Substrate processing device, substrate processing method and storage medium

Abstract

Provided are a substrate processing device, a substrate processing method and a storage medium. The present invention prevents the lower surface of the substrate from being contaminated by the processing liquid used in cleaning the upper surface of the substrate. After the present invention rotates the substrate using a substrate holding rotating part while performing liquid processing on the upper and lower surfaces of the substrate in parallel, when both the liquid processing on the upper and lower surfaces of the substrate are completed, the control unit (18) first stops the processing liquid supply mechanism (73) from supplying the processing liquid to the upper surface of the substrate, and then stops the processing liquid supply mechanism (71) from supplying the processing liquid to the lower surface of the substrate.

Description

Technical Field

[0001] The present invention relates to a technology for supplying a processing liquid to a substrate to perform liquid processing. Background Art

[0002] In the manufacture of semiconductor devices, a cleaning liquid (e.g., a cleaning liquid or a rinse liquid) is supplied to the upper and lower surfaces of a substrate while the device-forming surface of the substrate such as a semiconductor wafer is set as the lower surface and the substrate such as a semiconductor wafer is held horizontally and rotated about a vertical axis to perform a cleaning process on the upper and lower surfaces of the substrate. In this case, there is also a case where a brush is brought into contact with the upper surface of the substrate to perform a physical cleaning process (Patent Document 1).

[0003] Patent Document 1: Japanese Patent Application Publication No. 2016-149470 Summary of the invention

[0004] Problem that the invention aims to solve

[0005] However, when cleaning is performed physically by bringing the brush into contact with the upper surface of the substrate, the mist of the processing liquid may increase due to deformation of the brush. In this case, the mist splashed in the atmosphere may not only adhere to the upper surface of the substrate, but also go around and adhere to the lower surface, causing surface contamination of the devices on the lower surface.

[0006] In addition, sometimes the mist of the processing liquid supplied to the upper surface of the substrate goes around to the lower surface of the substrate and adheres to the device forming surface of the lower surface. Sometimes the attached processing liquid contains unnecessary substances such as particles removed from the upper surface of the substrate, which sometimes causes the device forming surface to be contaminated.

[0007] An object of the present invention is to prevent the lower surface of a substrate from being contaminated due to deformation of a brush used for cleaning the upper surface of a substrate.

[0008] Another object of the present invention is to prevent the lower surface of a substrate from being contaminated by a processing liquid used for cleaning the upper surface of the substrate.

[0009] Solutions for solving problems

[0010] In order to achieve the above-mentioned purpose, the first aspect of the present invention provides a substrate processing device, which performs liquid processing on a substrate by supplying a processing liquid to the substrate, and the substrate processing device is characterized in that it comprises: a substrate holding and rotating portion, which holds the substrate and rotates the substrate; a processing liquid supply mechanism, which supplies the processing liquid to the upper surface of the substrate; and a brush, when the processing liquid is supplied by the processing liquid supply mechanism, the brush cleans the substrate while bringing a cleaning body into contact with the upper surface of the substrate and rotating the cleaning body, wherein the peripheral edge portion of the cleaning body of the brush has a shape that is warped outward when viewed from the side.

[0011] The second aspect of the present invention provides a substrate processing device, characterized in that in the substrate processing device of the first aspect, the brush includes a first cleaning body and a second cleaning body formed of a material harder than the first cleaning body, and the peripheral edge of the first cleaning body has a shape warped outward.

[0012] A third aspect of the present invention provides a substrate processing apparatus, characterized in that in the substrate processing apparatus of the second aspect, a plurality of the second cleaning bodies are arranged radially inward of the first cleaning body.

[0013] A fourth aspect of the present invention provides a substrate processing device, characterized in that, in the substrate processing device of the second aspect, the first cleaning body is a sponge-like material.

[0014] A fifth aspect of the present invention provides a substrate processing device, characterized in that in the substrate processing device of the second aspect, the second cleaning body is implanted hair.

[0015] In addition, in order to solve the above-mentioned problems, the present invention provides a substrate processing device, which performs liquid processing on a substrate by supplying a processing liquid to the substrate, and the substrate processing device is characterized in that it comprises: a substrate holding and rotating part, which holds the substrate and rotates the substrate; a first processing liquid supply mechanism, which supplies the processing liquid to the upper surface of the substrate; a second processing liquid supply mechanism, which supplies the processing liquid to the lower surface of the substrate; and a control unit, which controls the processing using the first processing liquid supply mechanism and the second processing liquid supply mechanism, wherein, after the liquid processing of the upper surface and the lower surface of the substrate is performed in parallel while the substrate is rotated by the substrate holding and rotating part, when the liquid processing of both the upper surface and the lower surface of the substrate is completed, the control unit first terminates the supply of the processing liquid to the upper surface of the substrate by the first processing liquid supply mechanism, and then terminates the supply of the processing liquid to the lower surface of the substrate by the second processing liquid supply mechanism.

[0016] Effects of the Invention

[0017] The present invention can prevent the lower surface of a substrate from being contaminated due to deformation of a brush used in cleaning the upper surface of a substrate.

[0018] In addition, the present invention can prevent the lower surface of the substrate from being contaminated by the processing liquid used for cleaning the upper surface of the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 It is a diagram showing a schematic configuration of a substrate processing system according to the first embodiment.

[0020] Figure 2 yes Figure 1 A schematic longitudinal cross-sectional view of a processing unit included in a substrate processing system.

[0021] Figure 3A , Figure 3B , Figure 3C as well as Figure 3D It is a figure which shows the shape of a brush in detail.

[0022] Figure 4A It is a figure which shows the detail of a board|substrate holding part.

[0023] Figure 4B It is a figure which shows the detail of a board|substrate holding part.

[0024] Figure 4C It is a figure which shows the detail of a board|substrate holding part.

[0025] Figure 4D It is a figure which shows the detail of a board|substrate holding part.

[0026] Figure 4E It is a figure which shows the detail of a board|substrate holding part.

[0027] Figure 5 It is a diagram showing the structure of a fluid supply system.

[0028] Fig. 6A , Figure 6B as well as Figure 6C The diagrams are for explaining the operation when the cleaning process and the drying process are performed.

[0029] Figure 7 1 is a flowchart showing the control operation of the processing liquid supply mechanism.

[0030] Description of Reference Numerals

[0031] 18: control unit; 31: substrate holding unit; 63: brush; 71: processing liquid supply mechanism; 73: processing liquid supply mechanism. DETAILED DESCRIPTION

[0032] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0033] (First Embodiment)

[0034] Figure 1 1 is a diagram showing a schematic configuration of a substrate processing system according to the present embodiment. In order to clarify the positional relationship, mutually orthogonal X-axis, Y-axis, and Z-axis are defined below, and the positive direction of the Z-axis is defined as the vertically upward direction.

[0035] like Figure 1 As shown, the substrate processing system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are provided adjacent to each other.

[0036] The loading / unloading station 2 includes a carrier placement unit 11 and a conveying unit 12. A plurality of carriers C for storing a plurality of wafers W (substrates) in a horizontal state are placed on the carrier placement unit 11.

[0037] The conveying unit 12 is disposed adjacent to the carrier placement unit 11, and includes a substrate conveying device 13 and a delivery unit 14 therein. The substrate conveying device 13 includes a substrate holding mechanism for holding the wafer W. In addition, the substrate conveying device 13 can move in the horizontal direction and the vertical direction and rotate around the vertical axis, and uses the substrate holding mechanism to convey the wafer W between the carrier C and the delivery unit 14.

[0038] The processing station 3 is provided adjacent to the conveying unit 12. The processing station 3 includes a conveying unit 15 and a plurality of processing units 16. The plurality of processing units 16 are provided on both sides of the conveying unit 15 in a row.

[0039] The conveying unit 15 includes a substrate conveying device 17 therein. The substrate conveying device 17 includes a substrate holding mechanism for holding the wafer W. The substrate conveying device 17 is capable of moving in the horizontal direction and the vertical direction and rotating around the vertical axis, and conveys the wafer W between the interface 14 and the processing unit 16 using the substrate holding mechanism.

[0040] The processing unit 16 performs predetermined substrate processing on the wafer W transported by the substrate transport device 17 .

[0041] In addition, the substrate processing system 1 includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 18 and a storage unit 19. The storage unit 19 stores programs for controlling various processes executed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the programs stored in the storage unit 19.

[0042] The program may be a program recorded in a computer-readable storage medium or a program installed from the storage medium into the storage unit 19 of the control device 4. Examples of computer-readable storage media include a hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), and a memory card.

[0043] In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 of the loading / unloading station 2 takes out the wafer W from the carrier C placed on the carrier placement portion 11, and places the taken-out wafer W on the delivery portion 14. The wafer W placed on the delivery portion 14 is taken out from the delivery portion 14 by the substrate transfer device 17 of the processing station 3 and is carried into the processing unit 16.

[0044] After the wafer W carried into the processing unit 16 is processed by the processing unit 16, the wafer W is carried out from the processing unit 16 by the substrate transfer device 17 and placed on the delivery unit 14. Then, the processed wafer W placed on the delivery unit 14 is returned to the carrier C of the carrier placement unit 11 by the substrate transfer device 13.

[0045] Next, refer to Figure 2 The schematic structure of the processing unit 16 will be described. Figure 2 yes Figure 1 1 is a schematic longitudinal cross-sectional view of a processing unit 16 included in the substrate processing system 1.

[0046] like Figure 2 As shown, the processing unit 16 includes a chamber 20, a substrate holding and rotating mechanism 30 (an example of a substrate holding and rotating unit) for holding and rotating the wafer W, a liquid ejecting unit 40 constituting a processing liquid supply nozzle, and a recovery cup 50 for recovering the processing liquid supplied to the wafer W.

[0047] The chamber 20 accommodates the substrate holding and rotating mechanism 30, the liquid ejection unit 40, and the recovery cup 50. A fan filter unit (FFU) 21 is provided on the top of the chamber 20. The FFU 21 is used to form a downward flow in the chamber 20.

[0048] The substrate holding and rotating mechanism 30 is configured as a mechanical chuck that holds the wafer W using a mechanical clamping mechanism. The substrate holding and rotating mechanism 30 includes a substrate holding portion 31 , a rotating shaft 32 , and a rotating motor (rotation driving portion) 33 .

[0049] The substrate holding portion 31 has a circular plate-shaped bottom plate (plate-shaped body) 31a and a plurality of supporting members 31b arranged on the peripheral portion of the bottom plate 31a. The supporting member 31b is formed on the upper portion of the bottom plate 31a to hold the peripheral edge of the wafer W. Thus, a lower space 83 is formed between the lower surface of the wafer W and the upper surface of the bottom plate 31a. In the present embodiment, several of the plurality of supporting members 31b are movable supporting members for switching the holding and release of the wafer W relative to the wafer W, and the remaining supporting members 31b are stationary supporting members. The details of the supporting members 31b will be described later. The rotating shaft 32 is hollow and extends downward in the vertical direction from the central portion of the bottom plate 31a. The rotary motor 33 drives the rotating shaft 32 to rotate, thereby rotating the wafer W held in a horizontal position by the substrate holding portion 31 around the vertical axis.

[0050] The liquid ejection part 40 is formed as a slender shaft-shaped member extending in the vertical direction. The liquid ejection part 40 has a hollow cylindrical shaft part 41 and a head part 42 extending in the vertical direction. The shaft part 41 is inserted into a cylindrical cavity 32a inside the rotating shaft 32 of the substrate holding rotating mechanism 30. The shaft part 41 is concentric with the rotating shaft 32. A space having a circular cross-section as a gas passage 80 is formed between the outer peripheral surface of the shaft part 41 and the inner peripheral surface of the rotating shaft 32.

[0051] A cylindrical cavity extending in the vertical direction is provided inside the liquid ejection part 40. A processing liquid supply pipe 43 is provided inside the cavity. The upper end of the processing liquid supply pipe 43 opens at the head 42 of the liquid ejection part 40, and becomes a liquid ejection port for ejecting the processing liquid toward the central part of the lower surface of the wafer W held by the substrate holding and rotating mechanism 30.

[0052] A prescribed processing liquid for processing the lower surface of the wafer W is supplied from the processing liquid supply mechanism 71 to the processing liquid supply pipe 43. A detailed description of the structure of the processing liquid supply mechanism 71 will be described later. In the present embodiment, the processing liquid supply mechanism 71 is a mechanism for supplying pure water (DIW), but it may also be configured to be able to supply a plurality of processing liquids, such as a cleaning solution (e.g., DHF) and a rinse liquid in a switchable manner. As a drying gas for drying the lower surface of the wafer W, nitrogen gas (N2) is supplied from the drying gas supply mechanism 72 (second gas supply mechanism) to the gas passage 80. A detailed description of the structure of the drying gas supply mechanism 72 will be described later.

[0053] The upper part of the liquid ejection part 40 (the head 42 and its lower vicinity) is surrounded by the cavity 32a of the rotating shaft 32. An annular gap is provided between the upper part of the liquid ejection part 40 and the cavity 32a, and the gap forms a gas ejection path 81 through which the drying gas passes.

[0054] On the upper surface of the central portion of the bottom plate 31a, a gas ejection port 35 is defined by the outer peripheral edge of the head portion 42 of the liquid ejection portion 40 and the surface of the substrate holding portion. The gas ejection port 35 is an annular ejection port that ejects the gas flowing through the annular gas ejection path 81 into the space 83 below the wafer W (the space between the wafer W and the bottom plate 31a).

[0055] The recovery cup 50 is arranged to surround the substrate holding portion 31 of the substrate holding rotation mechanism 30, and is used to collect the processing liquid scattered from the rotating wafer W. The recovery cup 50 has a stationary lower cup body 51 and a lower cup body 52 that can be raised in the upper position ( Figure 2 The upper cup 52 is raised and lowered between the position shown in the figure and the lowered position. The upper cup 52 is raised and lowered by the lifting mechanism 53. When the upper cup 52 is in the lowered position, the upper end of the upper cup 52 is located at a position lower than the wafer W held by the substrate holding and rotating mechanism 30. Therefore, when the upper cup 52 is in the lowered position, the upper end of the upper cup 52 can enter the chamber 20. Figure 1 The wafer W is transferred between the substrate holding mechanism (arm) of the substrate transfer device 17 and the substrate holding and rotating mechanism 30 .

[0056] An exhaust port 54 is formed at the bottom of the lower cup body 51. The collected atmosphere in the recovery cup 50 is discharged from the recovery cup 50 through the exhaust port 54. An exhaust pipe 55 is connected to the exhaust port 54, and the exhaust pipe 55 is connected to the factory exhaust system of the reduced pressure atmosphere (not shown). In addition, a drain port 56 is formed at the bottom of the lower cup body 51. The collected processing liquid is discharged from the recovery cup 50 through the drain port 56. A drain pipe 57 is connected to the drain port 56, and the drain pipe 57 is connected to the factory drain system (not shown).

[0057] The downflow of clean air from the FFU 21 is sucked into the recovery cup 50 through the upper opening of the recovery cup 50 (upper cup 52) and discharged from the exhaust port 54. Therefore, an airflow as indicated by arrow F is generated in the recovery cup 50.

[0058] The rectifying member 34 has a ring shape, and has the function of rectifying to generate the airflow of the arrow F and suppressing the rise of the gas and mist in the direction from the lower cup 51 to the upper cup 52. The upper end of the rectifying member 34 is located at a position lower than the bottom plate 31a, and is separated from the outer peripheral end of the bottom plate 31a by a gap d. When the size of the wafer W is 300mm, the outer peripheral end of the bottom plate 31a is located at a position closer to the outer peripheral side than the end of the wafer W, and the gap d is set to about 4mm, which is also preferred from the perspective of maximizing the function of the rectifying member 34, and the adhesion of particles to the lower surface of the wafer W is also minimized.

[0059] The processing unit 16 further includes at least one processing liquid supply nozzle 62, which supplies processing liquid (cleaning liquid and rinse liquid) to the upper surface of the wafer W held by the substrate holding and rotating mechanism 30. The processing unit 16 further includes a brush 63 for performing abrasive cleaning on the upper surface of the wafer W. The shape of the brush 63 will be described in detail later.

[0060] A predetermined processing liquid for processing the upper surface of the wafer W is supplied from the processing liquid supply mechanism 73 to the processing liquid supply nozzle 62. The gas supply port 61 is provided above the rotation center of the wafer W, and N2 as a drying gas for performing a drying process is supplied from the drying gas supply mechanism 74. The detailed description of the structures of the processing liquid supply mechanism 73 and the drying gas supply mechanism 74 will be described later.

[0061] Next, the shape of the brush 63 in this embodiment will be described in detail using FIG. 3 . Figure 3A , Figure 3B , Figure 3C as well as Figure 3D 63 is a diagram showing the details of the shape of the brush 63. Figure 3A A side view of the brush 63 according to the present embodiment is shown in FIG. Figure 3B 2 is a bottom view of the brush 63 according to the present embodiment.

[0062] like Figure 3A and Figure 3B As shown, the brush 63 includes a main body 631, a connecting portion 632, a first cleaning body 633, and a second cleaning body 634. The processing unit 16 is provided with an arm (not shown) that changes the relative position of the brush 63 and the wafer W while rotating the brush 63, and the connecting portion 632 is a member for connecting the arm and the main body 631 to apply a rotational force. The first cleaning body 633 and the second cleaning body 634 clean the wafer W by contacting the upper surface of the wafer W, thereby removing unnecessary substances such as particles. The first cleaning body 633 is a sponge-like cleaning body formed of PVA (polyvinyl alcohol) or the like. The second cleaning body 634 is a cleaning body with implanted hair formed of a material harder than the first cleaning body 633 (such as PP (polypropylene) or the like). The main body 631 and the connecting portion 632 are hollow cylindrical shapes, and the cleaning liquid sprayed from the front end of the supply pipe provided in the arm (not shown) passes through the hollow area and is guided to the opening 635. Then, the processing liquid is supplied to the contact surfaces between the first cleaning body 633 and the second cleaning body 634 and the wafer W from the opening 635 .

[0063] The first cleaning body 633 is a sponge-like material. Therefore, when the brush 63 is wetted with the processing liquid and contacts the wafer W, it may be Figure 3CThe side surface is deformed into a shape that is warped in the inner peripheral direction. The inventors speculate that the deformation is caused by the forming method of the first cleaning body 633 when the brush 63 is manufactured. In addition, since the first cleaning body 633 applies a pressing force to the surface of the wafer W, a lateral friction force is generated, and thus the degree of deformation increases during liquid processing.

[0064] When there is such an inward warping, the cleaning liquid that hits the side of the first cleaning body 633 is easy to be as Figure 3C As shown by the arrow, the centrifugal force generated by the rotation splashes upward obliquely, and the mist of the processing liquid increases. It is possible that the mist splashed in the atmosphere not only adheres to the upper surface of the wafer W, but also goes around and adheres to the lower surface, causing contamination of the device formation surface.

[0065] Therefore, it is preferred that Figure 3D As shown, the first cleaning body 633 is formed in a shape along the outer peripheral direction before being used in the cleaning process. Specifically, it is preferable that the peripheral edge of the first cleaning body 633 is formed in a shape that is warped outward when viewed from the side.

[0066] Therefore, even in actual use, it is difficult to Figure 3C Such deformation can suppress the generation of mist, thereby further suppressing the contamination of the device formation surface.

[0067] Figure 4A to Figure 4D This is a diagram for explaining the details of the substrate holding portion 31. Here, among the plurality of supporting members 31b, a movable supporting member is shown as a gripping portion 31b-1, and an immovable supporting member is shown as a wafer supporting portion 31b-2.

[0068] like Figure 4A As shown, the bottom plate 31a has a substantially circular upper surface shape, and cutouts C1 and C2 are formed around it. The cutouts C1 and C2 are alternately arranged at an angle interval of approximately 60°. The cutout C1 allows the gripping portion 31b-1 mounted on the lower portion of the bottom plate 31a to protrude upward from the bottom plate 31a. In addition, the cutout C2 is provided corresponding to the wafer holding claw (not shown) provided on the substrate holding mechanism of the substrate transport device 17, allowing the wafer holding claw to pass through the bottom plate 31a vertically.

[0069] In addition, as described above, a plurality of wafer support portions 31b-2 extending along the periphery are provided on the upper surface of the base plate 31a. Such wafer support portions 31b-2 are formed in cooperation with the cutout portions C1 and C2 of the base plate 31a. In addition, each wafer support portion 31b-2 has an upper surface flat portion 311 and an inclined surface 312 inclined toward the center of the base plate 31a. The outer periphery of the inclined surface 312 (the boundary between the upper surface flat portion 311 and the inclined surface 312) is located along the circumference of a first circle having a diameter larger than that of the wafer W, and the inner periphery of the inclined surface 312 is concentric with the first circle and is located along the circumference of a second circle having a diameter smaller than that of the wafer W. Therefore, when the wafer W is placed on the base plate 31a, the wafer W is supported by its edge being in contact with the inclined surface 312 (refer to Figure 4B ). At this time, the wafer W is separated from the upper surface of the base plate 31a.

[0070] In addition, guide pins 313 are provided on the upper surface flat portion 311 of the wafer support portion 31b-2. Figure 4B As shown, the side surface 313I of the guide pin 313 is in contact with the outer peripheral edge of the inclined surface 312 of the wafer support portion 31b-2 at the lower end. In addition, the guide pin 313 is formed with a guide inclined surface 313B inclined toward the center of the bottom plate 31a. Figure 1 ) When the wafer W is placed on the wafer support part 31b-2, the edge of the wafer W contacts the guide inclined surface 313B, and the wafer W is guided in a manner such that the edge of the wafer W slides down the guide inclined surface 313B, and the wafer W moves, thereby being positioned and supported by the wafer support part 31b-2.

[0071] Furthermore, the guide pins 313 have such a height that the upper surfaces of the guide pins 313 are located higher than the upper surfaces of the wafers W supported by the plurality of wafer supporting portions 31 b - 2 .

[0072] Figure 4C and Figure 4D 31a-1 and 31b-2 are respectively viewed from above. As shown in the figure, a groove G extending in a direction intersecting the periphery of the bottom plate 31a is formed in the substantially central portion of the guide pin 313 and the holding portion 31b-1 provided on the wafer supporting portion 31b-2. The groove G is not exactly oriented in the radial direction, but is inclined in the direction of the cleaning liquid flowing from the periphery of the wafer W during liquid processing, thereby reducing the amount of processing liquid that laterally hits the guide pin 313, further improving the effect of suppressing the generation of mist.

[0073] Figure 4E This is a modified example of the guide pin 313. The direction of the liquid toward the guide pin 313 differs depending on conditions such as the rotation speed during liquid processing. Figure 4EIt is the most optimized shape when the direction of the liquid is roughly circumferential. The inclined surface provided on the guide pin 313 faces outward, so the colliding processing liquid does not rebound to the side of the wafer W, but is mostly directed to the side of the recovery cup 50. This inclination is formed by grooving the entire guide pin 313 in the past, but the guiding inclined surface 313B maintains a shape close to the prototype, so it fully functions as a guiding member for the wafer W. In addition, in the above example, the case where the length of the upper surface flat portion 311 when viewed from above is sufficiently larger than the size of the guide pin 313 is described, but the same effect can be obtained even if it is only provided on the periphery of the guide pin 313 or omitted.

[0074] In this embodiment, Figure 5 2 shows the structure of a fluid supply system for supplying and discharging a processing liquid and a drying gas of the substrate processing system 1 . Figure 5 It is a diagram showing the structure of a fluid supply system.

[0075] exist Figure 5 In the drying gas supply mechanism 72, the drying gas supply source 401 is a supply source of the drying gas (N2) used in the drying process. The drying gas supply line 402 is a supply path for supplying the drying gas from the drying gas supply source 401 to the chamber 20. The on-off valve 403 is provided on the drying gas supply line 402 to control the start and stop of the supply of the drying gas to the chamber 20. The flow regulator 404 is provided on the drying gas supply line 402 to adjust the flow rate of the drying gas supplied from the drying gas supply line 402 to the chamber 20.

[0076] exist Figure 5 In the treatment liquid supply mechanism 71 (second treatment liquid supply mechanism), the treatment liquid supply source 405 is a supply source of the treatment liquid used in the liquid treatment, and is a supply source of pure water (DIW) as the treatment liquid in this embodiment. The treatment liquid supply line 406 is a supply path for supplying the treatment liquid from the treatment liquid supply source 405 to the chamber 20. The on-off valve 407 is provided in the treatment liquid supply line 406 to control the start and stop of the supply of the treatment liquid to the chamber 20. The flow regulator 408 is provided in the treatment liquid supply line 406 to adjust the flow rate of the treatment liquid supplied from the treatment liquid supply source 405 to the treatment liquid supply line 406.

[0077] Figure 5The drying gas supply mechanism 74 has the same structure as the drying gas supply mechanism 72. In the drying gas supply mechanism 74, the drying gas supply source 409 has the same function as the drying gas supply source 401, the drying gas supply line 410 has the same function as the drying gas supply line 402, the on-off valve 411 has the same function as the on-off valve 403, and the flow regulator 412 has the same function as the flow regulator 404.

[0078] exist Figure 5 In the treatment liquid supply mechanism 73 (first treatment liquid supply mechanism), the treatment liquid supply source 413 has the same function as the treatment liquid supply source 405, and the treatment liquid supply line 414 has the same function as the treatment liquid supply line 406. The treatment liquid supply source 415 is the supply source of DHF as the treatment liquid in this embodiment. The treatment liquid supply line 416 is a supply path for supplying the treatment liquid from the treatment liquid supply source 415 to the chamber 20. The switching valve 417 is connected to the treatment liquid supply line 414 and the treatment liquid supply line 416 to switch the mode of supplying DIW and DHF (dilute hydrofluoric acid) to the chamber 20 and control the start and stop of its supply. The flow regulator 418 is arranged on the treatment liquid supply line 414 to adjust the flow rate of the treatment liquid supplied from the treatment liquid supply source 413 to the treatment liquid supply line 414. The flow rate regulator 419 is provided in the processing liquid supply line 416 , and regulates the flow rate of the processing liquid supplied from the processing liquid supply source 415 to the processing liquid supply line 416 .

[0079] Next, the operation of the substrate processing apparatus in the present embodiment when performing the cleaning process and the drying process will be described using Fig. 6. Fig. 6 is a diagram for describing the operation of the substrate processing apparatus in the present embodiment when performing the cleaning process and the drying process.

[0080] In this embodiment, the upper surface and the lower surface of a wafer W having a radius of 150 mm are processed in parallel by a device, and these processes are performed in the order of (1) upper surface cleaning process / lower surface cleaning process, (2) upper surface cleaning (rinsing) process / lower surface cleaning process, and (3) upper surface drying process / lower surface drying process. Here, the description (A process / B process) shows the situation where the A process and the B process are performed in parallel, that is, at least a partial repetition period (time for simultaneously processing the upper surface and the lower surface) is set in the entire time of performing the respective processes of the upper surface and the lower surface to perform each other's processes. In addition, the control unit 18 controls the opening and closing valves and flow regulators of the processing liquid supply mechanism 71, the drying gas supply mechanism 72 (the second gas supply mechanism), the processing liquid supply mechanism 73, and the drying gas supply mechanism 74 (the first gas supply mechanism) to increase or decrease the supply amount of the fluid.

[0081] Fig. 6ASchematic diagram showing the action state of (1) upper surface cleaning process / lower surface cleaning process. In this action, wafer W is rotated at a specified rotation speed (for example, 1000 rpm). Here, with respect to the upper surface, DIW is supplied from the processing liquid supply nozzle 62 to the center of wafer W to form a liquid film on the surface of wafer W, so that the brush 63 abuts against the upper surface of wafer W and scans in the horizontal direction, thereby physically cleaning the surface of wafer W. Here, it is not limited to physical cleaning using the brush 63, and liquid treatment using DHF can also be performed. On the other hand, with respect to the lower surface, cleaning treatment is performed by supplying DIW from the processing liquid supply pipe 43 to the center of wafer W.

[0082] Figure 6B Schematic diagram showing the operation state of (2) upper surface cleaning (rinsing) processing / lower surface cleaning processing performed after cleaning processing (1). In this operation, wafer W is rotated at a predetermined rotation speed (e.g., 1000 rpm). Here, with respect to the upper surface, cleaning by brush 63 is stopped, and DIW is supplied from processing liquid supply nozzle 62 to the center of wafer W for cleaning (rinsing) processing. On the other hand, with respect to the lower surface, DIW is supplied from processing liquid supply pipe 43 to the center of wafer W for cleaning processing.

[0083] Figure 6C 3 is a schematic diagram showing the upper surface drying process / lower surface drying process performed after the cleaning process (2). Here, with respect to the upper surface, a drying gas (N2) is supplied from the gas supply port 61 to perform the upper surface drying process, and with respect to the lower surface, a drying gas (N2) is similarly supplied from the gas passage 80 to perform the drying process.

[0084] Next, use Figure 7 The control operation of the processing liquid supply mechanisms 71 and 73 during the cleaning process (1) and the cleaning process (2) will be described with reference to the flowcharts. Figure 7 1 is a flowchart showing the control operation of the processing liquid supply mechanisms 71 and 73. The processing in this flowchart is realized by the control unit 18 executing the substrate processing program stored in the storage unit 19.

[0085] First, the above-mentioned cleaning process (1) is started for the wafer W. Here, the cleaning liquid is not supplied to both surfaces from the beginning, but the processing liquid supply mechanism 71 first supplies the cleaning liquid only to the lower surface (the first starting process), and a liquid film of the cleaning liquid is formed on the lower surface of the wafer W (step S101). The supply time of the cleaning liquid here is not limited, as long as the liquid film can be formed.

[0086] Next, the processing liquid supply mechanism 73 supplies the cleaning liquid to the upper surface of the wafer W (second start step). Since the cleaning liquid is continuously supplied to the lower surface of the wafer W, the cleaning liquid is supplied to both surfaces (step S102).

[0087] Then, while the cleaning liquid films are formed on both surfaces by continuing the operation of step S102 , the brush 63 is moved in contact with the upper surface of the wafer W to clean the upper surface of the wafer W (step S103 ). The above corresponds to cleaning process ( 1 ).

[0088] After the cleaning process (1) is completed, as the cleaning process (2), the rinsing liquid is supplied to both surfaces of the wafer W (step S104). The supply of the rinsing liquid is continued for a time sufficient to remove the cleaning liquid and particles remaining on the wafer W.

[0089] Next, the processing liquid supply mechanism 73 stops supplying the rinsing liquid to the upper surface (the first end step), and the processing liquid supply mechanism 71 supplies the rinsing liquid only to the lower surface (step S105). This process is continued for a certain time, which is the time for the processing liquid remaining on the upper surface of the wafer W to be removed from the wafer W due to the centrifugal force generated by the rotation.

[0090] Then, the supply of the rinse liquid to the lower surface by the processing liquid supply mechanism 71 is stopped (second end step), and the drying process (3) is performed (step S106). When the drying process is completed, a series of processes are completed.

[0091] As described above, in the present embodiment, in the cleaning process (2), after the upper and lower surfaces of the wafer W are rinsed in parallel while the wafer W is rotated, when both the upper and lower surfaces of the wafer W are rinsed, the supply of the rinsing liquid to the upper surface of the wafer W is first terminated, and then the supply of the rinsing liquid to the lower surface of the wafer W is terminated. Thus, a liquid film is formed on the lower surface of the wafer W during the removal of the liquid from the upper surface, so that the lower surface of the wafer W, which is the device formation surface, can be prevented from being contaminated by the liquid flowing from the upper surface to the lower surface, the mist rising after the liquid hits the cup, and the like.

[0092] Here, the rinsing liquid is continuously supplied to the lower surface of the wafer W until the rinsing liquid remaining on the upper surface of the wafer W is removed from the upper surface of the wafer W due to the centrifugal force of the rotation of the wafer W. Thus, all the rinsing liquid that may have flowed around the lower surface disappears, thereby more reliably preventing contamination.

[0093] Furthermore, when the cleaning process (1) starts, the supply of the processing liquid to the lower surface of the wafer W is also started first, and then the supply of the processing liquid to the upper surface of the wafer W is started. Thus, even when the cleaning process starts when a large amount of contaminants are relatively attached, it is possible to prevent the contaminants from flowing from the upper surface to the lower surface.

[0094] Furthermore, the peripheral edge of the first cleaning body 633 (an example of a cleaning body) of the brush 63 of this embodiment has a shape that is warped outward when viewed from the side. This can reduce the phenomenon that the processing liquid that hits the brush 63 is atomized due to the rotation of the brush 63, and can prevent the wafer W from being contaminated by the processing liquid on the upper surface.

[0095] Furthermore, the groove G located at the center of one guide pin 313 and facing outward is oriented in the direction of the liquid flow formed along the peripheral edge of the wafer W. Thus, the collision of the liquid flow against the guide pin 313 during the cleaning process can be suppressed to a minimum, and the generation of mist due to splashing can be prevented.

[0096] Furthermore, by providing the rectifying member 34 in the recovery cup 50 and setting the radius of the bottom plate 31 a larger than the radius of the wafer W, the mist in the recovery cup 50 can be prevented from rising and from adhering to the lower surface of the wafer W.

Claims

1. A substrate processing device for performing liquid processing on a substrate by supplying a processing liquid to the substrate, the substrate processing device being characterized in that: a substrate holding and rotating unit that holds a substrate and rotates the substrate; a processing liquid supply mechanism that supplies the processing liquid to the upper surface of the substrate; and a brush that cleans the substrate while bringing a cleaning body into contact with the upper surface of the substrate and rotating the cleaning body when the processing liquid is supplied by the processing liquid supply mechanism, in, The outer peripheral side wall of the cleaning body of the brush is in a shape that is warped outward in a side view.

2. The substrate processing device according to claim 1, characterized in that: The brush includes a first cleaning body and a second cleaning body formed of a material harder than the first cleaning body, and the peripheral edge of the first cleaning body has a shape that is warped outward.

3. The substrate processing device according to claim 2, characterized in that: A plurality of the second cleaning elements are arranged radially inward of the first cleaning element.

4. The substrate processing device according to claim 2, characterized in that: The first cleaning body is a sponge-like material.

5. The substrate processing device according to claim 2, characterized in that: The second cleaning body is a transplanted hair.

6. A substrate processing device for performing liquid processing on a substrate by supplying a processing liquid to the substrate, the substrate processing device being characterized by comprising: a substrate holding and rotating unit that holds a substrate and rotates the substrate; a first processing liquid supply mechanism for supplying processing liquid to the upper surface of the substrate; a second processing liquid supply mechanism that supplies processing liquid to the lower surface of the substrate; and a control unit that controls the processing using the first processing liquid supply mechanism and the second processing liquid supply mechanism, in, After the liquid treatment of the upper surface and the lower surface of the substrate is performed in parallel while the substrate is rotated by the substrate holding and rotating unit, when both the liquid treatment of the upper surface and the liquid treatment of the lower surface of the substrate are completed, the control unit first causes the first processing liquid supply mechanism to stop supplying the processing liquid to the upper surface of the substrate, and then causes the second processing liquid supply mechanism to stop supplying the processing liquid to the lower surface of the substrate. The substrate processing device further comprises: a recovery cup for collecting the processing liquid scattered from the rotating substrate; a gas supply mechanism for supplying a gas for forming a downflow from above the substrate; an exhaust port for exhausting the airflow generated by the downflow entering the recovery cup; and a rectifying member disposed between the substrate holding rotating portion and the recovery cup, and rectifying the airflow so as to direct the airflow toward the exhaust port, The substrate holding and rotating part has a bottom plate for rotating the substrate. The outer peripheral end of the bottom plate is located on the outer peripheral side of the end of the base plate, the upper end of the rectifying member is located lower than the outer peripheral end of the bottom plate, and the upper end of the rectifying member is spaced apart from the outer peripheral end of the bottom plate.

7. The substrate processing device according to claim 6, characterized in that: The control unit first stops the supply of processing liquid to the upper surface of the substrate by the first processing liquid supply mechanism, and after the remaining processing liquid is removed from the upper surface of the substrate due to the centrifugal force of the rotation of the substrate, stops the supply of processing liquid to the lower surface of the substrate by the second processing liquid supply mechanism.

8. The substrate processing device according to claim 6 or 7, characterized in that: When starting liquid processing on both the upper and lower surfaces of the substrate, the control unit first starts the supply of processing liquid to the lower surface of the substrate by the second processing liquid supply mechanism, and then starts the supply of processing liquid to the upper surface of the substrate by the first processing liquid supply mechanism.

9. The substrate processing device according to claim 6 or 7, characterized in that: A brush is further provided, which cleans the substrate while bringing a cleaning body into contact with the upper surface of the substrate and rotating the cleaning body when the upper surface of the substrate is subjected to liquid treatment. The peripheral edge of the cleaning body of the brush has a shape that is warped outward in a side view.

10. The substrate processing device according to claim 6 or 7, characterized in that: The substrate holding and rotating unit comprises: a bottom plate for rotating the substrate; A supporting member, which is disposed above the bottom plate and supports the substrate; as well as a plurality of guide pins, the plurality of guide pins being provided above the bottom plate and guiding the substrate conveyed from outside the device to a position where the substrate is supported by the support member, Each of the plurality of guide pins has a groove extending in a direction intersecting the periphery of the base plate, and the groove is inclined in a direction of the processing liquid flowing from the periphery of the substrate during the liquid processing.

11. A substrate processing method, using a substrate processing device to perform liquid processing on a substrate by supplying a processing liquid to the substrate, the substrate processing device comprising: a substrate holding and rotating unit that holds a substrate and rotates the substrate; a first processing liquid supply mechanism for supplying processing liquid to the upper surface of the substrate; a second processing liquid supply mechanism, which supplies the processing liquid to the lower surface of the substrate; a recovery cup for collecting the processing liquid scattered from the rotating substrate; a gas supply mechanism for supplying a gas for forming a downflow from above the substrate; an exhaust port for exhausting the airflow generated by the downflow entering the recovery cup; and a rectifying member disposed between the substrate holding rotating portion and the recovery cup, and rectifying the airflow so as to direct the airflow toward the exhaust port, in, The substrate holding and rotating part has a bottom plate for rotating the substrate. The outer peripheral end of the bottom plate is located at a position closer to the outer peripheral side than the end of the base plate, the upper end of the rectifying member is located at a position lower than the outer peripheral end of the bottom plate, and the upper end of the rectifying member is spaced apart from the outer peripheral end of the bottom plate, The substrate processing method is characterized in that it includes the following steps: a treatment liquid supplying step of holding the substrate and rotating the substrate, supplying the treatment liquid to the upper surface of the substrate and supplying the treatment liquid to the lower surface of the substrate, thereby performing liquid treatment on the upper surface and the lower surface of the substrate in parallel; a first terminating step of terminating the supply of the processing liquid to the upper surface of the substrate after the processing liquid supplying step; and The second ending step ends the supply of the processing liquid to the lower surface of the substrate after the first ending step.

12. The substrate processing method according to claim 11, characterized in that: In the second termination step, after the supply of the processing liquid to the upper surface of the substrate is terminated and the remaining processing liquid is removed from the upper surface of the substrate due to the centrifugal force of the rotation of the substrate, the supply of the processing liquid to the lower surface of the substrate is terminated.

13. The substrate processing method according to claim 11 or 12, characterized in that: It also includes the following processes: a first starting step of starting supply of a processing liquid to the lower surface of the substrate first when starting liquid processing of both the upper surface and the lower surface of the substrate; and The second starting step is to start supplying the processing liquid to the upper surface of the substrate after the first starting step.

14. A storage medium, A program for executing the substrate processing method according to any one of claims 11 to 13 is stored. 15 . A computer program product comprising a program for executing the substrate processing method according to claim 11 .

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