The invention relates to a packaging structure of a high-current-
power semiconductor device and a manufacturing method. The packaging structure comprises a cooling fin, a
semiconductor chip, a plastic
package body and a
chip-holding island, wherein the
chip-holding island is connected with the cooling fin; and a third
electrode on a back side of the
semiconductor chip is welded on a first surface of the chip-holding island. The packaging structure is characterized in that a first
electrode on a front side of the
semiconductor chip is welded with one end of a first current-conducting
metal sheet; a second
electrode is welded with one end of a second current-conducting
metal sheet; the first surface of the chip-holding island, the
semiconductor chip, a
welding end of the first current-conducting
metal sheet and a
welding end of the second current-conducting
metal sheet are packaged in the plastic
package body; and the cooling fin, a second surface of the chip-holding island, the other end of the first current-conducting
metal sheet and the other end of the second current-conducting
metal sheet are exposed outside the plastic
package body. The current-conducting metal sheets are directly welded with the electrodes of the
semiconductor chip as pins, so that the package resistance of the device is lowered; the
overcurrent capability of the device is enhanced; the cooling capability of the device is enhanced; the package
thermal resistance is lowered; and the package reliability of the device is enhanced.