Intelligent PVD (Physical Vapor Deposition) control system for magnetron sputtering

Abstract

The invention discloses an intelligent PVD (Physical Vapor Deposition) control system for magnetron sputtering. The intelligent PVD control system for magnetron sputtering comprises a configuration unit, a motion controller unit, a sensor control unit and a production state visual interface. And the configuration unit is used for configuring production parameters and a production flow. The motion controller unit is in communication connection with the configuration unit; and the motion controller unit is used for controlling the working states of a plurality of movable parts of the controlled equipment. The sensor control unit can be connected to the motion controller unit in a communication mode, and the sensor control unit is used for obtaining sensing data of at least one sensor of the controlled device. The production state visualization interface is in communication connection with the motion controller unit; and the production state visual interface is used for displaying the control information of the motion controller unit on the movable part and the sensing data of the sensor.

Description

Technical Field

[0001] The present application relates to the field of magnetron sputtering, and in particular to an intelligent PVD control system for magnetron sputtering. Background Art

[0002] With the continuous development of technology and the expansion of its application areas, the market prospects for magnetron sputtering equipment are broad. In the coming years, the application areas of magnetron sputtering equipment will continue to expand. In the field of new energy, magnetron sputtering technology can be used to prepare devices such as solar cells and fuel cells to improve the energy conversion efficiency and stability of the production process. In the electronics industry, magnetron sputtering equipment can be used to prepare microelectronic devices such as high-density storage devices and sensors to enhance the performance and reliability of electronic devices. In the medical field, magnetron sputtering technology can be used to prepare surface coatings for biomedical materials and medical devices, improving the biocompatibility and corrosion resistance of medical materials or coatings. In the field of environmental protection, magnetron sputtering equipment can be used for the purification of atmospheric pollutants and wastewater treatment, achieving efficient resource utilization and sustainable environmental development.

[0003] At the same time, with domestic companies accelerating product development, driven by both new technologies and industrial policies, China's semiconductor magnetron sputtering system market is poised for growth opportunities. China has made significant progress in technological innovation and industrial upgrading, giving domestic companies a competitive advantage in the R&D and production of magnetron sputtering equipment. Furthermore, increasing government support for new materials, new energy, and environmental protection has created a favorable policy environment for the development of the magnetron sputtering equipment market.

[0004] The principle of magnetron sputtering is that electrons, accelerated by an electric field, collide with argon atoms as they fly toward the substrate, ionizing a large number of argon ions and electrons. The electrons then fly toward the substrate. The argon ions, accelerated by the electric field, bombard the target material, sputtering a large number of target atoms. These neutral target atoms (or molecules) are deposited on the substrate to form a film. During this process, the Lorentz force of the magnetic field significantly influences the trajectory of secondary electrons. As they accelerate toward the substrate, the secondary electrons are confined by the Lorentz force and confined to a plasma region near the target surface. Within this region, the plasma density is very high, and the magnetic field causes the secondary electrons to move in a circular motion around the target surface. This increases the probability of collisions between the secondary electrons and target atoms, improving sputtering efficiency and film quality.

[0005] To achieve precise control of magnetron sputtering equipment, a programmable logic controller (PLC) has traditionally been used to start and stop the equipment and monitor its operating status in real time. The PLC automatically adjusts the operating mode and parameters of the magnetron sputtering equipment based on preset process parameters and temperature requirements, ensuring the quality and performance of the thin film. Operators can also manually adjust various equipment components to ensure proper operation. This combined approach of automation and manual operation effectively improves the production efficiency and stability of magnetron sputtering equipment, meeting diverse process requirements and production demands.

[0006] However, due to the complexity of PLC programming and development, some advanced programming and performance requirements may be limited in constrained environments. PLC systems also present the risk of single points of failure, potentially impacting the entire production system. Furthermore, PLC applications are subject to high costs associated with professional debugging, maintenance, and software updates. Furthermore, PLCs cannot meet the demands of certain applications requiring higher response speed and accuracy.

[0007] Therefore, there is an urgent need to develop a new control method for magnetron sputtering technology. Summary of the Invention

[0008] One advantage of the present application is that it provides an intelligent PVD control system for magnetron sputtering, wherein the intelligent PVD control system for magnetron sputtering realizes control of the controlled equipment through the comprehensive application of motion controller and software, wherein the motion controller can improve the accuracy of equipment control and improve the stability and safety of the production environment, and the data analysis and statistical functions provided by the software can provide strong support for users to optimize the production process and improve production efficiency.

[0009] Another advantage of the present application is that it provides an intelligent PVD control system for magnetron sputtering, wherein the intelligent PVD control system for magnetron sputtering monitors the controlled equipment in real time through software, and displays the production process information of the controlled equipment through a visual interface, so that customers can obtain real-time production process information and take timely measures, such as adjusting production parameters, which is conducive to ensuring the stability and safety of the production environment during the production process.

[0010] Another advantage of the present application is that it provides an intelligent PVD control system for magnetron sputtering, wherein the intelligent PVD control system for magnetron sputtering has data recording and preservation functions, can store historical data, and facilitate data analysis and statistics for users. In this way, users can view production data within a specific time period as needed, such as pressure sensor data and temperature sensor data, and generate corresponding reports and charts through the software. These reports and charts can help users evaluate and optimize the production process, identify potential problems and improve production efficiency. Through the data analysis and statistical functions provided by the software, users can better understand the operation of the equipment, optimize production parameters, and improve production quality and efficiency.

[0011] Another advantage of the present application is that it provides an intelligent PVD control system for magnetron sputtering, wherein the intelligent PVD control system for magnetron sputtering has powerful data acquisition, processing, display and storage functions, which can provide users with a good human-computer interaction experience.

[0012] Another advantage of the present application is that it provides an intelligent PVD control system for magnetron sputtering, wherein, compared with the traditional PLC system, the intelligent PVD control system for magnetron sputtering can automatically control and monitor the equipment, thereby improving the working efficiency and production speed of the equipment; it can also run on computers with different operating systems, so that operators have a good interactive experience and reduce the learning cost of operators; it can also accurately control and monitor the equipment, improve the accuracy and stability of the equipment, and support the implementation of more complex algorithms; it can also visualize data and equipment status through a graphical interface, so that users can easily and intuitively understand the operation status of the equipment; it can also support users to achieve remote control and monitoring through the network, making it convenient for users to operate and manage the equipment anytime and anywhere.

[0013] According to one aspect of the present application, there is provided an intelligent PVD control system for magnetron sputtering, adapted to be communicatively connected to a controlled device, comprising: A configuration unit, configured to configure production parameters and production processes; A motion controller unit, the motion controller unit being communicatively connected to the configuration unit; the motion controller unit being used to control the working states of multiple movable components of the controlled device; a sensor control unit, the sensor control unit being communicatively connected to the motion controller unit and configured to acquire sensing data of at least one sensor of the controlled device; A production status visualization interface is communicatively connected to the motion controller unit; the production status visualization interface is used to display the control information of the motion controller unit on the movable component and the sensor data of the sensor.

[0014] In one embodiment of the intelligent PVD control system for magnetron sputtering described in the present application, the configuration unit includes a configuration database and a configuration interface, the configuration database is used to store production parameters and production processes, the configuration interface is connected to the configuration database, and the configuration interface is used to display production parameters and production processes.

[0015] In one embodiment of the intelligent PVD control system for magnetron sputtering described in the present application, the production parameters include but are not limited to pumping time, upper and lower pressure limits, and upper and lower temperature limits.

[0016] In one embodiment of the intelligent PVD control system for magnetron sputtering described in the present application, the motion controller unit is also used to start the corresponding controller based on the production process of the configuration unit to control the working state of the movable parts of the controlled device.

[0017] In one embodiment of the intelligent PVD control system for magnetron sputtering according to the present application, the motion controller unit includes an exhaust valve control module, and the exhaust valve control module is used to control the working state of the exhaust valve of the controlled device.

[0018] In one embodiment of the intelligent PVD control system for magnetron sputtering described in the present application, the motion controller unit also includes a gas relief valve control module, which is used to control the working state of the gas relief valve of the controlled device and the state feedback of its corresponding sensor.

[0019] In one embodiment of the intelligent PVD control system for magnetron sputtering according to the present application, the sensor data includes pressure sensor data and temperature sensor data.

[0020] In one embodiment of the intelligent PVD control system for magnetron sputtering described in the present application, the sensor control unit is also used to determine whether a specific cavity of the controlled device has reached a preset air pressure value based on the received pressure sensing data of the controlled device and the upper and lower pressure limits in the production parameters configured by the configuration unit. The sensor control unit is also used to determine whether the temperature of the controlled device has reached an expected temperature based on the received temperature sensing data of the controlled device and the upper and lower temperature limits in the production parameters configured by the configuration unit.

[0021] In one embodiment of the intelligent PVD control system for magnetron sputtering described in the present application, the motion controller unit also includes a baffle valve control module and / or a flap valve control module, the baffle valve control module is used to control the working state of the baffle valve of the controlled device, and the flap valve control module is used to control the working state of the flap valve of the controlled device.

[0022] In one embodiment of the intelligent PVD control system for magnetron sputtering according to the present application, the intelligent PVD control system for magnetron sputtering further includes a log recording unit; the log recording unit is used to record the production process information of the controlled equipment in real time.

[0023] Further objectives and advantages of the present application will be fully reflected through understanding of the following description and drawings.

[0024] These and other objects, features and advantages of the present application are fully reflected in the following detailed description, drawings and claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] The above and other purposes, features, and advantages of the present application will become more apparent through a more detailed description of the embodiments of the present application in conjunction with the accompanying drawings. The accompanying drawings are intended to provide a further understanding of the embodiments of the present application and constitute a part of the specification. Together with the embodiments of the present application, they are used to explain the present application and do not constitute a limitation of the present application. In the drawings, the same reference numerals generally represent the same components or steps.

[0026] Figure 1 The figure shows a schematic flow chart of controlling film coating by an intelligent PVD control system for magnetron sputtering according to an embodiment of the present application.

[0027] Figure 2 The figure shows a schematic block diagram of an intelligent PVD control system for magnetron sputtering according to an embodiment of the present application. DETAILED DESCRIPTION

[0028] Below, the exemplary embodiments according to the present application will be described in detail with reference to the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application, and it should be understood that the present application is not limited to the exemplary embodiments described herein.

[0029] It is understood that the term "a" should be understood as "at least one" or "one or more", that is, in one embodiment, the number of an element may be one, while in another embodiment, the number of the element may be multiple, and the term "a" should not be understood as limiting the number. "Multiple" means greater than or equal to two.

[0030] Although ordinal numbers such as "first," "second," and the like will be used to describe various components, these are not intended to limit those components. The terms are used solely to distinguish one component from another. For example, a first component could be referred to as a second component, and similarly, a second component could be referred to as a first component without departing from the teachings of the present disclosure. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0031] The terms used herein are for the purpose of describing various embodiments only and are not intended to be limiting. As used herein, the singular is intended to include the plural, unless the context clearly indicates otherwise. It will also be understood that the terms "comprising" and / or "having" when used in this specification specify the presence of a stated feature, number, step, operation, component, element, or combination thereof, and do not preclude the presence or addition of one or more other features, numbers, steps, operations, components, elements, or groups thereof.

[0032] Application Overview: As previously mentioned, PLC programming and development are complex, often limiting advanced programming and performance requirements within a restricted environment. PLC systems also present the risk of single points of failure, potentially impacting the entire production system. Furthermore, PLC applications pose high costs for professional debugging, maintenance, and software updates. Furthermore, PLCs cannot meet certain requirements for higher response speeds and accuracy.

[0033] Therefore, there is an urgent need to develop a new control method for magnetron sputtering technology.

[0034] The inventors of this application propose using a combination of motion controllers and software to control magnetron technology and apply it to the physical vapor deposition (PVD) production process. Specifically, the motion controller controls multiple movable components of the controlled device, such as pressure relief valves, exhaust valves, baffle valves, and flap valves, enabling precise control and adjustment of the movable components of the controlled device. The software acquires temperature and pressure sensor data in real time, thereby monitoring and controlling the status of the controlled device, such as internal pressure and temperature, and thus enabling monitoring and control of production process information.

[0035] Based on this, the present application proposes an intelligent PVD control system for magnetron sputtering, which includes: a configuration unit, a motion controller unit, a sensor control unit, and a production status visualization interface. The configuration unit is used to configure production parameters and production processes; the motion controller unit is communicatively connected to the configuration unit; the motion controller unit is used to control the working status of multiple movable components of the controlled device; the sensor control unit is communicatively connected to the motion controller unit, and the sensor control unit is used to obtain sensor data from at least one sensor of the controlled device; the production status visualization interface is communicatively connected to the motion controller unit; and the production status visualization interface is used to display the control information of the movable components by the motion controller unit and the sensor data of the sensors.

[0036] Schematic diagram of intelligent PVD control system for magnetron sputtering: Figure 1 and Figure 2 As shown, an intelligent PVD control system for magnetron sputtering according to an embodiment of the present application is illustrated. Magnetron sputtering is a technique in which ions are accelerated under the action of an electric field to bombard a target material, sputtering a large number of target atoms. Magnetron sputtering coating technology features high sputtering rates, low substrate deposition temperatures, and high-quality thin films. However, it suffers from a series of issues, such as low target material utilization and poor magnetic field uniformity. Therefore, it is necessary to optimize the magnetic field distribution of the magnetron sputtering target, with optimized design of the magnetron sputtering target being the most critical. Physical vapor deposition (PVD) technology refers to the use of physical methods to vaporize a material source into gaseous atoms, molecules, or partially ionize them into ions under vacuum conditions, and then deposit a thin film with a specific function on the substrate surface via a low-pressure gas (or plasma). Magnetron sputtering is a type of PVD technology. The intelligent PVD control system for magnetron sputtering provides a control solution for magnetron sputtering-type PVD. Accordingly, the intelligent PVD control system for magnetron sputtering is suitable for being communicatively connected to a controlled device, wherein the controlled device, for example, an atomic layer deposition coating device, uses magnetron sputtering-type physical vapor deposition technology to coat a substrate.

[0037] The controlled equipment is equipped with multiple movable components, such as exhaust valves, air release valves, flap valves, and baffle valves; multiple sensors, such as temperature sensors and pressure sensors; and heaters. The intelligent PVD control system for magnetron sputtering can control production processes and conditions by controlling the multiple movable components and heaters of the controlled equipment.

[0038] The following describes the structure and functions of a specific controlled device using a specific controlled device. It should be understood that the specific structure of the controlled device is not limited to the example described below in this application. Other controlled devices may also be equipped with valve components such as exhaust valves, exhaust valves, flap valves, and baffle valves, sensors such as temperature sensors and pressure sensors, and heating components.

[0039] The controlled equipment is provided with process chambers such as an inlet chamber, an inlet buffer chamber, an inlet transmission chamber, a sputtering chamber, an outlet transmission chamber, an outlet buffer chamber, and an outlet chamber. The sputtering chamber is used to complete vacuum sputtering coating.

[0040] Optionally, the controlled device is further provided with a transport device for transporting the substrates to each process chamber.

[0041] The controlled device is further provided with at least one exhaust device, a sputtering baffle, an exhaust valve, an air release valve, a flap valve and a baffle valve.

[0042] The exhaust device is connected to a specific process chamber, for example, the inlet chamber, the inlet buffer chamber, the inlet transfer chamber, the sputtering chamber, the outlet transfer chamber, and the outlet buffer chamber.

[0043] The sputtering baffle is arranged in the sputtering cavity and is used to prevent the sputtering material from sputtering onto the inner wall of the sputtering cavity.

[0044] The exhaust valve is disposed between the exhaust device and the process chamber and is used to control the exhaust process. When the exhaust valve is open, the exhaust device can exhaust the process chamber to a specific pressure, such as a vacuum state. When the exhaust valve is closed, the exhaust device stops exhausting the process chamber.

[0045] The gas relief valve is provided in a specific process chamber and is used to release air from the process chamber, for example, the outlet chamber. When the gas relief valve is in an open state, the process chamber is released. When the gas relief valve is in a closed state, the process chamber stops being released.

[0046] The flap valve is disposed between each process chamber to isolate each process chamber from the atmosphere or from other process chambers. When the flap valve is open, the process chamber is connected to the atmosphere or to an adjacent process chamber. When the flap valve is closed, the process chamber is isolated from the atmosphere or from adjacent process chambers.

[0047] The baffle valve is mainly used to protect the vacuum pump and isolate the process gas.

[0048] The controlled device is further provided with an air inlet channel and an air inlet valve. The air inlet channel is connected to the sputtering chamber and is used to introduce reaction gas into the sputtering chamber. The air inlet valve is connected to the air inlet channel and is used to control the air inlet. When the air inlet valve is in an open state, the air inlet channel is connected to the sputtering chamber, allowing reaction gas to enter the sputtering chamber. When the air inlet valve is in a closed state, the air inlet channel is not connected to the sputtering chamber, preventing reaction gas from entering the sputtering chamber.

[0049] The controlled device is also equipped with a pressure sensor and a temperature sensor, wherein the pressure sensor is used to measure the air pressure in the process chamber, and the temperature sensor is used to measure the temperature in the process chamber. The inlet buffer chamber, the inlet transfer chamber, the sputtering chamber, and the outlet transfer chamber are all equipped with heating devices.

[0050] In the process of coating the substrate using magnetron sputtering physical vapor deposition technology, such as Figure 1 As shown, first, the substrate is placed in the controlled device; then, the exhaust valve is opened to exhaust the specific process chamber; the temperature of the process chamber is controlled to a set temperature; then, the reaction gas is introduced into the process chamber; then, the working current and the substrate temperature are controlled to meet the magnetron sputtering conditions; subsequently, the pressure relief valve is controlled to open to relieve pressure, and finally, the magnetron sputtered substrate is taken out.

[0051] In the process of placing the substrate into the controlled device, the substrate is first fed into the inlet cavity, and then fed into the inlet buffer chamber and the sputtering chamber in sequence. When the substrate is fed into the inlet cavity, the inlet buffer chamber and the sputtering chamber, the air pressure in the inlet cavity, the inlet buffer chamber and the sputtering chamber should be adjusted to the corresponding pressure value, for example, it is evacuated to a vacuum through an exhaust device; the temperature of the inlet cavity, the inlet buffer chamber and the sputtering chamber is adjusted to the corresponding temperature value. Temperature control can affect the sputtering rate, the composition and structure of the sputtered material, thereby regulating the properties of the deposited film. High temperature can also increase the diffusion rate of the sputtered material, making it easier to deposit on the substrate. Heating the cavity to the set temperature can accelerate the diffusion and reaction of gas molecules, help remove pollutants and reduce the occurrence of gas reactions, thereby improving the purity and quality of the film.

[0052] After the substrate is fed into the sputtering chamber, reactive gas is introduced into the sputtering chamber, and the electrodes in the sputtering chamber are energized, and the current and substrate temperature are controlled. The introduction of reactive gas can regulate the chemical composition of the film to achieve specific functions or properties, such as improving the conductivity, optical properties, mechanical properties, etc. of the film; by adjusting the pressure and composition of the reactive gas, the stress and adhesion of the sputtered film can be effectively controlled to meet different application requirements. By adjusting the current, the energy of the ions and the intensity of the bombardment on the substrate surface can be controlled. By controlling the temperature of the substrate, the crystal structure, grain size, grain boundary density, etc. of the film can be adjusted. In this process, films with different requirements can be produced on the substrate.

[0053] It is worth mentioning that in the process of sputtering coating, film thickness, coating speed, etc. are important parameters that need to be controlled. The following are optional methods for real-time monitoring of film thickness: 1. Volatilization method: Film thickness is measured using a quartz crystal microbalance (QCM). A quartz crystal is placed on a deposition apparatus. As the film is deposited on the crystal, its vibration frequency changes. By measuring this frequency change, the change in film mass can be calculated, allowing real-time monitoring of film thickness.

[0054] 2. Inductively coupled plasma optical emission spectrometry (ICP-OES): Inductively coupled plasma optical emission spectrometry (ICP-OES) monitors the emission spectra of elements in the plasma generated during the sputtering process. By analyzing the emission spectra intensity and relative concentrations of different elements, the composition and thickness of the film can be inferred.

[0055] 3. Ellipsometry: Ellipsometry is used to measure the refractive index and extinction coefficient of the film, thereby calculating the film thickness. By analyzing the data measured by the ellipsometer in real time, the real-time changes in film thickness can be obtained.

[0056] 4. Reflectometry: Reflectometry measures the reflectivity of thin films. By measuring the intensity and phase of the reflected light, the thickness of the film can be determined. This method is often used to monitor transparent films.

[0057] It is important to note that different monitoring methods are suitable for different film materials and thickness ranges. In practical applications, multiple methods are often combined for real-time monitoring of film thickness to improve accuracy and reliability.

[0058] In the embodiment of the present application, automatic film thickness detection and control can be performed according to the set film thickness. Specifically, automatic film thickness detection and control can be achieved by the following methods: 1. Film Thickness Monitoring: An appropriate film thickness monitoring system, such as a probe or optical interferometer, is established to monitor film thickness in real time. These devices can feed the measurement results back to the intelligent PVD control system used for magnetron sputtering. By comparing the results with the target film thickness, the magnetron sputtering parameters are automatically adjusted based on the feedback signal to control sputtering time and power.

[0059] 2. Preset Time: Through experimentation or experience, determine the relationship and ratio between sputtering time and film thickness based on parameters such as the target material, target material, and desired film thickness. Based on the target film thickness, the desired sputtering time is pre-set in the intelligent PVD control system for magnetron sputtering to achieve automated control. Sputtering automatically stops when the preset sputtering time is reached.

[0060] 3. Develop a control algorithm: This algorithm enables real-time control and feedback based on the target film thickness and real-time monitored film thickness data. The algorithm automatically adjusts sputtering time and power based on actual monitoring data to achieve the set film thickness, i.e., the target film thickness.

[0061] 4. Adding automatic control components: Connecting automatic control components (such as programmable controllers or robotic operating systems) to the magnetron sputtering equipment enables signal transmission and automated operation. By setting appropriate programs and parameters, the coating process can be automated to the desired film thickness.

[0062] In actual operation, debugging and optimization are required according to specific equipment and process conditions to ensure the accuracy and stability of automated coating. In addition, the monitoring system needs to be continuously monitored and calibrated to ensure that the obtained film thickness is consistent with the set value.

[0063] The following are optional methods for real-time monitoring of film formation speed: 1. Controllability is a major factor influencing sputtering rate. By adjusting the power applied to the target, the intensity and rate of sputtering can be controlled. Generally, higher power results in higher sputtering rates. In practice, the desired stable film deposition rate can be achieved by adjusting the sputtering power.

[0064] 2. Optimize gas flow: Sputtering often requires the use of inert gases, such as argon, to maintain a high vacuum environment and form the ion beam. Optimizing gas flow can help control the energy and flow of the ion beam, thereby achieving a stable film deposition rate. Excessively high or low gas flow rates can cause fluctuations in the deposition rate, so careful adjustment is necessary.

[0065] 3. Control the preparation and condition of the target surface: The surface condition of the target has a significant impact on the film formation rate and quality during the sputtering process. Ensuring a flat and clean target surface, and performing regular surface cleaning and polishing, can help achieve a more stable film formation rate.

[0066] 4. Use a feedback control system: A feedback control system monitors sputtering process parameters such as sputtering power, gas flow rate, and film deposition rate in real time, and adjusts control parameters based on the monitoring results. This approach allows for more precise control and ensures a stable film deposition rate.

[0067] 5. Rationally design the magnetic field structure: The magnetic field structure in magnetron sputtering has a significant impact on the focusing and dispersion of the ion beam during the sputtering process. By properly designing the magnetic field structure, the ion beam can have stable energy and mobility, thereby achieving a stable film deposition rate.

[0068] It should be noted that achieving a stable film deposition rate requires experience and continuous optimization. In actual operation, other adaptive control measures may be performed based on specific materials and experimental conditions.

[0069] After the substrate is vacuum sputter-coated, the vacuum sputter-coated substrate can be sequentially introduced into the outlet buffer chamber and the outlet chamber. As the substrate is introduced into the outlet buffer chamber and the outlet chamber, the pressures in the outlet buffer chamber and the outlet chamber should be adjusted to corresponding pressure values; and the temperatures in the outlet buffer chamber and the outlet chamber should be adjusted to corresponding temperature values. As the substrate is introduced into the outlet chamber, the outlet chamber can be deflated by opening a pressure relief valve until the pressure in the outlet chamber reaches atmospheric pressure.

[0070] The intelligent PVD control system for magnetron sputtering realizes control of the controlled equipment through the integrated application of motion controller and software. The motion controller can improve the accuracy of equipment control and enhance the stability and safety of the production environment. The data analysis and statistical functions provided by the software can provide strong support for users to optimize the production process and improve production efficiency.

[0071] Specifically, if Figure 2As shown, the intelligent PVD control system for magnetron sputtering includes a configuration unit, a motion controller unit, a sensor control unit, and a production status visualization interface. The configuration unit is used to configure production parameters and production processes. The motion controller unit is communicatively connected to the configuration unit. The motion controller unit is used to control the working status of multiple movable parts of the controlled device. The sensor control unit is communicatively connected to the motion controller unit, and the sensor control unit is used to obtain sensor data from at least one sensor of the controlled device. The production status visualization interface is communicatively connected to the motion controller unit. The production status visualization interface is used to display the control information of the movable parts by the motion controller unit and the sensor data of the sensors.

[0072] Specifically, in an embodiment of the present application, the configuration unit includes a configuration database and a configuration interface. The configuration database is used to store production parameters and production processes. It is worth mentioning that, optionally, the entire production preparation process can be controlled by the intelligent PVD control system for magnetron sputtering, that is, the process from the substrate being placed in the controlled device to the substrate being taken out; the intelligent PVD control system for magnetron sputtering can also be used to control only the vacuum sputtering coating process, that is, the process of the substrate being fed into the sputtering chamber and completing the vacuum sputtering coating. Accordingly, the production process in the configuration database can be the entire production preparation process, or the vacuum sputtering coating process, or it can include both the entire production preparation process and the vacuum sputtering coating process; users can choose to control the entire production preparation process by the intelligent PVD control system for magnetron sputtering or to control only the vacuum sputtering coating process by the intelligent PVD control system for magnetron sputtering.

[0073] It should be understood that by controlling the production process and the production parameters in the production process, a variety of different coatings can be formed on the substrate to meet actual needs. The configuration interface is connected to the configuration database, and the configuration interface is used to display the production parameters and the production process.

[0074] The production parameters include pumping time, upper and lower pressure limits, and upper and lower temperature limits. When the entire production and preparation process is controlled by the intelligent PVD control system for magnetron sputtering, the pumping time includes the pumping time for the inlet cavity, the pumping time for the inlet buffer cavity, the pumping time for the inlet transfer cavity, the pumping time for the sputtering cavity, the pumping time for the outlet transfer cavity, and the pumping time for the outlet buffer cavity; the upper and lower pressure limits include the upper and lower pressure limits of the inlet cavity, the upper and lower pressure limits of the inlet buffer cavity, the upper and lower pressure limits of the inlet transfer cavity, the upper and lower pressure limits of the sputtering cavity, the upper and lower pressure limits of the outlet transfer cavity, and the upper and lower pressure limits of the outlet buffer cavity; the upper and lower temperature limits include the upper and lower temperature limits of the inlet buffer cavity, the upper and lower temperature limits of the inlet transfer cavity, the upper and lower temperature limits of the sputtering cavity, the upper and lower temperature limits of the outlet transfer cavity, and the upper and lower temperature limits of the substrate. When only the vacuum sputtering coating process is controlled by the intelligent PVD control system for magnetron sputtering, the pumping time includes the pumping time of the sputtering chamber; the upper and lower pressure limits include the upper and lower limits of the air pressure of the sputtering chamber; and the upper and lower temperature limits include the upper and lower limits of the temperature of the sputtering chamber.

[0075] Optionally, the configuration interface includes at least one operable portion. The operable portion allows a user to set production processes and / or production parameters. In this way, the intelligent PVD control system for magnetron sputtering can interact with the user, providing the user with a good human-computer interaction experience.

[0076] As previously mentioned, the motion controller unit is used to control the operating states of multiple movable components of a controlled device. The motion controller unit can be connected to the controlled device via a 485 communication interface or other interface. The controlled device can receive and read control instructions from the motion controller unit, and execute the control instructions from the motion controller unit to implement an automated production process.

[0077] The movable parts of the controlled equipment include a pressure relief valve, an air extraction valve, a baffle valve, a flap valve, an air inlet valve, etc.

[0078] In some embodiments of the present application, the motion controller unit is further configured to start a corresponding controller based on a production process of the configuration unit to thereby control the working state of the movable component of the controlled device.

[0079] The motion controller unit includes an exhaust valve control module. The exhaust valve control module is used to control the working state of the exhaust valve of the controlled device, thereby adjusting the pressure value in a specific process chamber. For example, when the intelligent PVD control system for magnetron sputtering determines that the substrate is sequentially fed into the inlet cavity, the inlet buffer cavity, the inlet transfer cavity, the sputtering cavity, the outlet transfer cavity, and the outlet buffer cavity, the exhaust valve control module controls the exhaust valve of the controlled device connected to the inlet cavity to be in an open state, the exhaust valve connected to the inlet buffer cavity to be in an open state, the exhaust valve connected to the sputtering cavity to be in an open state, the exhaust valve connected to the outlet transfer cavity to be in an open state, and the exhaust valve connected to the outlet buffer cavity to be in an open state, so that the air pressure of the inlet cavity, the air pressure of the inlet buffer cavity, the air pressure of the inlet transfer cavity, the air pressure of the sputtering cavity, the air pressure of the outlet transfer cavity, and the air pressure of the outlet buffer cavity respectively reach a preset air pressure value, which is lower than the atmospheric pressure. When the air pressure in the process chamber has not decreased to the preset air pressure value, the air extraction valve control module controls the air extraction valve to continue to extract air from the process chamber until the air pressure in the process chamber reaches the preset air pressure value.

[0080] Optionally, the motion controller unit further includes a flap valve control module. The flap valve control module is configured to control the operating state of the flap valve of the controlled device. For example, upon determining that the substrate has entered the inlet buffer chamber from the inlet cavity, the flap valve control module controls the flap valve between the inlet cavity and the inlet buffer chamber to prevent the air pressure between the inlet cavity and the inlet buffer chamber from interfering with each other.

[0081] Optionally, the motion controller unit further includes an air inlet valve controller. The air inlet valve controller is configured to control the operating state of an air inlet valve of the controlled device. For example, when the intelligent PVD control system for magnetron sputtering determines that the substrate has been introduced into the sputtering chamber, the air inlet valve controller controls the air inlet valve to be in an open state, allowing the reaction gas to enter the sputtering chamber.

[0082] Optionally, the motion controller unit further includes a flapper valve control module, and the flapper valve control module is used to control the working state of the flapper valve.

[0083] Optionally, the motion controller unit further includes a relief valve control module. The relief valve control module is configured to control the operating state of the relief valve of the controlled device, thereby adjusting the pressure within a specific process chamber. For example, when the intelligent PVD control system for magnetron sputtering determines that the substrate has been delivered to the outlet cavity, the relief valve control module controls the pressure relief valve to remain open until the pressure in the outlet cavity reaches atmospheric pressure.

[0084] Optionally, the motion controller unit further includes a transport device controller, wherein the transport device controller is configured to control the transport device to transfer the substrate, so that the transport device transfers the substrate to each process chamber.

[0085] As previously mentioned, the sensor control unit includes sensor data from at least one sensor of the controlled device. The sensor data includes pressure sensor data and temperature sensor data. The pressure sensor data includes the air pressure of the inlet cavity, the air pressure of the inlet buffer cavity, the air pressure of the inlet transfer cavity, the air pressure of the sputtering cavity, the air pressure of the outlet transfer cavity, and the air pressure of the outlet buffer cavity.

[0086] In some embodiments of the present application, the sensor control unit is further configured to determine whether a specific cavity of the controlled device has reached a preset pressure value based on the received pressure sensor data of the controlled device and the upper and lower pressure limits in the production parameters configured by the configuration unit. The sensor control unit is further configured to determine whether the temperature of the controlled device has reached an expected temperature based on the received temperature sensor data of the controlled device and the upper and lower temperature limits in the production parameters configured by the configuration unit. When the temperature in the process chamber or the temperature of the substrate does not increase to the desired temperature, the intelligent PVD control system for magnetron sputtering controls the heater to continue heating the process chamber until the temperature in the process chamber or the temperature of the substrate reaches the desired temperature.

[0087] As previously mentioned, the production status visualization interface is used to display the control information of the motion controller unit on the movable component and the sensor data of the sensor. The control information of the motion controller unit on the movable component includes the control status of the exhaust valve by the exhaust valve control module. For example, the control status of the exhaust valve by the exhaust valve control module is displayed as open, that is, the exhaust valve control module controls the exhaust valve to open.

[0088] Optionally, the control information of the motion controller unit on the movable part also includes the control status of the intake valve by the intake valve controller, and / or the control status of the exhaust valve by the exhaust valve control module, and / or the control status of the exhaust valve by the baffle valve control module, and / or the control status of the baffle valve by the flap valve control module, and / or the control status of the flap valve by the flap valve control module, and / or the control status of the transmission equipment controller on the transmission equipment.

[0089] The sensing data of the sensor includes the air pressure data measured by the motion controller unit on the pressure sensor, for example, the air pressure data measured by the pressure sensor arranged in the inlet cavity, the air pressure data measured by the pressure sensor arranged in the inlet buffer cavity, the air pressure data measured by the pressure sensor arranged in the inlet transfer cavity, the air pressure data measured by the pressure sensor arranged in the sputtering cavity, the air pressure data measured by the pressure sensor arranged in the outlet transfer cavity, and the air pressure data measured by the pressure sensor arranged in the outlet buffer cavity.

[0090] The sensing data of the sensor also includes temperature data measured by a temperature sensor, for example, temperature data measured by a temperature sensor arranged in the inlet buffer chamber, temperature data measured by a temperature sensor arranged in the inlet transfer chamber, and temperature data measured by a temperature sensor arranged in the sputtering chamber and the outlet transfer chamber.

[0091] The intelligent PVD control system for magnetron sputtering uses software to monitor the controlled equipment in real time and displays the production process information of the controlled equipment through a visual interface, allowing customers to obtain real-time production process information and take timely measures, such as adjusting production parameters, which is conducive to ensuring the stability and safety of the production environment during the production process.

[0092] The intelligent PVD control system for magnetron sputtering has the function of monitoring and providing feedback on equipment anomalies. Specifically, the intelligent PVD control system for magnetron sputtering uses multiple threads to monitor equipment status, such as IO signals and analog feedback. The intelligent PVD control system for magnetron sputtering can implement upper and lower limit alarms for key parameters, such as chamber pressure and inlet and outlet airflow, as well as emergency processing of asynchronous backend functions, such as emergency braking and immediate closing of gate valves, thereby protecting critical equipment hardware. At the same time, red text reminders are displayed on the monitoring page.

[0093] More specifically, the intelligent PVD control system for magnetron sputtering can monitor and provide feedback on equipment anomalies in the following ways: 1. Equipment operating parameter monitoring: By monitoring the operating parameters of the magnetron sputtering equipment, such as sputtering rate, deposition thickness, gas flow rate, and target material consumption, abnormalities can be detected in a timely manner. If any abnormality is found, adjustments should be made immediately to ensure normal operation of the equipment.

[0094] 2. Equipment status monitoring: Regularly check the status of each component of the equipment, such as the cathode, target material, gas supply system, etc. Observe whether each component is damaged, worn, or malfunctioning, and replace or repair it in a timely manner.

[0095] 3. Vacuum monitoring: Magnetron sputtering equipment must operate in a high vacuum environment, so vacuum monitoring is crucial. Real-time vacuum monitoring can reveal abnormalities such as leaks in the vacuum system and reduced pumping efficiency.

[0096] 4. Cooling System Monitoring: The cooling system in the magnetron sputtering equipment is used to maintain the equipment operating within a suitable temperature range. Monitor the cooling system's operating status to ensure proper operation and prevent equipment damage from overheating.

[0097] 5. Safety precautions: During the operation of the magnetron sputtering equipment, the safety of the experimenters must be ensured. In the event of abnormal conditions, such as equipment failure or gas leakage, safety precautions must be taken immediately, including stopping the experiment and evacuating personnel.

[0098] 6. Data Collection and Analysis: Collect and analyze various data during equipment operation, such as deposition rate and film properties. Data analysis can identify potential abnormal trends, allowing for timely adjustments and resolution.

[0099] 7. Regular maintenance: To ensure the stable operation of the magnetron sputtering equipment, regular maintenance should be performed, including cleaning, lubrication, and inspection of the electrical system. Preventive maintenance can effectively reduce the equipment failure rate and ensure the smooth progress of the experiment.

[0100] 8. Establish an emergency plan: Develop an emergency plan for possible abnormal situations. When problems occur, the experimenter should follow the emergency plan to ensure the safety of the equipment and the smooth progress of the experiment.

[0101] Through the above measures, the operating status of the magnetron sputtering equipment can be effectively monitored, and abnormal situations can be fed back in time to ensure the normal operation of the equipment and the smooth progress of the experiment.

[0102] The intelligent PVD control system for magnetron sputtering can also further optimize and improve process speed and film quality through autonomous learning. Specifically, it collects process parameters and output parameters for each process, trains a model using a neural network algorithm, and performs multiple model trainings, allowing the equipment to autonomously learn and automatically adjust to the optimal production parameters.

[0103] More specifically, autonomous learning can be achieved through the following methods to further optimize and improve process speed and film quality: 1. Sensors and Monitoring Systems: Various sensors are installed to monitor process parameters, such as sputtering power, gas pressure, and substrate temperature. Leveraging this data, a real-time monitoring system is established. Using self-learning algorithms to analyze the data, process parameters are optimized to improve production efficiency and film quality.

[0104] 2. Machine Vision: Machine vision technology is used to monitor the uniformity and quality of thin films. Image processing algorithms can detect surface defects or unevenness in real time, and feedback control systems can be used to make adjustments to improve film quality.

[0105] 3. Intelligent control system: Introducing an intelligent control system that uses advanced control algorithms, such as fuzzy control or neural network control, allows the magnetron sputtering system to autonomously learn and optimize. Such a system can adaptively adjust to real-time process and environmental conditions, improving production efficiency.

[0106] 4. Data Analysis and Model Building: Utilize big data analysis techniques to collect and analyze historical process data. Build predictive models to predict possible future process changes and implement optimization measures in advance to ensure stable film quality.

[0107] 5. Remote Monitoring and Operation: Connecting the magnetron sputtering system to a cloud platform enables remote monitoring and operation. Remote monitoring provides access to equipment status and production data at any time, enabling remote optimization and adjustment to improve process efficiency.

[0108] Through the comprehensive application of the above methods, the magnetron sputtering system can be equipped with the ability of autonomous learning and optimization, thereby improving the process speed and film quality.

[0109] The intelligent PVD control system for magnetron sputtering features data recording and storage capabilities, enabling users to store historical data and facilitate data analysis and statistics. This allows users to view production data for a specific time period, such as pressure and temperature sensor data, and generate corresponding reports and charts through the software. These reports and charts help users evaluate and optimize production processes, identify potential problems, and improve production efficiency. The data analysis and statistical functions provided by the software enable users to better understand equipment operation, optimize production parameters, and improve production quality and efficiency.

[0110] Correspondingly, the intelligent PVD control system for magnetron sputtering also includes a log recording unit, which is communicatively connected to the motion controller unit and the sensor control unit; the log recording unit is used to record the production process information of the controlled equipment in real time.

[0111] In addition, the design of the target magnetic field is crucial for magnetron sputtering. The distribution of the magnetic field directly affects the electron distribution, which in turn affects the sputtering process and leads to low target utilization. To more accurately obtain the horizontal magnetic field distribution on the target surface, COMSOL software can be used to build a sputtering target model and simulate the magnetic field distribution on the target surface. Through simulation design, the influence of the combination of permanent magnets NdFeB on the magnetic field distribution and magnetic induction intensity on the target surface can be studied, thereby determining the magnetic field distribution and appropriate parameters to improve target utilization.

[0112] The magnetic field simulation can be performed on the magnetic circuit to calculate the magnetic field strength on the target surface under the current model. By adjusting the magnetic steel grade and the size of the core circular magnetic steel, the magnetic field strength on the target surface can reach the required magnetic field strength range.

[0113] In summary, the intelligent PVD control system for magnetron sputtering based on the embodiment of the present application is explained. The intelligent PVD control system for magnetron sputtering has powerful data acquisition, processing, display and storage functions, which can give users a good human-computer interaction experience. Compared with the traditional PLC system, the intelligent PVD control system for magnetron sputtering can automatically control and monitor the equipment, improve the working efficiency and production speed of the equipment; it can also run on computers with different operating systems, so that operators have a good interactive experience and reduce the learning cost of operators; it can also accurately control and monitor the equipment, improve the accuracy and stability of the equipment, and support more complex algorithm implementation; it can also visualize the data and equipment status through a graphical interface, so that users can easily and intuitively understand the operation of the equipment; it can also support users to achieve remote control and monitoring through the network, which is convenient for users to operate and manage the equipment anytime, anywhere.

[0114] The above description of the present application and its embodiments is non-limiting. The drawings show only one embodiment of the present application, and the actual structure is not limited thereto. In short, if a person skilled in the art is inspired by this and, without departing from the inventive purpose of this application, designs a structure and embodiment similar to this technical solution without creatively designing, they shall fall within the scope of protection of this application.

Claims

1. An intelligent PVD control system for magnetron sputtering, suitable for being communicatively connected to a controlled device, characterized in that: include: A configuration unit, configured to configure production parameters and production processes; A motion controller unit, the motion controller unit being communicatively connected to the configuration unit; the motion controller unit being used to control the working states of multiple movable components of the controlled device; a sensor control unit, the sensor control unit being communicatively connected to the motion controller unit and configured to acquire sensing data of at least one sensor of the controlled device; A production status visualization interface is communicatively connected to the motion controller unit; the production status visualization interface is used to display the control information of the motion controller unit on the movable component and the sensor data of the sensor.

2. The intelligent PVD control system for magnetron sputtering according to claim 1, wherein: The configuration unit includes a configuration database and a configuration interface. The configuration database is used to store production parameters and production processes. The configuration interface is connected to the configuration database and is used to display production parameters and production processes.

3. The intelligent PVD control system for magnetron sputtering according to claim 1, wherein: The production parameters include pumping time, upper and lower pressure limits, and upper and lower temperature limits.

4. The intelligent PVD control system for magnetron sputtering according to claim 1, wherein: The motion controller unit is further configured to start a corresponding controller based on the production process of the configuration unit to control the working state of the movable parts of the controlled device.

5. The intelligent PVD control system for magnetron sputtering according to claim 4, wherein: The motion controller unit includes an air extraction valve control module, and the air extraction valve control module is used to control the working state of the air extraction valve of the controlled device.

6. The intelligent PVD control system for magnetron sputtering according to claim 4, wherein: The motion controller unit further includes a relief valve control module, which is used to control the working state of the relief valve of the controlled device and the state feedback of its corresponding sensor.

7. The intelligent PVD control system for magnetron sputtering according to claim 3, wherein: The sensor data includes pressure sensor data and temperature sensor data.

8. The intelligent PVD control system for magnetron sputtering according to claim 7, wherein: The sensor control unit is also used to determine whether a specific cavity of the controlled device has reached a preset air pressure value based on the received pressure sensing data of the controlled device and the upper and lower pressure limits in the production parameters configured by the configuration unit. The sensor control unit is also used to determine whether the temperature of the controlled device has reached an expected temperature based on the received temperature sensing data of the controlled device and the upper and lower temperature limits in the production parameters configured by the configuration unit.

9. The intelligent PVD control system for magnetron sputtering according to claim 5, wherein: The motion controller unit further includes a baffle valve control module and / or a flap valve control module, wherein the baffle valve control module is used to control the working state of the baffle valve of the controlled device, and the flap valve control module is used to control the working state of the flap valve of the controlled device.

10. The intelligent PVD control system for magnetron sputtering according to claim 1, wherein: The intelligent PVD control system for magnetron sputtering further includes a log recording unit; the log recording unit is used to record the production process information of the controlled equipment in real time.

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