Reactor for treating gaseous pollutants, and head assembly thereof

Abstract

A head assembly, comprising an upper cover assembly, one or more plasma modules, and one or more guide pipe assemblies, wherein the upper cover assembly is provided above a plasma reaction area; the upper cover assembly comprises a top plate and a bottom plate; an area for accommodating a cooling fluid is defined between the top plate and the bottom plate; the bottom plate comprises one or more openings; the plasma module is connected to the plasma reaction area by means of the openings; the plasma module comprises a microwave source that generates a microwave oscillation, a waveguide assembly, and a resonant cavity; the microwave oscillation reacts with a reactive gas; and the guide pipe assembly is configured to guide to the plasma reaction area an effluent from a semiconductor process.

Description

[0001]

Invention Name

[0002] [Technical Field] The present invention relates to a reactor for treating gaseous pollutants and a head assembly thereof, and more particularly to a reactor for treating effluent from a semiconductor process and a head assembly thereof.

[0003] [Prior Art] Exhaust gases from semiconductor manufacturing processes contain a variety of chemicals that are harmful to humans and the environment. Common exhaust gas treatment equipment includes combustion, plasma, water scrubbing, and catalytic types. For pollutants such as silane, arsenic, and phosphine produced during the chemical vapor deposition (CVD) process, combustion-type exhaust gas treatment equipment is often used. Traditional commercial products include the ES CAPE model from DAS or the Spectra series from Edwards. Furthermore, plasma-type exhaust gas treatment equipment is suitable for treating perfluorinated compounds (PFCs) such as CF4 and other gases that contribute to global warming, such as SF6, NF3, and N20. Traditional commercial products include the Proteus series from Edwards. This can also be seen in U.S. Patents US20220088529A1, US1,143,0638B2, US20180243687A1, and US20140079617A1. Common plasma-type exhaust gas treatment equipment mostly adopts a top air intake design, and the plasma reaction also occurs at the top of the reactor, causing the upper cover or upper outer wall of the reactor to have high temperatures, which can easily cause danger to personnel during operation.

[0004] Summary of the Invention: The present invention discloses a head assembly for use in a plasma reactor for treating gaseous pollutants. The head assembly comprises a top cover assembly, one or more plasma modules, and one or more guide pipe assemblies. The top cover assembly is positioned above a plasma reaction region and includes a top plate and a bottom plate. The top and bottom plates define an area for receiving a cooling fluid. The bottom plate includes one or more openings. The plasma module is connected to the plasma reaction region through the opening. The plasma module includes a microwave source for generating microwave oscillations, a waveguide assembly coupled to the microwave source for transmitting the microwave oscillations, and a resonant cavity coupled to the waveguide assembly for transmitting the microwave oscillations substantially in a waveguide direction. The resonant cavity includes a first chamber proximal to the waveguide assembly and a second chamber distal to the waveguide assembly. The second chamber receives the microwave oscillations passing through the first chamber. The microwave oscillations react with a reactant gas to form a plasma field provided to the plasma reaction region. The plasma field is generated in a first direction. The guiding conduit assembly is configured to guide effluent from a semiconductor process to the plasma reaction region. The effluent has a flow direction in a second direction, the first direction and the second direction intersecting at an angle. The one or more guiding conduit assemblies are configured to generate a cyclone in the plasma field. The present invention also discloses a reactor for treating gaseous pollutants, comprising one or more inlet modules, one or more plasma modules, a reaction module, and a cooling module. The inlet modules each include one or more guiding conduit assemblies configured to guide effluent from a semiconductor process. The plasma module is connected to the inlet modules and each includes a microwave source for generating microwave oscillations, a waveguide assembly coupled to the microwave source and transmitting the microwave oscillations, and a resonant cavity coupled to the waveguide assembly for transmitting the microwave oscillations substantially in a waveguide direction.The reaction module is coupled below the inlet module and the plasma module. The reaction module includes a plasma reaction chamber, a bottom chamber located below the plasma reaction chamber, and an upper cover assembly disposed on the plasma reaction chamber with an upper opening. The plasma module extends substantially vertically through the upper cover assembly, allowing the guide pipe assembly to guide the effluent into the plasma reaction chamber. The upper cover assembly includes a top plate and a bottom plate, defining a region between the top and bottom plates. The cooling module includes a coolant source and one or more cooling pipes connected to the coolant source. The cooling pipes are connected to and supply cooling water to the region. The present invention also discloses a reactor for treating gaseous pollutants, comprising a reactor, one or more guide pipe assemblies, and one or more plasma modules. The reactor includes a reactor body, an interior region defined by the reactor body, and a partition separating the interior region from the exterior. The partition includes an outer cover and a space disposed within the reactor body and adjacent to the outer cover. The guide pipe assembly is configured to guide effluent from a semiconductor process into the interior region of the reactor. The plasma module, disposed above the reactor, includes a microwave source for generating microwave oscillations, a waveguide assembly coupled to the microwave source for transmitting the microwave oscillations, and a resonant cavity coupled to the waveguide assembly for transmitting the microwave oscillations substantially in a waveguide direction. The resonant cavity includes a first chamber proximate to the waveguide assembly and a second chamber distal to the waveguide assembly. The second chamber receives the microwave oscillations that pass through the first chamber. The microwave oscillations react with a reactant gas to form a plasma field that is provided to the interior region. The plasma field decomposes the effluent in the inner region, and a medium capable of reducing heat transfer is arranged in the space so that the temperature of the partition is much lower than the temperature of the inner region.

[0005]

Brief Description of Diagram

[0006] FIG1 is a schematic diagram of a three-dimensional assembly according to an embodiment of the present invention.

[0007] FIG2 is a schematic diagram of a three-dimensional assembly according to an embodiment of the present invention.

[0008] FIG3 is a schematic three-dimensional cross-sectional view of FIG1 along the YZ plane.

[0009] FIG4 is a partially enlarged schematic diagram of FIG3.

[0010] FIG. 5 is a partially enlarged schematic diagram of a plasma module according to an embodiment of the present invention.

[0011] 6A to 6B are cross-sectional views of FIG. 1 taken along the AA direction.

[0012] FIG7 is a schematic cross-sectional view of FIG1 along the YZ plane.

[0013] FIG8 is a partially enlarged schematic diagram of FIG7.

[0014] 9A to 9B are exploded views of an upper cover assembly according to an embodiment of the present invention.

[0015] FIG10 is a schematic three-dimensional cross-sectional view of FIG1 along the XZ plane.

[0016] [Embodiments] The following embodiments are applied to treating an effluent stream, such as waste gas, from a semiconductor manufacturing process. Although water is used in various instances in the following embodiments, this is for descriptive purposes only and is not limited to water; other alternative liquids may be used. The terminology used in describing the various embodiments herein is for the purpose of describing specific examples only and is not intended to be limiting. As used herein, the singular forms "a," "an," and "the" are intended to include the plural forms, unless the context clearly indicates otherwise or the number of elements is not intended to be limited. On the other hand, the terms "comprise" and "include" are intended to be inclusive, meaning that additional elements may be present in addition to the listed elements; when an element is described as being "connected" or "coupled" to another element, the element may be connected or coupled to the other element directly or through an intermediate element; when an element describing a layer, region or substrate is referred to as being "on" another element, it means that it may be directly on the other element or there may be an intermediate element between them. In contrast, when an element is referred to as being "directly on" another element, there is no intermediate element between them; in addition, the order of description of the various embodiments should not be interpreted as implying that operations or steps must rely on the literal order, and alternative implementations may use an order different from the order described herein to perform steps, operations, methods, etc. One aspect of the present invention discloses a plasma-type exhaust gas treatment device. In one example, the exhaust gas treatment device is a plasma and water washing exhaust gas treatment device. Referring to Figures 1J to 3, Figures 1J and 2 are three-dimensional assembly diagrams according to an embodiment of the present invention. In this embodiment, the exhaust gas treatment device includes a plasma reaction and water washing unit 10, a water tank unit 20, a secondary water washing unit 30, a filter unit, and a demisting unit. The exhaust gas treatment device is controlled by a control unit.The plasma reaction and water washing unit 10 and the secondary water washing unit 30 are respectively disposed at a top portion 24 of the water tank unit 20. The filter unit is coupled to and located above the secondary water washing unit 30, and the demisting unit is coupled to and located above the filter unit. In other words, the secondary water washing unit 30, the filter unit, and the demisting unit are sequentially located downstream of the plasma reaction and water washing unit 10. The plasma reaction and water washing unit 10 can be connected downstream of a semiconductor processing device. The plasma reaction and water washing unit 10 includes one or more air inlet modules 11, one or more plasma modules 12, a reaction module 13, a cooling module 14, and a spray module 15. In some examples, the plasma reaction and water washing unit 10 can also be connected downstream of, but not limited to, solar cell processing equipment or display panel processing equipment, and receive effluent from these devices.The air inlet module 11 includes a plurality of guide pipe assemblies 110. In this example, there are two guide pipe assemblies 110. Outflow from the semiconductor processing equipment is received through the guide pipe assemblies 110. The guide pipe assembly 110 includes a front-end guide pipe 1101, a first branch pipe 1102, and a second branch pipe 1103. The first branch pipe 1102 and the second branch pipe 1103 respectively include straight portions 1102a and 1103a and turning portions 1102b and 1103b. The front-end guide pipe 1101 extends straight along the Z axis. The first branch pipe 1102 and the second branch pipe 1103 are connected downstream of the front-end guide pipe 1101. The straight portions 1102a and 1103a also extend straight along the Z axis. The turning portions 1102b and 1103b include a first section 1104a and 1104b, respectively, and a second section 1105a and 1105b. The first sections 1104a and 1104b are curved to direct the outflow from the Z-axis to the Y-axis, while the second sections 1105a and 1105b are curved to direct the outflow from the Y-axis to the X-axis, thereby entering the plasma module 12 in a horizontal direction along the X-axis. The plasma module 12 includes a microwave source 121, a waveguide assembly 122, a resonant cavity 123, an air inlet cavity 124, a dielectric tube 125, a cooling assembly 126, and a moving member 127. In this embodiment, the microwave source 121 is a magnetron. The microwave source 121 generates a microwave oscillation. The waveguide component 122 is close to the microwave source 121 and coupled to the microwave source 121 to transmit the microwave oscillation. The resonant cavity 123 is coupled to the waveguide component 122 and allows the microwave oscillation to be transmitted substantially in a waveguide direction. The air inlet cavity 124 is coupled to the bottom of the resonant cavity 123 to communicate with the reaction module 13.4 and 5J , the resonant cavity 123 includes a first chamber 1231, a second chamber 1232, an inlet end 1233, a connecting end 1234, and a closed end 1235. The first chamber 1231 is disposed near the waveguide assembly 122, and the second chamber 1232 is disposed away from the waveguide assembly 122. The second chamber 1232 receives the microwave oscillations passing through the first chamber 1231, and the microwave oscillations react with one or more reaction gases. In one embodiment of the present invention, the first chamber 123 1 extends along a reference axis L, and the microwave oscillations are transmitted in the resonant cavity 123 substantially parallel to a waveguide direction, and the waveguide direction is close to or substantially equal to the reference axis L. The first chamber 123 1 has an inner wall, which surrounds the reference axis L and extends along the reference axis L. The inner wall includes a first region and a second region, wherein the first region is inclined toward the reference axis L, and the second region is substantially parallel to the reference axis L. The area of ​​the first region is larger than that of the second region, so that the first chamber 123 1 forms a tapered conical space from the inlet end 1233 to the connecting end 1234. As shown in FIG. 5 , the dielectric tube 125 includes a first section 1251, a second section 1252, a third section 1253, a top end 1254, and a bottom end 1255. The first section 1251 and the third section 1253 respectively protrude from the second chamber 1232, while the second section 1252 is located within the second chamber 1232. The cooling assembly 126 is mounted on one side of the top end 1254 of the dielectric tube 125 and covers the first section 1251 of the dielectric tube 125.The cooling assembly 126 includes a gas chamber 1261, a gas pipeline 1262, and a cooling pipeline 1263. The gas chamber 1261 is connected to a hollow portion H of the dielectric tube 125. The inner wall of the gas chamber 1261 has at least one air hole 1264. The reaction gas enters the gas chamber 1261 and then the hollow portion H of the dielectric tube 125 through the air hole 1264. In one embodiment, the reaction gas is a non-fuel gas, such as an inert gas such as nitrogen (N2), oxygen (Ar), or compressed dry air (CDA). The cooling pipeline 1263 is used to flow a cooling fluid to control the temperature of the gas chamber 1261 and prevent component damage. The movable member 127 is connected to a probe assembly 1271 and mounted on the cooling assembly 126. The movable member 127 controls the vertical movement of the probe assembly 1271 relative to the second chamber 1232. In this embodiment, the probe assembly 1271, the movable member 127, and the cooling assembly 126 constitute a plasma field generating source. However, this is merely an example; depending on actual applications, the plasma field generating source may also adopt other configurations. In this embodiment, the movable member 127 may be a cylinder.The microwave oscillation reaches a maximum intensity in the second chamber 1232 of the resonant cavity 123. This maximum intensity occurs in the hollow portion H within the second section 1252 of the dielectric tube 125. When the reaction gas fills the hollow portion H of the dielectric tube 125, the movable member 127 controls the probe assembly 1271 to move downward into the hollow portion H within the second section 1252. When the maximum intensity of the microwave oscillation reaches a minimum threshold, a plasma field is formed downward in the hollow portion H, releasing a large number of positive ions, negative ions, or both. The plasma field is formed in a first direction (e.g., the Z-axis direction), and the outflow is flowed in a second direction (e.g., the X-axis direction). The first and second directions intersect at an angle, such as 90°. Referring to FIG. 6A and FIG. 6B , FIG. 1 is a diagram illustrating a direction along A-axis. Cross-sectional view in direction A (with the XY plane as the cross-sectional view in the viewing direction of AA). In this example, the inlet chamber 124 extends along a vertical direction (Z-axis direction), while the first branch tube 1102 and the second branch tube 1103 extend along a horizontal direction (X-axis direction) and enter the inlet chamber 124 from opposite sides of the inlet chamber 124. The second sections 1105a and 1105b of the first branch tube 1102 and the second branch tube 1103 are respectively offset relative to an axial center of the inlet chamber 124. The second sections 1105a and 1105b are parallel to each other in the XY plane but are also offset (i.e., not aligned) with each other. As a result, after the outflow enters the inlet chamber 124 through the second sections 1105a and 1105b, a cyclone is generated, which increases collisions between gases and between gases and plasma, thereby helping to improve decomposition efficiency.On the other hand, the air inlet cavity 124 further includes a deflector 1241. The deflector 1241 is adjacent to the side openings 1242 and 1243 of the air inlet cavity 124 that communicate with the second sections 1105a and 1105b. The deflector 1241 is conical and includes an inclined conical surface 1241a. The height of the conical surface 1241a is lower than the side openings 1242 and 1243. In this way, the outflow is guided upward by the deflector 1241 when entering the air inlet cavity 124, which helps to enhance the formation of the cyclone. In one example, the dielectric tube 125 extends along the first direction to the air inlet cavity 124, and the guide pipe assembly 110 includes a first air inlet 110a and a second air inlet 110b. The first air inlet 110a and the second air inlet 110b extend along the second direction to the air inlet cavity 124, wherein the first air inlet 110a is connected to the side opening 1242, and the second air inlet 110b is connected to the side opening 1243. The first air inlet 110a and the second air inlet 110b are arranged oppositely and staggered on an annular wall 124a of the air inlet cavity 124, and the deflector 1241 partially blocks the first air inlet 110a and the second air inlet 110b to affect the flow of the outflow into the air inlet cavity 124. 7 and 8 , the reaction module 13 is a plasma reactor and is coupled below the gas inlet module 11 and the plasma module 12. The reaction module 13 includes a reactor body 131 and a top cover assembly 132. The reactor body 131 is cylindrical or conical in shape and defines a plasma reaction chamber 131a, an upper opening 131b located above the plasma reaction chamber 131a, and a bottom chamber 131c located below the plasma reaction chamber 131a.The upper cover assembly 132 is disposed within the upper opening 131b. Referring to Figures 9AJ to 9BJ, the upper cover assembly 132 includes a top plate 1321 and a bottom plate 1322. The top plate 1321 and the bottom plate 1322 are stacked one on top of the other. In this example, a bottom surface 1321b of the top plate 1321 is flat, while the bottom plate 1322 has a recessed structure 1322b. This creates an area 132a between the top plate 1321 and the bottom plate 1322. The area 132a is a space extending along the XY plane and is used to accommodate a cooling fluid. An annular wall 1323 is disposed between the top plate 1321 and the bottom plate 1322. The top plate 1321, the bottom plate 1322, and the annular wall 1323 define the area 132a. The top plate 1321 has one or more openings 1321a, and the bottom plate 1322 has one or more openings 1322a. The openings 1321a and 1322a correspond to each other in the vertical direction and connect to the plasma reaction chamber 131a. In this embodiment, there are two openings 1321a and 1322a, respectively. The gas inlet cavity 124 of the plasma module 12 connects to the openings 1321a, positioning the plasma module 12 above the openings 1321a. The guide pipe assembly 110 is inserted into the gas inlet cavity 124, exposing the gas outlet to the plasma reaction chamber 131a through the openings 1321a and 1322a. In this example, when viewed from above, there are two plasma modules 12, and each plasma module 12 is disposed at both ends of the upper cover assembly 132 and at the opening 1321a. The resonant cavity 123 and the air inlet cavity 124 of the plasma module 12 are both disposed toward the reaction module 13, and the guide pipe assembly 110 of the air inlet module 11 is laterally connected to the air inlet cavity 124. The effluent enters the air inlet cavity 124 from the guide pipe assembly 110 and flows into the plasma reaction chamber 131a. In this way, the microwave oscillation provided by the plasma module 12 reacts with a reaction gas to form a plasma field, so that the plasma reaction chamber 131a can serve as a plasma reaction region, and the effluent is decomposed by plasma.The upper cover assembly 132 is substantially located above the plasma reaction area. The cooling module 14 (shown in FIG. 10J ) includes a coolant source and one or more cooling pipes 141 connected to the coolant source. The cooling pipes 141 are transversely inserted into the annular wall 1323 between the bottom plate 1322 and the top plate 1321 and supply a cooling fluid (such as cooling water) to the area 132a. This cooling water can be circulated through a circulation pipe. The cooling design of the upper cover assembly 132 keeps the temperature near the top plate 1321 lower than that of the plasma reaction chamber 131a, where the plasma is generated, reducing operator safety risks. The cooling water flows through the area 132a near the exterior, effectively removing heat. In one embodiment, when cooling water with a temperature between 16°C and 20°C (e.g., 18°C) is used, even when the temperature of the plasma reaction chamber 131a is higher than 500°C or even higher than 900°C, the temperature near the top plate 1321 can be lower than 200°C, significantly improving the safety of operators and the operating environment. In contrast, in a plasma exhaust treatment apparatus without the cooling module 14 and the upper cover assembly 132, when the plasma reaction chamber 131a is in operation, the external temperature is higher than 200°C, exposing operators to a dangerous environment. In one example, the reactor body 131 defines an interior region (i.e., the plasma reaction chamber 131a) within the reaction module 13. The upper cover assembly 132 serves as a partition separating the interior region from the exterior. The upper cover assembly 132 (i.e., the partition) includes an outer cover plate and a space (e.g., the region 132a) disposed within the reactor body 131 and adjacent to the outer cover plate. The microwave oscillations react with a reaction gas to generate plasma within the plasma reaction chamber 131a, causing the effluent to decompose within the interior region. A medium (e.g., the cooling fluid) capable of reducing heat transfer is disposed within the space, thereby maintaining the temperature of the partition significantly lower than that of the interior region.A lateral annular gap 1312 is defined between the upper opening 131b of the reactor body 131 and the upper cover assembly 132. A water reservoir 134 is mounted on a housing of the reactor body 131. The water reservoir 134 is connected to an annular flange having a plurality of pipes connected to a water source through a plurality of pipelines, thereby supplying water to the water reservoir 134. Water in the water reservoir 134 flows from the annular gap 1312 into the plasma reaction chamber 131a and flows downward along an inner wall 1311a of the plasma reaction chamber 131a, forming a water curtain to flush the exhaust gas entering the plasma reaction chamber 131a and clean dust, particles, or dirt adhering to the inner wall 1311a. The reaction module 13 is also equipped with an air inlet unit 135, which is located above the plasma reaction chamber 131a and the water reservoir 134 and provides compressed dry gas. The spray module 15 includes a plurality of spray nozzles 151. From a side view, the spray nozzles 151 are positioned obliquely and downwardly within the bottom chamber 131c. From a top view, the spray nozzles 151 are non-centrifugally offset in the same direction, thereby providing a better spraying effect. The spray nozzles 151 dispense an effluent treating agent, which can be water or water mixed with a corrosive, acidic, ionic or non-ionic surfactant or coagulant. The spray nozzles 151 can configure the effluent treating agent to be a liquid spray or a mist, which can capture harmful gases or particles in the effluent.Referring to FIG. 10 , the reactor body 131 communicates with the water tank unit 20 via the bottom chamber 131 c. The water tank unit 20 includes a water collection space 21, a barrier 22, a first upper opening 23 a, and a second upper opening 23 b. The barrier 22 is disposed within the water collection space 21 and separates the water collection space 21 into a first region 21 a and a second region 21 b. The first region 21 a and the second region 21 b are interconnected. Circulating water is stored within the water collection space 21. The water level is lower than the top 24 of the water tank unit 20 and higher than the barrier 22. This leaves channels in the first region 21 a and the second region 21 b for lateral movement of the exhaust gas. The first upper opening 23a and the second upper opening 23b are connected to the first region 21a. The first upper opening 23a is connected to the plasma reaction and water washing unit 10, while the second upper opening 23b is connected to the secondary water washing unit 30. Furthermore, the water tank unit 20 includes an extraction port 26 and a water inlet 27 (shown in FIG. 2 ). The extraction port 26 is coupled to a pump pipe, and the water inlet 27 is used to supply water, which may be fresh make-up water or recirculating water. The secondary water washing unit 30 may be a packed bed scrubber. The secondary water washing unit 30 includes a lower opening 31, one or more compartments 32, one or more nozzles 33, and an upper opening 34. The lower opening 31 is connected to the second upper opening 23b, and the upper opening 34 is connected to the filtration unit. The compartment 32 is configured to store a packing material. The packing material may have a high surface to volume ratio. For example, the packing material may be made of polyvinyl chloride (PVC), but is not limited to the above materials.The spray head 33 sprays an effluent treatment agent onto the packing material, increasing the contact area between the gas or particles in the gas and the effluent treatment agent on the packing material, and wetting and rinsing the packing material to capture particles. The filtration unit is connected to the upper opening 34 of the secondary water washing unit 30. The filtration unit includes one or more filters and one or more spray heads. The filter can capture and remove particulate matter or fine dust, such as PM2.5, from the effluent. The spray head can spray an effluent treatment agent to increase capture efficiency and rinse the filter. The demisting unit is connected above the filtration unit. In one example, the demisting unit includes one or more condensing plates. After the previous water washing process, the exhaust gas contains a certain proportion of water vapor. To ensure that the exhaust gas meets emission standards, the exhaust gas entering the demisting unit flows through channels separated by the condensing plates, extending the time the exhaust gas stays in the demisting unit. During the flow path, the exhaust gas contacts the condensing plates, causing the water vapor to be separated on the condensing plates. Accordingly, the water vapor in the exhaust gas passing through the demisting unit can be effectively separated to meet the emission standards.

[0017]

Explanation of symbols

[0018] 10: Plasma reaction and water washing unit 11: Air intake module

[0019] 110: Guide tube assembly

[0020] 110a: First air inlet

[0021] 110b: Second air inlet

[0022] 1101: Front guide line

[0023] 1102: First branch line

[0024] 1102a: Straight section

[0025] 1102b: Steering section

[0026] 1104a: First paragraph

[0027] 1105a: Second section

[0028] 1103: Second branch line

[0029] 1103a: Straight section

[0030] 1103b: Steering section

[0031] 1104b: First paragraph

[0032] 1105b: Second section

[0033] 12: Plasma module

[0034] 121: Microwave Source

[0035] 122: Waveguide components

[0036] 123: Resonant Cavity

[0037] 1231: First Chamber

[0038] 1232: Second chamber

[0039] 1233: Entry port

[0040] 1234: Connectivity

[0041] 1235: Closed end

[0042] 124: air inlet cavity 124a: annular wall

[0043] 1241 : Deflector

[0044] 1242, 1243: Side opening

[0045] 125: Dielectric tube

[0046] 1251: First section

[0047] 1252: Second section

[0048] 1253: The third section

[0049] 1254: Top

[0050] 1255: bottom

[0051] 126: Cooling assembly

[0052] 1261 : Gas Chamber

[0053] 1262: Gas pipeline

[0054] 1263: Cooling pipe

[0055] 1264: Stoma

[0056] 127: Moving parts

[0057] 1271: Probe Assembly

[0058] 13: Reaction Module

[0059] 131: Reactor body

[0060] 131a: Plasma reaction chamber

[0061] 1311a: Inner wall

[0062] 131b: Upper opening

[0063] 131c: Bottom chamber

[0064] 1312: Annular gap

[0065] 132: Upper cover assembly

[0066] 132a: Area 1321: Top Plate

[0067] 1321a: Opening

[0068] 1321b: bottom

[0069] 1322: Baseboard

[0070] 1322a: Opening

[0071] 1322b: Depressed structure

[0072] 1323: Ring Wall

[0073] 134: Reservoir

[0074] 135: Air intake unit

[0075] 14: Cooling module

[0076] 141: Cooling pipe

[0077] 15: Spraying module

[0078] 151: Spray nozzle 0: Water tank unit 1: Water collection space 1a: First area 1b: Second area 2: Blocking member 3a: First upper opening 3b: Second upper opening 4: Top 6: Extraction port 7: Water inlet

[0079] 30: Secondary washing unit

[0080] 31: Lower opening 32: Compartment

[0081] 33: Nozzle

[0082] 34: Opening on top

[0083] H: Hollow

[0084] L: Datum axis

Claims

Date of receipt of amended claims by the International Bureau: 03 June 2024 (03.06.2024) [Scope of patent application] 1 . A head assembly, characterized in that: The head assembly is configured to be installed in a plasma reactor for treating gaseous pollutants. The head assembly includes: an upper cover assembly, which is arranged on a plasma reaction area. The upper cover assembly includes a top plate and a bottom plate. An area for accommodating a cooling fluid is defined between the top plate and the bottom plate. The bottom plate includes one or more openings; one or more plasma modules are connected to the plasma reaction area through the openings. The plasma modules respectively include a microwave source for generating a microwave oscillation, a waveguide assembly coupled to the microwave source and transmitting the microwave oscillation, and a resonant cavity coupled to the waveguide assembly and for transmitting the microwave oscillation substantially in a waveguide direction. The resonant cavity includes a first chamber close to the waveguide assembly and a second chamber far from the waveguide assembly. The second chamber receives the microwave oscillation passing through the first chamber. The microwave oscillation reacts with a reaction gas to form a plasma field provided to the plasma reaction area. A formation direction of the plasma field is located in a first orientation. The plasma field is generated in a dielectric tube. The dielectric tube extends along the first orientation to an air inlet cavity; and one or more guide pipe components are configured to guide an effluent from a semiconductor process to the plasma reaction region, a flow direction of the effluent is located in a second orientation, the first orientation and the second orientation intersect each other at an angle, and the one or more guide pipe components are configured to generate a cyclone in the plasma field, the guide pipe component includes a first air inlet and a second air inlet, the first air inlet and the second air inlet extend along the second orientation to the air inlet cavity, and the first air inlet and the second air inlet are arranged on an annular wall of the air inlet cavity. Amendment page (Article 19 of the Treaty) 2. The head assembly according to claim 1, characterized in that: The first air inlet and the second air inlet are disposed on the annular wall of the air inlet cavity in a manner opposite to and offset from each other.

3. The head assembly according to claim 1, characterized in that: The air inlet cavity includes a deflector that partially blocks the first air inlet and the second air inlet to affect the flow of the outflow into the air inlet cavity.

4. The head assembly according to claim 3, characterized in that: The deflector includes an inclined tapered surface.

5. A reactor for treating gaseous pollutants, comprising: One or more air inlet modules, each including one or more guide pipeline components, configured to guide an outflow from a semiconductor process; one or more plasma modules, connected to the air inlet module, each including a microwave source for generating a microwave oscillation, a waveguide component coupled to the microwave source and transmitting the microwave oscillation, and a resonant cavity coupled to the waveguide component and for transmitting the microwave oscillation substantially in a waveguide direction, the microwave oscillation reacts with a reaction gas to form a plasma field; a reaction module, coupled to the air inlet module and below the plasma module, the reaction module including a plasma reaction chamber, a bottom chamber located below the plasma reaction chamber, and an upper cover component with an upper opening disposed on the plasma reaction chamber, the plasma module substantially vertically passes through the upper cover component, The guide pipe assembly guides the effluent into the plasma reaction chamber, the upper cover assembly includes a top plate and a bottom plate, and an area is defined between the top plate and the bottom plate; and Amendment Page (Article 19 of the Treaty) A cooling module comprises a cooling liquid source and one or more cooling pipes connected to the cooling liquid source, the cooling pipes are connected to and supply cooling water to the area; wherein a formation direction of the plasma field is located in a first orientation, a flow direction of the outflow is located in a second orientation, the first orientation and the second orientation intersect each other at an angle, and the one or more guide pipe assemblies are configured to generate a cyclone in the plasma field; and wherein the plasma field is generated in a dielectric tube, the dielectric tube extends along the first orientation to an air inlet cavity. The guide pipe assembly comprises a first air inlet and a second air inlet, the first air inlet and the second air inlet extend along the second orientation to the air inlet cavity, wherein the first air inlet and the second air inlet are arranged on an annular wall of the air inlet cavity.

6. The reactor according to claim 5, characterized in that The plasma reaction chamber includes an annular gap and a water reservoir communicating with the annular gap. The water reservoir provides a water curtain flowing downward along an inner wall of the plasma reaction chamber through the annular gap.

7. The reactor according to claim 5, characterized in that the first air inlet and the second air inlet are arranged on the annular wall of the air inlet cavity in a relative and staggered manner.

8. The reactor according to claim 5, characterized in that The air inlet cavity includes a deflector that partially blocks the first air inlet and the second air inlet to affect the flow of the outflow into the air inlet cavity.

9. The reactor according to claim 8, characterized in that The deflector includes an inclined conical surface.

10. A reactor for treating gaseous pollutants, characterized in that: The invention comprises: a reactor, comprising a reactor body, an inner region defined by the reactor body, and a partition separating the inner region from the outside, the partition comprising an outer cover plate, a space disposed in the reactor body and adjacent to the outer cover plate; one or more guide pipe assemblies, configured to guide an effluent from a semiconductor process to the inner region of the reactor; and one or more plasma modules, disposed on the reactor, the plasma modules respectively comprising a microwave source for generating a microwave oscillation, a waveguide assembly coupled to the microwave source and transmitting the microwave oscillation, and a resonant cavity coupled to the waveguide assembly and for transmitting the microwave oscillation substantially in a waveguide direction, the resonant cavity comprising a first chamber close to the waveguide assembly and a second chamber far from the waveguide assembly, the second chamber receiving the microwave oscillation passing through the first chamber, the microwave oscillation reacting with a reaction gas to form a plasma field provided to the inner region; The plasma field causes the outflow to be decomposed in the inner region, and a medium capable of reducing heat transfer is arranged in the space so that the temperature of the partition is much lower than the temperature of the inner region; wherein a formation direction of the plasma field is located in a first orientation, a flow direction of the outflow is located in a second orientation, the first orientation and the second orientation intersect each other at an angle, and the one or more guide pipe components are configured to generate a cyclone in the plasma field; and wherein the plasma field is generated in a dielectric tube, the dielectric tube extends along the first orientation to an inlet cavity, the guide pipe component includes a first inlet The first air inlet and the second air inlet extend along the second direction to the air inlet cavity, wherein the first air inlet and the second air inlet are disposed on a ring wall of the air inlet cavity. 1 1. The reactor according to claim 10, characterized in that the first air inlet and the second air inlet are arranged on the annular wall of the air inlet cavity in a relative and staggered manner.

12. The reactor according to claim 10, characterized in that The air inlet cavity includes a deflector that partially blocks the first air inlet and the second air inlet to affect the flow of the outflow into the air inlet cavity.

13. The reactor according to claim 12, characterized in that The deflector includes an inclined conical surface.

Images