A circuit and method for detecting high current shutdown capability of a power semiconductor device

Abstract

The present invention relates to a circuit and method for detecting the high-current shutdown capability of a power semiconductor device. The circuit comprises: a three-phase uncontrolled rectifier module, a converter module, an auxiliary converter device, a power semiconductor device under test, and a freewheeling absorption circuit; the positive terminal of the three-phase uncontrolled rectifier module is connected to the positive terminal of the front-stage input of the converter module, and the negative terminal of the three-phase uncontrolled rectifier module is connected to the negative terminal of the front-stage input of the converter module; the positive terminal of the rear-stage output of the converter module is respectively connected to the collector of the auxiliary converter device, the collector of the power semiconductor device under test, and the positive terminal of the freewheeling absorption circuit; and the negative terminal of the rear-stage output of the converter module is respectively connected to the emitter of the auxiliary converter device, the emitter of the power semiconductor device under test, and the negative terminal of the freewheeling absorption circuit. The detection circuit provided by the present invention improves the scalability and flexibility of the detection system, and the detection method ensures the accuracy of the detection results.

Description

Technical Field

[0001] The present invention belongs to the field of power semiconductor detection, and in particular relates to a circuit and method for detecting the high-current shutdown capability of a power semiconductor device. Background Art

[0002] With the vigorous development of power electronics technology and high-voltage direct current transmission technology, power semiconductor devices represented by IGBT have been widely used.

[0003] To evaluate the performance indicators of power semiconductor devices, basic dynamic and static parameter tests and general reliability tests can be performed on them. However, for power semiconductor devices used in DC circuit breaker conditions, the electrical stress they withstand under the special application conditions of DC circuit breakers is different from that in application scenarios such as rail transportation and industrial frequency conversion. Existing conventional test items such as dynamic and static parameter tests and general reliability tests cannot specifically evaluate the applicability and reliability of devices in actual application conditions.

[0004] In actual DC circuit breaker applications, power semiconductor devices must be turned on at zero voltage, with the current reaching the rated current at the moment of turn-on. This current then rises at a constant rate to 6-7 times the rated current before the device turns off. To better assess whether power semiconductor devices are suitable for the special operating conditions of DC circuit breakers and whether they can withstand and reliably shut off millisecond-level surge currents, it is necessary to provide a circuit and method for detecting the high-current shutdown capability of power semiconductor devices. Summary of the Invention

[0005] In response to the shortcomings of the existing technology, the purpose of the present invention is to provide a circuit and method for detecting the high-current shutdown capability of a power semiconductor device. The technical solution provided by the present invention uses a power electronic converter to construct a high-current shutdown capability detection system for a power semiconductor device that simulates the actual application conditions of a DC circuit breaker. The detection system can be flexibly configured and expanded according to the current level of the device under test, thereby generating a current waveform flowing through the two ends of the device under the actual application conditions of a DC circuit breaker, thereby assessing the DC circuit breaker application conditions of the device under test.

[0006] The purpose of the present invention is achieved by adopting the following technical solutions:

[0007] A power semiconductor device high current shutdown capability detection circuit, the improvement of which is that the circuit comprises: a three-phase uncontrolled rectifier module, a converter module, an auxiliary commutation device and a freewheeling absorption circuit;

[0008] The positive terminal of the three-phase uncontrolled rectifier module is connected to the front-stage input positive terminal of the converter module, and the negative terminal of the three-phase uncontrolled rectifier module is connected to the front-stage input negative terminal of the converter module;

[0009] The rear-stage output positive terminal of the converter module is respectively connected to the collector of the auxiliary converter device, the collector of the power semiconductor device under test and the positive terminal of the freewheeling absorption circuit; the rear-stage output negative terminal of the converter module is respectively connected to the emitter of the auxiliary converter device, the emitter of the power semiconductor device under test and the negative terminal of the freewheeling absorption circuit;

[0010] The rated current of the converter module is determined according to the rated current of the power semiconductor device under test.

[0011] Preferably, the converter module comprises: a front-stage input positive terminal of the converter module, a front-stage input negative terminal of the converter module, a rear-stage output positive terminal of the converter module, a rear-stage output negative terminal of the converter module and a plurality of current source converters;

[0012] The front-stage input positive terminal of each current source converter is connected to the front-stage input positive terminal of the converter module, the front-stage input negative terminal of each current source converter is connected to the front-stage input negative terminal of the converter module, the rear-stage output positive terminal of each current source converter is connected to the rear-stage output positive terminal of the converter module, and the rear-stage output negative terminal of each current source converter is connected to the rear-stage output negative terminal of the converter module.

[0013] Furthermore, the current source converter includes: a front-stage input positive terminal of the current source converter, a front-stage input negative terminal of the current source converter, a rear-stage output positive terminal of the current source converter, a rear-stage output negative terminal of the current source converter, a first IGBT module, a second IGBT module, a first capacitor and an inductor;

[0014] The front-stage input positive terminal of the current source converter is connected to the collector of the first IGBT module, the emitter of the first IGBT module is connected to one end of the inductor, and the other end of the inductor is connected to the rear-stage output positive terminal of the current source converter;

[0015] The front-stage input negative terminal of the current source type converter is connected to the rear-stage output negative terminal of the current source type converter;

[0016] The connection point between the front-stage input negative terminal of the current source converter and the rear-stage output negative terminal of the current source converter is connected to the emitter of the second IGBT module, and the collector of the second IGBT module is connected to the emitter of the first IGBT module;

[0017] The first capacitor is connected between the positive terminal of the front-stage input of the current source converter and the negative terminal of the front-stage input of the current source converter;

[0018] Wherein, the first IGBT module and the second IGBT module are both composed of IGBTs and diodes connected in anti-parallel.

[0019] Preferably, the auxiliary commutation device is composed of an IGBT and a diode connected in anti-parallel.

[0020] Preferably, the rated current of the converter module is not less than 6 times the rated current of the power semiconductor device under test, and the rated current of the converter module is adjusted by the number of current source converters connected in parallel in the converter module.

[0021] Preferably, the current level of the auxiliary commutation device is the same as the current level of the power semiconductor device under test.

[0022] Preferably, the freewheeling absorption circuit includes a positive terminal of the freewheeling absorption circuit, a negative terminal of the freewheeling absorption circuit, a diode, a second capacitor and a resistor;

[0023] The positive terminal of the freewheeling absorption circuit is connected to the positive electrode of the diode, the negative electrode of the diode is connected to one end of the second capacitor, and the other end of the second capacitor is connected to the negative terminal of the freewheeling absorption circuit;

[0024] The cathode of the diode is connected to one end of the resistor, and the other end of the resistor is connected to the negative terminal of the freewheeling absorption circuit.

[0025] A detection method based on the power semiconductor device high current shutdown capability detection circuit is improved in that the method comprises:

[0026] Turning on each current source converter and the auxiliary commutation device in the converter module;

[0027] If the current value of the on-state current of the auxiliary commutation device remains unchanged, turning off the auxiliary commutation device and turning on the power semiconductor device under test;

[0028] If the conduction time of the power semiconductor device under test reaches a preset working time, shutting down each current source converter in the converter module and the power semiconductor device under test;

[0029] If the on-current of the power semiconductor device under test decreases to zero within the preset off-time, the large-current shutoff capability of the power semiconductor device under test meets the standard.

[0030] Compared with the closest prior art, the present invention has the following beneficial effects:

[0031] The rated current of the converter module in the detection circuit provided by the present invention can be dynamically adjusted, thereby improving the scalability and flexibility of the detection system.

[0032] The detection circuit provided by the present invention introduces an auxiliary commutation device, which is connected in parallel with the power semiconductor device under test to eliminate the overshoot component and the slow rise process when the current source is started, thereby obtaining a test current on the power semiconductor device under test that is closer to the actual application conditions.

[0033] In the detection method provided by the present invention, the triggering and conducting timing between the current source converter, the auxiliary commutation device and the power semiconductor device to be tested is clear and distinct, and the detection is performed according to the triggering and conducting timing to ensure the accuracy of the detection result. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 This is a circuit diagram of a large current shutoff capability detection circuit for a power semiconductor device according to an embodiment of the present invention;

[0035] Figure 2 This is a flow chart of a method for detecting the high current shutoff capability of a power semiconductor device according to an embodiment of the present invention;

[0036] Figure 3 3 is a waveform diagram of the on-state current of the auxiliary commutation device and the power semiconductor device under test in an embodiment of the present invention. DETAILED DESCRIPTION

[0037] The specific embodiments of the present invention will be further described in detail below with reference to the accompanying drawings.

[0038] To make the objectives, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts shall fall within the scope of protection of the present invention.

[0039] This embodiment provides a circuit for detecting the large current shutoff capability of a power semiconductor device. Figure 1 As shown, the circuit includes: a three-phase uncontrolled rectifier module, a converter module, an auxiliary commutation device and a freewheeling absorption circuit;

[0040] The positive terminal of the three-phase uncontrolled rectifier module is connected to the front-stage input positive terminal of the converter module, and the negative terminal of the three-phase uncontrolled rectifier module is connected to the front-stage input negative terminal of the converter module;

[0041] The rear-stage output positive terminal of the converter module is respectively connected to the collector of the auxiliary converter device, the collector of the power semiconductor device under test and the positive terminal of the freewheeling absorption circuit; the rear-stage output negative terminal of the converter module is respectively connected to the emitter of the auxiliary converter device, the emitter of the power semiconductor device under test and the negative terminal of the freewheeling absorption circuit;

[0042] The rated current of the converter module is determined according to the rated current of the power semiconductor device under test.

[0043] Furthermore, the converter module includes: a front-stage input positive terminal of the converter module, a front-stage input negative terminal of the converter module, a rear-stage output positive terminal of the converter module, a rear-stage output negative terminal of the converter module, and a plurality of current source converters;

[0044] The front-stage input positive terminal of each current source converter is connected to the front-stage input positive terminal of the converter module, the front-stage input negative terminal of each current source converter is connected to the front-stage input negative terminal of the converter module, the rear-stage output positive terminal of each current source converter is connected to the rear-stage output positive terminal of the converter module, and the rear-stage output negative terminal of each current source converter is connected to the rear-stage output negative terminal of the converter module.

[0045] Specifically, the current source converter includes: a front-stage input positive terminal of the current source converter, a front-stage input negative terminal of the current source converter, a rear-stage output positive terminal of the current source converter, a rear-stage output negative terminal of the current source converter, a first IGBT module, a second IGBT module, a first capacitor, and an inductor;

[0046] The front-stage input positive terminal of the current source converter is connected to the collector of the first IGBT module, the emitter of the first IGBT module is connected to one end of the inductor, and the other end of the inductor is connected to the rear-stage output positive terminal of the current source converter;

[0047] The front-stage input negative terminal of the current source type converter is connected to the rear-stage output negative terminal of the current source type converter;

[0048] The connection point between the front-stage input negative terminal of the current source converter and the rear-stage output negative terminal of the current source converter is connected to the emitter of the second IGBT module, and the collector of the second IGBT module is connected to the emitter of the first IGBT module;

[0049] The first capacitor is connected between the positive terminal of the front-stage input of the current source converter and the negative terminal of the front-stage input of the current source converter;

[0050] Wherein, the first IGBT module and the second IGBT module are both composed of IGBTs and diodes connected in anti-parallel.

[0051] Furthermore, the auxiliary commutation device is composed of an IGBT and a diode connected in anti-parallel.

[0052] Furthermore, the rated current of the converter module is not less than 6 times the rated current of the power semiconductor device under test, and the rated current of the converter module is adjusted by the number of parallel connections of the current source converters in the converter module; the current level of the auxiliary converter device is the same as the current level of the power semiconductor device under test.

[0053] Specifically, the freewheeling absorption circuit includes a positive terminal of the freewheeling absorption circuit, a negative terminal of the freewheeling absorption circuit, a diode, a second capacitor and a resistor;

[0054] The positive terminal of the freewheeling absorption circuit is connected to the positive electrode of the diode, the negative electrode of the diode is connected to one end of the second capacitor, and the other end of the second capacitor is connected to the negative terminal of the freewheeling absorption circuit;

[0055] The cathode of the diode is connected to one end of the resistor, and the other end of the resistor is connected to the negative terminal of the freewheeling absorption circuit.

[0056] This embodiment also provides a detection method based on the power semiconductor device large current shutdown capability detection circuit, such as Figure 2 As shown, the method includes:

[0057] Step 1. Turning on each current source converter and the auxiliary converter device in the converter module;

[0058] Step 2. Collect the on-state current of the auxiliary commutation device. If the on-state current value of the auxiliary commutation device remains unchanged, turn off the auxiliary commutation device and turn on the power semiconductor device under test, and go to step 3; otherwise, do nothing.

[0059] Step 3. If the conduction time of the power semiconductor device under test reaches the preset operating time, shut down each current source converter in the converter module and the power semiconductor device under test, and go to step 4; otherwise, do nothing;

[0060] The waveform of the conduction current of the auxiliary commutation device and the power semiconductor device under test is as follows: Figure 3 As shown;

[0061] Step 4. Collect the on-current of the power semiconductor device under test. If the on-current of the power semiconductor device under test decreases to zero within the preset off-time, the large-current shutoff capability of the power semiconductor device under test meets the standard; otherwise, the large-current shutoff capability of the power semiconductor device under test does not meet the standard.

[0062] Those skilled in the art will appreciate that the embodiments of the present application can be provided as methods, systems, or computer program products. Therefore, the present application can adopt the form of a complete hardware embodiment, a complete software embodiment, or an embodiment in combination with software and hardware. Moreover, the present application can adopt the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to magnetic disk storage, CD-ROM, optical storage, etc.) that contain computer-usable program code.

[0063] The present application is described with reference to the flowcharts and / or block diagrams of the methods, devices (systems), and computer program products according to the embodiments of the present application. It should be understood that each process and / or box in the flowchart and / or block diagram, as well as the combination of the processes and / or boxes in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the steps in the process. Figure 1 a process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0064] These computer program instructions may also be stored in a computer readable memory that can direct a computer or other programmable data processing device to work in a specific manner, so that the instructions stored in the computer readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 a process or multiple processes and / or boxes Figure 1 The function specified in one or more boxes.

[0065] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operational steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing the instructions executed on the computer or other programmable device for implementing the process. Figure 1 a process or multiple processes and / or boxes Figure 1 The steps for the function specified in one or more boxes.

[0066] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and not to limit it. Although the present invention has been described in detail with reference to the above embodiments, ordinary technicians in the field should understand that the specific implementation methods of the present invention can still be modified or replaced by equivalents. Any modification or equivalent replacement that does not depart from the spirit and scope of the present invention should be covered by the scope of protection of the claims of the present invention.

Claims

1. A circuit for detecting the high current shutoff capability of a power semiconductor device, characterized in that: The circuit includes: a three-phase uncontrolled rectifier module, a converter module, an auxiliary commutation device and a freewheeling absorption circuit; The positive terminal of the three-phase uncontrolled rectifier module is connected to the front-stage input positive terminal of the converter module, and the negative terminal of the three-phase uncontrolled rectifier module is connected to the front-stage input negative terminal of the converter module; The rear-stage output positive terminal of the converter module is respectively connected to the collector of the auxiliary converter device, the collector of the power semiconductor device under test and the positive terminal of the freewheeling absorption circuit; the rear-stage output negative terminal of the converter module is respectively connected to the emitter of the auxiliary converter device, the emitter of the power semiconductor device under test and the negative terminal of the freewheeling absorption circuit; The rated current of the converter module is determined according to the rated current of the power semiconductor device under test; The converter module includes: a front-stage input positive terminal of the converter module, a front-stage input negative terminal of the converter module, a rear-stage output positive terminal of the converter module, a rear-stage output negative terminal of the converter module and a plurality of current source converters; The front-stage input positive terminal of each current source type converter is connected to the front-stage input positive terminal of the converter module, the front-stage input negative terminal of each current source type converter is connected to the front-stage input negative terminal of the converter module, the rear-stage output positive terminal of each current source type converter is connected to the rear-stage output positive terminal of the converter module, and the rear-stage output negative terminal of each current source type converter is connected to the rear-stage output negative terminal of the converter module; The current source converter comprises: a front-stage input positive terminal of the current source converter, a front-stage input negative terminal of the current source converter, a rear-stage output positive terminal of the current source converter, a rear-stage output negative terminal of the current source converter, a first IGBT module, a second IGBT module, a first capacitor and an inductor; The front-stage input positive terminal of the current source converter is connected to the collector of the first IGBT module, the emitter of the first IGBT module is connected to one end of the inductor, and the other end of the inductor is connected to the rear-stage output positive terminal of the current source converter; The front-stage input negative terminal of the current source type converter is connected to the rear-stage output negative terminal of the current source type converter; The connection point between the front-stage input negative terminal of the current source converter and the rear-stage output negative terminal of the current source converter is connected to the emitter of the second IGBT module, and the collector of the second IGBT module is connected to the emitter of the first IGBT module; The first capacitor is connected between the positive terminal of the front-stage input of the current source converter and the negative terminal of the front-stage input of the current source converter; Wherein, the first IGBT module and the second IGBT module are both composed of an IGBT and a diode connected in anti-parallel; The rated current of the converter module is adjusted by the number of current source converters connected in parallel in the converter module.

2. The circuit according to claim 1, wherein The auxiliary commutation device is composed of an IGBT and a diode connected in anti-parallel.

3. The circuit according to claim 1, wherein The rated current of the converter module is not less than 6 times the rated current of the power semiconductor device under test.

4. The circuit according to claim 1, wherein The current level of the auxiliary commutation device is the same as the current level of the power semiconductor device under test.

5. The circuit according to claim 1, wherein The freewheeling absorption circuit includes a positive terminal of the freewheeling absorption circuit, a negative terminal of the freewheeling absorption circuit, a diode, a second capacitor and a resistor; The positive terminal of the freewheeling absorption circuit is connected to the positive electrode of the diode, the negative electrode of the diode is connected to one end of the second capacitor, and the other end of the second capacitor is connected to the negative terminal of the freewheeling absorption circuit; The cathode of the diode is connected to one end of the resistor, and the other end of the resistor is connected to the negative terminal of the freewheeling absorption circuit.

6. A detection method for a power semiconductor device high current shutoff capability detection circuit according to any one of claims 1 to 5, characterized in that: The method comprises: Turning on each current source converter and the auxiliary commutation device in the converter module; If the current value of the on-state current of the auxiliary commutation device remains unchanged, turning off the auxiliary commutation device and turning on the power semiconductor device under test; If the conduction time of the power semiconductor device under test reaches a preset working time, shutting down each current source converter in the converter module and the power semiconductor device under test; If the on-current of the power semiconductor device under test decreases to zero within the preset off-time, the large-current shutoff capability of the power semiconductor device under test meets the standard.

Images