Semiconductor device and production method thereof

Abstract

The embodiment of the invention discloses a semiconductor device and a production method thereof. The semiconductor device comprises a substrate, a plurality of semiconductor layers located at one side of the substrate, a source electrode, a grid electrode, a drain electrode and a field plate structure, wherein the source electrode, the grid electrode, the drain electrode and the field plate structure are located on the side, away from the substrate, of the multiple semiconductor layers, and the field plate structure includes a main body part and a first extension part; the main body part is positioned between the grid electrode and the drain electrode; and the first extension part is connected with the main body part, is positioned on one side, far away from the multiple semiconductor layer, of the grid electrode, and is at least partially overlapped with the grid electrode. By adopting the technical scheme, the first extension part is at least partially overlapped with the grid electrode, the field plate structure extends towards one side of the grid electrode, a modulation effect of the field plate structure on an electric field is improved, electric field accumulation of the side, close to the drain electrode, of the grid electrode is reduced, a breakdown probability of the side, close to the drain electrode, of the grid electrode is decreased, and meanwhile, the field plate structure is arranged to extend towards one side of the grid electrode; and an opposite area between the field plate structure and the grid electrode is increased, the stability of the field plate structure is improved, and the reliability of the semiconductor device is increased.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of semiconductors, and in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] Gallium nitride, a semiconductor material, has become a current research hotspot due to its characteristics of large band gap, high electron saturation drift velocity, high breakdown field strength, and good thermal conductivity. [0003] Due to the strong two-dimensional electron gas in the AlGaN / GaN heterostructure, the high electron mobility transistor (High Electron Mobility Transistor; HEMT) formed by the AlGaN / GaN heterostructure is usually a depletion device. However, in the actual working process of the device, the distribution of the electric field lines in the depletion region of the barrier layer is uneven, and most of the electric field lines are often collected at the edge of the gate close to the drain, where the electric field intensity is quite...

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Problems solved by technology

[0005] In view of this, an embodiment of the present invention provides a semiconductor device and a manufacturing

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