Radiation detector, radiation imaging device, and manufacturing method

Abstract

The present invention provides a radiation detector, a radiation imaging device, and a manufacturing method. The radiation detector comprises: a substrate, in which a plurality of pixels for accumulating charges generated from light converted from radiation are formed in a pixel region of a flexible substrate; a conversion layer, which is provided on the surface of the substrate on which the pixel region is provided, and converts the radiation into light; and a reinforcing substrate, which is provided on a surface of the conversion layer that is opposite to the surface on the substrate side, and contains a material having a yield point and has a higher rigidity than the substrate.

Description

Technical Field

[0001] The present disclosure relates to a radiation detector, a radiation imaging device, and a manufacturing method. Background Art

[0002] Conventionally, there are known radiographic imaging devices that perform radiographic imaging for the purpose of medical diagnosis. Such radiographic imaging devices use a radiation detector for detecting radiation that has passed through a subject and generating a radiographic image (for example, see Japanese Patent Application Publication No. 2009-133837 and Japanese Patent Application Publication No. 2012-177624).

[0003] As such a radiation detector, there is a radiation detector having a conversion layer such as a scintillator that converts radiation into light, and a substrate having a plurality of pixels in a pixel region of the substrate, wherein the plurality of pixels accumulate charges generated in accordance with the light converted by the conversion layer. As a substrate of such a substrate of a radiation detector, a substrate using a flexible substrate is known. By using a flexible substrate, for example, a radiation imaging device (radiation detector) can be made lighter, and there is also a case where imaging of a subject becomes easier.

[0004] However, the radiation detector may be handled as a single unit in the middle of the manufacturing process of the radiation imaging device, etc. When the radiation detector is handled as a single unit, the conversion layer may be peeled off from the substrate due to the influence of the bending of the flexible substrate, etc.

[0005] However, in the technology described in Japanese Patent Publication No. 2009-133837, an electromagnetic shielding layer covering the conversion layer is provided on the surface of the conversion layer that is opposite to the surface on the substrate side. In addition, in the technology described in Japanese Patent Publication No. 2012-177624, a support body that supports the conversion layer is provided on the surface of the conversion layer that is opposite to the surface on the substrate side. However, in the technologies described in Japanese Patent Publication No. 2009-133837 and Japanese Patent Publication No. 2012-177624, the case where the radiation detector is handled as a single body is not considered. Therefore, in the case where the electromagnetic shielding layer in Japanese Patent Publication No. 2009-133837 and the support body in Japanese Patent Publication No. 2012-177624, when the radiation detector is handled as a single body, it is possible that it is impossible to suppress the conversion layer from peeling off from the substrate. Summary of the invention

[0006] Problems to be solved by the invention

[0007] The present disclosure provides a radiation detector, a radiation imaging device, and a manufacturing method, which can suppress the destruction of a conversion layer in a radiation detector unit, compared with the case where the material of a reinforcing substrate provided on a surface of the conversion layer opposite to the substrate side surface is not considered.

[0008] Means for solving problems

[0009] The first form of the present disclosure is a radiation detector comprising: a substrate having a plurality of pixels in a pixel area of ​​a flexible substrate for accumulating electric charges generated based on light converted from radiation; a conversion layer provided on a surface of the substrate having the pixel area, for converting radiation into light; and an enhancement substrate provided on a surface of the conversion layer opposite to a surface on the substrate side, comprising a material having a yield point and having higher rigidity than the substrate.

[0010] A radiation detector according to a second aspect of the present disclosure is the radiation detector according to the first aspect, wherein the reinforcing substrate is provided in a region larger than a region where the conversion layer is provided.

[0011] The third form of the radiation detector disclosed in the present invention is a radiation detector of the first form or the second form, in which the substrate has a connection area connected to the other end of a flexible wiring connected to a circuit unit that reads out charges accumulated in the plurality of pixels in an area peripheral to a surface on which a plurality of pixels are formed, and a reinforcing substrate is provided in an area covering at least a portion of the connection area and a conversion layer.

[0012] A radiation detector according to a fourth aspect of the present disclosure is the radiation detector according to any one of the first to third aspects, wherein a reinforcing member having higher rigidity than the base material is further provided on a surface of the substrate facing a surface on which a plurality of pixels are formed.

[0013] A radiation detector according to a fifth aspect of the present disclosure is the radiation detector according to any one of the first to fourth aspects, further comprising a buffer layer provided between the substrate and the conversion layer.

[0014] A radiation detector according to a sixth aspect of the present disclosure is the radiation detector according to any one of the first to fifth aspects, wherein the bending elastic modulus of the reinforcing substrate is 1000 MPa or more and 2500 MPa or less.

[0015] A radiation detector according to a seventh aspect of the present disclosure is the radiation detector according to any one of the first to sixth aspects, wherein the material having a yield point is at least one of polycarbonate and polyethylene terephthalate.

[0016] According to an eighth aspect of the present disclosure, in the radiation detector of any one of the first to seventh aspects, a ratio of a thermal expansion coefficient of the reinforcing substrate to a thermal expansion coefficient of the conversion layer is 0.5 or more and 2 or less.

[0017] A radiation detector according to a ninth aspect of the present disclosure is the radiation detector according to any one of the first to eighth aspects, wherein the coefficient of thermal expansion of the reinforcing substrate is 30 ppm / K or more and 80 ppm / K or less.

[0018] A radiation detector according to a tenth aspect of the present disclosure is the radiation detector according to any one of the first to ninth aspects, wherein the conversion layer includes columnar crystals of CsI.

[0019] A radiation detector according to an eleventh aspect of the present disclosure is the radiation detector according to any one of the first to tenth aspects, wherein the plurality of pixels are formed in the pixel region by a direct formation method.

[0020] In addition, the 12th form of the radiation imaging device disclosed in the present invention comprises: a radiation detector of any form from the 1st form to the 11th form; a control unit, which outputs a control signal for reading out the charges accumulated in a plurality of pixels; and a circuit unit, which is electrically connected to the radiation detector through flexible wiring and reads out the charges from the plurality of pixels according to the control signal.

[0021] In addition, the 13th form of the present disclosure is a method for manufacturing a radiation detector, including: a process of coating an adhesive layer on a reinforcing substrate of a size corresponding to the radiation detector; a process of providing a flexible substrate via a peeling layer on a supporting body to form a substrate having a plurality of pixels in a pixel area of ​​the substrate for accumulating charges generated based on light converted from radiation; a process of forming a conversion layer for converting radiation into light on a surface of the substrate where the pixel area is provided; a process of attaching a reinforcing substrate containing a material having a yield point and having higher rigidity than the substrate to a surface of the conversion layer opposite to a surface facing the substrate side; and a process of peeling the substrate having the conversion layer and the reinforcing substrate from the supporting body.

[0022] The manufacturing method of the 14th aspect of the present disclosure is the manufacturing method of the 13th aspect, and further includes a step of connecting one end of a flexible wiring connected to a circuit unit that reads out charges accumulated in a plurality of pixels to the substrate before the step of attaching the reinforcing substrate.

[0023] Effects of the Invention

[0024] According to the present disclosure, destruction of the conversion layer in the radiation detector alone can be suppressed compared to a case where the material of the reinforcing substrate provided on the surface of the conversion layer facing the substrate-side surface is not considered. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 This is a structural diagram showing an example of the structure of a TFT (Thin Film Transistor) substrate in the radiation detector according to the first exemplary embodiment.

[0026] Figure 2 This is a cross-sectional view of an example of a substrate for explaining an exemplary embodiment.

[0027] Figure 3 This is a plan view of an example of the radiation detector according to the first exemplary embodiment as viewed from the side where the conversion layer is provided.

[0028] Figure 4 yes Figure 3 AA line cross-sectional view of the radiation detector shown.

[0029] Figure 5 This is a plan view of an example of the radiation detector according to the first exemplary embodiment as viewed from the first surface side of the TFT substrate.

[0030] Figure 6 It is an explanatory diagram for explaining an example of a method for manufacturing a radiation detector according to the first exemplary embodiment.

[0031] Figure 7 It is an explanatory diagram for explaining an example of a method for manufacturing a radiation detector according to the first exemplary embodiment.

[0032] Figure 8 It is a cross-sectional view of an example of a radiation detector according to a second exemplary embodiment.

[0033] Fig. 9 It is a cross-sectional view of another example of the radiation detector according to the exemplary embodiment.

[0034] Fig.10 FIG. 1 is a cross-sectional view of a pixel portion of another example of a radiation detector according to the exemplary embodiment.

[0035] Fig.11 It is a cross-sectional view showing a cross section of an example of a radiation imaging device to which the radiation detector according to the exemplary embodiment is applied.

[0036] Fig.12 It is a cross-sectional view showing a cross section of another example of a radiation imaging device to which the radiation detector according to the exemplary embodiment is applied.

[0037] Fig.13 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0038] Fig.14This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0039] Fig.15 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0040] Fig.16 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0041] Fig.17 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0042] Fig.18 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0043] Fig.19 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0044] Fig. 20 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0045] Fig.21 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0046] Fig. 22 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0047] Fig.23 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0048] Fig.24 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0049] Fig.25 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0050] Fig.26 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0051] Fig. 27 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0052] Fig.28 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0053] Fig.29 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0054] Fig.30 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0055] Fig.31 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0056] Fig.32 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0057] Fig.33 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0058] Fig.34 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0059] Fig.35 This is a plan view showing an example of the structure of a reinforcing member according to an exemplary embodiment of the disclosed technology.

[0060] Fig.36 This is a perspective view showing an example of the structure of a reinforcing member according to an exemplary embodiment of the disclosed technology.

[0061] Fig.37 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0062] Fig.38 This is a plan view showing an example of the structure of a reinforcing member according to an exemplary embodiment of the disclosed technology.

[0063] Fig.39 This is a plan view showing an example of the structure of a reinforcing member according to an exemplary embodiment of the disclosed technology.

[0064] Fig.40 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0065] Fig.41 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0066] Fig.42 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0067] Fig.43 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0068] Fig.44 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0069] Fig.45A This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0070] Fig.45B This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0071] Fig.45C This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0072] Fig.46 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0073] Fig.47 This is a cross-sectional view showing an example of the structure of a radiation imaging device according to an exemplary embodiment of the disclosed technology.

[0074] Fig.48 This is a cross-sectional view showing an example of the structure of a radiation imaging device according to an exemplary embodiment of the disclosed technology.

[0075] Fig.49 This is a cross-sectional view showing an example of the structure of a radiation imaging device according to an exemplary embodiment of the disclosed technology.

[0076] Fig.50 This is a cross-sectional view showing an example of the structure of a radiation imaging device according to an exemplary embodiment of the disclosed technology.

[0077] Fig.51 This is a cross-sectional view showing an example of the structure of a radiation imaging device according to an exemplary embodiment of the disclosed technology.

[0078] Fig.52 This is a cross-sectional view showing an example of the structure of a radiation imaging device according to an exemplary embodiment of the disclosed technology.

[0079] Fig.53 This is a cross-sectional view showing an example of the structure of a radiation imaging device according to an exemplary embodiment of the disclosed technology. DETAILED DESCRIPTION

[0080] Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Note that the exemplary embodiments do not limit the present invention.

[0081] [Implementation of the first example]

[0082] The radiation detector of the embodiment of this example has the function of detecting radiation that has passed through a subject and outputting image information representing a radiation image of the subject. The radiation detector of the embodiment of this example includes: a TFT (Thin Film Transistor) substrate and a conversion layer (see FIG. 1 ) that converts radiation into light. Figure 4 , the TFT substrate 12 and the conversion layer 14 of the radiation detector 10).

[0083] First, refer to Figure 1 An example of the structure of the TFT substrate 12 in the radiation detector of the embodiment of this example is described. In addition, the TFT substrate 12 of the embodiment of this example is a substrate in which a pixel array 31 including a plurality of pixels 30 is formed in a pixel region 35 of a substrate 11. Therefore, hereinafter, the expression "pixel region 35" is used as having the same meaning as "pixel array 31". The TFT substrate 12 of the embodiment of this example is an example of a substrate of the disclosed technology.

[0084] The substrate 11 is made of resin and has flexibility. The substrate 11 is, for example, a resin sheet containing plastic such as polyimide. The thickness of the substrate 11 can be any thickness that can obtain the desired flexibility according to the hardness of the material and the size of the TFT substrate 12. For example, when the substrate 11 is a resin sheet, the thickness can be 5 μm to 125 μm, and it is more preferable if the thickness is 20 μm to 50 μm.

[0085] In addition, the substrate 11 has the property of being able to withstand the manufacture of the pixel 30 described in detail later, and in the embodiment of this example, has the property of being able to withstand the manufacture of an amorphous silicon TFT (a-Si TFT). As a property of such a substrate 11, the thermal expansion coefficient at 300°C to 400°C is preferably the same as that of a silicon (Si) wafer (for example, ±5ppm / K), and specifically, preferably 20ppm / K or less. In addition, as the thermal shrinkage rate of the substrate 11, when the thickness is 25μm, the thermal shrinkage rate in the MD (Machine Direction) direction at 400°C is preferably 0.5% or less. In addition, the elastic modulus of the substrate 11 is preferably such that it does not have a transition point possessed by a general polyimide in the temperature range between 300°C and 400°C, and the elastic modulus at 500°C is greater than 1GPa.

[0086] In addition, if Figure 2 As shown, the substrate 11 of the present exemplary embodiment preferably has a particle layer 11L containing inorganic particles 11P having an average particle size of 0.05 μm or more and 2.5 μm or less on the surface opposite to the side where the conversion layer 14 is provided. A specific example of a resin sheet having such characteristics is XENOMAX (registered trademark).

[0087] In addition, the thickness described in the embodiment of this example was measured using a micrometer. The thermal expansion coefficient was measured in accordance with JIS K7197:1991. In addition, in the measurement, a test piece was cut from the main surface of the substrate 11 at an angle of 15 degrees, and the thermal expansion coefficient of each test piece cut out was measured, and the highest value was set as the thermal expansion coefficient of the substrate 11. In the measurement of the thermal expansion coefficient, the measurement was performed at intervals of 10°C at -50°C to 450°C for the MD (Machine Direction) direction and the TD (Transverse Direction) direction, respectively, and (ppm / °C) was converted into (ppm / K). In the measurement of the thermal expansion coefficient, a TMA4000S device manufactured by MAC Science was used, and the sample length was set to 10 mm, the sample width was set to 2 mm, and the initial load was set to 34.5 g / mm 2 , the heating rate was set to 5°C / min, and the atmosphere was set to argon. The elastic modulus was measured in accordance with JIS K 7171: 2016. In addition, during the measurement, test pieces were cut from the main surface of the substrate 11 at an angle of 15 degrees each, and a tensile test was performed on each of the cut test pieces, and the highest value was set as the elastic modulus of the substrate 11.

[0088] Each pixel 30 includes a sensor unit 34 that generates and accumulates charges based on the light converted by the conversion layer, and a switch element 32 that reads the charges accumulated by the sensor unit 34. In the embodiment of this example, a thin film transistor (TFT) is used as the switch element 32 as an example. Therefore, hereinafter, the switch element 32 is referred to as "TFT32".

[0089] The plurality of pixels 30 are arranged in a pixel region 35 of the TFT substrate 12 in a direction (with respect to Figure 1 The scanning wiring direction corresponding to the horizontal direction of the row direction (hereinafter referred to as the "row direction") and the cross direction relative to the row direction (hereinafter referred to as the "row direction") Figure 1 The vertical direction corresponds to the signal wiring direction (hereinafter also referred to as the "column direction") and is arranged two-dimensionally. Figure 1 , the arrangement of the pixels 30 is simplified, but for example, 1024×1024 pixels 30 are arranged in the row direction and the column direction.

[0090] In addition, in the radiation detector 10, a plurality of scanning wirings 38 for controlling the switching state (on and off) of the TFT 32 and a plurality of signal wirings 36 for reading out the charge accumulated in the sensor section 34 provided for each column of the pixels 30 are provided to intersect with each other. Each of the plurality of scanning wirings 38 is connected to the sensor section 34 via a connection region 43 (see FIG. Figure 4 as well as Figure 5 ) and the external drive unit 103 of the radiation detector 10 (see Figure 5 ) is connected to the TFT substrate 12, thereby flowing a control signal output from the driving unit 103 to control the switching state of the TFT 32. In addition, each of the plurality of signal wirings 36 is connected via a connection region 43 (see Figure 4 as well as Figure 5 ) and the signal processing unit 104 (see Figure 5 ) are connected, whereby the charge read out from each pixel 30 is output to the signal processing unit 104.

[0091] Furthermore, in the sensor portion 34 of each pixel 30, a common wiring 39 is provided in the wiring direction of the signal wiring 36 in order to apply a bias voltage to each pixel 30. The common wiring 39 is connected to a bias power supply outside the radiation detector 10 via a pad (not shown) provided on the TFT substrate 12, thereby applying a bias voltage to each pixel 30 from the bias power supply.

[0092] In the radiation detector 10 of the present exemplary embodiment, a conversion layer is formed on the TFT substrate 12 . Figure 3 This is a plan view of the radiation detector 10 according to the embodiment of this example as viewed from the side where the conversion layer 14 is formed. Figure 4 yes Figure 3 AA line cross-sectional view of the radiation detector 10 in FIG. 1 . In the following, when the structure of the radiation detector 10 is referred to as “upper”, it means that it is upper in the positional relationship based on the TFT substrate 12 side. For example, the conversion layer 14 is provided on the TFT substrate 12.

[0093] like Figure 3 as well as Figure 4 As shown, the conversion layer 14 of the present exemplary embodiment is provided on a region including a portion of the pixel region 35 in the first surface 12A of the TFT substrate 12. Thus, the conversion layer 14 of the present exemplary embodiment is not provided on a region of the outer periphery of the first surface 12A of the TFT substrate 12. The first surface 12A of the present exemplary embodiment is an example of a surface provided with a pixel region in the present disclosure.

[0094] In the embodiment of this example, a scintillator containing CsI (cesium iodide) is used as an example of the conversion layer 14. Such a scintillator preferably contains, for example, CsI:T1 (cesium iodide with thallium added) or CsI:Na (cesium iodide with sodium added) whose emission spectrum when irradiated with X-rays is 400nm to 700nm. In addition, the emission peak wavelength of CsI:Tl in the visible light region is 565nm.

[0095] In the radiation detector 10 of the present exemplary embodiment, the conversion layer 14 is formed directly on the TFT substrate 12 as a long columnar crystal (not shown) by a vapor deposition method such as vacuum evaporation, sputtering, and CVD (Chemical Vapor Deposition). As a method for forming the conversion layer 14, for example, the following vacuum evaporation method can be cited, that is, when CsI:T1 is used as the conversion layer 14, CsI:T1 is heated and vaporized by heating means such as a resistance heating crucible in an environment with a vacuum degree of 0.01Pa to 10Pa, and the temperature of the TFT substrate 12 is set to room temperature (20°C) to 300°C, so that CsI:T1 is deposited on the TFT substrate 12. The thickness of the conversion layer 14 is preferably 100μm to 800μm.

[0096] In the implementation of this example, as an example, Figure 4As shown in FIG. 1 , a buffer layer 13 is provided between the TFT substrate 12 and the conversion layer 14. The buffer layer 13 has a function of buffering the difference between the thermal expansion coefficient of the conversion layer 14 and the thermal expansion coefficient of the substrate 11. In addition, unlike the radiation detector 10 of the present exemplary embodiment, a structure without the buffer layer 13 may be provided, but the greater the difference between the thermal expansion coefficient of the conversion layer 14 and the thermal expansion coefficient of the substrate 11, the more preferably the buffer layer 13 is provided. For example, when the above-mentioned XENOMAX (registered trademark) is used for the substrate 11, the difference in thermal expansion coefficient with the conversion layer 14 becomes larger than that of other materials, so it is preferable as shown in FIG. Figure 4 The buffer layer 13 is provided as in the radiation detector 10 shown. As the buffer layer 13, a PI (PolyImide) film or a Parylene (registered trademark) film is used.

[0097] The protective layer 22 has a function of protecting the conversion layer 14 from moisture such as humidity. Examples of the material of the protective layer 22 include organic films, and specifically, single-layer films or laminated films such as PET (Polyethylene terephthalate), PPS (PolyPhenylene Sulfide), OPP (Oriented PolyPropylene), PEN (PolyEthylene Naphthalate), and PI. In addition, as the protective layer 22, a sheet of Alpet (registered trademark) in which aluminum is laminated by bonding aluminum foil or the like to an insulating sheet (film) such as PET can be used.

[0098] The reinforcing substrate 40 is provided via an adhesive layer 48 on a first surface 19A, which is a surface on the conversion layer 14 side of a stacked body 19 in which the TFT substrate 12 , the buffer layer 13 , the conversion layer 14 , and the protective layer 22 are stacked.

[0099] The reinforcing substrate 40 has higher rigidity than the substrate 11, and the dimensional change (deformation) with respect to the force applied in the direction perpendicular to the surface facing the conversion layer 14 is smaller than the dimensional change with respect to the force applied in the direction perpendicular to the first surface 12A of the TFT substrate 12. In addition, the thickness of the reinforcing substrate 40 of the embodiment of this example is thicker than the thickness of the substrate 11. In addition, the rigidity mentioned here means the difficulty of bending the reinforcing substrate 40 and the substrate 11, including the thickness of the reinforcing substrate 40 and the substrate 11, and the higher the rigidity, the more difficult it is to bend.

[0100] In addition, the reinforcing substrate 40 of the embodiment of this example is a substrate containing a material having a yield point. In addition, in the embodiment of this example, the "yield point" refers to a phenomenon in which stress temporarily drops sharply when a material is stretched, and refers to a point indicating yield on a curve indicating the relationship between stress and strain. As resins having a yield point, generally speaking, hard and viscous resins and soft and viscous resins with medium strength can be listed. As hard and viscous resins, for example, PC (Polycarbonate) and at least one of polyamide can be listed. In addition, as soft and viscous resins with medium strength, for example, high-density polyethylene and at least one of polypropylene can be listed.

[0101] In addition, the reinforcing substrate 40 of the embodiment of this example preferably has a bending modulus of 1000 MPa or more and 2500 MPa or less. The method for measuring the bending modulus is based on, for example, JIS K 7171: 2016. If the bending modulus becomes lower, the thickness of the reinforcing substrate 40 must be increased for rigidity. Therefore, from the viewpoint of suppressing the thickness, the reinforcing substrate 40 more preferably has a bending modulus of 2000 MPa or more and 2500 MPa or less.

[0102] In addition, the coefficient of thermal expansion (CTE: Coefficient of Thermal Expansion) of the reinforcing substrate 40 of the present exemplary embodiment is preferably close to the coefficient of thermal expansion of the material of the conversion layer 14, and more preferably, the ratio of the coefficient of thermal expansion of the reinforcing substrate 40 to the coefficient of thermal expansion of the conversion layer 14 is preferably 0.5 or more and 2 or less. For example, when the conversion layer 14 is made of CsI:T1, the coefficient of thermal expansion is 50 ppm / K. In this case, as the material of the reinforcing substrate 40, polyvinyl chloride (PVC: Polyvinyl Chloride) with a coefficient of thermal expansion of 60 ppm / K to 80 ppm / K, acrylic with a coefficient of thermal expansion of 70 ppm / K to 80 ppm / K, PET with a coefficient of thermal expansion of 65 to 70 ppm / K, PC with a coefficient of thermal expansion of 65 ppm / K, and Teflon with a coefficient of thermal expansion of 45 ppm / K to 70 ppm / K can be cited. Furthermore, considering the above-mentioned bending elastic modulus, as the material of the reinforcing substrate 40, it is more preferable to use a material containing at least one of PET and PC.

[0103] like Figure 3 as well as Figure 4 As shown in FIG. 1 , the strengthening substrate 40 of the present exemplary embodiment is provided in a region of the first surface 12A of the TFT substrate 12 that is larger than the region where the conversion layer 14 is provided. Figure 3 as well as Figure 4As shown, the end portion of the reinforcing substrate 40 protrudes to the outside (toward the outer peripheral portion of the TFT substrate 12 ) beyond the outer peripheral portion of the conversion layer 14 .

[0104] like Figure 4 As shown in FIG. 1 , a connection region 43 is provided on the outer periphery of the TFT substrate 12. A flexible cable 112, which will be described in detail later, is connected to the connection region 43. The flexible cable 112 is connected to the drive unit 103 and the signal processing unit 104 (both refer to FIG. 1 ). Figure 5 ) is connected to at least one of the two circuits. The driving unit 103 and the signal processing unit 104 of the present exemplary embodiment are an example of the circuit unit disclosed in the present invention. Figure 5 2 is a plan view showing an example of a state where the driving section 103 and the signal processing section 104 are connected to the radiation detector 10 of the present exemplary embodiment as viewed from the first surface 12A side of the TFT substrate 12 .

[0105] like Figure 5 As shown in the example, the flexible cable 112 is electrically connected to the connection area 43 of the TFT substrate 12. In addition, in the embodiment of this example, the connection related to the components including the flexible cable 112 referred to as "cable" means electrical connection unless otherwise mentioned. In addition, the flexible cable 112 includes a signal line (omitted from the figure) composed of a conductor, and the signal line is connected to the connection area 43 to be electrically connected. The flexible cable 112 of the embodiment of this example is an example of a flexible wiring disclosed in the present invention. In addition, when it is referred to as "cable" below, it means flexible (having flexibility).

[0106] In the connection area 43 (43A) of the TFT substrate 12, a plurality of (in Figure 5 The flexible cable 112 has one end that connects the drive unit 103 and the scanning wiring 38 (see Figure 1 ) function. A plurality of signal lines (not shown) included in the flexible cable 112 are connected to the scanning wiring 38 (see Figure 1 )connect.

[0107] Meanwhile, the other end of the flexible cable 112 is thermally compressed to a connection region 243 (243A) provided in the outer peripheral region of the drive substrate 202. A plurality of signal lines (not shown) included in the flexible cable 112 are connected to a drive component 250 such as a circuit and an element mounted on the drive substrate 202 via the connection region 243.

[0108] exist Figure 5 In FIG. 2 , as an example, nine driving components 250 ( 250A to 250I) are shown mounted on the driving substrate 202. Figure 5As shown, the driving member 250 of this exemplary embodiment is arranged along the intersecting direction X which intersects the bending direction Y, and the bending direction Y is a direction along the side of the TFT substrate 12 corresponding to the connection region 43 (43A).

[0109] The driving substrate 202 of the embodiment of this example is a flexible PCB (Printed Circuit Board) substrate, which is a so-called flexible substrate. The driving component 250 mounted on the driving substrate 202 is a component mainly used for processing digital signals (hereinafter referred to as a "digital system component"). Specific examples of the driving component 250 include digital buffers, bypass capacitors, pull-up / pull-down resistors, damping resistors, and EMC (Electro Magnetic Compatibility) countermeasure chip components. In addition, the driving substrate 202 does not necessarily have to be a flexible substrate, and can also be set to an inflexible rigid substrate described later.

[0110] Digital system components tend to have a smaller area (size) than analog system components described later. In addition, digital system components tend to be less susceptible to electrical interference, in other words, noise, than analog system components. Therefore, in the embodiment of this example, the substrate on the side that bends along with the bend of the TFT substrate 12 when the TFT substrate 12 bends is set as the drive substrate 202 on which the drive component 250 is mounted.

[0111] Furthermore, a driving circuit unit 212 is mounted on the flexible cable 112 connected to the driving substrate 202. The driving circuit unit 212 is connected to a plurality of signal lines (not shown) included in the flexible cable 112.

[0112] In the embodiment of this example, the driving unit 103 is realized by the driving component 250 mounted on the driving substrate 202 and the driving circuit unit 212. The driving circuit unit 212 is an IC (Integrated Circuit) including circuits different from the driving component 250 mounted on the driving substrate 202 among various circuits and elements realizing the driving unit 103.

[0113] As described above, in the radiation detector 10 of the present exemplary embodiment, the TFT substrate 12 and the drive substrate 202 are electrically connected via the flexible cable 112 , thereby being connected to the drive section 103 and the scanning wiring 38 , respectively.

[0114] On the other hand, in the connection region 43 (43B) of the TFT substrate 12, a plurality of (in Figure 5The flexible cable 112 includes four (four in the figure) one end. The plurality of signal lines (not shown) included in the flexible cable 112 are connected to the signal wiring 36 (see FIG. 1 ) via the connection region 43. Figure 1 The flexible cable 112 has a structure that connects the signal processing unit 104 and the signal wiring 36 (see Figure 1 ) connection function.

[0115] On the other hand, the other end of the flexible cable 112 is electrically connected to a connector 330 provided in the connection area 243 (243B) of the signal processing substrate 304. A plurality of signal lines (not shown) included in the flexible cable 112 are connected to a signal processing component 350 such as a circuit and an element mounted on the signal processing substrate 304 via the connector 330. For example, the connector 330 may be a connector with a ZIF (Zero Insertion Force) structure or a connector with a Non-ZIF structure. Figure 5 As an example, the state where nine signal processing components 350 (350A to 350I) are mounted on the signal processing substrate 304 is shown. Figure 5 As shown, the signal processing section 350 of the present exemplary embodiment is arranged along the intersecting direction X which is a direction along the connection region 43 ( 43B) of the TFT substrate 12 .

[0116] In addition, the signal processing substrate 304 of the present exemplary embodiment is an inflexible PCB substrate, a so-called rigid substrate. Therefore, the thickness of the signal processing substrate 304 is thicker than that of the drive substrate 202 . In addition, the rigidity is higher than that of the drive substrate 202 .

[0117] The signal processing component 350 mounted on the signal processing substrate 304 is a component mainly used for processing analog signals (hereinafter referred to as an "analog system component"). Specific examples of the signal processing component 350 include an operational amplifier, an analog-to-digital converter (ADC), a digital-to-analog converter (DAC), a power supply IC, etc. In addition, the signal processing component 350 of the embodiment of this example also includes a coil around a power supply with a relatively large component size, and a large-capacity capacitor for smoothing.

[0118] As described above, analog system components tend to have a larger area (size) than digital system components. In addition, analog system components tend to be more susceptible to electrical interference, in other words, noise, than digital system components. Therefore, in the embodiment of this example, the substrate on the side that does not bend (is not affected by the bending) even when the TFT substrate 12 is bent is set as the signal processing substrate 304 on which the signal processing component 350 is mounted.

[0119] Furthermore, a signal processing circuit unit 314 is mounted on the flexible cable 112 connected to the signal processing substrate 304 . The signal processing circuit unit 314 is connected to a plurality of signal lines (not shown) included in the flexible cable 112 .

[0120] In the embodiment of this example, the signal processing unit 104 is implemented by the signal processing unit 350 mounted on the signal processing substrate 304 and the signal processing circuit unit 314. The signal processing circuit unit 314 is an IC including a circuit different from the signal processing unit 350 mounted on the signal processing substrate 304 among various circuits and elements that implement the signal processing unit 104.

[0121] As described above, in the radiation detector 10 of the present exemplary embodiment, the TFT substrate 12 and the signal processing substrate 304 are electrically connected via the flexible cable 112 , thereby being connected to the signal processing section 104 and the signal wiring 36 , respectively.

[0122] In addition, if Figure 4 As shown in the example, the radiation detector 10 of the present exemplary embodiment includes a spacer 46 that seals the side surface of the conversion layer 14 between the reinforcing substrate 40 and the first surface 12A of the TFT substrate 12 , with the flexible cable 112 , the moisture-proofing agent 44 and the adhesive layer 45 interposed therebetween.

[0123] The method of providing the spacer 46 is not particularly limited. For example, the spacer 46 may be attached to the adhesive layer 48 at the end of the reinforcing substrate 40 in advance, and the reinforcing substrate 40 provided with the spacer 46 may be attached to the TFT substrate 12 provided with the laminate 19, the flexible cable 112, the moisture-proof agent 44, and the adhesive layer 45, so that the spacer 46 is provided between the TFT substrate 12 and the reinforcing substrate 40. In addition, the width of the spacer 46 (the direction intersecting the stacking direction of the laminate 19) is not limited to Figure 4 For example, with Figure 4 Compared with the example shown, the width of the spacer 46 may be expanded to a position close to the conversion layer 14. Alternatively, the spacer 46 may be formed on the first surface 12A of the TFT substrate 12 by caulking with resin, ceramic or the like.

[0124] In addition, a protective film 42 having a function of protecting from moisture such as humidity is provided on the second surface 12B on the TFT substrate 12 side of the present exemplary embodiment. Examples of the material of the protective film 42 include the same materials as those of the protective layer 22 .

[0125] As an example of a method for manufacturing the radiation detector 10 according to the present exemplary embodiment, the following method can be cited. Figure 6 as well as Figure 7An example of a method of manufacturing the radiation detector 10 according to the present exemplary embodiment will be described.

[0126] A substrate is prepared in advance in which the adhesive layer 48 is applied to the reinforcing substrate 40 having a desired size in accordance with the radiation detector 10 and the spacers 46 are provided on the adhesive layer 48 .

[0127] On the other hand, Figure 6 As shown, the substrate 11 is formed via a release layer (not shown) on a support 400 such as a glass substrate thicker than the substrate 11. When the substrate 11 is formed by a lamination method, a sheet to be the substrate 11 is attached to the support 400. The surface of the substrate 11 corresponding to the second surface 12B of the TFT substrate 12 is in contact with the release layer (not shown).

[0128] Furthermore, a plurality of pixels 30 are formed in the pixel region 35 of the substrate 11. In the present exemplary embodiment, as an example, a plurality of pixels 30 are formed in the pixel region 35 of the substrate 11 via a primer layer (not shown) made of SiN or the like.

[0129] Furthermore, the conversion layer 14 is formed on the pixel region 35. In the embodiment of this example, first, the buffer layer 13 is formed in the region where the conversion layer 14 is set in the first surface 12A of the TFT substrate 12. Then, the conversion layer 14 of CsI as a columnar crystal is directly formed on the TFT substrate 12, more specifically, on the buffer layer 13 by a vapor deposition method such as a vacuum evaporation method, a sputtering method, and a CVD (Chemical Vapor Deposition) method. In this case, the side of the conversion layer 14 that is in contact with the pixel 30 becomes the base point side of the growth direction of the columnar crystal.

[0130] In addition, in the case where the conversion layer 14 of CsI is directly provided on the TFT substrate 12 by vapor deposition, a reflective layer (not shown) having a function of reflecting light converted by the conversion layer 14 may be provided on the surface of the conversion layer 14 opposite to the side in contact with the TFT substrate 12. The reflective layer may be provided directly on the conversion layer 14 or via a bonding layer or the like. As the material of the reflective layer, an organic material is preferably used, for example, white PET, TiO 2 、Al 2 O 3 At least one of PET, foamed white PET, polyester-based high-reflection sheet, and specular reflective aluminum is used as the material. In particular, white PET is preferably used as the material from the viewpoint of reflectivity. In addition, the polyester-based high-reflection sheet is a sheet (film) having a multilayer structure in which a plurality of thin polyester sheets are overlapped.

[0131] In addition, in the case of using a scintillator of CsI as the conversion layer 14, the conversion layer 14 can be formed on the TFT substrate 12 by a method different from the embodiment of this example. For example, a plate on which CsI is evaporated by a vapor deposition method can be prepared, and the side of the CsI that is not in contact with the aluminum plate and the pixel 30 of the TFT substrate 12 can be attached by an adhesive sheet or the like, thereby forming the conversion layer 14 on the TFT substrate 12. In this case, it is preferable to attach the conversion layer 14 in a state in which the entire conversion layer 14 including the aluminum plate is covered with a protective film to the pixel area 35 of the TFT substrate 12. In addition, in this case, the side of the conversion layer 14 in contact with the pixel area 35 becomes the front end side of the growth direction of the columnar crystal.

[0132] Furthermore, unlike the radiation detector 10 of the present exemplary embodiment, GOS (Gd 2 O 2 In this case, for example, a sheet in which GOS is dispersed in an adhesive such as a resin is prepared and attached to a support such as white PET via an adhesive layer, and the side of the GOS not attached to the support and the pixel region 35 of the TFT substrate 12 are attached via an adhesive sheet, so that the conversion layer 14 can be formed on the TFT substrate 12. In addition, when CsI is used for the conversion layer 14, the conversion efficiency from radiation to visible light becomes higher than when GOS is used.

[0133] Furthermore, the flexible cable 112 is thermally compressed to the connection region 43 ( 43A and 43B) of the TFT substrate 12 , so that a plurality of signal lines (not shown) included in the flexible cable 112 are electrically connected to the connection region 43 ( 43A and 43B) of the TFT substrate 12 .

[0134] Furthermore, the flexible cable 112 is thermally compressed and bonded to the connection region 243 ( 243A) of the drive substrate 202 , so that a plurality of signal lines (not shown) included in the flexible cable 112 are electrically connected to the drive component 250 mounted on the drive substrate 202 .

[0135] Then, the reinforcing substrate 40 provided with the spacer 46 prepared in advance is attached to the TFT substrate 12 on which the conversion layer 14 is formed and to which the flexible cable 112 is connected, thereby sealing the conversion layer 14. In addition, when the above-mentioned attachment is performed, although it is performed under atmospheric pressure or reduced pressure (vacuum), it is preferably performed under reduced pressure in order to suppress the entry of air during the attachment.

[0136] Then, if Figure 7 As shown, the radiation detector 10 is peeled off from the support 400. In the case of peeling by mechanical peeling, Figure 7In the example shown, the side of the TFT substrate 12 opposite to the side connected to the flexible cable 112 is used as the starting point for peeling, and the TFT substrate 12 is gradually peeled off from the support body 400 along the side connected to the flexible cable 112 from the starting point. Figure 7 By peeling off in the direction of arrow D shown in the figure, mechanical peeling is performed, and the radiation detector 10 in a state where the flexible cable 112 is connected can be obtained.

[0137] In addition, the side set as the starting point of peeling is preferably the side that intersects with the longest side when the TFT substrate 12 is viewed from above. In other words, the side along the bending direction Y that is bent by peeling is preferably the longest side. In the embodiment of this example, the side where the drive substrate 202 is connected by the flexible cable 112 is longer than the side where the signal processing substrate 304 is connected by the flexible cable 112. Therefore, the starting point of peeling is set to the side opposite to the side where the connection area 43 (43B) is provided.

[0138] In the present exemplary embodiment, after the TFT substrate 12 is further peeled off from the support body 400, the flexible cable 112 of the radiation detector 10 and the connector 330 of the signal processing substrate 304 are electrically connected. Figure 3 to Figure 5 An example of the radiation detector 10 is shown.

[0139] Furthermore, the present invention is not limited to the embodiment of this example, and the mechanical separation may be performed after the flexible cable 112 of the radiation detector 10 and the connector 330 of the signal processing board 304 are electrically connected.

[0140] When mechanical peeling is performed, in the radiation imaging device 1 of the present exemplary embodiment, as shown in FIG. Figure 6 as well as Figure 7 As shown, since the drive substrate 202 is a flexible substrate, the drive substrate 202 also bends according to the bending of the TFT substrate 12 .

[0141] Here, when the TFT substrate 12 is peeled off from the support 400, the TFT substrate 12 is easily bent because the base material 11 is flexible. When the TFT substrate 12 is greatly bent, the TFT substrate 12 is also greatly bent, and as a result, the conversion layer 14 may be peeled off from the TFT substrate 12. In particular, the end of the conversion layer 14 becomes easy to be peeled off from the TFT substrate 12. In addition, not limited to the case where the TFT substrate 12 is peeled off from the support 400, when the radiation detector 10 is handled as a single body in the middle of the manufacturing process of the radiation imaging device 1, the TFT substrate 12 is bent, and the conversion layer 14 may be peeled off from the TFT substrate 12. In contrast, in the radiation detector 10 of the present exemplary embodiment, the reinforcing substrate 40, which is made of a material having a yield point and has higher rigidity than the base material 11, is provided on the first surface 19A, which is the surface on the side opposite to the first surface 12A of the TFT substrate 12. Therefore, according to the radiation detector 10 of the present exemplary embodiment, it is possible to suppress the TFT substrate 12 from being greatly warped, and it is possible to suppress the conversion layer 14 from being peeled off from the TFT substrate 12 .

[0142] [Implementation of the Second Example]

[0143] Next, the implementation of the second example is described. Figure 8 2 is a cross-sectional view of an example of the radiation detector 10 according to the embodiment of this example.

[0144] like Figure 8 As shown in FIG. 1 , in the radiation detector 10 of the present exemplary embodiment, a reinforcing member 41 is provided on the second surface 12B on the TFT substrate 12 side. Figure 8 As shown, a protective film 42 is provided between the TFT substrate 12 and the reinforcing member 41 , similarly to the above-described exemplary embodiment.

[0145] The reinforcing member 41 is similar to the reinforcing substrate 40, and has a higher rigidity than the base material 11, and a smaller dimensional change (deformation) with respect to a force applied in a direction perpendicular to the first surface 12A than a dimensional change with respect to a force applied in a direction perpendicular to the first surface 12B in the base material 11. In addition, the thickness of the reinforcing member 41 of the embodiment of this example is thicker than the thickness of the base material 11 and thinner than the thickness of the reinforcing substrate 40. As the material of the reinforcing member 41 of the embodiment of this example, a thermoplastic resin is preferably used, and the same material as the reinforcing substrate 40 can be used. In addition, the rigidity mentioned here also means the difficulty of bending the reinforcing member 41 and the base material 11, including the thickness of the reinforcing member 41 and the base material 11, and the higher the rigidity, the more difficult it is to bend.

[0146] The radiation detector 10 of the present exemplary embodiment is manufactured by, for example, the same manufacturing method as the above-mentioned manufacturing method of the radiation detector 10 in the first exemplary embodiment, wherein the reinforcing substrate 40 provided with the spacer 46 is attached to the TFT substrate 12 provided with the laminate 19, and then the TFT substrate 12 is peeled off from the support body 400. Then, the protective film 42 and the reinforcing member 41 are provided on the second surface 12B of the TFT substrate 12 by coating or the like, thereby making it possible to manufacture the radiation detector 10 of the present exemplary embodiment.

[0147] In the radiation detector 10 of the present exemplary embodiment, a reinforcing member 41 having higher rigidity than the base material 11 is provided on the second surface 12B of the TFT substrate 12 that is opposite to the first surface 12A on which the plurality of pixels 30 are formed. Therefore, compared with the radiation detector 10 of the above-described exemplary embodiments, it is possible to suppress the TFT substrate 12 from being greatly bent, and to suppress the conversion layer 14 from being peeled off from the TFT substrate 12.

[0148] In addition, for example, when the difference between the thermal expansion coefficient of the conversion layer 14 and the thermal expansion coefficient of the reinforcing substrate 40 is relatively large, the TFT substrate 12 becomes easy to warp. In contrast, in the radiation detector 10 of the present exemplary embodiment, the TFT substrate 12 is sandwiched between the reinforcing substrate 40 and the reinforcing member 41, so that the warping of the TFT substrate 12 caused by the difference in thermal expansion coefficient or the like can be suppressed.

[0149] As described above, the radiation detector 10 of each of the above-mentioned exemplary embodiments comprises: a TFT substrate 12, in which a plurality of pixels 30 for accumulating charges generated based on light converted from radiation are formed in a pixel area 35 of a flexible substrate 11; a conversion layer 14, which is provided on the surface of the substrate 11 on which the pixel area 35 is provided, i.e., the first surface 12A, and converts radiation into light; and an enhancement substrate 40, which is provided on the surface of the conversion layer 14 on the side opposite to the surface on the TFT substrate 12 side, i.e., the first surface 19A, and contains a material having a yield point and has higher rigidity than the substrate 11.

[0150] In the radiation detector 10 of each of the above-described exemplary embodiments, since the reinforcing substrate 40, which is made of a material having a yield point and has higher rigidity than the base material 11, is provided on the conversion layer 14, it is possible to suppress the TFT substrate 12 from being greatly bent. Therefore, according to the radiation detector 10 of each of the above-described exemplary embodiments, when the radiation detector 10 is handled as a single body, it is possible to suppress the conversion layer 14 from being peeled off from the TFT substrate 12.

[0151] In addition, the size of the reinforcing substrate 40 is not limited to the above-mentioned exemplary embodiments. Fig. 9As shown in the example, the end portions (outer peripheries) of the reinforcing substrate 40 and the adhesive layer 48 and the end portions (outer peripheries) of the protective layer 22 may be at the same position. In addition, it is preferred that the reinforcing substrate 40 covers an area larger than the area covered by the conversion layer 14 on the first surface 12A of the TFT substrate 12, and it is more preferred that the reinforcing substrate 40 covers an area larger than the area covered on the entire upper surface of the conversion layer 14.

[0152] In addition, if Fig.10 As shown in the example, it is preferable that a layer 90 formed of an inorganic material is provided between the substrate 11 and the pixel 30, especially the gate electrode 80 of the TFT 32 of the pixel 30. Fig.10 In the example shown, SiNx, SiOx, etc. are listed as inorganic materials in this case. The drain electrode 81 and the source electrode 82 of the TFT 32 are formed in the same layer, and the gate electrode 80 is formed between the layer where the drain electrode 81 and the source electrode are formed and the substrate 11. In addition, a layer 90 formed of an inorganic material is provided between the substrate 11 and the gate electrode 80.

[0153] In addition, in the above-mentioned exemplary embodiments, Figure 1 Although the pixel 30 is described as being arranged in a two-dimensional matrix as shown, it is not limited thereto. For example, it can be arranged in one dimension or in a honeycomb arrangement. In addition, the shape of the pixel is not limited, and can be a rectangle or a polygon such as a hexagon. Furthermore, it is self-evident that the shape of the pixel array 31 (pixel area 35) is not limited.

[0154] In addition, the shape of the conversion layer 14 is not limited to the above-mentioned embodiments. In the above-mentioned embodiments, the shape of the conversion layer 14 is described as being rectangular, which is the same as the shape of the pixel array 31 (pixel region 35), but the shape of the conversion layer 14 may not be the same as the pixel array 31 (pixel region 35). In addition, the shape of the pixel array 31 (pixel region 35) may not be rectangular, for example, it may be other polygonal or circular.

[0155] In addition, in the manufacturing method of the radiation detector 10 described above, the process of peeling the TFT substrate 12 from the support body 400 by mechanical peeling is described, but the peeling method is not limited to the described method. For example, it is also possible to set a method of performing so-called laser peeling as follows, that is, irradiating a laser from the surface of the support body 400 on the opposite side of the TFT substrate 12 to peel the TFT substrate 12. Even in this case, according to the radiation detector 10, after the TFT substrate 12 is peeled from the support body 400, when the radiation detector 10 is handled as a single body, it is possible to suppress the conversion layer 14 from peeling from the TFT substrate 12.

[0156] In addition, the radiation detector 10 of the above-mentioned exemplary embodiments can be applied to an ISS (Irradiation Side Sampling) type radiation imaging device that irradiates radiation from the TFT substrate 12 side, and can also be applied to a PSS (Penetration Side Sampling) type radiation imaging device that irradiates radiation from the conversion layer 14 side.

[0157] exist Fig.11 2 is a cross-sectional view showing an example of a state in which the radiation detector 10 of the first exemplary embodiment is applied to the ISS type radiation imaging device 1 .

[0158] like Fig.11 As shown, the radiation detector 10, the power supply unit 108, and the control substrate 110 are arranged in a direction intersecting the incident direction of the radiation in the housing 120. The radiation detector 10 is arranged so that the side of the pixel array 31 where the conversion layer 14 is not provided faces the imaging surface 120A side of the housing 120 irradiated with the radiation that has passed through the subject.

[0159] The shell 120 is preferably lightweight, has a low absorption rate of radiation R, especially X-rays, and is highly rigid, and is preferably made of a material with a sufficiently high elastic modulus. As the material of the shell 120, it is preferred to use a material with a bending elastic modulus of 10,000 MPa or more. As the material of the shell 120, carbon or CFRP (Carbon Fiber Reinforced Plastics) having a bending elastic modulus of about 20,000 to 60,000 MPa can be appropriately used.

[0160] During the radiographic imaging of radiographic images by the radiographic imaging device 1, a load from the subject is applied to the imaging surface 120A of the housing 120. If the rigidity of the housing 120 is insufficient, the TFT substrate 12 may bend due to the load from the subject, which may cause problems such as damage to the pixels 30. By housing the radiation detector 10 in the housing 120 made of a material having a bending elastic modulus of 10,000 MPa or more, the bending of the TFT substrate 12 due to the load from the subject can be suppressed.

[0161] The control substrate 110 is a substrate on which an image memory 380 for storing image data corresponding to the charge read out from the pixel 30 of the pixel array 31 and a control unit 382 for controlling the charge read out from the pixel 30 are formed, and is electrically connected to the pixel 30 of the pixel array 31 via a flexible cable 112 including a plurality of signal wirings. Fig.11In the radiation imaging device 1 shown, a driving unit 103 for controlling the switching state of the TFT 32 of the pixel 30 through the control of the control unit 382 and a signal processing unit 104 for generating and outputting image data corresponding to the charge read from the pixel 30 are arranged on a flexible cable 112, which is a so-called COF (Chip on Film). However, at least one of the driving unit 103 and the signal processing unit 104 may be formed on the control substrate 110.

[0162] Furthermore, the control substrate 110 is connected to a power supply unit 108 that supplies power to the image memory 380 , the control unit 382 , and the like formed on the control substrate 110 via a power supply line 114 .

[0163] exist Fig.11 In the housing 120 of the radiographic imaging device 1 shown, a sheet 116 is further provided on the side where the radiation that has passed through the radiation detector 10 is emitted. As the sheet 116, for example, a copper sheet can be cited. The copper sheet is less likely to generate secondary radiation due to the incident radiation, and thus has a function of preventing scattering to the rear, i.e., the conversion layer 14 side. In addition, the sheet 116 preferably covers at least the entire surface of the conversion layer 14 on the side where the radiation is emitted, and preferably covers the entire conversion layer 14.

[0164] In addition, Fig.11 In the housing 120 of the radiation imaging device 1 shown, a protective layer 117 is further provided on the side where radiation is incident (the imaging surface 120A side). As the protective layer 117, a moisture-proof film such as an Alpet (registered trademark) sheet, a parylene (registered trademark) film, and an insulating sheet such as polyethylene terephthalate, which is a sheet of aluminum laminated by bonding aluminum foil or the like to an insulating sheet (film), etc., can be used. The protective layer 117 has a moisture-proof function and an anti-static function for the pixel array 31. Therefore, the protective layer 117 preferably covers at least the entire surface of the side where radiation is incident on the pixel array 31, and preferably covers the entire surface of the TFT substrate 12 on the side where radiation is incident.

[0165] In addition, Fig.11 , the power supply unit 108 and the control substrate 110 are both provided on one side of the radiation detector 10, specifically, on one side of the rectangular pixel array 31, but the positions of providing the power supply unit 108 and the control substrate 110 are not limited to Fig.11 For example, the power supply unit 108 and the control substrate 110 may be disposed on each of two opposing sides of the pixel array 31, or may be disposed on each of two adjacent sides.

[0166] In addition, Fig.122 is a cross-sectional view showing another example of a state in which the radiation detector 10 of the first exemplary embodiment is applied to the ISS type radiation imaging device 1 .

[0167] like Fig.12 As shown, in the housing 120 , the power supply unit 108 and the control board 110 are arranged in a direction intersecting the incident direction of the radiation, and the radiation detector 10 , the power supply unit 108 and the control board 110 are arranged in the incident direction of the radiation.

[0168] In addition, Fig.12 In the radiation imaging device 1 shown, a base 118 for supporting the radiation detector 10 and the control board 110 is provided between the control board 110 and the power supply unit 108 and the sheet 116. The base 118 is made of, for example, carbon.

[0169] In addition, the configuration and manufacturing method of the radiation detector 10 and the like described in the above-mentioned exemplary embodiments are merely examples and can, of course, be modified according to circumstances without departing from the gist of the present invention.

[0170] [Other exemplary embodiments]

[0171] First, refer to Figures 13 to 34 Another exemplary embodiment of the reinforcing substrate 40 will be described.

[0172] In addition, when the conversion layer 14 is formed by vapor deposition, as shown in FIG. Figures 13 to 34 As shown in FIG. 1 , the conversion layer 14 is formed to have an inclination in which the thickness gradually decreases toward the outer edge thereof. Hereinafter, the central region of the conversion layer 14, whose thickness can be regarded as substantially constant when manufacturing errors and measurement errors are ignored, is referred to as a central portion 14A. In addition, the peripheral region of the conversion layer 14, which has a thickness of, for example, 90% or less of the average thickness of the central portion 14A of the conversion layer 14, is referred to as a peripheral portion 14B. That is, the conversion layer 14 has an inclined surface inclined relative to the TFT substrate 12 in the peripheral portion 14B.

[0173] like Figures 13 to 34 As shown, a bonding layer 60 , a reflective layer 62 , an adhesive layer 64 , a protective layer 22 , and a bonding layer 48 may be provided between the conversion layer 14 and the enhancement substrate 40 .

[0174] The adhesive layer 60 covers the entire surface of the conversion layer 14 including the central portion 14A and the peripheral portion 14B of the conversion layer 14. The adhesive layer 60 has the function of fixing the reflective layer 62 on the conversion layer 14. The adhesive layer 60 preferably has light transmittance. As the material of the adhesive layer 60, for example, acrylic adhesives, hot melt adhesives and silicone adhesives can be used. As acrylic adhesives, for example, polyurethane acrylate, acrylic resin acrylate, and epoxy acrylate can be listed. As hot melt adhesives, for example, thermoplastic plastics such as EVA (ethylene-vinyl acetate copolymer resin), EAA (copolymer resin of ethylene and acrylic acid), EEA (ethylene-ethyl acrylate copolymer resin), and EMMA (ethylene-methyl methacrylate copolymer) can be listed. The thickness of the adhesive layer 60 is preferably 2 μm or more and 7 μm or less. By setting the thickness of the adhesive layer 60 to 2 μm or more, the effect of fixing the reflective layer 62 on the conversion layer 14 can be fully exerted. Furthermore, the risk of an air layer being formed between the conversion layer 14 and the reflective layer 62 can be suppressed. If an air layer is formed between the conversion layer 14 and the reflective layer 62, multiple reflections may occur in which light emitted from the conversion layer 14 is repeatedly reflected between the air layer and the conversion layer 14 and between the air layer and the reflective layer 62. In addition, by setting the thickness of the adhesive layer 60 to 7 μm or less, it is possible to suppress the decrease in MTF (Modulation Transfer Function) and DQE (Detective Quantum Efficiency).

[0175] The reflective layer 62 covers the entire surface of the adhesive layer 60. The reflective layer 62 has the function of reflecting the light converted by the conversion layer 14. The reflective layer 62 is preferably made of an organic material. As the material of the reflective layer 62, for example, white PET, TiO 2 、Al 2 O 3 , foamed white PET, polyester-based high-reflection sheet, and mirror-reflective aluminum, etc. The thickness of the reflective layer 62 is preferably not less than 10 μm and not more than 40 μm.

[0176] The adhesive layer 64 covers the entire surface of the reflective layer 62. The end of the adhesive layer 64 extends to the surface of the TFT substrate 12. That is, the adhesive layer 64 is bonded to the TFT substrate 12 at its end. The adhesive layer 64 has the function of fixing the reflective layer 62 and the protective layer 22 to the conversion layer 14. As the material of the adhesive layer 64, the same material as the material of the adhesive layer 60 can be used, but it is preferred that the adhesive force of the adhesive layer 64 is greater than the adhesive force of the adhesive layer 60.

[0177] The protective layer 22 covers the entire surface of the adhesive layer 64. That is, the protective layer 22 is provided to cover the entire conversion layer 14 and its end portion covers a portion of the TFT substrate 12. The protective layer 22 functions as a moisture-proof film that prevents moisture from entering the conversion layer 14. As a material for the protective layer 22, for example, an organic film containing an organic material such as PET, PPS, OPP, PEN, PI, etc. can be used. In addition, as the protective layer 22, a sheet of Alpet (registered trademark) can be used.

[0178] The reinforcing substrate 40 is provided on the surface of the protective layer 22 via the adhesive layer 48. As the material of the adhesive layer 48, for example, the same material as that of the adhesive layer 60 and the adhesive layer 48 can be used.

[0179] exist Fig.13 In the example shown, the reinforcing substrate 40 extends to the region corresponding to the central portion 14A and the peripheral portion 14B of the conversion layer 14, and the outer periphery of the reinforcing substrate 40 is bent along the inclination of the peripheral portion 14B of the conversion layer 14. The reinforcing substrate 40 is bonded to the protective layer 22 via the adhesive layer 48 in both the region corresponding to the central portion 14A and the region corresponding to the peripheral portion 14B of the conversion layer 14. Fig.13 In the illustrated example, the end portion of the reinforcing substrate 40 is arranged in a region corresponding to the peripheral portion 14B of the conversion layer 14 .

[0180] like Fig.14 As shown, the reinforcing substrate 40 may be provided only in the region corresponding to the central portion 14A of the conversion layer 14. In this case, the reinforcing substrate 40 is bonded to the protective layer 22 via the adhesive layer 48 in the region corresponding to the central portion 14A of the conversion layer 14.

[0181] like Fig.15 As shown, when the reinforcing substrate 40 extends to the region corresponding to the central portion 14A and the peripheral portion 14B of the conversion layer 14, the reinforcing substrate 40 may not have a bent portion along the inclination in the outer peripheral portion of the conversion layer 14. In this case, the reinforcing substrate 40 is bonded to the protective layer 22 via the adhesive layer 48 in the region corresponding to the central portion 14A of the conversion layer 14. In the region corresponding to the peripheral portion 14B of the conversion layer 14, a space corresponding to the inclination in the peripheral portion 14B of the conversion layer 14 is formed between the reinforcing substrate 40 and the reinforcing substrate 40.

[0182] Here, the terminal 113 provided in the connection area of ​​the outer peripheral portion of the TFT substrate 12 is connected to the flexible cable 112. The TFT substrate 12 is connected to the control substrate (refer to the control substrate 110, Fig.47When the TFT substrate 12 is bent, the flexible cable 112 may be peeled off from the TFT substrate 12 or may be out of position. In this case, it is necessary to reconnect the flexible cable 112 to the TFT substrate 12. This reconnection of the flexible cable 112 to the TFT substrate 12 is called rework. Figure 13 to Figure 15 As shown, by arranging the end of the reinforcing substrate 40 further inside than the end of the conversion layer 14 , rework can be performed more easily than in the case where the reinforcing substrate 40 extends to the vicinity of the connection region.

[0183] like Figure 16 to Figure 19 As shown in FIG. 1 , the reinforcing substrate 40 may be arranged such that its end is arranged outside the end of the conversion layer 14 and is aligned with the end of the adhesive layer 64 and the protective layer 22 extending onto the TFT substrate 12. In addition, the position of the end of the reinforcing substrate 40 does not need to be completely aligned with the position of the end of the adhesive layer 64 and the protective layer 22.

[0184] exist Fig.16 In the example shown, the reinforcing substrate 40 is bonded to the protective layer 22 via the adhesive layer 48 in the area corresponding to the central portion 14A of the conversion layer 14, and in the area corresponding to the peripheral portion 14B of the conversion layer 14, and further in the area outside it, a space corresponding to the inclination of the peripheral portion 14B of the conversion layer 14 is formed between the reinforcing substrate 40.

[0185] exist Fig.17 In the example shown, a filler 70 is provided in the area corresponding to the peripheral portion 14B of the conversion layer 14 and in the area further outside the conversion layer 14 and in the space formed between the conversion layer 14 (protective layer 22) and the reinforcing substrate 40. The material of the filler 70 is not particularly limited, and for example, a resin can be used. Fig.17 In the example shown, in order to fix the reinforcing substrate 40 to the filling material 70 , the adhesive layer 48 is provided over the entire region between the reinforcing substrate 40 and the filling material 70 .

[0186] The method of forming the filling material 70 is not particularly limited. For example, after the bonding layer 48 and the reinforcing substrate 40 are sequentially formed on the conversion layer 14 covered by the bonding layer 60, the reflective layer 62, the adhesive layer 64, and the protective layer 22, the filling material 70 having fluidity may be injected into the space formed between the conversion layer 14 (protective layer 22) and the reinforcing substrate 40, and the filling material 70 may be solidified. In addition, for example, after the conversion layer 14, the bonding layer 60, the reflective layer 62, the adhesive layer 64, and the protective layer 22 are sequentially formed on the TFT substrate 12, the filling material 70 may be formed, and the bonding layer 48 and the reinforcing substrate 40 may be sequentially formed to cover the conversion layer 14 and the filling material 70 covered by the bonding layer 60, the reflective layer 62, the adhesive layer 64, and the protective layer 22.

[0187] In this way, the filling material 70 is filled in the space formed between the conversion layer 14 (protective layer 22) and the strengthening substrate 40, thereby Fig.16 Compared with the embodiment shown in the figure, the reinforcing substrate 40 can be prevented from peeling off from the conversion layer 14 (protective layer 22). Furthermore, the conversion layer 14 is fixed to the TFT substrate 12 by both the reinforcing substrate 40 and the filler 70, so the conversion layer 14 can be prevented from peeling off from the TFT substrate 12.

[0188] exist Fig.18 In the example shown, the outer peripheral portion of the reinforcing substrate 40 is bent along the inclination of the peripheral edge portion 14B of the conversion layer 14, and also covers the portion of the adhesive layer 64 and the protective layer 22 covering the TFT substrate 12. In addition, the end of the reinforcing substrate 40 is aligned with the end of the adhesive layer 64 and the protective layer 22. In addition, the position of the end of the reinforcing substrate 40 does not need to be completely aligned with the position of the end of the adhesive layer 64 and the protective layer 22.

[0189] The ends of the reinforcing substrate 40, the adhesive layer 48, the protective layer 22, and the adhesive layer 64 are sealed by a sealing member 72. The sealing member 72 is preferably provided in an area from the surface of the TFT substrate 12 to the surface of the reinforcing substrate 40, and does not cover the pixel area 35. As a material for the sealing member 72, a resin can be used, and a thermoplastic resin is particularly preferred. Specifically, acrylic paste, polyurethane paste, and the like can be used as the sealing member 72. The reinforcing substrate 40 has higher rigidity than the protective layer 22, and a restoring force that eliminates the bending acts on the bent portion of the reinforcing substrate 40, thereby causing the protective layer 22 to peel off. By sealing the ends of the reinforcing substrate 40, the adhesive layer 48, the protective layer 22, and the adhesive layer 64 with the sealing member 72, the peeling of the protective layer 22 can be suppressed.

[0190] exist Fig.19 In the example shown, Fig.17Similarly to the manner shown, a filling material 70 is provided in the space formed between the conversion layer 14 (protective layer 22) and the reinforcing substrate 40 in the region corresponding to the peripheral portion 14B of the conversion layer 14 and in the region further outside thereof. In addition, in the region corresponding to the end of the conversion layer 14, another reinforcing substrate 40A is further laminated on the surface of the reinforcing substrate 40 via an adhesive layer 48A. More specifically, the reinforcing substrate 40A is provided in the region spanning the end (outer edge, edge) of the conversion layer 14. The reinforcing substrate 40A may also be formed of the same material as the reinforcing substrate 40. In the radiation detector 10, the deflection amount of the TFT substrate 12 is relatively large at the end of the conversion layer 14. In the region corresponding to the end of the conversion layer 14, by forming a laminated structure composed of the reinforcing substrates 40 and 40A, the effect of suppressing the deflection of the TFT substrate 12 at the end of the conversion layer 14 can be promoted.

[0191] like Figure 16 to Figure 19 As shown, when the end of the reinforcing substrate 40 is arranged to be arranged on the outside than the end of the conversion layer 14 and to be consistent with the ends of the adhesive layer 64 and the protective layer 22, rework can be easily performed compared to the case where the reinforcing substrate 40 extends to the vicinity of the connection area.

[0192] In addition, if Figure 20 to Figure 23 As shown, the reinforcing substrate 40 may be disposed such that its end is located outside the ends of the adhesive layer 64 and the protective layer 22 extending onto the TFT substrate 12 and inside the end of the TFT substrate 12 .

[0193] exist Fig. 20 In the example shown, the enhancing substrate 40 is bonded to the protective layer 22 via the adhesive layer 48 in the area corresponding to the central portion 14A of the conversion layer 14, and a space corresponding to the inclination in the peripheral portion 14B of the conversion layer 14 is formed in the area corresponding to the peripheral portion 14B of the conversion layer 14, and further in the area outside thereof, between the conversion layer 14 (protective layer 22) and the enhancing substrate 40, and between the TFT substrate 12 and the enhancing substrate 40.

[0194] exist Fig.21 In the example shown, the end of the reinforcing substrate 40 is supported by the spacer 46. That is, one end of the spacer 46 is connected to the first surface 12A of the TFT substrate 12, and the other end of the spacer 46 is connected to the end of the reinforcing substrate 40 via the adhesive layer 47. By supporting the end of the reinforcing substrate 40 that forms a space between the TFT substrate 12 and extends by the spacer 46, it is possible to suppress the peeling of the reinforcing substrate 40. In addition, the deflection suppression effect of the reinforcing substrate 40 can be applied to the vicinity of the end of the TFT substrate 12. In addition, instead of providing the spacer 46 or in addition to providing the spacer 46, it is also possible to imitate Fig.17 In the example shown, the filling material is filled in the space formed between the conversion layer 14 (protective layer 22 ) and the reinforcing substrate 40 , and between the TFT substrate 12 and the reinforcing substrate 40 .

[0195] exist Fig. 22 In the example shown, the outer periphery of the reinforcing substrate 40 is bent along the inclination of the peripheral edge portion 14B of the conversion layer 14, and the portion of the adhesive layer 64 and the protective layer 22 covering the TFT substrate 12 and the TFT substrate 12 outside thereof are also covered. That is, the ends of the adhesive layer 64 and the protective layer 22 are sealed by the reinforcing substrate 40. The portion of the reinforcing substrate 40 extending onto the TFT substrate 12 is bonded to the TFT substrate 12 via the adhesive layer 48. In this way, by covering the ends of the adhesive layer 64 and the protective layer 22 with the reinforcing substrate 40, it is possible to suppress the peeling of the protective layer 22. Alternatively, it is also possible to imitate Fig.18 In the described example, the end portion of the strengthening substrate 40 is sealed by the sealing member 72 .

[0196] exist Fig.23 In the example shown, in a manner in which the end of the reinforcing substrate 40 is supported by the spacer 46, another reinforcing substrate 40A is further laminated via an adhesive layer 48A in a region of the surface of the reinforcing substrate 40 corresponding to the end of the conversion layer 14. More specifically, the reinforcing substrate 40A is provided in a region spanning the end (outer edge, rim) of the conversion layer 14. The reinforcing substrate 40A may be made of the same material as the reinforcing substrate 40. In the radiation detector 10, the amount of deflection of the TFT substrate 12 at the end of the conversion layer 14 is relatively large. By forming a laminated structure composed of the reinforcing substrates 40 and 40A in the region corresponding to the end of the conversion layer 14, the effect of suppressing the deflection of the TFT substrate 12 at the end of the conversion layer 14 can be promoted. In addition, instead of providing the spacer 46, it is also possible to imitate Fig.17 In the illustrated example, the filling material 70 is filled in the space formed between the conversion layer 14 (protective layer 22 ) and the reinforcing substrate 40 , and between the TFT substrate 12 and the reinforcing substrate 40 .

[0197] like Figure 24 to Figure 28 As shown, the strengthening substrate 40 may also be arranged so that its end is aligned with the end of the TFT substrate 12. In addition, the position of the end of the strengthening substrate 40 does not need to be completely aligned with the position of the end of the TFT substrate 12.

[0198] exist Fig.24In the example shown, the enhancing substrate 40 is bonded to the protective layer 22 via the adhesive layer 48 in the area corresponding to the central portion 14A of the conversion layer 14, and a space corresponding to the inclination in the peripheral portion 14B of the conversion layer 14 is formed in the area corresponding to the peripheral portion 14B of the conversion layer 14, and further in the area outside thereof, between the conversion layer 14 (protective layer 22) and the enhancing substrate 40, and between the TFT substrate 12 and the enhancing substrate 40.

[0199] exist Fig.25 In the example shown, the end of the reinforcing substrate 40 is supported by the spacer 46. That is, one end of the spacer 46 is connected to the flexible cable 112 provided at the end of the TFT substrate 12, and the other end of the spacer 46 is connected to the end of the reinforcing substrate 40 via the adhesive layer 47. By supporting the end of the reinforcing substrate 40 extending with a space formed between the spacer 46 and the TFT substrate 12, it is possible to suppress the peeling of the reinforcing substrate 40. In addition, the deflection suppression effect of the reinforcing substrate 40 can be applied to the vicinity of the end of the TFT substrate 12.

[0200] exist Fig.26 In the example shown, the space formed between the conversion layer 14 (protective layer 22) and the reinforcing substrate 40, and between the TFT substrate 12 and the reinforcing substrate 40, is filled with a filling material 70. In the embodiment of this example, the connection portion between the flexible cable 112 and the terminal 113 is covered with the filling material 70. In this way, the space formed between the conversion layer 14 (protective layer 22) and the reinforcing substrate 40, and between the TFT substrate 12 and the reinforcing substrate 40 is filled with the filling material 70, thereby Fig.24 Compared with the embodiment shown in the figure, the reinforcing substrate 40 can be prevented from peeling off from the conversion layer 14 (protective layer 22). Furthermore, the conversion layer 14 is fixed to the TFT substrate 12 by both the reinforcing substrate 40 and the filling material 70, so that the conversion layer 14 can be prevented from peeling off from the TFT substrate 12. In addition, the connection portion between the flexible cable 112 and the terminal 113 is covered by the filling material 70, so that the flexible cable 112 can be prevented from peeling off.

[0201] exist Fig. 27In the example shown, the outer peripheral portion of the reinforcing substrate 40 is bent along the inclination of the peripheral portion 14B of the conversion layer 14, and the portion where the adhesive layer 64 and the protective layer 22 cover the TFT substrate 12, the substrate outside thereof, and the connection portion between the terminal 113 and the flexible cable 112 are also covered. The portions of the reinforcing substrate 40 extending onto the TFT substrate 12 and the flexible cable 112 are bonded to the TFT substrate 12 and the flexible cable 112 via the adhesive layer 48, respectively. The connection portion between the flexible cable 112 and the terminal 113 is covered by the flex reinforcing substrate 40, so that the separation of the flexible cable 112 can be suppressed. In addition, since it is assumed that a control substrate equipped with electronic components is connected to the other end of the flexible cable 112, there is a possibility that relatively large deflection occurs in the TFT substrate 12 at the connection portion between the flexible cable 112 and the terminal 113. The connection portion between the flexible cable 112 and the terminal 113 is covered by the reinforcing substrate 40, so that the deflection of the TFT substrate 12 in this portion can be suppressed.

[0202] exist Fig.28 In the example shown, the space formed between the conversion layer 14 (protective layer 22) and the reinforcing substrate 40, and between the TFT substrate 12 and the reinforcing substrate 40 is filled with a filling material 70. In addition, in the region corresponding to the end of the conversion layer 14, another flexible reinforcing substrate 40A is further laminated on the surface of the reinforcing substrate 40 via an adhesive layer 48A. More specifically, the reinforcing substrate 40A is provided in a region spanning the end (outer edge, edge) of the conversion layer 14. The reinforcing substrate 40A can be made of the same material as the reinforcing substrate 40. In the radiation detector 10, the amount of deflection of the TFT substrate 12 is relatively large at the end of the conversion layer 14. In the region corresponding to the end of the conversion layer 14, by forming a laminated structure composed of the reinforcing substrates 40 and 40A, the effect of suppressing the deflection of the TFT substrate 12 at the end of the conversion layer 14 can be promoted.

[0203] In addition, if Figure 29 to Figure 33 As shown, the strengthening substrate 40 may be provided so that its end portion is located outside the end portion of the TFT substrate 12 .

[0204] exist Fig.29 In the example shown, the enhancing substrate 40 is bonded to the protective layer 22 via the adhesive layer 48 in the area corresponding to the central portion 14A of the conversion layer 14, and a space corresponding to the inclination in the peripheral portion 14B of the conversion layer 14 is formed in the area corresponding to the peripheral portion 14B of the conversion layer 14, and further in the area outside thereof, between the conversion layer 14 (protective layer 22) and the enhancing substrate 40, and between the TFT substrate 12 and the enhancing substrate 40.

[0205] exist Fig.30In the example shown, the end of the reinforcing substrate 40 is supported by the spacer 46. That is, one end of the spacer 46 is connected to the flexible cable 112 provided at the end of the TFT substrate 12, and the other end of the spacer 46 is connected to the end of the reinforcing substrate 40 via the adhesive layer 47. By supporting the end of the reinforcing substrate 40 extending with a space formed between the TFT substrate 12 and the spacer 46, it is possible to suppress the peeling of the reinforcing substrate 40. In addition, the deflection suppression effect of the reinforcing substrate 40 can be applied to the vicinity of the end of the TFT substrate 12.

[0206] exist Fig.31 In the example shown, the space formed between the conversion layer 14 (protective layer 22) and the reinforcing substrate 40, and between the TFT substrate 12 and the reinforcing substrate 40, is filled with a filling material 70. In the embodiment of this example, the connection portion between the flexible cable 112 and the terminal 113 is covered with the filling material 70. In this way, the space formed between the conversion layer 14 (protective layer 22) and the reinforcing substrate 40, and between the TFT substrate 12 and the reinforcing substrate 40 is filled with the filling material 70, thereby Fig.29 Compared with the embodiment shown in the figure, the reinforcing substrate 40 can be prevented from peeling off from the conversion layer 14 (protective layer 22). Furthermore, the conversion layer 14 is fixed to the TFT substrate 12 by both the reinforcing substrate 40 and the filling material 70, so that the conversion layer 14 can be prevented from peeling off from the TFT substrate 12. In addition, the connection portion between the flexible cable 112 and the terminal 113 is covered by the filling material 70, so that the flexible cable 112 can be prevented from peeling off.

[0207] exist Fig.32 In the example shown, the outer peripheral portion of the reinforcing substrate 40 is bent along the inclination of the peripheral portion 14B of the conversion layer 14, and the portion where the adhesive layer 64 and the protective layer 22 cover the TFT substrate 12, the substrate outside thereof, and the connection portion between the terminal 113 and the flexible cable 112 are also covered. The portions of the reinforcing substrate 40 extending onto the TFT substrate 12 and the flexible cable 112 are bonded to the TFT substrate 12 and the flexible cable 112 via the adhesive layer 48, respectively. The connection portion between the flexible cable 112 and the terminal 113 is covered by the reinforcing substrate 40, so that the separation of the flexible cable 112 can be suppressed. In addition, since it is assumed that a control substrate equipped with electronic components is connected to the other end of the flexible cable 112, there is a possibility that relatively large deflection occurs in the connection portion between the flexible cable 112 and the terminal 113. The connection portion between the flexible cable 112 and the terminal 113 is covered by the reinforcing substrate 40, so that the deflection of the TFT substrate 12 in this portion can be suppressed.

[0208] exist Fig.33In the example shown, the space formed between the conversion layer 14 (protective layer 22) and the reinforcing substrate 40, and between the TFT substrate 12 and the reinforcing substrate 40, is filled with a filling material 70. In addition, in the region corresponding to the end of the conversion layer 14, another reinforcing substrate 40A is further laminated on the surface of the reinforcing substrate 40 via an adhesive layer 48A. More specifically, the reinforcing substrate 40A is provided in a region spanning the end (outer edge, edge) of the conversion layer 14. The reinforcing substrate 40A can be made of the same material as the reinforcing substrate 40. In the radiation detector 10, the TFT substrate 12 is relatively deflected at the end of the conversion layer 14. By forming a laminated structure composed of the reinforcing substrates 40 and 40A in the region corresponding to the end of the conversion layer 14, the effect of suppressing the deflection of the TFT substrate 12 at the end of the conversion layer 14 can be promoted.

[0209] As described above, in the manufacturing process of the radiation detector 10, the TFT substrate 12 having flexibility is attached to the support body 400 such as a glass substrate, and after the conversion layer 14 is stacked on the TFT substrate 12, the support body 400 is peeled off from the TFT substrate 12. At this time, the TFT substrate 12 having flexibility is bent, and the pixels 30 formed on the TFT substrate 12 may be damaged. Before peeling the support body 400 from the TFT substrate 12, the support body 400 is preliminarily peeled off as shown in the following example. Figure 13 to Figure 33 By stacking the reinforcing substrate 40 on the conversion layer 14 in the illustrated manner, it is possible to suppress the bending of the TFT substrate 12 that occurs when the support body 400 is peeled off from the TFT substrate 12 , thereby reducing the risk of damage to the pixels 30 .

[0210] In addition, the reinforcing substrate 40 is not limited to a single layer (single layer), and may be composed of multiple layers. Fig.34 In the example shown, the radiation detector 10 shows a mode in which the strengthening substrate 40 is a multilayer film in which three layers of a first strengthening substrate 40B, a second strengthening substrate 40C, and a third strengthening substrate 40D are stacked in order from the side close to the conversion layer 14 .

[0211] When the reinforcing substrate 40 is formed into multiple layers, it is preferred that each layer included in the reinforcing substrate 40 has a different function. Fig.34In the example shown, the first reinforcing substrate 40B and the third reinforcing substrate 40D may be provided as non-conductive antistatic layers, and the second reinforcing substrate 40C may be provided as a conductive layer, so that the reinforcing substrate 40 has an electromagnetic shielding function. In this case, the first reinforcing substrate 40B and the third reinforcing substrate 40D may be, for example, an antistatic film such as a film using an antistatic coating "Colcoat" (trade name: manufactured by Colcoat Co., Ltd.). In addition, as the second reinforcing substrate 40C, for example, a conductive sheet, a conductive mesh sheet such as Cu, etc. may be provided.

[0212] For example, when the reading method of the radiation detector 10 is the ISS method, a control substrate 110, a power supply unit 108, etc. may be provided on the conversion layer 14 side (see Fig.52 ), but in the case where the enhanced substrate 40 has an anti-static function, the electromagnetic noise from the control substrate 110 and the power supply unit 108 can be shielded.

[0213] also, Fig.35 4 is a plan view showing an example of the structure of the reinforcing substrate 40. The reinforcing substrate 40 may have a plurality of through holes 40H on its main surface. The size and pitch of the through holes 40H are determined so that the desired rigidity can be obtained in the reinforcing substrate 40.

[0214] The reinforcing substrate 40 has a plurality of through holes 40H, so that air introduced into the bonding surface between the reinforcing substrate 40 and the conversion layer 14 can be discharged from the through holes 40H. This can suppress the generation of bubbles at the bonding surface between the reinforcing substrate 40 and the conversion layer 14.

[0215] In the absence of a means for discharging the air introduced to the joint surface between the reinforcing substrate 40 and the conversion layer 14, bubbles may be generated on the above-mentioned joint surface. For example, if the bubbles generated on the above-mentioned joint surface expand due to the heat generated when the radiation imaging device 1 is in operation, the adhesion between the reinforcing substrate 40 and the conversion layer 14 will decrease. As a result, the deflection suppression effect brought by the reinforcing substrate 40 may not be fully exerted. Fig.35 As shown, by utilizing a reinforcing substrate 40 having a plurality of through holes 40H, the generation of bubbles at the bonding surface between the reinforcing substrate 40 and the conversion layer 14 can be suppressed as described above, thereby maintaining the close contact between the reinforcing substrate 40 and the conversion layer 14 and maintaining the deflection suppression effect brought by the reinforcing substrate 40.

[0216] Fig.36 40 is a perspective view showing another example of the structure of the reinforcing substrate 40. Fig.36 In the example shown, the reinforcing substrate 40 has a concavo-convex structure on the bonding surface with the conversion layer 14. The concavo-convex structure is as shown in FIG. Fig.36As shown, the reinforcing substrate 40 may also be configured to include a plurality of grooves 63 arranged parallel to each other. Fig.37 As shown in FIG. 1 , the surface having the concavo-convex structure based on the plurality of grooves 63 is bonded to the conversion layer 14 covered by the reflective layer 62. In this way, the reinforcing substrate 40 has a concavo-convex structure on the bonding surface with the conversion layer 14, so that the air introduced into the bonding portion between the reinforcing substrate 40 and the conversion layer 14 can be discharged from the grooves 63. Fig.35 Similarly to the embodiment shown, it is possible to suppress the generation of bubbles at the bonding surface between the reinforcing substrate 40 and the conversion layer 14. Thus, the adhesion between the reinforcing substrate 40 and the conversion layer 14 can be maintained, and the deflection suppression effect by the reinforcing substrate 40 can be maintained.

[0217] Fig.38 as well as Fig.39 40 are top views showing another example of the structure of the reinforcing substrate 40. Fig.38 as well as Fig.39 As shown, the strengthening substrate 40 can be divided into a plurality of fragments 49. Fig.38 As shown, it can be divided into multiple segments 49 ( Fig.49 5 ~49 11 ) are arranged in one direction. In addition, the strengthening substrate 40 is as Fig.39 As shown, it can also be divided into multiple fragments 49 ( Fig.49 1 ~49 4 ) are arranged vertically and horizontally.

[0218] The larger the area of ​​the strengthening substrate 40 is, the easier it is to generate bubbles on the bonding surface between the strengthening substrate 40 and the conversion layer 14. Fig.38 as well as Fig.39 As shown, by dividing the reinforcing substrate 40 into a plurality of fragments 49, the generation of bubbles at the bonding surface between the reinforcing substrate 40 and the conversion layer 14 can be suppressed. Thus, the adhesion between the reinforcing substrate 40 and the conversion layer 14 can be maintained, and the deflection suppression effect brought by the reinforcing substrate 40 can be maintained.

[0219] Furthermore, the reinforcing member 51 may be provided on the side of the reinforcing member 41 opposite to the side in contact with the TFT substrate 12 (the second surface 12B). Figure 40 to Figure 44 Each of them is a cross-sectional view showing an example of the installation form of the reinforcing member 51.

[0220] exist Figure 40 to Figure 44In the example shown, the reinforcing member 51 is laminated via an adhesive layer 52 on the surface of the reinforcing member 41 opposite to the surface on the TFT substrate 12 side. The reinforcing member 51 can be made of the same material as the reinforcing substrate 40. When the radiation detector 10 is used as an ISS type, in order to minimize the area of ​​the portion where the reinforcing member 51 and the pixel area 35 overlap, it is preferred that the reinforcing member 51 is provided only on the outer periphery of the TFT substrate 12. That is, the reinforcing member 51 is preferably provided on the outer periphery of the TFT substrate 12. Figure 40 to Figure 44 The illustrated embodiment may be a ring having an opening 61 in a portion corresponding to the pixel region 35. Thus, by forming a stacked structure composed of the reinforcing member 41 and the reinforcing member 51 at the periphery of the TFT substrate 12, the rigidity of the periphery of the TFT substrate 12, which is more susceptible to deflection, can be enhanced.

[0221] exist Figure 40 to Figure 42 In the example shown, the reinforcing member 51 is provided in a region spanning the end (outer edge, edge) of the conversion layer 14. In the radiation detector 10, the TFT substrate 12 is relatively deflected at the end of the conversion layer 14. By forming a stacked structure composed of the reinforcing member 41 and the reinforcing member 51 in the region corresponding to the end of the conversion layer 14, the effect of suppressing the deflection of the TFT substrate 12 at the end of the conversion layer 14 can be promoted.

[0222] When the radiation detector 10 is used as an ISS system, Fig.40 As shown, when a part of the reinforcing member 51 overlaps with the pixel region 35, the image may be affected by the material of the reinforcing member 51. Therefore, when a part of the reinforcing member 51 overlaps with the pixel region 35, it is preferable to use plastic as the material of the reinforcing member 51.

[0223] like Fig.41 as well as Fig.42 As shown, the most preferred embodiment is when the reinforcing member 51 crosses the end (outer edge, margin) of the conversion layer 14 and does not overlap with the pixel region 35 (i.e., the end of the opening 61 of the reinforcing member 51 is arranged outside the pixel region 35). Fig.41 In the example shown, the position of the end of the opening 61 of the reinforcing member 51 is substantially consistent with the position of the end of the pixel region 35. Fig.42 In the illustrated example, the end of the opening 61 of the reinforcing member 51 is arranged between the end of the pixel region 35 and the end of the conversion layer 14 .

[0224] In addition, the position of the end of the opening 61 of the reinforcing member 51 is as follows: Fig.43 As shown, the position of the end of the conversion layer 14 may be substantially consistent. Fig.44As shown, the reinforcing member 51 may be arranged outside the end of the conversion layer 14. In this case, since the reinforcing member 51 is structured to span the end (outer edge, edge) of the conversion layer 14, the effect of suppressing the deflection of the TFT substrate 12 at the end of the conversion layer 14 may be reduced. However, a stacked structure composed of the reinforcing member 41 and the reinforcing member 51 is formed at the outer peripheral portion of the TFT substrate 12 where the connection portion of the flexible cable 112 and the terminal 113 exists, so the effect of suppressing the deflection of the TFT substrate 12 at the connection portion of the flexible cable 112 and the terminal 113 is maintained.

[0225] Furthermore, in the radiation detector 10 of each of the above-described exemplary embodiments, the TFT substrate 12 (base material 11 ) and the reinforcing member 41 are described as being of the same size, but the TFT substrate 12 and the reinforcing member 41 may be of different sizes.

[0226] For example, when the radiation detector 10 is applied to the radiation imaging device 1, the radiation detector 10 may be fixed to a housing 120 (see FIG. 1 ) that accommodates the radiation detector 10. Fig.11 In this case, for example, Fig.45A As shown in the example, the reinforcing member 41 may be made larger than the TFT substrate 12, and a sheet or the like may be provided, and the radiation detector 10 may be fixed by using a portion of the sheet or the like. For example, a method may be adopted in which a hole is provided in the sheet portion of the reinforcing member 41, and the reinforcing member 41 is fixed to the housing 120 (see FIG. 1 ) by using a screw passing through the hole. Fig.11 etc.) fixed.

[0227] The method of making the reinforcing member 41 larger than the TFT substrate 12 is not limited to Fig.45A Alternatively, the reinforcing member 41 may be formed of a plurality of stacked layers, with one layer being larger than the TFT substrate 12. For example, Fig.45B As shown, the reinforcing member 41 may also be configured as a two-layer structure having a first layer 41A having the same size as the TFT substrate 12 (substrate 11), and a second layer 41B that is larger than the TFT substrate 12. The first layer 41A and the second layer 41B are adhered by double-sided tape, an adhesive layer, etc. (not shown in the figure). As the first layer 41A, for example, it is preferably formed of the same material as the reinforcing member 41 described above, and has the same properties as the reinforcing member 41. In addition, the second layer 41B is adhered to the second surface 12B of the substrate 11 by double-sided tape, an adhesive layer, etc. (not shown in the figure). As the second layer 41B, for example, Alpet (registered trademark) can be applied. In addition, in the case where the reinforcing member 41 is constituted by a plurality of layers, Fig.45B In contrast to the way shown, Fig.45CAs shown, the first layer 41A may be attached to the second surface 12B of the base material 11 .

[0228] As described above, when the radiation detector 10 is fixed to the housing 120 (see Figure 7 In the case of bending the sheet part, etc., the sheet part may be fixed in a bent state. The thinner the thickness, the easier it is for the sheet part of the reinforcing member 41 to bend, and it is possible to bend only the sheet part without affecting the main body of the radiation detector 10. Therefore, in the case of bending the sheet part, such as Fig.45B as well as Fig.45C As in the example shown, it is preferable that the reinforcing member 41 be constituted by a plurality of stacked layers, and a part of the layers be larger than the TFT substrate 12 .

[0229] In addition, if Fig.46 As shown in the example, it can be combined with the above Figures 45A to 45C In contrast, the radiation detector 10 of the embodiment of the present invention has the reinforcing member 41 made smaller than the TFT substrate 12. By locating the end of the TFT substrate 12 outside the end of the reinforcing member 41, for example, when the radiation detector 10 is stored in the housing 120 (see Figure 7 When assembling by the method of FIG. 1 , etc., it is easy to confirm the position of the end of the TFT substrate 12, so the positioning accuracy can be improved. Fig.46 The embodiment shown is preferred because the same effect can be obtained as long as at least a part of the end portion of the TFT substrate 12 (base material 11 ) is located outside the reinforcing member 41 .

[0230] Furthermore, refer to Figures 47 to 53 An example of the radiation imaging device 1 in which the radiation detector 10 is accommodated in the housing 120 will be described. Figures 47 to 53 Each of them is a diagram showing another configuration example of the radiation imaging device 1 .

[0231] exist Fig.47 In the example shown above, Fig.11 The radiation imaging device 1 shown in FIG. 1 is also an example of the radiation imaging device 1 of the ISS method. Fig.48 The example shown is an example of a PSS-based radiation imaging device 1. Fig.47 as well as Fig.48 In the example shown, a structure is illustrated in which the radiation detector 10 , the control substrate 110 , and the power supply unit 108 are arranged side by side in the horizontal direction in the figure.

[0232] In addition, Fig.47 as well as Fig.48, the power supply unit 108 and the control substrate 110 are both provided on one side of the radiation detector 10, specifically, on one side of the rectangular pixel region 35, but the positions of the power supply unit 108 and the control substrate 110 are not limited to Fig.47 as well as Fig.48 For example, the power supply unit 108 and the control substrate 110 may be disposed on each of two opposing sides of the pixel region 35 , or may be disposed on each of two adjacent sides.

[0233] In addition, if Fig.47 as well as Fig.48 As in the example shown, when the radiation detector 10, the control substrate 110, and the power supply unit 108 are arranged side by side in a direction intersecting the direction in which the TFT substrate 12 and the conversion layer 14 are stacked, the thickness of the shell 120 can be different between the portion of the shell 120 where the power supply unit 108 and the control substrate 110 are respectively arranged and the portion of the shell 120 where the radiation detector 10 is arranged.

[0234] like Fig.48 As shown in the example, the power supply unit 108 and the control substrate 110 are each thicker than the radiation detector 10 in many cases. Fig.49 As in the example shown, the thickness of the portion of the housing 120 where the radiation detector 10 is provided may be thinner than the thickness of the portion of the housing 120 where the power supply unit 108 and the control board 110 are provided. In addition, in this case, when the portion of the housing 120 where the power supply unit 108 and the control board 110 are provided and the portion of the housing 120 where the radiation detector 10 is provided have different thicknesses, if a height difference is generated at the boundary between the two portions, there is a possibility that the subject who contacts the boundary 120B may feel uncomfortable, and therefore, the boundary 120B is preferably provided in an inclined state.

[0235] This makes it possible to configure an extremely thin portable electronic cassette that corresponds to the thickness of the radiation detector 10 .

[0236] In this case, for example, the material of the housing 120 may be different between the portion of the housing 120 where the power supply unit 108 and the control substrate 110 are provided, and the portion of the housing 120 where the radiation detector 10 is provided. Furthermore, for example, the portion of the housing 120 where the power supply unit 108 and the control substrate 110 are provided, and the portion of the housing 120 where the radiation detector 10 is provided may be configured as separate bodies.

[0237] As described above, the housing 120 preferably has a low absorption rate of radiation R, especially X-rays, and is highly rigid, and is preferably made of a material with a sufficiently high elastic modulus, but may also be made of a material having a high elastic modulus. Fig.50 As shown in the example, part 120C corresponding to the imaging surface 120A of the shell 120 has a low absorption rate of radiation R and high rigidity, and is made of a material with a sufficiently high elastic modulus, while other parts are made of a material different from that of part 120C, for example, a material with a lower elastic modulus than that of part 120C.

[0238] In addition, if Fig.51 As shown in the example, the radiation detector 10 and the inner wall surface of the housing 120 may be in contact. In this case, the radiation detector 10 and the inner wall surface of the housing 120 may be bonded via an adhesive layer, or may simply be in contact without an adhesive layer. In this way, the radiation detector 10 and the inner wall surface of the housing 120 are in contact, so that the rigidity of the radiation detector 10 can be further ensured.

[0239] In addition, Fig.52 In the example shown above, Fig.12 The radiation imaging device 1 shown in FIG. 1 is also an example of the radiation imaging device 1 of the ISS method. Fig.53 The example shown is an example of a PSS-based radiation imaging device 1. Fig.52 as well as Fig.53 In the example shown, the TFT substrate 12, the control substrate 110, and the power supply unit 108 are arranged with the sheet 116 and the base 118 interposed therebetween. According to this structure, the radiation detector 10, the control substrate 110, and the power supply unit 108 are arranged side by side in the horizontal direction in the figure (see Figures 47 to 51 ) compared to the conventional embodiment, the size of the radiation imaging device 1 when viewed from above can be reduced.

[0240] The disclosures of Japanese Applications No. 2018-051690, 2018-219696, 2019-022148, 2018-182730, and 2019-022149 are incorporated herein by reference in their entirety.

[0241] All documents, patent applications, and technical standards described in this specification are incorporated herein by reference to the same extent as if each individual document, patent application, or technical standard was specifically and individually indicated to be incorporated by reference.

Claims

1. A radiation detector comprising: A substrate having a plurality of pixels formed in a pixel region of a flexible base material for accumulating charges generated based on light converted from radiation; a conversion layer, provided on the surface of the substrate on which the pixel region is provided, and converting the radiation into light; and The first reinforcing substrate is provided on a surface of the conversion layer that is opposite to the surface on the substrate side, and comprises a material having a yield point and has a higher rigidity than the base material. A second strengthening substrate is provided on a surface of the first strengthening substrate opposite to the conversion layer. The second strengthening substrate is provided in a region straddling an end of the conversion layer and in a region not overlapping with a pixel region.

2. The radiation detector according to claim 1, wherein: The first strengthening substrate is provided in a region larger than a region where the conversion layer is provided.

3. The radiation detector according to claim 1 or 2, wherein: The substrate has a connection region connected to the other end of a flexible wiring connected to a circuit unit for reading out charges accumulated in the plurality of pixels in a region outside the surface where the plurality of pixels are formed. The first reinforcing substrate is provided in a region covering at least a portion of the connection region and the conversion layer.

4. The radiation detector according to claim 1, wherein: The substrate further includes a reinforcing member having higher rigidity than the base material on a surface facing the surface on which the plurality of pixels are formed.

5. The radiation detector according to claim 1, wherein: The invention further includes a buffer layer provided between the substrate and the conversion layer.

6. The radiation detector according to claim 1, wherein: The first reinforcing substrate has a bending modulus of elasticity of 1000 MPa or more and 2500 MPa or less.

7. The radiation detector according to claim 1, wherein: The material having a yield point is at least one of polycarbonate and polyethylene terephthalate.

8. The radiation detector according to claim 1, wherein: A ratio of a thermal expansion coefficient of the first reinforcing substrate to a thermal expansion coefficient of the conversion layer is 0.5 or more and 2 or less.

9. The radiation detector according to claim 1, wherein: The first reinforcing substrate has a thermal expansion coefficient of 30 ppm / K or more and 80 ppm / K or less.

10. The radiation detector according to claim 1, wherein: The conversion layer includes columnar crystals of CsI.

11. The radiation detector according to claim 1, wherein: The plurality of pixels are formed in the pixel region by a direct formation method.

12. The radiation detector according to claim 1, wherein: The first reinforcing substrate extends in regions corresponding to a central portion and a peripheral portion of the conversion layer.

13. The radiation detector according to claim 2 or 12, wherein: The first reinforcing substrate is bent so as to follow the inclination of the peripheral portion of the conversion layer.

14. The radiation detector according to claim 2, wherein: A space corresponding to the inclination of the peripheral portion of the conversion layer is formed between the first reinforcing substrate and the conversion layer.

15. The radiation detector according to claim 2, wherein: A filling material is filled in a space formed between the first reinforcing substrate and the conversion layer.

16. The radiation detector according to claim 2, wherein: The end portion of the first strengthening substrate is supported by a spacer.

17. The radiation detector according to claim 2, wherein: The first reinforcing substrate is bent along the inclination of the peripheral portion of the conversion layer. The end portion of the first strengthening substrate is sealed by a sealing member.

18. The radiation detector according to claim 1, wherein: A reinforcing member is provided on a surface of the substrate opposite to the conversion layer.

19. The radiation detector according to claim 1 or 18, wherein: A reinforcing member is further provided on a surface of the substrate opposite to the conversion layer, and the reinforcing member is provided in a region straddling an end portion of the conversion layer and in a region not overlapping with a pixel region.

20. A radiographic imaging device comprising: The radiation detector according to claim 1; a control unit that outputs a control signal for reading out the charges accumulated in the plurality of pixels; and The circuit unit is electrically connected to the radiation detector via a flexible wiring, and reads out charges from the plurality of pixels in accordance with the control signal.

21. A method for manufacturing a radiation detector, the method for manufacturing a radiation detector according to any one of claims 1 to 19, comprising: A step of applying an adhesive layer to a reinforcing substrate having a size corresponding to the radiation detector; A step of providing a flexible base material on a support body via a release layer, and forming a substrate having a plurality of pixels for accumulating charges generated by light converted from radiation in a pixel region of the base material; A step of forming a conversion layer for converting the radiation into light on the surface of the substrate where the pixel region is provided; A step of attaching a first reinforcing substrate made of a material having a yield point and having higher rigidity than the base material to a surface of the conversion layer opposite to the surface facing the substrate side; and and a step of peeling the substrate provided with the conversion layer and the first reinforcing substrate from the support.

22. The method for manufacturing a radiation detector according to claim 21, wherein: Before the step of attaching the first reinforcing substrate, the method further includes connecting one end of a flexible wiring connected to a circuit unit for reading out charges accumulated in the plurality of pixels to the substrate.

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