Image sensor and method of manufacturing the same

Abstract

An image sensor and a method for manufacturing the same are provided, wherein the image sensor includes: a substrate including a first sensing region having a photoelectric device therein; a boundary isolation film separating the first sensing region; an internal reflection pattern film within the substrate in the first sensing region; an infrared filter on the substrate; and a microlens on the infrared filter.

Description

Technical Field

[0001] The present disclosure relates to image sensors and methods of manufacturing the same. Background Art

[0002] Image sensors convert optical images into electrical signals. A complementary metal oxide semiconductor (CMOS) image sensor (CIS) includes a plurality of pixels arranged two-dimensionally. Each pixel includes a photodiode to convert incident light into an electrical signal.

[0003] In recent years, according to the development of the computer and communication industries, the demand for image sensors with enhanced performance has increased in various fields such as digital cameras, camcorders, personal communication systems (PCS), game devices, security cameras, medical micro cameras, robots, etc. In addition, highly integrated semiconductor devices have enabled image sensors to be highly integrated. Summary of the Invention

[0004] According to one embodiment, an image sensor is provided, comprising: a substrate having a first sensing region having a photoelectric device therein; a boundary isolation film separating the first sensing region; an internal reflection pattern film within the substrate in the first sensing region; an infrared filter on the substrate; and a microlens formed on the infrared filter.

[0005] According to another embodiment, an image sensor is provided, which includes: a substrate having a first sensing area and a second sensing area, each of the first sensing area and the second sensing area having a photoelectric device therein; a boundary isolation film defining a boundary between the first sensing area and the second sensing area; an internal reflection pattern film formed within the substrate in the second sensing area; a first filter formed on the first sensing area of ​​the substrate; a second filter formed on the second sensing area of ​​the substrate, wherein the second filter is different from the first filter; a first microlens formed on the first filter; and a second microlens formed on the second filter.

[0006] According to yet another embodiment, an image sensor is provided, comprising: a substrate including a first surface and a second surface opposite to each other and a first sensing region having a photoelectric device therein; an insulating structure on the first surface and including a line structure; a boundary isolation film on the second surface and extending into the substrate and defining the first sensing region; an internal reflection pattern film formed within the first sensing region and extending into the substrate and including the same material as the boundary isolation film; a filter on the second surface that transmits only light of a certain wavelength; and a microlens formed on the filter.

[0007] According to one embodiment, a method for manufacturing an image sensor is provided, comprising: providing a substrate having a first surface and a second surface opposite to each other, wherein the substrate includes a photoelectric device therein; forming an insulating structure including a line structure on the first surface; forming a boundary isolation film defining a sensing area of ​​the substrate; forming an internal reflection pattern film within the sensing area; and forming a filter and a microlens on the second surface.

[0008] According to one embodiment, an image sensor is provided, comprising: a substrate including an infrared sensing region and a color sensing region, each having a photoelectric device therein; a boundary isolation film defining a boundary between the infrared sensing region and the color sensing region; an internal reflection pattern film within the substrate in the infrared sensing region; a color filter on the color sensing region of the substrate; and an infrared filter on the infrared sensing region of the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Features will become apparent to those skilled in the art by describing in detail exemplary embodiments with reference to the accompanying drawings, in which:

[0010] Figure 1 A block diagram of an image sensor is shown, according to some example embodiments.

[0011] Figure 2 Show Figure 1 Equivalent circuit diagram of the sensor array.

[0012] Figure 3 Detailed description is provided of a layout diagram provided to illustrate an image sensor according to some example embodiments.

[0013] Figure 4 Shown in Figure 3 A cross-sectional view taken on line AA'.

[0014] Figure 5 The figure is provided to illustrate that when infrared light is incident on Figure 4 A conceptual diagram of the operation when the sensor is on is shown in FIG.

[0015] Figure 6 Detailed description is provided of a layout diagram provided to illustrate an image sensor according to some example embodiments.

[0016] Figure 7 Detailed description is provided of a layout diagram provided to illustrate an image sensor according to some example embodiments.

[0017] Figure 8 Detailed description is provided of a layout diagram provided to illustrate an image sensor according to some example embodiments.

[0018] Figure 9Shown are cross-sectional views provided to explain an image sensor according to some example embodiments.

[0019] Figure 10 Shown are cross-sectional views provided to explain an image sensor according to some example embodiments.

[0020] Figure 11 Detailed description is provided of a layout diagram provided to illustrate an image sensor according to some example embodiments.

[0021] Figure 12 Shown in Figure 11 A cross-sectional view taken on line BB'.

[0022] Figure 13 The figure is provided to illustrate that when infrared light is incident on Figure 12 A conceptual diagram of the operation when the sensor is on is shown in FIG.

[0023] Figure 14 Detailed description is provided of a layout diagram provided to illustrate an image sensor according to some example embodiments.

[0024] Figure 15 Detailed description is provided of a layout diagram provided to illustrate an image sensor according to some example embodiments.

[0025] Figure 16 Shown in Figure 15 A cross-sectional view taken on line CC'.

[0026] Figure 17 Detailed description is provided of a layout diagram provided to illustrate an image sensor according to some example embodiments.

[0027] Figures 18 to 24 Views illustrating stages in a method of manufacturing an image sensor according to some example embodiments.

[0028] Figures 25 to 28 Views illustrating stages in a method of manufacturing an image sensor according to some example embodiments. DETAILED DESCRIPTION

[0029] In the following, reference will be made to Figures 1 to 5 Image sensors according to some example embodiments are described. Figure 1 is a block diagram provided to illustrate an image sensor according to some example embodiments, Figure 2 yes Figure 1 Equivalent circuit diagram of the sensor array in . Figure 3 is a layout diagram provided to illustrate an image sensor according to some example embodiments, Figure 4 is Figure 3 A cross-sectional view taken on line AA'. Figure 5is provided to illustrate that when infrared light is incident on Figure 4 A conceptual diagram of the operation when the sensor is on is shown in FIG.

[0030] Reference Figure 1 , an image sensor according to some exemplary embodiments includes a sensor array 10, a timing generator 20, a row decoder 30, a row driver 40, a correlated double sampler (CDS) 50, an analog-to-digital converter (ADC) 60, a latch 70, a column decoder 80, and the like.

[0031] The sensor array 10 includes a plurality of unit pixels arranged two-dimensionally. These unit pixels convert an optical image into electrical output signals. The sensor array 10 receives a plurality of drive signals, including a row select signal, a reset signal, a charge transfer signal, and the like, and is driven accordingly. Furthermore, the converted electrical output signals are provided to the correlated double sampler 50 via vertical signal lines.

[0032] The timing generator 20 provides timing signals and control signals to the row decoder 30 and the column decoder 80 .

[0033] The row driver 40 provides a plurality of driving signals to the sensor array 10 to drive a plurality of unit pixels according to the decoding result at the row decoder 30. Generally, when the unit pixels are arranged in a matrix form, a driving signal is provided to each of the rows.

[0034] The correlated double sampler 50 receives the output signal from the sensor array 10 through the vertical signal line and holds and samples the received signal. That is, the correlated double sampler 50 double samples a certain noise level and signal level based on the output signal and outputs a difference level corresponding to the difference between the noise level and the signal level.

[0035] The analog / digital converter 60 converts the analog signal corresponding to the difference level into a digital signal and outputs the conversion result.

[0036] The latch 70 latches the digital signal, and the latched signal is sequentially output to the image signal processor according to the decoding result at the column decoder 80 .

[0037] Reference Figure 2 , pixels P are arranged in a matrix pattern to constitute a sensor array 10. Each of the pixels P includes a phototransistor 11, a floating diffusion region 13, a charge transfer transistor 15, a drive transistor 17, a reset transistor 18, and a select transistor 19. These functions will be described with reference to the pixels in the i-th row (P(i,j), P(i,j+1), P(i,j+2), P(i,j+3), ...) as an example.

[0038] The phototransistor 11 absorbs incident light and accumulates charges corresponding to the amount of light. As the phototransistor 11, although a photodiode is shown in the figure as an example, a photodiode, a phototransistor, a photogate, a pinned photodiode, or a combination thereof may be applied.

[0039] Each of the phototransistors 11 is coupled to each of the charge transfer transistors 15 that transfers accumulated charges to the floating diffusion area 13. The floating diffusion area 13 is a region where charges are converted into voltage, and charges are cumulatively stored due to parasitic capacitance.

[0040] The driving transistor 17 exemplified here as a source follower amplifier amplifies the potential change of the floating diffusion 13 to which the accumulated charge of each of the phototransistors 11 is transferred, and outputs the amplified result to the output line Vout.

[0041] The reset transistor 18 periodically resets the floating diffusion 13. The reset transistor 18 may be composed of a MOS transistor driven by a bias voltage supplied from a reset line RX(i) for applying a predetermined bias voltage (i.e., a reset signal). When the reset transistor 18 is turned on by the bias voltage supplied from the reset line RX(i), a predetermined potential supplied at the drain of the reset transistor 18, such as the power supply voltage VDD, is transmitted to the floating diffusion 13.

[0042] The selection transistor 19 selects the pixels P to be read in rows. The selection transistor 19 may be composed of a MOS transistor driven by a bias voltage (i.e., a row selection signal) supplied to the selection line SEL(i). When the selection transistor 19 is turned on by the bias voltage supplied to the selection line SEL(i), a predetermined potential supplied to the drain of the selection transistor 19, such as the power supply voltage VDD, is transferred to the drain region of the driver transistor 17.

[0043] The transfer line TX(i) for applying a bias voltage to the charge transfer transistor 15, the reset line RX(i) for applying a bias voltage to the reset transistor 18, and the row selection line SEL(i) for applying a bias voltage to the selection transistor 19 can be arranged in the row direction to extend substantially parallel to each other.

[0044] For the sake of brevity, the description of the i+1th row of pixels (P(i+1,j), P(i+1,j+1), P(i+1,j+2), P(i+1,j+3), ...), the row selection line SEL(i+1), the reset line RX(i+1) and the transmission line TX(i+1) will be omitted.

[0045] Figure 3 and 4 Show Figure 2 The structure around the phototransistor 11. Figure 2The phototransistor 11 may correspond to Figure 4 The first optoelectronic device 110 is provided.

[0046] Reference Figure 3 and 4 An image sensor according to some example embodiments includes a substrate 100, a first photoelectric device 110, a boundary isolation film 130, an internal reflection pattern film 150, a first fixed charge film 160, a first anti-reflection film 170, a first lower planarization film 180, a first side anti-reflection film 190, an infrared (IR) filter 200, a first upper planarization film 210, a first microlens 220, and a first protective film 230.

[0047] The substrate 100 may include a first surface 100a and a second surface 100b opposite to each other. The first surface 100a of the substrate 100 may be the front surface of the substrate 100, for example, the bottom surface farthest from where light is incident on the image sensor, and the second surface 100b of the substrate may be the back surface of the substrate 100, for example, the top surface closest to where light is incident on the image sensor. However, exemplary embodiments are not limited to the examples given above.

[0048] For example, the substrate 100 may use a P-type or N-type bulk substrate, or may use a P-type or N-type epitaxial layer grown on a P-type bulk substrate, or may use a P-type or N-type epitaxial layer grown on an N-type bulk substrate. Furthermore, substrates other than semiconductor substrates may also be used for the substrate 100, such as organic plastic substrates.

[0049] The first sensing region S1 may be formed within the substrate 100. Specifically, the first sensing region S1 may be a region where incident infrared light is sensed using the infrared filter 200. The first sensing region S1 may be defined by a boundary isolation film 130 to be described below.

[0050] A first photoelectric device 110, such as a photodiode, is formed within the substrate 100 in the first sensing region S1. The first photoelectric device 110 may be formed near the first surface 100a of the substrate 100, but exemplary embodiments are not limited to any specific example. The first photoelectric device 110 may be Figure 2 The phototransistor 11 is a photodiode, a phototransistor, a photogate, a pinned photodiode or a combination thereof.

[0051] Boundary isolation film 130 may be formed within substrate 100. Boundary isolation film 130 may define a first sensing region S1 within substrate 100. Boundary isolation film 130 may be formed on the edge of first sensing region S1. Due to the presence of boundary isolation film 130, first sensing region S1 may be defined as a closed space. The planar cross-sectional shape of boundary isolation film 130 may be a closed curve in the shape of a ring.

[0052] The boundary isolation film 130 may be formed within the boundary isolation trench 120. The boundary isolation trench 120 may be formed by etching into the substrate 100 in a depth direction. The boundary isolation trench 120 may be formed in the second surface 100b of the substrate 100 and may extend in a direction toward the first surface 100a. The boundary isolation trench 120 may not reach the first surface 100a of the substrate 100.

[0053] In one example, the depth of the boundary isolation trench 120 may be less than the depth of the first optoelectronic device 110. For example, the bottom surface of the boundary isolation trench 120 may be farther from the first surface 100a than the top surface of the first optoelectronic device 110. This is to prevent damage to the first optoelectronic device during the formation of the boundary isolation trench 120. However, exemplary embodiments are not limited to the examples given above.

[0054] In the image sensor according to some embodiments, when the boundary isolation trench 120 is formed at a sufficiently horizontal distance away from the first photoelectric device 110 , the depth of the boundary isolation trench 120 may become deeper than the depth at which the first photoelectric device 110 is located.

[0055] like Figure 4 As shown in FIG, the side or side surface of the boundary isolation trench 120 may have a tapered shape. Specifically, the width of the boundary isolation trench 120 may gradually decrease in a downward direction, for example, toward the first surface 100a, and may gradually increase in an upward direction, for example, toward the second surface 100b. However, exemplary embodiments are not limited to the examples given above.

[0056] As shown in the figure, the boundary isolation trench 120 may be filled with a fixed charge film 160 and a first anti-reflection film 170 formed on the fixed charge film 160 to form a boundary isolation film 130 to be described below. Alternatively, the boundary isolation trench 120 may be filled with one material.

[0057] like Figure 4As shown in FIG, the boundary isolation film 130 may include a fixed charge film 160 and a first anti-reflection film 170. For example, the boundary isolation film 130 may include at least one of silicon oxide, silicon nitride, silicon oxynitride, and a low-k dielectric material having a dielectric constant smaller than that of silicon oxide. For example, the low-k dielectric material may include flowable oxide (FOX), toner silazene (TOSZ), undoped silica glass (USG), borosilicate glass (BSG), phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), plasma-enhanced tetraethyl orthosilicate (PETEOS), fluorinated silicate glass (FSG), carbon-doped silicon oxide (CDO), xerogel, aerogel, amorphous fluorinated carbon, organosilicate glass (OSG), parylene, bisbenzocyclobutene (BCB), SiLK, polyimide, a porous polymer material, or a combination thereof, but is not limited thereto.

[0058] The internal reflection pattern groove 140 may be formed by etching into the substrate 100 in a depth direction. The internal reflection pattern groove 140 may be formed in the second surface 100b of the substrate 100 and may extend in a direction toward the first surface 100a. The internal reflection pattern groove 140 may not reach the first surface 100a of the substrate 100.

[0059] In one example, the depth of the internal reflection pattern groove 140 may be less than the depth of the first photoelectric device 110. Therefore, damage to the first photoelectric device 110 during formation of the internal reflection pattern groove 140 may be prevented.

[0060] The depth of the inner reflection pattern trench 140 may be shallower than that of the boundary isolation trench 120. For example, the bottom surface of the inner reflection pattern trench 140 may be farther from the first surface 100a than the bottom surface of the boundary isolation trench 120. However, exemplary embodiments are not limited to the above examples. The depth of the inner reflection pattern trench 140 may be the same as or deeper than that of the boundary isolation trench 120.

[0061] When the depth of the boundary isolation trench 120 increases to be almost close to the depth of the first optoelectronic device 110, and when the depth of the inner reflection pattern trench 140 is the same as the depth of the boundary isolation trench 120, the first optoelectronic device 110 may be easily damaged. Therefore, in one example, the depth of the inner reflection pattern trench 140 may be shallower than the depth of the boundary isolation trench 120.

[0062] In image sensors according to some exemplary embodiments, when the depth of the boundary isolation trench 120 is not close to the first optoelectronic device 110, the depth of the internal reflection pattern trench 140 may be the same as that of the boundary isolation trench 120. Because this arrangement enables the boundary isolation trench 120 and the internal reflection pattern trench 140 to be formed simultaneously using a single etching process, the manufacturing cost of the image sensor according to some exemplary embodiments can be minimized, and process waste can also be reduced. In addition, as the process difficulty is reduced, the yield rate of the image sensor can be improved.

[0063] The internal reflection pattern film 150 can completely fill the internal reflection pattern groove 140. Therefore, when the internal reflection pattern film 150 and the boundary isolation film 130 are not connected, for example, when the upper surfaces of the fixed charge film 160 and the first anti-reflection film 170 do not extend above the second surface 100b, the upper surface of the internal reflection pattern film 150 can be at the same height as the second surface 100b of the substrate 100. The same applies to the boundary isolation film 130. That is, the upper surface of the boundary isolation film 130, the second surface 100b of the substrate 100, and the upper surface of the internal reflection pattern film 150 can be flush with each other.

[0064] The internal reflection pattern film 150 may be formed within the first sensing region S1. For example, it may overlap the first sensing region in a vertical direction, such as the direction of light incidence. The internal reflection pattern film 150 may be aligned with the center of the first sensing region S1. The internal reflection pattern film 150 may separate the first sensing region S1 into multiple regions. The internal reflection pattern film 150 may contact the boundary isolation film 130. Therefore, the internal reflection pattern film 150 and the boundary isolation film 130 may be connected to each other, thereby isolating the multiple regions in a horizontal cross-section.

[0065] Unlike the illustration, in an image sensor according to some exemplary embodiments, the inner reflection pattern film 150 and the boundary isolation film 130 may not be in contact with each other. That is, the inner reflection pattern film 150 may have a shape such that the inner reflection pattern film 150 is surrounded by the boundary isolation film 130 defining the first sensing area S1 in a horizontal cross-section but is not in contact with each other.

[0066] Like the boundary isolation film 130, the internal reflection pattern film 150 may include a fixed charge film 160 and a first anti-reflection film 170. However, exemplary embodiments are not limited to the above examples. The internal reflection pattern film 150 may include a single material. In this case, the first fixed charge film 160 and the first anti-reflection film 170 may be formed on the internal reflection pattern film 150.

[0067] For example, the internal reflection pattern film 150 may include at least one of silicon oxide, silicon nitride, silicon oxynitride, and a low-k dielectric material having a smaller dielectric constant than silicon oxide.

[0068] The first fixed charge film 160 may be formed on the second surface 100 b of the substrate 100, the surface (side surface and bottom surface) of the boundary isolation trench 120, and the surface (side surface and bottom surface) of the internal reflection pattern trench 140. The first fixed charge film 160 may be formed on the entire surface or a portion of the second surface 100 b of the substrate 100.

[0069] When the first photoelectric device 110 (e.g., photodiode 11) formed on the pixel region is an N-type, the first fixed charge film 160 may be formed as a P+ type. That is, the first fixed charge film 160 can reduce dark current by reducing electron-hole pairs (EHP) thermally generated in the second surface 100b of the substrate 100. Alternatively, the first fixed charge film 160 may be omitted.

[0070] The first fixed charge film 160 may include, for example, a metal oxide film or a metal nitride film, wherein the metal may include hafnium (Hf), aluminum (Al), zirconium (Zr), tantalum (Ta), and titanium (Ti). Furthermore, the first fixed charge film 160 may include at least one of lanthanum (La), praseodymium (Pr), cerium (Ce), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), thulium (Tm), ytterbium (Yb), lutetium (Lu), and yttrium (Y). Furthermore, the first fixed charge film 160 may be formed of a hafnium oxynitride film or an aluminum oxynitride film.

[0071] The first fixed charge film 160 is shown as a single-layer film in the figure, but may be a stacked structure combining two or more films formed of the same material or materials different from each other.

[0072] A first anti-reflection film 170 may be formed on the first fixed charge film 160. The first anti-reflection film 170 may completely fill the boundary isolation trench 120 and the internal reflection pattern trench 140. The first anti-reflection film 170 may reduce or prevent reflection of external incident light. The first anti-reflection film 170 may include a material having a different refractive index from that of the first fixed charge film 160. For example, the first anti-reflection film 170 may be formed of an insulating film such as a silicon oxide film, a silicon nitride film, a silicon oxynitride film, a resin, a combination thereof, or a stack thereof.

[0073] The double-layered structure of the first fixed charge film 160 and the first anti-reflection film 170 having different refractive indices may be used to prevent reflection. Thus, reflection of incident light on the second surface 100b of the substrate 100 may be reduced or prevented.

[0074] The material / thickness of the first anti-reflection film 170 may vary depending on the wavelength of light used in the optical process. Arrive at the appointment The silicon oxide film has a thickness from about Arrive at the appointment A silicon nitride film having a thickness of 500 Å may be stacked and used as the first anti-reflection film 170. However, exemplary embodiments are not limited to the examples given above.

[0075] The first lower planarization film 180 may be formed on the first anti-reflection film 170. For example, the first lower planarization film 180 may include at least one of a silicon oxide film-based material, a silicon nitride film-based material, a resin, and a combination thereof.

[0076] The first lower planarization film 180 may serve as a buffer film to prevent damage to the substrate 100 in a patterning process for forming a pad (not shown) in a non-pixel region.

[0077] The first lower planarization film 180 may include a silicon oxide film-based material, a silicon nitride film-based material, a resin, or a combination thereof. Arrive at the appointment A silicon oxide film having a thickness of 500 Å may be used as the first lower planarization film 180. However, exemplary embodiments are not limited to the examples given above.

[0078] An infrared filter 200 may be formed on the first lower planarization film 180. The infrared filter 200 may filter out wavelengths of incident light other than infrared light. Therefore, light passing through the infrared filter 200 is infrared light. The light passing through the infrared filter 200 may pass through the underlying structure and reach the first optoelectronic device 110. The first optoelectronic device 110 may generate current using the incident light.

[0079] The first side anti-reflection film 190 may be formed on the first lower planarization film 180. The first side anti-reflection film 190 may cover a portion of the first lower planarization film 180. The first side anti-reflection film 190 may vertically overlap the boundary isolation film 130. That is, the first side anti-reflection film 190 may be on the edge of the first sensing region S1.

[0080] The first side anti-reflection film 190 may be disposed on the side surface of the infrared filter 200. Specifically, the infrared filter 200 may cover the side surface and the upper surface of the first side anti-reflection film 190. That is, the height of the upper surface of the first side anti-reflection film 190 may be lower than the height of the upper surface of the infrared filter 200.

[0081] The first side anti-reflection film 190 can reduce or prevent incident light from being reflected or scattered from the side surfaces when passing through the infrared filter 200. That is, the first side anti-reflection film 190 can prevent photons reflected and scattered from the interface between the infrared filter 200 and the first lower planarization film 180 from moving to another sensing area. Because the first side anti-reflection film 190 operates at the interface as described above, the first side anti-reflection film 190 can cover only a portion of the side surface of the infrared filter 200.

[0082] The first side anti-reflection film 190 may include a metal. For example, the first side anti-reflection film 190 may include at least one of tungsten (W), aluminum (Al), and copper (Cu).

[0083] The first upper planarization film 210 may be formed flatly on the infrared filter 200. For example, the first upper planarization film 210 may include at least one of a silicon oxide film-based material, a silicon nitride film-based material, a resin, and a combination thereof. Although the first upper planarization film 210 is shown as a single-layer film, this is provided for convenience of explanation only and the present disclosure is not limited thereto.

[0084] Although Figure 4 By way of example, the first upper planarization film 210 and the first lower planarization film 180 are respectively provided on the upper and lower surfaces of the infrared filter 200, but exemplary embodiments are not limited thereto. For example, the planarization film may be provided only on the lower surface of the infrared filter 200, or only on the upper surface of the infrared filter 200. Alternatively, the planarization film may not be provided on both the upper and lower surfaces of the infrared filter 200.

[0085] The first microlens 220 may be formed on the first upper planarization film 210. As shown, the first microlens 220 may have an upwardly convex shape. The convex shape of the first microlens 220 may focus incident light onto the first sensing region S1.

[0086] The first microlens 220 may be formed of an organic material such as a photoresist PR. However, exemplary embodiments are not limited to the examples provided above. Therefore, the first microlens 220 may be formed using an inorganic material. Forming the first microlens 220 using an organic material may involve, for example, forming an organic material pattern on the first upper planarization film 210 and performing an annealing process. The annealing process may cause the organic material pattern to change into the shape of the first microlens 220.

[0087] The first protective film 230 can be formed with a certain thickness along the surface of the first microlens 220. The first protective film 230 can be an inorganic oxide film. For example, a silicon oxide (SiO2) film, a titanium oxide (TiO2) film, a zirconium oxide (ZrO2) film, a hafnium oxide (HfO2) film, a stack thereof, and a combination thereof can be used. Specifically, for the first protective film 230, a low temperature oxide (LTO) which is a type of silicon oxide film can be used. By using LTO, damage to the lower film can be reduced because LTO is manufactured at low temperatures (about 100°C-200°C). In addition, LTO is amorphous and thus has a smooth surface, which can minimize the reflection / refraction / scattering of incident light.

[0088] Formed from an organic material, the first microlens 220 may be susceptible to external impact. Therefore, the first protective film 230 can protect the first microlens 220 from external impact. In addition, there may be a certain space between adjacent microlenses, and the first protective film 230 can fill such space.

[0089] The incident light collecting capability can be improved by filling the space between the adjacent microlenses and the first microlens 220. Filling the space as described above can reduce the reflection / refraction / scattering of the incident light reaching the space between the adjacent microlenses and the first microlens 220.

[0090] Reference Figure 5 , the image sensor according to some exemplary embodiments may utilize the infrared filter 200 to convert infrared light into electric current. In principle, infrared light has a longer wavelength than visible light and thus has a longer penetration depth into silicon. Therefore, the length of the substrate of an image sensor using other RGB filters may be significantly shorter than that of the infrared filter. Therefore, the quantum efficiency (QE) of the first sensing area S1 according to the infrared filter may be reduced. If the length of the substrate 100 is increased to prevent such QE loss, the sensing area for sensing visible light having other short wavelengths may have an increased risk of image blooming.

[0091] Therefore, in the image sensor according to some exemplary embodiments, the length of the substrate 100 used with the infrared sensor is the same as the length of the substrate used with the visible light filter, such as the RGB filter, and the incident infrared light 240 collides with the boundary isolation film 130 and the internal reflection pattern film 150 and is reflected so as to be concentrated on the first photoelectric device 110. That is, unlike other sensing regions, the internal reflection pattern film 150 can effectively shorten the silicon penetration depth only in the first sensing region S1 where the infrared filter 200 is placed.

[0092] In the following, reference will be made to Figure 6An image sensor according to some exemplary embodiments is described. In the following description, for the sake of brevity, descriptions overlapping with the exemplary embodiments already provided above will not be described or will be described as concisely as possible.

[0093] Figure 6 is a layout diagram provided to illustrate an image sensor according to some example embodiments. Figure 6 , an image sensor according to some example embodiments may include an internal reflection pattern film 151 .

[0094] The internal reflection pattern film 151 can have a planar shape that does not contact the boundary isolation film 130. The internal reflection pattern film 151 can isolate the first sensing area S1 into a rectangular area defined by the internal reflection pattern film 151 and its surrounding area. As a result, when incident infrared light entering these two areas strikes the internal reflection pattern film 151, or strikes both the internal reflection pattern film 151 and the boundary isolation film 130 and is reflected, the effective silicon penetration depth can be shortened. Specifically, due to the small cross-shaped pattern formed on the edge of the rectangle, reflection from adjacent spaces can be further enhanced, and QE loss can be significantly reduced.

[0095] In the following, reference will be made to Figure 7 An image sensor according to some exemplary embodiments is described. In the following description, for the sake of brevity, descriptions overlapping with the exemplary embodiments already provided above will not be described or will be described as concisely as possible.

[0096] Figure 7 is a layout diagram provided to illustrate an image sensor according to some example embodiments. Figure 7 , an image sensor according to some example embodiments may include an internal reflection pattern film 152 .

[0097] The internal reflection pattern film 152 can have a planar shape that does not contact the boundary isolation film 130. The internal reflection pattern film 152 can isolate the first sensing area S1 into a triangular area defined by the internal reflection pattern film 152 and its surrounding area. As a result, when incident infrared light entering these two areas strikes the internal reflection pattern film 152 or strikes both the internal reflection pattern film 152 and the boundary isolation film 130 and is reflected, the effective silicon penetration depth can be shortened. Specifically, due to the small cross-shaped pattern formed on the edge of the triangle, reflection from the surrounding space can be further enhanced, and QE loss can be significantly reduced.

[0098] In the following, reference will be made to Figure 8 An image sensor according to some exemplary embodiments is described. In the following description, for the sake of brevity, descriptions overlapping with the exemplary embodiments already provided above will not be described or will be described as concisely as possible.

[0099] Figure 8 is a layout diagram provided to illustrate an image sensor according to some example embodiments. Figure 8 , an image sensor according to some example embodiments may include an internal reflection pattern film 153 .

[0100] The internal reflection pattern film 153 can have a planar shape that does not contact the boundary isolation film 130. The internal reflection pattern film 153 can isolate the first sensing region S1 into a rectangular region defined by the internal reflection pattern film 153 and its surrounding area. As a result, when incident infrared light entering these two regions strikes the internal reflection pattern film 153, or strikes both the internal reflection pattern film 153 and the boundary isolation film 130 and is reflected, the effective silicon penetration depth can be shortened. Specifically, because the edges of the rectangle are not formed with additional patterns, the area within the sensing region where incident light penetrates is increased, thereby improving image sensing efficiency.

[0101] As above Figures 6 to 8 As illustrated in the embodiment of FIG. 1 , the shape of the internal reflection pattern film 150 may be freely modified according to the purpose and characteristics of the image sensor.

[0102] In the following, reference will be made to Figure 9 An image sensor according to some exemplary embodiments is described. In the following description, for the sake of brevity, descriptions overlapping with the exemplary embodiments already provided above will not be described or will be described as concisely as possible.

[0103] Figure 9 1 is a cross-sectional view provided to illustrate an image sensor according to some example embodiments. Figure 9 , the image sensor according to some example embodiments may additionally include an insulating structure 300 .

[0104] The insulating structure 300 may be formed on the first surface 100a of the substrate 100. That is, the insulating structure 300 may be formed on the front side of the substrate 100. The insulating structure 300 may include an insulating film 320, a gate structure 310, and a wire structure 330.

[0105] For example, the insulating film 320 may include at least one of a silicon oxide film, a silicon nitride film, a silicon oxynitride film, a low-k dielectric material, and a combination thereof. The insulating film 320 may cover the gate structure 310 and the line structure 330 to be described below and surround the gate structure 310 and the line structure 330. In other words, the insulating film 320 may be used to insulate the gate structure 310 and the line structure 330 from each other.

[0106] The gate structure 310 may be on the first surface 100a of the substrate 100. Figure 2As shown in , the gate structure 310 may be, for example, a gate of the charge transfer transistor 15 , a gate of the reset transistor 18 , a gate of the select transistor 19 , a gate of the drive transistor 17 , or the like.

[0107] Although Figure 9 The gate structure 310 is shown to be formed on the first surface 100 a of the substrate 100 , but example embodiments are not limited to any specific example. Therefore, the gate structure 310 may also be recessed or buried in the substrate 100 .

[0108] For example, the wire structure 330 may include aluminum (Al), copper (Cu), tungsten (W), cobalt (Co), ruthenium (Ru), etc., but is not limited thereto.

[0109] The wire structure 330 may be formed in the first sensing region S1 and include a plurality of wires stacked sequentially. Figure 9 A wire structure 330 having three sequentially stacked layers is shown, but this is provided for illustrative convenience only, and example embodiments are not limited to any specific example.

[0110] When the wire structure 330 is on the first surface 100a of the substrate 100, the area where incident light penetrates the second surface 100b can be increased. In addition, when the wire structure 330 is placed on the first surface 100a of the substrate 100, incident light hits the wire structure 330, is reflected, and is directed back to the first optoelectronic device 110. Therefore, the efficiency of the image sensor can be maximized.

[0111] In the following, reference will be made to Figure 10 An image sensor according to some exemplary embodiments is described. In the following description, for the sake of brevity, descriptions overlapping with the exemplary embodiments already provided above will not be described or will be described as concisely as possible.

[0112] Figure 10 1 is a cross-sectional view provided to illustrate an image sensor according to some example embodiments. Figure 10 , an image sensor according to some example embodiments includes a boundary isolation trench 121 and a boundary isolation film 131 .

[0113] The boundary isolation trench 121 may connect the first surface 100a and the second surface 100b of the substrate 100. That is, the boundary isolation trench 121 may completely penetrate the substrate 100. The boundary isolation trench 120 may completely surround the boundary of the first sensing region S1 in both vertical and horizontal cross-sections.

[0114] The boundary isolation trench 121 may be formed using a frontside deep trench isolation (FDTI) process, which will be explained in detail below.

[0115] The boundary isolation film 131 may completely fill the boundary isolation trench 121. Therefore, the boundary isolation film 131 may be exposed from the first surface 100a and the second surface 100b of the substrate 100. That is, the boundary isolation film 131 may include a first surface that is the same as the first surface 100a of the substrate 100 and a second surface that is the same as the second surface 100b of the substrate 100, for example, coplanar with both surfaces of the substrate 100.

[0116] The boundary isolation film 131 may extend longitudinally in the vertical direction compared to the internal reflection pattern film 150. Since the internal reflection pattern film 150 overlaps the first photoelectric device 110 in the vertical direction, it may not penetrate the substrate 100 like the boundary isolation film 131. However, exemplary embodiments are not limited to the examples given above.

[0117] Although the boundary isolation trench 121 and the boundary isolation film 131 are shown to have a constant width in the figure, they are not limited thereto. The boundary isolation trench 121 and the boundary isolation film 131 can be formed into a tapered shape. That is, the width of the boundary isolation trench 121 can gradually decrease in the direction from the second surface 100b toward the first surface 100a.

[0118] The boundary isolation film 131 may include a conductive material such as polysilicon, metal, etc. In this case, the boundary isolation film 131 may ensure a charge fixing function at the interface with the substrate 100 by applying a negative voltage. Alternatively, a charge fixing region may be formed on the interface by a doping process.

[0119] That is, in the image sensor according to some example embodiments, if the internal reflection pattern film 150 does not overlap the first photoelectric device 110 in a vertical direction, the internal reflection pattern film 150 may completely penetrate the substrate 100 like the boundary isolation film 131 .

[0120] In the following, reference will be made to Figures 11 to 13 An image sensor according to some exemplary embodiments is described. In the following description, for the sake of brevity, descriptions overlapping with the exemplary embodiments already provided above will not be described or will be described as concisely as possible.

[0121] Figure 11 is a layout diagram provided to illustrate an image sensor according to some example embodiments, Figure 12 is Figure 11 A cross-sectional view taken on line BB'. Figure 13 is provided to illustrate that when light is incident on Figure 12 A conceptual diagram of the operation on the image sensor shown in FIG.

[0122] Reference Figures 11 to 13In addition to the first sensing area S1 , the image sensor according to some example embodiments further includes a second sensing area S2 , a third sensing area S3 , and a fourth sensing area S4 .

[0123] The first sensing area S1 to the fourth sensing area S4 may respectively have a rectangular horizontal cross-section. The adjacent sensing areas of the first sensing area S1 to the fourth sensing area S4 may again form a larger rectangular horizontal cross-section. Specifically, the second sensing area S2 and the third sensing area S3 may be placed on different sides of the first sensing area S1, respectively, and the fourth sensing area S4 may be placed in a diagonal direction. In other words, the first sensing area S1 and the second sensing area S2 may respectively contact the third sensing area S3 and the fourth sensing area S4 along the second direction, and the first sensing area S1 and the third sensing area S3 may respectively contact the third sensing area S3 and the fourth sensing area S4 along the first direction that intersects the second direction. The first direction and the second direction both intersect a third direction, which is the direction in which light is incident on the image sensor.

[0124] The first to fourth sensing regions S1 to S4 may be separated by a boundary isolation film 130. That is, the boundary isolation film 130 may be formed on the boundary of each of the first to fourth sensing regions S1 to S4. Therefore, the boundary isolation film 130 may have Figure 11 The largest rectangular outline or cross-shaped horizontal section.

[0125] The second to fourth sensing regions S2 to S4 may be sensing regions in which RGB filters are placed, respectively. That is, a blue filter may be placed in the second sensing region S2, a green filter may be placed in the third sensing region S3, and a red filter may be placed in the fourth sensing region S4. However, this is merely one example embodiment. Therefore, as long as the infrared filter 200 is placed in the first sensing region S1 and the RGB filters are placed in other regions, the position of each color filter is not limited.

[0126] The internal reflection pattern film 150 may exist only in the first sensing region S1. The internal reflection pattern film 150 may reduce the effective silicon penetration depth only in the first sensing region S1 where the infrared filter 200 exists, thereby minimizing QE loss.

[0127] Reference Figure 12 The second sensing area S2 may include a second photoelectric device 1110, a second fixed charge film 1160, a second anti-reflection film 1170, a second lower planarization film 1180, a second side anti-reflection film 1190, a blue filter 1200, a second upper planarization film 1210, a second microlens 1220 and a second protective film 2230.

[0128] The second photoelectric device 1110 may be within the substrate 100 in the second sensing region S2. The second fixed charge film 1160 is connected to the first fixed charge film 160 and reduces thermally generated EHP in the second surface 100b of the substrate 100, thereby reducing dark current.

[0129] The second anti-reflection film 1170 is connected to the first anti-reflection film 170 and has a different refractive index from the second fixed charge film 1160, so that the second anti-reflection film 1170 can reduce or prevent reflection of external incident light. The second lower planarization film 1180 can be connected to the first lower planarization film 180 to prevent the substrate 100 from being damaged during the patterning process.

[0130] The blue filter 1200 may filter out wavelengths other than the blue region of visible light from the incident light. Light passing through the blue filter 1200 may pass through the lower structure and reach the second optoelectronic device 1110.

[0131] The second side anti-reflection film 1190 may be connected to a portion of the first side anti-reflection film 190. The second side anti-reflection film 1190 may prevent incident light passing through the blue filter 1200 from being reflected or scattered to a side surface.

[0132] The second upper planarization film 1210 may be connected to the first upper planarization film 210 to flatten the height variation caused by the lower structure. In one example, the planarization film may be present only on the lower surface of the blue filter 1200, or only on the upper surface of the blue filter 1200. Alternatively, the planarization film may not be present on both the upper and lower surfaces of the blue filter 1200.

[0133] The second microlens 1220 may be formed on the second upper planarization film 1210. As shown, the second microlens 1220 may have an upwardly convex shape. The second protective film 2230 may be formed along the surface of the second microlens 1220 to a certain thickness. Together with the first protective film 230, the second protective film 2230 may fill the gap between the first microlens 220 and the second microlens 1220. As a result, the incident light collecting capability may be improved.

[0134] Reference Figure 13 Due to the internal reflection pattern film 150, the first sensing region S1 has a shortened effective silicon penetration depth, so that the incident infrared light 240 can reach the first optoelectronic device 110. In the second sensing region S2, the incident light 1240 passing through the blue filter 1200 can reach the second optoelectronic device 1110 with a normal, e.g., non-shortened, length.

[0135] The image sensor according to some example embodiments can maximize photoelectric efficiency with the substrate 100 having the same depth with respect to lights of different wavelengths and effective silicon penetration depths.

[0136] In the following, reference will be made to Figure 14 An image sensor according to some exemplary embodiments is described. In the following description, for the sake of brevity, descriptions overlapping with the exemplary embodiments already provided above will not be described or will be described as concisely as possible.

[0137] Figure 14 is a layout diagram provided to illustrate an image sensor according to some example embodiments. Figure 14 In the image sensor according to some example embodiments, the infrared filter 200 may perform the roles of both an infrared filter and a red filter in the first sensing area S1.

[0138] In an RGB filter without infrared filter 200, the green filter may be the most needed filter. Therefore, a green filter next to the blue filter and a green filter next to the red filter (red / IR) may be provided in the third sensing area S3 and the second sensing area S2, respectively. Because red light and infrared light belong to adjacent wavelength regions, a red / IR filter for simultaneously transmitting light in these two wavelength regions may be provided in the first sensing area S1. As a result, the area of ​​the green filter region, which is the most needed region, is increased, and, as with the red filter and infrared filter, QE loss can be reduced or minimized.

[0139] In the following, reference will be made to Figure 15 and 16 An image sensor according to some exemplary embodiments is described. In the following description, for the sake of brevity, descriptions overlapping with the exemplary embodiments already provided above will not be described or will be described as concisely as possible.

[0140] Figure 15 1 is a layout diagram provided to illustrate an image sensor according to some example embodiments. Figure 16 is Figure 15 A cross-sectional view taken on line CC'.

[0141] Reference Figure 15 and 16 In an image sensor according to some example embodiments, the internal reflection pattern film 150 may be formed in the first sensing region S1, and the first to third sub-boundary isolation films 1150, 1151, and 1152 may be formed in the second to fourth sensing regions S2, S4, respectively. Specifically, the first sub-boundary isolation film 1150 may be formed in the second sensing region S2, the second sub-boundary isolation film 1151 may be formed in the third sensing region S3, and the third sub-boundary isolation film 1152 may be formed in the fourth sensing region S4.

[0142] The first to third sub-boundary isolation films 1150, 1151, and 1152 may contact the boundary isolation film 130. The first to third sub-boundary isolation films 1150, 1151, and 1152 may isolate the second to fourth sensing regions S2 to S4 in a cross shape. However, exemplary embodiments are not limited to the above examples, and according to some exemplary embodiments, the region may be vertically divided in half.

[0143] The first to third sub-boundary isolation films 1150, 1151, and 1152 can form an autofocus function for the RGB color filter. That is, in order to quickly capture the focus of a pixel by utilizing the distance between two images on the right and left sides, the first to third sub-boundary isolation films 1150, 1151, and 1152 can separate a single pixel, i.e., a single sensing area, into multiple pixels.

[0144] Reference Figure 16 The sub-boundary isolation trench 1140 may be formed by etching into the substrate 100 in a depth direction. The sub-boundary isolation trench 1140 may be formed on the second surface 100b of the substrate 100 and may extend in a direction toward the first surface 100a. The sub-boundary isolation trench 1140 may not reach the first surface 100a of the substrate 100.

[0145] In one example, the depth of the sub-boundary isolation trench 1140 may be less than the depth of the second optoelectronic device 1110. This is to prevent damage to the second optoelectronic device 1110 during the formation of the sub-boundary isolation trench 1140. The depth of the sub-boundary isolation trench 1140 may be deeper or shallower than the depth of the internal reflection pattern trench 140.

[0146] The first sub-boundary isolation film 1150 may be filled with a second fixed charge film 1160 and a second anti-reflection film 1170. Likewise, the second sub-boundary isolation film 1151 and the third sub-boundary isolation film 1152 may be filled with a stacked structure of a fixed charge film and an anti-reflection film.

[0147] In the following, reference will be made to Figure 17 An image sensor according to some exemplary embodiments is described. In the following description, for the sake of brevity, descriptions overlapping with the exemplary embodiments already provided above will not be described or will be described as concisely as possible.

[0148] Figure 17 is a layout diagram provided to illustrate an image sensor according to some example embodiments. Figure 17The image sensor according to some example embodiments may include the inner reflection pattern film 151 in the first sensing region S1 and include first to third sub-boundary isolation films 1150 , 1151 , 1152 in the second to fourth sensing regions S2 to S4 .

[0149] The first to third sub-boundary isolation films 1150, 1151, and 1152 may be in contact with the boundary isolation film 130 to separate the second to fourth sensing regions S2 to S4 into a plurality of regions. The internal reflection pattern film 151 may not be in contact with the boundary isolation film 130 within the substrate 100 and may not separate the first sensing region S1. (Of course, the anti-reflection film and the fixed charge film may be connected to each other above the substrate 100, but the term "not in contact" as used herein means that each of the grooves does not contact within the substrate 100.) The internal reflection pattern film 151 may also be in contact with the boundary isolation film 130 (within the substrate 100) and may separate the first sensing region S1.

[0150] This contact is due to the different functions of the first to third sub-boundary isolation films 1150, 1151, and 1152 and the internal reflection pattern film 151. The first to third sub-boundary isolation films 1150, 1151, and 1152 can separate the sensing area for autofocus purposes, but the internal reflection pattern film 151 can only reflect incident infrared light, thereby minimizing QE loss. Therefore, the degree of freedom in the shape of the internal reflection pattern film 151 is greater than the degree of freedom in the shape of the first to third sub-boundary isolation films 1150, 1151, and 1152.

[0151] In the following, reference will be made to Figure 12 and 18 24 illustrate methods of manufacturing an image sensor according to some exemplary embodiments. In the following description, for the sake of brevity, descriptions overlapping with the exemplary embodiments already provided above will not be described or will be described as concisely as possible. Figures 18 to 24 is a view showing an intermediate stage of manufacturing, provided to illustrate a method of manufacturing an image sensor according to some example embodiments.

[0152] First refer to Figure 18 A substrate 100 is provided. The substrate 100 may include a first surface 100a and a second surface 100b opposite to each other. The first surface 100a of the substrate 100 may be a front side, and the second surface 100b of the substrate 100 may be a back side. The substrate 100 may include a first optoelectronic device 110 and a second optoelectronic device 1110 therein. The first optoelectronic device 110 may be placed in a first sensing region S1 of the substrate 100, and the second optoelectronic device 1110 may be placed in a second sensing region S2.

[0153] Next, refer to Figure 19 The insulating structure 300 is formed on the first surface 100a. The insulating structure 300 may be formed on the first surface 100a of the substrate 100. That is, the insulating structure 300 may be formed on the front side of the substrate 100. The insulating structure 300 may include an insulating film 320, a gate structure 310, and a line structure 330.

[0154] The insulating film 320 may cover the gate structure 310 and the line structure 330 to be described below and surround the gate structure 310 and the line structure 330. That is, the insulating film 320 may be used to insulate the gate structure 310 from the line structure 330.

[0155] The insulating structure 300 may be on the first surface 100a of the substrate 100. Figure 2 As shown in , the gate structure 310 may be, for example, a gate of the charge transfer transistor 15 , a gate of the reset transistor 18 , a gate of the select transistor 19 , a gate of the drive transistor 17 , etc. The line structure 330 may be formed in the first region S1 and include a plurality of lines stacked sequentially.

[0156] Next, refer to Figure 20 , the substrate 100 is flipped or inverted so that the second surface 100b faces upward. Therefore, relative to the current state of the substrate 100, the first surface 100a can be the lower surface and the second surface 100b can be the upper surface. Therefore, the insulating structure 300 can be located below the substrate 100.

[0157] Next, refer to Figure 21 , the first fixed charge film 160 and the second fixed charge film 1160 may be formed on the boundary isolation trench 120 and the internal reflection pattern trench 140. The first fixed charge film 160 may be formed along the second surface 100b of the substrate 100 and the surfaces of the boundary isolation trench 120 and the internal reflection pattern trench 140. The first fixed charge film 160 may only fill a portion of the boundary isolation trench 120 and the internal reflection pattern trench 140. In one example, the internal reflection pattern film 150 is formed in the first sensing region S1, but no film is formed in the sensing region formed in the second sensing region S2.

[0158] Next, refer to Figure 22 , a first anti-reflection film 170 and a second anti-reflection film 1170 are formed. The first anti-reflection film 170 and the second anti-reflection film 1170 may be formed on the first fixed charge film 160 and the second fixed charge film 1160, respectively. The first anti-reflection film 170 and the second anti-reflection film 1170 may reduce or prevent reflection of external incident light.

[0159] Next, the first and second lower planarization films 180 and 1180 are formed. The first and second lower planarization films 180 and 1180 may include, for example, at least one of a silicon oxide film-based material, a silicon nitride film-based material, a resin, and a combination thereof.

[0160] Next, refer to Figure 23 , an infrared filter 200, a blue filter 1200, a first side anti-reflection film 190, and a second side anti-reflection film 1190 are formed. The infrared filter 200 can filter out wavelengths other than infrared light in the incident light. The blue filter 1200 can filter out wavelengths other than the blue region of visible light in the incident light.

[0161] The first and second side anti-reflection films 190 and 1190 may cover a portion of the infrared filter 200 and the blue filter 1200, respectively, from their side surfaces. The first and second side anti-reflection films 190 and 1190 may include, for example, tungsten (W).

[0162] Next, refer to Figure 24 , a first upper planarizing film 210 and a second upper planarizing film 1210 are formed. The first upper planarizing film 210 may be formed on the infrared filter 200. The second upper planarizing film 1210 may be formed flatly on the blue filter 1200. The first upper planarizing film 210 and the second upper planarizing film 1210 may include, for example, at least one of a silicon oxide film-based material, a silicon nitride film-based material, a resin, and a combination thereof.

[0163] Next, refer to Figure 12 , the first micro lens 220 and the second micro lens 1220 are formed. In the example, although Figure 12 The insulation structure 300 is not specifically shown, but it is assumed here that Figure 12 An insulating structure 300 is provided.

[0164] The first microlens 220 and the second microlens 1220 may be formed of an organic material such as a photoresist PR. Forming the first microlens 220 and the second microlens 1220 with an organic material may involve, for example, forming an organic material pattern on the first and second upper planarizing films 210 and 1210 and performing an annealing process to form the first microlens 220 and the second microlens 1220. The annealing process may cause the organic material pattern to change into the form of the first microlens 220 and the second microlens 1220.

[0165] Next, a first protective film 230 and a second protective film 2230 may be respectively formed on the first microlens 220 and the second microlens 1220. In this case, the first protective film 230 and the second protective film 2230 may be inorganic oxide films.

[0166] In the following, reference will be made to Figure 18 and 25 28 illustrate methods of manufacturing an image sensor according to some exemplary embodiments. In the following description, for the sake of brevity, descriptions overlapping with the exemplary embodiments already provided above will not be described or will be described as concisely as possible.

[0167] Figures 25 to 28 1 is a diagram showing stages in a method of manufacturing an image sensor according to some exemplary embodiments. Figure 18 The same description may be given for the implementation methods of FIG.

[0168] Next, refer to Figure 25 , a boundary isolation trench 121 is formed. The boundary isolation trench 121 may be formed on the first surface 100 a using an FDTI process. The boundary isolation trench 121 may penetrate the substrate 100 .

[0169] The boundary isolation film 131 may completely fill the boundary isolation trench 121. Therefore, the boundary isolation film 131 may be exposed from the first surface 100a and the second surface 100b of the substrate 100. That is, the boundary isolation film 131 may include a first surface that is the same as the first surface 100a of the substrate 100 and a second surface that is the same as the second surface 100b of the substrate 100.

[0170] The boundary isolation film 131 may include polysilicon or metal. The boundary isolation film 131 may allow charges to be fixed on the interface between the substrate 100 and the boundary isolation film 131 by a process of applying a negative voltage.

[0171] Alternatively, the region where charges are fixed may be formed by performing a doping process on the sidewalls of the boundary isolation trench 121 before forming the boundary isolation film 131. By the above method, the substrate 100 and the boundary isolation film 131 may have different conductivity types from each other, which may reduce thermally generated EHP and reduce dark current.

[0172] Next, refer to Figure 26 The insulating structure 300 is formed on the first surface 100a. The insulating structure 300 may be formed on the first surface 100a of the substrate 100 and the boundary isolation film 131. That is, the insulating structure 300 may be formed on the front side of the substrate 100. The insulating structure 300 may include an insulating film 320, a gate structure 310, and a line structure 330.

[0173] Next, refer to Figure 27 , substrate 100 is inverted so that second surface 100b faces upward. Therefore, relative to the current state of substrate 100, first surface 100a may be the lower surface, and second surface 100b may be the upper surface. Therefore, insulating structure 300 may be located below substrate 100 in the image sensor.

[0174] Next, refer to Figure 28 , the first fixed charge film 160 is formed on the second surface 100 b of the second sensing region S2 and the surface of the inner reflection pattern groove 140 .

[0175] Next, refer to Figure 10 and 22 At 24, the upper structure is further formed. Figure 10 is a view showing that the first sensing region S1 includes a boundary isolation film 131, Figures 22 to 24 1 is a view showing that the upper structure is uniformly formed except that a boundary isolation film 130 is included instead of the boundary isolation film 131 .

[0176] Therefore, in the first sensing area S1, the first anti-reflection film 170, the first lower planarization film 180, the infrared filter 200, the first side anti-reflection film 190, the first upper planarization film 210, the first microlens 220 and the first protection film 230 can be formed on the first fixed charge film 160.

[0177] Similarly, in the second sensing area S2, a second anti-reflection film 1170, a second lower planarization film 1180, a blue filter 1200, a second side anti-reflection film 1190, a second upper planarization film 1210, a second microlens 1220 and a second protective film 2230 can be formed on the second fixed charge film 1160.

[0178] In summary and review, one or more embodiments provide image sensors having improved operating characteristics and methods of manufacturing the same.

[0179] Example embodiments have been disclosed herein, and although specific terms are employed, they are used and to be interpreted in a generic and descriptive sense only and not for purposes of limitation. In some cases, as will be apparent to one of ordinary skill in the art upon filing of this application, features, characteristics, and / or elements described in conjunction with a particular embodiment may be used alone or in combination with features, characteristics, and / or elements described in conjunction with another embodiment, unless expressly indicated otherwise. Accordingly, those skilled in the art will understand that various changes in form and details may be made without departing from the spirit and scope of the invention as set forth in the appended claims.

Claims

1. An image sensor, comprising: a substrate comprising a first sensing region containing an optoelectronic device therein; a boundary isolation film separating the first sensing regions; an internal reflection pattern film within the substrate in the first sensing area; an infrared filter on the substrate, wherein infrared light transmitted through the infrared filter is reflected between the inner reflection pattern film and the boundary isolation film by a surface of the inner reflection pattern film facing the boundary isolation film to be incident on the optoelectronic device; as well as a microlens on the infrared filter, wherein the internal reflection pattern film includes a fixed charge film filling the internal reflection pattern groove extending from the first surface of the substrate and an anti-reflection film on the fixed charge film, The boundary isolation film includes the fixed charge film filling a boundary isolation trench extending from the first surface of the substrate and the anti-reflection film on the fixed charge film.

2. The image sensor according to claim 1, wherein: The substrate includes a first surface and a second surface opposite to each other, and The boundary isolation film penetrates the substrate and is exposed from the first surface and the second surface, respectively.

3. The image sensor according to claim 2, wherein: The inner reflection pattern film is exposed from the second surface and is not exposed from the first surface. 4 . The image sensor of claim 1 , wherein the boundary isolation film and the internal reflection pattern film comprise the same first material. 5 . The image sensor according to claim 4 , wherein the first material is at least one of a silicon oxide film, a silicon nitride film, and a silicon oxynitride film. The image sensor according to claim 1 , wherein the inner reflection pattern film is spaced apart from the boundary isolation film. 7 . The image sensor according to claim 1 , further comprising an anti-reflection film formed on a side surface of the infrared filter. 8 . The image sensor according to claim 7 , wherein the anti-reflection film and the boundary isolation film overlap each other. 9 . The image sensor according to claim 1 , further comprising a planarization film under the microlens. 10 . The image sensor according to claim 9 , wherein the planarization film is between the microlens and the infrared filter and / or between the infrared filter and the substrate.

11. An image sensor comprising: a substrate comprising a first sensing region and a second sensing region, the first sensing region and the second sensing region each containing an optoelectronic device therein; a boundary isolation film defining a boundary between the first sensing region and the second sensing region; an internal reflection pattern film within the substrate in the second sensing area; a first optical filter on the first sensing region of the substrate, wherein light transmitted by the first optical filter is directly incident on the optoelectronic device in the first sensing region; a second optical filter on the second sensing area of ​​the substrate, wherein the second optical filter is different from the first optical filter, wherein light transmitted by the second optical filter is reflected between the inner reflection pattern film and the boundary isolation film by a surface of the inner reflection pattern film facing the boundary isolation film before being incident on the optoelectronic device in the second sensing area; a first microlens on the first optical filter; as well as a second microlens on the second optical filter, wherein the internal reflection pattern film includes a fixed charge film filling the internal reflection pattern groove extending from the first surface of the substrate and an anti-reflection film on the fixed charge film, The boundary isolation film includes the fixed charge film filling a boundary isolation trench extending from the first surface of the substrate and the anti-reflection film on the fixed charge film.

12. The image sensor according to claim 11, wherein the second filter is an infrared filter. 13 . The image sensor of claim 12 , wherein the first filter is at least one of a red filter, a green filter, and a blue filter. The image sensor according to claim 11 , wherein the second filter transmits both red light and infrared light.

15. The image sensor according to claim 11, wherein: The substrate includes a third sensing region and a fourth sensing region, The first sensing area and the second sensing area are in contact with the third sensing area and the fourth sensing area respectively in a first direction, The first sensing area and the third sensing area, and the second sensing area and the fourth sensing area are in contact with each other in a second direction crossing the first direction, respectively; and The image sensor further includes a third filter and a fourth filter on the third sensing area and the fourth sensing area, respectively.

16. The image sensor according to claim 15, wherein: The first filter, the third filter, and the fourth filter are any one of a red filter, a blue filter, and a green filter, and The second filter is an infrared filter.

17. The image sensor according to claim 15, wherein: The third filter is a blue filter, The first filter and the fourth filter are green filters, and The second filter is an infrared / red filter. 18 . The image sensor according to claim 11 , further comprising a sub-boundary isolation film to separate the first sensing region into at least two sub-regions. 19 . The image sensor of claim 18 , wherein a planar shape of the inner reflection pattern film is different from a planar shape of the sub-boundary isolation film.

20. An image sensor comprising: a substrate comprising a first surface and a second surface opposite to each other and a first sensing region containing a photoelectric device therein; an insulating structure on the first surface and comprising a wire structure; a boundary isolation film on the second surface and extending into the substrate and defining the first sensing region; an internal reflection pattern film, which is within the first sensing area and extends into the substrate, and comprises the same material as the boundary isolation film; an optical filter on the second surface, which transmits only light of a certain wavelength, wherein the light of the certain wavelength is reflected between the inner reflection pattern film and the boundary isolation film by a surface of the inner reflection pattern film facing the boundary isolation film, thereby increasing an area where the light of the certain wavelength penetrates the first sensing area; as well as a microlens on the filter, wherein the internal reflection pattern film includes a fixed charge film filling the internal reflection pattern groove extending from the second surface of the substrate and an anti-reflection film on the fixed charge film, The boundary isolation film includes the fixed charge film filling a boundary isolation trench extending from the second surface of the substrate and the anti-reflection film on the fixed charge film.

Images