Magnetic random access memory unit and data writing method thereof

Abstract

The invention provides a magnetic random access memory unit and a data writing method thereof. The magnetic random access memory unit comprises a spin orbital moment layer and at least one magnetic tunnel junction arranged on the spin orbital moment layer. The data writing method comprises: inputting a selection voltage to a magnetic tunnel junction of to-be-written data in the at least one magnetic tunnel junction; inputting writing current into the spin orbit moment layer at a preset time interval to enable the resistance state of the magnetic tunnel junction to correspond to-be-written data, wherein the writing current is smaller than the critical overturning current of the magnetic tunnel junction and larger than the critical overturning current of the magnetic tunnel junction when theselection voltage is input; and stopping inputting the selection voltage and the writing current in sequence. According to the method, deterministic overturning of the magnetic tunnel junction magnetic moment can be ensured, and the storage density is improved.

Description

technical field [0001] The invention relates to the technical field of magnetic memory, in particular to a magnetic random memory unit and a data writing method thereof. Background technique [0002] With the continuous shrinking of semiconductor process dimensions, Moore's Law slows down, and the increase of leakage current and interconnection delay become the bottleneck of traditional CMOS memory. Finding the solution of the new generation memory technology has become the focus of integrated circuit research, and the magnetic random access memory unit has received extensive attention. Compared with traditional devices, Magnetic Random Access Memory (MRAM) has the advantages of unlimited erasing times, non-volatility, fast read and write speed, and radiation resistance. Ideal for volatile memory and in-memory computing. [0003] For a long time, the writing mechanism has been the main technical bottleneck restricting the development of MRAM. Currently, the mainstream ele...

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Problems solved by technology

However, the spin-orbit moment writing method requires an external magnetic field in the in-plane direction, which will increase the complexity of the circuit. If an antiferromagnetic (Antiferromagnetic, AFM) film is used to generate an exchange bias field (Exchange Bias Field, EB) replaces the external magnetic field to achieve non-magnetic field switching. Since the generated EB is small, the critical switching current is large and the power consumption is large

And the storage unit of SOT-MRAM has three ports, and each MTJ needs to have two access control first transistors, and the storage density is low

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