Magnetic random access memory data writing method and writing device

A magnetic random access memory and a technology for writing data, applied in the field of data writing method and writing device of magnetic random access memory, can solve the problems of affecting SOT-MRAM data writing, magnetic random access memory damage, affecting SOT-MRAM application, etc.

Pending Publication Date: 2021-11-12
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when SOT-MRAM is writing data, because its critical switching current is still large, it will cause damage to ...

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  • Magnetic random access memory data writing method and writing device
  • Magnetic random access memory data writing method and writing device
  • Magnetic random access memory data writing method and writing device

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Embodiment Construction

[0036] The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0037] In the following description, a lot of specific details are set forth in order to fully understand the application, but the application can also be implemented in other ways different from those described here, and those skilled in the art can do without violating the connotation of the application. By analogy, the present application is therefore not limited by the specific embodiments disclosed below.

[0038] Secondly, the present application is described in detail in comb...

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Abstract

The embodiment of the invention discloses a magnetic random access memory data writing method and device, and the method comprises the steps: inputting a control signal to a magnetic random access memory, so as to write data into the magnetic random access memory; wherein the control signal comprises a current signal and a magnetic field signal, and the magnetic field signal pulse and the current signal pulse are synchronous, so that when data are written into the magnetic random access memory, the magnetic field signal can cooperate with the current signal to promote the free layer magnetic moment to overturn, so that the free layer magnetic moment is reversely parallel to the fixed layer magnetic moment, and then the magnetic moment of the free layer can be promoted to overturn; the free layer magnetic moment is parallel to the fixed layer magnetic moment, and the magnetic field signal can cooperate with the current signal in the process of promoting the overturning of the free layer magnetic moment, so that when the data writing method is used for data writing, the critical flipping current for promoting the flipping of the free layer magnetic moment can be reduced to a certain extent, which facilitates the promotion of the practical application of the magnetic random access memory.

Description

technical field [0001] The present application relates to the technical field of memory, and in particular to a data writing method and a writing device of a magnetic random access memory. Background technique [0002] Magnetic Random Access Memory (MRAM) is a random access memory that stores data with magnetoresistive properties. characteristics and has good application prospects. [0003] Among them, spin-orbit torque magnetic random access memory (Spin-orbit Torque MRAM, referred to as SOT-MRAM) has received widespread attention due to its better reliability and longer life. However, when SOT-MRAM is writing data, because its critical switching current is still large, it will cause damage to the magnetic random access memory, affect the data writing of SOT-MRAM, and thus affect the practical application of SOT-MRAM. Therefore, providing a data writing method capable of reducing the critical switching current of the MRAM has become a research focus of those skilled in th...

Claims

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Application Information

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IPC IPC(8): G11C11/16
CPCG11C11/1675
Inventor 李泠刘东阳卢年端王嘉玮耿玓刘明
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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