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Magnetic memory cell and magnetic memory

A magnetic storage and non-magnetic technology, applied in static memory, digital memory information, information storage, etc., can solve the problems of MTJ barrier layer breakdown, high power consumption, and damaged devices, so as to reduce the write current and increase the self- Rotation transfer torque, the effect of protecting the device

Active Publication Date: 2020-12-25
CETHIK GRP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In the existing STT-MRAM memory unit, the critical switching current of the MTJ free layer is relatively large, so a large write current is required, and a large write current will lead to high power consumption, and it is also easy to cause the MTJ barrier layer to be hit. wear, damage the device

Method used

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  • Magnetic memory cell and magnetic memory
  • Magnetic memory cell and magnetic memory
  • Magnetic memory cell and magnetic memory

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Embodiment Construction

[0024] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is only some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0025] An embodiment of the present invention provides a magnetic storage unit, such as figure 2 As shown, it includes: a bottom electrode 11, a top electrode 12, and a stacked structure 13 located between the bottom electrode 11 and the top electrode 12. The stacked structure 13 includes a reference layer 131, a barrier layer 132, and a sta...

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Abstract

The invention provides a magnetic memory cell, which comprises a bottom electrode, a top electrode and a laminated structure located between the bottom electrode and the top electrode, and is characterized in that the laminated structure comprises a reference layer, a barrier layer, a free layer, a non-magnetic isolation layer and a phase change layer which are sequentially stacked, wherein the phase change layer changes between an antiferromagnetic phase and a ferromagnetic phase according to the phase change temperature, and when the phase change layer is a ferromagnetic phase, a bias magnetic field is provided for the free layer, so that the magnetization direction of the free layer deviates from the direction collinear with the magnetization direction of the reference layer; and the non-magnetic isolation layer is used for preventing the phase change layer and the free layer from generating magnetic coupling. According to the invention, the critical overturning current of the freelayer can be reduced.

Description

technical field [0001] The invention relates to the technical field of magnetic memory, in particular to a magnetic memory unit and a magnetic memory. Background technique [0002] Magnetic Random Access Memory (MRAM) is considered to be the future solid-state non-volatile memory, which has the characteristics of high-speed reading and writing, large capacity and low energy consumption. Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM), which utilizes spin current to realize magnetic moment reversal, is a common implementation form. [0003] The traditional structure of the storage unit of STT-MRAM is as follows figure 1 As shown, including the top electrode, the bottom electrode and the MTJ between them, during the STT-MRAM writing process, since the magnetization directions of the free layer and the reference layer are collinear, the initial stage needs to be generated by thermal disturbances in the free layer Random small angular deflection with a small init...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/16
CPCG11C11/161
Inventor 宫俊录何世坤
Owner CETHIK GRP
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