Activation and surface protection method for ion implantation SiC

By combining high-temperature ion implantation, PVD carbon film deposition, laser-activated annealing, and multi-step etching, the problems of low impurity activation efficiency and surface damage after SiC ion implantation are solved, achieving efficient impurity activation and surface protection, and ensuring the high performance and reliability of SiC devices.

CN121969035APending Publication Date: 2026-05-01QINGDAO SIFANG SRI INTELLECTUAL TECHNOLOGY CO LTD
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Patent Information

Application Number
CN202610418260.3
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-04-01
Publication Date
2026-05-01

AI Technical Summary

Technical Problem

In existing technologies, SiC ion implantation results in low impurity activation efficiency, easy surface damage, and difficulty in completely removing the carbon film, leading to a decline in device performance and reliability.

Method used

A multi-step process is adopted, which combines high-temperature ion implantation with PVD carbon film deposition, laser-activated annealing, plasma etching, and BOE solution etching. The implantation layer is formed by high-temperature ion implantation, impurities are activated by instantaneous high temperature laser, and the carbon film is completely removed by plasma etching and chemical etching.

Benefits of technology

This achieves efficient impurity activation, ensuring the integrity of the SiC surface and avoiding wafer warpage and increased surface roughness caused by traditional high-temperature annealing, thereby improving device performance and reliability.

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Abstract

The invention discloses an activation and surface protection method for ion implantation SiC, and relates to the technical field of semiconductor manufacturing. Comprising the following steps: performing high-temperature ion implantation on a SiC wafer; pVD carbon film plating is carried out on the SiC wafer after high-temperature ion implantation; performing laser activation annealing on the SiC wafer plated with the carbon film; performing plasma physical etching on the annealed SiC wafer; carrying out sacrificial oxide layer treatment on the SiC wafer subjected to plasma physical etching; and carrying out BOE solution wet etching on the SiC wafer after sacrificial oxide layer treatment to obtain the SiC device. According to the method, through high-temperature ion implantation and laser annealing treatment and by adopting a multi-step carbon film removal process, the ion implantation impurity activation efficiency is remarkably improved, meanwhile, the morphology of the device is guaranteed, and the performance of the device is improved. The method has the advantages of simple process, high activation efficiency, good repeatability and the like, and is suitable for manufacturing SiC-based power semiconductor devices.
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