Special gas purification device
Patent Information
- Application Number
- CN202521764518.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-08-19
- Publication Date
- 2026-09-04
- Estimated Expiration
- 2035-08-19
AI Technical Summary
[0004]但是上述的提纯装置仍然存在一些问题,在实际应用中,气体集中冲击催化剂层的某一区域,导致气体与催化剂层接触不均,除氧效率显著下降,从而会降低提纯作业的效率;因此,针对上述问题提出一种特种气体提纯装置
1.本实用新型伺服电机启动后,输出端带动转动轴及外侧的蜗杆转动,蜗轮带动转动管同步转动,最终使输送管在处理筒内部稳定周转,待提纯气体从输送管顶侧的个喷嘴喷出,在输送管周转作用下,气体形成环形喷射流,均匀扩散至处理筒中端的催化剂层,从而避免局部气体聚集或冲刷,确保氧气与钯触媒充分接触,提高了对氢气提纯的效率;
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Figure CN224711856U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of gas purification technology, specifically a special gas purification device. Background Technology
[0002] In the semiconductor manufacturing process, hydrogen is one of the special gases. The hydrogen in the exhaust gas needs to be purified to remove the trace amounts of oxygen it contains, so a purification device is required.
[0003] A Chinese patent with authorization announcement number CN222266631U discloses a high-purity gas purification device, including a purification box, a guide pipe rotatably connected inside a connecting cylinder, a valve fixedly installed inside an inlet pipe, an annular frame fixedly installed inside the purification box, a support frame movably fitted to the outer wall of the annular frame, and activated carbon cotton movably placed on the outer wall of the support frame. When the activated carbon cotton needs to be replaced, opening an electric telescopic rod moves the guide rod and the horizontal plate upward, moving the cover plate away from the inside of the purification box, moving the connecting rod upward, moving the support frame upward, and moving the activated carbon cotton upward, so that the activated carbon cotton is moved out of the purification box, thereby achieving the effect of convenient replacement of activated carbon cotton.
[0004] However, the above-mentioned purification device still has some problems. In practical applications, the gas concentrates and impacts a certain area of the catalyst layer, resulting in uneven contact between the gas and the catalyst layer, and a significant decrease in deoxygenation efficiency, which in turn reduces the efficiency of the purification operation. Therefore, a special gas purification device is proposed to address the above problems. Utility Model Content
[0005] In order to overcome the shortcomings of the existing technology and solve the problems mentioned in the background technology, this utility model proposes a special gas purification device.
[0006] The technical solution adopted by this utility model to solve its technical problem is as follows: A special gas purification device of this utility model includes a base plate. Three support columns are equidistantly fixedly installed on one end of the top side of the base plate. A processing cylinder is installed on the top side of the support columns. An installation plate is installed on the inner wall of the bottom end of the processing cylinder. A rotating tube is rotatably installed through the interior of the installation plate. A worm gear is installed at the bottom end of the rotating tube. A connecting rod is installed on the inner wall of the bottom end of the processing cylinder. A servo motor is installed at one end of the connecting rod. A rotating shaft is installed at the output end of the servo motor. A worm gear is installed on the outer side of the rotating shaft, and the worm wheel meshes with the worm gear. A conveying pipe is installed at the top of the rotating tube, and nine nozzles are equidistantly connected to the top arc surface of the conveying pipe. The servo motor drives the rotating shaft to rotate the worm gear, which in turn drives the worm wheel and the rotating tube meshing with the worm gear to rotate. This ultimately enables the conveying pipe to rotate inside the processing cylinder, so that the gas to be purified can be evenly contacted with the catalyst layer at the middle of the processing cylinder after being sprayed out of the nozzle. This improves the efficiency of hydrogen purification and avoids the problem of insufficient purification caused by uneven gas contact.
[0007] Preferably, an air inlet pipe is connected to the bottom side of the processing cylinder, and the bottom side of the rotating tube is rotatably connected to the top end of the air inlet pipe. An air inlet valve is installed inside one end of the air inlet pipe, and an air outlet is connected to the top side of the processing cylinder, which realizes the stable entry and exit of gas. The air inlet valve can precisely control the gas flow rate and speed entering the processing cylinder, while the air outlet provides an exhaust channel for the purified gas, ensuring the smoothness and controllability of gas flow throughout the purification process.
[0008] Preferably, a catalyst layer is installed on the inner wall of the middle section of the processing cylinder. Heat-conducting mesh plates are installed on the top and bottom sides of the catalyst layer. An installation cavity is installed on the outer side of the processing cylinder, and a heating wire is installed inside the installation cavity. The heating wire is fitted onto the outer side of the processing cylinder, which allows the heat generated by the heating wire to be evenly transferred to the catalyst layer through the heat-conducting mesh plates. This ensures that the catalyst layer is heated evenly, and the evenly heated catalyst layer can better exert its catalytic effect, improve the hydrogen purification effect, and avoid the problem of inconsistent catalytic efficiency caused by excessively high or low local temperatures of the catalyst layer.
[0009] Preferably, a connecting pipe is connected to the top side of the gas outlet, and a gas storage cylinder is installed at the other end of the top side of the base plate. A pump is installed on the top side of the gas storage cylinder. The input end of the pump is connected to one end of the connecting pipe, and the output end of the pump is connected to a straight pipe. One end of the straight pipe is connected to the gas storage cylinder. An exhaust pipe is connected to one side of the bottom of the gas storage cylinder, and an exhaust valve is installed on the outside of the exhaust pipe. This allows the purified hydrogen to be collected into the gas storage cylinder by the action of the pump, facilitating subsequent use and storage. The exhaust pipe is used for the subsequent discharge of hydrogen.
[0010] Preferably, the mounting plate has a groove on the top side, and the inner wall of the groove is fitted with a molecular sieve. The molecular sieve has good water absorption properties. During the hydrogen purification process, the semiconductor tail gas may contain a certain amount of water. The molecular sieve can effectively adsorb this water, avoiding adverse effects of water on the catalyst layer and the purification process, and improving the purity and quality of hydrogen purification.
[0011] Preferably, a control panel is installed on one side of the base plate. The control panel is electrically connected to the electrical components inside the device and is used to operate and control the electrical components inside the device. Through the control panel, the operator can easily control the start and stop of the servo motor, the speed, the heating temperature of the heating wire, the operation of the pump, and the opening and closing of the air inlet valve and the air outlet valve, etc., realizing centralized control of the entire purification device.
[0012] The advantages of this utility model are: 1. After the servo motor of this utility model is started, the output end drives the rotating shaft and the worm gear on the outside to rotate. The worm wheel drives the rotating tube to rotate synchronously, which finally makes the conveying tube rotate stably inside the processing cylinder. The gas to be purified is sprayed out from the nozzles on the top side of the conveying tube. Under the action of the rotation of the conveying tube, the gas forms a ring jet flow and diffuses evenly to the catalyst layer in the middle of the processing cylinder, thereby avoiding local gas accumulation or scouring, ensuring that oxygen and palladium catalyst are in full contact, and improving the efficiency of hydrogen purification. 2. In this invention, the heating wire generates heat when energized, and the heat is transferred to the catalyst layer through the inner wall of the processing cylinder. The heat-conducting mesh plates on the top and bottom sides of the catalyst layer are made of highly thermally conductive metal, which further distributes the heat evenly throughout the entire catalyst layer, avoiding local temperature deviations, ensuring consistent catalytic efficiency, preventing incomplete reaction in low-temperature areas or sintering of palladium catalyst in high-temperature areas, and ensuring that the heating temperature of the heating wire is maintained between 100 and 120 degrees Celsius, without being too high or too low. Attached Figure Description
[0013] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0014] Figure 1 This is a schematic diagram of the intermediate axis side view of the present invention; Figure 2 This is a schematic cross-sectional view of the main body of the purification device; Figure 3 Schematic diagram of the component structure to promote uniform gas distribution; Figure 4 This is a schematic diagram of the catalyst layer uniform heating component structure; Figure 5 This is a schematic diagram of the structure of the purified gas collection assembly.
[0015] In the diagram: 1. Base plate; 2. Support column; 201. Processing cylinder; 202. Mounting plate; 203. Rotating tube; 204. Worm gear; 205. Connecting rod; 206. Servo motor; 207. Rotating shaft; 208. Worm; 209. Conveying pipe; 210. Nozzle; 3. Inlet pipe; 301. Inlet valve; 302. Outlet; 4. Catalyst layer; 401. Heat-conducting mesh plate; 402. Mounting cavity; 403. Heating wire; 5. Connecting pipe; 501. Gas storage cylinder; 502. Pump; 503. Straight pipe; 504. Exhaust pipe; 505. Exhaust valve; 6. Groove; 601. Molecular sieve; 7. Control panel. Detailed Implementation
[0016] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present utility model.
[0017] Please see Figure 1-4 As shown, a special gas purification device includes a base plate 1. Three support columns 2 are fixedly installed at equal intervals on one side of the top of the base plate 1. A processing cylinder 201 is installed on the top side of the support columns 2. An installation plate 202 is installed on the inner wall of the bottom end of the processing cylinder 201. A rotating tube 203 is rotatably installed through the interior of the installation plate 202. A worm gear 204 is installed at the bottom end of the rotating tube 203. A connecting rod 205 is installed on the inner wall of the bottom end of the processing cylinder 201. A servo motor 206 is installed at one end of the connecting rod 205. A rotating shaft 207 is installed at the output end of the servo motor 206. A worm gear 208 is installed on the outer side of the rotating shaft 207, and the worm gear 204 meshes with the worm gear 208. A conveying pipe 209 is installed at the top end of the rotating tube 203. Nine nozzles 210 are equidistantly connected to the top arc surface of the conveying pipe 209. The bottom side of the processing cylinder 201 is connected to an air inlet pipe 3, the bottom side of the rotating pipe 203 is rotatably connected to the top end of the air inlet pipe 3, an air inlet valve 301 is installed inside one end of the air inlet pipe 3, and an air outlet 302 is connected to the top side of the processing cylinder 201. A control panel 7 is installed on one side of the base plate 1. The control panel 7 is electrically connected to the electrical components inside the device and is used to control the operation of the electrical components inside the device. During operation, in practical applications, the gas concentrates and impacts a certain area of the catalyst layer 4, resulting in uneven contact between the gas and the catalyst layer 4, and a significant decrease in deoxygenation efficiency, which in turn reduces the efficiency of the purification operation. The hydrogen to be purified in the semiconductor tail gas contains trace amounts of oxygen. It is introduced into the device through the inlet pipe 3. The operator precisely controls the gas flow rate and velocity by adjusting the inlet valve 301 at one end of the inlet pipe 3 to ensure sufficient residence time of the gas in the processing cylinder 201. The gas enters the rotating tube 203 from the top of the inlet pipe 3 and moves towards... The gas is fed into the conveying pipe 209. After the servo motor 206 starts, its output end drives the rotating shaft 207 and the outer worm gear 208 to rotate. Because the worm gear 208 meshes with the worm wheel 204, the worm wheel 204 drives the rotating pipe 203 to rotate synchronously. Finally, the conveying pipe 209 rotates stably inside the processing cylinder 201. The gas to be purified is ejected from the top side of the conveying pipe 209 through nine nozzles 210. The nozzles 210 are evenly distributed and have the same orifice diameter. Under the rotation of the conveying pipe 209, the gas forms an annular jet stream and diffuses evenly to the catalyst layer 4 in the middle of the processing cylinder 201. The catalyst layer 4 is a palladium catalyst layer, which avoids local gas accumulation or scouring and ensures that oxygen and palladium catalyst are in full contact, thus improving the efficiency of hydrogen purification.
[0018] Please see Figure 1 , 2 As shown in Figures 4 and 5, a catalyst layer 4 is installed on the inner wall of the middle end of the processing cylinder 201. A heat-conducting mesh plate 401 is installed on the top and bottom sides of the catalyst layer 4. An installation cavity 402 is installed on the outer side of the processing cylinder 201. A heating wire 403 is installed inside the installation cavity 402. The heating wire 403 is fitted on the outer side of the processing cylinder 201, located outside the catalyst layer 4. A connecting pipe 5 is connected to the top side of the air outlet 302. An air storage cylinder 501 is installed at the other end of the top side of the base plate 1. A pump 502 is installed on the top side of the air storage cylinder 501. The input end of the pump 502 is connected to one end of the connecting pipe 5. A straight pipe 503 is connected to the output end of the pump 502. One end of the straight pipe 503 is connected to the air storage cylinder 501. An exhaust pipe 504 is connected to one side of the bottom end of the air storage cylinder 501. An exhaust valve 505 is installed on the outside of the exhaust pipe 504. The mounting plate 202 has a groove 6 inside its top side, and the inner wall of the groove 6 is fitted with a molecular sieve 601. During operation, hydrogen is one of the special gases in the semiconductor production process. The hydrogen in the exhaust gas needs to be purified to remove the trace oxygen it contains. Therefore, a purification device is required. The oxygen and hydrogen in the gas react on the surface of the catalyst layer 4. The palladium catalyst completely converts the oxygen into water at the active temperature. At the same time, the heating wire 403 in the mounting cavity 402 outside the processing cylinder 201 is energized and heats up. The heat is transferred to the catalyst layer 4 through the inner wall of the processing cylinder 201. The heat-conducting mesh plates 401 on the top and bottom sides of the catalyst layer 4 are made of high thermal conductivity metal, which further evenly distributes the heat to the entire catalyst layer 4, avoids local temperature deviation, ensures consistent catalytic efficiency, and prevents incomplete reaction in low-temperature areas or sintering of the palladium catalyst in high-temperature areas. It should be noted that the heating temperature of the heating wire 403 needs to ensure that the temperature of the catalyst layer 4 is between 100 and 120 degrees Celsius. It should not be too high or too low. The product generated by the reaction will flow into the bottom of the processing cylinder 201 under the action of gravity and be adsorbed by the molecular sieve 601 in the groove 6 on the top side of the mounting plate 202, reducing the impact of moisture on subsequent processes. Pump 502 is started, providing power to prevent gas from stagnating in the processing cylinder 201. The high-purity hydrogen is purified by the catalyst layer 4 and discharged from the outlet 302 on the top side of the processing cylinder 201. It enters the pump 502 through the connecting pipe 5 and is transported to the storage cylinder 501 through the straight pipe 503. When high-purity hydrogen is needed, the exhaust pipe 504 and exhaust valve 505 at the bottom of the storage cylinder 501 are opened to deliver the hydrogen to the required semiconductor production equipment.
[0019] Working principle: The hydrogen gas to be purified in the semiconductor exhaust contains trace amounts of oxygen. It is introduced into the device through the inlet pipe 3. The operator precisely controls the gas flow rate and velocity by adjusting the inlet valve 301 at one end of the inlet pipe 3 to ensure sufficient residence time of the gas in the processing cylinder 201. The gas enters the rotating pipe 203 from the top of the inlet pipe 3 and is then conveyed upward to the conveying pipe 209. After the servo motor 206 is started, its output end drives the rotating shaft 207 and the worm gear 208 on the outside to rotate. Because the worm gear 208 meshes with the worm wheel 204, The worm gear 204 drives the rotating tube 203 to rotate synchronously, which ultimately makes the conveying tube 209 rotate stably inside the processing cylinder 201. The gas to be purified is ejected from the top side of the conveying tube 209 through nine nozzles 210. The nozzles 210 are evenly distributed and have the same orifice diameter. Under the rotation of the conveying tube 209, the gas forms an annular jet flow and diffuses evenly to the catalyst layer 4 in the middle of the processing cylinder 201. The catalyst layer 4 is a palladium catalyst layer, which avoids local gas accumulation or scouring, ensures that oxygen and palladium catalyst are in full contact, and improves the efficiency of hydrogen purification. Oxygen and hydrogen in the gas react on the surface of catalyst layer 4. The palladium catalyst completely converts oxygen into water at the active temperature. At the same time, the heating wire 403 in the mounting cavity 402 outside the processing cylinder 201 is energized and heats up. The heat is transferred to the catalyst layer 4 through the inner wall of the processing cylinder 201. The heat-conducting mesh plates 401 on the top and bottom sides of the catalyst layer 4 are made of high thermal conductivity metal, which further evenly distributes the heat to the entire catalyst layer 4, avoids local temperature deviation, ensures consistent catalytic efficiency, and prevents incomplete reaction in low-temperature areas or sintering of palladium catalyst in high-temperature areas. It should be noted that the heating temperature of the heating wire 403 needs to ensure that the temperature of the catalyst layer 4 is between 100 and 120 degrees Celsius, and cannot be too high or too low. The product generated by the reaction will flow into the bottom of the processing cylinder 201 under the action of gravity and be adsorbed by the molecular sieve 601 in the groove 6 on the top side of the mounting plate 202, reducing the impact of moisture on subsequent processes. Pump 502 is started, providing power to prevent gas from stagnating in the processing cylinder 201. The high-purity hydrogen is purified by the catalyst layer 4 and discharged from the outlet 302 on the top side of the processing cylinder 201. It enters the pump 502 through the connecting pipe 5 and is transported to the storage cylinder 501 through the straight pipe 503. When high-purity hydrogen is needed, the exhaust pipe 504 and exhaust valve 505 at the bottom of the storage cylinder 501 are opened to deliver the hydrogen to the required semiconductor production equipment.
[0020] In the description of this specification, references to terms such as "an embodiment," "example," "specific example," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.
[0021] The foregoing has shown and described the basic principles, main features, and advantages of this utility model. Those skilled in the art should understand that this utility model is not limited to the above embodiments. The embodiments and descriptions in the specification are merely illustrative of the principles of this utility model. Various changes and modifications can be made to this utility model without departing from its spirit and scope, and all such changes and modifications fall within the scope of the claimed utility model.
Claims
1. A special gas purification device, characterized in that: The system includes a base plate (1), on which three support columns (2) are fixedly installed at equal intervals at one end of the top side. A processing cylinder (201) is installed on the top side of the support columns (2). An installation plate (202) is installed on the inner wall of the bottom end of the processing cylinder (201). A rotating tube (203) is rotatably installed through the inside of the installation plate (202). A worm gear (204) is installed at the bottom end of the rotating tube (203). A connecting rod is installed on the inner wall of the bottom end of the processing cylinder (201). A connecting rod (205) is provided, one end of which is equipped with a servo motor (206). The output end of the servo motor (206) is equipped with a rotating shaft (207). A worm gear (208) is installed on the outside of the rotating shaft (207), and the worm wheel (204) meshes with the worm gear (208). A conveying pipe (209) is installed at the top of the rotating tube (203), and nine nozzles (210) are equidistantly connected to the top arc surface of the conveying pipe (209). The bottom side of the processing cylinder (201) is connected to an air inlet pipe (3), the bottom side of the rotating pipe (203) is rotatably connected to the top end of the air inlet pipe (3), an air inlet valve (301) is installed inside one end of the air inlet pipe (3), and an air outlet (302) is connected to the top side of the processing cylinder (201). A catalyst layer (4) is installed on the inner wall of the middle end of the processing cylinder (201). A heat-conducting mesh plate (401) is installed on the top and bottom sides of the catalyst layer (4). An installation cavity (402) is installed on the outer side of the processing cylinder (201). A heating wire (403) is installed inside the installation cavity (402). The heating wire (403) is fitted on the outer side of the processing cylinder (201) and located outside the catalyst layer (4).
2. The special gas purification device according to claim 1, characterized in that: A connecting pipe (5) is connected to the top side of the air outlet (302). An air storage cylinder (501) is installed at the other end of the top side of the base plate (1). A pump (502) is installed on the top side of the air storage cylinder (501). The input end of the pump (502) is connected to one end of the connecting pipe (5). A straight pipe (503) is connected to the output end of the pump (502). One end of the straight pipe (503) is connected to the air storage cylinder (501). An exhaust pipe (504) is connected to one side of the bottom end of the air storage cylinder (501). An exhaust valve (505) is installed on the outside of the exhaust pipe (504).
3. The special gas purification device according to claim 1, characterized in that: The mounting plate (202) has a groove (6) inside the top side, and the inner wall of the groove (6) is fitted with a molecular sieve (601).
4. The special gas purification device according to claim 1, characterized in that: A control panel (7) is installed on one side of the base plate (1). The control panel (7) is electrically connected to the electrical components inside the device and is used to control the operation of the electrical components inside the device.
Citation Information
Patent Citations
High-purity gas purification device
CN222266631U