Double-H-bridge high-frequency pulse circuit based on IGBT

Abstract

The invention discloses a double-H-bridge high-frequency pulse circuit based on an IGBT (Insulated Gate Bipolar Translator), relates to the field of electronic control, and aims to solve the problem that the circuit reliability is reduced when a conventional IGBT high-frequency high-voltage pulse circuit generates a high-frequency pulse. The double-H-bridge high-frequency pulse circuit based on the IGBT comprises a rectification module, a double-H-bridge high-frequency high-voltage pulse module and a protection module. The double-H-bridge high-frequency high-voltage pulse module comprises two H-bridge circuits which are connected in parallel; one side of the rectification module is connected with a high-voltage AC power supply, and the other side is connected with the double-H-bridge high-frequency high-voltage pulse module. And the protection module is connected with the double-H-bridge high-frequency high-voltage pulse module. Through the design of the double-H-bridge structure, stable high-frequency high-voltage pulses can be obtained, specifically, transient changes of voltage and current can be achieved, and the stability of the circuit is maintained; high-frequency and high-voltage pulses of more than 10KV and 100KHz can be obtained; modular design is achieved, the structure is simple, and installation is convenient.

Description

Technical Field

[0001] The present invention relates to the field of electronic control, and in particular to an IGBT-based dual H-bridge high-frequency pulse circuit. Background Art

[0002] In the electronics field, pulse modulation and insulated-gate bipolar transistor (IGBT) control technology are widely used and crucial. Pulse modulation technology can precisely adjust the frequency and amplitude of pulse signals, achieving efficient energy conversion in DC-AC converters and precise motion control in servo control systems. Leveraging the superior performance of IGBTs, IGBT control technology effectively manages the forward and reverse charge and discharge of capacitors, ensuring precise motor drive in CNC machine tools, optimizing energy management in vehicle drive control, and ensuring stable power supply in industrial switching power supplies. High-frequency, high-voltage pulse circuits based on IGBTs are indispensable in complex systems. For example, in the medical field, high-voltage pulse generators use IGBT-based high-frequency, high-voltage pulse circuits to generate high-frequency, high-voltage pulses, which can be used for electroporation therapy of tumors. In industrial processing, electric spark equipment relies on pulse discharges generated by IGBT-based high-frequency, high-voltage pulse circuits to precisely machine workpieces. In scientific research, high-frequency, high-voltage pulse circuits based on IGBTs can excite gases to form plasmas and maintain their stability, facilitating plasma physics research.

[0003] IGBT-based high-frequency, high-voltage pulse circuits are H-bridge circuits formed by four IGBTs. However, the faster the high-voltage current switches between positive and negative voltages, the greater the thermal stress generated within the IGBT. When the output pulse frequency exceeds 50kHz, the overall circuit reliability is significantly reduced. Therefore, conventional IGBT high-frequency, high-voltage pulse circuits are not suitable for generating pulses at excessively high frequencies. Summary of the Invention

[0004] The purpose of the present invention is to solve the problem of reduced circuit reliability of conventional IGBT high-frequency and high-voltage pulse circuits when generating high-frequency pulses, and to provide an IGBT-based dual H-bridge high-frequency pulse circuit.

[0005] The IGBT-based dual H-bridge high-frequency pulse circuit of the present invention includes a rectifier module, a dual H-bridge high-frequency, high-voltage pulse module, and a protection module; the dual H-bridge high-frequency, high-voltage pulse module includes two parallel H-bridge circuits; one side of the rectifier module is connected to a high-voltage AC power supply, and the other side is connected to the dual H-bridge high-frequency, high-voltage pulse module; the protection module is connected to the dual H-bridge high-frequency, high-voltage pulse module.

[0006] Optionally, the rectifier module includes a rectifier, an electrolytic capacitor and a bleeder resistor, one side of the rectifier is connected to a high-voltage AC power supply, and the other side is connected to the dual H-bridge high-frequency and high-voltage pulse module, and the electrolytic capacitor and the bleeder resistor are both connected in parallel with the dual H-bridge high-frequency and high-voltage pulse module.

[0007] Optionally, the capacitance value of the electrolytic capacitor is 470 μF.

[0008] Optionally, the resistance of the discharge resistor is 1 MΩ.

[0009] Optionally, the protection module includes eight diodes and two K-type filters; the eight diodes are respectively connected in reverse parallel to the eight IGBTs of the dual H-bridge high-frequency and high-voltage pulse module; and the two K-type filters are respectively connected to the output ends of the two H-bridge circuits.

[0010] The present invention can obtain stable high-frequency and high-voltage pulses through the dual H-bridge structure design, specifically including: it can realize instantaneous changes in voltage and current to maintain circuit stability; it can obtain high-frequency and high-voltage pulses above 10KV and 100KHz; modular design, simple structure and easy installation. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 1 is a schematic structural diagram of an IGBT-based dual H-bridge high-frequency pulse circuit according to an embodiment of the present application;

[0012] Figure 2 Schematic diagram of the structure of a power supply according to an embodiment of the present application. DETAILED DESCRIPTION

[0013] The following describes the embodiments of the present invention through specific examples. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments. The details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the following embodiments and features in the embodiments can be combined with each other unless they conflict.

[0014] As used herein, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context indicates otherwise. It should be further understood that the terms "comprise", "include" indicate the presence of the described features, operations, elements, components, items, kinds, and / or groups, but do not exclude the presence, occurrence, or addition of one or more other features, operations, elements, components, items, kinds, and / or groups. The terms "or" and "and / or" used herein are interpreted as inclusive, or mean any one or any combination. Thus, "A, B, or C" or "A, B, and / or C" means "any of the following: A; B; C; A and B; A and C; B and C; A, B, and C". Exceptions to this definition occur only when the combination of elements, functions, or operations is inherently mutually exclusive in some way.

[0015] In response to the problem that the existing IGBT high-frequency and high-voltage pulse circuit has reduced circuit reliability when generating excessively high-frequency pulses, the present invention provides an IGBT-based dual H-bridge high-frequency pulse circuit, which can significantly reduce the average loss and thermal stress of a single IGBT tube during the process of achieving rapid switching of high-voltage current to positive and negative voltages. When the pulse frequency is as high as 100kHz, the circuit performance remains stable.

[0016] Figure 1 : is a schematic structural diagram of a dual H-bridge high-frequency pulse circuit based on IGBT according to an embodiment of the present application. Figure 1 As shown, the IGBT-based dual H-bridge high-frequency pulse circuit of the present application embodiment mainly includes a rectifier module, a dual H-bridge high-frequency, high-voltage pulse module, and a protection module. The dual H-bridge high-frequency, high-voltage pulse module includes two parallel H-bridge circuits. One side of the rectifier module is connected to a high-voltage AC power supply, and the other side is connected to the dual H-bridge high-frequency, high-voltage pulse module. The protection module is connected to the dual H-bridge high-frequency, high-voltage pulse module. The rectifier module converts AC voltage into DC voltage, providing a stable voltage environment. The dual H-bridge high-frequency, high-voltage pulse module realizes alternating current and voltage, outputting high-frequency, high-voltage pulses. The protection module protects the IGBT switches in the dual H-bridge high-frequency, high-voltage pulse module, ensuring the sustainability of pulse generation.

[0017] like Figure 1 As shown, the rectifier module includes a rectifier, an electrolytic capacitor and a bleeder resistor.

[0018] The rectifier includes four diodes, with diode D1 and diode D2 connected in series, and diode D3 and diode D4 connected in series. The anode of diode D1 is connected to the anode of diode D3, and the cathode of diode D2 is connected to the cathode of diode D4. The connection point between diodes D1 and D2 is also connected to one end of the high-voltage AC power supply, and the connection point between diodes D3 and D4 is also connected to the other end of the high-voltage AC power supply.

[0019] The electrolytic capacitor U1 adopts a horn type electrolytic capacitor. The electrolytic capacitor U1, the bleeder resistor R1, and the dual H-bridge high-frequency and high-voltage pulse module are connected in parallel to form a parallel branch. The two ends of the parallel branch are also connected to the connection point of the diode D2 and the diode D4, and the connection point of the diode D1 and the diode D3.

[0020] The rectifier rectifies the high-voltage AC voltage to produce a pulsating DC voltage. Considering the transient nature of bus current increases and the fluctuations in switching tube operation, electrolytic capacitor U1 is connected in parallel with the AC input to maintain bus voltage stability and improve the system's power supply quality. Furthermore, for user safety, a bleeder resistor R1 is connected in parallel across electrolytic capacitor U1 to reduce the voltage to a safe level.

[0021] The electrolytic capacitor U1 and the bleeder resistor R1 can effectively absorb ripple current, suppress electromagnetic interference, and maintain the stability of the bus voltage.

[0022] The dual H-bridge high-frequency and high-voltage pulse module mainly includes eight IGBTs, among which IGBT-H1, IGBT-H2, IGBT-L1, and IGBT-L2 form an H-bridge circuit. IGBT-H1 and IGBT-L2 are a group, and IGBT-H2 and IGBT-L1 are a group. The emitter of IGBT-H1 is connected to the collector of IGBT-L1, the emitter of IGBT-H2 is connected to the collector of IGBT-L2, the collector of IGBT-H1 is connected to the collector of IGBT-H2, and the emitter of IGBT-L1 is connected to the emitter of IGBT-L2.

[0023] IGBT-H3, IGBT-H4, IGBT-L3, and IGBT-L4 form another H-bridge circuit. IGBT-H3 and IGBT-L4 are a group, and IGBT-H4 and IGBT-L3 are a group. The emitter of IGBT-H3 is connected to the collector of IGBT-L3, the emitter of IGBT-H4 is connected to the collector of IGBT-L4, the collector of IGBT-H3 is connected to the collector of IGBT-H4, and the emitter of IGBT-L3 is connected to the emitter of IGBT-L4.

[0024] The two H-bridge circuits are connected in parallel, that is, the emitter of IGBT-H1, the emitter of IGBT-H2, the emitter of IGBT-H3 and the emitter of IGBT-H4 are connected, and the connection point is also connected to the positive electrode of electrolytic capacitor U1, the collector of IGBT-L1, the collector of IGBT-L2, the collector of IGBT-L3 and the collector of IGBT-L4 are connected, and the connection point is also connected to the negative electrode of electrolytic capacitor U1.

[0025] The protection module includes eight diodes and two K-type filters.

[0026] The eight diodes are used as freewheeling diodes and are connected in reverse parallel with the eight IGBTs of the dual H-bridge high-frequency and high-voltage pulse module. Figure 1 As shown, the cathode and anode of diode D5 are connected to the collector and emitter of IGBT-H1 respectively, the cathode and anode of diode D6 are connected to the collector and emitter of IGBT-H2 respectively, the cathode and anode of diode D7 are connected to the collector and emitter of IGBT-H3 respectively, the cathode and anode of diode D8 are connected to the collector and emitter of IGBT-H4 respectively, the cathode and anode of diode D9 are connected to the collector and emitter of IGBT-L1 respectively, the cathode and anode of diode D10 are connected to the collector and emitter of IGBT-L2 respectively, the cathode and anode of diode D11 are connected to the collector and emitter of IGBT-L3 respectively, and the cathode and anode of diode D12 are connected to the collector and emitter of IGBT-L4 respectively.

[0027] K-type filter consists of an inductor and a capacitor connected in series. Figure 1 As shown, one end of inductor L1 is connected to the emitter of IGBT-H1, the other end of inductor L1 is connected to one end of capacitor C2, the other end of capacitor C2 is connected to the emitter of IGBT-H2; one end of inductor L2 is connected to one end of capacitor C1 and the emitter of IGBT-H3, and the other end of capacitor C1 is connected to the emitter of IGBT-H4. The connection point 0V-H1 between inductor L1 and capacitor C2, the connection point 0V-H2 between capacitor C2 and IGBT-H2, the other end of inductor L2, 0V-H3, and the connection point 0V-H4 between capacitor C1 and IGBT-H4 serve as the four output ports of the above-mentioned IGBT-based dual H-bridge high-frequency pulse circuit.

[0028] The above protection module can maintain the continuity of current and protect the IGBT switch tube.

[0029] The IGBT-based dual H-bridge high-frequency pulse circuit of the embodiment of the present application can be applied to a power supply to generate high-frequency pulses. Figure 2 Schematic diagram of the structure of the power supply according to the embodiment of the present application. Figure 2 As shown, the power supply primarily consists of a power frequency transformer, a main circuit board, a high-frequency transformer, and a control board. The main circuit board integrates the aforementioned IGBT-based dual H-bridge high-frequency pulse circuit. The main circuit board generates high-voltage current through capacitor discharge, while the control board integrates the IGBT driver circuit, providing the trigger waveform for the switching devices, thereby precisely controlling the capacitor discharge pattern. The power frequency transformer and high-frequency transformer are used to step up voltage at different frequencies, ensuring efficient and stable operation of the power supply. The trigger waveform for each switch can be determined based on actual needs.

[0030] The AC 220V, 50Hz power output is connected to a power-frequency transformer, which converts the input AC voltage to 425V, 50Hz AC. This AC power is then fed into the rectifier module on the main circuit board. The output of the protection module on the main circuit board is connected to a high-frequency transformer, which outputs high-frequency, high-voltage pulses. The main circuit board converts the AC power output of the power-frequency transformer into DC power, processes the DC power, and then boosts the voltage through the high-frequency transformer, ultimately outputting a high-frequency, high-voltage pulse signal.

[0031] Considering the input characteristics of the full-bridge inverter, the power frequency transformer needs to have a certain overload capacity. Therefore, the SG-3KVA single-phase step-up transformer is selected. This transformer is a dry-type power frequency transformer that can achieve complete isolation in the boost working state, further improving the safety of the power supply.

[0032] In the aforementioned rectifier module, 425V AC power is converted to pulsating DC voltage by the rectifier. Taking into account the diode voltage drop (0.7 to 1V), the actual output voltage is 598V. A 470μF electrolytic capacitor is connected in parallel to the input of the dual H-bridge high-frequency, high-voltage pulse module to absorb ripple current, suppress electromagnetic interference, smooth the output voltage, and ensure bus voltage stability. A 1MΩ bleeder resistor is connected in parallel across the filter capacitor. When the device is powered off, the capacitor charge is discharged through the bleeder resistor, ensuring that the voltage drops to a safe level.

[0033] The dual H-bridge high-frequency, high-voltage pulse module's topology is based on the traditional full-bridge topology. By adding two groups (a total of four) of switching transistors, high-frequency switching performance is optimized, enabling it to withstand high voltages exceeding 600V. This design ensures that each group of switching transistors only handles a portion of the operating cycle. After one group is turned on, the other provides freewheeling and suppresses tail current, significantly reducing the average loss and thermal stress of each transistor and improving system reliability. The dual H-bridge high-frequency, high-voltage pulse module uses IGW60T120 IGBTs and an input bus voltage of approximately 600V to achieve high-frequency, high-voltage pulses exceeding 10kV and 100kHz. A high-frequency transformer made of 3C90 material is connected to the output of the dual H-bridge high-frequency, high-voltage pulse module. Specifically, Mn-Zn ferrite is selected as the core material for the high-frequency transformer, and the volt-second method and AP method are used for selection.

[0034] The protection module adopts the design of reverse parallel diodes, and the eight diodes of the protection module serve as freewheeling diodes. During the conduction period of the IGBT, the DC bus voltage is transmitted to the load end through the IGBT, the load current is borne by the IGBT, and the freewheeling diode is in a reverse biased state and does not conduct. When the IGBT is turned off, in order to maintain the continuity of the inductor current, the freewheeling diode is switched from reverse bias to forward conduction, and the load current flows back to the bus through the diode to avoid the sudden interruption of the inductor current due to the IGBT shutdown, thereby preventing high voltage shock. During this period, the freewheeling diode fully bears the load current and remains in the on state until the IGBT is turned on again, at which point the freewheeling diode is turned off. The freewheeling diode of the embodiment of the present application adopts the MUR860G ultra-fast recovery diode, which has extremely low reverse recovery current and fast switching characteristics. It is suitable for high-frequency applications above 50kHz and can effectively reduce energy loss during the commutation process, thereby significantly improving the overall efficiency of the power supply.

[0035] The power supply draws 220V, 50Hz AC power from the mains. This 220V AC power is boosted to 425V, 50Hz by a power-frequency transformer, providing the appropriate voltage for subsequent circuits. The boosted 425V AC power is converted to pulsating DC power by a rectifier module. The rectified DC power then enters a dual H-bridge high-frequency, high-voltage pulse module for processing, providing a stable power source for the high-frequency transformer.

[0036] The DC power output by the main circuit board is boosted by a high-frequency transformer with a transformation ratio of 1:30, and finally outputs a high-frequency, high-voltage pulse signal to drive plasma ignition or other high-voltage applications.

[0037] The IGBT-based dual H-bridge high-frequency pulse circuit of the embodiment of the present application significantly improves the high-frequency performance, reliability and efficiency of the circuit by optimizing the switch tube layout, introducing fast recovery diodes and improving the thermal management design, and can effectively solve problems such as high-frequency switching loss, inductive load current interruption, electromagnetic interference and high voltage and high power requirements.

Claims

1. A dual H-bridge high-frequency pulse circuit based on IGBT, characterized in that: Including rectifier module, dual H-bridge high-frequency high-voltage pulse module and protection module; The dual H-bridge high-frequency and high-voltage pulse module includes two parallel H-bridge circuits; One side of the rectifier module is connected to a high-voltage AC power supply, and the other side is connected to the dual H-bridge high-frequency high-voltage pulse module; The protection module is connected to the dual H-bridge high-frequency and high-voltage pulse module.

2. The IGBT-based dual H-bridge high-frequency pulse circuit according to claim 1, characterized in that: The rectifier module includes a rectifier, an electrolytic capacitor and a bleeder resistor. One side of the rectifier is connected to a high-voltage AC power supply, and the other side is connected to the dual H-bridge high-frequency and high-voltage pulse module. The electrolytic capacitor and the bleeder resistor are both connected in parallel with the dual H-bridge high-frequency and high-voltage pulse module.

3. The IGBT-based dual H-bridge high-frequency pulse circuit according to claim 2, characterized in that: The capacitance value of the electrolytic capacitor is 470 μF.

4. The IGBT-based dual H-bridge high-frequency pulse circuit according to claim 2 or 3, characterized in that: The resistance of the bleeder resistor is 1 MΩ.

5. The IGBT-based dual H-bridge high-frequency pulse circuit according to claim 1, characterized in that: The protection module includes eight diodes and two K-type filters; The eight diodes are respectively connected in reverse parallel to the eight IGBTs of the double H-bridge high-frequency and high-voltage pulse module; The two K-type filters are respectively connected to the output ends of the two H-bridge circuits.

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