85results about How to "Reduce breakdown rate" patented technology

The invention belongs to the technical field of electric porcelain brown glaze toner, and particularly discloses brown glaze. The brown glaze comprises the following raw materials of, in parts by mass, 18-26 parts of potassium feldspar, 6-14 parts of albite, 2-8 parts of Inner Mongolia soil, 10-18 parts of Shaanxi kaolin, 7-12 parts of calcined talc, 0-3 parts of limestone, 25-33 parts of quartz powder, 1-1.6 parts of iron oxide red, 0.4-1.2 parts of chromium oxide and 7-12 parts of manganese oxide. The invention furthermore discloses a production method of the brown glaze. The production method of the brown glaze comprises the following steps of (1) raw material preparation, (2) ball-milling, (3) deironing treatment and (4) aging. According to the brown glaze produced by using the production method, the product yield is improved, the brown glaze has good comprehensive performance, and the production cost is effectively reduced so that the market requirements can be well met.

The invention discloses a metallic film capacitor and relates to the field of electrical devices. The metallic film capacitor solves the technical problem that according to the prior art, after a wound metallic film is pressed, tight attaching between metal electrodes can not be guaranteed, a large amount of air is left, and the probability of air breakdown under high pressure is high. The metallic film capacitor comprises at least two metallic films. Each metallic film comprises a film medium layer and metal electrodes arranged on the film medium layer at intervals, wherein middle margins are arranged between adjacent metal electrodes. Each metal electrode comprises a base body and thickened parts arranged on the base body. The thickened parts of one metallic film correspond to the middle margins on the adjacent metallic film. After the metallic films are wound and pressed, the thickened parts are embedded into the middle margins and tightly attached between the adjacent base bodies. The metallic film capacitor is applied to electrical equipment.

The invention discloses a method and device for account balance update. The method includes that every transaction record corresponding to a target account in the set time length is determined; if the sum of the transaction amount sum of the determined transaction records and the balance of a target account is less than the threshold, some of the transaction records are deleted from the determined transaction records to make sure that the sum of the transaction amount sum of the transaction records after the deletion and the balance of the target account is not less than the threshold. According to the invention, every transaction record of the target account in the set time length is determined at first, compared with the prior art that the balance of the target account is updated in real time, the method provided prevents the waiting caused by lock contention and improves the system response speed; and furthermore, some of the transaction records are deleted from the determined transaction records to make sure that the sum of the transaction amount sum of the transaction records after the deletion and the balance of the target account is not less than the threshold, so that the breakdown probability of the account balance is small.

The invention discloses an optimally-designed test fixture for a power module. The optimally-designed test fixture comprises a substrate, a heavy-current probe and a power loop, wherein a power wiring plug is arranged on the side of the substrate; a signal terminal is arranged on the back surface of the substrate; the heavy-current probe is arranged on the front surface of the substrate; a laminated bus bar is fixed on the substrate; and a power loop is etched on the laminating bus rank. The optimally-designed test fixture is suitable for testing the power module.

The invention discloses a quantum chip port impedance test device and a test method, and belongs to the field of quantum. The accurate and convenient quantum chip port impedance test device comprisesa lock-in amplifier, a relay array switching circuit, a quantum chip, an MCU controller and an upper computer. Each path of the relay array switching circuit is connected with each port of the quantumchip. The relay array switching circuit comprises a double-pole double-throw relay. The double-pole double-throw relay is connected with the MCU controller. The MCU controller is connected with the upper computer. The test method comprises the following steps: outputting and adjusting a signal of the lock-in amplifier to the minimum voltage, outputting and adjusting the signal of the lock-in amplifier to a test voltage value, opening a communication program of the upper computer, connecting ports, needing to be tested, of the quantum chip in sequence, and collecting the voltage data and the current data by using a lock-in amplifier program of the upper computer. The test device and the test method have the advantages of being high in testing efficiency and convenient to operate, and avoiding breakdown of the quantum chip.

The invention discloses a highly-oriented arrangement core-shell structure fiber polyvinylidene fluoride-based composite medium and a preparation method thereof, wherein the composite medium is formedby compounding a core-shell structure BZCT@SiO2NFs filling phase and PVDF, the BZCT@SiO2NFs is a core-shell fiber structure, the core layer is barium calcium zirconate titanate, and the shell layer is silicon oxide. According to the present invention, an inorganic fiber filling phase having a large aspect ratio is prepared by using a sol-gel method and an electrospinning technology, the inorganicfiber filling phase is encapsulated with silica, the obtained material and PVDF are compounded, and quenching treatment is performed to obtain the dense highly-oriented one-dimensional core-shell structure inorganic fiber-PVDF-based composite film; and the highly-oriented arrangement one-dimensional core-shell structure inorganic fiber-PVDF-based composite film medium can significantly improve the dielectric property, the breakdown property and the energy storage property so as to maintain the excellent electrical insulation property and the mechanical properties of the polymer.

The invention provides an aluminum electrolytic capacitor. A basic structure of the aluminum electrolytic capacitor is of a foil-type winding structure and is fabricated by winding a positive electrode foil corroded to form an oxide film, a corroded negative electrode foil and electrolyte paper partitioned between the positive electrode foil and the negative electrode foil to form a core pack, immersing the core pack in an electrolyte, riveting a cover plate and sealing in an aluminum shell. The length of the positive electrode foil is reduced, the winding number of the aluminum electrolytic capacitor can be reduced after winding is completed, so that the volume of the aluminum electrolytic capacitor can be reduced; compared with electrolyte paper selecting general thickness and general density in the prior art, the volume of the aluminum electrolytic capacitor formed by winding can be reduced after winding is completed, the breakdown rate of the aluminum electrolytic capacitor is reduced, meanwhile, the oxidization time of the positive electrode foil during oxidization can be reduced, the efficiency is improved, and the cost is reduced.

The invention discloses a capacitor thin film with high performance, and belongs to the technical field of electronic components. The capacitor thin film with high performance is specifically prepared from, modified polyethylene terephathalate, polyimide, modified diatomite, bisphenol-A epoxy resin, nanometer silicon dioxide, nanometer boron fiber, dimethyl formamide, triallyl cyanurate, polystyrene, diethylene glycol dimethyl ether, antioxidant, heat stabilizer, and ultraviolet light absorber. In actual use, the thin film with high performance shows an excellent stretch-proof property and a high-temperature resistant property; meanwhile, the thin film and a clad layer are adhered and combined tightly and stably mutually, thus residual interior air is reduced, probability of generation of air breakdown is further lowered, and finally the service life of the capacitor can be prolonged by 30% or above.

The invention relates to the microwave heating technology, and discloses a microwave mode exciting and stirring heating method and a heating device thereof. According to the technical scheme of the microwave mode exciting and stirring heating method, N energy feedback ports are divided into M sets and feed back energy to a heating cavity in turn. The microwave mode exciting and stirring heating device comprises the heating cavity, the N energy feedback ports, a microwave source and a control system. The microwave source is connected with the energy feedback ports, and feeds back the energy to the heating cavity through the energy feedback ports. The control system is used for controlling the feedback energy of the heating cavity. The N energy feedback ports are divided into the M sets and feed back the energy to the heating cavity in turn, wherein N and M are positive integers, N is larger than or equal to 2, and M is larger than or equal to 2. According to the microwave mode exciting and stirring heating method and the heating device thereof, by switching the energy feedback ports feeding back the energy to the heating cavity, the microwave excitation modes in the heating cavity are changed, the different microwave excitation modes can excite different electric field modes in the heating cavity, namely, the number of the electric field modes in the heating cavity is increased, and the uniformity of electric field distribution and the heating uniformity are improved. The microwave mode exciting and stirring heating method and the heating device thereof are suitable for industrial heating application of microwaves.

The invention discloses a static electricity elimination reminding device which comprises a shell, an RC network, a microprocessor, a static electricity removing board, a wrist strap, a relay K1, a relay K2, an indicator light and a knob switch. The RC network and the microprocessor are installed inside the shell, the indicator light and the knob switch are installed on the outer side of the shell, the static electricity removing board is connected with one end in the middle of a resistor and a capacitor of the RC network, the other end of the resistor is connected with a power source, and the other end of the capacitor is grounded. The wrist strap is connected to the end, connected with the RC network, of the static electricity removing board through a wire. The static electricity elimination reminding device solves the ignorance problem of a traditional static electricity device, greatly improves the use ratio of an electrostatic device in a factory, and reduces economic losses caused by static electricity in the production process.

The invention discloses a magnetic multilayer structure, a magnetic junction device, a magnetic random access memory device and an auxiliary writing and direct reading method of the magnetic random access memory device. The magnetic multilayer structure comprises an electromagnetism layer and an insulation auxiliary layer, wherein the electromagnetism layer and the insulation auxiliary layer forma laminated structure; a plurality of micro-conductive channels are arranged in the insulating auxiliary layer, and are used for the passing of writing and reading currents; the magnetization direction of the insulating auxiliary layer is perpendicular to or parallel to the layer plane. In the absence of an electric field, the electromagnetism layer is in a paramagnetic state; the magnetic multilayer structure is arranged in an electric field, and the electromagnetism layer can achieve conversion between a paramagnetic state and a ferromagnetic state. Under the regulation and control of an electric field, the electro-magnetic layer is converted into a ferromagnetic state from a paramagnetic state, and the ferromagnetic state of the electro-magnetic layer is utilized to simultaneously exchange and couple with the insulating auxiliary layer and the magnetic free layer of the magnetic junction to assist the magnetic free layer to turn over, so that the purpose of reducing the current density required by the turning over of the magnetic free layer is achieved.

The invention belongs to the technical field of vehicle shock absorption, and particularly relates to an impact acceleration sensitive valve. The impact acceleration sensitive valve is installed on abottom valve between a working cavity and a compensation cavity of the shock absorber, and adopts a spring mass system composed of a compressed spring and a slide block for sensing impact loads on a vehicle from the pavement, and thus the purpose of judging the working condition is achieved; a hole between the slide block and a valve rod is utilized for achieving communication of a high-pressure cavity of the shock absorber, unloading of the high-pressure cavity of the shock absorber can be achieved when the shock absorber meets intense impact of the pavement, so that impact transmitted to a vehicle body by the shock absorber is reduced, and the requirement of different working conditions for damping is met. According to the impact acceleration sensitive valve, a favorable condition is created for symmetric design of damping of the shock absorber. Compression damping is increased, stretching damping is lowered, the improvement of the posture of a vehicle is facilitated, a suspension isrestored in time, and the smoothness and handling stability of the vehicle are comprehensively improved. The impact acceleration sense valve is compact in structure, high in manufacturability and controllable in cost.

The invention discloses a GaN-based green light LED structure with a p type buffering layer and a growing method of the GaN-based green light LED structure. The GaN-based green light LED structure comprises a sapphire substrate layer, a GaN nucleating layer, a non-doping GaN layer, an n type GaN layer, a low-temperature InxGa1-xN/GaN multiple quantum well layer and a high-temperature p type GaN layer from bottom to top in sequence. The GaN-based green light LED structure is characterized in that the p type buffering layer grows between the low-temperature InxGa1-xN/GaN multiple quantum well layer and the high-temperature p type GaN layer. The p type buffering layer is composed of a plurality of p type InyGa1-yN thin layers with gradually changing components, and the growing temperature gradually increases from bottom to top. Compared with a traditional epitaxial structure, the gradual temperature changing can be effectively achieved, the damage to a low-temperature InGaN quantum well structure when the high-temperature p type GaN layer grows is lowered, the antistatic ability of an epitaxial wafer is improved, and therefore the breakdown rate of a chip is reduced, and the light emitting efficiency of the chip is improved.

The invention discloses a method for pressing a winding stator iron core of a pole motor in a machine base. Specifically, a lower press mounting die assembly (5) is arranged on a push trolley (6); in a press mounting process, the winding stator iron core (3) is placed on the lower press mounting die assembly, then an upper press mounting die assembly (2) is placed on the winding stator iron core (3), a lead wire is pulled out of the kidney-shaped hole of the upper press mounting die assembly (2) and placed in the upper press mounting die assembly (2), the machine base (4) is sleeved on the press mounting die assemblies, and finally the push trolley provided with a tool and a workpiece is pushed below a single column vertical hydraulic machine (1) to be pressed and mounted. Due to the fact that in the press mounting process, an upper locating guide structure and a lower locating guide structure are adopted and the machine base is pressed towards the winding stator iron core, the breakdown rate generated in the process is zero, the assembling quality that the winding stator iron core of the pole motor is pressed in the machine base is greatly improved, therefore, the performance of the generated motor is made to be capable of meeting design requirements, meanwhile, production efficiency is improved, and the labor intensity of workers is reduced.

The invention discloses a resistance trigger type vacuum arc ion source device. The resistance trigger type vacuum arc ion source device comprises a positive electrode (1), a negative electrode (2), a trigger electrode (3), a negative electrode-trigger electrode insulator (4), a trigger resistor (5) and a negative electrode fixing conductive connector (6) connected to the lower end of the negative electrode (2), the positive electrode (1) is composed of a hollow cylindrical positive electrode supporting body (11) and an annular positive electrode (12) connected to the upper end of the positive electrode supporting body (11), and the trigger resistor (5), the trigger electrode (3), the negative electrode-trigger electrode insulator (4) and the negative electrode (2) are arranged in the positive electrode supporting body (11) from exterior to interior in sequence. The trigger resistor is arranged in the vacuum arc ion source device, the structure is compact, the size is small, the installing space is saved, the electrical contact and insulating reliability are guaranteed, and distribution parameters can be effectively improved.

The embodiment of the invention discloses a semiconductor device and a production method thereof. The semiconductor device comprises a substrate, a plurality of semiconductor layers located at one side of the substrate, a source electrode, a grid electrode, a drain electrode and a field plate structure, wherein the source electrode, the grid electrode, the drain electrode and the field plate structure are located on the side, away from the substrate, of the multiple semiconductor layers, and the field plate structure includes a main body part and a first extension part; the main body part is positioned between the grid electrode and the drain electrode; and the first extension part is connected with the main body part, is positioned on one side, far away from the multiple semiconductor layer, of the grid electrode, and is at least partially overlapped with the grid electrode. By adopting the technical scheme, the first extension part is at least partially overlapped with the grid electrode, the field plate structure extends towards one side of the grid electrode, a modulation effect of the field plate structure on an electric field is improved, electric field accumulation of the side, close to the drain electrode, of the grid electrode is reduced, a breakdown probability of the side, close to the drain electrode, of the grid electrode is decreased, and meanwhile, the field plate structure is arranged to extend towards one side of the grid electrode; and an opposite area between the field plate structure and the grid electrode is increased, the stability of the field plate structure is improved, and the reliability of the semiconductor device is increased.

The invention discloses a universal PTC liquid heater comprising a round tube-shaped metal shell, a PTC heating core and a sealing flange, wherein one end of the metal shell in contact with water is welded and sealed, and the sealing flange is installed on the other end of the metal shell; the PTC heating core is arranged in the metal shell, the PTC heating core comprises a PTC heating element, electrode slices and insulating films, the PTC heating element is formed by connecting one or more special high temperature resistant and high voltage resistant PTC ceramic pieces in parallel, the electrode slices are adhered on the two side faces of the PTC ceramic pieces by heat conduction silica gel, conducting wires or connectors are connected to conducting wire connection portions of the electrode slices, the insulating films are wrapped at the outside of the electrode slices, heat conduction bars are respectively arranged on the two sides of the insulating films, the heat conduction bars take the shape of aluminum semicircular strips and are combined into cylinder shapes with the PTC heating core, and the size of the cylinder is matched with the inside diameter of the metal shell. Theuniversal PTC liquid heater disclosed by the invention is used for heating general liquids, and has the characteristics of long service life, low attenuation rate, dry burning, easy installation and low breakdown rate.

The invention discloses a conductive rolling bearing with a nickel graphite conductive coating and a preparation method. The rolling bearing comprises a bearing inner ring, a bearing outer ring, a rolling body and a retainer, the rolling body is installed between the bearing inner ring and the bearing outer ring through the retainer, and the surfaces of raceways of the bearing inner ring and the bearing outer ring are each coated with the nickel graphite conductive coating or the outer surface of the rolling body is coated with the nickel graphite conductive coating. Compared with a traditional bearing, the conductive rolling bearing has the advantages of being good in conductivity, high in bearing capacity, resistant to high-temperature molten salt corrosion, good in lubricating performance and the like.

The invention relates to the technical field of corona treatment, in particular to a protective film corona treatment device capable of automatically adjusting the corona distance. The protective filmcorona treatment device comprises a rack, wherein the rack is provided with an upper traction roller, a forward corona roller, a forward corona electrode set, a lower traction device, a reverse corona roller and a reverse corona electrode set, wherein a transparent upper auxiliary roller and a transparent lower auxiliary roller are arranged on the rack, magnetostrictive sensors are arranged in the upper auxiliary roller and the lower auxiliary roller, and a micro magnetic block is arranged on the protective film. A circumferential magnetic field generated by a waveguide tube in the magnetostrictive sensors can be intersected with a magnetic field generated by the micro magnetic block, the pulse signals received by an electronic chamber are converted into corresponding electric signals, asignal processing system is used for identifying and calculating the width characteristic of the protective film according to the distribution of the electric signals, the number of the required corona electrodes is automatically adjusted by a control system, so that the energy consumption is effectively reduced, and the problem that the protective film corona treatment device in the prior art cannot adapt to protective films of different sizes is solved.

The invention provides a magnetic memory cell, which comprises a bottom electrode, a top electrode and a laminated structure located between the bottom electrode and the top electrode, and is characterized in that the laminated structure comprises a reference layer, a barrier layer, a free layer, a non-magnetic isolation layer and a phase change layer which are sequentially stacked, wherein the phase change layer changes between an antiferromagnetic phase and a ferromagnetic phase according to the phase change temperature, and when the phase change layer is a ferromagnetic phase, a bias magnetic field is provided for the free layer, so that the magnetization direction of the free layer deviates from the direction collinear with the magnetization direction of the reference layer; and the non-magnetic isolation layer is used for preventing the phase change layer and the free layer from generating magnetic coupling. According to the invention, the critical overturning current of the freelayer can be reduced.

The invention discloses an internal tandem type self-healing metallized film which comprises a base film. A base film blank area is arranged on the base film, metal coating flat areas are laid on the portions, on the two sides of the base film blank area, of the base film respectively, a reserved edge thickening area is arranged in the metal coating flat area on one side, and the metal coating flat area on the other side is internally provided with ametal coating tandem conductive thickening area. The capacitor comprises two capacitor polar plates, the two capacitor polar plates are provided with the self-healing metallized films, heating of the capacitor can be reduced, resistance and loss are reduced, and the service life of the capacitor is prolonged. The widened marginal area and the blank area increase the size of the marginal area and the blank area, ensure the insulation distance, reduce the probability of breakdown between the films, increase the reliability of the capacitor and prolong the service life of the metallized film.