Phase-shift mask substrate alloy target and manufacturing method therefor

Abstract

The present invention provides a phase-shift mask substrate alloy target and a manufacturing method therefor. The manufacturing method for a phase-shift mask substrate alloy target comprises the following steps: uniformly mixing high-purity Mo powder and Si powder to obtain Mo-Si mixed powder; adding a carbon-containing material to the Mo-Si mixed powder and uniformly mixing to obtain carbon-containing Mo-Si mixed powder; using an isostatic pressing process to prepare the carbon-containing Mo-Si mixed powder into a preformed body; using a high-temperature sintering process to prepare the preformed body into a phase-shift mask substrate alloy target blank; and welding the phase-shift mask substrate alloy target blank to a backing plate to prepare a phase-shift mask substrate alloy target. The manufacturing method for a phase-shift mask substrate alloy target can improve product stability of the phase-shift mask substrate alloy target, and can effectively solve the technical problems in the prior art of poor film formation quality, high production costs and potential safety hazards in a method for introducing a carbon source into a phase-shift film.

Description

Phase shift mask base alloy target and manufacturing method thereof TECHNICAL FIELD

[0001] The present application relates to the field of integrated circuit manufacturing technology, in particular to a phase shift mask base alloy target and a manufacturing method thereof. BACKGROUND

[0002] Semiconductor elements are made through a series of processes including wafer, oxidation, exposure to packaging, etc. The most important process among the eight processes is the exposure process. The exposure process uses a photomask as the original version and uses an exposure device to project the circuit line width on the wafer to form the process.

[0003] A photomask is a product that uses electron beam exposure technology to etch fine line patterns on a mask base. The mask base is manufactured by forming multiple layers of chromium film on a quartz substrate and then coating the multiple layers of chromium film with photoresist to form the mask base. With the high integration of semiconductor integrated circuits, the photomask line pattern tends to be more precise and fine. In order to form finer patterns in semiconductor integrated circuits, high pattern resolution is required. Phase shift masks use both the intensity and phase of light to form images, providing higher resolution and being widely used in more demanding semiconductor lithography processes.

[0004] A phase shift mask is a metal thin film containing MoxSiy compound deposited on the surface of a glass substrate, which causes a 180-degree phase difference when light passes through the thin film area, thereby enhancing the contrast of the image and improving the resolution. To further optimize the performance of the phase shift film, carbon elements can be introduced into the phase shift film (MoSi metal film). After adding carbon elements, the corrosion resistance, mechanical strength and stability of the phase shift film can be enhanced, and the light transmission and electrical conductivity of the phase shift film can also be improved. The existing technology commonly uses CH4, CO and CO2 gas as carbon source in the vacuum sputtering process. By introducing carbon-containing gas, MoSiONC, MoSiC or MoSiOC multi-element metal film or dielectric film is formed. However, the existing method of introducing carbon source into the phase shift film uses gas as the carbon source, which increases the partial pressure of negative ions in the sputtering chamber, resulting in a decrease in film formation rate and film formation flatness, affecting the quality of phase shift film formation. Moreover, the use of high-pressure gas increases the production cost, and the carbon source gas includes flammable or toxic gas, which poses a safety hazard in production. Therefore, the existing method of introducing carbon source into the phase shift film has the technical problems of poor film quality, high production cost and safety hazards. SUMMARY

[0005] The present application aims to provide a phase shift mask base alloy target and a manufacturing method thereof to solve the technical problems of poor film forming quality, high production cost and safety hazards existing in the current method of introducing carbon source into the phase shift film.

[0006] To achieve the above-mentioned purpose, in one aspect, the present application provides a phase shift mask base alloy target, comprising a phase shift mask base alloy target blank and a back plate, the phase shift mask base alloy target blank and the back plate are welded and connected, the phase shift mask base alloy target blank comprises molybdenum element, silicon element and carbon element, the mass ratio of the carbon element is 0.1%~1%, and the mass ratio of the molybdenum element and the silicon element is 1:4~1:9.

[0007] The phase shift mask base alloy target described above provides a molybdenum-silicon alloy target containing carbon element, realizes the introduction of carbon source into the molybdenum-silicon alloy target, and directly forms a MoSi metal film containing carbon element by using the phase shift mask base alloy target for sputtering, so that the introduction of carbon source into the phase shift film can be realized without introducing CH4, CO and CO2 and other carbon-containing gases in the process of sputtering deposition to form the phase shift film, thereby avoiding the increase of the gas partial pressure of negative ion gas in the sputtering chamber, effectively improving the film forming rate and film forming flatness, and greatly improving the film forming quality of the carbon-containing phase shift film. Moreover, the mass ratio of the molybdenum element and the silicon element is 1:4~1:9, which can reduce the difference in sputtering yield of molybdenum and silicon in the process of magnetron sputtering, and simultaneously adding 0.1%~1% of carbon can ensure that the Mo / Si ratio is 1:4~1:9 to improve the solid solubility of molybdenum in silicon to refine the grain size, so that the sputtering film forming uniformity can be improved, the carbon-containing phase shift film with uniform film thickness is formed, which is beneficial to further improve the film forming flatness and further improve the film forming quality. At the same time, the improvement of the solid solubility of molybdenum in silicon can eliminate the non-uniformity and non-solute phenomenon in the micro area, form a more stable compound, and effectively improve the product stability.

[0008] In addition, the phase shift mask base alloy target described above does not need to introduce CH4, CO and CO2 and other high-pressure gases in the sputtering process, which is beneficial to save the production cost of sputtering process, and the introduction of flammable or toxic gas in the sputtering process is avoided, which is beneficial to improve the production safety.

[0009] Therefore, the phase shift mask base alloy target described above has the beneficial effects of high product stability, good film forming quality, saving the production cost of carbon-containing phase shift film, and improving the production safety of carbon-containing phase shift film.

[0010] In one embodiment, the average grain size of the phase shift mask base alloy target blank is 30μ~50μm.

[0011] On the other hand, the present application also provides a manufacturing method of the phase shift mask base alloy target described above, comprising the following steps:

[0012] Mixing high-purity Mo powder and Si powder uniformly to obtain Mo and Si mixed powder;

[0013] Adding carbon-containing substance to the Mo and Si mixed powder and mixing uniformly to obtain Mo and Si mixed powder containing carbon;

[0014] Using isostatic pressing process to prepare the Mo and Si mixed powder containing carbon into a preform;

[0015] Using high-temperature sintering process to prepare the preform into a phase shift mask base alloy target blank;

[0016] Welding the phase shift mask base alloy target blank with a back plate to prepare a phase shift mask base alloy target material.

[0017] The manufacturing method of the phase shift mask base alloy target material is used to manufacture the above-mentioned phase shift mask base alloy target material. The method introduces a carbon source during the manufacturing process of the phase shift mask base alloy target material to prepare a preform containing Mo, Si and carbon, and then uses high-temperature sintering process to prepare the preform into a phase shift mask base alloy target blank. The addition of carbon can form SiC and MoSi2 during the process of high-temperature sintering of the preform into the phase shift mask base alloy target blank. SiC and MoSi2 have good interfacial compatibility and thermodynamic stability, which can improve the grain boundary structure and increase the solid solubility of molybdenum in silicon to refine the grain size. Experiments have proved that by introducing carbon elements into the molybdenum-silicon target material through the above-mentioned manufacturing method of the phase shift mask base alloy target material, the average grain size can be reduced from 150μ~300μm to 30μ~50μm, the grain size is more uniform, the sputtering film uniformity can be improved, the carbon-containing phase shift film with uniform film thickness can be formed, which is beneficial to further improve the film flatness and improve the sputtering film quality. Moreover, the increase of the solid solubility of molybdenum in silicon can eliminate the inhomogeneity and non-solubility phenomenon in the micro region, form a more stable compound, and effectively improve the product stability of the prepared phase shift mask base alloy target material.

[0018] In addition, the manufacturing method of the phase shift mask base alloy target material introduces a carbon source during the manufacturing process of the phase shift mask base alloy target material to prepare a molybdenum-silicon alloy target material containing carbon elements, which realizes the introduction of carbon source in the molybdenum-silicon alloy target material, so that the carbon source can be introduced into the phase shift film during the sputtering deposition process without introducing carbon-containing gas, which can effectively solve the technical problems of poor film quality, high production cost and safety hazards existing in the method of introducing carbon source into the phase shift film in the prior art.

[0019] In summary, the manufacturing method of the phase shift mask base alloy target material can improve the product stability of the phase shift mask base alloy target material, and effectively solve the technical problems of poor film quality, high production cost and safety hazards existing in the method of introducing carbon source into the phase shift film in the prior art.

[0020] In one of the embodiments, the step of mixing the high-purity Mo powder and the Si powder uniformly includes: using a high-speed powder ball milling device to ball mill the Mo powder and the Si powder at a ball milling speed of 2000 r / min to 5000 r / min for 2 to 3 hours.

[0021] In one of the embodiments, the step of adding the carbon-containing substance to the Mo-Si mixed powder and mixing uniformly includes:

[0022] adding the carbon-containing substance to the Mo-Si mixed powder;

[0023] using a high-speed powder ball milling device to ball mill the Mo-Si mixed powder and the carbon-containing substance at a ball milling speed of not less than 3000 r / min for 1 to 2 hours.

[0024] In one of the embodiments, the carbon-containing substance is carbon powder, diamond powder, or any form of pure carbon powder.

[0025] In one of the embodiments, the isostatic pressing pressure of the isostatic pressing process is 20 MPa to 30 MPa, and / or the isostatic pressing time is not less than 10 minutes.

[0026] In one of the embodiments, the sintering temperature of the high-temperature sintering process is 1600℃±30℃.

[0027] In one of the embodiments, the high-temperature sintering process is performed under the protection of inert gas or nitrogen.

[0028] In one of the embodiments, the gas flow rate of the inert gas or nitrogen is 20 sccm to 40 sccm. BRIEF DESCRIPTION OF DRAWINGS

[0029] FIG. 1 is a structural schematic diagram of a phase shift mask base alloy target according to one of the embodiments;

[0030] FIG. 2 is a flow principle diagram of a manufacturing method of a phase shift mask base alloy target according to one of the embodiments.

[0031] Explanation of reference signs:

[0032] 10 - phase shift mask base alloy target blank, 20 - back plate. DETAILED DESCRIPTION

[0033] In the following description, numerous specific details are given to provide a thorough understanding of the application. However, it will be apparent that the application can be practiced without one or more of the specific details presented. In other instances, well-known structures are not described in order to avoid obscuring the present application. It should be understood that the application can be practiced with different arrangements of components and elements than those shown or described here. On the other hand, the application is to be considered as not limited to the embodiments presented here. Rather, the application is to cover all modifications, equivalents, and alternatives falling within the scope of the application. Throughout this specification, like reference numbers can refer to like components throughout the several figures and embodiments. When a layer is referred to as being formed on another layer, it can be directly formed on the other layer or intervening films can be present therebetween. Where the terms "on", "under", "upper", "lower", "top", "bottom", etc. are used, it is understood that these terms are intended to encompass different orientations of the device or element in addition to the orientation depicted in the figures. For example, when a device or element is referred to as being "on" another device or element, it can be "on" the other device or element, or intervening films can be present therebetween. Where the terms "front", "back", "side", etc. are used, it is understood that these terms are intended to encompass different orientations of the device or element in addition to the orientation depicted in the figures. For example, when a device or element is referred to as being "front", "back", "side", etc., it can be "front", "back", "side", etc., or it can be "back", "front", "side", etc., depending on the orientation of the device or element. Like numbers refer to like elements throughout. The terms "first", "second", etc. do not necessarily indicate an order or sequence unless specifically stated. The terms "comprises", "comprising", "includes", "including", "has", "having", "contains", "containing", or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises, has, contains, or contains elements or steps not listed is still within the scope of such terms. The terms "an" and "one" are defined as including one or more of the referenced item unless specifically stated otherwise. The terms "another" and "a further" are defined as including at least a second or more unless specifically stated otherwise. The terms "comprising", "including", containing", and "carrying" are not used in their exclusive sense. The terms "and / or" and "and / or" include any and all combinations of one or more of the associated listed items. The terms "same", "equal" and "identical" include the meaning of exactly the same and exactly identical, and also include the meaning of approximately the same or approximately identical within a permissible process error. The terms "first", "second", etc. are used to distinguish between similar elements, and are not necessarily used to describe a particular order or time sequence. It is to be understood that these terms can be interchanged, for example, the embodiments of the application described herein can operate in different sequences than those described or shown, and some of the steps described herein can be omitted and / or other steps not described herein can be added to the method. If a component in one figure is the same as a component in another figure, although the components can be easily recognized in all the figures, the present specification will not label all the same components with the same reference numerals in every figure for the sake of clarity of the figure description.

[0034] The present application will be more fully understood from the following detailed description taken in connection with the accompanying drawings, in which:

[0034] The present application will be more fully understood from the following detailed description taken in connection with the accompanying drawings, in which:

[0035] Referring to FIG. 1, a phase shift mask base alloy target of an embodiment includes a phase shift mask base alloy target blank 10 and a back plate 20, the phase shift mask base alloy target blank 10 and the back plate 20 are welded, the phase shift mask base alloy target blank 10 includes molybdenum elements, silicon elements and carbon elements, wherein the mass ratio of the carbon elements is 0.1%~1%, the mass ratio of the molybdenum elements and the silicon elements is 1:4~1:9. Further, in an embodiment, the average grain size of the phase shift mask base alloy target blank is 30μ~50μm.

[0036] The phase shift mask base alloy target described above provides a molybdenum-silicon alloy target containing carbon elements, introduces carbon source in the molybdenum-silicon alloy target, and directly forms a MoSi metal film containing carbon elements by sputtering using the phase shift mask base alloy target, so that carbon source can be introduced into the phase shift film without introducing CH4, CO and CO2 and other carbon-containing gases in the process of sputtering and depositing to form a phase shift film, thereby avoiding increasing the gas partial pressure of negative ion gas in the sputtering chamber, effectively improving the film formation rate and film formation flatness, and greatly improving the film formation quality of the carbon-containing phase shift film. Moreover, the mass ratio of molybdenum elements and silicon elements is 1:4~1:9, which can reduce the difference in sputtering yield of molybdenum and silicon in the process of magnetron sputtering, and the addition of 0.1%~1% carbon can ensure that the Mo / Si ratio is 1:4~1:9 to improve the solid solubility of molybdenum in silicon to refine the grain size, the average grain size of the phase shift mask base alloy target blank can be reduced to 30μ~50μm, the grain size is more uniform, the sputtering film uniformity can be improved, the carbon-containing phase shift film with uniform film thickness is formed, which is beneficial to further improve the film formation flatness and further improve the film formation quality. At the same time, the improvement of the solid solubility of molybdenum in silicon can eliminate the inhomogeneity and non-solid solution phenomenon in the micro area, form a more stable compound, and effectively improve the product stability.

[0037] In addition, the phase shift mask base alloy target described above does not need to introduce CH4, CO and CO2 and other high-pressure gases in the sputtering process, which is beneficial to save the production cost of the sputtering process, and the introduction of flammable or toxic gas in the sputtering process is avoided, which is beneficial to improve the production safety.

[0038] The phase shift mask base alloy target described above has the beneficial effects of high product stability, good film formation quality, saving the production cost of the carbon-containing phase shift film, and improving the production safety of the carbon-containing phase shift film.

[0039] Referring to FIG. 2, the present application also provides a manufacturing method of the phase shift mask base alloy target described above, including the following steps:

[0040] Step S11: uniformly mix high-purity Mo powder and Si powder to obtain Mo and Si mixed powder.

[0041] Specifically, in order to reduce the difference between the sputtering yields of molybdenum and silicon in the magnetron sputtering process, the Mo powder and the Si powder are mixed according to a mass ratio of 1:4 to 1:9, and the purity of the high-purity Mo powder and the Si powder is not less than 99.9%, so as to ensure the purity of the phase shift mask base alloy target. Further, in order to ensure that the Mo powder and the Si powder are fully mixed and uniform, a high-speed powder ball milling device is used for uniform mixing, and silicon balls are preferably used as the ball milling medium to avoid the introduction of impurities in the mixing process. In an embodiment, in order to ensure that the Mo powder and the Si powder are uniformly mixed, the high-speed powder ball milling device is used to ball mill the Mo powder and the Si powder at a ball milling speed of 2000 r / min to 5000 r / min for 2 to 3 hours.

[0042] Step S12: adding a carbon-containing substance to the Mo and Si mixed powder and mixing uniformly to obtain a carbon-containing Mo and Si mixed powder.

[0043] Specifically, the carbon-containing substance is carbon powder, diamond powder or any form of pure carbon powder, and the purity of the pure carbon powder is not less than 99.9%. Further, in order to ensure the film forming quality of the phase shift mask base alloy target, the pure carbon powder is added to the Mo and Si mixed powder according to a mass ratio of 0.1% to 1% for mixing, and similarly, after the pure carbon powder is added, a high-speed ball milling device is also used for uniform mixing.

[0044] In an embodiment, step S12 specifically includes the following steps: first, a carbon-containing substance is added to the Mo and Si mixed powder, specifically, after the Mo powder and the Si powder are mixed uniformly to obtain the Mo and Si mixed powder, a proper amount of pure carbon powder is put into the high-speed ball milling device according to a predetermined mass ratio. Then, the high-speed powder ball milling device is used to ball mill the Mo and Si mixed powder and the carbon-containing substance at a ball milling speed of not less than 3000 r / min for 1 to 2 hours, so that the pure carbon powder is fully mixed and uniform with the Mo powder and the Si powder, and a carbon-containing Mo and Si mixed powder is obtained.

[0045] In this embodiment, the ball milling speed in step S12 is preferably higher than that in step S11, that is, the Mo powder and the Si powder are first mixed uniformly by using a lower ball milling speed in step S11, and then step S12 is performed, the pure carbon powder is added and the ball milling speed is increased for ball milling and mixing, which can further reduce the particle size on the basis of mixing the pure carbon powder and the Mo and Si mixed powder to obtain the carbon-containing Mo and Si mixed powder, and is beneficial to reducing the grain size of the prepared phase shift mask base alloy target blank.

[0046] Step S13: using an isostatic pressing process to prepare a preform blank from the carbon-containing Mo and Si mixed powder.

[0047] Specifically, the carbon-containing Mo and Si mixed powder is first made into a target blank shape through a mold, and then is pressed by an isostatic pressing device to form a preform body with a preset shape and size. As shown in FIG. 1, in the present embodiment, the phase shift mask base alloy target blank 10 is a circular target blank, so a circular mold is used to make a circular preform body. In other embodiments, the phase shift mask base alloy target blank 10 can also be square or of an irregular shape. During the preform body manufacturing process, a corresponding mold is selected according to the shape and size of the phase shift mask base alloy target blank 10 to make the target blank shape. The present embodiment is not specifically limited.

[0048] In one embodiment, to ensure that the powder inside the preform body is fully bonded, the isostatic pressing pressure of the isostatic pressing process is 20 MPa to 30 MPa. Further, the isostatic pressing time is not less than 10 min, and preferably the isostatic pressing time is 10 min to 15 min, which ensures that the powder inside the preform body is fully bonded and helps to improve the processing efficiency.

[0049] Step S14: using a high-temperature sintering process to make the preform body into a phase shift mask base alloy target blank.

[0050] Specifically, after the preform body is made, a sintering temperature of 1600°C ± 30°C is used to high-temperature sinter the preform body to make the phase shift mask base alloy target blank 10. In the present embodiment, the preform body is high-temperature sintered at a sintering temperature of 1600°C ± 30°C. On the basis of sufficient sintering, it can be ensured that the generated substance is mainly MoSi2, and the grain size can be reduced to 30 μm to 50 μm, and the grain size distribution is more uniform.

[0051] Further, in one embodiment, the high-temperature sintering process is performed under the protection of inert gas or nitrogen. Specifically, the inert gas can be but is not limited to helium or argon. In order to effectively save costs, the protective gas is preferably nitrogen or argon. In the present embodiment, inert gas or nitrogen is used to form a protective atmosphere during high-temperature sintering to avoid volatilization and oxidation of the sintered material during high-temperature sintering, thereby ensuring the purity and performance of the phase shift mask base alloy target blank 10 made by sintering. Further, in one embodiment, to ensure the protection effect and improve the sintering efficiency and product quality, the gas flow rate of the inert gas or nitrogen is preferably 20 seem to 40 seem.

[0052] Step S15: welding the phase shift mask base alloy target blank with the back plate to make a phase shift mask base alloy target material. Specifically, after the phase shift mask base alloy target blank 10 is made, the phase shift mask base alloy target blank 10 is machined and then cleaned before being welded with the back plate to make a phase shift mask base alloy target material, and the phase shift mask base alloy target material manufacturing is completed.

[0053] The manufacturing method of the phase shift mask base alloy target material of the embodiment is used for manufacturing the phase shift mask base alloy target material, and the method introduces a carbon source during the manufacturing process of the phase shift mask base alloy target material to manufacture a preform body containing Mo, Si and carbon, and then the preform body is manufactured into a phase shift mask base alloy target blank through a high-temperature sintering process. The addition of carbon can form SiC and MoSi2 during the process of manufacturing the phase shift mask base alloy target blank through high-temperature sintering of the preform body, and the SiC and MoSi2 have good interfacial compatibility and thermodynamic stability, which can improve the grain boundary structure and increase the solid solubility of molybdenum in silicon to refine the grain size. It is proved through experiments that the average grain size of the molybdenum-silicon target material can be reduced from 150 μm to 300 μm (the average grain size of the traditional molybdenum-silicon target material without carbon element) to 30 μm to 50 μm by introducing carbon element into the molybdenum-silicon target material through the above-mentioned manufacturing method of the phase shift mask base alloy target material, so that the grain size is more uniform, the sputtering film forming uniformity is improved, the carbon-containing phase shift film with uniform thickness is formed, the film flatness is improved, and the sputtering film forming quality is improved. Moreover, the increase of the solid solubility of molybdenum in silicon can eliminate the inhomogeneity and non-solubility phenomenon in the micro area, form a more stable compound, and effectively improve the product stability of the manufactured phase shift mask base alloy target material.

[0054] In addition, the manufacturing method of the phase shift mask base alloy target material introduces a carbon source during the manufacturing process of the phase shift mask base alloy target material to manufacture a molybdenum-silicon alloy target material containing carbon element, so that the carbon source can be introduced into the phase shift film during the sputtering deposition process without introducing carbon-containing gas, which can effectively solve the technical problems of poor film forming quality, high production cost and safety hazards existing in the method of introducing carbon source into the phase shift film in the prior art.

[0055] The manufacturing method of the phase shift mask base alloy target material can improve the product stability of the phase shift mask base alloy target material, and effectively solve the technical problems of poor film forming quality, high production cost and safety hazards existing in the method of introducing carbon source into the phase shift film in the prior art.

[0056] The above description is only a description of the preferred embodiments of the present application, and does not limit the scope of the present application. Any modification or modification of the above-mentioned disclosure by a person skilled in the art belongs to the scope of the technical solution of the present application.

Claims

1. A phase-shifting mask substrate alloy target material, comprising a phase-shifting mask substrate alloy target blank and a back plate, wherein the phase-shifting mask substrate alloy target blank and the back plate are welded together, characterized in that, The phase-shifting mask substrate alloy target blank includes molybdenum, silicon, and carbon, with the mass ratio of carbon being 0.1% to 1%, and the mass ratio of molybdenum to silicon being 1:4 to 1:

9.

2. The phase-shifting mask substrate alloy target material according to claim 1, characterized in that, The average grain size of the phase-shifting mask substrate alloy target blank is 30μm~50μm.

3. A method for manufacturing the phase-shifting mask substrate alloy target as described in claim 1, characterized in that, Includes the following steps: High-purity Mo powder and Si powder are mixed evenly to obtain a Mo-Si mixed powder. A carbon-containing substance is added to the Mo and Si mixed powder and mixed evenly to obtain a carbon-containing Mo and Si mixed powder. The carbon-containing Mo and Si mixed powder was processed into a preform using an isostatic pressing process. The preform is processed into a phase-shifting mask substrate alloy target blank using a high-temperature sintering process. The phase-shifting mask substrate alloy target blank is welded to the back plate to form the phase-shifting mask substrate alloy target material.

4. The method for manufacturing the phase-shifting mask substrate alloy target according to claim 3, characterized in that, The step of uniformly mixing high-purity Mo powder and Si powder includes: ball milling the Mo powder and Si powder for 2-3 hours using a high-speed ball milling equipment at a ball milling speed of 2000 r / min to 5000 r / min.

5. The method for manufacturing the phase-shifting mask substrate alloy target according to claim 3, characterized in that, The step of adding a carbon-containing substance to the Mo and Si mixed powder and mixing it evenly includes: Add carbon-containing substances to the Mo and Si mixed powder; The Mo-Si mixed powder and the carbon-containing material were ball-milled for 1-2 hours using a high-speed ball mill at a ball milling speed of not less than 3000 r / min.

6. The method for manufacturing the phase-shifting mask substrate alloy target according to claim 5, characterized in that, The carbon-containing material is carbon powder, diamond powder, or pure carbon powder in any form.

7. The method for manufacturing the phase-shifting mask substrate alloy target according to claim 3, characterized in that, The isostatic pressing process has an isostatic pressure of 20MPa to 30MPa and / or an isostatic pressing time of not less than 10min.

8. The method for manufacturing the phase-shifting mask substrate alloy target according to claim 3, characterized in that, The sintering temperature of the high-temperature sintering process is 1600℃±30℃.

9. The method for manufacturing the phase-shifting mask substrate alloy target according to claim 3, characterized in that, The high-temperature sintering process involves sintering the preform at high temperatures under inert gas or nitrogen protection.

10. The method for manufacturing the phase-shifting mask substrate alloy target according to claim 9, characterized in that, The gas flow rate of the inert gas or the nitrogen is 20 sccm to 40 sccm.

Images