Wafer ring cutting device

Abstract

A wafer ring cutting device, comprising: an operation table, the operation table having a wafer mounting position and a supporting shaft, and a wafer to be processed having a first surface and a second surface opposite to each other; a cutting platform, the cutting platform being arranged on the first surface and being adapted to cut a supporting ring on the wafer to be processed; and a UV irradiation platform, the UV irradiation platform being arranged on the supporting shaft on the second surface, and the center of the cutting platform and the center of the UV irradiation platform being concentric in a direction perpendicular to the surface of the wafer to be processed. By arranging the cutting platform and the UV irradiation platform on the first surface and the second surface of the operation table respectively, and the center of the cutting platform and the center of the UV irradiation platform being concentric, the cutting and the UV irradiation are both performed on the same operation table, the transmission error is reduced, the processing cost is lowered, and the UV irradiation platform can accurately irradiate on the supporting ring after cutting, thereby improving the processing accuracy.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing, and in particular to a wafer circumferential cutting device. Background Technology

[0002] In semiconductor manufacturing, wafers often need to be thinned to improve device performance. After wafer thinning, the support rings at the wafer edges also need to be cut and removed. Wafer thinning processes include the Taiko thinning process, which thins the central region of the wafer while leaving the edge regions unthinned, serving as support rings. After thinning the central region, the support rings need to be cut on the wafer, creating a ring-shaped cut between the support rings and the wafer. Because a UV film is attached to the back of the wafer, the support rings will still adhere to the UV film after being ring-cut. A transport device on the wafer processing equipment is needed to move the ring-cut wafer from the upstream station to the de-adhesive stage, where the adhesive adhering to the UV film is removed, facilitating the separation of the support rings from the UV film.

[0003] However, the current wafer circumferential cutting equipment is not accurately positioned, which causes UV irradiation to deviate, thus reducing the precision of the process. Utility Model Content

[0004] The technical problem solved by this invention is how to improve the accuracy of processing.

[0005] To solve the above-mentioned technical problems, this utility model provides a wafer dicing device, comprising: an operating table having a wafer mounting position and a plurality of support shafts, the wafer mounting position being adapted to fix a wafer to be processed within the operating table, and the wafer to be processed having a first surface and a second surface opposite to each other; the support shafts being adapted to fix the wafer mounting position, and the extending direction of the support shafts being perpendicular or parallel to the surface of the wafer to be processed; a dicing platform being disposed on the support shafts of the first surface, and the dicing platform being adapted to cut the support ring on the wafer to be processed from the first surface; and a UV irradiation platform being disposed on the support shafts of the second surface, the UV irradiation platform being adapted to irradiate the second surface of the wafer to be processed with UV light, and the center of the dicing platform and the center of the UV irradiation platform being concentric in a direction perpendicular to the surface of the wafer to be processed.

[0006] Optionally, the UV irradiation platform includes: a UV frame, which is fixedly mounted on the support shaft of the operating table and is arranged around the second surface of the wafer to be processed; a UV lamp, which is wound around the UV frame; and a UV irradiation control unit, which is adapted to control the opening or closing of the UV lamp.

[0007] Optionally, the UV lamp is an ultraviolet irradiation lamp.

[0008] Optionally, the cutting platform includes a cutting head and a cutting control unit, wherein the cutting control unit is adapted to control the cutting head to perform cutting motion according to the cutting trajectory.

[0009] Optionally, the cutting head is a cutting blade.

[0010] Optionally, the operating platform further includes a lifting platform and a lifting track, the lifting platform and the lifting track being disposed between the cutting platform and the UV irradiation platform, the lifting platform being adapted to fix the wafer to be processed, and the lifting platform moving along the lifting track to drive the wafer to be processed to move.

[0011] Optionally, the wafer circumferential dicing apparatus further includes a cleaning unit located on the second side, the cleaning unit including a cleaning nozzle and an air blowing nozzle, wherein the cleaning nozzle is adapted to clean the second side of the wafer to be processed; and the air blowing nozzle is adapted to blow air onto the second side of the wafer to be processed so that the second side of the wafer to be processed is in a dry state.

[0012] Optionally, the wafer circumferential cutting apparatus further includes: a first ring removal unit, the first ring removal unit being located on the first surface, the first ring removal unit being adapted to remove the support ring from the first surface.

[0013] Optionally, the first ring-retrieving unit has a first suction cup, which is adsorbed and connected to the support ring so that the support ring is separated from the wafer to be processed.

[0014] Optionally, the wafer circumferential cutting apparatus further includes a second ring removal unit located on the second surface, the second ring removal unit being adapted to remove the support ring from the second surface.

[0015] Optionally, the second ring-retrieving unit has a second suction cup, which is adsorbed and connected to the support ring to separate the support ring from the wafer to be processed.

[0016] Optionally, the wafer circumferential cutting device further includes a film application unit, which is mounted on the support shaft of the second side to apply a film to the second side of the wafer to be processed.

[0017] Optionally, the film on the second side of the wafer to be processed includes dicing tape.

[0018] Compared with the prior art, the technical solution of this utility model embodiment has the following beneficial effects:

[0019] This invention provides a wafer circumferential dicing device. By setting a dicing platform and a UV irradiation platform on the first and second surfaces of an operating table, respectively, and with the center of the dicing platform and the center of the UV irradiation platform concentric, both dicing and UV irradiation are performed on the same operating table. This avoids the transfer and movement of the wafer to be processed between different platforms, reduces transfer errors and lowers process costs. Furthermore, after dicing, the UV irradiation platform can accurately irradiate the support ring, thereby improving processing accuracy.

[0020] Furthermore, the UV lamp tubes of this invention are wound around the UV frame, and the UV frame is arranged around the second surface of the wafer to be processed, thereby making the UV lamp tubes evenly distributed on the support ring, achieving uniform irradiation of the support ring, and thus improving the processing accuracy.

[0021] Furthermore, the operating platform of this utility model also has a lifting platform and a lifting track, and the lifting platform and the lifting track are arranged between the cutting platform and the UV irradiation platform, so that the wafer to be processed can move up and down between the cutting platform and the UV irradiation platform, realizing the processing isolation of the cutting step and the UV irradiation step, ensuring the safety of processing. Moreover, the up and down movement of the wafer to be processed is a change in the longitudinal trajectory, while the lateral position does not change. Therefore, the area irradiated by the UV lamp will not shift, so that the UV irradiation platform can accurately irradiate the support ring, thereby improving the processing accuracy.

[0022] Furthermore, the operating table of this utility model also has a film-applying unit, a cleaning unit, and a ring-removal unit, so that film application, cutting, cleaning, UV irradiation, and ring removal can all be performed on the same operating table. This avoids the transfer and movement of the wafer to be processed on different platforms, reduces transfer errors and lowers process costs, thereby improving the accuracy of processing. Attached Figure Description

[0023] Figure 1 This is a top view schematic diagram of the working process of a wafer circumferential dicing device;

[0024] Figure 2 This is a top view of the UV platform in a wafer circumferential dicing apparatus.

[0025] Figure 3 This is a side view of the wafer circumferential cutting device in one embodiment of the present invention;

[0026] Figure 4 This is a top view of the UV platform in a wafer circumferential dicing apparatus according to one embodiment of the present invention;

[0027] Figure 5 This is a side view of the wafer circumferential cutting device in another embodiment of the present invention;

[0028] Figure 6 This is a side view of the wafer circumferential cutting device in another embodiment of the present invention;

[0029] Figure 7 This is a side view of the wafer circumferential cutting device in another embodiment of the present invention;

[0030] Figure 8 This is a top view of the wafer to be processed on the wafer circumferential dicing device in one embodiment of the present invention. Detailed Implementation

[0031] It should be noted that the terms "surface" and "on" in this specification are used to describe the relative spatial position and are not limited to whether there is direct contact.

[0032] For the current structure of wafer circumferential dicing equipment, please refer to [reference needed]. Figure 1 The wafer circumferential dicing apparatus includes: a dicing platform 100 adapted to dicing a support ring on a wafer to be processed; a cleaning platform 101 adapted to cleaning the diced wafer; a UV platform 102 adapted to irradiate a UV film on the support ring to separate the UV film from the support ring; and a ring removal platform 103 adapted to remove the diced support ring.

[0033] In some embodiments of this utility model, the process of cutting the support ring on the wafer to be processed is a ring cutting process. The ring cutting process is a process of removing the wafer taiko ring generated during the Taiko thinning process. Specifically, it involves reducing the adhesion between the support ring and the UV film by UV irradiation, thereby facilitating the removal of the support ring.

[0034] In the above scheme, the dicing platform 100, cleaning platform 101, UV platform 102, and ring removal platform 103 in the wafer dicing device are four independent platforms. That is to say, the processing of the wafer to be processed is as follows: the wafer to be processed is transferred to the dicing platform 100 for dicing, then transferred to the cleaning platform 101 for cleaning, then transferred to the UV platform 102 for UV irradiation, and finally transferred to the ring removal platform 103 to remove the support ring. However, the transfer process of the wafer to be processed between different platforms will cause certain errors in mechanical precision, which will cause the position of the wafer to be processed to shift when transferred to the UV platform 102.

[0035] If UV irradiation occurs and fails to fully irradiate the support ring after cutting, instead irradiating the effective area of ​​the wafer to be processed, it will cause the chips on the edge of the wafer to be processed to fall off during subsequent cutting, or even cause huge losses due to cutting.

[0036] To solve the above problems, please refer to Figure 2 Currently, the position of the fixed support ring 104 is fixed by setting a positioning device 105 on the UV platform 102. However, the support ring 104 on the UV platform 102 has been cut and separated from the wafer to be processed by the ring cutting process. Therefore, the method of positioning by pushing the support ring 104 with the positioning device 105 often leads to inaccurate positioning, resulting in UV irradiation deviation.

[0037] To address the aforementioned technical problems, this utility model provides a wafer circumferential dicing device. By setting a dicing platform and a UV irradiation platform on the first and second surfaces of an operating table, respectively, with the center of the dicing platform and the center of the UV irradiation platform concentric, both dicing and UV irradiation are performed on the same operating table. This avoids the transfer and movement of the wafer to be processed between different platforms, reduces transfer errors, and lowers process costs. Furthermore, after dicing, the UV irradiation platform can accurately irradiate the support ring, thereby improving processing accuracy.

[0038] To make the above-mentioned objectives, features and beneficial effects of this utility model more apparent and understandable, the specific embodiments of this utility model will be described in detail below with reference to the accompanying drawings.

[0039] Please refer to Figure 3 The wafer circumferential dicing apparatus includes: an operating table 200, which has a wafer mounting position 2002 and a plurality of support shafts 2001. The wafer mounting position 2002 is adapted to fix a wafer 201 to be processed in the operating table 200, and the wafer 201 to be processed has a first surface a and a second surface b. The support shafts 2001 are adapted to fix the wafer mounting position 2002, and the extending direction of the support shafts 2001 is perpendicular to the surface of the wafer 201 to be processed; a dicing platform 202, which is disposed on the support shafts 2001 on the first surface a, and is adapted to cut the support ring on the wafer 201 to be processed; and a UV irradiation platform 203, which is disposed on the support shafts 2001 on the second surface b, and the center of the dicing platform 202 and the center of the UV irradiation platform 203 are concentric in a direction perpendicular to the surface of the wafer 201 to be processed.

[0040] In some embodiments of this utility model, the first surface a is the upper surface of the wafer 201 to be processed, and the second surface b is the lower surface of the wafer 201 to be processed.

[0041] In other embodiments of this utility model, the first surface is the lower surface of the wafer to be processed, and the second surface is the upper surface of the wafer to be processed.

[0042] The surface of the wafer 201 to be processed is a surface parallel to the first surface a and the second surface b.

[0043] In some embodiments of this utility model, the wafer ring cutting device is suitable for cutting the support ring generated during the TAIKO process thinning process. Specifically, the TAIKO process principle is to selectively thin the central region of the wafer 201 to be processed, while retaining the original thickness of the outer edge (about 3mm), thereby enhancing the mechanical strength of the wafer and reducing the risk of warping and breakage during processing.

[0044] Traditional thinning processes involve uniformly grinding the entire wafer, resulting in a fragile overall structure that is prone to warping or breakage. In contrast, the TAIKO process thins the wafer by retaining the edge portion (i.e., the support ring), which provides support and reduces the risk of deformation of the thinned wafer in subsequent high-temperature processes (such as metal plating). This avoids the overall fragility caused by traditional thinning and reduces breakage during handling and processing.

[0045] In the above scheme, by setting a cutting platform 202 and a UV irradiation platform 203 on the first surface a and the second surface b of an operating table 200 respectively, and the center of the cutting platform 202 and the center of the UV irradiation platform 203 are concentric, the cutting and UV irradiation are both performed on the same operating table 200, avoiding the transfer and movement of the wafer 201 to be processed on different platforms, reducing transfer errors and lowering process costs. After cutting, the UV irradiation platform 203 can accurately irradiate the support ring, thereby improving the processing accuracy.

[0046] Please Figure 3 Based on reference Figure 4 , Figure 4 This is a top view of the UV irradiation platform 203. In some embodiments of this utility model, the UV irradiation platform 203 includes: a UV frame 2031, which is fixedly installed on the support shaft 2001 of the operating table 200, and the UV frame 2031 is arranged around the second surface b of the wafer to be processed 201; a UV lamp 2032, which is wound around the UV frame 2031; and a UV irradiation control unit 2023, which is adapted to control the opening or closing of the UV lamp 2032.

[0047] In a specific embodiment, the UV lamp 2032 is an ultraviolet irradiation lamp.

[0048] The area irradiated by the UV lamp tube 2032 corresponds to the area of ​​the support ring on the wafer to be processed 201.

[0049] The diameter of the UV lamp tube 2032 is equal to the diameter of the support ring on the wafer to be processed 201.

[0050] In other embodiments, the UV frame 2031 is fixedly mounted around a chuck table located on the second side b of the wafer to be processed 201 and is adapted to support the wafer to be processed 201.

[0051] In some embodiments of this utility model, the cutting platform 202 includes a cutting head 2021 and a cutting control unit 2022, wherein the cutting control unit 2022 is adapted to control the cutting head 2021 to perform cutting motion according to the cutting trajectory.

[0052] In a specific embodiment, the cutting head 2021 is a cutting blade 2021.

[0053] In the specific embodiments of this utility model, please continue to refer to... Figure 4 The concentricity of the center of the cutting platform 202 and the center of the UV irradiation platform 203 is characterized by the fact that the center of the UV frame 2031 is concentric with the center of the cutting trajectory 2023. That is, in the direction perpendicular to the surface of the wafer 201 to be processed, the position between the UV frame 2031 and the wafer 201 to be processed remains unchanged, and the position between the cutting head 2021 and the wafer 201 to be processed remains unchanged. This achieves relative fixation of the position of the wafer 201 to be processed, ensures the accuracy of cutting the support ring on the wafer 201 to be processed, and ensures that the UV irradiation platform 203 can accurately irradiate the support ring after cutting, thereby improving the processing accuracy.

[0054] In the above scheme, the UV lamp tube 2032 is wound around the UV frame 2031, and the UV frame 2031 is arranged around the second surface b of the wafer to be processed 201, so that the UV lamp tube 2032 is evenly distributed on the support ring, thereby achieving uniform irradiation of the support ring and improving the processing accuracy.

[0055] Please refer to Figure 5 The extension direction of the support shaft 4001 is parallel to the surface of the wafer 401 to be processed.

[0056] In a specific embodiment, the wafer dicing apparatus includes: an operating table 400, which has a wafer mounting position 4002 and a plurality of support shafts 4001. The wafer mounting position 4002 is adapted to fix a wafer 401 to be processed within the operating table 400, and the wafer 401 to be processed has a first surface a and a second surface b. The support shafts 4001 are adapted to fix the wafer mounting position 4002, and the extending direction of the support shafts 4001 is perpendicular or parallel to the surface of the wafer 401 to be processed; a cutting platform 402, which is disposed on the first surface a and is adapted to cut the support ring on the wafer 401 to be processed; and a UV irradiation platform 403, which is disposed on the support shafts 4001 on the second surface b, and the center of the cutting platform 402 and the center of the UV irradiation platform 403 are concentric in a direction perpendicular to the surface of the wafer 401 to be processed.

[0057] The surface of the wafer 401 to be processed is a surface parallel to the first surface a and the second surface b.

[0058] In some embodiments of this utility model, the cutting platform 402 includes a cutting head 4021 and a cutting control unit 4022, wherein the cutting control unit 4022 is adapted to control the cutting head 4021 to perform cutting motion according to the cutting trajectory.

[0059] In a specific embodiment, the cutting head 4021 is a laser cutting head 4021.

[0060] In some embodiments of this utility model, the UV irradiation platform 403 includes: a UV frame 4031, which is fixedly mounted on the support shaft 4001 of the operating table 400, and the UV frame 4031 is arranged around the second surface b of the wafer to be processed 401; a UV lamp 4032, which is wound around the UV frame 4031; and a UV irradiation control unit 4023, which is adapted to control the opening or closing of the UV lamp 4032.

[0061] in, Figure 5 The wafer circumferential cutting device and Figure 3 The difference between the wafer circumferential cutting device and the wafer circumferential cutting device lies in the different positional relationship between the extension direction of the support shaft and the surface of the wafer to be processed.

[0062] Please Figure 3 Based on reference Figure 6The operating table 200 also includes a lifting platform and a lifting track. The lifting platform and the lifting track are disposed between the cutting platform 202 and the UV irradiation platform 203. The lifting platform is adapted to fix the wafer 201 to be processed, and the lifting platform moves along the lifting track to drive the wafer 201 to be processed to move.

[0063] In other embodiments of this utility model, the lifting track (not shown in the figure) is located on the support shaft, and the operating table also has a slider. The slider is locked in the lifting track and slides along the extension direction of the lifting track. Specifically, when the wafer to be processed needs to be cut, the lifting table moves upward to transfer the wafer to be processed to the cutting platform side. When the wafer to be processed needs to be UV irradiated, the lifting table moves downward to transfer the wafer to be processed to the UV irradiation platform side.

[0064] In some embodiments of this utility model, the wafer circumferential dicing apparatus further includes a cleaning unit located on the second surface b. The cleaning unit includes a cleaning nozzle 204 and an air blowing nozzle 205. The cleaning nozzle 204 is adapted to clean the second surface b of the wafer to be processed 201. The air blowing nozzle 205 is adapted to blow air onto the second surface b of the wafer to be processed 201 so that the second surface b of the wafer to be processed 201 is in a dry state.

[0065] In some embodiments of the present invention, the wafer ring cutting device further includes a first ring removal unit 207, which is located on the first surface a and is adapted to remove the support ring from the first surface a.

[0066] In a specific embodiment, the first ring-retrieving unit 207 has a first suction cup 2071, which is adsorbed and connected to the support ring so that the support ring is separated from the wafer 201 to be processed.

[0067] In some embodiments of this utility model, the wafer dicing apparatus further includes a film-applying unit 206, which is mounted on a support shaft 2001 of the second surface b to apply a film to the second surface b of the wafer 201 to be processed.

[0068] The film on the second side b of the wafer 201 to be processed includes dicing tape.

[0069] Please Figure 3 Based on reference Figure 7The wafer circumferential cutting device further includes a second ring-removing unit 307, which is located on the second surface b and is adapted to remove the support ring from the second surface b.

[0070] In a specific embodiment, the second ring-retrieving unit 307 has a second suction cup 3071, which is adsorbed and connected to the support ring so that the support ring is separated from the wafer to be processed.

[0071] In the above scheme, the operating platform also has a lifting platform and a lifting track, and the lifting platform and the lifting track are set between the cutting platform and the UV irradiation platform, so that the wafer to be processed can move up and down between the cutting platform and the UV irradiation platform, realizing the processing isolation of the cutting step and the UV irradiation step, ensuring the safety of processing. Moreover, the up and down movement of the wafer to be processed is a change in the longitudinal trajectory, while the lateral position does not change. Therefore, the area irradiated by the UV lamp will not shift, so that the UV irradiation platform can accurately irradiate the support ring, thereby improving the processing accuracy.

[0072] In addition, the operating table also has a film application unit, a cleaning unit, and a ring removal unit, so that film application, cutting, cleaning, UV irradiation, and ring removal can all be performed on the same operating table. This avoids the transfer and movement of the wafer to be processed on different platforms, reduces transfer errors and lowers process costs, thereby improving the accuracy of processing.

[0073] In other embodiments of this utility model, Figure 5 The wafer ring cutting apparatus also includes: a lifting platform, a lifting track, a cleaning unit, a first ring-removal unit (or a second ring-removal unit), and a film-applying unit, and the above components are in Figure 5 The position in and in Figure 6 and Figure 7 Same as in Figure 5 and Figure 6 , Figure 7 The only difference lies in the positional relationship between the extension direction of the support shaft and the surface of the wafer to be processed. Therefore, the specific positions of the above components will not be described in this utility model.

[0074] The following is combined with Figures 6 to 8 The working process of the wafer circumferential dicing device is as follows:

[0075] The wafer 201 to be processed is fixed on the operating table 200. The wafer 201 to be processed has a first side a and a second side b. A film-applying unit is used to apply a film to the second side b of the wafer 201 to be processed, so that the second side b of the wafer 201 to be processed is covered by a UV film 2061.

[0076] The wafer 201 to be processed is cut using a cutting platform 202. The cutting head 2021 on the cutting platform 202 moves along the cutting trajectory under the control of the cutting control unit 2022 to separate the support ring 2013 from the wafer 201 to be processed. There is also a cutting channel 2012 region between the support ring 2013 and the wafer 201 to be processed.

[0077] The surface of the wafer 201 to be processed is sprayed with water using the cleaning nozzle 204 on the cleaning unit to remove the residue after cutting. After cleaning, the surface of the wafer 201 to be processed is blown with air using the air blowing nozzle 205 on the cleaning unit to dry the surface of the wafer 201 to avoid the liquid on the wafer 201 from affecting subsequent operations.

[0078] The area of ​​the support ring 2013 on the wafer 201 to be processed is irradiated using a UV irradiation platform to reduce the adhesion of the UV film 2061, which facilitates the subsequent separation of the support ring 2013 from the UV film 2061. Since the above-mentioned film application, cutting, cleaning and UV irradiation are all performed on the same operating table 200, the position of the wafer 201 to be processed does not move, reducing transmission errors and reducing process costs, thereby improving the processing accuracy.

[0079] The support ring 2013 is removed from the first side a or the second side b of the wafer to be processed using the first suction cup 2071 on the first ring removal unit 207 or the second suction cup 3071 on the second ring removal unit 307.

[0080] Although the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A wafer circumferential dicing apparatus, characterized in that, include: An operating table has a wafer mounting position and several support shafts. The wafer mounting position is adapted to fix a wafer to be processed in the operating table, and the wafer to be processed has a first surface and a second surface opposite to each other. The support shafts are adapted to fix the wafer mounting position, and the extension direction of the support shafts is perpendicular or parallel to the surface of the wafer to be processed. A cutting platform is disposed on a support shaft on the first surface, and the cutting platform is adapted to cut the support ring on the wafer to be processed from the first surface; A UV irradiation platform is disposed on a support shaft on the second surface. The UV irradiation platform is adapted to irradiate the second surface of the wafer to be processed with UV light, and the center of the cutting platform and the center of the UV irradiation platform are concentric in a direction perpendicular to the surface of the wafer to be processed.

2. The wafer circumferential dicing apparatus as described in claim 1, characterized in that, The UV irradiation platform includes: a UV frame, which is fixedly mounted on the support shaft of the operating table and is arranged around the second surface of the wafer to be processed; a UV lamp, which is wound around the UV frame; and a UV irradiation control unit, which is adapted to control the opening or closing of the UV lamp.

3. The wafer circumferential dicing apparatus as described in claim 2, characterized in that, The UV lamp is an ultraviolet irradiation lamp.

4. The wafer circumferential dicing apparatus as described in claim 1, characterized in that, The cutting platform includes a cutting head and a cutting control unit, which is adapted to control the cutting head to perform cutting motion according to the cutting trajectory.

5. The wafer circumferential dicing apparatus as described in claim 4, characterized in that, The cutting head is a cutting blade.

6. The wafer circumferential dicing apparatus as described in claim 1, characterized in that, The operating platform also includes a lifting platform and a lifting track. The lifting platform and the lifting track are disposed between the cutting platform and the UV irradiation platform. The lifting platform is adapted to fix the wafer to be processed, and the lifting platform moves along the lifting track to drive the wafer to be processed.

7. The wafer circumferential dicing apparatus as described in claim 1, characterized in that, Also includes: A cleaning unit located on the second side, the cleaning unit including a cleaning nozzle and an air blowing nozzle, wherein the cleaning nozzle is adapted to clean the second side of the wafer to be processed; The air nozzle is adapted to blow air onto the second side of the wafer to be processed, so that the second side of the wafer to be processed is in a dry state.

8. The wafer circumferential dicing apparatus as described in claim 1, characterized in that, Also includes: A first ring-removing unit is located on the first surface and is adapted to remove the support ring from the first surface.

9. The wafer circumferential dicing apparatus as described in claim 8, characterized in that, The first ring-retrieving unit has a first suction cup, which is adsorbed and connected to the support ring so that the support ring is separated from the wafer to be processed.

10. The wafer circumferential dicing apparatus as described in claim 1, characterized in that, Also includes: A second ring-removing unit is located on the second surface and is adapted to remove the support ring from the second surface.

11. The wafer circumferential dicing apparatus as described in claim 10, characterized in that, The second ring-retrieving unit has a second suction cup, which is adsorbed and connected to the support ring so that the support ring is separated from the wafer to be processed.

12. The wafer circumferential dicing apparatus as described in claim 1, characterized in that, Also includes: A film-applying unit is mounted on a support shaft on the second side to apply a film to the second side of the wafer to be processed.

13. The wafer circumferential dicing apparatus as described in claim 12, characterized in that, The film on the second side of the wafer to be processed includes dicing tape.

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