Manufacturing method of trench type metal oxide semiconductor field effect transistor

A technology of oxide semiconductor and field effect transistor, which is used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc.

CN103378146BInactive Publication Date: 2016-05-18上海永电电子科技有限公司
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2016-05-18
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to the electronic device field, and discloses a groove-type metal oxide semiconductor field-effect transistor and a production method thereof. According to the groove-type metal oxide semiconductor field-effect transistor and the production method thereof, grooves with different widths are formed with a two-stage field plate effect after being filled with polycrystalline silicon, so that electric field peaks can be transferred to the tail end of the field plate, that is, the bottom of the narrow polycrystalline silicon; and meanwhile, through length optimizing, the electric field peaks can be reduced, withstand voltages can be improved, unclamped inductive switching characteristics of the product are improved, on-resistance is reduced and breakover consumption of the product is reduced. The groove penetrates through an epitaxial layer and further goes into a substrate, so that an electric field is prevented from existing in the bottom of the groove, and the bottom is prevented from being brokendown.
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Description

technical field

[0001] The invention relates to the field of electronic devices, in particular to an ultra-deep trench metal oxide semiconductor field effect transistor. Background technique

[0002] In recent years, vertical double-diffused metal oxide semiconductor field effect transistor technology has developed rapidly, and has become one of the most important high-power mainstream devices in the field of power electronics. Low on-resistance and low power consumption are important directions for product pursuit. Therefore, metal The product structure of oxide semiconductor field effect transistors has also shifted from planar devices to trench devices. However, for traditional trench devices, the depth of the trench is all within the epitaxial layer, and in order to improve the withstand voltage of the product, most of the effort has been focused on how to better deal with the bottom of the trench, which has been able to obtain higher voltage.

[0003] In the prior art,...

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Embodiment Construction

[0029] In the following description, many technical details are proposed in order to enable readers to better understand the application. However, those skilled in the art can understand that without these technical details and various changes and modifications based on the following implementation modes, the technical solution claimed in each claim of the present application can be realized.

[0030] In order to make the purpose, technical solution and advantages of the present invention clearer, the following will further describe the implementation of the present invention in detail in conjunction with the accompanying drawings.

[0031] The first embodiment of the present invention relates to a trench metal oxide semiconductor field effect transistor. figure 2 It is a structural schematic diagram of the trench metal oxide semiconductor field effect transistor.

[0032] Specifically, as figure 2 As shown, the trench metal oxide semiconductor field effect transistor incl...