A transmission device for plasma gas

Abstract

The present invention relates to the technical field of gas transmission, and discloses a transmission device for plasma gas, comprising: a transmission pipeline, wherein the inlet end and the outlet end of the transmission pipeline are respectively connected to a first device and a second device, so as to transmit the plasma gas from the first device to the second device. A gas heating device, wherein the gas heating device is arranged inside the transmission pipeline, so as to heat the plasma gas flowing in the transmission pipeline. A control module, wherein the control module is arranged outside the transmission pipeline, and the control module is electrically connected to the gas heating device, so as to control the gas heating device. A power supply, wherein the power supply is electrically connected to the control module, so as to provide electrical energy to the control module. The present invention provides a transmission device for plasma gas, which can suppress the deposition of powder by plasma gas in the transmission pipeline, thereby extending the maintenance period of the transmission pipeline.

Description

Technical Field

[0001] The invention relates to the technical field of gas transmission, in particular to a transmission device for plasma gas. Background Art

[0002] Plasma gas is generally provided with energy by electrical energy or kinetic energy, so that the electrons outside the nucleus are separated from the constraints of the nucleus, thereby forming an ionized gas-like substance composed of positive and negative ions generated by the ionization of atoms and atomic groups after some electrons are deprived. Plasma gas is needed in the semiconductor etching industry. When the semiconductor etching industry uses plasma gas, the plasma gas needs to be transferred from the gas generator to the etching device. Because the plasma gas contains electrons, positive and negative ions and neutral particles. When the plasma gas is transmitted, when the temperature is low, the plasma gas is easy to deposit powder in the transmission device, thereby affecting the accuracy of the etching process and the performance of the transmission pipeline. Through research, it is found that heating the plasma gas to a certain temperature can prevent the plasma gas from being deposited on the inner wall of the transmission pipeline during the transmission process. If the plasma gas is heated from the outside of the transmission device, the heating effect is poor and energy is consumed. Research has found that setting the heating device inside the transmission pipeline and heating the plasma gas from the inside can make the plasma gas heat up quickly, facilitate operation and save energy. Summary of the invention

[0003] In order to overcome the defects in the prior art, an embodiment of the present invention provides a transmission device for plasma gas, which can suppress the powder deposition phenomenon of plasma gas in the transmission pipeline, thereby extending the maintenance period of the transmission pipeline.

[0004] The present invention discloses a transmission device for plasma gas, comprising:

[0005] A transmission pipeline, wherein an inlet end and an outlet end of the transmission pipeline are respectively connected to the first device and the second device, so as to transmit the plasma gas from the first device to the second device;

[0006] A gas heating device, the gas heating device is arranged inside the transmission pipeline to heat the plasma gas flowing in the transmission pipeline;

[0007] A control module, wherein the control module is disposed outside the transmission pipeline and is electrically connected to the gas heating device to control the gas heating device;

[0008] A power supply is electrically connected to the control module to provide electrical energy to the control module.

[0009] Preferably, the first device is a gas generating device, and the second device is a semiconductor etching device.

[0010] Preferably, the first device is provided with a first installation interface for installing the inlet end of the transmission pipeline; the second device is provided with a second installation interface for installing the outlet end of the transmission pipeline.

[0011] Preferably, the control module is a PID control module or a PD control module.

[0012] Further preferably, the control module is a PID control module.

[0013] Preferably, the control module is electrically connected to the first device.

[0014] Further preferably, the control module is electrically connected to a control device of the first equipment.

[0015] The beneficial effects of the present invention are as follows:

[0016] The transmission device for plasma gas of the present invention is provided with a gas heating device, which can heat the plasma gas flowing in the transmission pipeline to make the plasma gas reach a certain temperature, thereby inhibiting the plasma gas from powder deposition on the inner wall of the transmission pipeline, extending the maintenance period of the transmission pipeline, and making production operations more convenient.

[0017] The transmission device for plasma gas of the present invention arranges a gas heating device inside the transmission pipeline. The built-in gas heating device can directly act on the plasma gas flowing in the transmission pipeline, directly heat the plasma gas flowing in the transmission pipeline, and make the plasma gas quickly reach a certain temperature, thereby improving the heating speed of the heating device for the plasma gas and saving more energy than heating from the outside of the transmission pipeline.

[0018] In order to make the above and other purposes, features and advantages of the present invention more obvious and easy to understand, preferred embodiments are specifically cited below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0020] Figure 1 is a schematic structural diagram of a transmission device for plasma gas in an embodiment of the present invention;

[0021] The figure numbers of the above figures are: 1-first device; 2-second device; 3-transmission pipeline; 4-gas heating device; 5-control module; 6-power supply. DETAILED DESCRIPTION

[0022] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0023] This embodiment provides a transmission device for plasma gas, characterized in that it includes:

[0024] a transmission pipeline 3, wherein an inlet end and an outlet end of the transmission pipeline 3 are respectively connected to the first device 1 and the second device 2, so as to transmit the plasma gas from the first device 1 to the second device 2;

[0025] A gas heating device 4, wherein the gas heating device 4 is arranged inside the transmission pipeline 3 to heat the plasma gas flowing in the transmission pipeline 3;

[0026] A control module 5, wherein the control module 5 is disposed outside the transmission pipeline 3, and the control module 5 is electrically connected to the gas heating device 4 to control the gas heating device 4;

[0027] The power supply 6 is electrically connected to the control module 5 to provide electrical energy to the control module 5 .

[0028] refer to Figure 1, this embodiment provides a transmission device for plasma gas, which is used to transmit plasma gas between multiple devices. The transmission device includes a transmission pipeline 3. The transmission pipeline 3 includes an inlet end and an outlet end. A first installation interface is provided on the first device 1, so that the inlet end of the transmission pipeline 3 can be sealed and connected with the first installation interface so that the inlet end of the transmission pipeline 3 is connected with the output end of the first device 1. A second installation interface is provided on the second device 2, and the outlet end of the transmission pipeline 3 can be sealed and connected with the second installation interface, so that the outlet end of the transmission pipeline 3 is connected with the input end of the second device 2. Since the inlet end of the transmission pipeline 3 is connected with the output end of the first device 1, the outlet end of the transmission pipeline 3 is connected with the input end of the second device 2, so that the plasma gas is output from the first device 1, and then enters the transmission pipeline 3 from the inlet end of the transmission pipeline 3, and is transmitted to the second device 2 after passing through the outlet end of the transmission pipeline 3. The first device 1 is a gas generating device, and the second device 2 is a semiconductor etching device. Thus, the gas is ionized in the first device 1 to form plasma gas. The plasma gas generated in the first device 1 is transmitted to the second device 2 through the transmission pipeline 3. The second device 2 then uses the plasma gas to perform semiconductor etching operations.

[0029] Since plasma gas is an ionized gas, there are electrons, ions and neutral particles in the plasma gas. In the process of transmitting the plasma gas, the plasma gas will deposit a large amount of powder on the inner wall of the transmission pipe 3 and affect the use of the transmission pipe 3. By heating and heat-insulating the plasma gas, the powder deposition phenomenon can be well suppressed. Therefore, the present embodiment is provided with a gas heating device 4, which can heat the plasma gas flowing in the transmission pipe 3 to a certain temperature, thereby suppressing the powder deposition phenomenon of the plasma gas on the inner wall of the transmission pipe 3, extending the maintenance cycle of the transmission pipe 3, and making production operations more convenient.

[0030] In the process of heating the plasma gas, if the heating is performed from the outside of the transmission pipe 3, the heating device needs to transfer the heat to the transmission pipe 3, and then the transmission pipe 3 transfers the heat to the plasma gas inside. The method of heating the plasma gas from the outside of the transmission pipe 3 will cause the heat loss of the heating device to be fast, and the heating rate is low, the heating effect is poor, and it is very energy-consuming. Therefore, the transmission device for plasma gas in this embodiment is provided with a gas heating device 4 inside the transmission pipe 3. The built-in gas heating device 4 can directly act on the plasma gas flowing in the transmission pipe 3, directly heat the plasma gas flowing in the transmission pipe 3, so that the plasma gas quickly reaches a certain temperature, thereby improving the heating speed of the plasma gas by the heating device, and saving more energy than heating from the outside of the transmission pipe 3.

[0031] In this embodiment, a control module 5 is provided outside the transmission pipeline 3, and the control module 5 is electrically connected to the gas heating device 4, so that the control module 5 can control the operation of the gas heating device 4. In this embodiment, a power supply 6 is provided, and the power supply 6 is electrically connected to the control module 5, so that the power supply 6 can provide electric energy to the control module 5 to ensure the normal operation of the control module 5. The control module 5 includes a PD control module 5 and a PID control module 5. In this embodiment, the PD module is selected, and the selection method for the PD module is as follows: when the heating device starts to run, the control module 5 collects the internal temperature value, compares it with the preset temperature value to obtain the deviation e(K), and compares it with the preset threshold value β. When the deviation is greater than the threshold value β, the PD control module 5 is selected. When the deviation e(K) is less than the threshold value β, the temperature control needs to be more precise, and the PID control module 5 is selected at this time.

[0032] In this embodiment, a more accurate PID control module 5 is selected, and the PID control module 5 has more accurate control over the temperature. The PID control module 5 is electrically connected to the heating device and can control the heating device. In addition, the PID control module 5 is electrically connected to the control device of the first device 1, and the PID control module 5 can accurately sense the working state of the first device 1 and control the switch of the heating device. When plasma gas is transmitted, the PID control module 5 controls the heating device to start in time. When the gas transmission is completed, the PID control module 5 controls the heating device to turn off in time. Compared with the normally open mode of the heating device, the PID control module 5 senses and controls the switch of the heating device to save electric energy, avoid various problems such as device aging caused by long-term heating, and improve work efficiency.

[0033] The present invention uses specific embodiments to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. At the same time, for those skilled in the art, according to the idea of ​​the present invention, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present invention.

Claims

1. A plasma gas transmission device, characterized in that: include: A transmission pipeline, wherein an inlet end and an outlet end of the transmission pipeline are respectively connected to the first device and the second device, so as to transmit the plasma gas from the first device to the second device; A gas heating device, the gas heating device is arranged inside the transmission pipeline to heat the plasma gas flowing in the transmission pipeline; A control module, wherein the control module is disposed outside the transmission pipeline and is electrically connected to the gas heating device to control the gas heating device; A power supply, the power supply is electrically connected to the control module to provide electrical energy to the control module; The control module is a PID control module or a PD control module; The control module is electrically connected to the control device of the first device; Wherein, when the heating device starts to run, the control module collects the internal temperature value, compares it with the preset temperature value to obtain the deviation e, and compares it with the preset threshold value β. When the deviation is greater than the threshold value β, the PD control module is selected; When the deviation e is less than the threshold value β, the temperature needs to be controlled more accurately, and the PID control module is selected at this time; the PID control module is electrically connected to the control device of the first device, and the PID control module can accurately sense the working state of the first device and control the switch of the heating device; when plasma gas is transmitted, the PID control module controls the heating device to start in time; when the gas transmission ends, the PID control module controls the heating device to turn off in time.

2. The plasma gas transmission device according to claim 1, characterized in that: The first device is a gas generating device, and the second device is a semiconductor etching device.

3. The plasma gas transmission device according to claim 1, characterized in that: The first device is provided with a first installation interface for installing the inlet end of the transmission pipeline; the second device is provided with a second installation interface for installing the outlet end of the transmission pipeline.

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