Wafer-level carbon-based semiconductor epitaxial layer shape parameter measuring device

Abstract

The invention discloses a shape parameter measuring device for a wafer-level carbon-based semiconductor epitaxial layer, and the device comprises a vertical sample stage module which is used for clamping a wafer sample and enabling the wafer sample to be perpendicular to the upper surface of a rack; the combined light source type ellipsometry module and the confocal microscopic Raman spectrum measurement module are respectively used for detecting ellipsometry spectrum information and Raman spectrum information of the same point position on a carbon-based semiconductor epitaxial layer on the surface of the wafer sample; the combined light source type ellipsometry module and the confocal microscopic Raman spectrum measurement module are respectively connected with the data processing module, the physical characteristics of the carbon-based semiconductor epitaxial layer are extracted according to Raman spectrum information and ellipsometry spectrum information, and an optical model and an oscillator model are established according to the physical characteristics of the carbon-based semiconductor epitaxial layer. By means of the method, the problem that it is difficult to carry out high-precision in-situ characterization on the shape parameters of the large-size wafer is solved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor parameter measurement, and more particularly to a device for measuring the shape parameters of a wafer-level carbon-based semiconductor epitaxial layer. Background Technology

[0002] Carbon-based semiconductor materials, due to their ultra-wide bandgap, high thermal conductivity, and high carrier mobility, are key alternatives to traditional silicon-based semiconductor materials, addressing their approach to physical limits. They are widely used in 5G communications, new energy vehicles, aerospace, and other fields. Therefore, high-precision characterization and measurement of wafer-level carbon-based semiconductor substrate epitaxy are crucial for their serviceability. Traditional measurement methods, such as AFM and SEM, have high environmental requirements, high costs, and difficulties in instrument integration, making it challenging to simultaneously characterize the shape parameters of carbon-based semiconductor materials in situ. Ellipsometry, with its high measurement accuracy, wide parameter range, and non-destructive nature, is widely used in the semiconductor industry for measuring important parameters such as film thickness and optical constants, and is currently one of the potentially effective technologies for solving the aforementioned problems.

[0003] The measurement results of an ellipsometer are limited by the completeness of prior knowledge regarding the measurement parameters; the more complete the prior knowledge, the higher the reliability of the measured parameters. Currently, the prior knowledge used by ellipsometers largely relies on other auxiliary equipment. However, different instruments have inconsistent reference standards and varying measurement environments during the measurement process. This results in the shape parameters of the material being in dynamic change, making it difficult to achieve the high-precision and high-reliability measurement goals of the measurement system. In addition, ellipsometers generally place the sample flat during measurement, but placing large-sized wafers flat introduces additional warping, which affects measurement accuracy.

[0004] Therefore, there is an urgent need to develop a device that can achieve high-precision isotopic characterization of epitaxial shape parameters of wafer-level carbon-based semiconductor substrates. Summary of the Invention

[0005] The purpose of this invention is to overcome the shortcomings of the existing technology and provide a wafer-level carbon-based semiconductor epitaxial layer shape parameter measurement device.

[0006] To achieve the above objectives, the technical solution of the present invention is as follows:

[0007] A wafer-level carbon-based semiconductor epitaxial layer shape parameter measurement device includes a frame and a combined light source ellipsometric measurement module, a confocal micro-Raman spectroscopy measurement module, a data processing module, and a vertical sample stage module disposed above the frame. The vertical sample stage module is used to clamp the wafer sample and make the wafer sample perpendicular to the upper surface of the frame. The combined light source ellipsometric measurement module and the confocal micro-Raman spectroscopy measurement module are respectively used to detect the ellipsometric and Raman spectroscopy information of the same point on the surface of the carbon-based semiconductor epitaxial layer of the wafer sample, and the light beam illuminating the surface of the wafer sample is parallel to the upper surface of the frame. The combined light source ellipsometric measurement module and the confocal micro-Raman spectroscopy measurement module are respectively connected to the data processing module. The data processing module is used to extract the physical properties of the carbon-based semiconductor epitaxial layer based on the Raman and ellipsometric spectroscopy information, establish an optical model and an oscillator model based on the physical properties of the carbon-based semiconductor epitaxial layer, and perform fitting analysis based on the ellipsometric spectroscopy information to obtain the shape parameters.

[0008] Preferably, the frame includes an upper base, a lower base, and an angle adjustment wedge. The combined light source ellipsometric measurement module, confocal micro Raman spectroscopy measurement module, data processing module, and vertical sample stage module are mounted on the upper base. The upper surface of the frame is the upper surface of the upper base, and one end of the upper base and the lower base are connected. The angle adjustment wedge is disposed between the upper base and the lower base and is used to adjust the tilt angle of the upper base relative to the lower base. The tilt angle ranges from 0 to 2°.

[0009] Preferably, the vertical sample stage module includes a three-jaw centering mechanism and a three-axis displacement stage. The three-axis displacement stage is mounted on the upper surface of the upper base, and the three-jaw centering mechanism is mounted above the three-axis displacement stage. The three-axis displacement stage is used to adjust the position of the three-jaw centering mechanism and the wafer sample it holds in the x, y, and z directions.

[0010] Preferably, the combined light source ellipsometric measurement module includes a combined light source module, a polarization generator, a polarization analyzer, and a first detector. The combined light source module includes light sources that emit ultraviolet-visible-near-infrared and mid-infrared spectra, respectively. The polarization generator includes a polarizer and a first rotation compensator located on the same optical axis. The polarization analyzer includes a second rotation compensator and an analyzer located on the same optical axis. The light emitted by the light source in the combined light source module is transmitted to the polarization generator via optical fiber. The polarizer and the first rotation compensator convert the light transmitted by the optical fiber into deflected light, which is then incident obliquely on the surface of the wafer sample. The polarized light reflected from the surface of the wafer sample is incident on the polarization analyzer and transmitted to the first detector via optical fiber to acquire ellipsometric spectral information.

[0011] Preferably, for wafer samples of different thickness levels, the combined light source ellipsometric measurement module can be selected to perform detection under ultraviolet-visible-near-infrared or mid-infrared spectral bands; if the wafer sample contains nanoscale thin films, the combined light source ellipsometric measurement module selects the ultraviolet-visible-near-infrared spectral band for measurement; if the wafer sample contains micron-scale thin films, the combined light source ellipsometric measurement module selects the mid-infrared spectral band for measurement.

[0012] Preferably, the confocal micro Raman spectroscopy measurement module includes a Raman source, a first filter, a beam splitter, an objective lens, a second filter, a confocal pinhole, and a second detector. The light emitted by the Raman source is transmitted through an optical fiber to the first filter for processing, forming a highly simple color beam. The beam is transmitted by the beam splitter to the objective lens, and after being focused by the objective lens, it is incident perpendicularly on the surface of the wafer sample, exciting the wafer sample to generate a Raman scattering signal. The Raman scattering signal is collected by the objective lens, passes through the second filter, and is then transmitted to the confocal pinhole. After the stray light in the Raman scattering signal is filtered out by the confocal pinhole, it is transmitted through an optical fiber to the second detector to acquire Raman spectral information.

[0013] Preferably, the Raman light source includes a laser light source with a wavelength of 532 nm or 785 nm.

[0014] Preferably, the shape parameters include one or more of the following: film thickness, surface morphology, optical constant, band gap, and anisotropic parameters.

[0015] Preferably, the data processing module includes a first analysis unit, a second analysis unit, and a visualization unit connected in sequence. The physical properties of the carbon-based semiconductor epitaxial layer include surface roughness, residual stress, and material composition parameters. The first analysis unit is connected to the second detector and is used to extract the residual stress and material composition parameters of the carbon-based semiconductor epitaxial layer surface based on the Raman spectral information. The second analysis unit is connected to the first detector and is used to invert the surface roughness based on the elliptic spectral information. An optical model and an oscillator model are established based on the surface roughness, residual stress, and material composition parameters. The elliptic spectral information is then used for fitting analysis to obtain shape parameters, and the results are displayed through the visualization unit.

[0016] Preferably, the wafer sample is 2 to 12 inches in size.

[0017] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0018] (1) The combined light source elliptic measurement module in the wafer-level carbon-based semiconductor epitaxial layer shape parameter measurement device proposed in this invention adopts a combined light source design. The wavelength range of the light source covers the ultraviolet-visible-near infrared and mid-infrared bands, which can meet the requirements of measuring the optical response of the wafer substrate and epitaxial layer in different bands and solving the film thickness across scales.

[0019] (2) The wafer-level carbon-based semiconductor epitaxial layer shape parameter measurement device proposed in this invention constructs a modular combined light source ellipsometry measurement module and a confocal micro Raman spectroscopy measurement module, which can achieve high-precision in-situ characterization of the epitaxial shape parameters of wafer-level carbon-based semiconductor substrates. The confocal micro Raman spectroscopy measurement module enriches the number of physical properties characterized by materials, which helps to distinguish material properties and types. At the same time, the in-situ acquired Raman spectral information serves as prior information on the material composition in ellipsometry modeling, improving the accuracy and reliability of the ellipsometry measurement results.

[0020] (3) The wafer-level carbon-based semiconductor epitaxial layer shape parameter measurement device proposed in this invention uses an angle adjustment wedge to adjust the device above the upper base to be tilted at a small angle with the vertical direction, so that the wafer sample is placed at an angle, avoiding the additional warping of the wafer caused by flat placement or gravity, which helps to reduce the influence of additional warping on the measurement results in the detection of large-size wafers and improve the measurement accuracy of the device. Attached Figure Description

[0021] Figure 1 This is a top view schematic diagram of a wafer-level carbon-based semiconductor epitaxial layer shape parameter measurement device according to an embodiment of this application;

[0022] Figure 2 This is a schematic diagram of the frame and vertical sample stage module of the wafer-level carbon-based semiconductor epitaxial layer shape parameter measurement device according to an embodiment of this application;

[0023] Figure 3 This is a schematic diagram of the frame of a wafer-level carbon-based semiconductor epitaxial layer shape parameter measurement device according to an embodiment of this application;

[0024] The attached figures are labeled as follows: 110, combined light source module; 120, polarization generator; 121, polarizer; 122, first rotation compensator; 130, polarization analyzer; 131, second rotation compensator; 132, analyzer; 140, first detector; 210, Raman light source; 220, optical path system; 221, first filter; 222, beam splitter; 223, objective lens; 224, second filter; 225, confocal pinhole; 230, second detector; 310, first analysis unit; 320, second analysis unit; 330, visualization unit; 410, three-jaw centering mechanism; 420, three-axis displacement stage; 500, wafer sample; 510, upper base; 511, lower base; 512, tilt adjustment wedge. Detailed Implementation

[0025] The present invention will be further explained below with reference to the accompanying drawings and specific embodiments. The accompanying drawings are merely illustrative to facilitate understanding of the invention, and their specific proportions can be adjusted according to design requirements. The vertical relationships of relative elements and the definitions of front / back in the graphics described herein should be understood by those skilled in the art to refer to the relative positions of the components; therefore, they can all be flipped to present the same component, and all of this should fall within the scope disclosed in this specification.

[0026] refer to Figure 1-3 This application provides a wafer-level carbon-based semiconductor epitaxial layer shape parameter measurement device, including a frame and a combined light source ellipsometry module, a confocal micro Raman spectroscopy module, a data processing module, and a vertical sample stage module disposed above the frame. The vertical sample stage module is used to clamp a wafer sample 500 and make the wafer sample 500 perpendicular to the upper surface of the frame. The size of the wafer sample 500 measured in this application embodiment can be 2 to 12 inches. The entire upper surface of the frame can be tilted at a small angle with the horizontal direction of the frame location. Therefore, when clamping the wafer sample 500, the wafer sample 500 is tilted at a small angle with the vertical direction of the frame location, avoiding the impact of additional wafer warping caused by gravity on measurement accuracy. The combined light source ellipsometric measurement module and the confocal micro-Raman spectroscopy measurement module are used to detect the ellipsometric and Raman spectral information of the same point on the carbon-based semiconductor epitaxial layer on the surface of the wafer sample 500, respectively. The light beam illuminating the surface of the wafer sample 500 is parallel to the upper surface of the frame. The light emitted from the combined light source ellipsometric measurement module and the light emitted from the confocal micro-Raman spectroscopy measurement module coincide on the light spot formed by illuminating the surface of the wafer sample 500, thus enabling the measurement of the ellipsometric and Raman spectral information at the same point. The combined light source ellipsometric measurement module and the confocal micro-Raman spectroscopy measurement module are connected to the data processing module. The data processing module is used to extract the physical properties of the carbon-based semiconductor epitaxial layer based on the Raman and ellipsometric spectral information, establish optical and oscillator models based on the physical properties of the carbon-based semiconductor epitaxial layer, and perform fitting analysis based on the ellipsometric spectral information to obtain the shape parameters.

[0027] In a specific embodiment, refer to Figure 2The frame includes an upper base 510, a lower base 511, and a tilt adjustment wedge 512. A combined light source ellipsometric measurement module, a confocal micro-Raman spectroscopy measurement module, a data processing module, and a vertical sample stage module are mounted on the upper base 510. The upper surface of the frame is the upper surface of the upper base 510. The tilt adjustment wedge 512 is positioned between the upper base 510 and the lower base 511 to adjust the tilt angle of the upper base 510 relative to the lower base 511, with the tilt angle ranging from 0 to 2°. One end of the upper base 510 and the lower base 511 are hinged together by a connecting mechanism. The other end is wedged between the upper base 510 and the lower base 511 by the tilt adjustment wedge 512. By adjusting the height of the tilt adjustment wedge 512, the overall tilt angle of the combined light source ellipsometric measurement module, the confocal micro-Raman spectroscopy measurement module, the data processing module, and the vertical sample stage module above the upper base 510 can be adjusted. This angle can be set to a small value. The length × width × height of the frame (D × E × F when the upper base 510 is not adjusted to have an angle with the horizontal direction) ≈ 800mm × 800mm × 100mm.

[0028] In a specific embodiment, the vertical sample stage module includes a three-jaw centering mechanism 410 and a three-axis displacement stage 420. The three-axis displacement stage 420 is mounted on the upper surface of the upper base 510, and the three-jaw centering mechanism 410 is mounted above the three-axis displacement stage 420. The three-axis displacement stage 420 adjusts the position of the three-jaw centering mechanism 410 and the wafer sample 500 it holds in the x, y, and z directions. The three-jaw centering mechanism 410 in the vertical sample stage module can clamp 2-12 inch wafer samples 500 and achieve automatic centering; the three-axis displacement stage 420 can adjust the position of the wafer sample 500 in the x, y, and z directions. To meet the requirement of clamping 12-inch wafers, the three-dimensional dimensions of the vertical sample stage module should meet the requirement of length × width × height (A × B × C) ≈ 400mm × 400mm × 600mm.

[0029] In a specific embodiment, refer to Figure 1The combined light source ellipsometric measurement module includes a combined light source module 110, a polarization generator 120, a polarization analyzer 130, and a first detector 140. The combined light source module 110 includes light sources emitting ultraviolet-visible-near-infrared and mid-infrared spectra, respectively. The polarization generator 120 includes a polarizer 121 and a first rotation compensator 122 located along the same optical axis. The polarization analyzer 130 includes a second rotation compensator 131 and an analyzer 132 located along the same optical axis. Light emitted from the light source in the combined light source module 110 is transmitted via optical fiber to the polarization generator 120. The polarizer 121 and the first rotation compensator 122 convert the light transmitted via the optical fiber into deflected light, which is then obliquely incident on the surface of the wafer sample 500. The polarized light reflected from the surface of the wafer sample 500 is incident on the polarization analyzer 130 and transmitted via optical fiber to the first detector 140 to acquire ellipsometric spectral information. This ellipsometric spectral information is then used for subsequent ellipsometric analysis.

[0030] In a specific embodiment, the combined light source module 110 in the combined light source ellipsometric measurement module can provide light sources in two bands (ultraviolet-visible-near-infrared band and mid-infrared band). For wafer samples 500 of different thickness levels, the combined light source ellipsometric measurement module 110 can select to perform detection under the ultraviolet-visible-near-infrared band spectrum or the mid-infrared band spectrum. If the wafer sample 500 contains nanoscale thin films, the ultraviolet-visible-near-infrared band spectrum is selected for measurement in the combined light source ellipsometric measurement module; if the wafer sample 500 contains micron-scale thin films, the mid-infrared band spectrum is selected for measurement in the combined light source ellipsometric measurement module. In one embodiment, the combined light source module 110 can be a combination of an SLS201L( / M) halogen tungsten light source with a wavelength range of 250 nm-1650 nm and an MLQF10500 quantum cascade laser with a wavelength range of 360-2600 nm. The wafer epitaxial layer thickness measured in the embodiments of this application ranges from nanometers to tens of micrometers. The film thickness directly affects the distribution of oscillation peaks in the ellipsometric spectrum, and thus affects the accuracy of the measurement results. For nanometer-scale thin films, ellipsometric spectroscopy in the 250 nm to 1650 nm (ultraviolet-visible-near-infrared band spectrum) is used to provide high-precision thickness estimation; while for micrometer-scale thin films, measurements are performed in the 1.5 μm to 10 μm (mid-infrared spectrum).

[0031] In a specific embodiment, the confocal micro Raman spectroscopy measurement module includes a Raman light source 210, a first filter 221, a beam splitter 222, an objective lens 223, a second filter 224, a confocal pinhole 225, and a second detector 230. The first filter 221, beam splitter 222, objective lens 223, second filter 224, and confocal pinhole 225 constitute the optical path system 220 of the confocal micro Raman spectroscopy measurement module. Light emitted from the Raman light source 210 is transmitted via optical fiber to the first filter 221 for processing, forming a high-resolution image. A monochromatic light beam is transmitted from beam splitter 222 to objective lens 223. After being focused by objective lens 223, the beam is perpendicularly incident on the surface of wafer sample 500, exciting the wafer sample 500 to generate a Raman scattering signal. The Raman scattering signal is collected by objective lens 223, passes through second filter 224, and then is transmitted to confocal pinhole 225. After stray light in the Raman scattering signal is filtered out by confocal pinhole 225, it is transmitted to second detector 230 via optical fiber to acquire Raman spectral information, achieving high-resolution Raman signal acquisition and analysis. Specifically, Raman source 210 includes a laser source with a wavelength of 532nm or 785nm. Raman source 210 selects a laser source with a center wavelength of 532nm, supports adjustable power to avoid the influence of photothermal effects on the sample, and has a backup laser source with a wavelength of 785nm to reduce fluorescence background.

[0032] In specific embodiments, the shape parameters include one or more of the following: film thickness, surface morphology, optical constants, band gap, and anisotropic parameters. The anisotropic parameters include birefringence Δn and optical axis orientation θ.

[0033] In a specific embodiment, the data processing module includes a first analysis unit 310, a second analysis unit 320, and a visualization unit 330 connected in sequence. The physical properties of the carbon-based semiconductor epitaxial layer include surface roughness, residual stress, and material composition parameters. The first analysis unit 310 is connected to the second detector 230 and is used to extract the residual stress and material composition parameters of the carbon-based semiconductor epitaxial layer surface based on Raman spectral information. The second analysis unit 320 is connected to the first detector 140 and is used to invert the surface roughness based on elliptic spectral information. An optical model and an oscillator model are established based on the obtained surface roughness, residual stress, and material composition parameters. The elliptic spectral information is then used for fitting analysis to obtain shape parameters, and the results are displayed through the visualization unit 330. Specifically, the physical properties of the carbon-based semiconductor epitaxial layer extracted through Raman spectral information and elliptic spectral information facilitate the construction of optical models and oscillator models, and the elliptic spectral information is used for fitting analysis. The specific analysis process is similar to the elliptic analysis process and will not be repeated here. The visualization unit 330 can display the Raman spectral analysis results and the elliptic spectral fitting analysis results in a graphical form.

[0034] Correspondingly, embodiments of this application provide a method for measuring the shape parameters of a wafer-level carbon-based semiconductor epitaxial layer. This method uses the aforementioned device for measuring the shape parameters of a wafer-level carbon-based semiconductor epitaxial layer and includes the following steps:

[0035] 1) The wafer sample 500 is clamped on the three-jaw centering mechanism 410 of the vertical sample stage module, and the wafer sample 500 is held upright by the three-jaw centering mechanism 410.

[0036] 2) Adjust the triaxial displacement stage 420 to select the point to be measured on the surface of the wafer sample 500, and obtain the Raman spectrum information corresponding to the point to be measured through the confocal micro Raman spectroscopy measurement module;

[0037] 3) Keep the point to be measured stationary, switch to the combined light source type ellipsometric measurement module, and make the light emitted from the combined light source type ellipsometric measurement module coincide with the light emitted from the confocal micro Raman spectroscopy measurement module when it illuminates the surface of the wafer sample 500. Then measure the ellipsometric spectral information of the point to be measured through the combined light source type ellipsometric measurement module.

[0038] 4) By sending the Raman spectral information and ellipsometry information to the data processing module, the shape parameters of the carbon-based semiconductor epitaxial layer on the wafer sample 500 can be analyzed.

[0039] The above embodiments are only used to further illustrate the technical solution of the present invention, but the present invention is not limited to the embodiments. Any simple modifications, equivalent changes and alterations made to the above embodiments based on the technical essence of the present invention shall fall within the protection scope of the technical solution of the present invention.

Claims

1. A device for measuring the shape parameters of a wafer-level carbon-based semiconductor epitaxial layer, characterized in that, The system includes a frame and, mounted on top of the frame, a combined light source ellipsometric measurement module, a confocal micro-Raman spectroscopy measurement module, a data processing module, and a vertical sample stage module. The vertical sample stage module is used to hold the wafer sample and make the wafer sample perpendicular to the upper surface of the frame. The combined light source ellipsometric measurement module and the confocal micro-Raman spectroscopy measurement module are used to detect the ellipsometric and Raman spectroscopy information of the same point on the surface of the carbon-based semiconductor epitaxial layer of the wafer sample, respectively, and the light beam illuminating the surface of the wafer sample is parallel to the upper surface of the frame. The combined light source ellipsometric measurement module and the confocal micro-Raman spectroscopy measurement module are respectively connected to the data processing module. The data processing module is used to extract the physical properties of the carbon-based semiconductor epitaxial layer based on the Raman and ellipsometric spectral information, establish an optical model and an oscillator model based on the physical properties of the carbon-based semiconductor epitaxial layer, and perform fitting analysis based on the ellipsometric spectral information to obtain shape parameters.

2. The morphological parameter measuring device for wafer-level carbon-based semiconductor epitaxial layers according to claim 1, characterized in that, The frame includes an upper base, a lower base, and an angle adjustment wedge. The combined light source ellipsometric measurement module, confocal micro Raman spectroscopy measurement module, data processing module, and vertical sample stage module are mounted on the upper base. The upper surface of the frame is the upper surface of the upper base. The angle adjustment wedge is located between the upper base and the lower base and is used to adjust the tilt angle of the upper base relative to the lower base. The tilt angle ranges from 0 to 2°.

3. The wafer-level carbon-based semiconductor epitaxial layer shape parameter measuring device according to claim 2, characterized in that, The vertical sample stage module includes a three-jaw centering mechanism and a three-axis displacement stage. The three-axis displacement stage is installed on the upper surface of the upper base, and the three-jaw centering mechanism is installed above the three-axis displacement stage. The three-axis displacement stage is used to adjust the position of the three-jaw centering mechanism and the wafer sample it holds in the x, y, and z directions.

4. The morphological parameter measuring device for wafer-level carbon-based semiconductor epitaxial layers according to claim 1, characterized in that, The combined light source ellipsometric measurement module includes a combined light source module, a polarization generator, a polarization analyzer, and a first detector. The combined light source module includes light sources that emit ultraviolet-visible-near-infrared and mid-infrared spectra, respectively. The polarization generator includes a polarizer and a first rotation compensator located on the same optical axis. The polarization analyzer includes a second rotation compensator and an analyzer located on the same optical axis. The light emitted by the light source in the combined light source module is transmitted to the polarization generator via optical fiber. The polarizer and the first rotation compensator convert the light transmitted by the optical fiber into deflected light, which is then obliquely incident on the surface of the wafer sample. The polarized light reflected from the surface of the wafer sample is incident on the polarization analyzer and transmitted to the first detector via optical fiber to acquire ellipsometric spectral information.

5. The morphological parameter measuring device for wafer-level carbon-based semiconductor epitaxial layers according to claim 1, characterized in that, For wafer samples of different thickness levels, the combined light source ellipsometric measurement module can select either the ultraviolet-visible-near-infrared band or the mid-infrared band for detection. If the wafer sample contains nanoscale thin films, the ultraviolet-visible-near-infrared band is selected for measurement in the combined light source ellipsometric measurement module. If the wafer sample contains micron-scale thin films, the mid-infrared band is selected for measurement in the combined light source ellipsometric measurement module.

6. The shape parameter measuring device for wafer-level carbon-based semiconductor epitaxial layers according to claim 1, characterized in that, The confocal micro-Raman spectroscopy measurement module includes a Raman source, a first filter, a beam splitter, an objective lens, a second filter, a confocal pinhole, and a second detector. The light emitted by the Raman source is transmitted through an optical fiber to the first filter for processing, forming a highly simple color beam. The beam is transmitted by the beam splitter to the objective lens, and after being focused by the objective lens, it is incident perpendicularly on the surface of the wafer sample, exciting the wafer sample to generate a Raman scattering signal. The Raman scattering signal is collected by the objective lens, passes through the second filter, and is then transmitted to the confocal pinhole. After the stray light in the Raman scattering signal is filtered out by the confocal pinhole, it is transmitted through an optical fiber to the second detector to acquire Raman spectral information.

7. The morphological parameter measuring device for wafer-level carbon-based semiconductor epitaxial layers according to claim 6, characterized in that, The Raman light source includes a laser light source with a wavelength of 532 nm or 785 nm.

8. The shape parameter measuring device for wafer-level carbon-based semiconductor epitaxial layers according to claim 1, characterized in that, The morphological parameters include one or more of the following: film thickness, surface morphology, optical constant, band gap, and anisotropic parameters.

9. The morphological parameter measuring device for wafer-level carbon-based semiconductor epitaxial layers according to claim 1, characterized in that, The data processing module includes a first analysis unit, a second analysis unit, and a visualization unit connected in sequence. The physical properties of the carbon-based semiconductor epitaxial layer include surface roughness, residual stress, and material composition parameters. The first analysis unit is connected to the second detector and is used to extract the residual stress and material composition parameters of the carbon-based semiconductor epitaxial layer surface based on the Raman spectral information. The second analysis unit is connected to the first detector and is used to invert the surface roughness based on the elliptic spectral information. An optical model and an oscillator model are established based on the surface roughness, residual stress, and material composition parameters. The elliptic spectral information is then used for fitting analysis to obtain shape parameters, and the results are displayed through the visualization unit.

10. The morphological parameter measuring device for wafer-level carbon-based semiconductor epitaxial layers according to claim 1, characterized in that, The wafer samples are 2 to 12 inches in size.

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