Focusing ring, process chamber and semiconductor process equipment

Abstract

The utility model discloses a focusing ring, a process chamber and semiconductor process equipment, and relates to the field of semiconductors. A focusing ring comprises a ring body and a fan-shaped adjusting piece. An annular surface is arranged at one end of the ring body along the axis of the ring body, and the adjusting piece is arranged on the annular surface and protrudes out of the annular surface in the axis direction; the central angle of the adjusting piece is smaller than 180 degrees. The problem that the thickness of the functional layer is not uniform after the product is etched can be solved.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor technology, and specifically relates to a focusing ring, a process chamber and semiconductor process equipment. Background Art

[0002] In recent years, with the gradual promotion of commercial applications of Micro-LED in the display field, Micro-LED has also put forward higher requirements for product yield. In order to prepare high-performance Micro-LED, GaN transferred from the substrate (usually Si substrate is selected) is usually used as the Micro-LED epitaxial layer, and the epitaxial layer of the transferred substrate is thinned to the required mesa layer, that is, the functional layer of the mesa process, and its thickness is generally ~1-1.2um. The uniformity of the mesa layer not only affects the uniformity of subsequent mesa etching, but also affects the electrical properties of the product due to over-etching of the top mask or bottom isolation layer material of the mesa etching. Therefore, the thickness uniformity of the mesa layer has an important influence on the final product yield. The chip preparation flow chart is as follows Figure 1 shown. Figure 1 A is a schematic diagram of bonding the LED epitaxial structure on the sapphire substrate to the silicon substrate and peeling off the sapphire substrate, including: sapphire substrate 01, silicon substrate 02, bonding layer 03, P-type doped GaN layer 04, active layer 05, N-type doped GaN layer 06 and buffer layer 07; Figure 1 B is a schematic diagram of silicon-based LED epitaxial thinning, where the N-type doped GaN layer 06 (i.e., N-GaN) is a mesa layer. Due to the small size of Micro-LED and the thick epitaxial layer, the mesa layer needs to be thinned to the normal LED thickness, and then the thinned mesa layer is photolithographically and etched to obtain an arrayed MicroLED chip.

[0003] Usually, after epitaxial wafers are off the production line, the thickness uniformity of the same batch of epitaxial wafers can be controlled within 3%; however, after thinning and etching, due to the difference in the thickness distribution of the source before etching or the difference in the etching depth distribution caused by the distribution of the chamber gas flow field during the etching process, the mesa layer will also have a large uniformity fluctuation result, and the thickness uniformity result is usually more than 8%, and some fluctuations exceed 17%. Therefore, how to improve and control the thickness uniformity of the mesa layer is crucial. Utility Model Content

[0004] The purpose of the embodiments of the present application is to provide a focusing ring, a process chamber and semiconductor process equipment that can solve problems such as uneven thickness of the functional layer after etching of the product.

[0005] In order to solve the above technical problems, this application is implemented as follows:

[0006] The embodiment of the present application provides a focusing ring, comprising: a ring body and a fan-shaped adjusting member;

[0007] The ring body is provided with an annular surface at one end along its own axis, and the adjusting member is provided on the annular surface and protrudes from the annular surface in the axial direction;

[0008] The central angle of the adjusting member is less than 180°.

[0009] The embodiment of the present application also provides a process chamber, comprising: a chamber, a bearing seat and the above-mentioned focusing ring;

[0010] The cavity is provided with a film transfer port and a suction end, and the film transfer port and the suction end are respectively located on two opposite sides of the cavity;

[0011] The focusing ring is arranged around the bearing seat so that the adjusting member of the focusing ring is located at a side away from the film transmission port.

[0012] The embodiment of the present application also provides a semiconductor process equipment, including: a transfer chamber, a suction device and the above process chamber;

[0013] The transmission chamber is connected to the film transmission port, and the suction device is connected to the suction end.

[0014] In the embodiment of the present application, in order to address the abnormal thickness phenomenon near the source point of the etching wafer, combined with the etching rate distribution trend, the shape of the focusing ring is changed so that different areas of the focusing ring have different thicknesses, so as to adaptively adjust the etching rate distribution in different areas of the wafer, thereby achieving the purpose of optimizing the uniformity of the thickness of the functional layer after thinning and etching. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 A and Figure 1 B is a schematic diagram of the Micro LED chip preparation process in the related art;

[0016] Figure 2 It is a schematic diagram of a side-drawing process equipment in the related art;

[0017] Figure 3 It is a schematic diagram of the layout of wafer measurement points in the related art;

[0018] Figure 4 A schematic diagram of the thickness distribution of the functional layer in the chip after thinning and etching in the related art;

[0019] Figure 5 It is a schematic diagram of a direct-extraction process equipment in the related art;

[0020] Figure 6This is a simplified diagram of the thickness distribution of the functional layer under the effect of a uniform focusing ring in an embodiment of the present application;

[0021] Figure 7 A front view of a focusing ring in one form disclosed in an embodiment of the present application;

[0022] Figure 8 A schematic diagram of the structure of a focusing ring in one form disclosed in an embodiment of the present application;

[0023] Fig. 9 A first structural schematic diagram of a focusing ring, a base ring and a bearing seat in one form disclosed in an embodiment of the present application;

[0024] Fig.10 A second structural schematic diagram of a focusing ring, a base ring and a bearing seat in one form disclosed in an embodiment of the present application;

[0025] Fig.11 This is a schematic diagram of the structure of the ring body disclosed in the embodiment of the present application;

[0026] Fig.12 A schematic diagram of the structure of the regulating member disclosed in the embodiment of the present application;

[0027] Fig.13 A schematic diagram of the structure of another form of a focusing ring, a base ring and a bearing seat disclosed in an embodiment of the present application;

[0028] Fig.14 A schematic diagram of a semiconductor process equipment disclosed in an embodiment of the present application;

[0029] Fig.15 This is a comparison diagram of the etching rate distribution within the wafer disclosed in the embodiment of the present application.

[0030] Description of reference numerals:

[0031] 01-sapphire substrate; 02-silicon substrate; 03-bonding layer; 04-P-type doped GaN layer; 05-active layer; 06-N-type doped GaN layer; 07-buffer layer;

[0032] 100-focus ring;

[0033] 110-ring body; 111-annular surface; 112-first inner annular surface; 113-first outer annular surface; 114-groove;

[0034] 120-adjusting member; 121-second inner annular surface; 122-second outer annular surface; 123-protrusion; 124-first end surface; 125-second end surface;

[0035] 200-transmission chamber;

[0036] 300-process chamber; 310-chamber; 311-film transfer port; 312-suction end; 320-bearing seat; 321-annular groove; 330-base ring;

[0037] 400 - Suction device. DETAILED DESCRIPTION

[0038] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0039] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described here, and the objects distinguished by "first", "second", etc. are generally of one type, and the number of objects is not limited. For example, the first object can be one or more. In addition, "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally indicates that the objects associated with each other are in an "or" relationship.

[0040] The embodiments of the present application are described in detail below through specific embodiments and their application scenarios in conjunction with the accompanying drawings.

[0041] A side-drawing process equipment is proposed in the related art, such as Figure 2 As shown, the arrow direction is the gas flow direction. The gas enters the process chamber from the gas inlet and flows out from the molecular pump exhaust port at the lower side. The gas flow rate of the wafer near the pump (PUMP) end area is greater than the gas flow rate of the transfer chamber (TM) end area.

[0042] Wafer measurement point layout is as follows Figure 3 As shown, a five-point collection method is used, top, middle, bottom, left and right, and the test points are collected in the edge EE5-EE15mm range (EE is the edge test point range, edge, EE5-EE15mm refers to the range of 5 to 15mm from the edge of the circular wafer along the diameter direction). The thickness distribution of the functional (mesa) layer in the wafer after thinning is shown in the figure. Figure 4 As shown in the figure, the height of the focus ring and the base ring are uniform. In addition, the value before etching has deviations and the machine's own airflow field affects the gas flow rate at the PUMP end of the wafer, which is generally greater than that at the TM end. After the wafer is etched, the margin deviation at some positions is amplified, and the thickness at the lower end is obviously higher, resulting in uneven thickness of the mesa layer after etching, affecting the yield.

[0043] Related technologies also provide direct extraction process equipment, such as Figure 5 As shown, the arrow direction is the gas flow direction. The gas enters the process chamber from the air inlet and flows out from the molecular pump outlet directly below. Compared with the side-extraction process equipment, the difference between the gas flow rate at the PUMP end of the wafer and the TM end in the direct-extraction process equipment is significantly reduced. By reducing the influence of the machine's own air flow field, the etching uniformity is improved and the fluctuation of the mesa layer thickness is reduced. However, this type of process equipment requires the redesign of the chamber structure of the equipment and the current process results, which requires large changes, complexity and a long cycle.

[0044] Based on the above situation, the embodiment of the present application aims at the problem of abnormal thickness near some points of the source of the etching wafer. In order to optimize the etching depth near different point areas and improve the uniformity of the target layer, uniform focusing rings of different thicknesses (that is, the thickness of each position in the same focusing ring remains consistent) are used to carry out the process. Based on the comparative analysis of the etching rate distribution trend under the process of uniform focusing rings of different thicknesses, the distribution trend of the points that affect the uniformity is confirmed; then, combined with the distribution trend, a special-shaped focusing ring is designed so that the thickness of the focusing ring in some areas is different. For the abnormal point area, the installation position of the focusing ring with different thickness areas is adjusted to adjust the etching rate distribution trend, so as to achieve the purpose of optimizing the uniformity of the thickness of the mesa layer after thinning and etching. Of course, the focusing ring in the embodiment of the present application is not only applicable to the thinning of the mesa layer, but also to the thinning of any other layer, which is not specifically limited here.

[0045] The specific implementation steps are as follows:

[0046] Collect previous information: Collect previous information on GaN wafers that are off-line and transferred from the same batch to confirm the thickness and distribution of the epitaxial layer;

[0047] Combined with the existing etching data of the machine: confirm the distribution trend of the current etching rate;

[0048] Combine the previous value information and the current etching distribution trend of the machine to confirm the position point where the focus ring thickness needs to be adjusted;

[0049] Configure focusing rings of different thicknesses for etching verification;

[0050] According to the verification results and rules, a special-shaped focusing ring is designed.

[0051] The thickness distribution diagram of the mesa layer under the standard uniform focusing ring effect is as follows Figure 6As shown, the previous value information of the sheet source is collected to obtain the sheet source thickness distribution, among which the lower point is obviously thicker than the upper point; the etching rate distribution trend is obtained by combining the current etching data, and the etching rate of the lower point is obviously lower than that of the upper point, that is, the etching rate of the position where the original point was thicker is lower, and the etching rate of the position where the original point was thinner is higher. Finally, the thickness distribution of the mesa layer in the sheet after thinning is obtained. The thickness uniformity of the mesa layer in the sheet after thinning is worse than the uniformity of the sheet source thickness, and it is confirmed that the point that needs to be adjusted is the lower point.

[0052] After testing with focusing rings of different thicknesses, the following rule is obtained: when the thickness of the focusing ring in the corresponding point area is increased, the etching rate of the corresponding point in the vicinity of the point EE1-EE30mm will decrease. On the contrary, when the thickness of the focusing ring in the corresponding point area is reduced, the etching rate of the corresponding point in the vicinity of the point EE1-EE30mm will increase. According to this rule, in order to improve the uniformity of the thickness of the mesa layer in the film after thinning, it is necessary to reduce the etching rate of the upper point and increase the etching rate of the lower point, so that the etching rate of the upper point is less than the etching rate of the lower point, so as to compensate for the fact that the thickness of the lower point in the front value of the film source is greater than that of the upper point, that is, the thickness of the focusing ring corresponding to the upper point area is greater than the thickness of the focusing ring corresponding to the lower point area.

[0053] Based on the above considerations, the embodiment of the present application discloses an improved focusing ring 100, such as Figures 7 to 15 As shown, the disclosed focus ring 100 includes a ring body 110 and a sector-shaped adjusting member 120 .

[0054] The ring body 110 is provided with an annular surface 111 at one end along its axis, and the adjusting member 120 is provided on the annular surface 111 and protrudes from the annular surface 111 in the axial direction.

[0055] Considering that the focus ring 100 is a complete ring structure, its ring body 110 can also be a complete ring structure, such as a circular ring structure.

[0056] In addition, the central angle of the adjusting member 120 is less than 180°. For example, the adjusting member 120 may be a sector ring with a central angle less than 180°. Based on this design, when the adjusting member 120 is disposed on the ring body 110, the local protrusion 123 of the ring body 110 can be ensured to make the thickness of the area greater than the thickness of other areas, so as to lay a foundation for adjusting the focus ring 100 during the subsequent installation of the focus ring 100.

[0057] In the embodiment of the present application, the thickness of the adjusting member 120 protruding from the annular surface 111 can be adjusted within a range of 5‰ of the wafer thickness, and the edge EE0-EE30mm range point can be adjusted to optimize uniformity.

[0058] Based on the above arrangement, the thickness of the ring body 110 in the area where the adjusting member 120 is provided is greater than the thickness in the area where the adjusting member 120 is not provided. Thus, when installing the focusing ring 100, the area of ​​the focusing ring 100 where the adjusting member 120 is provided and has a larger thickness can be placed at an upper point symmetrical to the lower point (i.e., the point where the source thickness is abnormal). This allows the difference in etching rate between the upper point and the lower point to be adjusted accordingly, thereby enabling the improvement of the uniformity of the thickness of the mesa layer within the wafer after thinning.

[0059] refer to Figure 8 In some embodiments, the ring body 110 includes a first inner ring surface 112 and a first outer ring surface 113, the adjusting member 120 includes a second inner ring surface 121 and a second outer ring surface 122, and the first inner ring surface 112 is aligned with the second inner ring surface 121, and the first outer ring surface 113 is aligned with the second outer ring surface 122 to prevent the edge of the adjusting member 120 from protruding from the inner circumference or outer circumference of the ring body 110.

[0060] In some embodiments, the central angle of the adjusting member 120 may range from 90° to 135°, including, for example, 90°, 100°, 120°, 130°, 135°, etc. Of course, it may also be other angles, which are not specifically limited here. In a more specific embodiment, the central angle of the adjusting member 120 may be 120°, and of course, it may also be adjusted within the range of 90° to 135° according to actual working conditions to meet the needs under different working conditions.

[0061] In addition, the height of the adjusting member 120 protruding from the annular surface 111 in the axial direction can range from 2 mm to 5 mm, including, for example, 2 mm, 3 mm, 4 mm, 5 mm, etc. Of course, other height values ​​can also be used, which are not specifically limited here. In a more specific embodiment, the thickness value of the adjusting member 120 (i.e., the above-mentioned height value) can be 4 mm. Of course, it can also be adjusted within the range of 2 mm to 5 mm according to actual working conditions to meet the needs under different working conditions.

[0062] In some embodiments, the ring body 110 and the adjusting member 120 may be an integral structure, that is, the entire focus ring 100 is an integral structure, and this design can ensure the overall strength of the focus ring 100, improve manufacturing efficiency, and shorten the manufacturing cycle. For example, the entire focus ring 100 may be integrally formed by casting, forging, machining, etc.

[0063] In other embodiments, the adjusting member 120 and the ring body 110 may be fixedly connected, and this design may reduce the complexity of the manufacturing process. For example, the adjusting member 120 and the ring body 110 may be fixed by welding, bonding, riveting, etc. to ensure the firmness and stability of the connection between the adjusting member 120 and the ring body 110.

[0064] In other embodiments, the adjusting ring and the ring body 110 may be detachably connected, and such a design can reduce the complexity of the manufacturing process and facilitate disassembly and assembly, so as to change the position of the adjusting member 120 on the ring body 110 and facilitate maintenance. For example, the adjusting member 120 and the ring body 110 may be connected by threaded connection, plug-in connection, clamping connection, sliding connection, etc., so as to facilitate the disassembly and assembly between the adjusting member 120 and the ring body 110.

[0065] refer to Fig.11 and Fig.12 In a more specific embodiment, one of the annular surface 111 and the surface of the adjusting member 120 facing the ring body 110 may be provided with at least one groove 114, and the other may be provided with at least one protrusion 123, and the protrusion 123 is assembled correspondingly with the groove 114. Based on this configuration, the adjusting member 120 and the ring body 110 can be assembled by the cooperation of the protrusion 123 and the groove 114, so as to ensure the stability of the assembly and facilitate the assembly and disassembly.

[0066] Optionally, the groove 114 can be provided on the annular surface 111 , and correspondingly, the protrusion 123 is provided on the surface of the adjusting member 120 facing the ring body 110 ; of course, the groove 114 can also be provided on the surface of the adjusting member 120 facing the ring body 110 , and correspondingly, the protrusion 123 is provided on the annular surface 111 .

[0067] For example, the number of the grooves 114 may be one or more, and accordingly, the number of the protrusions 123 may be one or more, and they are matched with the grooves 114. In addition, the depth of the groove 114 may range from 1 mm to 5 mm, including 1 mm, 3 mm, 5 mm, etc.; the width of the groove 114 in the radial direction may range from 5 mm to 15 mm, including 5 mm, 8 mm, 10 mm, 12 mm, 15 mm, etc. Of course, the depth and width of the groove 114 may also be other values, which are not specifically limited here.

[0068] Further, the groove 114 can be provided at the connection between the annular surface 111 and the outer peripheral surface of the ring body 110, and extend along the circumference of the ring body 110. Correspondingly, the protrusion 123 can be provided at the connection between the surface of the adjusting member 120 facing the ring body 110 and the outer peripheral surface of the adjusting member 120, and extend along the circumference of the adjusting member 120. Based on this arrangement, the matching between the protrusion 123 and the groove 114 can be facilitated, thereby facilitating the assembly and disassembly between the adjusting member 120 and the ring body 110, and the matching area between the protrusion 123 and the groove 114 can also be increased, thereby improving the stability of the assembly between the adjusting member 120 and the ring body 110.

[0069] For example, the groove 114 may be an arc-shaped groove, and the protrusion 123 may be an arc-shaped protrusion; of course, the groove 114 may also be a trapezoidal groove, and the protrusion 123 may be a trapezoidal protrusion. In the embodiment of the present application, the shapes of the groove 114 and the protrusion 123 are not specifically limited.

[0070] Of course, the groove 114 can also be arranged in a region of the annular surface 111 away from the outer circumference of the ring body 110 , and this method can also achieve matching installation.

[0071] In some embodiments, the central angles of the groove 114, the protrusion 123, and the adjusting member 120 are all equal. This design can ensure the stable assembly of the protrusion 123 and the groove 114 without causing the protrusion 123 to be exposed, thereby achieving stable assembly of the adjusting member 120 and the ring body 110 and avoiding interference between the protrusion 123 and other components.

[0072] In other embodiments, the central angle of the protrusion 123 is equal to the central angle of the adjusting member 120 and smaller than the central angle of the groove 114. This design can realize the assembly of the protrusion 123 and the groove 114 without causing the protrusion 123 to be exposed. At the same time, the protrusion 123 can also move circumferentially in the groove 114 to achieve fine adjustment of the position of the adjusting member 120.

[0073] Exemplarily, the central angle of the groove 114 may range from 90° to 150°, including 90°, 120°, 150°, etc. Of course, it may also be other degrees, which is not specifically limited here.

[0074] In the embodiment of the present application, the adjusting member 120 may further include a first end surface 124 and a second end surface 125. Fig.12 and Fig.13 As shown, the first end face 124 and the second end face 125 are located at the two ends of the adjusting member 120 along its own circumference, wherein a first angle is formed between the first end face 124 and the surface of the adjusting member 120 away from the ring body 110, and the first angle is greater than 90°, that is, the first end face 124 is an inclined end face; similarly, a second angle is formed between the second end face 125 and the surface of the adjusting member 120 away from the ring body 110, and the second angle is greater than 90°, that is, the second end face 125 is an inclined end face.

[0075] Based on the above arrangement, the inclined first end face 124 and the second end face 125 can enable a transition between the annular surface 111 of the ring body 110 and the surface of the adjusting member 120 away from the ring body 110 through the inclined end face, which can reduce the jump between the annular surface 111 and the surface of the adjusting member 120 away from the ring body 110 to a certain extent.

[0076] Exemplarily, the first angle may be 150°, and the second angle may be 150°. Of course, the first angle and the second angle may each be other degrees, which are not specifically limited here.

[0077] Based on the above-mentioned focusing ring 100, the embodiment of the present application further discloses a process chamber, such as Figures 7 to 14 As shown, the disclosed process chamber includes a cavity 310, a support seat 320 and the above-mentioned focusing ring 100. The cavity 310 may be provided with a film transfer port 311 and a suction end 312, and the film transfer port 311 and the suction end 312 are respectively located on opposite sides of the cavity 310, the film transfer port 311 is used to transfer the film into the cavity 310, and the suction end 312 is used to extract the gas in the cavity 310.

[0078] The focus ring 100 is arranged around the support seat 320, and the adjustment member 120 of the focus ring 100 is located at a side away from the film transfer port 311. Based on this arrangement, the etching rate of the area on one side close to the film transfer port 311 and the area on the other side close to the suction end 312 can be adjusted to reduce the difference in etching rate, thereby achieving an improvement in the thickness uniformity of the mesa layer in the thinned film.

[0079] In addition to the above structure, the process chamber 300 may also include a base ring 330, an annular groove 321 is provided on the edge of the supporting seat 320, the base ring 330 is disposed in the annular groove 321, and the focusing ring 100 is rotatably disposed in the annular groove 321 and is located on the base ring 330 so that the adjustment member 120 of the focusing ring 100 is located on the side away from the film transmission port 311.

[0080] In addition, the focus ring 100 can rotate around the support 320 to cover the area with a larger thickness of the focus ring 100 to the symmetrical position of any etching depth deviating from the standard requirement area on the top, bottom, left and right of the wafer to adjust the wafer etching rate distribution trend.

[0081] Based on the above settings, taking the lower point of the wafer as an abnormal etching depth point as an example, the area with a larger thickness dimension of the focusing ring 100 is placed at an upper point symmetrical to the lower point to increase the etching rate of the lower point and make it higher than the etching rate of the upper point, and adjust the distribution trend of the wafer etching rate, thereby changing the situation where the current machine etching rate and the wafer epitaxial thickness distribution trends are opposite. In this way, the improved focusing ring 100 can improve the uniformity of the thickness distribution of the mesa layer after thinning compared to the standard focusing ring 100.

[0082] The present application also discloses a semiconductor process equipment. Fig.14As shown, the disclosed semiconductor process equipment includes a transfer chamber 200, a suction device 400 and the process chamber 300. The transfer chamber 200 is connected to a film transfer port 311, and the suction device 400 is connected to a suction end 312.

[0083] Optionally, the transfer chamber 200 and the suction device 400 can be respectively connected to opposite areas of the side wall of the process chamber 300 to form a side suction mode. Of course, other distribution forms can also be used, which are not specifically limited here.

[0084] In summary, the embodiment of the present application adopts a special-shaped focusing ring 100 to address the abnormal thickness phenomenon near the source point of the etching wafer, and adjusts the installation position of the thicker area of ​​the focusing ring 100 in combination with the etching rate distribution trend, so as to optimize the thickness uniformity of the GaN mesa layer after thinning and etching, thereby improving the output yield of the Micro-LED chip.

[0085] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present application, ordinary technicians in this field can also make many forms without departing from the purpose of the present application and the scope of protection of the claims, all of which are within the protection of the present application.

Claims

1. A focusing ring, characterized in that: include: A ring body (110) and a fan-shaped adjusting member (120); The ring body (110) is provided with an annular surface (111) at one end along its axis, and the adjusting member (120) is provided on the annular surface (111) and protrudes from the annular surface (111) in the axial direction; The central angle of the adjusting member (120) is less than 180°.

2. The focusing ring according to claim 1, characterized in that: The ring body (110) includes a first inner ring surface (112) and a first outer ring surface (113); the adjusting member (120) includes a second inner ring surface (121) and a second outer ring surface (122); the first inner ring surface (112) is aligned with the second inner ring surface (121); and the first outer ring surface (113) is aligned with the second outer ring surface (122).

3. The focusing ring according to claim 1, characterized in that: The central angle of the adjusting member (120) ranges from 90° to 135°; or, The height of the adjusting member (120) protruding from the annular surface (111) in the axial direction ranges from 2 mm to 5 mm.

4. The focusing ring according to any one of claims 1 to 3, characterized in that: The ring body (110) and the adjusting member (120) are an integral structure.

5. The focusing ring according to any one of claims 1 to 3, characterized in that: The adjusting member (120) is fixedly connected to the ring body (110); Alternatively, the adjusting member (120) is detachably connected to the ring body (110).

6. The focusing ring according to claim 5, characterized in that: One of the annular surface (111) and the surface of the adjusting member (120) facing the ring body (110) is provided with at least one groove (114), and the other is provided with at least one protrusion (123), and the protrusion (123) is assembled correspondingly with the groove (114).

7. The focusing ring according to claim 6, characterized in that: The groove (114) is provided at the connection between the annular surface (111) and the outer peripheral surface of the ring body (110), and extends along the circumference of the ring body (110); The protrusion (123) is provided at the connection between the surface of the adjusting member (120) facing the ring body (110) and the outer peripheral surface of the adjusting member (120), and extends along the circumference of the adjusting member (120).

8. The focusing ring according to claim 1, characterized in that: The adjusting member (120) further comprises a first end surface (124) and a second end surface (125), wherein the first end surface (124) and the second end surface (125) are located at two ends of the adjusting member (120) along its own circumference; A first angle is formed between the first end surface (124) and a surface of the adjusting member (120) facing away from the ring body (110), and the first angle is greater than 90°; A second angle is formed between the second end surface (125) and a surface of the adjusting member (120) facing away from the ring body (110), and the second angle is greater than 90°.

9. A process chamber, characterized in that: include: A cavity (310), a bearing seat (320), and a focusing ring (100) as claimed in any one of claims 1 to 8; The cavity (310) is provided with a film transmission port (311) and a suction end (312), and the film transmission port (311) and the suction end (312) are respectively located on two opposite sides of the cavity (310); The focusing ring (100) is arranged around the supporting seat (320), and the adjusting member (120) of the focusing ring (100) is located at a side away from the film transmission port (311).

10. A semiconductor process equipment, characterized in that: include: A transfer chamber (200), a suction device (400), and a process chamber (300) as claimed in claim 9; The transmission chamber (200) is connected to the film transmission port (311), and the suction device (400) is connected to the suction end (312).

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