Miniaturized low-sidelobe substrate integrated waveguide horn antenna and wireless communication equipment

Abstract

The invention discloses a miniaturized low-sidelobe substrate integrated waveguide horn antenna and wireless communication equipment, the miniaturized low-sidelobe substrate integrated waveguide horn antenna comprises an upper dielectric substrate, a middle dielectric substrate, a lower dielectric substrate, a substrate integrated waveguide back cavity structure and a substrate integrated waveguide H-plane horn, the middle dielectric substrate extends towards the front end of a horn aperture for a certain distance, and the upper dielectric substrate and the lower dielectric substrate are loaded at the position of the horn aperture; a first metal column array and a second metal column array are loaded in the upper-layer dielectric substrate and the lower-layer dielectric substrate; the length of the flaring part of the horn is shortened by about 50%; a pair of triangular air slots is cut in the horn structure, right trapezoid dielectric chamfers are cut at the tail ends of the three layers of dielectric substrates, and the horn structure adopts an E-surface corrugated wall to realize conical electric field amplitude distribution and uniform electric field phase distribution at the aperture position so as to realize the low sidelobe characteristic of-30dB; third and fourth metal column arrays are loaded in the upper and lower dielectric substrates, the edge metal columns cover the rectangular metal strips, and fifth and sixth metal column arrays are loaded at the tail ends of the upper and lower dielectric substrates. According to the invention, miniaturization and low sidelobe performance are realized at the same time.

Description

Technical Field

[0001] The present invention relates to the technical field of antennas, and in particular to a miniaturized low-sidelobe substrate integrated waveguide horn antenna and a wireless communication device. Background Art

[0002] Horn antennas are widely used in communication systems, radars, imaging, radio astronomy and other fields. Although 3D horn antennas can be used in the above systems, they are usually large in size, expensive, and not easily integrated with other components and devices in the system. The substrate integrated waveguide technology provides a promising method for realizing horn antennas using PCB design processes or other manufacturing technologies, making it possible to design and implement large-scale planar substrate integrated circuits. Summary of the Invention

[0003] The first object of the present invention is to overcome the deficiencies of the prior art and provide a miniaturized low-sidelobe substrate integrated waveguide horn antenna. The antenna shortens the longitudinal length of the horn; by cutting a pair of triangular air slots in the horn structure, cutting a right-angled trapezoidal dielectric cut at the end of the three-layer dielectric substrate, and using an E-plane corrugated wall for the horn structure to achieve a tapered electric field amplitude distribution and a uniform electric field phase distribution at the horn aperture, realizing the low-sidelobe characteristic; by loading a metal column array (acting as a reflector) and a metal column array (acting as a director) in the upper and lower dielectric substrates, loading triangular air slots for correcting the electric field distribution on the middle dielectric substrate, and loading right-angled trapezoidal dielectric cuts for correcting the electric field distribution at the end of the three-layer dielectric substrate, the recovery and enhancement of the gain are realized to achieve longitudinal miniaturization. The antenna finally realizes both longitudinal miniaturization and low-sidelobe performance.

[0004] The second object of the present invention is to provide a wireless communication device.

[0005] The first object of the present invention is achieved by the following technical solutions: a miniaturized low sidelobe substrate integrated waveguide horn antenna, the antenna comprising an upper dielectric substrate, a middle dielectric substrate and a lower dielectric substrate stacked in sequence, a substrate integrated waveguide back cavity structure and a substrate integrated waveguide H-plane horn; metal layers are provided on the upper and lower surfaces of the middle dielectric substrate, called the upper metal layer and the lower metal layer, and a plurality of metal vias are loaded inside the middle dielectric substrate, a part of the metal vias form a U shape and constitute a substrate integrated waveguide back cavity structure together with a part of the substrate of the middle dielectric substrate and the upper and lower metal layers, the remaining metal vias form a horn shape and constitute a substrate integrated waveguide H-plane horn together with a part of the substrate of the middle dielectric substrate and the upper and lower metal layers, the middle dielectric substrate extends a certain distance forward at the front end of the aperture of the substrate integrated waveguide H-plane horn to form a mounting position for mounting the upper and lower dielectric substrates, and the upper and lower dielectric substrates are mounted at the above mounting position and close to the aperture, for improving the impedance matching at the aperture; a first metal column array is loaded inside the upper dielectric substrate and a second metal column array is loaded inside the lower dielectric substrate, for reducing the backward radiation and increasing the gain; shortening the longitudinal length of the substrate integrated waveguide H-plane horn; cutting a pair of triangular air slots inside the substrate integrated waveguide H-plane horn, and cutting a pair of right trapezoidal dielectric cut corners at the same position at the end of the three-layer dielectric substrate, the triangular air slots and the right trapezoidal dielectric cut corners play a role in correcting the electric field distribution; the E-plane of the substrate integrated waveguide H-plane horn is composed of multiple pairs of third, fourth and fifth metal via arrays with unequal spacings to form a corrugated wall, for correcting the electric field distribution, and realizing the low sidelobe characteristic of the antenna through the tapered electric field amplitude distribution and the uniform electric field phase distribution; a third metal column array is loaded inside the upper dielectric substrate and a fourth metal column array is loaded inside the lower dielectric substrate, and the metal columns close to both sides of the upper dielectric substrate in the third metal column array cover a pair of first rectangular metal strips for adjustment and the metal columns close to both sides of the lower dielectric substrate in the fourth metal column array cover a pair of second rectangular metal strips for adjustment, playing a reflecting role, a fifth metal column array is loaded at the end of the upper dielectric substrate, and a sixth metal column array is loaded at the end of the lower dielectric substrate, playing the role of a director, for realizing the recovery and improvement of the gain, thereby realizing the longitudinal miniaturization.

[0006] Further, the upper and lower dielectric substrates are symmetric with respect to the middle dielectric substrate, the widths of the three-layer dielectric substrates are equal, the thicknesses are the same, and the ends are aligned; a pair of right trapezoidal dielectric cut corners cut at the end penetrate through the three-layer dielectric substrates.

[0007] Furthermore, the first metal column array and the second metal column array are symmetric about the middle dielectric substrate. Each metal column array includes a row of metal columns and two metal columns near both sides of the dielectric substrate. Each row of metal columns is composed of a plurality of metal columns with the same size and equal spacing; the third metal column array and the fourth metal column array are symmetric about the middle dielectric substrate. Each metal column array includes a row of metal columns, which is composed of a plurality of metal columns with the same size and equal spacing; the fifth metal column array and the sixth metal column array are located in the upper and lower dielectric substrates, near the ends of the dielectric substrates, and are symmetric about the middle dielectric substrate. The fifth metal column array includes four groups of metal columns, which are symmetric about the center line of the upper dielectric substrate. Each group of metal columns is composed of two metal columns with the same size; the heights of the first, second, third, fourth, fifth, and sixth metal column arrays are the thicknesses of their respective dielectric substrates.

[0008] Furthermore, the first rectangular metal strip and the second rectangular metal strip are symmetric about the middle dielectric substrate, are located on the outer surfaces of the upper and lower dielectric substrates, and cover a plurality of metal columns at both ends of the third metal column array and the fourth metal column array; the inner surface of the upper dielectric substrate is covered with a first rectangular metal layer, and the inner surface of the lower dielectric substrate is covered with a second rectangular metal layer.

[0009] Furthermore, the triangular air slots are a pair of right-angled triangular air slots symmetric about the center line of the middle dielectric substrate cut from the H-plane horn of the substrate integrated waveguide. The end right-angled sides of the air slots coincide with the edges of the upper and lower metal layers of the middle dielectric substrate.

[0010] Furthermore, the first metal via array includes two rows of metal via arrays, which are symmetric about the center line of the middle dielectric substrate and parallel to the center line of the middle dielectric substrate. The second metal via array is perpendicular to and connected to the first metal via array, and both are composed of metal vias with the same size arranged at equal intervals; the first metal via array and the second metal via array are respectively connected to the upper and lower metal layers, and the height is the thickness of the middle dielectric substrate.

[0011] Furthermore, the upper and lower metal layers form the broad side of the substrate integrated waveguide, which is the H-plane of the substrate integrated waveguide horn. The third metal via hole array, the fourth metal via hole array, and the fifth metal via hole array are respectively connected to the upper and lower metal layers to form the narrow side of the substrate integrated waveguide, which is the E-plane of the substrate integrated waveguide horn, and the height is the thickness of the middle dielectric substrate. Among them, both the third metal via hole array and the fourth metal via hole array are inclined metal via hole arrays, symmetric about the center line of the middle dielectric substrate, and the angle with the center line of the middle dielectric substrate is 38°. The third metal via hole array includes two rows of metal via hole arrays, the fourth metal via hole array includes four rows of metal via hole arrays, the third metal via hole array is located in the outermost layer of the fourth metal via hole array, and each row of metal via hole arrays is composed of metal via holes with the same size arranged at equal intervals. The metal via hole pitch of the third metal via hole array is smaller than that of the fourth metal via hole array. The fifth metal via hole array includes two rows of metal via hole arrays, symmetric about the center line of the middle dielectric substrate and parallel to the center line of the middle dielectric substrate, and is composed of metal via holes with the same size arranged at equal intervals.

[0012] Furthermore, the antenna is fed by a coaxial feeding structure. The length of the feeding probe of the coaxial feeding structure is less than the thickness of the middle dielectric substrate, and circular slots with different diameters are etched on the upper and lower metal layers with the feeding probe as the center.

[0013] Furthermore, the coaxial feeding structure is located in the substrate integrated waveguide back cavity structure.

[0014] The second object of the present invention is achieved by the following technical solution: a wireless communication device, including the above-mentioned miniaturized low sidelobe substrate integrated waveguide horn antenna.

[0015] Compared with the prior art, the present invention has the following advantages and beneficial effects:

[0016] 1. The antenna of the present invention reduces the longitudinal length of the flare part of the horn, and realizes the recovery and improvement of gain and the longitudinal miniaturization of the antenna by loading metal posts, air slots, dielectric chamfers that play a reflection role, and metal posts that play a director role; realizes the low sidelobe characteristic by loading air slots, dielectric chamfers and corrugated walls; the antenna of the present invention finally realizes the performance of miniaturization and low sidelobe at the same time.

[0017] 2. The antenna of the present invention realizes longitudinal miniaturization of about 50% of the length of the flare part of the horn, the impedance bandwidth is 4% (23.6 - 24.58 GHz), the gain in the passband is 8.03 - 8.66 dB, and realizes the low sidelobe characteristic of -30 dB. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is an exploded view of the miniaturized low sidelobe substrate integrated waveguide horn antenna according to the embodiment of the present invention.

[0019] Figure 2 This is the top view of the miniaturized low sidelobe substrate integrated waveguide horn antenna according to an embodiment of the present invention.

[0020] Figure 3 This is the bottom view of the miniaturized low sidelobe substrate integrated waveguide horn antenna according to an embodiment of the present invention.

[0021] Figure 4 This is the side view of the miniaturized low sidelobe substrate integrated waveguide horn antenna according to an embodiment of the present invention.

[0022] Figure 5 This is the E-plane radiation pattern of the miniaturized low sidelobe substrate integrated waveguide horn antenna according to an embodiment of the present invention at 23.8 GHz.

[0023] Figure 6 This is the H-plane radiation pattern of the miniaturized low sidelobe substrate integrated waveguide horn antenna according to an embodiment of the present invention at 23.8 GHz.

[0024] Figure 7 This is the E-plane radiation pattern of the miniaturized low sidelobe substrate integrated waveguide horn antenna according to an embodiment of the present invention at 24.15 GHz.

[0025] Figure 8 This is the H-plane radiation pattern of the miniaturized low sidelobe substrate integrated waveguide horn antenna according to an embodiment of the present invention at 24.15 GHz.

[0026] Figure 9 This is the E-plane radiation pattern of the miniaturized low sidelobe substrate integrated waveguide horn antenna according to an embodiment of the present invention at 24.5 GHz.

[0027] Figure 10 This is the H-plane radiation pattern of the miniaturized low sidelobe substrate integrated waveguide horn antenna according to an embodiment of the present invention at 24.5 GHz.

[0028] Figure 11 This is the S-parameter diagram of the miniaturized low sidelobe substrate integrated waveguide horn antenna according to an embodiment of the present invention.

[0029] Figure 12 This is the gain curve diagram of the miniaturized low sidelobe substrate integrated waveguide horn antenna according to an embodiment of the present invention. Detailed implementation manners

[0030] The present invention will be further described in detail below in conjunction with embodiments and the accompanying drawings, but the implementation manners of the present invention are not limited thereto.

[0031] Embodiment 1

[0032] Due to the advantages of small volume, easy integration, and simple manufacturing process of the substrate integrated waveguide (SIW) H-plane horn antenna, it is competitive in millimeter-wave communication applications. With the continuous improvement of the requirements for radio frequency front-end integration, the SIW horn antenna is also developing towards a more compact direction. The common method is to directly shorten the horn length under a fixed horn aperture, and then improve the deteriorated antenna performance through amplitude and phase adjustment. Moreover, many applications require a sufficiently low side lobe level (SLL) to avoid interference in the side lobe direction. The SLL of planar horn antennas mostly cannot reach -30 dB, and the antennas achieving an SLL of -30 dB use metal structures, which are large in volume, heavy in weight, and not easy to integrate. Therefore, this embodiment provides a miniaturized low-side-lobe substrate integrated waveguide horn antenna.

[0033] As Figures 1 to 4As shown in the figure, this embodiment discloses a miniaturized low sidelobe substrate integrated waveguide horn antenna, which can be applied to wireless communication devices. The antenna includes an upper dielectric substrate 1, a middle dielectric substrate 3, and a lower dielectric substrate 2 stacked in sequence, as well as a substrate integrated waveguide back cavity structure 20 and a substrate integrated waveguide H-plane horn 21. Metal layers are provided on both the upper and lower surfaces of the middle dielectric substrate 3, which are called the upper metal layer 15 and the lower metal layer 16. A plurality of metal through holes are loaded inside the middle dielectric substrate 3. Some of the metal through holes form a U shape and, together with a part of the substrate of the middle dielectric substrate 3 and the upper and lower metal layers 15 and 16, constitute the substrate integrated waveguide back cavity structure 20. The remaining metal through holes form a horn shape and, together with a part of the substrate of the middle dielectric substrate 3 and the upper and lower metal layers 15 and 16, constitute the substrate integrated waveguide H-plane horn 21. The middle dielectric substrate 3 extends a certain distance towards the front end of the aperture of the substrate integrated waveguide H-plane horn 21 to form an installation position for installing the upper and lower dielectric substrates 1 and 2. The upper and lower dielectric substrates 1 and 2 are installed at the above installation position and close to the horn aperture to improve the impedance matching at the horn aperture. The first metal column array 4 is loaded inside the upper dielectric substrate 1 and the second metal column array 5 is loaded inside the lower dielectric substrate 2 to reduce the backward radiation and improve the gain. The longitudinal length of the substrate integrated waveguide H-plane horn 21 is shortened. A pair of triangular air slots 14 are cut inside the substrate integrated waveguide H-plane horn 21, and a pair of right trapezoidal dielectric cut corners 22 are cut at the same position at the end of the three-layer dielectric substrate. The triangular air slots 14 and the right trapezoidal dielectric cut corners 22 play a role in correcting the electric field distribution. The E-plane of the substrate integrated waveguide H-plane horn 21 is composed of four pairs (a total of eight rows) of third, fourth, and fifth metal through hole arrays 26, 27, and 28 with unequal spacings to form a corrugated wall for correcting the electric field distribution, and the low sidelobe characteristic of the antenna is realized through the tapered electric field amplitude distribution and the uniform electric field phase distribution. The third metal column array 6 is loaded inside the upper dielectric substrate 1 and the fourth metal column array 7 is loaded inside the lower dielectric substrate 2. The metal columns close to both sides of the upper dielectric substrate 1 in the third metal column array 6 cover a pair of first rectangular metal strips 10 for adjustment, and the metal columns close to both sides of the lower dielectric substrate 2 in the fourth metal column array 7 cover a pair of second rectangular metal strips 11 for adjustment, which play a reflection role. The fifth metal column array 12 is loaded at the end of the upper dielectric substrate 1 and the sixth metal column array 13 is loaded at the end of the lower dielectric substrate 2, which play the role of a director for realizing the recovery and improvement of the gain, thereby realizing longitudinal miniaturization.

[0034] Specifically, the upper and lower dielectric substrates 1 and 2 are symmetric with respect to the middle dielectric substrate 3. The widths of the three dielectric substrates are equal, the thicknesses are the same, and the ends are aligned. A pair of right trapezoidal dielectric cut corners 22 cut at the end penetrate through the three dielectric substrates.

[0035] Specifically, the first metal pillar array 4 and the second metal pillar array 5 are symmetric about the middle dielectric substrate 3. Each metal pillar array includes a row of metal pillars and two metal pillars near both sides of the dielectric substrate. Each row of metal pillars is composed of a plurality of metal pillars with the same size and equal spacing; the third metal pillar array 6 and the fourth metal pillar array 7 are symmetric about the middle dielectric substrate 3. Each metal pillar array includes a row of metal pillars, which is composed of a plurality of metal pillars with the same size and equal spacing; the fifth metal pillar array 12 and the sixth metal pillar array 13 are located in the upper and lower dielectric substrates 1 and 2, near the ends of the dielectric substrates, and are symmetric about the middle dielectric substrate 3. The fifth metal pillar array 12 includes four groups of metal pillars, which are symmetric about the center line of the upper dielectric substrate 1. Each group of metal pillars is composed of two metal pillars with the same size; the heights of the first, second, third, fourth, fifth, and sixth metal pillar arrays 4, 5, 6, 7, 12, and 13 are the thicknesses of their respective dielectric substrates.

[0036] Specifically, the first rectangular metal strip 10 and the second rectangular metal strip 11 are symmetric about the middle dielectric substrate 3, and are located on the outer surfaces of the upper and lower dielectric substrates 1 and 2, covering a plurality of metal pillars at both ends of the third metal pillar array 6 and the fourth metal pillar array 7; the inner surface of the upper dielectric substrate 1 is covered with a first rectangular metal layer 8, and the inner surface of the lower dielectric substrate 2 is covered with a second rectangular metal layer 9.

[0037] Specifically, the triangular air slot 14 is a pair of right-angled triangular air slots symmetric about the center line of the middle dielectric substrate 3 cut out from the inside of the substrate integrated waveguide H-plane horn 21. The end right-angled sides of the air slots coincide with the edges of the upper and lower metal layers 15 and 16 of the middle dielectric substrate 3.

[0038] Specifically, the first metal via array 24 includes two rows of metal via arrays, which are symmetric about the center line of the middle dielectric substrate 3 and parallel to the center line of the middle dielectric substrate 3. The second metal via array 25 is perpendicular to and connected to the first metal via array 24. Both are composed of metal vias with the same size arranged at equal intervals; the first metal via array 24 and the second metal via array 25 are respectively connected to the upper and lower metal layers 15 and 16, and the height is the thickness of the middle dielectric substrate 3.

[0039] Specifically, the upper and lower metal layers 15 and 16 form the wide side of the substrate integrated waveguide, which is the H-plane of the substrate integrated waveguide H-plane horn. The third metal via hole array 26, the fourth metal via hole array 27, and the fifth metal via hole array 28 are respectively connected to the upper and lower metal layers 15 and 16 to form the narrow side of the substrate integrated waveguide, which is the E-plane of the substrate integrated waveguide H-plane horn, and the height is the thickness of the middle dielectric substrate 3. Among them, both the third metal via hole array 26 and the fourth metal via hole array 27 are inclined metal via hole arrays, symmetric about the center line of the middle dielectric substrate 3, and the included angle with the center line of the middle dielectric substrate 3 is 38°. The third metal via hole array 26 includes two rows of metal via hole arrays, the fourth metal via hole array 27 includes four rows of metal via hole arrays, the third metal via hole array 26 is located on the outermost layer of the fourth metal via hole array 27, and each row of metal via hole arrays is composed of metal via holes of the same size arranged at equal intervals. The pitch of the metal via holes in the third metal via hole array 26 is smaller than the pitch of the metal via holes in the fourth metal via hole array 27. The fifth metal via hole array 28 includes two rows of metal via hole arrays, symmetric about the center line of the middle dielectric substrate 3, and parallel to the center line of the middle dielectric substrate 3, and is composed of metal via holes of the same size arranged at equal intervals.

[0040] Specifically, the antenna is fed by a coaxial feeding structure 23. The coaxial feeding structure 23 is located in the substrate integrated waveguide back cavity structure 20. The length of the feeding probe 19 of the coaxial feeding structure 23 is less than the thickness of the middle dielectric substrate 3. Circular slots 17 and 18 with different diameters are etched on the upper and lower metal layers 15 and 16 with the feeding probe 19 as the center.

[0041] Specifically, the coaxial feeding structure 23 is located in the substrate integrated waveguide back cavity structure 20.

[0042] Specifically, the width of the middle dielectric substrate 3 is 18.6 mm and the length is 23.1 mm. The upper and lower dielectric substrates 1 and 2 have the same width as it and the length is 10.3 mm. The diameters of the first, second, third, and fourth metal pillar arrays 4, 5, 6, and 7 in the upper and lower dielectric substrates 1 and 2 are 0.8 mm. The adjacent metal pillar pitches of the first and second metal pillar arrays 4 and 5 are 1.94 mm and 1.04 mm respectively. The adjacent metal pillar pitches of the third and fourth metal pillar arrays 6 and 7 are 1.94 mm. The diameters of the fifth and sixth metal pillar arrays 12 and 13 in the upper and lower dielectric substrates 1 and 2 are 0.24 mm, and the adjacent metal pillar pitch is 0.5 mm.

[0043] Specifically, the lengths of the upper and lower bottom sides of the right trapezoidal dielectric chamfer 22 are 1.5 mm and 6 mm.

[0044] Specifically, the lengths of the two right-angled sides of the triangular air slot 14 are 6 mm and 4.2 mm.

[0045] Specifically, the diameter of the metal vias in the middle dielectric substrate 3 is 0.8 mm, and the distance between the centers of two adjacent metal vias is 1 mm in the substrate integrated waveguide back cavity structure 20 and 0.98 mm, 1.59 mm, and 1.1 mm in the third, fourth, and fifth metal via arrays 26, 27, and 28 respectively; the distance between the first metal via arrays in the substrate integrated waveguide back cavity structure 20 is 6 mm; the inclination angles of the third and fourth metal via arrays 26 and 27 are 38°.

[0046] Specifically, the upper and lower dielectric substrates 1 and 2 and the middle dielectric substrate 3 are made of Rogers TMM4, with a dielectric constant of 4.5, a loss tangent of 0.002, and a thickness of 1.524 mm.

[0047] In this embodiment, by loading an extended dielectric substrate at the aperture of the horn antenna, the upper and lower dielectric substrates improve the impedance matching at the horn aperture; the first and second metal column arrays are loaded in the upper and lower dielectric substrates to form a dipole array, which is used to reduce the backward radiation and improve the gain; the length of the horn flare part is shortened by about 50%; a pair of triangular air slots are cut in the horn structure, and a right-angled trapezoidal dielectric cut-off is cut at the end of the three-layer dielectric substrate. The horn structure uses an E-plane corrugated wall to realize the tapered electric field amplitude distribution and uniform electric field phase distribution at the aperture, so as to achieve the low side lobe characteristic of -30 dB; the third and fourth metal column arrays are loaded in the upper and lower dielectric substrates, and the edge metal columns cover the rectangular metal strips for adjustment, which play a reflecting role. The triangular air slots and the right-angled trapezoidal dielectric cut-off play a role in correcting the electric field distribution. The fifth and sixth metal column arrays are loaded at the ends of the upper and lower dielectric substrates, which play the role of a director, and are used to realize the recovery and improvement of the gain and achieve longitudinal miniaturization. The antenna uses coaxial feeding. The present invention simultaneously realizes longitudinal miniaturization (50%) and low side lobe performance (-30 dB).

[0048] Figure 5 and Figure 6 are the E-plane radiation pattern and H-plane radiation pattern of the above-mentioned miniaturized low side lobe substrate integrated waveguide horn antenna of this embodiment at 23.8 GHz. It can be seen from the figure that the cross polarization is less than -50 dB.

[0049] Figure 7 and Figure 8 are the E-plane radiation pattern and H-plane radiation pattern of the above-mentioned miniaturized low side lobe substrate integrated waveguide horn antenna of this embodiment at 24.15 GHz. It can be seen from the figure that the cross polarization is less than -50 dB.

[0050] Figure 9 and Figure 10The E-plane radiation pattern and H-plane radiation pattern of the miniaturized low sidelobe substrate integrated waveguide horn antenna in this embodiment at 24.5 GHz are shown. It can be seen from the figure that the cross polarization is less than -50 dB.

[0051] Figure 11 The S-parameter simulation curve of the miniaturized low sidelobe substrate integrated waveguide horn antenna in this embodiment is shown. It can be seen from the figure that the impedance bandwidth of this antenna is about 4% (23.6 - 24.58 GHz).

[0052] Figure 12 The gain simulation curve of the miniaturized low sidelobe substrate integrated waveguide horn antenna in this embodiment is shown. It can be seen from the figure that the gain within the passband is 8.03 - 8.66 dB.

[0053] In summary, for the antenna of the present invention, impedance matching is improved by loading extended dielectrics and upper and lower dielectric plates at the aperture; backward radiation is reduced and gain is increased by loading dipole arrays in the upper and lower dielectric plates; the flare length of the horn is reduced by about 50%; the electric field distribution is corrected to a tapered amplitude distribution and a uniform phase distribution by loading air slots, dielectric chamfers and corrugated walls to achieve low sidelobe characteristics; the recovery and enhancement of gain are achieved by loading metal posts, air slots, dielectric chamfers that act as reflectors and metal posts that act as directors, thereby achieving longitudinal miniaturization. The antenna uses coaxial feeding, with an impedance bandwidth of 4% and a gain within the passband of 8.03 - 8.66 dB, achieving a low sidelobe characteristic of -30 dB. Finally, a miniaturized low sidelobe substrate integrated waveguide horn antenna is realized.

[0054] Embodiment 2

[0055] This embodiment provides a wireless communication device, including the miniaturized low sidelobe substrate integrated waveguide horn antenna described in Embodiment 1.

[0056] The above embodiments are preferred embodiments of the present invention, but the embodiments of the present invention are not limited to the above embodiments. Any other changes, modifications, substitutions, combinations, and simplifications made without departing from the spirit and principle of the present invention shall be equivalent substitution methods and are all included in the protection scope of the present invention.

Claims

1. A miniaturized low sidelobe substrate integrated waveguide horn antenna, characterized in that, The antenna includes an upper dielectric substrate (1), a middle dielectric substrate (3), and a lower dielectric substrate (2) stacked in sequence, a substrate integrated waveguide back cavity structure (20), and a substrate integrated waveguide H-plane horn (21); both the upper and lower surfaces of the middle dielectric substrate (3) are provided with metal layers, referred to as an upper metal layer (15) and a lower metal layer (16). A plurality of metal vias are loaded inside the middle dielectric substrate (3). A part of the metal vias form a U shape and, together with a part of the substrate of the middle dielectric substrate (3) and the upper and lower metal layers (15), (16), constitute the substrate integrated waveguide back cavity structure (20). The remaining metal vias form a horn shape and, together with a part of the substrate of the middle dielectric substrate (3) and the upper and lower metal layers (15), (16), constitute the substrate integrated waveguide H-plane horn (21). The middle dielectric substrate (3) extends a certain distance towards the front end of the aperture of the substrate integrated waveguide H-plane horn (21) to form an installation position for installing the upper and lower dielectric substrates (1), (2). The upper and lower dielectric substrates (1), (2) are installed at the above installation position and close to the horn aperture to improve the impedance matching at the horn aperture; a first metal post array (4) is loaded inside the upper dielectric substrate (1) and a second metal post array (5) is loaded inside the lower dielectric substrate (2) to reduce the backward radiation and increase the gain; the longitudinal length of the substrate integrated waveguide H-plane horn (21) is shortened; a pair of triangular air slots (14) are cut inside the substrate integrated waveguide H-plane horn (21), and a pair of right trapezoidal dielectric cut corners (22) are cut at the same position at the end of the three-layer dielectric substrate. The triangular air slots (14) and the right trapezoidal dielectric cut corners (22) play a role in correcting the electric field distribution; the E-plane of the substrate integrated waveguide H-plane horn (21) is composed of multiple pairs of third, fourth, and fifth metal via arrays (26), (27), (28) with unequal spacings to form a corrugated wall for correcting the electric field distribution, and the low sidelobe characteristic of the antenna is achieved through the tapered electric field amplitude distribution and the uniform electric field phase distribution; a third metal post array (6) is loaded inside the upper dielectric substrate (1) and a fourth metal post array (7) is loaded inside the lower dielectric substrate (2), and the metal posts close to both sides of the upper dielectric substrate (1) in the third metal post array (6) cover a pair of first rectangular metal strips (10) for adjustment and the metal posts close to both sides of the lower dielectric substrate (2) in the fourth metal post array (7) cover a pair of second rectangular metal strips (11) for adjustment, which play a reflecting role. A fifth metal post array (12) is loaded at the end of the upper dielectric substrate (1) and a sixth metal post array (13) is loaded at the end of the lower dielectric substrate (2), which play the role of a director for realizing the recovery and enhancement of the gain, thereby realizing longitudinal miniaturization.

2. The miniaturized low sidelobe substrate integrated waveguide horn antenna according to claim 1, characterized in that The upper and lower dielectric substrates (1), (2) are symmetric about the middle dielectric substrate (3). The widths of the three-layer dielectric substrates are equal, the thicknesses are the same, and the ends are aligned; a pair of right trapezoidal dielectric cut corners (22) cut at the ends penetrate through the three-layer dielectric substrates.

3. The miniaturized low sidelobe substrate integrated waveguide horn antenna according to claim 2, wherein The first metal pillar array (4) and the second metal pillar array (5) are symmetric about the middle dielectric substrate (3). Each metal pillar array includes a row of metal pillars and two metal pillars near both sides of the dielectric substrate. Each row of metal pillars is composed of a plurality of metal pillars with the same size and equal spacing; the third metal pillar array (6) and the fourth metal pillar array (7) are symmetric about the middle dielectric substrate (3). Each metal pillar array includes a row of metal pillars, which is composed of a plurality of metal pillars with the same size and equal spacing; the fifth metal pillar array (12) and the sixth metal pillar array (13) are located in the upper and lower dielectric substrates (1), (2), near the ends of the dielectric substrates, and are symmetric about the middle dielectric substrate (3). The fifth metal pillar array (12) includes four groups of metal pillars, which are symmetric about the center line of the upper dielectric substrate (1). Each group of metal pillars is composed of two metal pillars with the same size; the heights of the first, second, third, fourth, fifth, and sixth metal pillar arrays (4), (5), (6), (7), (12), (13) are the thicknesses of their respective dielectric substrates.

4. The miniaturized low sidelobe substrate integrated waveguide horn antenna according to claim 3, wherein The first rectangular metal strip (10) and the second rectangular metal strip (11) are symmetric about the middle dielectric substrate (3), located on the outer surfaces of the upper and lower dielectric substrates (1), (2), and cover a plurality of metal pillars at both ends of the third metal pillar array (6) and the fourth metal pillar array (7); the inner surface of the upper dielectric substrate (1) is covered with a first rectangular metal layer (8), and the inner surface of the lower dielectric substrate (2) is covered with a second rectangular metal layer (9).

5. The miniaturized low sidelobe substrate integrated waveguide horn antenna according to claim 4, characterized in that, The triangular air slots (14) are a pair of right-angled triangular air slots symmetric about the center line of the middle dielectric substrate (3) cut out from the substrate integrated waveguide H-plane horn (21). The end right-angled sides of the air slots coincide with the side lines of the upper and lower metal layers (15), (16) of the middle dielectric substrate (3).

6. The miniaturized low sidelobe substrate integrated waveguide horn antenna according to claim 5, characterized in that, The first metal via array (24) includes two rows of metal via arrays, which are symmetric about the center line of the middle dielectric substrate (3) and parallel to the center line of the middle dielectric substrate (3). The second metal via array (25) is perpendicular to and connected to the first metal via array (24). Both are composed of metal vias with the same size arranged at equal intervals; the first metal via array (24) and the second metal via array (25) are respectively connected to the upper and lower metal layers (15), (16), and the height is the thickness of the middle dielectric substrate (3).

7. The miniaturized low sidelobe substrate integrated waveguide horn antenna according to claim 6, wherein The upper and lower metal layers (15), (16) form the wide side of the substrate integrated waveguide, which is the H-plane of the substrate integrated waveguide horn. The third metal via hole array (26), the fourth metal via hole array (27) and the fifth metal via hole array (28) are respectively connected to the upper and lower metal layers (15), (16) to form the narrow side of the substrate integrated waveguide, which is the E-plane of the substrate integrated waveguide horn, and the height is the thickness of the middle dielectric substrate (3); wherein, both the third metal via hole array (26) and the fourth metal via hole array (27) are inclined metal via hole arrays, symmetric about the center line of the middle dielectric substrate (3), and the included angle with the center line of the middle dielectric substrate (3) is 38°; the third metal via hole array (26) includes two rows of metal via hole arrays, the fourth metal via hole array (27) includes four rows of metal via hole arrays, the third metal via hole array (26) is located in the outermost layer of the fourth metal via hole array (27), and each row of metal via hole arrays is composed of metal via holes with the same size arranged at equal intervals. The pitch of the metal via holes in the third metal via hole array (26) is smaller than the pitch of the metal via holes in the fourth metal via hole array (27); the fifth metal via hole array (28) includes two rows of metal via hole arrays, symmetric about the center line of the middle dielectric substrate (3) and parallel to the center line of the middle dielectric substrate (3), and is composed of metal via holes with the same size arranged at equal intervals.

8. The miniaturized low sidelobe substrate integrated waveguide horn antenna according to claim 7, wherein The antenna is fed by a coaxial feeding structure (23), and the length of the feeding probe (19) of the coaxial feeding structure (23) is less than the thickness of the middle dielectric substrate (3). Circular slots (17), (18) with different diameters are etched on the upper and lower metal layers (15), (16) with the feeding probe (19) as the center.

9. The miniaturized low-sidelobe substrate integrated waveguide horn antenna according to claim 8, characterized in that The coaxial feeding structure (23) is located in the substrate integrated waveguide back cavity structure (20).

10. A wireless communication device, characterized in that, It includes the miniaturized low side lobe substrate integrated waveguide horn antenna according to any one of claims 1-9.

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