Packaging structure and manufacturing method of a high-current power semiconductor device

Abstract

The invention relates to a packaging structure and manufacturing method of a high-current power semiconductor device, which includes a heat sink, a semiconductor chip, a plastic package body and a chip mounting base island, the chip mounting base island is connected to the heat sink, and the third electrode on the back of the semiconductor chip is welded to the mounting plate. On the first surface of the substrate island, it is characterized in that the first electrode on the front side of the semiconductor chip is welded to one end of the first conductive metal sheet, the second electrode is welded to one end of the second conductive metal sheet, and the substrate island is packaged in the plastic package. The first surface, the semiconductor chip, the welding ends of the first and second conductive metal sheets, the heat sink, the second surface of the base island, and the other ends of the first and second conductive metal sheets are all exposed outside the plastic package as pins The present invention uses conductive metal sheets as pins to be directly welded with the electrodes of the semiconductor chip, which not only reduces the device packaging resistance, increases the device overcurrent capability, but also enhances the heat dissipation capability of the device, reduces the package thermal resistance, and improves the reliability of the device package.

Description

technical field

[0001] The invention relates to a packaging structure of a semiconductor device, in particular to a packaging structure of a high-current power semiconductor device, which belongs to the technical field of manufacturing semiconductor devices. Background technique

[0002] High-current and high-power semiconductor devices are constantly developing. Silicon-based trench semiconductor chips have entered the 1mR era. The packaging resistance of traditional semiconductor device packaging structures accounts for a large proportion of the overall resistance, sometimes exceeding the internal resistance of the chip itself. , In addition, the packaging thermal resistance of semiconductor devices is relatively large, and the packaging thermal resistance determines the maximum power loss of the device. If the packaging thermal resistance and parasitic resistance can be effectively reduced, the current capability and power of MOSFET and IGBT devices can be improved. There...

Examples

Embodiment 1

[0054] Embodiment 1 is package 100 SMD package form, image 3 and Figure 4 They are the front view and the rear view of the package 100 respectively. It can be seen from the figure that the semiconductor package 100 has two pins, which are the first conductive metal sheet 11 and the second conductive metal sheet 12 respectively, and the heat sink exposed at the bottom of the plastic package 3 1 is connected to the mounting base island 13, which can be regarded as the same component, and is made of the same material and the same processing technology, all of which are thermally and electrically conductive metal materials, such as copper, copper alloy, iron-nickel, aluminum, aluminum alloy, or Other conductive materials can also be understood as a component. The name and relationship between the heat sink 1 and the base island 13 are well known to engineers and technicians in the industry, so I won’t make too many descriptions here;

[0055] Figure 5 It is a perspective stru...

Embodiment 2

[0066] Embodiment 2 is in the form of package 200 in-line package, Figure 7 and Figure 8 They are the front view and the rear view of the package 200 respectively. From the front view, it is no different from the traditional TO-220, but from the rear view, the package 200 of this embodiment is different from the traditional TO-220 (such as figure 1 ) In contrast, the third electrode pin 14 of the package 200 is directly connected to the mounting base island 13 and is in the same plane, while the third electrode pin 14 of the traditional TO-220 is drawn out through the welding area 8 of the lead frame, and the mounting base The part of the island 13 and the third electrode pin 14 exposed outside the plastic package is not on the same plane.

[0067] like Figure 9 and 10 As shown, they are the internal structure and exploded view of the package 200 respectively. For the sake of simplification, the solder material has been omitted. The first conductive metal sheet 11 is use...

Embodiment 3

[0068] Embodiment 3 is an in-line packaging form of the package 300. In order to further improve the heat dissipation performance of the package 200, reduce the thermal resistance between the junctions, increase the current capacity, and reduce power loss, we thin the plastic package 3, and the second The bent portion 121 of the conductive metal sheet 12 is exposed outside the plastic package 3, such as Figure 12 and Figure 13 As shown, it is the appearance diagram and cross-sectional view of the package 300. Its structure is basically similar to that of the package 200. The main difference is that the thickness of the plastic package body 3 is only 1 / 5~1 / 2 of the original. Part of the second surface 132 and the heat sink 1 is exposed outside the plastic package 3, and the bent part 121 of the second conductive metal sheet 12 on the upper part is also exposed outside the plastic package 3, which achieves the effect of heat dissipation on both sides. The thermal resistance of...

technical field

[0001] The invention relates to a packaging structure of a semiconductor device, in particular to a packaging structure of a high-current power semiconductor device, which belongs to the technical field of manufacturing semiconductor devices. Background technique

[0002] High-current and high-power semiconductor devices are constantly developing. Silicon-based trench semiconductor chips have entered the 1mR era. The packaging resistance of traditional semiconductor device packaging structures accounts for a large proportion of the overall resistance, sometimes exceeding the internal resistance of the chip itself. , In addition, the packaging thermal resistance of semiconductor devices is relatively large, and the packaging thermal resistance determines the maximum power loss of the device. If the packaging thermal resistance and parasitic resistance can be effectively reduced, the current capability and power of MOSFET and IGBT devices can be improved. There...

Examples

Embodiment 1

[0054] Embodiment 1 is package 100 SMD package form, image 3 and Figure 4 They are the front view and the rear view of the package 100 respectively. It can be seen from the figure that the semiconductor package 100 has two pins, which are the first conductive metal sheet 11 and the second conductive metal sheet 12 respectively, and the heat sink exposed at the bottom of the plastic package 3 1 is connected to the mounting base island 13, which can be regarded as the same component, and is made of the same material and the same processing technology, all of which are thermally and electrically conductive metal materials, such as copper, copper alloy, iron-nickel, aluminum, aluminum alloy, or Other conductive materials can also be understood as a component. The name and relationship between the heat sink 1 and the base island 13 are well known to engineers and technicians in the industry, so I won’t make too many descriptions here;

[0055] Figure 5 It is a perspective stru...

Embodiment 2

[0066] Embodiment 2 is in the form of package 200 in-line package, Figure 7 and Figure 8 They are the front view and the rear view of the package 200 respectively. From the front view, it is no different from the traditional TO-220, but from the rear view, the package 200 of this embodiment is different from the traditional TO-220 (such as figure 1 ) In contrast, the third electrode pin 14 of the package 200 is directly connected to the mounting base island 13 and is in the same plane, while the third electrode pin 14 of the traditional TO-220 is drawn out through the welding area 8 of the lead frame, and the mounting base The part of the island 13 and the third electrode pin 14 exposed outside the plastic package is not on the same plane.

[0067] like Figure 9 and 10 As shown, they are the internal structure and exploded view of the package 200 respectively. For the sake of simplification, the solder material has been omitted. The first conductive metal sheet 11 is use...

Embodiment 3

[0068] Embodiment 3 is an in-line packaging form of the package 300. In order to further improve the heat dissipation performance of the package 200, reduce the thermal resistance between the junctions, increase the current capacity, and reduce power loss, we thin the plastic package 3, and the second The bent portion 121 of the conductive metal sheet 12 is exposed outside the plastic package 3, such as Figure 12 and Figure 13 As shown, it is the appearance diagram and cross-sectional view of the package 300. Its structure is basically similar to that of the package 200. The main difference is that the thickness of the plastic package body 3 is only 1 / 5~1 / 2 of the original. Part of the second surface 132 and the heat sink 1 is exposed outside the plastic package 3, and the bent part 121 of the second conductive metal sheet 12 on the upper part is also exposed outside the plastic package 3, which achieves the effect of heat dissipation on both sides. The thermal resistance of...

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