High-voltage switch assembly and power distribution switch

Abstract

The utility model provides a high-voltage switch assembly and a power distribution switch. The high-voltage switch assembly comprises a plurality of SiC MOS tube modules, a control module and an isolation driving module connected with the SiC MOS tube modules. The SiC MOS tube module is connected to a direct current bus; any one of the SiC MOS tube modules is connected with one of the isolation driving modules; and the control module is connected to the isolation driving module so as to control the turn-off or turn-on of the SiC MOS tube module through the isolation driving module. The high-voltage direct-current system can meet the requirement of a power distribution network within the 1500V high-voltage direct-current level, and the cost of the high-voltage direct-current system is

Description

Technical Field

[0001] The present application relates to the technical field of switching power supplies, and in particular to a high-voltage switch assembly and a power distribution switch. Background Art

[0002] With the increasing demand in photovoltaic, energy storage, electric vehicle charging and other fields, DC microgrid technology has developed rapidly. At present, there is no universal standard for the voltage system of DC microgrid, but with the increase of system scale and power supply distance, the demand for nominal voltage is getting higher and higher. However, the rated withstand voltage level of existing DC switching devices (such as DC circuit breakers and contactors) is generally below DC 1000V. For applications at higher voltages, it is difficult to find suitable switching devices, making the system cost extremely expensive.

[0003] Therefore, a measure is urgently needed to solve the switching requirements under higher DC voltage. Utility Model Content

[0004] The purpose of the present application is to provide a high-voltage switch assembly and a distribution switch to solve the technical problem that DC switch devices in the prior art cannot meet the switching requirements above 1000V, further leading to an increase in the cost of high-voltage DC systems.

[0005] To achieve the above-mentioned purpose and other related purposes, in a first aspect, the present application provides a high-voltage switch component, which includes: a plurality of SiC MOS tube modules, a control module, and an isolation drive module connected to the SiC MOS tube modules; the SiC MOS tube modules are connected to a DC bus; any of the SiC MOS tube modules is connected to an isolation drive module; the control module is connected to the isolation drive module to control the turning off or on of the SiC MOS tube module through the isolation drive module.

[0006] In an implementation of the first aspect, the SiC MOS tube module includes a SiC MOS tube and a voltage-equalizing resistor; the voltage-equalizing resistor is connected in parallel with the SiC MOS tube; the driving foot of the SiC MOS tube is connected to the isolation driving module, and the SiC MOS tube is connected to a DC bus.

[0007] In an implementation manner of the first aspect, when the SiC MOS transistor module includes at least two SiC MOS transistors, the at least two SiC MOS transistors and the grading resistor are connected in parallel to a DC bus.

[0008] In an implementation manner of the first aspect, the SiC MOS tube is a high-power N-type silicon carbide MOS tube.

[0009] In an implementation of the first aspect, the control module includes a current sensor and a control unit to collect current information on the DC bus; one end of the current sensor is connected to the DC bus, and the other end is connected to the control unit; the control unit is connected to the isolation drive module.

[0010] In an implementation of the first aspect, the isolation driving module includes: an isolation control power supply, an optocoupler unit, and a driving unit; the isolation control power supply is respectively connected to the power supply and the driving unit; the optocoupler unit is respectively connected to the control module and the driving unit; and the driving unit is connected to the SiC MOS tube module.

[0011] In an implementation of the first aspect, the driving unit includes: a driving controller, a diode, a first resistor, a second resistor and a third resistor; the diode is respectively connected to the driving controller and one end of the first resistor, and the other end of the first resistor is connected to the drain of the SiC MOS tube; one end of the second resistor is connected to the driving controller, and the other end and one end of the third resistor are commonly connected to the driving pin of the SiC MOS tube; the other end of the third resistor and the driving controller are commonly connected to the source of the SiC MOS tube.

[0012] In an implementation manner of the first aspect, a plurality of the devices are connected in series to a DC bus.

[0013] In a second aspect, the present application provides a distribution switch, which includes the high-voltage switch assembly described in any implementation of the first aspect of the present application.

[0014] In an implementation manner of the second aspect, the distribution switch is suitable for a distribution network within a high voltage direct current level of 1500V.

[0015] As described above, the high-voltage switch assembly and the power distribution switch described in this application have the following beneficial effects:

[0016] The present application can meet the needs of distribution networks within the 1500V high-voltage DC level, greatly reducing the cost of high-voltage DC systems. Compared with traditional mechanical switches, the high-voltage switch assembly and distribution switch of the present application have no switching arcs and a long life. The switching speed is fast, the short-circuit current is controllable, and the reliability is high. Remote control, data collection and communication, and adaptive protection can be realized, thereby greatly improving the intelligence level of the distribution system. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 Shown is a structural schematic diagram of a high-voltage switch assembly according to an embodiment of the present application.

[0018] Figure 2Shown is a circuit diagram of a SiC MOS tube module according to an embodiment of the present application.

[0019] Figure 3 Shown is a circuit diagram of a SiC MOS tube module according to another embodiment of the present application.

[0020] Figure 4 A circuit diagram of a SiC MOS tube module according to another embodiment of the present application is shown.

[0021] Figure 5 A circuit diagram of a control module according to an embodiment of the present application is shown.

[0022] Figure 6 Shown is a circuit diagram of an isolation driving module according to an embodiment of the present application.

[0023] Figure 7 Shown is a circuit diagram of a high voltage switch assembly according to another embodiment of the present application.

[0024] Description of symbols

[0025] 100 High voltage switch assembly

[0026] 110 SiC MOS tube module

[0027] 120 Control module

[0028] 121 Control unit

[0029] 130 Isolation drive module

[0030] 131 Isolation control power supply

[0031] 132 Optocoupler Unit

[0032] 133 Drive Unit DETAILED DESCRIPTION

[0033] The following describes the embodiments of the present application through specific examples, and those skilled in the art can easily understand other advantages and effects of the present application from the contents disclosed in this specification. The present application can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present application. It should be noted that the following embodiments and features in the embodiments can be combined with each other without conflict.

[0034] It should be noted that the illustrations provided in the following embodiments are only schematic illustrations of the basic concept of the present application, and thus the drawings only show components related to the present application rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed at will, and the component layout may also be more complicated.

[0035] In the description of the present application, it should be understood that the terms "middle", "upper", "lower", "top", "inside", "outside", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0036] In addition, it should be understood that, unless otherwise specified or indicated, the terms "first", "second", etc. appearing in the specification are only used to distinguish the various components, elements, steps, etc. in the specification, and are not used to indicate the logical relationship or sequential relationship between the various components, elements, steps, etc., nor can they be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated.

[0037] In order to make the purpose, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present application. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the application for which protection is sought, but merely represents the selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present application.

[0038] In view of the problem that current DC switch devices cannot meet the switching requirements of more than 1000V, which further leads to an increase in the cost of high-voltage DC systems, the present application provides a high-voltage switch assembly and a distribution switch, which connects a number of SiC MOS tube modules in series and connects an isolation drive module to each SiC MOS tube module to simultaneously control the shutdown or conduction of the multiple SiC MOS tube modules, so as to ensure that the voltage applied to a single SiC MOS tube module does not exceed the withstand voltage of the SiC MOS tube module in the operating state, so as to further meet the distribution switch requirements of a 1500V high-voltage DC distribution network; compared with traditional mechanical switches, the high-voltage switch assembly of the present application has no switching arc and a long service life; fast switching speed, controllable short-circuit current, and high reliability; and can significantly reduce the construction cost of the high-voltage DC distribution system.

[0039] The following will be combined with the attached Figure 1 To Attachment Figure 7 The principles and implementation methods of a high-voltage switch assembly and a distribution switch of this embodiment are described in detail so that those skilled in the art can understand the high-voltage switch assembly and the distribution switch of this embodiment without creative work.

[0040] See also Figure 1 , which is a schematic diagram of the structure of a high voltage switch assembly of the present application in one embodiment. Figure 1 As shown, the high-voltage switch assembly 100 includes: a SiC MOS tube module 110 , a control module 120 , and an isolation driving module 130 connected to the SiC MOS tube module 110 .

[0041] Specifically, the SiC MOS tube module 110 is connected to the DC bus; any of the SiC MOS tube modules 110 is connected to an isolation driving module 130; the control module 120 is connected to the isolation driving module 130 to control the shutdown or conduction of the SiC MOS tube module 110 through the isolation driving module 130.

[0042] Specifically, the control module 120 outputs a driving control signal to control the on or off of the SiC MOS tube module 110 through the isolation driving module 130, so as to further meet the requirements of the distribution switch of the high-voltage direct current distribution network.

[0043] In some implementations, the SiC MOS transistor module 110 includes a SiC MOS transistor and a voltage balancing resistor.

[0044] It should be noted that SiC MOS tubes, namely silicon carbide MOSFET (metal oxide semiconductor field effect transistor), are high-performance power devices that use silicon carbide as semiconductor materials. Compared with traditional silicon MOSFETs, they have significant advantages in withstand voltage, on-resistance, thermal stability, etc.

[0045] High withstand voltage characteristics: Compared with traditional silicon (Si) materials, the drift layer impedance of SiC materials is lower, which means that even without conductivity modulation, SiC MOS tubes can achieve high withstand voltage and low on-resistance. This makes them particularly advantageous in voltage applications above 600V, because at this voltage level, the on-resistance of traditional Si devices will increase significantly.

[0046] Low switching loss: SiC MOS tubes do not generate tail current in principle, which is different from IGBT (insulated gate bipolar transistor), which generates tail current when turned off, resulting in large switching losses. Therefore, the use of SiC MOS tubes can significantly reduce switching losses and help miniaturize heat dissipation components.

[0047] Suitable for high-frequency applications: Since SiC MOS tubes can achieve high withstand voltage and low impedance with a high-frequency structure, they are very suitable for applications that require high-frequency switching, such as electric vehicles and power converters.

[0048] Preferably, the SiC MOS tube is a high-power N-type silicon carbide MOS tube, and the rated voltage of the SiC MOS tube is 1200V.

[0049] like Figure 2 As shown, in one embodiment, the SiC MOS tube module 110 includes a SiC MOS tube and a voltage balancing resistor.

[0050] In this embodiment, the high voltage switch assembly 100 includes two SiC MOS transistor modules 110 , wherein the SiCMOS transistor Q1 and the voltage balancing resistor R1 constitute the first SiC MOS transistor module 110 , and the SiC MOS transistor Q2 and the voltage balancing resistor R2 constitute the second SiC MOS transistor module 110 .

[0051] Taking the first SiC MOS tube module 110 as an example, the voltage-equalizing resistor R1 is connected in parallel with the SiC MOS tube Q1, the driving foot of the SiCMOS tube Q1 is connected to one of the isolation driving modules 130, and the drain of the SiC MOS tube Q1 is connected to the input positive terminal Vin of the DC bus, the source of the SiC MOS tube Q1 is connected to the drain of the SiC MOS tube Q2, and the source of the SiC MOS tube Q2 is connected to the output positive terminal Vout of the DC bus, the SiC MOS tube Q2 is connected in parallel with the voltage-equalizing resistor R2, and the driving foot of the SiC MOS tube Q2 is connected to another isolation driving module 130.

[0052] It should be noted that the number of the SiC MOS tube modules 110 is not specifically limited and can be changed accordingly according to actual high voltage DC system design requirements.

[0053] In one embodiment, if Figure 3 As shown, the high-voltage switch assembly 100 includes three SiC MOS tube modules 110 , and the three SiC MOS tube modules 110 are connected in series to a DC bus.

[0054] It should be noted that the connection method of the three SiC MOS tube modules 110 connected in series to the DC bus is the same as the connection method of the two SiC MOS tube modules 110 connected in series to the DC bus, so it will not be repeated here.

[0055] In some implementations, the current carrying capacity of the circuit can be improved by connecting multiple SiC MOS transistors in parallel. When the SiC MOS transistor module 110 includes at least two SiC MOS transistors, at least two SiC MOS transistors and the balancing resistor are connected in parallel to the DC bus.

[0056] like Figure 4 As shown, one SiC MOS transistor module 110 includes SiC MOS transistors Q6, SiC MOS transistors Q7, SiC MOS transistors Q8 and a voltage-equalizing resistor R6; another SiC MOS transistor module 110 includes SiC MOS transistors Q9, SiC MOS transistors Q10, SiC MOS transistors Q11 and a voltage-equalizing resistor R7.

[0057] Specifically, taking one of the SiC MOS tube modules 110 as an example, SiC MOS tubes Q6, SiC MOS tubes Q7, SiC MOS tubes Q8 and the voltage balancing resistor R6 are connected in parallel, and the driving pin of SiC MOS tube Q6, the driving pin of SiC MOS tube Q7 and the driving pin of SiC MOS tube Q8 are all connected to the isolation driving module 130, the drain of SiC MOS tube Q6, the drain of SiC MOS tube Q7 and the drain of SiC MOS tube Q8 are connected to the input positive terminal Vin of the DC bus, and the source of SiC MOS tube Q6, the source of SiC MOS tube Q7 and the source of SiC MOS tube Q8 are connected to another SiC MOS tube module 110.

[0058] In some implementations, the control module 120 includes a current sensor and a control unit.

[0059] like Figure 5 As shown, the control module 120 includes a current sensor CT and a control unit 121 .

[0060] Specifically, one end of the current sensor CT is connected to the output positive terminal Vout of the DC bus, and the other end is connected to the control unit 121 , and the control unit 121 is connected to the isolation driving module 130 .

[0061] The control unit 121 generates a driving signal based on the current information collected by the current sensor CT, and sends the driving signal to the isolation driving module 130 , so as to control the turning off or on of each of the SiC MOS tube modules 110 through the isolation driving module 130 .

[0062] In some implementations, such as Figure 6 As shown, the isolation driving module 130 includes an isolation control power supply 131 , an optical coupling unit 132 and a driving unit 133 .

[0063] Specifically, the isolated control power supply 131 is respectively connected to the power supply and the driving unit 133 , the optical coupling unit 132 is respectively connected to the control module 120 and the driving unit 133 , and the driving unit 133 is connected to the SiCMOS tube module 110 .

[0064] It should be noted that the isolation driving modules 130 and the SiC MOS tube modules 110 are arranged in a one-to-one correspondence, that is, any one of the SiC MOS tube modules 110 is connected to one of the isolation driving modules 130 .

[0065] like Figure 6As shown, taking one of the driving units 133 as an example, the driving unit 133 includes: a driving controller U1, a diode D1, a first resistor R8, a second resistor R9 and a third resistor R10.

[0066] Specifically, the diode D1 is respectively connected to the driving controller U1 and one end of the first resistor R8, and the other end of the first resistor R8 is connected to the isolation driving module 130; one end of the second resistor R9 is connected to the driving controller U1, and the other end and one end of the third resistor R10 are connected to the SiC MOS tube module 110; the other end of the third resistor R10 and the driving controller U1 are connected to the SiC MOS tube module 110.

[0067] See also Figure 7 , which is a circuit diagram of a high-voltage switch assembly according to an embodiment of the present application.

[0068] like Figure 7 As shown, the high-voltage switch assembly includes two SiC MOS tube modules 110 , two isolation drive modules 130 and a control module 120 .

[0069] In this embodiment, any of the SiC MOS transistor modules 110 includes a SiC MOS transistor and a voltage balancing resistor.

[0070] The following combination Figure 7 The working process of the embodiment of the present application is described as follows:

[0071] When the high-voltage switch assembly 100 is turned on: the control unit 121 outputs a turn-on control signal through the current information obtained by the current sensor CT, so that the drive controller U3 and the drive controller U4 output a turn-on drive signal, so that the gate voltage of the SiCMOS tube Q12 and the gate voltage of the SiC MOS tube Q13 rise synchronously, so that the SiC MOS tube Q12 and the SiC MOS tube Q13 are turned on synchronously.

[0072] When the high-voltage switch assembly 100 is turned off: the control unit 121 outputs a turn-off control signal to enable the drive controller U3 and the drive controller U4 to output a turn-off drive signal, thereby causing the gate voltage of the SiC MOS tube Q12 and the gate voltage of the SiC MOS tube Q13 to drop synchronously, so that the SiC MOS tube Q12 and the SiC MOS tube Q13 are turned off synchronously.

[0073] When the SiC MOS transistor Q12 and the SiC MOS transistor Q13 are in the off state, the voltage balancing resistor R14 and the voltage balancing resistor R15 ensure that the SiC MOS transistor Q12 and the SiC MOS transistor Q13 are subjected to the same voltage.

[0074] Therefore, even if the withstand voltage of the SiC MOS transistor Q12 and the SiC MOS transistor Q13 is lower than the system voltage of the high voltage DC system, it can be ensured that the voltage applied to the SiC MOS transistor Q12 and the SiC MOS transistor Q13 will not exceed their maximum withstand voltage in all operating states.

[0075] An embodiment of the present application further provides a distribution switch, which is applied to a high-voltage direct current distribution system. The distribution switch includes the high-voltage switch assembly described in any embodiment of the present application.

[0076] Specifically, the distribution switch is suitable for distribution networks within a 1500V high voltage direct current level.

[0077] The descriptions of the processes or structures corresponding to the above-mentioned figures have different emphases. For parts that are not described in detail in a certain process or structure, please refer to the relevant descriptions of other processes or structures.

[0078] In summary, the high-voltage switch assembly and distribution switch of the present application can meet the distribution network within the 1500V high-voltage DC level, greatly reducing the cost of the high-voltage DC system; compared with traditional mechanical switches, the high-voltage switch assembly and distribution switch of the present application have no switching arc and long life; fast switching speed, controllable short-circuit current, and high reliability; remote control, data collection and communication, and adaptive protection can be realized, thereby greatly improving the intelligent level of the distribution system. Therefore, the present application effectively overcomes the various shortcomings of the prior art and has a high industrial utilization value.

[0079] The above embodiments are merely illustrative of the principles and effects of the present application and are not intended to limit the present application. Anyone familiar with the technology may modify or change the above embodiments without violating the spirit and scope of the present application. Therefore, all equivalent modifications or changes made by a person of ordinary skill in the art without departing from the spirit and technical ideas disclosed in the present application shall still be covered by the claims of the present application.

Claims

1. A high voltage switch assembly, characterized in that: include: Several SiC MOS tube modules, a control module, and an isolation drive module connected to the SiCMOS tube modules; The SiC MOS tube module is connected to the DC bus; Any of the SiC MOS tube modules is connected to one of the isolation drive modules; The control module is connected to the isolation driving module to control the turning off or on of the SiC MOS tube module through the isolation driving module.

2. The high voltage switch assembly according to claim 1, characterized in that: The SiC MOS tube module includes a SiC MOS tube and a voltage-equalizing resistor; The voltage balancing resistor is connected in parallel with the SiC MOS tube; The driving foot of the SiC MOS tube is connected to the isolation driving module, and the SiC MOS tube is connected to the DC bus.

3. The high voltage switch assembly according to claim 2, characterized in that: When the SiC MOS tube module includes at least two SiC MOS tubes, at least two SiC MOS tubes and the voltage balancing resistor are connected in parallel to a DC bus.

4. The high voltage switch assembly according to claim 2, characterized in that: The SiC MOS tube is a high-power N-type silicon carbide MOS tube.

5. The high voltage switch assembly according to claim 1, characterized in that: The control module includes a current sensor and a control unit to collect current information on the DC bus; One end of the current sensor is connected to the DC bus, and the other end is connected to the control unit; The control unit is connected to the isolation driving module.

6. The high voltage switch assembly according to claim 1, characterized in that: The isolation driving module includes: an isolation control power supply, an optical coupling unit, and a driving unit; The isolated control power supply is respectively connected to the power supply and the driving unit; The optical coupling unit is connected to the control module and the driving unit respectively; The driving unit is connected to the SiC MOS tube module.

7. The high voltage switch assembly according to claim 6, characterized in that: The driving unit includes: a driving controller, a diode, a first resistor, a second resistor and a third resistor; The diode is connected to the driving controller and one end of the first resistor respectively, and the other end of the first resistor is connected to the drain of the SiC MOS tube; One end of the second resistor is connected to the driving controller, and the other end and one end of the third resistor are connected together to the driving pin of the SiC MOS tube; The other end of the third resistor and the driving controller are commonly connected to the source of the SiC MOS tube.

8. The high voltage switch assembly according to claim 1, characterized in that: A plurality of the SiC MOS tube modules are connected in series to a DC bus.

9. A distribution switch, applied to a high voltage direct current distribution system, characterized in that: A high voltage switch assembly comprising any one of claims 1 to 8.

10. The power distribution switch according to claim 9, characterized in that: The distribution switch is suitable for distribution networks within the 1500V high voltage direct current level.

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