A method for preparing a high-temperature-resistant packaging frame for a silicon carbide diode

Abstract

The invention discloses a method for preparing a high-temperature-resistant packaging frame of a silicon carbide diode, which belongs to the field of semiconductor device manufacturing equipment. It is characterized in that the specific process curve of the low-temperature sintering step is: put the frame body (1) with silicon carbide grains (4) adhered with nano-silver paste into a vacuum welding furnace, and then fill with nitrogen gas when the vacuum is evacuated to 50~55mbar , heat up to 150~155°C at 10~12°C / min, then keep warm for 2~4min, then continue to heat up to 185~190°C, keep warm for 8~12min, then raise the temperature to 270~275°C, vacuum and fill nitrogen to 5bar~15bar Keep for 10-15 minutes to ensure the bonding strength, and then cool down, that is, the welding of the silicon carbide grains (4) and the frame main body (1) is completed. The invention utilizes two welding zones (cooling zone and heating zone) to cooperate with a special temperature curve, and a certain pressure is added during the welding process, which shortens the welding time and improves the production efficiency.

Description

technical field

[0001] The invention discloses a method for preparing a high-temperature-resistant packaging frame of a silicon carbide diode, which belongs to the field of semiconductor device manufacturing equipment. Background technique

[0002] With the development of microelectronics technology, traditional silicon and gallium arsenide semiconductor materials have increasingly shown their deficiencies and limitations in terms of high temperature, high frequency, optoelectronics, high power and radiation resistance due to their own structure and characteristics. sex. As we all know, it is difficult for silicon devices to work normally when the temperature of the PN junction is higher than 150°C, especially when high operating temperature, high power, high frequency, and strong radiation environmental conditions coexist, silicon devices cannot be "competent".

[0003] Silicon carbide has good characteristics such as large band gap, high breakdown electric field, high ele...

Examples

Embodiment approach 1

[0031] Other implementation mode 1: the basic structure and connection relationship are the same as the above-mentioned attached figure 1 , 2 As shown, the difference is that a nano-silver paste soldering layer 3 is provided on the crystal-bonding area 2, and a silicon carbide grain 4 and leads 5 connected to the left and right pins are welded on the nano-silver paste soldering layer 3.

Embodiment approach 2

[0032] Other implementation mode 2: the basic structure and connection relationship are the same as the above-mentioned attached figure 1 , 2 As shown, the difference is that the copper wires of the leads 5 are all replaced by aluminum wires.

[0033] Below through specific embodiment and in conjunction with appendix figure 1 The preparation method of a high-temperature-resistant packaging frame for a silicon carbide diode of the present invention will be further described, and the first embodiment is the best.

Embodiment 1

[0035] 1) Grain cutting: first paste the whole wafer on the UV film, use a laser cutting machine to cut the silicon carbide grain along the position of the grain cutting line, take it out and clean the surface of the silicon carbide grain 4 with pure water and dry it; The UV film used in the process has a high viscosity, 8000mN~10000mN, which is convenient for grain cutting and cleaning, and there will be no grain displacement or bruising;

[0036] 2) Screen printing: use a screen printing machine to evenly brush the nano-silver paste in the crystal-bonding area 2 on the copper frame to obtain the nano-silver paste welding layer 3;

[0037] 3) Solid crystal: Use a solid crystal machine to absorb silicon carbide grains 4 from the UV film irradiated by UV light and place them on the frame main body 1; after the UV film is illuminated, the viscosity becomes lower to 1000mN, and the solid crystal is made It is easy to absorb the die, and it is not easy to stick to the residual glu...

technical field

[0001] The invention discloses a method for preparing a high-temperature-resistant packaging frame of a silicon carbide diode, which belongs to the field of semiconductor device manufacturing equipment. Background technique

[0002] With the development of microelectronics technology, traditional silicon and gallium arsenide semiconductor materials have increasingly shown their deficiencies and limitations in terms of high temperature, high frequency, optoelectronics, high power and radiation resistance due to their own structure and characteristics. sex. As we all know, it is difficult for silicon devices to work normally when the temperature of the PN junction is higher than 150°C, especially when high operating temperature, high power, high frequency, and strong radiation environmental conditions coexist, silicon devices cannot be "competent".

[0003] Silicon carbide has good characteristics such as large band gap, high breakdown electric field, high ele...

Examples

Embodiment approach 1

[0031] Other implementation mode 1: the basic structure and connection relationship are the same as the above-mentioned attached figure 1 , 2 As shown, the difference is that a nano-silver paste soldering layer 3 is provided on the crystal-bonding area 2, and a silicon carbide grain 4 and leads 5 connected to the left and right pins are welded on the nano-silver paste soldering layer 3.

Embodiment approach 2

[0032] Other implementation mode 2: the basic structure and connection relationship are the same as the above-mentioned attached figure 1 , 2 As shown, the difference is that the copper wires of the leads 5 are all replaced by aluminum wires.

[0033] Below through specific embodiment and in conjunction with appendix figure 1 The preparation method of a high-temperature-resistant packaging frame for a silicon carbide diode of the present invention will be further described, and the first embodiment is the best.

Embodiment 1

[0035] 1) Grain cutting: first paste the whole wafer on the UV film, use a laser cutting machine to cut the silicon carbide grain along the position of the grain cutting line, take it out and clean the surface of the silicon carbide grain 4 with pure water and dry it; The UV film used in the process has a high viscosity, 8000mN~10000mN, which is convenient for grain cutting and cleaning, and there will be no grain displacement or bruising;

[0036] 2) Screen printing: use a screen printing machine to evenly brush the nano-silver paste in the crystal-bonding area 2 on the copper frame to obtain the nano-silver paste welding layer 3;

[0037] 3) Solid crystal: Use a solid crystal machine to absorb silicon carbide grains 4 from the UV film irradiated by UV light and place them on the frame main body 1; after the UV film is illuminated, the viscosity becomes lower to 1000mN, and the solid crystal is made It is easy to absorb the die, and it is not easy to stick to the residual glu...

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