characterized in that S03 includes: S031, arranging an infrared thermal imager array corresponding to the wafer surface. Through the infrared thermal imager array, scan the wafer surface from the center of the wafer surface and the edge of the wafer surface along a spiral curve in opposite directions to give an over-temperature warning prompt for the infrared detection of the wafer surface temperature. S032. An embedded temperature sensor is provided in the heating block. The infrared thermal imager array and the embedded temperature sensor form a temperature detection combination, improving the temperature detection accuracy and temperature difference resolution.

10. A method for detecting a wafer heating temperature sensing device according to claim 6, characterized in that, S04 includes: S041. Based on a large amount of wafer heating detection data, search for historical experience data of wafer heating. Through big data statistical analysis, obtain big data analysis information of wafer heating; control the temperature rise process of wafer heating, balance the overshoot of temperature difference during the wafer heating process; and control the temperature reduction and heat dissipation process of the wafer to maintain the uniformity of temperature reduction and heat dissipation. S042. Track the temperature fluctuation during the wafer heating process, predict the temperature fluctuation trend on the wafer surface and inside the wafer, and give an early warning of temperature anomalies.

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