A method for rapidly preparing SnSe crystals
By introducing graphite rods to assist in heat conduction during SnSe crystal growth, the problem of excessively long preparation time was solved, enabling rapid preparation and efficient production of large SnSe single crystals, which is suitable for the new energy field.
CN120625179BActive Publication Date: 2026-05-05BEIHANG UNIV
2 Cites 0 Cited by
Patent Information
- Application Number
- CN202510852457.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2025-06-24
- Publication Date
- 2026-05-05
- Estimated Expiration
- 2045-06-24
AI Technical Summary
Technical Problem
The preparation time of SnSe crystals in the existing technology is too long and the size of each preparation is small, which hinders their industrial application in the field of new energy.
Method used
A graphite-assisted heat conduction method was used to synthesize large SnSe single crystals by inserting graphite rods into quartz tubes and combining a mixture of Sn, Se, Mo and SnBr2 in a specific stoichiometric ratio in a tube furnace. The cooling rate was controlled to shorten the growth cycle.
Benefits of technology
Large SnSe single crystals were successfully grown in a short period of time while maintaining excellent thermoelectric properties, enabling rapid crystal preparation and mass production, and reducing production costs.
✦ Generated by Eureka AI based on patent content.
Abstract
This invention discloses a rapid method for preparing SnSe crystals, shortening the crystal growth cycle from 260 hours to 52 hours. Compared to the traditional vertical gradient multi-temperature zone cooling method, this method overcomes the difficulty of heat dissipation in the central region during SnSe crystal growth by inserting a graphite rod at the center of the melt to achieve heat dissipation and balance the internal temperature zones. This allows for the successful growth of large SnSe single crystals in a shorter time while maintaining excellent thermoelectric properties. Specifically, the method involves first preparing a mixture according to stoichiometric proportions; then placing the mixture in a quartz tube and fixing a carbon rod at the center, followed by vacuum treatment; finally, placing the quartz tube in a dual-temperature zone vertical tube furnace to react and obtain the corresponding crystals. This invention shortens the crystal preparation time, improves production efficiency, and is applicable to mass production.
Need to check novelty before this filing date? Find Prior Art