Magnetic multilayer structure, magnetic junction device, magnetic random access memory device and auxiliary writing and direct reading method thereof

Abstract

The invention discloses a magnetic multilayer structure, a magnetic junction device, a magnetic random access memory device and an auxiliary writing and direct reading method of the magnetic random access memory device. The magnetic multilayer structure comprises an electromagnetism layer and an insulation auxiliary layer, wherein the electromagnetism layer and the insulation auxiliary layer forma laminated structure; a plurality of micro-conductive channels are arranged in the insulating auxiliary layer, and are used for the passing of writing and reading currents; the magnetization direction of the insulating auxiliary layer is perpendicular to or parallel to the layer plane. In the absence of an electric field, the electromagnetism layer is in a paramagnetic state; the magnetic multilayer structure is arranged in an electric field, and the electromagnetism layer can achieve conversion between a paramagnetic state and a ferromagnetic state. Under the regulation and control of an electric field, the electro-magnetic layer is converted into a ferromagnetic state from a paramagnetic state, and the ferromagnetic state of the electro-magnetic layer is utilized to simultaneously exchange and couple with the insulating auxiliary layer and the magnetic free layer of the magnetic junction to assist the magnetic free layer to turn over, so that the purpose of reducing the current density required by the turning over of the magnetic free layer is achieved.

Description

technical field [0001] The invention belongs to the technical field of devices, circuits and applications composed of magnetic materials or structures, and in particular relates to a magnetic multilayer structure, a magnetic junction device, a magnetic random storage device and its auxiliary writing and direct reading methods. Background technique [0002] A magnetic tunnel junction (Magnetic Tunnel junction, MTJ) generally consists of two layers of ferromagnetic metal and a non-magnetic barrier layer; wherein, the ferromagnetic metal can be iron, cobalt, or nickel. One of the two layers of ferromagnetic metal is a magnetic free layer, which is easy to change its magnetization state by an external magnetic field; the other layer is a magnetic fixed layer, which is not easy to change the magnetization state by a magnetic field, which can generally be achieved by increasing the thickness or using exchange coupling. The effect is realized. The resistance of the magnetic tunnel...

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Problems solved by technology

However, due to the large spin polarization current required to flip the magnetic free layer, the input current density is 10 6 to 10 7 A / cm 2 Between; the larger current density still limits the further improvement of storage density, and there is also the problem of higher energy consumption

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