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Magnetic tunnel junction with low power consumption and high storage density

A magnetic tunnel junction and low power consumption technology, applied in the field of magnetic tunnel junction, can solve the problems of limiting the overall storage density, large power consumption, large power supply unit area, etc., to reduce the critical switching current, reduce power consumption, and improve magnetic switching speed effect

Pending Publication Date: 2022-03-11
CETHIK GRP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to provide sufficient inversion current, under the current power supply capacity of transistors, a large power supply unit area is required, which is much larger than the area of ​​MTJ devices, which limits the overall storage density. At the same time, the higher the storage density of STT-MRAM, the greater the power consumption

Method used

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  • Magnetic tunnel junction with low power consumption and high storage density
  • Magnetic tunnel junction with low power consumption and high storage density
  • Magnetic tunnel junction with low power consumption and high storage density

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Embodiment Construction

[0015] The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some, not all, embodiments of the application. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0016] It should be noted that, unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the technical field of the application. The terms used herein in the description of the application are only for the purpose of describing specific embodiments, and are not intended to limit the application.

[0017] figure 1 It is a structural schematic diagram of a magnetic tunnel junction in the prior art, including a free la...

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Abstract

The invention discloses a magnetic tunnel junction with low power consumption and high storage density, which comprises a free layer and a barrier layer, an interface is generated between the free layer and the barrier layer, and an annular defect structure is formed by etching the edge of the interface. The structure is provided with the annular defect structure at the interface of the free layer and the barrier layer, and the interface induced perpendicular anisotropy of the annular defect structure is low, so that the overall perpendicular anisotropy of the free layer is reduced, and meanwhile, an in-plane magnetization direction is formed at the edge of the magnetic tunnel junction, so that the critical flip current is reduced; and the magnetic turnover speed, the storage density and the operation speed are improved, and the power consumption is reduced.

Description

technical field [0001] The invention belongs to the technical field of memory, and in particular relates to a magnetic tunnel junction with low power consumption and high storage density. Background technique [0002] STT-MRAM (Spin Transfer Torque-Magnetoresistive Random Access Memory) is a new type of non-volatile memory, using Magnetic Tunnel Junction (MTJ) as a storage unit, with nanosecond-level high-speed read and write, and almost unlimited use Excellent characteristics such as lifespan and data storage time of more than 10 years have great potential in future storage applications. However, as the hardware requirements for memory performance are getting higher and higher, the application of STT-MRAM in large-capacity and ultra-low-power memory chips still faces challenges. As the basic storage unit of STT-MRAM, the magnetic tunnel junction (MTJ) directly determines its storage performance. The bottleneck of increasing the storage density of STT-MRAM is mainly due to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/02H01L43/08G11C11/16H10N50/80H10N50/10
CPCG11C11/161H10N50/80H10N50/10
Inventor 孟皓迟克群
Owner CETHIK GRP
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